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AIKQ120N60CTXKSA1
IGBT, 160 A, 1.5 V, 833 W, 600 V, TO-247, 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:833W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 833W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 240 |
| Price | 8.12 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [13 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> TM<br>**----- End of picture text -----**<br> **==> picture [469 x 260] intentionally omitted <==** **----- Start of picture text -----**<br> Features: C<br>¢« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI @,,<br>G<br>+ Low gate charge Q 222, Cap<br>« Green package<br>¢ Very soft, fast recovery antiparallel Emitter Controlled HE -<br>diode ni<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V :<br>applications offers: y<br>- very tight parameter distribution G d<br>- high ruggedness, temperature stable behavior C ‘<br>- very high switching speed E<br>Applications:<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKQ120N60CT|600V|120A|1.5V|175°C|AK120DCT|PG-TO247-3-46| Datasheet www.infineon.com 2017-02-09 AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2017-02-09 Datasheet AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Maximum�Ratings** |**Parameter**|**Symbol**||**Value**|**Unit**| |---|---|---|---|---| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=135°C|_I_C||160.0<br>120.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||480.0|A| |Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||480.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=124°C|_I_F||160.0<br>120.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||480.0|A| |Gate-emitter voltage|_V_GE||±20|V| |Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs| |Powerdissipation_T_C=25°C|_P_tot||833.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.18|K/W| |Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.30|K/W| |Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Package not recommended for surface mount application 2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included. 3 V�2.1 2017-02-09 Datasheet AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=120.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.90mA,_V_CE=_V_GE|4.1|4.9|5.7|V| |Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>3000|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=120.0A|-|75.0|-|S| |Integratedgate resistor|_r_G|||none||Ω| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|7530|-|pF| |Output capacitance|_C_oes||-|446|-|| |Reverse transfer capacitance|_C_res||-|206|-|| |Gate charge|_Q_G|_V_CC=480V,_I_C=120.0A,<br>_V_GE=15V|-|772.0|-|nC| |Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|846|-|A| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns| |Rise time|_t_r||-|43|-|ns| |Turn-off delaytime|_t_d(off)||-|310|-|ns| |Fall time|_t_f||-|33|-|ns| |Turn-on energy|_E_on||-|4.10|-|mJ| |Turn-off energy|_E_off||-|2.80|-|mJ| |Total switchingenergy|_E_ts||-|6.90|-|mJ| V�2.1 2017-02-09 Datasheet 4 AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1100A/µs|-|280|-|ns| |Diode reverse recoverycharge|_Q_rr||-|3.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|25.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-500|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=175°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=120.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.0Ω,_R_G(off)=3.0Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|33|-|ns| |Rise time|_t_r||-|51|-|ns| |Turn-off delaytime|_t_d(off)||-|355|-|ns| |Fall time|_t_f||-|43|-|ns| |Turn-on energy|_E_on||-|6.70|-|mJ| |Turn-off energy|_E_off||-|4.10|-|mJ| |Total switchingenergy|_E_ts||-|10.80|-|mJ| **Diode�Characteristic,�at�** _**T**_ **vj�=�175°C** |Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=120.0A,<br>_di_F_/dt_=1000A/µs|-|410|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|10.80|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|45.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-520|-|A/µs| V�2.1 2017-02-09 Datasheet 5 AIKQ120N60CT ## ~~series~~ TRENCHSTOP[TM] **==> picture [474 x 642] intentionally omitted <==** **----- Start of picture text -----**<br> 900 180<br>800 160<br>PP ttt} EE<br>700 NO 140<br>600 120<br>pe] Ne yee tA<br>500 100<br>Senenen| Senna<br>2 400 ee 80 eee<br>300 60<br>Pt oT INE ge EE<br>is ee Ge<br>200 40<br>100 ee ee 20 ee<br>|<br>0 PPE 0 EE<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C “CASE TEMPERATURE [°C T C “CASE TEMPERATURE[I<br>Figure 1. Figure 2.<br>temperature temperature<br>( T j ≤ 175°C) ( V GE ≥ iy T j ≤ 175°C)<br>360 360<br>VGE=20V VGE=20V<br>320 15V 320 15V<br>13V 13V<br>280 a 280 | oe /<br>11V 11V<br>9V 9V<br>e 240 SY 240 SN<br>|RoWLT LR RV<br>8V 8V<br>200 7V 200 7V<br>6V 6V<br>160 160<br>PE ANE PSS"<br>120 120<br>EA ISaoE ENCE<br>80 80<br>SP A LEN<br>40 Vw 40<br>0 p i APR e r |C OL 0 L_ LBERNNLAA NN<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. typical ( _T_ j=25°C) Figure 4. rypieal ( _T_ j=175°C) 6 Datasheet 2017-02-09 AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [230 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 360 Lt<br>Tj=25°C<br>Tj=175°C<br>320 Ey<br>/<br>== 280240 PF]et ftftflLy| / | |<br>Zz /<br>WW<br>faa<br>w) 200 PF} fy |<br>ad<br>eeo 160<br>4<br>:a 120 Pt | tL i<br>80<br>40<br>0<br>0 2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) **==> picture [233 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0 Ld<br>IC=38A<br>IC=75A<br>IC=120A<br>Z 2.5 IC=150A<br>fe)3<br>Ee: 2.0 a<br>> cael<br>& [ee<br>B eee _<br>or rae cee? aor Ue<br>= 1.5 =<br>Lua —=__ -<br>FE<br>:Go 1.0 fT,<br>(e)<br>0.5<br>0.0<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>CE(sat)<br>V<br>**----- End of picture text -----**<br> Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1E+4<br>aa ee A ee ee Hi ttd(off)f a a<br>td(on)<br>tr<br>a ee ee ee \ es<br>ee<br>| td(off) ee A R O<br>tf<br>Ynze |e ttd(on)r |df ip)2 1000 |a | en| ee——ee|ee<br>Ww Lu a ce<br>= = a a ee ee ee<br>- - as a ee<br>100<br>SSS eee<br>5 a a a<br>Ee a es _<br>es Pole|p eepe el 100 es ee<br>aoewt a aee eeee ee<br>10 10<br>0 25 50 75 100 125 150 175 200 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br> Figure 7. **==> picture [149 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 8. Typical **resistor** **==> picture [148 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =120A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Datasheet 7 2017-02-09 AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 8<br>I | ttd(off)f po a ee ee ee typ.min.<br>| td(on) po 7 max.<br>tr<br>a Oo4<br>6<br>S S ee se ee. ee<br>= a mt<br>7p) 5 5 — ~te<br>WwW ~<br>= Lu ss<br>o)Z=oO 100 aa a a ee or= 4 ~> = a>_~ ——~~<br>a<br>Ee a ~<br>= re ee ee ee ee eee 3 ~SL<br>2 Lceeneefpeme ET ~<br>e e ee e 2<br>1<br>10 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. **==> picture [154 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=15/0V,<br>I C =120A, r G=3 ,Dynamic test circuit in<br>E)<br>**----- End of picture text -----**<br> Figure 10. ( _I_ C=1,9mA) **==> picture [471 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 30 40<br>Eoff Eoff<br>Eon Eon<br>Ets 35 Ets<br>/<br>25<br>3 / £ 30<br>Lu Lu a<br>dp)nO 20 7 / (dp)icp) aa<br>e)i / e) 25 ><br>>O / W > oe<br>ow 7 WA O ae<br>nm 15 ; nmwa 20 y<br>z / Zz oe<br>/ Pad<br>15<br>x= = 7<br>10<br>= 7 7 = oe<br>10<br>5 /oe7 - Le a<br>5<br>Ca“ ae<br>0 0<br>0 40 80 120 160 200 240 0 5 10 15 20 25<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =175°C, V CE=400V, (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3 Ω ,Dynamic test circuit in V GE =15/0V, I C =120A,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 8 2017-02-09 AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [474 x 679] intentionally omitted <==** **----- Start of picture text -----**<br> 16 16<br>Eoff Eoff<br>Eon Eon<br>14 Ets 14 Ets<br>5 5 “<br>£& 12 & 12 Z<br>Ww Ww “<br>7) _ 7)<br>io) eo op) 7<br>e) 10 = e) 10 <<br>aa Ube" aa Yo<br>> veo > 7<br>w a7 na a a<br>8 8<br>oO _—_— Oo “<br>Zz 6 a_oT Zz 6 Z<br>E a —_ E a“ 7 | |<br>=Seer 4 a _t| = 4 eeea _|<br>2 2<br>0 0<br>25 50 75 100 125 150 175 200 300 400 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T j =175°C, V GE=15/0V,<br>I C =120A, r G=3 ,Dynamic test circuit in I C =120A, R G=3 , Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>120V Cies<br>480V Coes<br>= / [-— _—_ |<br>14 / A/ == Cres -+-—+—-+ 4+—<br>7 1E+4 Se<br>/ —<br>_ e e<br>S — 12<br>ra} / (aa es es es ee<br>< / re<br>a 10 WA — Wy<br>e) / mn is<br>wv -_ 1000 PN<br>ey e |e NE<br>ul 8 ee < Ts<br>FE Oo a a a<br>== a poeeJ<br>6<br>ut a.a e ee e ee eee<br>O<br>: 100<br>4 _a ss<br>aa<br>asees<br>2 ee ee ee ee ee ee<br>0 10<br>0 100 200 300 400 500 600 700 800 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=120A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 9 Datasheet 2017-02-09 ## AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [478 x 689] intentionally omitted <==** **----- Start of picture text -----**<br> 16001400 Pt] tl tye 12 KU<br>: : 10 PINEEE<br>é =a<br>3 1200 Z Are(| 3 eeN |<br>3 4 e PN<br>8<br>: 1000 y FZz<br>a fe PoP EN<br>MW ZL : LIN<br>800 6<br>a E NN<br>a<br>g 600 oa<br>oa Se 4 fo<br>rs) wa : Eaeeee<br>: Annee Ee Pet<br>400<br>=:; j 2 feytT ye|<br>200<br>ERR<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE | GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current asa Figure 18. sateemitterircuit Voltegwithstandantimei as a function<br>( enV. V CE aartat T j 150°C) ( V CE “A0OV, start at T j =25°C, T jmax ≤ 150°C)<br>LAT TTFPPC PTTL co<br>=<.5O= 0.1 GSAHRSa By SmaT 0.1 MLSa IeA|en|<br>2 CUCU*h Lyi LN TTTti 2O PCES Seeieee<br>eA ss YY Sul<br>D=0.5 D=0.5<br>= Wiper eh, Lu pi iil<br>WW VAatme 0.20.1 llmE)iii) = EareA 0.20.1<br>0.05 0.05<br>xS te ci 0.02 2S CeeAlp, Lit Tnml 0.02 CTWOT<br>0.01 0.01<br>0.01 }) III il single pulse | ra anyrT (Co single pulse<br>ce< ce Yall a egJypelee:Te<br>E ee mail Ee 0.01 Pn ZA er ul<br>22 COMIWi ZAtaa LatParrTn)<br>a H i Hi iemm<br>2 I eI 77} SS aatllli7a ae —<br>Mian Ret oh [LHe] |} Z i+<br>-- [|<br>TPA CHIGIMA ae Se GHG<br>:| SWAINA TLedteele HY St e -t<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.02686799 0.0369369 0.1151423 3.0E-3 ri[K/W]: 0.05464681 0.08604638 0.1607048 4.1E-3<br>τ i[s]: 2.1E-4 1.6E-3 0.01573455 0.2126417 τ i[s]: 2.1E-4 2.6E-3 0.01504089 0.2133931<br>| AMM A Fi a 0 a A [ eT<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. function ient thermal impedancei asa Figure 20. Diodei transientient thermalr impedance4; a8 asa2<br>cycles D of pulse width for different duty tyeles D of pulse width for different duty<br>( D = t p/T) ( D = t p/T)<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br> 10 Datasheet 2017-02-09 AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [477 x 303] intentionally omitted <==** **----- Start of picture text -----**<br> 800 12<br>Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A<br>700<br>10 ttt<br>= \ = Tj=25°C, IF = 120A<br>uw 600 \ a} Tj=175°C, IF = 120A<br>= - ed<br>8<br>500<br>> ow<br>oe)uwF9 Nf 400 ~ XN \ ~ ~L fe)>rs> 6 aaa<br>uw<br>300<br>uw x 4<br>z&<br>f ||——<br>| 200<br>2<br>100 Pf | tt<br>0 0<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> **==> picture [476 x 347] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R =400V,Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>70 0<br>Tj=25°C, IF = 120A Tj=25°C, IF = 120A<br>Tj=175°C, IF = 120A Tj=175°C, IF = 120A<br>—7<br>60<br>> -200<br>= a ee<br>a 7 Z a MS<br>50<br>a7 4 . -400 ol<br>> 40 Z<br>3a 8 -600 J<br>Ww 30 oO<br>a | 8 .<br>-800<br>y gs | [oF]<br>20<br>if<br>aa ce ee es<br>-1000<br>10 \<br>a<br>0 -1200<br>500 700 900 1100 1300 1500 500 700 900 1100 1300 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br> **==> picture [14 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> ( V R<br>**----- End of picture text -----**<br> ( _V_ R 11 Datasheet 2017-02-09 AIKQ120N60CT ## TRENCHSTOP[TM] **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 360 / 4.0 Ld<br>Tj=25°C IF=38A<br>| Tj=175°C / / 3.5 IIFF=75A=120A<br>300 IF=150A<br>3.0<br>kK 240 Ww<br>Zz= / O7 2.5 Pf | tt<br>a / 4<br>3 / s<br>180 2.0<br>vd<br>Qo Q<br><x <x<br>= =<br>xr ag 1.5<br>oO oO<br>120<br>° ’ oe liie<br>J 1.0 oo_<br>/<br>60<br>0.5<br>/<br>0 0.0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br> Figure 25. Figure 26. 12 Datasheet 2017-02-09 AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Package Drawing PG-TO247-3-46** **==> picture [174 x 343] intentionally omitted <==** **==> picture [52 x 258] intentionally omitted <==** **==> picture [357 x 197] intentionally omitted <==** **----- Start of picture text -----**<br> MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br> 13 V�2.1 2017-02-09 Datasheet AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [153 x 99] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br> Figure C. **Definition of diode switching characteristics** **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2017-02-09 Datasheet AIKQ120N60CT **==> picture [86 x 38] intentionally omitted <==** ## TRENCHSTOP[TM] �Series ## **Revision�History** AIKQ120N60CT ## **Revision:�2017-02-09,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2017-02-09|Data sheet created| 15 V�2.1 2017-02-09 Datasheet ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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