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AIKYX120N75CP2ALSA1
IGBT, AEC-Q101, 150 A, 1.35 V, 577 W, 750 V, TO-247 Plus, 4 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: Duo Pack EDT2 Series
- Power Dissipation: 577W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247 Plus
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Saturation Voltage: 1.35V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.18 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** ## **Final datasheet** ## **Duo Pack EDT2[™] IGBT and emitter controlled diode in TO247PLUS package** ## **Features** - VCE = 750 V - IC = 120 A - Suitable for 470 V VDC systems and increased overvoltage margin for 400 V VDC systems - Very low VCEsat (C-KE) = 1.21 V (typ.) at ICnom = 120 A, 25°C - Up to 40% less System Rth due to reflow capability, increased power output - 30% Less Turn On Energy loss compared to 3 pin devices due to Kelvin emitter - Short circuit robust tsc = 3 µs at VCE = 470 V, VGE = 15 V - Self limiting current under short circuit condition - Positive thermal coefficient and very tight parameter distribution for easy paralleling - Excellent current sharing in parallel operation - Smooth switching characteristics - Low gate charge QG - Simple gate driver design - Co-packed with fast soft recovery emitter controlled diode (Emcon3) - Low EMI signature - TO247PLUS package with high creepage distance 6.6 mm - High reliability and operating lifetime, proven power cycling sec. robustness - Wide Power pins (2 mm) for high current busbar - Resistive weldable pins for direct busbar connections - Lead-free plated pins and back ## **Potential applications** - xEV traction inverter - DC-link discharge switch - Automotive aux-drives ## **Product validation** - Qualified according to AEC-Q101 for automotive applications - Qualified Reflow device 260°C according to JEDEC J-STD-020 MSL2 ## **Description** Package pin definition: - Pin C (1) & backside - collector - Pin E (2) - emitter - Pin K (3) - Kelvin emitter - Pin G (4) - gate **==> picture [539 x 37] intentionally omitted <==** **----- Start of picture text -----**<br> Type Package Marking<br>AIKYX120N75CP2 PG-TO247-4-PLUS-WT7 AKYX12FCP<br>><br>**----- End of picture text -----**<br> Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2024-07-23 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .19| Datasheet Revision 1.00 2024-07-23 2 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance|_L_E|simulated starting from L2 at 1 MHz|||3.8||nH| |Collector-emitter loop<br>inductance|_L_CE|simulated starting from L2 at 1 MHz|||6.2||nH| |Main emitter pin resistance|_R_E|Simulated starting from L2 at 10 kHz|||0.41||mΩ| |Storage temperature|_T_stg|||-55||150|°C| |Soldering temperature|_T_sold|reflow soldering (MSL2 according to JEDEC<br>J-STD-020)||||260|°C| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40||K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)||||0.2|0.26_1)_|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)||||0.35|0.45_1)_|K/W| _1)_ Defined by simulation, not subject to production test ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||750|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|150|A| ||||_T_c= 100 °C|120|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||360|A| |Turn-of safe operating<br>area||_V_CE≤ 750 V,_T_vj≤ 175 °C||360|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p= 10 µs,_D_< 0.01||±30|V| |Short-circuit withstand<br>time|_t_SC|_V_CC≤ 470 V,_V_GE= -8/15 V, Allowed number<br>of short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 25 °C||3|µs| |Power dissipation|_P_tot|_T_vj= 175 °C|_T_c= 25 °C|577|W| ||||_T_c= 100 °C|288|| Datasheet Revision 1.00 2024-07-23 3 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 120 A,_V_GE= 15 V|_T_vj= 25 °C|1.2|1.35|1.5|V| ||||_T_vj= 175 °C||1.55||| |Collector-Kelvin emitter<br>saturation voltage|_V_CEsat<br>_(C-KE)_|_I_C= 120 A,_V_GE= 15 V|_T_vj= 25 °C||1.21||V| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 1.6 mA, VCE= VGE||5.2|5.8|6.4|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 750 V,_V_GE=0 V|_T_vj= 25 °C|||200|µA| ||||_T_vj= 175 °C||5||mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 120 A,_V_CE= 20 V|||89||S| |Short-circuit collector<br>current|_I_SC|_V_CC≤ 470 V,_V_GE= -8/15 V,_t_SC≤ 3 µs, Allowed<br>number of short circuits < 1000, Time<br>between short circuits ≥ 1.0 s,_T_vj= 25 °C|||1150||A| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE=0 V,_f_= 100 kHz|||13500||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE=0 V,_f_= 100 kHz|||337||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE=0 V,_f_= 100 kHz|||59||pF| |Gate charge|_Q_G|_V_CC= 600 V,_I_C= 120 A,_V_GE= -8/15 V|||765||nC| |Turn-on delay time|_t_d(on)|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||48||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||48||| |Rise time (inductive load)|_t_r|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||27||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||32||| |Turn-of delay time|_t_d(of)|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||202||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||276||| |Fall time (inductive load)|_t_f|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||65||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||129||| **(table continues...)** Datasheet Revision 1.00 2024-07-23 4 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-on energy_1)_|_E_on|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||3.3||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||5||| |Turn-of energy|_E_of|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||3.6||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||6.4||| |Total switching energy|_E_ts|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 4.8 Ω,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_C= 120 A||6.9||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||11.4||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _1)_ includes IGBT losses caused by the reverse recovery current _**Note** : Electrical Characteristic, at T_ vj _= 25°C, unless otherwise specified._ ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**||||| |---|---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Repetitive peak reverse<br>voltage|_V_RRM|_T_vj≥ 25 °C|||750|V| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_c= 25 °C||150|A| ||||_T_c= 100 °C||120|| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse||||360|A| |Power dissipation|_P_tot|_T_vj= 175 °C|_T_c= 25 °C||333|W| ||||_T_c= 100 °C||167|| |**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|**Table 5**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 120 A|_T_vj= 25 °C|1.6|1.8|2|V| ||||_T_vj= 175 °C||1.8||| |**(table continues...)**|||||||| Datasheet Revision 1.00 2024-07-23 5 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 470 V|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 4282 A/µs||4.1||µC| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 3628 A/µs||10.9||| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 470 V|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 4282 A/µs||60.8||A| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 3628 A/µs||90.9||| |Reverse recovery energy|_E_rec|_V_R= 470 V,_L_σ= 20 nH,<br>_C_σ= 15 pF|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 4282 A/µs||1.6||mJ| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 3628 A/µs||3.9||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _**Note** : For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ Datasheet Revision 1.00 2024-07-23 6 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **4 Characteristics diagrams** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **==> picture [252 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Power dissipation as a function of case temperature<br>Ptot = f(Tc)<br>T ≤ 175 °C<br>vj<br>**----- End of picture text -----**<br> **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical output characteristic** IC = f(VCE(C-KE)) T = 175 °C vj **==> picture [141 x 43] intentionally omitted <==** **----- Start of picture text -----**<br> Typical output characteristic<br>IC = f(VCE(C-KE))<br>T = 25 °C<br>vj<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0<br>**----- End of picture text -----**<br> **Typical transfer characteristic** IC = f(VGE) VCE = 20 V **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 4 5 6 7 8 9 10 11 12<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 7 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Typical collector-Kelvin emitter saturation voltage as a function of junction temperature** VCEsat (C-KE) = f(Tvj) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.4<br>1.3<br>1.2<br>1.1<br>1.0<br>0.9<br>0.8<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) VCC = 470 V, Tvj = 25 °C, RG = 4.8 Ω ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 1.6 mA **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6.0<br>5.5<br>5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>25 46 68 89 111 132 154 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) VCC = 470 V, Tvj = 175 °C, RG = 4.8 Ω **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100 100<br>10 10<br>1 1<br>0 60 120 180 240 300 360 0 60 120 180 240 300 360<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 8 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Typical switching times as a function of gate resistor Typical switching times as a function of gate resistor** t = f(RG) t = f(RG) IC = 120 A, VCC = 470 V, Tvj = 25 °C IC = 120 A, VCC = 470 V, Tvj = 175 °C **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100 100<br>10 10<br>0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40<br>Typical switching times as a function of junction Typical switching energy losses as a function of<br>temperature collector current<br>t = f(Tvj) E = f(IC)<br>IC = 120 A, VCC = 470 V, RG = 4.8 Ω VCC = 470 V, Tvj = 25 °C, RG = 4.8 Ω<br>1000 30<br>25<br>20<br>100 15<br>10<br>5<br>10 0<br>25 50 75 100 125 150 175 0 60 120 180 240 300 360<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 9 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [229 x 21] intentionally omitted <==** **----- Start of picture text -----**<br> Typical switching energy losses as a function of<br>collector current<br>**----- End of picture text -----**<br> **Typical switching energy losses as a function of gate resistor** **==> picture [540 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> E = f(IC)C)) E = f(RG)G))<br>VCC = 470 V, Tvj = 175 °C, RG = 4.8 ΩCC = 470 V, Tvj = 175 °C, RG = 4.8 Ω = 470 V, Tvj = 175 °C, RG = 4.8 Ωvj = 175 °C, RG = 4.8 Ω = 175 °C, RG = 4.8 ΩG = 4.8 Ω = 4.8 Ω IC = 120 A, VCC = 470 V, Tvj = 25 °CC = 120 A, VCC = 470 V, Tvj = 25 °C = 120 A, VCC = 470 V, Tvj = 25 °CCC = 470 V, Tvj = 25 °C = 470 V, Tvj = 25 °Cvj = 25 °C = 25 °C<br>50 18<br>16<br>40<br>14<br>12<br>30<br>10<br>8<br>20<br>6<br>4<br>10<br>2<br>0 0<br>0 60 120 180 240 300 360 0 5 10 15 20 25 30 35 40<br>Typical switching energy losses as a function of gate Typical switching energy losses as a function of<br>resistor junction temperature<br>E = f(RG)G)) E = f(Tvj)vj))<br>IC = 120 A, VCC = 470 V, Tvj = 175 °CC = 120 A, VCC = 470 V, Tvj = 175 °C = 120 A, VCC = 470 V, Tvj = 175 °CCC = 470 V, Tvj = 175 °C = 470 V, Tvj = 175 °Cvj = 175 °C = 175 °C IC = 120 A, VCC = 470 V, RG = 4.8 ΩC = 120 A, VCC = 470 V, RG = 4.8 Ω = 120 A, VCC = 470 V, RG = 4.8 ΩCC = 470 V, RG = 4.8 Ω = 470 V, RG = 4.8 ΩG = 4.8 Ω = 4.8 Ω<br>25 12<br>10<br>20<br>8<br>15<br>6<br>10<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **==> picture [540 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> E = f(IC)C)) E = f(RG)G))<br>VCC = 470 V, Tvj = 175 °C, RG = 4.8 ΩCC = 470 V, Tvj = 175 °C, RG = 4.8 Ω = 470 V, Tvj = 175 °C, RG = 4.8 Ωvj = 175 °C, RG = 4.8 Ω = 175 °C, RG = 4.8 ΩG = 4.8 Ω = 4.8 Ω IC = 120 A, VCC = 470 V, Tvj = 25 °CC = 120 A, VCC = 470 V, Tvj = 25 °C = 120 A, VCC = 470 V, Tvj = 25 °CCC = 470 V, Tvj = 25 °C = 470 V, Tvj = 25 °Cvj = 25 °C = 25 °C<br>50 18<br>16<br>40<br>14<br>12<br>30<br>10<br>8<br>20<br>6<br>4<br>10<br>2<br>0 0<br>0 60 120 180 240 300 360 0 5 10 15 20 25 30 35 40<br>Typical switching energy losses as a function of gate Typical switching energy losses as a function of<br>resistor junction temperature<br>E = f(RG)G)) E = f(Tvj)vj))<br>IC = 120 A, VCC = 470 V, Tvj = 175 °CC = 120 A, VCC = 470 V, Tvj = 175 °C = 120 A, VCC = 470 V, Tvj = 175 °CCC = 470 V, Tvj = 175 °C = 470 V, Tvj = 175 °Cvj = 175 °C = 175 °C IC = 120 A, VCC = 470 V, RG = 4.8 ΩC = 120 A, VCC = 470 V, RG = 4.8 Ω = 120 A, VCC = 470 V, RG = 4.8 ΩCC = 470 V, RG = 4.8 Ω = 470 V, RG = 4.8 ΩG = 4.8 Ω = 4.8 Ω<br>25 12<br>10<br>20<br>8<br>15<br>6<br>10<br>4<br>5<br>2<br>0 0<br>0 5 10 15 20 25 30 35 40 25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 10 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **==> picture [540 x 646] intentionally omitted <==** **----- Start of picture text -----**<br> Typical switching energy losses as a function of Typical switching energy losses as a function of<br>collector emitter voltage collector emitter voltage<br>E = f(VCE) E = f(VCE)<br>IC = 120 A, Tvj = 25 °C, RG = 4.8 Ω IC = 120 A, Tvj = 175 °C, RG = 4.8 Ω<br>8 14<br>12<br>6<br>10<br>8<br>4<br>6<br>4<br>2<br>2<br>0 0<br>200 250 300 350 400 450 500 200 250 300 350 400 450 500<br>Typical gate charge Typical capacitance as a function of collector-emitter<br>VGE = f(QG) voltage<br>IC = 120 A C = f(VCE)<br>f = 100 kHz<br>15.0 100000<br>12.5<br>10.0 10000<br>7.5<br>5.0 1000<br>2.5<br>0.0 100<br>-2.5<br>-5.0 10<br>-7.5<br>-10.0 1<br>0 100 200 300 400 500 600 700 800 0 125 250 375 500 625 750<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 11 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical short circuit collector current as a function of gate-emitter voltage** IC(SC) = f(VGE) ## Tvj = 175 °C, VCC = 470 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1400<br>1200<br>1000<br>800<br>600<br>400<br>200<br>0<br>10.0 11.0 12.0 13.0 14.0 15.0 16.0 17.0<br>**----- End of picture text -----**<br> ## **IGBT transient thermal impedance as a function of pulse width** Zth(j-c) = f(tp) ## **Short circuit withstand time as a function of gateemitter voltage** **==> picture [49 x 11] intentionally omitted <==** **----- Start of picture text -----**<br> tSC = f(VGE)<br>**----- End of picture text -----**<br> **==> picture [105 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> Tvj = 175 °C, VCC = 470 V<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5.0<br>4.5<br>4.0<br>3.5<br>3.0<br>2.5<br>2.0<br>13.0 13.5 14.0 14.5 15.0<br>**----- End of picture text -----**<br> **Power dissipation as a function of case temperature** Ptot = f(Tc) T ≤ 175 °C vj D = tp/T **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0.1<br>0.01<br>0.001<br>0.0001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 12 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Diode transient thermal impedance as a function of pulse width** Zth(j-c) = f(tp) **Typical diode forward current as a function of forward voltage** IF = f(VF) D = tp/T **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 1 250<br>0.1 200<br>0.01 150<br>0.001 100<br>0.0001 50<br>1E-5 0<br>1E-7 1E-6 1E-5 0.0001 0.001 0.01 0.1 1 0.0 0.5 1.0 1.5 2.0 2.5<br>Typical diode forward voltage as a function of Typical reverse recovery time as a function of diode<br>junction temperature current slope<br>VF = f(Tvj) trr = f(diF/dt)<br>VR = 470 V, IF = 120 A<br>2.00 500<br>1.80<br>400<br>1.60<br>300<br>1.40<br>200<br>1.20<br>100<br>1.00<br>0.80 0<br>25 50 75 100 125 150 175 500 2500 4500 6500 8500 10500<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 13 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical reverse recovery charge as a function of diode current slope** Qrr = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 12.0<br>10.0<br>8.0<br>6.0<br>4.0<br>2.0<br>0.0<br>500 2500 4500 6500 8500 10500<br>**----- End of picture text -----**<br> ## **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** dirr/dt = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 0<br>-500<br>-1000<br>-1500<br>-2000<br>-2500<br>-3000<br>-3500<br>-4000<br>500 2500 4500 6500 8500 10500<br>**----- End of picture text -----**<br> ## **Typical reverse recovery current as a function of diode current slope** Irrm = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160<br>140<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>500 2500 4500 6500 8500 10500<br>**----- End of picture text -----**<br> ## **Typical reverse energy losses as a function of diode current slope** Erec = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>4<br>3<br>2<br>1<br>0<br>500 2500 4500 6500 8500 10500<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 14 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical diode current slope as a function of gate resistor** diF/dt = f(RG) VR = 470 V, IF = 120 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 11000<br>10000<br>9000<br>8000<br>7000<br>6000<br>5000<br>4000<br>3000<br>2000<br>1000<br>0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2024-07-23 15 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** **==> picture [408 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> A Bottom view<br>E<br>(A2) (E1)<br>A3<br>(b2) (b3)<br>A1 (E2)<br>2× 2×<br>1 2 3 4 c 4 3 2 1<br>e (b1)<br>e2<br>2×<br>(b)<br>e1<br>2×<br>PACKAGE - GROUP<br>NUMBER: PG-TO247-4-U06<br>MILLIMETERS MILLIMETERS<br>DIMENSIONS DIMENSIONS<br>MIN. MAX. MIN. MAX.<br>A 4.7 4.9 D4 1.03<br>A1 2.16 2.66 D5 2.98<br>A2 2 D6 2.05<br>A3 1.51 1.71 E 15.7 15.9<br>A4 0.99 E1 12.38<br>b 2 E2 2.8<br>b1 0.7 e 7.32<br>b2 2.3 e1 2.79<br>b3 1.5 e2 2.54<br>c 0.5 0.7 L 18.01 18.21<br>D 22.7 22.9 L1 1.6<br>D1 14.79 L2 2.36<br>D2 15.86 aaa 0.25<br>D3 19.82<br>1) All metal surfaces tin plated except area of cut<br>2) Mold gate protrusion after degating.<br>All dimensions are in units mm<br>The drawing is in compliance with ISO 128-30, Projection Method 3 [ ]<br>Drawing according to ISO 8015, general tolerances<br>D (D3) (D2) (D1)<br>(D5)<br>(D6)<br>(L2)<br>(L1)<br>(D4)<br>L<br>(A4)<br>**----- End of picture text -----**<br> **Figure 1** Datasheet Revision 1.00 2024-07-23 16 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2024-07-23 17 **AIKYX120N75CP2 Duo Pack EDT2[™] IGBT** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2024-03-26|Preliminary datasheet| |1.00|2024-07-19|Final datasheet| Datasheet Revision 1.00 2024-07-23 18 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-07-23 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABB835-002** Infineon Technologies in customer’s applications. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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