Image not available
Illustrative purposes only
AP0803GMT-HF-3TR
Power MOSFET, N Channel, 30 V, 50 A, 0.0085 ohm, PMPAK, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ADVANCED POWER ELECTRONICS CORP
- Product type: Single MOSFETs
- No. of Pins: 8Pins
- Channel Type: N Channel
- Power Dissipation: 29.7W
- Transistor Mounting: Surface Mount
- Transistor Polarity: N Channel
- Power Dissipation Pd: 29.7W
- Rds(on) Test Voltage: 10V
- On Resistance Rds(on): 0.0085ohm
- Transistor Case Style: PMPAK
- Drain Source Voltage Vds: 30V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: 50A
- Drain Source On State Resistance: 0.0085ohm
- Gate Source Threshold Voltage Max: 1V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.247 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Advanced Power Electronics Cor . p**
**AP0803GMT-HF-3**
## **N-channel Enhancement-mode Power MOSFET**
## **Simple Drive Requirement**
**==> picture [457 x 205] intentionally omitted <==**
**----- Start of picture text -----**<br>
D<br>SO-8 Compatible with Heatsink BV 30VDSS<br>Low On-resistance R 8.5mΩ<br>DS(ON)<br>G<br>RoHS-compliant, halogen-free I 50AD<br>@ S (_<br>D<br>D<br>Description<br>D<br>D<br>Advanced Power MOSFETs from APEC provide the designer with<br>the best combination of fast switching, ruggedized device design,<br>low on-resistance and cost-effectiveness.<br>The PMPAK [[®]] 5x6 package is specially designed for DC-DC converter S<br>applications, with a foot print that is compatible with the popular SO-8<br>i<br>and offers a backside heat sink and lower package profile. SS G<br>PMPAK [®] 5x6<br>**----- End of picture text -----**<br>
**SO-8 Compatible with Heatsink Low On-resistance RoHS-compliant, halogen-free**
## **Description**
The PMPAK[[®]] 5x6 package is specially designed for DC-DC converter applications, with a foot print that is compatible with the popular SO-8 and offers a backside heat sink and lower package profile.
## **Absolute Maximum Ratings**
|Symbol|Parameter|Rating|Units|
|---|---|---|---|
|VDS|Drain-Source Voltage|30 V|30 V|
|VGS|Gate-Source Voltage ±20 V|e ±20 V|e ±20 V|
|IDat TC=25°C|Continuous Drain Current(Chip)|50 A|50 A|
|IDat TA=25°C|Continuous Drain Current3|19 A|19 A|
|IDat TA=70°C|Continuous Drain Current3|15 A|15 A|
|IDM|Pulsed Drain Current1|160 A|160 A|
|PDat TC=25°C|Total Power Dissipation 29.7 W|ation 29.7 W|ation 29.7 W|
|PDat TA=25°C|Total Power Dissipation|5 W|5 W|
|EAS|Single Pulse Avalanche Energy4|16.2 mJ|16.2 mJ|
|TSTG|Storage Temperature Range|-55 to 150 °C|-55 to 150 °C|
|TJ<br>~~ee~~|OperatingJunction Temperature Range<br>~~ee~~|-55 to 150 °C<br>~~ee~~|-55 to 150 °C<br>~~ee~~|
## **Thermal Data**
|Symbol|Parameter|Value|Units|
|---|---|---|---|
|Rthj-c|Maximum Thermal Resistance,Junction-case|4.2|°C/W|
|Rthj-a|Maximum Thermal Resistance,Junction-ambient3|25|°C/W|
## **Ordering Information**
**AP0803GMT-HF-3TR RoHS-compliant halogen-free PMPAK[®] 5x6, shipped on tape**
**and reel (3000pcs/reel)**
PMPAK[®] is a registered trademark of Advanced Power Electronics Corp.
**200809256-3 1/5**
**©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Corp. AP0803GMT-HF-3 Electrical Specifications at Tj=25°C (unless otherwise specified)** Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 30 - - V RDS(ON) Static Drain-Source On-Resistance[2] VGS=10V, ID=30A - - 8.5 mΩ VGS =4.5V, ID=20A - - 13 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 - 3 V gfs Forward Transconductance VDS=10V, ID=20A - 20 - S IDSS Drain-Source Leakage Current VDS=30V, VGS=0V - - 1 uA IGSS Gate-Source Leakage VGS=±20V - - ±100 nA Qg Total Gate Charge[2 ] ID=30A - 5.1 8 nC Qgs Gate-Source Charge VDS=15V - 1.5 - nC ~~=~~ Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 3.1 - nC td(on) Turn-on Delay Time[2 ] VDS=15V - 7 - ns tr Rise Time ID=30A - 80 - ns td(off) Turn-off Delay Time RG=3.3Ω , VGS=10V - 15 - ns tf Fall Time RD=0.5Ω - 4 - ns Ciss Input Capacitance VGS=0V - 500 800 pF Coss Output Capacitance VDS=25V - 180 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 75 - pF R Gate Resistance f=1.0MHz - 2.8 4.2 Ω ~~=~~ g **Source-Drain Diode** Symbol Parameter Test Conditions Min. Typ. Max. Units VSD Forward On Voltage[2 ] IS=20A, VGS=0V - - 1.3 V trr Reverse Recovery Time[2 ] IS=10A, VGS=0V, - 23 - ns ~~=~~ Qrr Reverse Recovery Charge dI/dt=100A/µs - 15 - nC **Notes:**
## 1.Pulse width limited by maximum junction temperature
## 2.Pulse test
3.Surface mounted on 1 in[2] copper pad of FR4 board, t <10sec, 60°C/W at steady state.
4.Starting Tj=25[o] C, VDD=25V, L=0.1mH, RG=25Ω , IAS=18A.
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN.
**2/5**
**©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP0803GMT-HF-3**
## **Typical Electrical Characteristics**
**==> picture [434 x 636] intentionally omitted <==**
**----- Start of picture text -----**<br>
160 100<br>T C =25 [o] C 10V T C =150 [o] C 10V<br>7.0V 7.0V<br>6.0V 80 6.0V<br>120 5.0V<br>err By an<br>60<br>5.0V<br>80 V G =4.0V<br>40<br>V G = 4.0 V Faas<br>- eet<br>40<br>0 200 PooAPEEtt<br>0.0 1.0 2.0 3.0 4.0 5.0 0.0 1.0 2.0 3.0 4.0 5.0 6.0<br>V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)<br> Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics<br>36 2.0<br>I D =20A I D =30A<br>T C =25 [o] C V G =10V<br>28 1.6<br>20 1.2<br>12 iE 0.8 Ese<br>4 0.4<br>2 4 6 8 10 -50 0 50 100 150<br>PerPretssy 9 ebep =<br>V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( [o] C)<br> Fig 3. On-Resistance vs. Gate Voltage Fig 4. Normalized On-Resistance<br>vs. Junction Temperature<br>30 1.6<br>T j =150 [o] C T j =25 [o] C<br>1.2<br>ce<br>20<br>0.8<br>Hite edi<br>10<br>0.4<br>HEA<br>0 0.0<br>0 0.4 0.8 1.2 1.6 -50 0 50 100 150<br>V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( [o] C)<br> , Drain Current (A) , Drain Current (A)<br>ID ID<br>) DS(ON)<br>Ω<br> (m<br>DS(ON)<br>R Normalized R<br> (V)<br>GS(th)<br>(A)IS<br>Normalized V<br>**----- End of picture text -----**<br>
**==> picture [189 x 24] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 5. Forward Characteristic of<br> Reverse Diode<br>**----- End of picture text -----**<br>
**==> picture [190 x 26] intentionally omitted <==**
**----- Start of picture text -----**<br>
Fig 6. Gate Threshold Voltage vs.<br> Junction Temperature<br>**----- End of picture text -----**<br>
**3/5**
**©2009 Advanced Power Electronics Corp. USA**
**www.a-powerusa.com**
**Advanced Power Electronics Cor . p**
**AP0803GMT-HF-3**
## **Typical Electrical Characteristics (cont.)**
**==> picture [185 x 178] intentionally omitted <==**
**----- Start of picture text -----**<br>
12<br> I D =30A<br>10<br>Y<br>ff V DS =15V |<br>V DS =18V<br>8 conf V DS =24V<br>6<br>ff |<br>4<br>2 |oAff |<br>0<br>0 AGREE 2 4 6 8 10 12<br>Q G , Total Gate Charge (nC)<br> , Gate to Source Voltage (V)<br>GS<br>V<br>**----- End of picture text -----**<br>
**==> picture [190 x 180] intentionally omitted <==**
**----- Start of picture text -----**<br>
600 f=1.0MHz<br>500<br>ei eEREER Eeeee C iss<br>400 E ERE RennneceeeeeeeennneeE<br>300<br>Se HE HE a<br>200<br>fava [fisneeee] C oss<br>1000 PEPFett eta EHIGATL C rss<br>1 BER 5 RE 9 M E 13 ESRHETT 17 Et 21 25 29<br>V DS ,Drain-to-Source Voltage (V)<br>C (pF)<br>**----- End of picture text -----**<br>
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
**==> picture [188 x 172] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000<br>SII IDSA DOSS ATSC ITTODUP OTe aTedg<br>Pie arog a lalatonpocc aca ny<br>100<br>100us<br>10<br>a = = ! a OS<S - — _ =<br>ieee ee:SEESEGGEH= ee ee ee De Od 2225 SAN ee=I-iI4IIS 1ms 144<br>10ms<br>1 NR 100ms<br>SSE SSS SSS SSeS Tet eeae<br> T C =25 [o] C DC<br>Single Pulse<br>0<br>0.1 1 10 100<br>V DS ,Drain-to-Source Voltage (V)<br>(A)<br>ID<br>**----- End of picture text -----**<br>
**==> picture [185 x 171] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>Fyee Duty factor = 0.5 eA——_<br>0.2<br>0.1<br>0.1<br>me’ A<br>Et 0.05 oe<br>Sn 7/ali PDM<br>M274 Se t<br>eit 0.02 UL T<br>Pa Duty factor = t/T <><br>0.01 Peak Tj = PDM x Rthjc + Tc<br>Single Pulse<br>0.01<br>0.00001 0.0001 0.001 0.01 0.1 1<br>t , Pulse Width (s)<br>)thjc<br>Normalized Thermal Response (R<br>**----- End of picture text -----**<br>
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
**==> picture [133 x 130] intentionally omitted <==**
**----- Start of picture text -----**<br>
VDS<br>10%90% hv<br>VGS<br>td(on) tr td(off) tf<br>**----- End of picture text -----**<br>
**==> picture [151 x 134] intentionally omitted <==**
**----- Start of picture text -----**<br>
VG<br>QG<br>4.5V<br>QGS Q GD<br>Charge Q<br>**----- End of picture text -----**<br>
Fig 11. Switching Time Waveforms Fig 12. Gate Charge Waveform
**4/5**
**©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com**
**AP0803GMT-HF-3**
## **Advanced Power Electronics Cor . p**
## **Package Dimensions: PMPAK[®] 5x6**
**==> picture [187 x 248] intentionally omitted <==**
**----- Start of picture text -----**<br>
Cd Millimeters<br>SYMBOLS<br>MIN NOM MAX<br>A 0.90 1.00 1.10<br>ee<br>b 0.33 0.41 0.51<br>C 0.20 - -<br>——-—}-- + —<br>D1 4.80 4.90 5.10<br>ee<br>D2 - - 4.20<br>ee ee ee ee<br>E 5.90 6.00 6.10<br>E1 (Reference) 5.70 5.75 5.80<br>ee<br>E2 (Reference) 3.38 3.58 3.78<br>e e es 1.27 BSC<br>H - - 0.62<br>ee K (Reference) 0.70 - -<br>L 0.51 0.61 0.71<br>e ee<br>L1 - - 0.20<br>es α (Reference) 0° - 12°<br>**----- End of picture text -----**<br>
1. All dimensions are in millimeters.
## **Marking Information:**
2. Dimensions do not include mold protrusions.
**==> picture [411 x 102] intentionally omitted <==**
**----- Start of picture text -----**<br>
Product: AP0803<br>Package code<br>0803GMT<br>GMT = RoHS-compliant halogen-free PMPAK [®] 5x6<br>YWWSSS<br>Date Code (YWWSSS)<br> Y: Last Digit Of The Year<br> WW: Work week<br> SSS: Lot code sequence<br>**----- End of picture text -----**<br>
**5/5**
**©2009 Advanced Power Electronics Corp. USA www.a-powerusa.com**
Updated at February 9, 2023
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →