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AIKW40N65DF5XKSA1
IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 250W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKW40N65DF5 **==> picture [468 x 300] intentionally omitted <==** **----- Start of picture text -----**<br> High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>650V breakdown voltage<br>G<br>Low gate charge Q G<br>E<br>IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>Maximum junction temperature 175°C<br>Dynamically stress tested<br>Qualified according to AEC-Q101<br>Green package (ROHS compliant) rs<br>Complete product spectrum and PSpice Models: Gi,<br>http://www. infineon.com/igbt/ re liteg,<br>Applications:<br>‘d<br>Off-board charger<br>On-board charger<br>DC/DC converter<br>Power-Factor correction 1<br>2<br>3<br>**----- End of picture text -----**<br> ## **Applications:** |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKW40N65DF5|650V|40A|1.6V|175°C|AK40EDF5|PG-TO247-3| Datasheet www.infineon.com 2017-06-30 AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2017-06-30 Datasheet AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||74.0<br>46.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||36.0<br>21.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_C=25°C<br>Powerdissipation_T_C=100°C|_P_tot||250.0<br>125.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,2)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-C)||-|-|0.60|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-C)||-|-|1.80|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Defined by design. Not subject to production test. 2) Package not recommended for surface mount applications 3 V�2.1 2017-06-30 Datasheet AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.55<br>1.53<br>1.49|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|50.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|9|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|95.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|11|-|ns| |Turn-off delaytime|_t_d(off)||-|165|-|ns| |Fall time|_t_f||-|13|-|ns| |Turn-on energy|_E_on||-|0.35|-|mJ| |Turn-off energy|_E_off||-|0.10|-|mJ| |Total switchingenergy|_E_ts||-|0.45|-|mJ| V�2.1 2017-06-30 Datasheet 4 AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|4|-|ns| |Turn-off delaytime|_t_d(off)||-|175|-|ns| |Fall time|_t_f||-|12|-|ns| |Turn-on energy|_E_on||-|0.07|-|mJ| |Turn-off energy|_E_off||-|0.03|-|mJ| |Total switchingenergy|_E_ts||-|0.10|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1230A/µs|-|73|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.54|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|13.7|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-220|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1530A/µs|-|31|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-640|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|12|-|ns| |Turn-off delaytime|_t_d(off)||-|195|-|ns| |Fall time|_t_f||-|5|-|ns| |Turn-on energy|_E_on||-|0.46|-|mJ| |Turn-off energy|_E_off||-|0.16|-|mJ| |Total switchingenergy|_E_ts||-|0.62|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|16|-|ns| |Rise time|_t_r||-|5|-|ns| |Turn-off delaytime|_t_d(off)||-|225|-|ns| |Fall time|_t_f||-|13|-|ns| |Turn-on energy|_E_on||-|0.14|-|mJ| |Turn-off energy|_E_off||-|0.05|-|mJ| |Total switchingenergy|_E_ts||-|0.19|-|mJ| V�2.1 2017-06-30 Datasheet 5 AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1250A/µs|-|98|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.06|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-195|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1330A/µs|-|55|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.55|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|17.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-425|-|A/µs| 6 V�2.1 2017-06-30 Datasheet AIKW40N65DF5 **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 275 80<br>250<br>70<br>225 oy RE<br>60<br>200<br>~ Soe, PN<br>175 50<br>ENG tL<br>150<br>EASES eee<br>40<br>125<br>Popes PK<br>ob EEA<br>100 30<br>= 75 PF<br>EN Tye 20 Pf | UN<br>50<br>Sy EEN<br>10<br>25<br>ee<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 BEE) | ee 120 eee?) ee<br>100 100<br>OA VGE = 20V Le VGE = 20V<br>18V 18V<br>80 80<br>s 15V [VAIO s Ce 15V<br>12V 12V<br>PLAT eo<br>60 10V 60 10V<br>8V 8V<br>qi 8 Sz<br>7V 7V<br>40 40<br>6V 6V<br>5V 5V<br>20 20<br>POACEEEEE) = LO JBeS ===<br>F ——————<br>0 0<br>0 PAS 1 2 3 4 5 = L 0 ESSEE 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Datasheet 7 2017-06-30 ## AIKW40N65DF5 **==> picture [232 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>Tj=25°Cj=25°C=25°C<br>100 P Tj=150°Cj=150°C=150°C TT<br>| ly}<br>ee P o||<br>ee<br>80<br>e ||j<br>ivae j<br>oOBoDBoD peF<br>a 60<br>=e_!<br>_! / /<br>40<br>8--<br>SREP ee<br>/<br>20<br>4 | |<br>PE [[TAY]] [|<br>a2 ceneeneY ceneeneYY<br>0<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> **==> picture [474 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 120 2.50<br>Tj=25°Cj=25°C=25°C IC=10A<br>Tj=150°Cj=150°C=150°C IC=20A<br>2.25 IC=40A<br>100 P TT<br>| ly} s E<br>P z 2.00<br>ee o|| ll<br>ee<br>80<br>1.75<br>ivae ||j _ ===ai<br>oOBoDBoD peF beer——<br>a 60 Ee 1.50<br>-<br>=e_! / / ov= 1.25 a<br>40<br>8-- 2 tt | | |ff<br>SREP ee —! 1.00 ee ee<br>/<br>20<br>0.75<br>4 | |<br>PE [[TAY]] [|<br>a2 ceneeneY ceneeneYY eee<br>0 0.50<br>4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>1| td(off) aa aee ee ee i| td(off) a ee a aee ee<br>I tf p o | tf ee eeee<br>td(on) td(on)<br>tr tr<br>F | he FE baereee eee<br>paw | a ee ee|ee ee | [rPoeT | | | | | |<br>S T<br>z 100 || Tr ?z 100<br>ip) a a ss<br>uw poea a |ip) aSSss es<br>= ee<br>- a a ee = a ee ee ee ee<br>Qz rea eeeeee ae ee ae e e ee aeee ee<br>wae r mre<br>aT 7 oT abe<br>10 10<br>efor se | TE oe<br>- po - a 2 es es ee<br>a Se ae ee ee ee Ca 0<br>AA<br>aa a ee ee ee a a eeee ee<br>ee es a a eeeeee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br> 8 Datasheet 2017-06-30 AIKW40N65DF5 **==> picture [533 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 5.5<br>| 1 td(off) aa ee a a ee ee typ.<br>I tf a ee ee ee eee _ min.<br>I td(on) aee 5.0 SLL max.<br>tr<br><x<br>— FE 4.5 a<br>fe) AL<br>iF 100 a es Q 4.0 S ~<br>ip) a i NO<br>im poa a a (e) mS NS S<br>- es ee Wy 3.5 NS S<br><= -<br>3.0<br>= ee ee ee ~ —™<br>: f —_ a<br>= Te - ~<br>10 2.5<br>7 poa a Ww ~N<br>ee ~<br>a eee e 2.0 ~N<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 1.6<br>Eoff Eoff<br>7 | EEonts / 1.4 | EEonts<br>/<br>—5 £ 6 ‘/ 7£ 1.2 ZYo<br>Ww / Ww LY<br>op) / ) 7<br>(op) 7 io) 7<br>e) 5 e) 1.0 c<br>| / | yY<br>[ag Yo w a a<br>3 4 / 3 0.8 < ea<br>Wl / v4 Ww a “ = -<br>3 0.6<br>LI4<br>-/<br>= 2 7 L 7 S Z a= 0.4 Z Za a<br>7<br>| 1 AP ane 0.2 eee<br>aZone —a<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 9 2017-06-30 AIKW40N65DF5 **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 0.8 1.0<br>Eoff Eoff<br>Eon 0.9 Eon<br>0.7 Ets Ets<br>0.8<br>0.6<br>Lu a wi 0.7 7<br>ip): _ Lec - ~Pf ”: :<br>o 0.5 wen _ —_— o 0.6 “eo Zz<br>> “7 _ —_ > 7 “eo 7 a<br>uw 0.4 — Wi 0.5 aa Za<br>o 7 ~ o<br>0.4<br>Zz 0.3 Zz 27<br>E 0.3<br>; 0.2<br>ee ee 0.2 eee<br>| a —<br>0.1<br>pt pa<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16 1E+4<br>——7 VV CCCC == 520V130V / : HH CCiesoes eT a a<br>14 L M Cres eeee ee<br>5 12 A 1000 |<br>oO — a ee<br><x LL Pses<br>a 10 VA 2 e e<br>fe / W L a A<br>bu 8 i 100 a Oe ee<br>LI=i 6 f\) | —_ cS)oa aaPpeee<br>: 4 /i tf ft | | 10 2SEE eee<br>a es ss ee<br>po<br>2 a eeee<br>0 1<br>0 20 40 60 80 100 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> Figure 15. Typical ( _I_ C=40A) **==> picture [61 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16.<br>( V GE<br>**----- End of picture text -----**<br> 10 Datasheet 2017-06-30 AIKW40N65DF5 **==> picture [475 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>PT ee 1 Pall imilil<br>D = 0.5 D = 0.5<br>iT] aL aN: zal allem ee ee<br>0.2 0.2<br>ge 0.1 0.1 lll (i = Eee 0.1<br>qi ort 7 con iit qi mill nit 1 Ha BSBA emma<br>fallS= SSeSAritaCer aiteeeen 0.050.02 a S 0.1 pULY] 1 Ut 0.050.02<br>a TnZeLe EH Serr Aner te EE<br>= eT 0.01 TT) PIE A ee 0.01 SIE<br>rd ANT| ee ae pou Ss | CT Th<br>uwx PV | Ue ei)lll single pulse EIN oe ertSenerZIMau ENEer TTso single pulse Mill<br>fC Wd aati Lert | eri = Ae yy,<br>6 0.01 Ceet) TTT fF ST LEAH<br>Q Peel e g 0.01 NOWI<br>f Ri Ro ee Ry Ro tii)<br>- EATEAP | eNom oto | AAMAT Mc ie, centers ll<br>AAAI IME LT? TTot oll<br>UUM i: 1 LA 2 CA 3 CAT 4 Fh FTA” DAT EL i: 1 CCC 2 3<br>ri[K/W]: 0.08245484 0.144197 0.2151774 0.1581708 ri[K/W]: 0.6701584 0.775759 0.3540826<br>τ i[s]: 7.3E-5 7.0E-4 0.01235548 0.08020881 τ i[s]: 3.4E-4 4.7E-3 0.04680901<br>fe PTT TTT TT TT |. il a<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 17. IGBT ( _D_ = _t_ p/T) Figure 18. Diode function ( _D_ = _t_ p/T) **==> picture [476 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 130 1.2<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>120<br>DN Ee eee<br>\ sy 1.0 _i-<br>a 110 PT NTT“SS TTT).= LLLpan Reco<br>ef Pee<br>100<br>- _~ 7 =<br>: : sf<br>0.8<br>elx os<br>90<br>sf BE<br>ef<br>in 80 oN fs)<br>0.6<br>70<br>“Sy e Ppp<br>* > pt<br>els A<br>60 ete<br>0.4<br>50<br>40 0.2<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 19. ( _V_ R=400V) Figure 20. ( _V_ R=400V) 11 Datasheet 2017-06-30 AIKW40N65DF5 **==> picture [476 x 667] intentionally omitted <==** **----- Start of picture text -----**<br> 20 0<br>19 Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>18 Fates Tj=150°C, IF = 20A SS -50 eee— Tj=150°C, I —_ F = 20A<br>17<br>-100<br>16<br>fe | tT<br>eenener ener S00000000<br>15<br>Poot A$<br>-150<br>14<br>ie ee <<<br>13<br>| becca |SS<br>-200<br>12<br>6B 11 |47 [te] | SI<br>-250<br>B 10 eoopeerreey€ [ft REE<br>fi<br>ee 9 [Ee1T7Tt_TtrlTTT) -300<br>8<br>7 PP TT} |} | tye -350 TTT TTT yr<br>6 PP | PP ET |<br>5 PE | PP ET | -400 yy TT PT yy ye<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>( function V R=400V) of diode current slope recoveryope as a function of diode<br>( V R=400V)<br>60 2.2<br>Tj=25°C IF=10A<br>E Tj=150°C o] R IF=20A O<br>IF=40A<br>2.0<br>50 eye eae e ee<br>1.8<br>Ss po | | |<br>40<br>“ EF<br>1.6<br>30<br>1.4<br>ce<br>ef #¢ |[e Le<br>20<br>1.2<br>Sy ee<br>ip P| |<br>10 e/a a<br>1.0<br>a 7 ee<br>Fa<br>0 0.8<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I rr<br>I rr<br>/dt<br>rr<br>dI<br>I F V F<br>**----- End of picture text -----**<br> 12 Datasheet 2017-06-30 AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Package Drawing PG-TO247-3** 13 V�2.1 2017-06-30 Datasheet AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2017-06-30 Datasheet AIKW40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Revision�History** AIKW40N65DF5 ## **Revision:�2017-06-30,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2017-06-30|Data sheet created| 15 V�2.1 2017-06-30 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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