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AIKW50N65DF5XKSA1
IGBT, 80 A, 1.66 V, 270 W, 650 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.66V; Power Dissipation Pd:270W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-247; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 270W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.66V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.57 € |
| Current stock | 100+ |
| Lead time | 30 days |
Datasheet
## AIKW50N65DF5
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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>650V breakdown voltage<br>G<br>Low gate charge Q G<br>E<br>IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>Maximum junction temperature 175°C<br>Dynamically stress tested<br>Qualified according to AEC-Q101<br>Green package (ROHS compliant) rs<br>Complete product spectrum and PSpice Models: Gi,<br>http://www. infineon.com/igbt/ re liteg,<br>Applications:<br>‘d<br>Off-board charger<br>On-board charger<br>DC/DC converter<br>Power-Factor correction 1<br>2<br>3<br>**----- End of picture text -----**<br>
## **Applications:**
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKW50N65DF5|650V|50A|1.66V|175°C|AK50EDF5|PG-TO247-3|
Datasheet www.infineon.com
2017-06-30
AIKW50N65DF5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
AIKW50N65DF5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>53.5|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||40.0<br>27.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||270.0<br>136.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.55|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.50|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
2) Package not recommended for surface mount applications
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.66<br>1.90<br>2.03|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=25.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.54<br>1.52<br>1.49|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1200|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|62.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2800|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|108.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|12|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|6|-|ns|
|Turn-on energy|_E_on||-|0.49|-|mJ|
|Turn-off energy|_E_off||-|0.14|-|mJ|
|Total switchingenergy|_E_ts||-|0.63|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|4|-|ns|
|Turn-off delaytime|_t_d(off)||-|173|-|ns|
|Fall time|_t_f||-|10|-|ns|
|Turn-on energy|_E_on||-|0.10|-|mJ|
|Turn-off energy|_E_off||-|0.03|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1200A/µs|-|77|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.68|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|15.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-258|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1200A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-759|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|191|-|ns|
|Fall time|_t_f||-|5|-|ns|
|Turn-on energy|_E_on||-|0.68|-|mJ|
|Turn-off energy|_E_off||-|0.25|-|mJ|
|Total switchingenergy|_E_ts||-|0.93|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|229|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.18|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1200A/µs|-|123|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.47|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-214|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1200A/µs|-|65|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.71|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|19.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-462|-|A/µs|
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AIKW50N65DF5
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270 90<br>240 80<br>a<br>210 PX 70 E R<br>180 60<br>ef No ye PN<br>150 50<br>aN pf NN<br>By 120 40 EN<br>90 30<br>PPE ENE E PEP EN<br>60 20<br>SeeeNe TE EN<br>30 a ee 10 ene<br>0 PPP TN 0 EEL TA<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 1. Power **temperature** ( _T_ vj ≤ 175°C)
Figure 2. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C)
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150 150<br>135 135<br>Baan) ee e eee eae<br>120 120<br>VGE = 20V VGE = 20V<br>SaP7/|/aaae pl Le |<br>18V 18V<br>105 105<br>15V 15V<br>z 90 | LB z 90 ae a<br>ZAP 12V 12V Ep<br>75 10V 75 10V<br>8V 8V<br>aes Peg<br>60 60<br>BC Soe ae<br>7V 7V<br>45 6V 45 6V<br>5V 5V<br>30 30<br>PL NWPT EP La<br>15 15<br>Ry KES<br>0 P 42 o e e 0 eAe<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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## AIKW50N65DF5
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**----- Start of picture text -----**<br>
150 / 2.50 Ld<br>T vj I C<br>135 E T vj =150°C s. —- I C =12.5A<br>—- 7] // / _= 2.25 Es---so II CC =25A= BOA t.<br>120 / z<br>s<br>2.00<br><| ll =<br>105<br>pf | | | ft |s<br>1.75<br>Ww 90 Ufep)<br>oe <x<br>.BE geE ep<br>a 7560 Ff _e Eead 1.50<br>a FE 1.25<br>fe) / / O<br>rs) 45 / a<br>. _<br>1.00<br>30<br>| /a 0.75 Z{tt2ee<br>15<br>2 a ee<br>0 0.50<br>4 5 6 7 8 9 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000 a a 1000 a SS SS ES ES<br>|1 td(off) ee ee ee | td(off) a ee ee ee ee<br>I tf eea a ee ee i| tf aa ea e d<br>td(on) td(on)<br>tr tr<br>| Ff} -E be ee eee<br>a p o P | aoteee<br>re tT |<br>5 [ =<br>— 100 a Pn cs 100 a<br>ip)uw a e es es ecee ee ip) a es edee<br>= ee eo a a de<br>- a ee en ee = re ee ee ee ee ee<br>Q aa eeee eeee eeee eeee a e eee eee<br>te ee |<br>E a“<br>= ‘ / i a J<br>2)- 10 aaae\| aA es =2)- 10 aae y<br>ae A ee ee a a ee ee ee ee ee<br>a a a a<br>Poa NA a eaeeee ee<br>ee ee Ee a a ee ee ee<br>a Po | ot tT | dT<br>1 1<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistance<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G(on)=12 Ω , R G(off)=12 Ω , dynamic V GE =0/15V, I C =25A, dynamic test circuit in<br>test circuit in Figure E) Figure E)<br>t t<br>**----- End of picture text -----**<br>
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AIKW50N65DF5
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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 td(off) a aee aee ee typ.<br>tf min.<br>td(on) 5.0 max.<br>I a eeee ee ee eee _ a == |<br>tr<br>a rr <x4 4.5 a<br>100 4.0<br>ip) a i | aN<br>im poa a a (e) ~~N S<br>- es ee Ww 3.5 a S<br>= aa ~<br>3.0<br>a ee ee ee ee aa —<br>= = ~<br>2) 10 a eS = 2.5<br>7 a 7 Nn<br>poa wi XN<br>poea |a|dga 2.0 | | | PM<br>a a ee ee NS<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, ( I C=0.3mA)<br>I C =25A, R G(on)=12 Ω ; R G(off)=12 Ω , dynamic test<br>circuit in Figure E)<br>11 2.4<br>Eoff Eoff<br>10 — Eon ) 2.2 Jeq Eon e)<br>Ets Ets<br>=A | - | te,<br>/ me<br>| | | 2.0 Z<br>9<br>mH 7<br>z a ee<br>& / = 1.8 a<br>on 8 / 7<br>7) ge 1.6<br>(op) P : 7 p,) onicp)7) Y Z /<br>7 pa 7 .<br>1.4<br>pa / Ef | re) |<br>6<br>: gfe<br>1.2<br>i | aT<br>Zz fe | & 4 <<br>5<br>WW Va Zz y Lo<br>7 y WW 1.0 a“<br>=r 4 7 =r ae a<br>0.8<br>—Po 3 |e7—VE Pe ae<br>:Ke “13 0.6 Lol| et<br>2<br>ee eedale ee 0.4<br>7<br>1 Aape 0.2 jeepa<br>7 | | | |<br>eee eee<br>0 0.0<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTANCE [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistance<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =0/15V, R G(on)=12 Ω , R G(off)=12 Ω , V GE =0/15V, I C =25A, dynamic test circuit in<br>dynamic test circuit in Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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AIKW50N65DF5
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**----- Start of picture text -----**<br>
1.0 1.2<br>Eoff Eoff<br>Eon 1.1 Eon<br>0.9<br>Ets Ets<br>1.0<br>0.8<br>0.9<br>2) 0.7 e T) 2 Pot | | de<br>(op) 0.8<br>_ _ 8<br>0.6<br>>— 0.7<br>_Y Za<br>22 0.5 0.6<br>0.5<br>g 0.4 g at<br>: ef oe<br>0.4<br>0.3<br>0.3<br>7<br>0.2 a<br>0.2<br>0.1<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj ,JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =25A, _R_ G(on)=12 Ω , _R_ G(off)=12 Ω , test circuit in Figure E)
Figure 14.
(inductive load, _T_ vj =150°C, _V_ GE=0/15V, _I_ C =25A, _R_ G(on)=12 Ω , _R_ G(off)=12 Ω , test circuit in Figure E)
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16 Lt<br>V CC Cies<br>V CC 1E+4 Coes<br>_- = 520V V4 H ot<br>14 { / t Cres a ee<br>a<br>| es es es<br>S 12<br>)<xb f _Le 1000 EEe e<br>= 10 jos pT<br>fewv fp _a aa a<br>: y Z a ee<br>8<br>E Se 100 |<br>= | A aGS Eeffeed<br>LuL 6 fi) | xoO aa aa<br>E - PON<br>5 eaee eee<br>4<br>10<br>a ss<br>aa<br>2 a<br>0 1<br>0 20 40 60 80 100 120 0 5 10 15 20 25 30<br>Q G , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=50A)
Figure 16.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1 Sadist [ee] aciimeetil [ee] [Gee] eetiimmata! [ee] 1 Lea<br>foes [ee] i<br>=> CCI Ce CoNTeerTTT Soeee<br>2 ee ee all = a<br>ETI 2 Aeee<br>D = 0.5 D = 0.5<br>0.2 0.2<br>age 0.1 i rZZ UTI 0.1 UI TY) a CCT0’Qo 0.1<br>Wl= eAKe ae Te 0.05 ro = 0.1 FrSeAT TTIice 0.05 eee ee<br>2 A ec Lee 0.02 TICE = Pomteeter, 0.02<br>ee 0.01 0.01 TI<br>Fail patil YL HNL<br>FELtt re single pulse OCT | Eee single pulse Ha<br>F ra) ae<br>LT) AR a ull ® Hiea HAC ot<br>: egHy, te F ETT A<br>0.01<br>Zz arene cama 0 BPS<br>0.01<br>2 ao re i) & FH EH ae<br>e LAACT a HH mn 4 ~ Tl<br>Cy=A/Ry Co=te/R Hl r TTI AAA) hr, co=tire lll<br>a l OZ CCCr eco<br>PATNI) LUM i: 1 TAT 2 CTT 3 4 TTI 5 TE aii a(R i: 1 2 3 4<br>ri[K/W]: 0.026138 0.118331 0.159109 0.181217 0.065204 ri[K/W]: 0.2723102 0.3217888 0.4470437 0.4588573<br>/ τ i[s]: 3.3E-5 2.5E-4 3.9E-3 0.044084 0.191225 Tl τ i[s]: 1.3E-4 1.1E-3 0.0104944 0.1086427<br>0.001 DY" 0.001 i —<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 17. ( IGBT _D_ = _t_ p/T) transient thermal impedance
> Figure 18. podeunction ( _D_ = _t_ p/T)
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180 a 1.6<br>N — T vj =25°C, I F =25A<br>\ —- T vj =150°C, I F =25A b=<br>\ a<br>160 5) 1.4 | [|]<br>> \ & — T vj =25°C, I F =25A<br>T vj I F<br>Ww& 140 \ W4 1.2 —- = 150°C, =25A<br>Kk= ~ :<br>% — x<br>S 120 >= th 1.0<br>e) ><br>100 0.8<br>a 80 a agu 0.6 tty]<br>“ELE |<br>60 0.4<br>P rrr EE<br>40 0.2<br>500 700 900 1100 1300 1500 1700 1900 500 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
> Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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24 es 0 es<br>— T vj =25°C, I F =25A — T vj =25°C, I F =25A<br>—- T vj =150°C, I F =25A —- T vj =150°C, I F =25A<br>22 TS = -50 SS<br>_— g<br>< oo cd<br>5WW 20 7 LL -100<br>s 18 F -150 ><br>/<br>:<br>oe) \<br>16 | -200 t<br>3O / Vai < \ NL<br>Ww (/ Y ~~ _<br>Ww 14 ZL < -250 IN _<br>eee eee<br>rf 12 VA 3 -300 | |<br>, 10 Vania ; -350 Pf | tt<br>8 -400<br>500 700 900 1100 1300 1500 1700 1900 500 700 900 1100 1300 1500 1700 1900<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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75.0 Lt 2.2<br>T vj<br>T vj<br>2.0<br>62.5<br>I F<br>|i — I F =6.25A<br>1.8 I F<br>< 50.0 j! = --- I F = 25A<br>p ( se<br>z es 1.6 | | | | | fT<br>o fe)<br>.<br>3Q 37.5 Qa ee ee<br>oe$z =e 1.4 | | | | | |<br>25.0<br>Ff<br>1.2<br>ee O ee<br>12.5 i<br>1.0<br>A/ ee<br>LA Tf<br>0.0 0.8 Pp | |TT<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO247-3**
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## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## High�speed�switching�series�fifth�generation
## **Revision�History**
AIKW50N65DF5
## **Revision:�2017-06-30,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-06-30|Data sheet created|
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## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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