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AIKQ200N75CP2XKSA1
IGBT, EDT2, 200 A, 1.3 V, 1.071 kW, 750 V, TO-247 Plus, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 1.071kW
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247 Plus
- Operating Temperature Max: 175°C
- Continuous Collector Current: 200A
- Collector Emitter Voltage Max: 750V
- Collector Emitter Saturation Voltage: 1.3V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 5.74 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**AIKQ200N75CP2 EDT2 IGBT** ## **EDT2 IGBT and emitter controlled diode in TO247PLUS package** ## **Features** - VCE = 750 V - IC = 200 A - Best-in-class highest power density, IC = 200 A - 750 V collector-emitter blocking voltage capability - Suitable for 470 V VDC systems and increase overvoltage margin for 400 V VDC systems - Very low VCE(sat), 1.30 V at ICnom = 200 A, 25°C - Short circuit robust tsc = 5 µs at VCE = 470 V, VGE = 15 V - Self limiting current under short circuit condition - Positive thermal coefficient and very tight parameter distribution for easy paralleling - A Reduced number of parallel devices is required due to Inom = 200 A - Excellent current sharing in parallel operation - Smooth switching characteristics, low EMI signature - Low gate charge QG - Simple gate drive design - Co-packed with fast soft recovery emitter controlled 3 diode - TO247PLUS package with high creepage distance - High reliability ## **Potential applications** - xEV Inverter - DC-link discharge switch - Automotive aux-drives ## **Product validation** - Qualified for automotive applications - Qualified according to AEC-Q101 ## **Description** C G E **Type Package Marking** AIKQ200N75CP2 PG-TO247PLUS-3 AKQ20FCP ~~———~~ Please read the sections "Important notice" and "Warnings" at the end of this document Datasheet www.infineon.com Revision 1.00 2022-02-16 **AIKQ200N75CP2 EDT2 IGBT** **Table of contents** **==> picture [105 x 47] intentionally omitted <==** ## **Table of contents** ||**Description**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| |---|---| ||**Features**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1| ||**Potential applications**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Product validation**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1| ||**Table of contents**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| |**1**|**Package**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| |**2**|**IGBT**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3| |**3**|**Diode**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5| |**4**|**Characteristics diagrams**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7| |**5**|**Package outlines**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14| |**6**|**Testing conditions**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15| ||**Revision history**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16| ||**Disclaimer**. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17| Datasheet Revision 1.00 2022-02-16 2 **AIKQ200N75CP2 EDT2 IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **1 Package** ## **1 Package** |**1**<br>**Package**|**1**<br>**Package**|**1**<br>**Package**||||| |---|---|---|---|---|---|---| |**Table 1**<br>**Characteristic values**||||||| |**Parameter**|**Symbol**|**Note or test condition**|**Values**|||**Unit**| ||||**Min.**|**Typ.**|**Max.**|| |Internal emitter<br>inductance measured 5<br>mm (0.197 in) from case|_L_E|||13.0||nH| |Storage temperature|_T_stg||-55||150|°C| |Soldering temperature||wave soldering 1.6 mm (0.063 in.) from case<br>for 10 s|||260|°C| |Thermal resistance,<br>junction-ambient|_R_th(j-a)||||40|K/W| |**2**<br>**IGBT**|**2**<br>**IGBT**|**2**<br>**IGBT**|||| |---|---|---|---|---|---| |**Table 2**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Collector-emitter voltage|_V_CE|||750|V| |DC collector current,<br>limited by Tvjmax|_I_C||_T_c= 25 °C|200|A| ||||_T_c= 100 °C|200|| |Pulsed collector current, tp<br>limited by Tvjmax|_I_Cpulse|||600|A| |Turn-of safe operating<br>area||_V_CE≤ 750 V,_t_p= 1 µs,_T_vj≤|175 °C|600|A| |Gate-emitter voltage|_V_GE|||±20|V| |Transient gate-emitter<br>voltage|_V_GE|_t_p<0.1 µs,_D_<0.01||±30|V| |Short-circuit withstand<br>time|_t_SC|_V_CC≤ 470 V,_V_GE=15 V, Allowed number of<br>short circuits < 1000, Time between short<br>circuits ≥ 1.0 s,_T_vj= 25 °C||5|µs| |Power dissipation|_P_tot||_T_c= 25 °C|1071|W| ||||_T_c= 100 °C|535|| |**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|**Table 3**<br>**Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Collector-emitter<br>saturation voltage|_V_CEsat|_I_C= 200 A,_V_GE=15 V|_T_vj= 25 °C||1.3|1.5|V| ||||_T_vj= 175 °C||1.6||| |Gate-emitter threshold<br>voltage|_V_GEth|_I_C= 2.60 mA, VCE= VGE,_T_vj=25 °C||5|5.8|6.5|V| **(table continues...)** Datasheet Revision 1.00 2022-02-16 3 **AIKQ200N75CP2 EDT2 IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **2 IGBT** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Zero gate-voltage collector<br>current|_I_CES|_V_CE= 750 V,_V_GE=0 V|_T_vj=25 °C|||200|µA| ||||_T_vj=175 °C||6000||| |Gate-emitter leakage<br>current|_I_GES|_V_CE=0 V,_V_GE=20 V||||100|nA| |Transconductance|_g_fs|_I_C= 200 A,_V_CE=20 V|||140||S| |Short-circuit collector<br>current|_I_SC|_V_CC≤ 470 V,_V_GE=15 V,_t_SC≤ 5 µs, Allowed<br>number of short circuits < 1000 , Time<br>between short circuits ≥ 1.0 s,_T_vj=25 °C|||1100||A| |Input capacitance|_C_ies|_V_CE=25 V,_V_GE=0 V,_f_=100 kHz|||21250||pF| |Output capacitance|_C_oes|_V_CE=25 V,_V_GE=0 V,_f_=100 kHz|||535||pF| |Reverse transfer<br>capacitance|_C_res|_V_CE=25 V,_V_GE=0 V,_f_=100 kHz|||93||pF| |Gate charge|_Q_G|_I_C= 200 A,_V_GE=15 V,_V_CE=600 V|||1256||nC| |Turn-on delay time|_t_don|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||89||ns| ||||_T_vj= 175 °C,<br>_I_C= 200 A||85||| |Rise time (inductive load)|_t_r|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||120||ns| ||||_T_vj= 175 °C,<br>_I_C= 200 A||117||| |Turn-of delay time|_t_dof|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||266||ns| ||||_T_vj= 175 °C,<br>_I_C= 200 A||284||| |Fall time (inductive load)|_t_f|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||46||ns| ||||_T_vj= 175 °C,<br>_I_C= 200 A||60||| |Turn-on energy_1)_|_E_on|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||15.3||mJ| ||||_T_vj= 175 °C,<br>_I_C= 200 A||16.3||| |Turn-of energy|_E_of|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||7||mJ| ||||_T_vj= 175 °C,<br>_I_C= 200 A||8.1||| **(table continues...)** Datasheet Revision 1.00 2022-02-16 4 **AIKQ200N75CP2 EDT2 IGBT** **3 Diode** **==> picture [105 x 47] intentionally omitted <==** ## **(continued) Characteristic values** |**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|**Table 3**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Total switching energy|_E_ts|_V_CE= 470 V,_V_GE= -8/15 V,<br>_R_Gon= 5.0 Ω,<br>_R_Gof= 5.0 Ω,_L_σ=50 nH,<br>_C_σ=30 pF|_T_vj= 25 °C,<br>_I_C= 200 A||22.3||mJ| ||||_T_vj= 175 °C,<br>_I_C= 200 A||24.4||| |IGBT thermal resistance,<br>junction to case_2)_|_R_thjc|||||0.14|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| - _1)_ Includes reverse recovery losses _2)_ Not subject to production test - specified by simulation ## **3 Diode** |**3**<br>**Diode**|**3**<br>**Diode**|**3**<br>**Diode**|||| |---|---|---|---|---|---| |**Table 4**<br>**Maximum rated values**|||||| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Unit**| |Diode forward current,<br>limited by Tvjmax|_I_F||_T_c= 25 °C|200|A| ||||_T_c= 100 °C|200|| |Diode pulsed current,<br>limited by Tvjmax|_I_Fpulse|||600|A| |Power dissipation|_P_tot||_T_c= 25 °C|576|W| ||||_T_c= 100 °C|288|| **Table 5 Characteristic values** |**Parameter**|**Symbol**|**Note or test condition**||**Values**|**Values**|**Values**|**Unit**| |---|---|---|---|---|---|---|---| |||||**Min.**|**Typ.**|**Max.**|| |Diode forward voltage|_V_F|_I_F= 200 A|_T_vj=25 °C||1.8|1.95|V| ||||_T_vj=175 °C||1.9||| |Diode reverse recovery<br>charge|_Q_rr|_V_R<470 V,_R_Gon= 4.8 Ω|_T_vj= 25 °C,<br>_I_F= 200 A,<br>_-di_F_/dt_= 1060 A/µs||4.700||µC| ||||_T_vj= 175 °C,<br>_I_F= 200 A,<br>_-di_F_/dt_= 1110 A/µs||7.500||| ## **(table continues...)** Datasheet Revision 1.00 2022-02-16 5 **AIKQ200N75CP2 EDT2 IGBT** **3 Diode** **==> picture [105 x 47] intentionally omitted <==** |**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|**Table 5**<br>**(continued) Characteristic values**|||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Note or test condition**||**Values**|||**Unit**| |||||**Min.**|**Typ.**|**Max.**|| |Diode peak reverse<br>recovery current|_I_rrm|_V_R<470 V,_R_Gon= 4.8 Ω|_T_vj= 25 °C,<br>_I_F= 200 A,<br>_-di_F_/dt_= 1060 A/µs||41.0||A| ||||_T_vj= 175 °C,<br>_I_F= 200 A,<br>_-di_F_/dt_= 1110 A/µs||56.0||| |Reverse recovery energy|_E_rec|_V_R<470 V,_V_GE= -8/15 V,<br>_R_Gon= 4.8 Ω,_L_σ= 50 nH,<br>_C_σ= 30 pF|_-di_F_/dt_= 1060 A/µs<br>,_T_vj=25 °C||1.32||mJ| ||||_-di_F_/dt_= 1110 A/µs<br>,_T_vj=175 °C||2.16||| |Diode thermal resistance,<br>junction to case_1)_|_R_thjc|||||0.26|K/W| |Operating junction<br>temperature|_T_vj|||-40||175|°C| |_1)_<br>Not subject to test|||||||| Datasheet Revision 1.00 2022-02-16 6 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Power dissipation as a function of case temperature, IGBT** Ptot = f(Tc) T ≤ 175 °C vj **Collector current as a function of case temperature, IGBT** IC = f(Tc) Tvj ≤ 175 °C, VGE = 15 V **==> picture [540 x 572] intentionally omitted <==** **----- Start of picture text -----**<br> 1200 220<br>200<br>1000<br>180<br>160<br>800<br>140<br>120<br>600<br>100<br>80<br>400<br>60<br>40<br>200<br>20<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>Typical output characteristic, IGBT Typical output characteristic, IGBT<br>IC = f(VCE) IC = f(VCE)<br>T = 25 °C T = =175 °C<br>vj vj<br>600 600<br>500 500<br>400 400<br>300 300<br>200 200<br>100 100<br>0 0<br>0 1 2 3 4 5 6 0 1 2 3 4 5 6<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 7 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Typical transfer characteristic, IGBT** IC = f(VGE) ## VCE = 20 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 600<br>500<br>400<br>300<br>200<br>100<br>0<br>0 5 10 15<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of collector current, IGBT** t = f(IC) RGoff = 5.0 Ω, VCE = 470 V, Tvj = 175 °C, VGE = -8/15 V, RGon = 5.0 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>0 100 200 300 400<br>**----- End of picture text -----**<br> ## **Typical collector-emitter saturation voltage as a function of junction temperature, IGBT** VCEsat = f(Tvj) VGE = 15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2.0<br>1.6<br>1.2<br>0.8<br>0.4<br>0.0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching times as a function of gate resistor, IGBT** t = f(RG) IC = 200 A, VCE = 470 V, Tvj = 175 °C, VGE = -8/15 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>100<br>10<br>0 10 20 30 40<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 8 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Typical switching times as a function of junction temperature, IGBT** t = f(Tvj) IC = 200 A, RGoff = 5.0 Ω, VCE = 470 V, VGE = -8/15 V, RGon = 5.0 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>100<br>10<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of gate resistor, IGBT** E = f(RG) IC = 200 A, VCE = 470 V, Tvj = 175 °C, VGE = -8/15 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 10 20 30 40<br>**----- End of picture text -----**<br> ## **Typical Gate-emitter threshold voltage as a function of junction temperature, IGBT** VGEth = f(Tvj) IC = 2.60 mA **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 8<br>7<br>6<br>5<br>4<br>3<br>2<br>1<br>0<br>25 50 75 100 125 150<br>**----- End of picture text -----**<br> ## **Typical switching energy losses as a function of collector current, IGBT** E = f(IC) RGoff = 5.0 Ω, VCE = 470 V, Tvj = 175 °C, VGE = -8/15 V, RGon = 5.0 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 80<br>70<br>60<br>50<br>40<br>30<br>20<br>10<br>0<br>0 100 200 300 400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 9 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **Typical switching energy losses as a function of junction temperature, IGBT** E = f(Tvj) IC = 200 A, RGoff = 5.0 Ω, VCE = 470 V, VGE = -8/15 V, RGon = 5.0 Ω **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>25 50 75 100 125 150 175<br>**----- End of picture text -----**<br> **Typical capacitance as a function of collector-emitter voltage, IGBT** C = f(VCE) f = 100 kHz, VGE = 0 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 100000<br>10000<br>1000<br>100<br>10<br>0 5 10 15 20 25 30<br>**----- End of picture text -----**<br> **Typical switching energy losses as a function of collector emitter voltage, IGBT** E = f(VCE) IC = 200 A, RGoff = 5.0 Ω, Tvj ≤ 175 °C, VGE = -8/15 V, RGon = 5.0 Ω **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 28<br>24<br>20<br>16<br>12<br>8<br>4<br>0<br>200 300 400 500<br>**----- End of picture text -----**<br> ## **Typical gate charge, IGBT** VGE = f(QGE) IC = 200 A **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>12<br>8<br>4<br>0<br>-4<br>-8<br>0 200 400 600 800 1000 1200 1400<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 10 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** ## **Typical Short circuit withstand time as a function of gate-emitter voltage, IGBT** ## tSC = f(VGE) ## Tvj ≤ 175 °C, VCC ≤ 470 V **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 9<br>8<br>7<br>6<br>5<br>4<br>3<br>8 9 10 11 12 13 14 15 16<br>**----- End of picture text -----**<br> ## **IGBT transient thermal impedance as a function of pulse width, IGBT** Zth = f(tp) D = tp/T **==> picture [228 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-5<br>1E-6 1E-5 0.0001 0.001 0.01 0.1<br>**----- End of picture text -----**<br> ## **Typical short circuit collector current as a function of gate-emitter voltage, IGBT** IC(SC) = f(VGE) Tvj ≤ 175 °C, VCC ≤ 470 V **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 2000<br>1600<br>1200<br>800<br>400<br>0<br>10 12 14 16 18 20<br>**----- End of picture text -----**<br> ## **Diode transient thermal impedance as a function of pulse width, Diode** Zth = f(tp) D = tp/T **==> picture [229 x 252] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.1<br>0.01<br>0.001<br>0.0001<br>1E-5<br>1E-6 1E-5 0.0001 0.001 0.01 0.1<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 11 **AIKQ200N75CP2 EDT2 IGBT** **==> picture [105 x 47] intentionally omitted <==** ## **4 Characteristics diagrams** **Typical reverse recovery time as a function of diode current slope, Diode** trr = f(diF/dt) VR < 470 V, IF = 200 A **Typical reverse recovery charge as a function of diode current slope, Diode** Qrr = f(diF/dt) VR < 470 V, IF = 200 A **==> picture [540 x 584] intentionally omitted <==** **----- Start of picture text -----**<br> 450 8<br>7<br>400<br>6<br>5<br>350<br>4<br>300<br>3<br>2<br>250<br>1<br>200 0<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>Typical reverse recovery current as a function of diode Typical diode peak rate of fall of reverse recovery<br>current slope, Diode current as a function of diode current slope, Diode<br>Irr = f(diF/dt) dIrr/dt = f(diF/dt)<br>VR < 470 V, IF = 200 A VR < 470 V, IF = 200 A<br>60 0<br>50<br>-100<br>40<br>-200<br>30<br>-300<br>20<br>-400<br>10<br>0 -500<br>500 600 700 800 900 1000 1100 500 600 700 800 900 1000 1100<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 12 **AIKQ200N75CP2 EDT2 IGBT** **4 Characteristics diagrams** **==> picture [105 x 47] intentionally omitted <==** **==> picture [540 x 309] intentionally omitted <==** **----- Start of picture text -----**<br> Typical diode forward voltage as a function of Typical diode forward current as a function of forward<br>junction temperature, Diode voltage, Diode<br>VF = f(Tvj) IF = f(VF)<br>2.5 800<br>700<br>2.0<br>600<br>500<br>1.5<br>400<br>1.0<br>300<br>200<br>0.5<br>100<br>0.0 0<br>25 50 75 100 125 150 175 0 1 2 3 4<br>**----- End of picture text -----**<br> Datasheet Revision 1.00 2022-02-16 13 **AIKQ200N75CP2 EDT2 IGBT** **5 Package outlines** **5 Package outlines** **==> picture [105 x 47] intentionally omitted <==** ## **Package Drawing PG-TO247 PLUS -3** **==> picture [160 x 315] intentionally omitted <==** **==> picture [48 x 237] intentionally omitted <==** **==> picture [328 x 181] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663 EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> ## **Figure 1** Datasheet Revision 1.00 2022-02-16 14 **AIKQ200N75CP2 EDT2 IGBT** **6 Testing conditions** **==> picture [105 x 47] intentionally omitted <==** ## **6 Testing conditions** **==> picture [463 x 564] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t) I,V<br>90% V GE dI F /dt Qt rrrr== Qt aa++ tQ b b<br>10% V GE t a b<br>I C (t) Q a Q b<br>dI<br>90% I C 90% I C<br>10% I C 10% I C t Figure C. Definition of diode switching<br>characteristics<br>V CE (t)<br>t<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>Figure D.<br>10% V GE<br>t<br>I C (t)<br>CC<br>2% I C t<br>V CE (t) Figure E. Dynamic test circuit<br>Parasitic inductance Ls,<br>parasitic capacitor Cs,<br>relief capacitor C ,r<br>t 2 t 4 (only for ZVT switching)<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **Figure 2** Datasheet Revision 1.00 2022-02-16 15 **AIKQ200N75CP2 EDT2 IGBT** **Revision history** **==> picture [105 x 47] intentionally omitted <==** ## **Revision history** |**Revision history**||| |---|---|---| |**Document revision**|**Date of release**|**Description of changes**| |V0.1|2020-10-09|Target| |V0.2|2020-11-02|Updated marking on page1| |V0.1||Target| |n/a|2020-11-30|Datasheet migrated to a new system with a new layout and new revision<br>number schema: target or preliminary datasheet = 0.xy; final datasheet =<br>1.xy| |1.00|2022-02-15|Final datasheet| Datasheet Revision 1.00 2022-02-16 16 ## **Trademarks** All referenced product or service names and trademarks are the property of their respective owners. **Edition 2022-02-16 IMPORTANT NOTICE Published by** The information given in this document shall in no event be regarded as a guarantee of conditions or **Infineon Technologies AG** characteristics (“Beschaffenheitsgarantie”). **81726 Munich, Germany** With respect to any examples, hints or any typical values stated herein and/or any information regarding **© 2022 Infineon Technologies AG** the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities **All Rights Reserved.** of any kind, including without limitation warranties of non-infringement of intellectual property rights of any **Do you have a question about any** third party. **aspect of this document?** In addition, any information given in this document is **Email: erratum@infineon.com** subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning **Document reference** customer’s products and any use of the product of **IFX-AAL443-003** Infineon Technologies in customer’s applications. ## **WARNINGS** Due to technical requirements products may contain dangerous substances. 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Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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