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AIKQB120N75CP2ALSA1
IGBT, AEC-Q101, 150 A, 1.3 V, 577 W, 750 V, TO-247 Plus, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 577W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247 Plus
- Operating Temperature Max: 175°C
- Continuous Collector Current: 150A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Saturation Voltage: 1.3V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.65 € |
| Current stock | 50+ |
| Lead time | 30 days |
Datasheet
**AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** ## **Preliminary datasheet** **Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package co-packed with soft and fast recovery diode** ## **Features** - VCE = 750 V - IC = 120 A - Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems - Very low VCEsat = 1.3 V (typ.) at ICnom = 120 A, 25°C - Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V - Up to 40% less System Rth due to reflow capability, increased power output - Self limiting current under short circuit condition - Positive thermal coefficient and very tight parameter distribution for easy paralleling - Reduction of number of paralleled devices required - Excellent current sharing in parallel operation - Smooth switching characteristics - Low gate charge QG - Simple gate drive design - Co-packed with fast soft recovery emitter controlled 3 diode - Low EMI signature - TO247PLUS package with high creepage distance - High reliability and operating lifetime - Resistive weldable pins for direct busbar connections - Drop-in replacement for IC = 120 A, Tc = 100°C devices ## **Potential applications** - xEV traction inverter - DC-link discharge switch - Automotive aux-drives ## **Product validation** - Qualified for automotive applications. Product Validation according to AEC-Q101 - Qualified Reflow device according to JEDEC J-STA-020 MSL2 ## **Description** |||||||C|C||| |---|---|---|---|---|---|---|---|---|---| ||||||||||| ||||||||||| ||||||||||| ||||||||||| ||||||||||| |||G|||||||| |||||||E|||| ||||||||||| ||||||||||| ||**Type**|**Package**|||||||**Marking**| |AIKQB120N75CP2||PG-TO247-3-PLUS-NN8.5|||||||AKQB12FCP| Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 0.20 2024-02-21 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** **Table of contents** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 0.20 2024-02-21 2 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in.) from case|_L_E||||13||nH| |Storage temperature|_T_stg|||-55||150|°C| |Soldering temperature|_T_sold|reflow soldering (MSL2 according to JEDEC<br>J-STA-020)||||260|°C| |Thermal resistance,<br>junction-ambient|_R_th(j-a)|||||40|K/W| |IGBT thermal resistance,<br>junction-case|_R_th(j-c)||||0.2|0.26|K/W| |Diode thermal resistance,<br>junction-case|_R_th(j-c)||||0.35|0.45|K/W| ## **2 IGBT** |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|_T_vj≥ 25 °C||750|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|150|A| ||||_T_c= 100 °C|120|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||360|A| |Turn-of safe operating<br>area||_V_CE≤ 750 V,_T_vj≤ 175 °C||360|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p= 10 µs,_D_< 0.01||±30|V| |Short-circuit withstand<br>time|_t_SC|_V_CC≤ 470 V,_V_GE= -8/15 V, Allowed number<br>of short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 25 °C||5|µs| |Power dissipation|_P_tot|_T_vj= 175 °C|_T_c= 25 °C|577|W| ||||_T_c= 100 °C|288|| Datasheet Revision 0.20 2024-02-21 3 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** ## **Characteristic values** ||||||||| |---|---|---|---|---|---|---|---| |**Table 3**<br>**Characteristic values**|||||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 120 A,_V_GE= 15 V|_T_vj= 25 °C||1.3|1.65|V| ||||_T_vj= 175 °C||1.6||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 1.6 mA, VCE= VGE||5|5.75|6.5|V| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 750 V,_V_GE= 0 V|_T_vj= 25 °C|||200|µA| ||||_T_vj= 175 °C||4||mA| |Gate-emitter leakage<br>current|_I_GES|_V_CE= 0 V,_V_GE= 20 V||||100|nA| |Transconductance|_g_fs|_I_C= 120 A,_V_CE= 20 V|||90||S| |Short-circuit collector<br>current|_I_SC|_V_CC≤ 470 V,_V_GE= -8/15 V,_t_SC≤ 5 µs, Allowed<br>number of short circuits < 1000, Time<br>between short circuits ≥ 1.0 s,_T_vj= 25 °C|||750||A| |Input capacitance|_C_ies|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||13125||pF| |Output capacitance|_C_oes|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||337||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE= 25 V,_V_GE= 0 V,_f_= 100 kHz|||59||pF| |Gate charge|_Q_G|_V_CC= 600 V,_I_C= 120 A,_V_GE= -8/15 V|||731||nC| |Turn-on delay time|_t_d(on)|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||71||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||50||| |Rise time (inductive load)|_t_r|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||69||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||68||| |Turn-of delay time|_t_d(of)|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||244||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||226||| |Fall time (inductive load)|_t_f|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||50.5||ns| ||||_T_vj= 175 °C,<br>_I_C= 120 A||67||| |Turn-on energy_1)_|_E_on|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||6.82||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||7.3||| ## **(table continues...)** Datasheet Revision 0.20 2024-02-21 4 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Turn-of energy|_E_of|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||3.8||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||4.7||| |Total switching energy|_E_ts|_V_CC= 470 V,_V_GE= -8/15 V,<br>_R_G(on)= 5 Ω,_R_G(of)= 5 Ω|_T_vj= 25 °C,<br>_I_C= 120 A||10.3||mJ| ||||_T_vj= 175 °C,<br>_I_C= 120 A||12.1||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| _1)_ includes reverse recovery losses ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**||||| |---|---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**|**Unit**| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_c= 25 °C||150|A| ||||_T_c= 100 °C||120|| |Diode pulsed current, tp<br>limited by Tvjmax|_I_Fpulse||||360|A| |Power dissipation|_P_tot|_T_vj= 175 °C|_T_c= 25 °C||333|W| ||||_T_c= 100 °C||167|| **Table 5 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 120 A|_T_vj= 25 °C||1.72|2|V| ||||_T_vj= 175 °C||1.9||| |Diode reverse recovery<br>charge|_Q_rr|_V_R= 470 V|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1055 A/µs||3.6||µC| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1070 A/µs||5.3||| **(table continues...)** Datasheet Revision 0.20 2024-02-21 5 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **3 Diode** |**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**|||**Values**||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak reverse<br>recovery current|_I_rrm|_V_R= 470 V|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1055 A/µs||33||A| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1070 A/µs||43||| |Reverse recovery energy|_E_rec|_V_R= 470 V,_L_σ= 50 nH,<br>_C_σ= 30 pF|_T_vj= 25 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1055 A/µs||1.2||mJ| ||||_T_vj= 175 °C,<br>_I_F= 120 A,<br>_-di_F_/dt_= 1070 A/µs||1.6||| |Operating junction<br>temperature|_T_vj|||-40||175|°C| ## _**Note** :_ _For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet._ _Electrical Characteristic at T_ vj _= 25°C, unless otherwise specified._ _Dynamic test circuit, parasitic inductance L_ σ _= 50 nH, parasitic capacitor C_ σ _= 30 pF from Fig. E. Energy losses include “tail” and diode reverse recovery._ Datasheet Revision 0.20 2024-02-21 6 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **4 Characteristics diagrams** **==> picture [540 x 622] intentionally omitted <==** **----- Start of picture text -----**<br> Power dissipation as a function of case temperature Collector current as a function of case temperature<br>Ptot = f(Tc) IC = f(Tc)<br>Tvj ≤ 175 °C Tvj ≤ 175 °C, VGE = 15 V<br>600 160<br>140<br>550<br>120<br>500<br>100<br>450<br>80<br>400<br>60<br>350<br>40<br>300<br>20<br>250 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Typical output characteristic Typical output characteristic<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = 175 °C<br>vj vj<br>450 450<br>400 400<br>350 350<br>300 300<br>250 250<br>200 200<br>150 150<br>100 100<br>50 50<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 7 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical transfer characteristic** ## IC = f(VGE) ## VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 5 10 15<br>**----- End of picture text -----**<br> ## **Gate-emitter threshold voltage as a function of junction temperature** VGEth = f(Tvj) IC = 1.6 mA **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 6.5<br>6.0<br>5.5<br>5.0<br>4.5<br>4.0<br>3.5<br>-40 -20 0 20 40 60 80 100 120 140 160<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>0.50<br>-40 -20 0 20 40 60 80 100 120 140 160 180<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current** t = f(IC) VCC = 470 V, Tvj = 175 °C, VGE = -8/15 V, RG = 5 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 450<br>400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 50 100 150 200 250<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 8 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching times as a function of gate resistor** t = f(RG) IC = 120 A, VCC = 470 V, Tvj = 175 °C, VGE = -8/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current** E = f(IC) VCC = 470 V, Tvj = 175 °C, VGE = -8/15 V, RG = 5 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 35<br>30<br>25<br>20<br>15<br>10<br>5<br>0<br>0 50 100 150 200 250<br>**----- End of picture text -----**<br> **Typical switching times as a function of junction temperature** t = f(Tvj) IC = 120 A, VCC = 470 V, VGE = -8/15 V, RG = 5 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor** E = f(RG) IC = 120 A, VCC = 470 V, Tvj = 175 °C, VGE = -8/15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 25<br>20<br>15<br>10<br>5<br>0<br>0 5 10 15 20 25 30 35 40<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 9 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical switching energy losses as a function of junction temperature** E = f(Tvj) ## IC = 120 A, VCC = 470 V, VGE = -8/15 V, RG = 5 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical gate charge** VGE = f(QG) IC = 120 A ## **Typical switching energy losses as a function of collector emitter voltage** E = f(VCE) IC = 120 A, Tvj = 175 °C, VGE = -8/15 V, RG = 5 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>200 250 300 350 400 450 500<br>**----- End of picture text -----**<br> ## **Typical capacitance as a function of collector-emitter voltage** C = f(VCE) f = 100 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>10<br>5<br>0<br>0 100 200 300 400 500<br>**----- End of picture text -----**<br> **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 10 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical short circuit collector current as a function of gate-emitter voltage** ## IC(SC) = f(VGE) ## Tvj ≤ 175 °C, VCC ≤ 470 V ## **Short circuit withstand time as a function of gateemitter voltage** tSC = f(VGE) Tvj ≤ 175 °C, VCC ≤ 470 V **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 1400 10<br>1200<br>9<br>1000<br>8<br>800<br>7<br>600<br>6<br>400<br>200 5<br>10 11 12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>IGBT transient thermal impedance as a function of Diode transient thermal impedance as a function of<br>pulse width pulse width<br>Zth(j-c) = f(tp) Zth(j-c) = f(tp)<br>D = tp/T D = tp/T<br>1 1<br>0.1<br>0.1<br>0.01<br>0.01<br>0.001<br>0.0001 0.001<br>1E-6 1E-5 0.0001 0.001 0.01 0.1 1 1E-6 1E-5 0.0001 0.001 0.01 0.1 1<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 11 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical diode forward current as a function of forward voltage** IF = f(VF) **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 400<br>350<br>300<br>250<br>200<br>150<br>100<br>50<br>0<br>0 1 2 3 4<br>**----- End of picture text -----**<br> **Typical reverse recovery time as a function of diode current slope** trr = f(diF/dt) VR = 470 V, IF = 120 A ## **Typical diode forward voltage as a function of junction temperature** VF = f(Tvj) **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.00<br>1.75<br>1.50<br>1.25<br>1.00<br>0.75<br>-40 -20 0 20 40 60 80 100 120 140 160 180<br>**----- End of picture text -----**<br> **Typical reverse recovery charge as a function of diode current slope** Qrr = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [540 x 262] intentionally omitted <==** **----- Start of picture text -----**<br> 450 6.0<br>400<br>5.0<br>350<br>300 4.0<br>250<br>3.0<br>200<br>150 2.0<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 12 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** ## **Typical reverse recovery current as a function of diode current slope** Irrm = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 45<br>40<br>35<br>30<br>25<br>20<br>15<br>500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> **Typical diode peak rate of fall of reverse recovery current as a function of diode current slope** dirr/dt = f(diF/dt) VR = 470 V, IF = 120 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> -50<br>-100<br>-150<br>-200<br>-250<br>-300<br>-350<br>500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> ## **Typical reverse energy losses as a function of diode current slope** Erec = f(diF/dt) VR = V, IF = 120 A **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> Datasheet Revision 0.20 2024-02-21 13 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **PG-TO247-3-PLUS-NN8.5** |**DIMENSIONS**<br>PACKAGE - GRO<br>NUMBER:<br>**b**<br>**D**<br>**c**<br>**E**<br>**L**<br>**L1**<br>**D1**<br>**A**<br>**A1**<br>**b2**<br>**E1**<br>**b1**<br>**E2**<br>**b3**<br>**E3**<br>**E4**<br>**e**<br>**N**<br>**H**<br>**aaa**|**PG-TO247-3-U02**<br>UP|**PG-TO247-3-U02**<br>UP| |---|---|---| ||MIN.<br>MAX.<br>**MILLIMETERS**|| |||MAX.| ||4.70|4.90| ||2.16|2.66| ||1.10|1.30| ||1.80|| ||2.00|| ||0.00|0.15| ||0.50|0.70| ||22.70|22.90| ||14.69|14.89| ||15.70|15.90| ||0.76|0.96| ||3.08|3.28| ||3.84|4.04| ||12.28|12.48| ||5.44|| ||3|| ||1.30|1.50| ||18.01|18.21| ||2.34|2.54| ||0.25|| ## **Figure 1** Datasheet Revision 0.20 2024-02-21 14 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** **6 Testing conditions** **==> picture [185 x 14] intentionally omitted <==** **----- Start of picture text -----**<br> 6 Testing conditions<br>**----- End of picture text -----**<br> **==> picture [502 x 613] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V C C<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 0.20 2024-02-21 15 **AIKQB120N75CP2 Short circuit rugged 750 V EDT2 IGBT in reflow-solderable package** **==> picture [105 x 47] intentionally omitted <==** **Revision history** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |0.10|2023-02-21|Target datasheet| |0.20|2024-02-21|Preliminary datasheet| Datasheet Revision 0.20 2024-02-21 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2024-02-21 Important notice Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2024 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. **Do you have a question about any aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-ABC787-002** Infineon Technologies in customer’s applications. ## **Warnings** Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application.
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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