Image not available
Illustrative purposes only
AIKW50N60CTXKSA1
IGBT, 80 A, 1.5 V, 333 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:333W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 333W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.96 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [469 x 304] intentionally omitted <==**
**----- Start of picture text -----**<br>
Low Loss DuoPack: IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery antiparallel Emitter Controlled diode<br>Features: C<br>« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI *<br>« Low gate charge Q G Gi,<br>* Green package reMineo,<br>« Very soft, fast recovery antiparallel Emitter Controlled HE aeier<br>diode<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V rd<br>applications offers: ’ £<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- very high switching speed<br>G<br>C<br>E<br>Applications:<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKW50N60CT|600V|50A|1.5V|175°C|AK50DCT|PG-TO247-3|
Datasheet www.infineon.com
2017-02-09
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
2
V�2.1 2017-02-09
Datasheet
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Maximum�Ratings**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_C||80.0<br>50.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||80.0<br>50.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||150.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||333.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.45|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
3
V�2.1 2017-02-09
Datasheet
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=50.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.80mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1250|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|31.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3140|-|pF|
|Output capacitance|_C_oes||-|200|-||
|Reverse transfer capacitance|_C_res||-|93|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|310.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|458|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=103nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|26|-|ns|
|Rise time|_t_r||-|29|-|ns|
|Turn-off delaytime|_t_d(off)||-|299|-|ns|
|Fall time|_t_f||-|29|-|ns|
|Turn-on energy|_E_on||-|1.20|-|mJ|
|Turn-off energy|_E_off||-|1.40|-|mJ|
|Total switchingenergy|_E_ts||-|2.60|-|mJ|
V�2.1 2017-02-09
Datasheet
4
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1280A/µs|-|143|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|1.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|27.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-671|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=50.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=7.0Ω,_R_G(off)=7.0Ω,<br>_L_σ=103nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|27|-|ns|
|Rise time|_t_r||-|33|-|ns|
|Turn-off delaytime|_t_d(off)||-|341|-|ns|
|Fall time|_t_f||-|55|-|ns|
|Turn-on energy|_E_on||-|1.80|-|mJ|
|Turn-off energy|_E_off||-|1.85|-|mJ|
|Total switchingenergy|_E_ts||-|3.65|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=50.0A,<br>_di_F_/dt_=1280A/µs|-|205|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|4.30|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|40.7|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-449|-|A/µs|
V�2.1 2017-02-09
Datasheet
5
AIKW50N60CT
## TRENCHSTOP[TM] ~~OO~~
**==> picture [474 x 650] intentionally omitted <==**
**----- Start of picture text -----**<br>
350 90<br>80<br>300 ST]. 11)COUELL<br>70<br>250<br>60<br>PP XE, HANG<br> NXP 200 pe Ncee<br>50<br>40<br>PPK BEN 150<br>30<br>Pf 100 IN Je Pe A<br>20<br>PUL Geer ES<br>50<br>Sf EP<br>10<br>PEN hE}<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>150 150<br>VGE=20V VGE=20V<br>135 15V 135 15V<br>Na 13V PY, 13V<br>120 120<br>11V NOI 11V SOY ZZ<br>105 105<br>9V 9V<br>2 | W/Zse ERE<br>7V 7V<br>90 90<br>75 75<br>: \NOW Ld 8 LENNIE<br>60 60<br>45 45<br>gs] WA 8 LK eT<br>30 30<br>pK LN<br>15 15<br>YN) Lge<br>PAT<br>0 OL 0 A<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ j=25°C)
Figure 4. Typical ( _T_ j=175°C)
6
Datasheet
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
100 LY 3.0<br>Tvj = 25°C IC = 25A<br>90 Tvj = 175°C 2.7 IC = 50A<br>IC = 100A<br>EJ. EL<br>S _ =<br>Zz a<br>80 (e) 2.4 =<br>= /<br>70 2.1<br>5WW / Ee<br>ov 60 / wo 1.8 —_—<br>oO - —po<br>: 50 PPTL Lt A : 1.5 eee<br>et i _<br>40 1.2<br>Lt yy ye Ct<br>5 / °<br>© 30 = 0.9<br>(e)<br>20 0.6<br>/<br>/<br>10 [| 0.3<br>0 0.0<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
**==> picture [80 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 5. Typical<br>( V CE=20V)<br>**----- End of picture text -----**<br>
Figure 6.
( _V_ GE=15V)
**==> picture [471 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
a 1000 a<br>td(off) I td(off)<br>1000 Je tf tf poe<br>——— td(on) E td(on) ee<br>po tr = I tr es<br>a————————a a es ee | a a a<br>P e P o}<br>etcc t [AO<br>eLLL<br>100<br>~ a SS tl | ~<br>ZzQ a Oeee Zz 100 a a a<br>= a ee ee ee eee a a<br>a a eee OR<br>Ee Ee aS ee<br>ees<br>a 10 ee ee eee<br>a oer aoe<br>aSRSeeee ee eee ST| ee<br>1 10<br>PLT TE Ey PEt<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
**==> picture [149 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, R G=7 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
**==> picture [148 x 29] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, I C =50A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Datasheet
7
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
1000 aa 7<br>I | ttd(off)f po a ee ee ee typ.min.<br>| td(on) po max.<br>tr 6<br>a Oo4 ~~<br>| x ——<br>§ 5 Papa TE<br>=2 > SSL<br>= {| 7 | | fe5 4 PP,= oo | ~~<br>i — —<br>3Z 100 a uw= ~~<br>= a ee ><br>oO a ee ee ee x 3 —<br>E<br>=po “A<br>es re<br>eeas e e eee <x 2<br>erry 1<br>10 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10.
**==> picture [471 x 386] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, ( I C=0,8mA)<br>I C =50A, R G=7 , Dynamic test circuit in Figure<br>E)<br>10 7<br>Eoff Eoff<br>9 Eon Eon<br>Ets Ets<br>6<br>ap)a 8 / / —ap) Y<br>(0p) / (0p) 5 Z<br>Ww 7 5 mm y<br>op) 7 (dp) “<br>e) Jf e)<br>—! 6 —! 7<br>4<br>O / O “<br>wv / w oa<br>y 5<br>3<br>4<br>gpS Z | 3 a<br>E 3 fe; La 3E LT<br>2<br>.<br>Bee7) 2 5 L LL Z|“a a7). a eea<br>1<br>1 tertZ|<br>oa | TL<br>ati<br>0 tt 0<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =175°C, V CE=400V, (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, R G=7 Ω , Dynamic test circuit in V GE =0/15V, I C =50A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
**==> picture [38 x 6] intentionally omitted <==**
**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>
8
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
4.0 6<br>Eoff Eoff<br>Eon Eon<br>3.5 Ets Ets<br>5<br>3.0<br>Lu Leo Lu 2<br>7) _e-- 7) 4 2<br>2) - 2) ><br>@) 2.5 O pea<br>— — LC<br>> > pea<br>O O oc<br>2.0 3<br>oO oO —<br>1.5<br>5 -———_] _- 5 2 =~ |<br>2=fe-p E — |tae<br>1.0<br>.n —_—<br>1<br>0.5<br>0.0 0<br>25 50 75 100 125 150 175 300 325 350 375 400 425 450 475 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =50A, _R_ G=7 , Dynamic test circuit in Figure E)
Figure 14.
**==> picture [151 x 28] intentionally omitted <==**
**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V GE=0/15V,<br>I C =50A, R G=7 , Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br>
**==> picture [471 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
20<br>T V r CC inv [-—_— Cies _ |<br>18 V CC Coes<br>Cres<br>== -+-—+—-+ 4+—<br>1E+4<br>16<br>— a ss<br>> / a a<br>e 14 f — —<br>W L No<br>a: 12 L LuTh ql\<br>1000<br>ow 7 B a<br>Ww / / 2 EE<br>FE= 10 J Ooi ERa<br>= a peo<br>oi 8 a a. pA} aff<br>ke - ~~<br><x ~~~<br>: 6 ie ee<br>100<br>a ss<br>4 a a<br>po<br>2<br>ee ee ee ee ee ee<br>0 10<br>0 50 100 150 200 250 300 350 400 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
9
Datasheet
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [477 x 643] intentionally omitted <==**
**----- Start of picture text -----**<br>
900 14<br>800<br>12<br>x BERR RRED PL tt tt Tt<br>ei 700 Re<br>z 7Oia . NN<br>10<br>Y 2 |} [NE]<br>600<br>xef es ti | Neettt<br>LuO 500 yen 8 FRAN<br>: | = N<br>e 7 Ee tet} NY<br>400<br>E LZ Se 6 ee<br>=) ? a) ~<br>py aeO N<br>A 300 EEE<br>4<br>200<br>x=S e tt tt}te<br>ee 2 ee<br>ee 7)<br>100<br>0 0<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T j 150°C) ( V CE =400V, start at T j =25°C, T jmax ≤ 150°C)<br>1 | 1<br>PT [TT] TT PTT | | a PT PT | |<br>| |<br>a a | | ce<br>_ ee et es ccin — ec | geet TI<br>s AO ee = ACS eT<br>aeet Oe MAN A | erg Zc|<br>g va ¢ TIM<br>0.1 0.1<br>a ee a SLIM MILANI STINT ATL<br>D = 0.5 D = 0.5<br>oO ee a7 as: ment os CPCS TC<br>7= I 0.20.1 se AA 0.20.1<br>z a i meet 0.05 0 || 7 I Al SNe 0.05 A |<br>- ec) 0.02 = A ce) ess SR A 0.02<br>Heo 0.01 i ASS 0.01 HT<br>single pulse single pulse<br>Bee ea<br>Zz5 At Zze ly,<br>0.01 0.01<br>Wu O22 Zan RN Wu M000<br>2 S HS 2<br>= 7 * i) & Cr = ill<br>w BA) | | IM w | FA til<br>- EY ole othe = | ole othe ll<br>° PTA UTM TEIN | ee rete I TI<br>i: 1 2 3 4 5 i: 1 2 3 4<br>pf ri[K/W]: 7.0E-3 0.03736 0.09205 0.12996 0.18355 TT I ri[K/W]: UTTER 0.1879 0.1673 te 0.2007 Sere 0.2441 r<br>τ i[s]: 4.5E-5 1.0E-4 7.2E-4 8.3E-3 0.07425 τ i[s]: 4.8E-5 6.4E-4 7.3E-3 0.07037<br>lh |e | pppoelh |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
Figure 19.
Figure 20.
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
D<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
( _D_ = _t_ p/T)
_**D**_
10
Datasheet
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [489 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
350 6<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>Tvj = 175°C, IF = 50A Tvj = 175°C, IF = 50A<br>300<br>5<br>Oo<br>= 250 “ W<br>4<br>=: ~ ~=g | 4 ——<br>~~<br>>—~ oO<br>200<br>O fe) 3<br>WW O<br>150<br>in 100 2 rs ee<br>ow Ww | |CC<br>| if |<br>1<br>aaa ;<br>50<br>0 0<br>900 1000 1100 1200 1300 1400 1500 900 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 21.
**==> picture [14 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
( V R<br>**----- End of picture text -----**<br>
Figure 22.
**==> picture [14 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
( V R<br>**----- End of picture text -----**<br>
**==> picture [476 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
50 -200<br>Tvj = 25°C, IF = 50A Tvj = 25°C, IF = 50A<br>45 Tvj = 175°C, IF = 50A Tvj = 175°C, IF = 50A<br>-300<br>—<br><x 40 ff ty = J<br>-400<br>35<br>O<br>30 —<br>-500<br>E) + 5 ee ne<br>> 25 T+]:<br>O Ts 2<br>O _— x—<br>-600<br>20<br>15<br>ti> i)(eo) -700 op<br>if . —~<br>10<br>-800<br>Bf {it eS<br>5<br>0 -900<br>900 1000 1100 1200 1300 1400 1500 900 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R =400V, Dynamic test circuit in Figure E) current slope<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
( _V_ R
11
Datasheet
2017-02-09
AIKW50N60CT
## TRENCHSTOP[TM]
**==> picture [474 x 303] intentionally omitted <==**
**----- Start of picture text -----**<br>
150 Ld 2.50<br>Tvj = 25°C / IF = 25A<br>135 Tvj = 175°C / IF = 50A<br>2.25 IF = 100A<br>120<br>2.00<br>= 105 P t<br>/ uw<br>kb i 7 1.75 P| | tt<br>ee<br>90<br>=) e)<br>ef es Fee<br>oQ 75 5 1.50<br>60<br>ee ee eee<br>1.25<br>45<br>eae eee<br>1.00<br>30<br>0.75<br>Ane<br>15<br>pe<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 25. Typical diode forward current as a function Figure 26. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
12
Datasheet
2017-02-09
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Package Drawing PG-TO247-3**
13
V�2.1 2017-02-09
Datasheet
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Testing Conditions**
**==> picture [252 x 588] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
**==> picture [153 x 99] intentionally omitted <==**
**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
**==> picture [7 x 7] intentionally omitted <==**
**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
**==> picture [169 x 63] intentionally omitted <==**
Figure D.
**==> picture [7 x 4] intentionally omitted <==**
**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2017-02-09
Datasheet
AIKW50N60CT
**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Revision�History**
AIKW50N60CT
## **Revision:�2017-02-09,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|
15
V�2.1 2017-02-09
Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →