Image not available
Illustrative purposes only
AIKW75N60CTXKSA1
IGBT, 80 A, 1.5 V, 428 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 428W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.55 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [469 x 304] intentionally omitted <==** **----- Start of picture text -----**<br> Low Loss DuoPack: IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery antiparallel Emitter Controlled diode<br>Features: C<br>« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI *<br>« Low gate charge Q G Gi,<br>* Green package reMineo,<br>« Very soft, fast recovery antiparallel Emitter Controlled HE aeier<br>diode<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V rd<br>applications offers: ’ £<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- very high switching speed<br>G<br>C<br>E<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKW75N60CT|600V|75A|1.5V|175°C|AK75DCT|PG-TO247-3| Datasheet www.infineon.com 2017-02-09 AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2017-02-09 Datasheet AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Maximum�Ratings** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>75.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||225.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||225.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>75.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||225.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_C=25°C|_P_tot||428.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.35|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.60|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.1 2017-02-09 Datasheet AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=75.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.20mA,_V_CE=_V_GE|4.1|4.9|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1750|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=75.0A|-|41.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|4620|-|pF| |Output capacitance|_C_oes||-|288|-|| |Reverse transfer capacitance|_C_res||-|137|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|470.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|690|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=100nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns| |Rise time|_t_r||-|36|-|ns| |Turn-off delaytime|_t_d(off)||-|330|-|ns| |Fall time|_t_f||-|35|-|ns| |Turn-on energy|_E_on||-|2.00|-|mJ| |Turn-off energy|_E_off||-|2.50|-|mJ| |Total switchingenergy|_E_ts||-|4.50|-|mJ| V�2.1 2017-02-09 Datasheet 4 AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1460A/µs|-|121|-|ns| |Diode reverse recoverycharge|_Q_rr||-|2.40|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|39.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-920|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=75.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=5.0Ω,_R_G(off)=5.0Ω,<br>_L_σ=100nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|32|-|ns| |Rise time|_t_r||-|37|-|ns| |Turn-off delaytime|_t_d(off)||-|363|-|ns| |Fall time|_t_f||-|38|-|ns| |Turn-on energy|_E_on||-|2.90|-|mJ| |Turn-off energy|_E_off||-|2.90|-|mJ| |Total switchingenergy|_E_ts||-|5.80|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=75.0A,<br>_di_F_/dt_=1460A/µs|-|182|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|5.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|56.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-1000|-|A/µs| V�2.1 2017-02-09 Datasheet 5 AIKW75N60CT ## ~~series~~ TRENCHSTOP[TM] **==> picture [474 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 450 90<br>400 KEE EEE) 80 EET<br>350 NEE [ty] 70 EE EtA<br>300 60<br>ee ee<br>250 50<br>PACERS [PEA] ee<br>200 40<br>PONCE EEE<br>150 30<br>PEON) Pee aC<br>is eG<br>100 20<br>50 Pp PEN OE 10<br>PPP PEN ELT<br>0 0 TT<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C “CASE TEMPERATURE [°C T C “CASE TEMPERATURE[I<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br> **==> picture [472 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 225 225<br>VGE=20V VGE=20V<br>200 15V 200 15V<br>13V 13V<br>ING Z PNY,<br>175 175<br>11V NLL 11V NNO IAZ<br>9V 9V<br>150 150<br>7V 7V<br>125 125<br>100 100<br>BN NWO LL<br>75 75<br>| PENRZETE PENSNNR<br>50 50<br>ff KE Le<br>25 25<br>YN) Pe e<br>PAT)<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE “COLLECTOR-EMITTER VOLTAGE M V CE “COLLECTOREMITTER VOLTAGE I<br>I C I C<br>**----- End of picture text -----**<br> **==> picture [80 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3.<br>( T vj=25°C)<br>**----- End of picture text -----**<br> Figure 4. ( _T_ vj=175°C) 6 Datasheet 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [230 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 100 LY<br>Tvj = 25°C<br>90 Tvj = 175°C<br>EJ.<br>80 PT Ta<br>70<br>Ww5 I,<br>ia 60 | /<br>a<br>=)<br>wv 50<br>ee<br>40<br>© 30<br>/<br>/<br>20<br>10<br>vA<br>7<br>7<br>0 = —<br>2 3 4 5 6 7 8 9 10<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 Ld<br>IC = 37.5A<br>2.7 IC = 75A<br>IC = 150A<br>Ey<br>Ss2 2.4 ee e= —= TL<br>FE ae<br>2.1<br>>E<br>(dp) 1.8 _—<br>a _—<br>Lu eT<br>E 1.5<br>= 1.2<br>Ww= 0.9<br>O<br>~<br>0.6<br>0.3<br>0.0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 6. ( _V_ GE=15V) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> — 1000 aa<br>td(off) I td(off)<br>1000 e a a S tf — tf aSS ee _——_|ee eee<br>td(on) td(on)<br>————————_—_————a ee ee eeaeee tr —hi | e tr P|celes<br>iSz ae e eiS f )<br>es 100 LE<br>= —ee| tl |e<br>= eer ace<br>(5z a 2a eeNeaee aerPLeeaee ee e e eee = 100 a<br>Ee = ma Ee a<br>PL)a eee<br>10 ee<br>a Gs SO ce<br>SS eee aa<br>aSSa EPP<br>1 10<br>0 20 40 60 80 100 120 140 160 2 4 6 8 10 12 14 16<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =175°C, V CE=400V, (inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, R G=5 Ω , Dynamic test circuit in V GE =0/15V, I C =75A, Dynamic test circuit in<br>Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br> Datasheet 7 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa<br>I | ttd(off)f po a ee ee ee<br>| td(on) po<br>tr<br>a<br>|<br>|<br>=ee<br>=<br>3Z 100 a<br>= a ee<br>oO a<br>Ee a<br>= eeeeee ee ee<br>a ee ee<br>ae e<br>po} ft | ft<br>10<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>**----- End of picture text -----**<br> Figure 9. (inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =75A, _R_ G=5 , Dynamic test circuit in E) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 7<br>typ.<br>min.<br>max.<br>6<br>4<br>Oo ~~<br>et oe<br>5 5 ~as LL<br>>5 4 PP,= ooioe | ~~<br>i — —<br>uw<br>= ~~<br>><br>3 —<br>_<br>= “A<br><x 2<br>1<br>0<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 10. ( _I_ C=1.2mA) **==> picture [466 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 16 10<br>Eoff Eoff<br>Eon 9 Eon<br>14 Ets Ets<br>/ ,<br>a / a 8 Z|<br>12<br>n / n a“<br>nm nm 7<br>8 10 / 8 La<br>aa 7 aa 6<br>> / > a<br>[ag / iad a<br>nm 8 7 Ww 5 F<br>: Oye lo<br>4<br>ZzoO 6 / J © | Peaee<br>=<br>= y Z ea<br>3<br>E | |<br>=PT 4 | | Yi/ Zc Efe |=ery<br>~ VY / ta =~ 2 pa<br>2 ae4r aan<br>1<br>0 0<br>aa PLL ETT |yy<br>0 20 40 60 80 100 120 140 0 2 4 6 8 10 12 14 16<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br> Figure 11. **==> picture [88 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =175°C, V CE=400V,<br>**----- End of picture text -----**<br> **==> picture [77 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> V GE =0/15V, R G=5 Ω<br>Figure E)<br>**----- End of picture text -----**<br> Figure 12. **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =175°C, V CE=400V,<br>V GE =0/15V, I C =75A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 8 Datasheet 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 6 10<br>Eoff Eoff<br>Eon 9 Eon<br>Ets Ets<br>5<br>8<br>Ww2) (op)Ww 7 “a<br>7) 4 7)<br>o o y<br>—! —! 6 7<br>> > “t<br>O O “<br>3 5<br>ee2- eee 4 eee<br>-<br>2<br>: ee<br>3<br>2<br>1<br>1<br>0 0<br>25 50 75 100 125 150 175 300 350 400 450 500 550 600<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=0/15V, (inductive load, T vj =175°C, V GE=0/15V,<br>I C =75A, R G=5 , Dynamic test circuit in I C =75A, R G=5 , Dynamic test circuit in<br>Figure E) Figure E)<br>18<br>o V CC v [-—_— Cies _ |<br>V CC Coes<br>16 Cres<br>VA == -+-—+—-+ 4+—<br>} 1E+4 S ee<br>— 14 VA Sa es es<br>S— / / A a ee ee ee ee ee<br>3) / eeee<br>< 12 au a<br>— \<br>10 1000<br>: Js pe ho |<br>iw Y |7 2 Ee<br>LuE= 8 a a WA y iOa pypaNU nt<br>ih a. Ne ee eee<br>i<br>é 6<br>eee<br>100<br>4 ——————<br>aa<br>asees<br>ee<br>2<br>0 10<br>SR ee eee<br>0 100 200 300 400 500 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=75A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [477 x 660] intentionally omitted <==** **----- Start of picture text -----**<br> 1250 14<br>1125<br><x Z 12 TEER EEL<br>1000<br>pL Re<br>eee 4a 10<br>875<br>3 4 F _<br>nr ae: N<br>750<br>© a ; 8 aN<br>ae N<br>625<br>3 ZL = “<br>6<br>e | oA S ~<br>rs)= 500 7LZ 45 Sy<br>Ob<br>375<br>:pe= | :op) 4<br>250<br>2<br>125<br>“TTT TTT Tye<br>0 0<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T j 150°C) ( V CE =400V, start at T vj =25°C, T jmax ≤ 150°C)<br>1<br>a a | ee<br>Hii |<br>= 1 aa i ee<br>Hit<br>= | Y = ME TE TTI TT erin TUTTI<br>a Ss a<br>= PL d reata nt ee an |<br>0.1<br>eIZOMG ae cag mSd TK |<br>fa Con oR OS nil), 0.1 I AGA LUNN<br>ry Cc CPS D = 0.5 Con = Pea D = 0.5<br>0.2 0.2<br>-_ y 0.1 -_ a /) i ~ 0.1<br>0.05 0.05<br>2 SEIT aapes Aun ssaai I PU aS Te it a<br>0.02 0.02<br>Cae 0.01 IC 2 ee 0.01 TC<br>single pulse single pulse<br>usa 0.01 CTT) Lheee | uske Ae| ot LS I<br>SN are<br>wy lll & 0.01 CLIMPATTTTINTj<br>x eal ' i x =a ‘ eC<br>< SHEET Hof = ESA GHG H<br>eA ee CP Ie<br>i: 1 2 3 4 i: 1 2 3 4 5<br>|LE r τ ii[K/W]:[s]: 0.0291.2E-4 0.05098.2E-4 0.07339.3E-3 0.19680.115504 O00 r τ ii[K/W]:[s]: 0.041.0E-5 0.08181.2E-4 0.12611.2E-3 0.16810.015543 0.18460.110373<br>0.001 We | 0.001 /| TT TT TTT TTT TT T T<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal impedance as a Figure 20. Diode transient thermal impedance as a<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>**----- End of picture text -----**<br> ( _D_ = _t_ p/T) ( _D_ = _t_ p/T) 10 Datasheet 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [491 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 250 7<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>225 Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>a= 6<br>~<br>200 Oo ee ee a<br>= ~ 3 —<br>uwF= 175 d ~ ~~ x 5<br>E e ~~ 5<br>150<br>e [>] 4<br>: 125<br>——t-— 8<br>3<br>100<br>7<br>: ys |<br>2 ft<br>75<br>2<br>50<br>1 ef} td<br>25<br>0 0<br>1000 1200 1400 1600 1800 2000 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> **==> picture [14 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R<br>**----- End of picture text -----**<br> **==> picture [14 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R<br>**----- End of picture text -----**<br> **==> picture [476 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 70 -200<br>Tvj = 25°C, IF = 75A Tvj = 25°C, IF = 75A<br>Tvj = 175°C, IF = 75A Tvj = 175°C, IF = 75A<br>60<br>-400<br>-e 50 — PN*<br>x = [><br>-600<br>oO> 40 |=<br>> -800<br>O 5— NS<br>30<br>ia<br>He 3 1000 SN<br>iy 20 aN<br>or.\ NY<br>-1200<br>10 esee<br>\<br>0 -1400<br>1000 1200 1400 1600 1800 2000 1000 1200 1400 1600 1800 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> > ( crea _V_ R = 11 Datasheet 2017-02-09 AIKW75N60CT ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 225 Ld / 2.50 Le<br>Tvj = 25°C IF = 37.5A<br>Tvj = 175°C IF = 75A<br>200 EO) |) fy 2.25 IF = 150A<br>175<br>2.00<br>= 150 uw<br>im= pp tt 7<x 1.75 P| | tt<br>ag / Ee<br>a 125 /| re}<br>a) ><br>1.50<br>100<br><x Q PT 7<br>1.25<br>75<br>1.00<br>50<br>0.75<br>25<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 25. Figure 26. 12 Datasheet 2017-02-09 AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Package Drawing PG-TO247-3** 13 V�2.1 2017-02-09 Datasheet AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2017-02-09 Datasheet AIKW75N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Revision�History** AIKW75N60CT ## **Revision:�2017-02-09,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2017-02-09|Data sheet created| 15 V�2.1 2017-02-09 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →