ALF08NP16V5

Dual MOSFET, Complementary N and P Channel, 160 V, 160 V, 8 A, 8 A

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Manufacturer: TT ELECTRONICS / SEMELAB
Product type: Dual MOSFETs
Transistor Polarity:N and P Channel; Continuous Drain Current Id:8A; Drain Source Voltage Vds:160V; On Resistance Rds(on):-; Rds(on) Test Voltage Vgs:-; Threshold Voltage Vgs:-; Power
No. of Pins: 5Pins
Channel Type: Complementary N and P Channel
Product Range: -
Qualification: -
Transistor Case Style: TO-247
Operating Temperature Max: 150°C
Power Dissipation N Channel: -
Power Dissipation P Channel: -
Drain Source Voltage Vds N Channel: 160V
Drain Source Voltage Vds P Channel: 160V
Continuous Drain Current Id N Channel: 8A
Continuous Drain Current Id P Channel: 8A
Drain Source On State Resistance N Channel: -
Drain Source On State Resistance P Channel: -

Delivery and price
Units per pack	2000
Price	5.49 €
Current stock	10+
Lead time	30 days

Datasheet

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(Tc = 25 ° C unless otherwise stated) 

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–  Source Voltage ± 160V ± 200V<br>– Source Voltage ± 20V<br>Drain Current ± 8A<br>Drain Diode Current ± 8A<br>Power Dissipation Tcase= 25 ° C TBC<br>Temperature 150 ° C<br>Temperature Range -55 to +150 ° C<br>°<br>Resistance, Junction To Case | tBc | cw<br>**----- End of picture text -----**<br>


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* Pulse Test: Pulse Width = 300 μ s, Duty Cycle ≤ 

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Typical Output Characteristics<br>12<br>Pch = 125W<br>10 VGS = 8V<br>VGS = 7V<br>8 VGS = 6V<br>6 fy(7===aes VGS = 5V<br>VGS = 4V<br>4<br>: VGS = 3V<br>2 ;- asa<br>VGS = 2V<br>VGS = 1V<br>ppSS<br>0<br>0 20 40 60 80<br>VDS  (V)<br>Transfer Characteristic<br>12<br>-25°C<br>10<br>25°C<br>8 UZ +75°C<br>6 /)JEEZ<br>/<br>4<br>2<br>0<br>rat<br>0 5 10 15<br>Gate - Source Voltage (V)<br>Drain - Source Voltage<br>vs Gate - Source Voltage<br>18<br>16<br>14<br>|<br>12<br>|<br>10<br>I<br>8<br>6 1 ID = 6A<br>4<br>ID = 3A<br>2<br>ID = 1A<br>0<br>0 2 4 6 8 10<br>Gate - Source Voltage  (V)<br>Drain Current (A)<br>Drain current (A)<br>Drain - Source Voltage  (V)<br>**----- End of picture text -----**<br>


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Typical Output Characteristics<br>**----- End of picture text -----**<br>


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9<br>8 Vgs = 8V<br>Vgs = 7V<br>7<br>Vgs = 6V<br>6<br>Vgs = 5V<br>5<br>ZZ<br>ZEEE Vgs = 4V<br>4<br>3<br>Vgs = 3V<br>2 ) zum<br>J<br>Vgs = 2V<br>1<br>Laas Vgs = 1V<br>0 Jga<br>0 5 10 15<br>VDS (V)<br>Transfer Characteristic<br>+25°C<br>0.300<br>0.250<br>0.200 of<br>*yOy<br>0.150 ibry Ao) | | | |<br>0.100<br>0.050 Y\ | | | | Lit<br>4<br>0.000<br>0 0.5 1 | 1.5<br>Gate - Source Voltage  (V)<br>Transconductance<br>10<br>VDS = 20V<br>1<br>0<br>0 2 4 6 8 10<br>ID Drain Current (A)<br>Drain Current (A)<br>Drain Current  (A)<br>Transconductance  (s)<br>**----- End of picture text -----**<br>


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Safe Operating Area Typical Capacitance  VDS = 10<br>vs Gate Source Voltage f = 1 Mhz<br>800<br>10 _>SSS=S==SS: YT | | Jf ff<br>700<br>CISS<br>600<br>% ti<br>1 500<br>400<br>wy,<br>COSS<br>300<br>0.1<br>200<br>100<br>CRSS<br>= S)NorRe ’ 0 a<br>0.01<br>0 5 10<br>1 10 100 1000<br>Drain - Source Voltage (V) Gate Source Voltage (-VGS V)<br>Drain Current  (A) 160V 200V Typical Capacitance  (pF)<br>**----- End of picture text -----**<br>


## Typical Output Characteristics 

## Typical Output Characteristics 

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12<br>8<br>10 Pch = 125W 7 Vgs = 8V<br>\ 6 Vgs = 7V<br>8 Vgs = 8V<br>\a Vgs = 7V 5 - Vgs = 6V<br>6 Vgs = 6V 4<br>Vgs = 5V<br>4 SREESSSeee Vgs = 5V 3 fe<br>Vgs = 4V 2 Vgs = 4V<br>2 Vgs = 3V Vgs = 3V<br>Vgs = 2V 1<br>0 V gs = 1V 0 ae Vgs = 2VVgs = 1V<br>0 20 40 60 80<br>0 5 10 15<br>VDS (V) Drain Source Voltage (V)<br>Transfer Characteristic  Transfer Characteristic<br>+25°C<br>12 0.30<br>10 -25°C 0.25 //<br>+25°C<br>8 0.20<br>+75°C<br>6 KE 0.15 /<br>Ve /<br>4 0.10<br>2 0.05<br>Yi J<br>f /; WA/<br>0 0.00<br>0 5 10 15 0 0.5 1 1.5 2<br>Gate - Source Voltage (V) Gate- Source Voltage (V)<br>Drain - Source Voltage  Transconductance<br>vs  Gate - Source Voltage<br>16 10<br>14<br>||<br>12<br>{|<br>10<br>8 1<br>ID = 6A VDS = -20V<br>6<br>4<br>ID = 3A<br>2<br>i ID = 1A<br>0 SS 0<br>0 2 4 6 8 10 0 2 4 6 8<br>Gate - Source Voltage (V) ID Drain Current  (A)<br>Drain Current (A)<br>Drain Current Id (A)<br>Drain Current  (A) Drain Current (A)<br>Transconductance (s)<br>Drain- Source Voltage (V)<br>**----- End of picture text -----**<br>


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Typical Capacitance<br>Safe Operating Area Vps=10<br>vs Gate -Source Voltage f=1 Mhz<br>10 1400<br>1200 CISS<br>Sy62, ee ee ee ee ee ee ee<br>1000<br>1 ~~ a<br>800<br>600<br>Xsq es<br>0.1 COSS<br>400<br>200<br>CRSS<br>0.01 0<br>1 10 100 1000 0 5 10<br>Drain - Voltage (V) -Gate -Source Voltage (V)<br>Drain Current (A) Cpacitance (pF)<br>160V 200V<br>**----- End of picture text -----**<br>


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0.140 – 0.143 0.185 – 0.208<br>(3.56 – 3.63) (4.70 – 5.28)<br>DIA TYP 0.620 – 0.640<br>(15.75 – 16.26) 0.180 – 0.200<br>(4.57 – 5.08)<br>0.2 42 BSC<br>(6.1 5 BSC)<br>0.819 – 0.844 0.170 – 0.216<br>(20.80 – 21.44) (4.32 – 5.49)<br>0.780 – 0.800<br>(19.81 – 20.32)<br>0.080 – 0.100<br>0.040 – 0.055 0.1 00 BSC (2.03 – 2.54)<br>(1.02 – 1.40) (2.54 BSC) 0.016 – 0.031<br>fh | J | (0.41 – 0.79)<br>1  2  3  4  5<br>**----- End of picture text -----**<br>

Updated at June 9, 2026

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