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AIKW20N60CTXKSA1
IGBT, 40 A, 1.5 V, 166 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 166W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.33 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [469 x 304] intentionally omitted <==** **----- Start of picture text -----**<br> Low Loss DuoPack: IGBT in TRENCHSTOP TM and Fieldstop technology<br>with soft, fast recovery antiparallel Emitter Controlled diode<br>Features: C<br>« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI *<br>« Low gate charge Q G Gi,<br>* Green package reMineo,<br>« Very soft, fast recovery antiparallel Emitter Controlled HE aeier<br>diode<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V rd<br>applications offers: ’ £<br>- very tight parameter distribution<br>- high ruggedness, temperature stable behavior<br>- very high switching speed<br>G<br>C<br>E<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKW20N60CT|600V|20A|1.5V|175°C|AK20DCT|PG-TO247-3| Datasheet www.infineon.com 2017-02-09 AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2017-02-09 Datasheet AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Maximum�Ratings** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||60.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=100°C|_I_F||40.0<br>20.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_C=25°C|_P_tot||166.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| |Mounting torque, M3 screw<br>Maximum of mounting processes: 3|_M_||0.6|Nm| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.90|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|1.50|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.1 2017-02-09 Datasheet AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.05<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.29mA,_V_CE=_V_GE|4.1|4.9|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>550|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|11.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1100|-|pF| |Output capacitance|_C_oes||-|71|-|| |Reverse transfer capacitance|_C_res||-|32|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|120.0|-|nC| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|14|-|ns| |Turn-off delaytime|_t_d(off)||-|199|-|ns| |Fall time|_t_f||-|42|-|ns| |Turn-on energy|_E_on||-|0.31|-|mJ| |Turn-off energy|_E_off||-|0.46|-|mJ| |Total switchingenergy|_E_ts||-|0.77|-|mJ| V�2.1 2017-02-09 Datasheet 4 AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=880A/µs|-|41|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.31|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|13.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-711|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns| |Rise time|_t_r||-|18|-|ns| |Turn-off delaytime|_t_d(off)||-|223|-|ns| |Fall time|_t_f||-|76|-|ns| |Turn-on energy|_E_on||-|0.51|-|mJ| |Turn-off energy|_E_off||-|0.64|-|mJ| |Total switchingenergy|_E_ts||-|1.15|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=880A/µs|-|176|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.46|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|18.9|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-467|-|A/µs| V�2.1 2017-02-09 Datasheet 5 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 180 35<br>160<br>30<br>140<br>NCEE 25 ANKE<br>>| 120 \LLE Je<br>20<br>POND 100 LIN<br>PLN 80 te PN<br>15<br>60<br>PEN 10 PN<br>ne ,<br>40<br>5<br>HEPA be<br>20<br>0 PTT PN 0 ELL ELA<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C T C<br>Figure 1. Figure 2.<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ T j ≤ 175°C)<br>60 60<br>VGE=20V VGE=20V<br>15V 15V<br>50 13V 50 13V<br>11V 11V<br>P| 40 | 9V NOVA]: 40 PRS 9V ERY— /<br>7V 7V<br>a A NNY/ fl SOU pa<br>30 30<br>20 20<br>SEEN) Camtennny ene<br>10 10<br>PF (LA<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5<br>V CE V CE<br>Figure 3. Figure 4.<br>( T j=25°C) ( T j=175°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> 6 Datasheet 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [484 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 40 3.0<br>Tvj = 25°C IC = 10A<br>Tvj = 175°C 2.7 IC = 20A<br>35 IC = 40A<br>a Ss _ a<br>2.4<br>30 7<br><= / / Eber]e 2.1 aan<br>ll | |<br>Eb / =<br>i 25 [_/ <<br>ad 79) 1.8 __<br>oe / ar ——<br>: 20 Bear 1.5<br>:<br>1.2<br>15<br>;<br>0.9<br>O [-] 10 PL ttt Ad. a [_]<br>ee<br>0.6<br>PLE re) ee<br>5<br>ALL eee<br>0.3<br>0 0.0<br>Py tt } EE<br>2 3 4 5 6 7 8 9 10 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>ee ee ee ee td(off) — H td(off) ae<br>a — a tf = | tf i ee eeeee<br>td(on) td(on)<br>————HPfp dt tr |=| |I a tr i a a e eer eee<br>e e ee<br>— 100 a cs<br>uwon Ss a aed|a ee eee on<br>--<br>ga g 100 ———————EE<br>a ee ee eeee<br>Ee Ee a a Se<br>= = a eS ae ee ee ee<br>a 10 Oa se<br>iaraance aSee eeTEEee eeae ae<br>1 10<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br> Figure 7. **==> picture [149 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, r G=12 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 8. Typical **resistor** **==> picture [184 x 31] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, I C =20A, Dynamic test<br>7 Figure E)<br>**----- End of picture text -----**<br> Datasheet 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 7<br>I | ttd(off)f po a ee ee ee typ.min.<br>| td(on) po max.<br>| tr i ee 6<br>ee 5 ee<br>ee = > ~<br>p s p 5 4 NS= oo | ~~<br>3 100<br>Z<br>= a = ~~<br>oO a ee 3 ><br>i poa ee Pe —<br>= eeeee eeeee ~ “A<br>a acee ee eeee es eee 2<br>| | | | | cd] <xdf 1<br>10 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. Figure 10. **==> picture [475 x 330] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=0/15V, ( I C=0,29mA)<br>I C =20A, r G=12 , Dynamic test circuit in<br>Figure E)<br>2.80 2.8<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>a 2.40 / a 2.4 “O va<br>5 / 5 7<br>E / E wa<br>(op) 2.00 / op) 2.0 “eo<br>Lu 7 Lu<br>7) / 7) 7<br>7p) / 7p) YY<br>aa) y; aa) 7<br>> 1.60 Zz > 1.6 S 7<br>Lu 7 uu 7<br>Zz / Zz “<br>Ww: TELL.7 LU: Eeanneo -<br>1.20 1.2<br>oO<br>o 7“ o<br>0.80 0.8<br>= 5 7 L Zo = —— > an<br>/ AE -<br>0.40 0.4<br>Z —_<br>/<br>7<br>ae<br>0.00 0.0<br>0 5 10 15 20 25 30 35 40 0.0 12.5 25.0 37.5 50.0 62.5 75.0<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>E E<br>**----- End of picture text -----**<br> Figure 11. **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> **==> picture [149 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, r G=12 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 12. **==> picture [149 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =0/15V, I C =20A, Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 8 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2<br>Eoff<br>Eon<br>Ets<br>1.0<br>ae<br>= =<br>Lu _—<br>icp)77) 0.8 “7 - 7 pf<br>e)<br>a<br>><br>0.6<br>Zz —_— —<br>0.4<br>i —_— — —_<br>O —<br>0.2<br>0.0<br>25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>E<br>**----- End of picture text -----**<br> Figure 13. (inductive load, _V_ CE =400V, _V_ GE=0/15V, _I_ C =20A, _r_ G=12 , Dynamic test circuit in Figure E) **==> picture [233 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00<br>Eoff<br>Eon<br>1.75 Ets<br>= a<br>1.50 yt | | je<br>LU Ye<br>77) uw :<br>(dp) a<br>e) 1.25<br>a va<br>> oo<br>1.00<br>= 0.75 —<br>FE _— —<br>O = -<br>0.50<br>0.25<br>0.00<br>300 350 400 450 500 550 600<br>V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E<br>**----- End of picture text -----**<br> Figure 14. (inductive load, _T_ j =175°C, _V_ GE=0/15V, _I_ C =20A, _R_ G=12 , Dynamic test circuit Figure E) **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>T V r CC inv [— C “_ ies | | |<br>18 V CC Coes<br>Cres<br>/ 1E+4<br>16 T E T / / == a SLS-+-—+—-+es ES 4+—<br>—S /yA) Ee aa [Et] ass<br>14<br>3) Z a<br>F 2<br>12<br>1000<br>or we KT |<br>im 10 / / 2 Eo<br>E= / Z EeOo a<br>= 8 esY_/ aa. COa ss<br>xt . PON<br>6<br>100<br>[|<br>4 a<br>a ia ee ee<br>2 a<br>0 10<br>0 20 40 60 80 100 120 140 160 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=20A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [471 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 350 14<br><x 300 TELL LL 12 LEE ELLE<br>z=) 250 4 2- 10 >aN<br>rs) 7<br>G 200 Z <x© 8 aN :<br>re) =<br>2 150 Yi : 6 N<br>EKO5 7 / oa5O NS~<br>o oO<br>iaE 100 orO 4<br>= op)<br>Yn -<br>PET 50 TELE Le 2 PELL ELE<br>0 0<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 4OOV, start at T j 150°C) ( V CE =400V, start at T j =25°C, T jmax ≤ 150°C)<br>I C(SC) t SC<br>**----- End of picture text -----**<br> **==> picture [475 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>en ee oe Tm<br>eI eT a0 lll<br>1<br>. SSeS TH _EHBRCE ESStree<br>= CTT) «= GEES RSE ee ed<br>=, ne AY N LY<br>WW2: TINa aareTRZTINed a WWx2 ConTITCICSCooeVTTTTTTTil<br>a 0.1 RAIN 2 An<br>2 TTSSaA ml D = 0.5 S$ CCN D = 0.5<br>= 0.2 Se 0.1 CMe aN 0.2<br>— SSeS ES SC<br>0.1 0.1<br>Z / iim mn. 0.05 — ae } —— el S ~ 0.05<br>2 sonnet8/2 0.02 | A 0.02<br>NL At 0.01 MN = oI ES 0.01 CE<br>single pulse single pulse<br>FBE 2 CMrail) ST | it— A C<br>z cE a an<br>k II)zal/ zF Al |<br>0.01<br>| A<br>0.01<br>z< PCCDW Ry Ro--f zSs O_oFRA Rs Ro~- tn}|<br>ia<br>. / CIR, CaxtelRs . CZ<br>ee/ | CO cs Vie, cotter Il<br>BA A et ETI T TI TUT i l<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.07041 0.30709 0.3199 0.18715 ri[K/W]: 0.33997 0.44456 0.58146 0.13483<br>/ REA A AE τ i[s]: 9.6E-5 i 6.8E-4 0.01085 0.06925 | τ i[s]: 1.3E-4 CCoMIE 1.5E-3 0.01821 THE 0.09207 TH<br>ll po| TTCT CTE TAME |—_— CCT CC<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> Figure 19. Figure 20. **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>**----- End of picture text -----**<br> ( _D_ = _t_ p/T) ( _D_ = _t_ p/T) _**D**_ 10 Datasheet 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [476 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 300 2.0<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A 1.8 Tvj = 175°C, IF = 20A<br>250 T F<br>_ 1.6 |.Ll<br>Lu \ O 1.4<br>-F 200 \ x<br>1.2<br>> \<br>150 1.0<br>~~L-}+"| f<br>uw ~ Lu 0.8<br>uw 100 x<br>a uw 0.6<br>is ==<br>a 0.4 —<br>50<br>nin _|<br>0.2<br>p= pb<br>a a<br>0 0.0<br>rE Et Ey<br>600 700 800 900 1000 1100 1200 1300 1400 1500 600 700 800 900 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R =400V,Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> **==> picture [476 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 175°C, IF = 20A -100 Tvj = 175°C, IF = 20A<br>25<br>- -200<br>< El | PTET E T EL<br>5 - =a =eee<br>a ] [ao] -300<br>20<br>a = -400 N<br>O Trey s NEE ETE<br>Lu a me ~ _ _ _<br>15 -500<br>f fer cE} KI SRED Pt<br>O x<br>fe) = o \<br>iard a3 -600 \ 4<br>BT 10 g ~<br>-700<br>><br>-800<br>5<br>-900<br>0 -1000<br>600 700 800 900 1000 1100 1200 1300 1400 1500 600 700 800 900 1000 1100 1200 1300 1400 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> Figure 23. Figure 24. ( _V_ R ( _V_ R 11 Datasheet 2017-02-09 AIKW20N60CT ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 60 Ld 1 2.50<br>Tvj = 25°C / IF = 10A<br>Tvj = 175°C / IF = 20A<br>2.25 IF = 40A<br>50<br>2.00<br>5 40 Ww<br>= Ean fi 7 1.75 P| | tt<br>w / / o)<br>oe / :<br>a) / 3<br>OoQ 30 | a 1.50<br>1.25<br>20<br>/ 1.00<br>10<br>0.75<br>a<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 25. Figure 26. 12 Datasheet 2017-02-09 AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Package Drawing PG-TO247-3** 13 V�2.1 2017-02-09 Datasheet AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2017-02-09 Datasheet AIKW20N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Revision�History** AIKW20N60CT ## **Revision:�2017-02-09,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2017-02-09|Data sheet created| 15 V�2.1 2017-02-09 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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