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AIKW30N60CTXKSA1
IGBT, 60 A, 1.5 V, 187 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:60A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:187W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 187W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 60A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 3.13 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## AIKW30N60CT
## TRENCHSTOP[TM]
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Low Loss DuoPack: IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery antiparallel Emitter Controlled diode<br>Features: C<br>« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI *<br>« Low gate charge Q G Gi,<br>* Green package reMineo,<br>« Very soft, fast recovery antiparallel Emitter Controlled HE aeier<br>diode<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V rd<br>applications offers: ’ £<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- very high switching speed<br>G<br>C<br>E<br>Applications:<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKW30N60CT|600V|30A|1.5V|175°C|AK30DCT|PG-TO247-3|
Datasheet www.infineon.com
2017-02-09
AIKW30N60CT
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## TRENCHSTOP[TM] �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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## TRENCHSTOP[TM] �Series
## **Maximum�Ratings**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||60.0<br>30.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||90.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||90.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||60.0<br>30.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||187.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
|Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.80|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|1.05|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
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## TRENCHSTOP[TM] �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.05<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=30.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.43mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>750|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|16.7|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1630|-|pF|
|Output capacitance|_C_oes||-|108|-||
|Reverse transfer capacitance|_C_res||-|50|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|167.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|13.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|275|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.6Ω,_R_G(off)=10.6Ω,<br>_L_σ=136nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|254|-|ns|
|Fall time|_t_f||-|46|-|ns|
|Turn-on energy|_E_on||-|0.69|-|mJ|
|Turn-off energy|_E_off||-|0.77|-|mJ|
|Total switchingenergy|_E_ts||-|1.46|-|mJ|
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## TRENCHSTOP[TM] �Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=910A/µs|-|85|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-630|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=30.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=10.6Ω,_R_G(off)=10.6Ω,<br>_L_σ=136nH,_C_σ=39pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|26|-|ns|
|Turn-off delaytime|_t_d(off)||-|292|-|ns|
|Fall time|_t_f||-|90|-|ns|
|Turn-on energy|_E_on||-|1.00|-|mJ|
|Turn-off energy|_E_off||-|1.10|-|mJ|
|Total switchingenergy|_E_ts||-|2.10|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=30.0A,<br>_di_F_/dt_=910A/µs|-|240|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|2.39|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|22.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-320|-|A/µs|
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## ~~Series~~ TRENCHSTOP[TM]
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200 60<br>180<br>50<br>160 TAA Ge<br>140<br>ez XPT 40 PX.<br>120<br>100 30<br>PCONEEO<br>Q a LUN<br>80<br>PFE<br>20<br>60<br>Pe] SPEDE NS<br>oF NU 8 .<br>40<br>PENS 10 EN<br>20<br>eerpeesy LEPTIN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ 15V, T j ≤ 175°C)<br>80 ee VGE=20V15V | ee 80 ee VGE=20V15V oe<br>70 13V 70 13V<br>No {| =<br>11V 11V<br>x 60 SS— 7 LAL < 60 SINSSKPTALAA<br>Bf oNINIM 9V Ys |) BE 9V NN DKS Ue<br>7V 7V<br>3 50 a Oe < 50 e<br>5 40 foNIRA 8 40 INT KO<br>30 30<br>5Se |NXan af NY//) IN<br>20 20<br>PTX P| WIN<br>PN a/ Ane<br>10 10<br>PA PA<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ j=25°C)
Figure 4. Typical ( _T_ j=175°C)
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AIKW30N60CT
## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
70 3.0<br>Tvj = 25°C IC = 15A<br>Tvj = 175°C 2.7 IC = 30A<br>IC = 60A<br>60 i || s =<br>z a<br>fe) 2.4 =<br>< 50 SsE |wae<br>2.1<br>im / <x<br>owi)o 40 js/ Lu2)a 1.8 —— — _—<br>1.5<br>x / = =<br>3 Wan L-t--Tof ||<br>30<br>SERRERY aE 1.2 [| | [| |<br>4 FE<br>re / 7 os |<br>O:- 20 /eye=_ 0.9 | | pt |<br>re)<br>0.6<br>10<br>0.3<br>| Pt | tT ft<br>PA<br>0 0.0<br>| Ee<br>3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
( _V_ GE=15V)
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1000<br>[/_a a a ttd(off)f H1<br>a es td(on) 1<br>tr<br>-—} Sf + + |<br>S e<br>ee ,<br>— 100 a a ee cs<br>on a es<br>uw aa Sea a on<br>= a ee ee ee ee =<br>- a ee<br>g fo<br>s | |fee]ey gf<br>= “ =<br>a 10 Ss es<br>a a a<br>a De De<br>1<br>0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A]<br>t t<br>**----- End of picture text -----**<br>
1000
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| ttd(off)f rr ee ee eee<br>I td(on) rsee<br>tr<br>I rede<br>ee ee ee ee<br>cs<br>on<br>=<br>100<br>gf E S<br>= ee<br>es<br>pene<br>wee<br>10<br>0 10 20 30 40 50<br>R G , GATE RESISTOR [ Ω ]<br>t<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
Figure 7.
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**----- Start of picture text -----**<br>
T j =175°C, V CE=400V,<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, I C =30A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
V GE =0/15V, R G=10 Ω<br>Figure E)<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 aa 7<br>I | ttd(off)f po a ee ee ee typ.min.<br>| td(on) po max.<br>| tr i ee 6<br>——————— 5F 5 TotsSa<br>= 5 4 = oo | ~~<br>©Z 100 OEuwWe ~~ ~~ —<br>= a ><br>3<br>oO po Pe =<br>E a a ae ~<br>= eeee ee ee ee = A<br>a aee ee ee eee 2<br>8<br>Ecoiaprenenpesoo epemessuaesssiaaaes y <x<br>1<br>10 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
Figure 10. Gate-emitter of junction ( _I_ C=0,43mA)=0,43mA)
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V, ( I C=0,43mA)=0,43mA)<br>I C =30A, R G=10 , Dynamic test circuit in<br>Figure E)<br>4.0<br>Eoff Eoff<br>5 E EEonts L LIO)/ 3.5 F EEonts LL :<br>// “<br>Lis e / ia<br>oy Ye<br>nz7 4 | | |/ dzoy 3.0 t tee“<br>Lu / f Ww) oe“<br>(op)eae/ ie) ee7 eee<br>fo} 7 fo} 2.5 .<br>—! 7 aa) a<br>ed ee: -<br>O 3 ©) Le<br>Lu 7 Lu 2.0<br>ZzA/ VA Zz<br>LU 7 Lu a_7<br>Zz 2 / / Zz 1.5 —<br>eo= 7 pee7 L | | |ee——-_<br>EZ/LO E<br>a a ae ae<br>1.0<br>- yo 5 .<br>1<br>a= 0.5<br>eae<br>7 =<br>0 0.0<br>aT | | |<br>0 10 20 30 40 50 60 0 10 20 30 40 50<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =175°C, V CE=400V, (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, R G=10 Ω , Dynamic test circuit in V GE =0/15V, I C =30A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
2.5 3.5<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>3.0<br>2.0<br>= te = a<br>(dp)Ww < oT (dp)Ww 2.5 wa “eo<br>ep) oe ep) -<br>icp) -7 (dp) a<br>—! 1.5 —> _I ied<br>2.0<br>or or Pa<br>Ww Ww L<br>Zz Zz ied<br>OoZz 1.0 ——+4 Zz© 1.5 —eo —<br>S§ ||er [__—_T] + [8] e 1.0 bea<br>0.5<br>0.5<br>0.0 0.0<br>25 50 75 100 125 150 175 300 350 400 450 500 550 600<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=0/15V,<br>I C =30A, R G=10 , Dynamic test circuit<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 14.
(inductive load, _T_ j =175°C, _V_ GE=0/15V, _I_ C =30A, _R_ G=10 , Dynamic test circuit Figure E)
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**----- Start of picture text -----**<br>
20<br>o V CC v<br>18 V CC<br>THY<br>>— 16 / J/<br>14 A__4<br>3)<br>< Jf<br>12<br>ag: Vay<br>bu 10 L<br>FE<br>= /<br>= 8 ———<br>é 6<br>4<br>2<br>0<br>0 20 40 60 80 100 120 140 160 180 200<br>Q GE , GATE CHARGE [nC]<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=30A)
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**----- Start of picture text -----**<br>
[-—_— Cies _ |<br>Coes<br>Cres<br>1E+4<br>== -+-—+—-+ 4+—<br>Ee [E] [d]<br>—————— a se<br>ee<br>es<br>os a<br>1000<br>gx Ca a<br>i Ds<br>Oo Oa<br>a a<br>a. a<br>Ne\ i ee<br>100<br>ee<br>a te Ps ee<br>aa<br>aes es ee es<br>ee ee ee ee ee ee<br>10<br>0 5 10 15 20 25 30<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>**----- End of picture text -----**<br>
Figure 16.
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
500 14<br>z {tt tt tf 12 Pi ty | | tT TT Tt<br>ee 400 ROO<br>a Ww N<br>& / 2 10 |<br>3 Pn<br>4 F NO<br>py PK<br>Ee 300 Z| E<br>5:7ee 8 eee<br>=<br>fe). Z e= {tt}Py TN<br>tT<br>5 4 e 6 | TK<br>=) 200 ZL O3 SN<br>8 , a<br>—— Oo<br>keaa ~ 4 | ti] | | |i | | fl<br>ao oO<br>=pt op) fe<br>100<br>2<br>EPP EEE<br>0 0<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function of<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE AOOV, start at T j 150°C) ( V CE =400V, start at T j =25°C, T jmax ≤ 150°C)<br>1<br>Fo<br>sc<br>1<br>= Sc | Seti eemaii teatematical<br>= a aS Sa S eo CHIE Cert<br>rs)= PETTITTTTT TT = FT SS<br>aan FH et a WW a ee aa<br>ra) 0.1 nNVall) 7 Amant0 NS TA ra)a Vi)<br>D = 0.5 D = 0.5<br>0.2 0.1 0.2<br>= Cote sn Sees eemesitiiesmey | Somsen ieee Ee<br>Zz7< |ay AT7/000a | 0.10.050.02 1)WT|aTM OU FHCAaAee 0.10.050.02 SC<br>= A Ae 2 = CHM<br>0.01 0.01<br>single pulse single pulse<br>FYUVA Soa Hl) Hieten<br>5 L +7 / lima F HeAer<br>0.01<br>Le a a<br>0.01<br>zZf f iali<br>eeF H ATEOCT H U roy}Hi) &2 feaFCCeet eaGes ReTilti<br>- eeA HI Cy=h/Ry Co=fe/Ro He- EMECFANf} ena Cy=h,/Rycle, Co=fe/Rocalles I<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.05279 0.19382 0.25779 0.29566 ri[K/W]: 0.22545 0.31252 0.26773 0.19517<br>[open τ i[s]: 6.5E-5 4.7E-4 6.1E-3 0.06478 | eee τ i[s]: 2.2E-4 2.3E-3 | 0.01546 0.1079<br>le | Nh |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
Figure 19.
Figure 20.
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D<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
_**D**_
( _D_ = _t_ p/T)
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## TRENCHSTOP[TM]
**==> picture [490 x 285] intentionally omitted <==**
**----- Start of picture text -----**<br>
300 eS es 3.0 ee<br>Tvj = 25°C, IF = 30A Tvj = 25°C, IF = 30A<br>™~ Tvj = 175°C, IF = 30A Tvj = 175°C, IF = 30A<br>250 ™~ | | | 2 2.5 | |<br>— ~~. a — _<br>n —~ —<br>= i ae Lu<br>uw O<br>> 200 g 2.0<br>==<br>> oO<br>fe):O 150 TELL ELE >éO 1.5 TEL PELE<br>4<br>7) ia<br>x uw<br>wi 100 TELL ELE 1.0 TEL PELE<br>owv =a ifwe =o —<br>| a ° TT<br>50 0.5<br>0 0.0<br>700 750 800 850 900 950 1000 1050 1100 700 750 800 850 900 950 1000 1050 1100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 21.
( _V_ R
Figure 22.
( _V_ R
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**----- Start of picture text -----**<br>
30 0<br>Tvj = 25°C, IF = 30A Tvj = 25°C, IF = 30A<br>Tvj = 175°C, IF = 30A Tvj = 175°C, IF = 30A<br>-100<br>ae<br>25<br><= _<br>ef po r es -200 |]<br>ef-s—_>7<br>20<br>ow S<br>oOx re)ic -300 _ ta _—<br>pe Ppa bee<br>15 -400<br>O x<br>Ww oO<br>ge fi | | | | | ty<br>aw 8<br>-500<br>7p) 10 se]<br>orw | | | | || | idea)<br>uwPppse) -600<br>ye<br>5<br>By Ea<br>-700<br>0 -800<br>700 750 800 850 900 950 1000 1050 1100 700 750 800 850 900 950 1000 1050 1100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
> ( _V_ R
( _V_ R
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## TRENCHSTOP[TM]
**==> picture [474 x 286] intentionally omitted <==**
**----- Start of picture text -----**<br>
80 Ld / 2.50<br>Tvj = 25°C IF = 15A<br>70 Tvj | = 175°C / 2.25 IIFF = 30A = 60A<br>/ |<br>/<br>60 2.00<br>Paim= 50 P| Le Ww7<x©) 1.75 P| | tt<br>a)<br>: P| LP : ee<br>40 1.50<br>a<br>30 1.25<br>20 1.00<br>10 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
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**==> picture [86 x 38] intentionally omitted <==**
## TRENCHSTOP[TM] �Series
## **Package Drawing PG-TO247-3**
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## TRENCHSTOP[TM] �Series
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �Series
## **Revision�History**
AIKW30N60CT
## **Revision:�2017-02-09,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|
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Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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