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AIKQ100N60CTXKSA1
IGBT, 160 A, 1.5 V, 714 W, 600 V, TO-247, 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:160A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:714W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-247; No
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 714W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 160A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 10.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKQ100N60CT
## TRENCHSTOP[TM]
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TM<br>**----- End of picture text -----**<br>
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Features: C<br>¢« Automotive AEC-Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>* Maximum junction temperature 175°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>* 100% short circuit tested<br>* 100% of the parts are dynamically tested<br>¢ Positive temperature coefficient in V CE(sat)<br>* Low EMI @,,<br>G<br>+ Low gate charge Q 222, Cap<br>« Green package<br>¢ Very soft, fast recovery antiparallel Emitter Controlled HE -<br>diode ni<br>¢ TRENCHSTOP TM _ and Fieldstop technology for 600V :<br>applications offers: y<br>- very tight parameter distribution G d<br>- high ruggedness, temperature stable behavior C ‘<br>- very high switching speed E<br>Applications:<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKQ100N60CT|600V|100A|1.5V|175°C|AK100DCT|PG-TO247-3-46|
Datasheet www.infineon.com
2017-02-09
AIKQ100N60CT
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## TRENCHSTOP[TM] �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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## TRENCHSTOP[TM] �Series
## **Maximum�Ratings**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=130°C|_I_C||160.0<br>100.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||400.0|A|
|Turn off safe operating area<br>_V_CE≤600V,_T_vj≤175°C,_t_p=1µs|-||400.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°Cvaluelimitedbybondwire<br>_T_C=117°C|_I_F||160.0<br>100.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||400.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||714.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,1)<br>wave soldering1.6mm(0.063in.)from case for 10s|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.21|K/W|
|Diode thermal resistance,2)<br>junction - case|_R_th(j-c)||-|-|0.35|K/W|
|Thermal resistance<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Package not recommended for surface mount application
2) Thermal resistance of thermal grease Rth(c-s) (case to heat sink) of more than 0.1K/W not included.
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## TRENCHSTOP[TM] �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=100.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.50<br>1.90|2.00<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=100.0A<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|1.65<br>1.60|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=1.60mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>2500|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=100.0A|-|63.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|6230|-|pF|
|Output capacitance|_C_oes||-|360|-||
|Reverse transfer capacitance|_C_res||-|175|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=100.0A,<br>_V_GE=15V|-|610.0|-|nC|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|802|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.6Ω,_R_G(off)=3.6Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|30|-|ns|
|Rise time|_t_r||-|38|-|ns|
|Turn-off delaytime|_t_d(off)||-|290|-|ns|
|Fall time|_t_f||-|31|-|ns|
|Turn-on energy|_E_on||-|3.10|-|mJ|
|Turn-off energy|_E_off||-|2.50|-|mJ|
|Total switchingenergy|_E_ts||-|5.60|-|mJ|
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## TRENCHSTOP[TM] �Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=100.0A,<br>_di_F_/dt_=1100A/µs|-|225|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|2.80|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|23.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-393|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=175°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=175°C,<br>_V_CC=400V,_I_C=100.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=3.6Ω,_R_G(off)=3.6Ω,<br>_L_σ=63nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|31|-|ns|
|Rise time|_t_r||-|52|-|ns|
|Turn-off delaytime|_t_d(off)||-|351|-|ns|
|Fall time|_t_f||-|42|-|ns|
|Turn-on energy|_E_on||-|6.00|-|mJ|
|Turn-off energy|_E_off||-|3.70|-|mJ|
|Total switchingenergy|_E_ts||-|9.70|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�175°C**
|Diode reverse recoverytime|_t_rr|_T_vj=175°C,<br>_V_R=400V,<br>_I_F=100.0A,<br>_di_F_/dt_=1050A/µs|-|300|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|8.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|50.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-847|-|A/µs|
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AIKQ100N60CT
## ~~Series~~ TRENCHSTOP[TM]
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800 180<br>160<br>700 TT] Eo<br>140<br>600 XEPEP|<br><<br>= Ey) FES 120<br>SENGeRer 500<br>100<br>Pp AP RR AR<br>400<br>80<br>PPO REE AG<br>300<br>60<br>POCA EES EI<br>200<br>40<br>ae pt tt<br>100 CCCP) eee<br>PEEEEN 20 Geer<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>
> Figure 1. Power **temperature** ( _T_ j ≤ 175°C)
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Figure 2. Collector current as<br>temperature<br>( V GE ≥ 15V, T j ≤ 175°C)<br>**----- End of picture text -----**<br>
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300 300<br>VGE=20V VGE=20V<br>270 15V 270 15V<br>13V 13V<br>240 eee 240 Pp /,<br>11V 11V<br>210 210<br>9V 9V<br>EP SSB] ESS<br>Qe<br>8V 8V<br>180 180<br>BERN FE RR<br>7V 7V<br>e 150 JARRE BERNNS 150 3/40<br>LAAT 6V Ug LANDY 6V<br>120 120<br>ED GS22] BERN, Cen<br>90 90<br>60 60<br>KA Os NE<br>30 30<br>Pro PAS<br>0 0<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ j=25°C)
Figure 4. Typical ( _T_ j=175°C)
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AIKQ100N60CT
## TRENCHSTOP[TM]
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300<br>Tj=25°C<br>270 Tj=175°C<br>Eo ) fp<br>240 Po / | je)llzllz<br>oe 210 e e<br>ae |<br>180<br>oO EF<br>a 150 S<br>)e |A fi<br>120<br>gto FL pe<br>rs)- 90 4__<br>re)<br>potty Lye<br>60<br>30<br>0<br>pi [Tw][it]] t y }<br>0 2 4 6 8 10 12 14<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
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3.0<br>IC=38A<br>2.7 IC=75A<br>IC=100A<br>IC=150A<br>Ej<br>z<br>2.4<br>je)llzllz<br>2.1 e e<br>1.8<br>EF aan a —<br>S 1.5 —<br>fi 1.2 Fee_——+——-|-<br>pe EE<br>4__ 0.9<br>re)<br>EE<br>0.6<br>0.3<br>0.0<br>LET]ET<br>0 25 50 75 100 125 150 175<br>T j , JUNCTION TEMPERATURE [°C]<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 6.
Figure 5. Typical ( _V_ CE=20V)
( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000<br>a td(off)d(off) I]<br>a<br>tff<br>es ee ee eee td(on)d(on) ||<br>trr<br>re ee ee |<br>ey ee eee e e _ee<br>e e<br>— _<br>-/= | |<br>=<br>Ww a<br>= aa<br>100<br>g a A<br>Ee a ee ae<br>MS | |eqaaesro-pol|)<br>|<br>ben—<br>10<br>0 25 50 75 100 125 150 175 200<br>I C , COLLECTOR CURRENT [A]<br>t<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1E+4<br>td(off)d(off) I] H td(off) a<br>a<br>tff tf<br>td(on)d(on) || i td(on) a<br>trr tr<br>| i a<br>e _ee 'I {eepL<br>e ee<br>7<br>2 1000 AC<br>= = $7} } |_|} J<br>a Lu A a a<br>aa = a a a ee ee ee eee<br>g LA} | | | | |<br>a<br>|) 80 100 ES ee ee<br>eS<br>2 a<br>A a a ee ee ee ee<br>10<br>175 200 0 10 20 30 40 50 60 70 80<br>r G , GATE RESISTOR [ Ω ]<br>t<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
Figure 7.
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**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3,6 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, I C =100A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Datasheet
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
1000 aa 7<br>I | ttd(off)f po a ee ee ee typ.min.<br>td(on) max.<br>| tr po B o 6<br>ee o)eee wasteae<br>5<br>{ Q _ — ~.<br>Oo —<br>Lu > ~N<br>= — : 4 ieee<br>g 100 a = ~~<br>= a ee ~<br>oO a ee ee ee x 3<br>=<br>=a ee ee ee eee = ~<br>PL epee]<br>e e 2<br>Fo} rrfteee ee| | ee <xts 1<br>10 0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150<br>T j , JUNCTION TEMPERATURE [°C] T j , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =100A, _r_ G=3,6 Ω ,Dynamic test circuit Figure E)
Figure 10.
( _I_ C=1.6mA)
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**----- Start of picture text -----**<br>
30 70<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>60<br>25<br>= ) = y<br>op) / (ep) 50 Wa<br>Lu Wi Lu 7<br>7) 20 / 7) /<br>o 7 o y<br>—! / —! Yo<br>40<br>15<br>z yo z Yo<br>uw / y uw 30<br>E 10 A 4 E a A<br>= Lo\oy = 20 ? ra<br>5<br>7 AA= 10 “bso“<br>aaa a<br>0 0<br>0 25 50 75 100 125 150 175 200 0 10 20 30 40 50 60 70 80<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =175°C, V CE=400V, (inductive load, T j =175°C, V CE=400V,<br>V GE =15/0V, r G=3,6 Ω ,Dynamic test circuit in V GE =15/0V, I C =100A,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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**----- Start of picture text -----**<br>
10 16.0<br>Eoff Eoff<br>9 Eon Eon<br>Ets 14.0 Ets<br>z 8 7 z<br>12.0<br>7p) a 7p) “<br>Lu 7 4 Lu 7<br>7)o 6 20 2 o7) 10.0 Pf | | feL 7 =<br>5 8.0<br>ffz — ao ffz Yeon Z<br>9=ef 4 = | | | 4 = 6.0 pop Z 2 |=<br>E 3 |___ _| E “ a“<br>4.0<br>2<br>2.0<br>1<br>0 0.0<br>25 50 75 100 125 150 175 200 300 400 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =100A, _r_ G=3,6 Ω ,Dynamic test circuit Figure E)
Figure 14.
(inductive load, _T_ j =175°C, _V_ GE=15/0V, _I_ C =100A, _R_ G=3,6 Ω , Dynamic test Figure E)
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**----- Start of picture text -----**<br>
16<br>120V Cies<br>480V Coes<br>14 Cres<br>wa/ 1E+4 EPOU E<br>3)S— 12 \/ / a { a se|}es<br>< /, po<br>1 10 / a— i<br>1000<br>iw eg RO<br>pe Lu \<br>Lu 8 E_—<br>FE= a Oo< a<br>= a Ne EE ee, eee eee eee<br>ul 6 aa po |<br>O<br>: 100<br>4 _a ss<br>aa<br>asees<br>2 ee ee ee ee ee ee<br>0 10<br>0 100 200 300 400 500 600 700 0 5 10 15 20 25 30<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=100A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM]
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1600 14<br>< 1400 PEt ttl | de 12 LEE LEE<br>1200<br>10<br>aZ<br>s Saenerane ‘<br>1000<br>8<br>5 800<br>oO : LLL LLANE<br>6<br>Tea oS<br>600<br>O b<br>4<br>beO 400 ZaL<br>x= (op)<br>2<br>200<br>0 0<br>12 13 14 15 16 17 18 19 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, start at T j 150°C) ( V CE =400V, startat T j =25°C, T jmax ≤ 150°C)<br>i<br>= TTI SIM TM eT Il<br>z ea<br>0.1 Af. x<br>osBe a aa wa A<br>0.1<br>Z onceo EESSIS<br>tl eel | Pt D=0.5 OM | FEASS D=0.5<br>£ 0.2 0.2 CO<br>7 COT ra 0.1 TM CAM Te 0.1<br>x TAT Lee 0.05 IAAI = Age 0.05<br>| Se oests cm PA | 0.02 x YY ETN LAG ET TV 0.02 HM II<br>' 0.01 Lu 0.01<br>Lu Pe single pulse Tt hee single pulse<br>: 0.01 tim ST aoe ll<br>0.01<br>i a2 eer CEA Gee<br>2 a al OCI Con<br>Sec Ce AE TUSpeeil Ce | Rll<br>eerTT GG = Cicer GG i<br>EECA [roa] [nee] [OH] ETCo<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.03045787 0.04949446 0.1280814 3.4E-3 I AIM ri[K/W]: 0.05376081 VI 0.11574 0.1831625 4.6E-3<br>pp τ i[s]: 2.0E-4 2.1E-3 g 0.01548802 0.2130233 τ i[s]: 2.0E-4 TT 2.2E-3 ie 0.01444578 ctl 0.2132621<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal impedance as a Figure 20. Diode transient thermal impedance as a<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
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D<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
_**D**_
( _D_ = _t_ p/T)
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AIKQ100N60CT
## TRENCHSTOP[TM]
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800 10<br>Tj=25°C, IF = 100A Tj=25°C, IF = 100A<br>Tj=175°C, IF = 100A 9 Tj=175°C, IF = 100A<br>700<br>8 e e eee<br>— =a<br>600<br>im sy 0 7<br>= <x<br>500<br>> Oo 6<br>\ a<br>uw — N ><br>6 | \ ><br>O 400 a O 5<br>wi ia 4<br>300<br>He [™ = ~ WW<br>3<br>pf | SEE =<br>200<br>2<br>if eee) f BEER<br>100<br>1<br>0 0<br>500 600 700 800 900 1000 1100 1200 500 600 700 800 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R =400V,Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>60 es 0 es<br>Tj=25°C, IF = 100A Tj=25°C, IF = 100A<br>Tj=175°C, IF = 100A Tj=175°C, IF = 100A<br>50 | | / -200 sh |<br>-_ =a “XN<br>i yo <x, ‘<br>of= 40 Za re) -400 \ oe —~_]<br>ro) Lv 1 \<br>> Z a<br>i-<br>> 30 -600<br>e) call 2<br>ane 2 © \<br>8<br>aw 5 \<br>2 20 +7 3 -800 \<br>ef :<br>a \<br>ow \<br>am )<br>10 -1000<br>0 -1200<br>500 600 700 800 900 1000 1100 1200 500 600 700 800 900 1000 1100 1200<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R =400V, Dynamic test circuit in Figure E) current slope<br>t rr<br>rr<br>Q<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
( _V_ R
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Datasheet
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AIKQ100N60CT
## TRENCHSTOP[TM]
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300 2.50<br>Tj=25°C / IF=38A<br>| Tj=175°C J / I —— F=75A<br>/ 2.25 IF=100A<br>250 IF=150A<br>2.00<br>= 200 uw<br>1.75<br>io I!/ 2FE<br>=)3/3S g<br>150 1.50<br>Q“ / a __|<br>$ x —_<br>= a= 1.25<br>100<br>oS<br>1.00<br>y / © eee<br>50<br>0.75<br>7<br>A<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 25.
Figure 26.
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## TRENCHSTOP[TM] �Series
## **Package Drawing PG-TO247-3-46**
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MILLIMETERS INCHES<br>DIM<br>MIN MAX MIN MAX<br>A 4.90 5.10 0.193 0.201 DOCUMENT NO.<br>A1 2.31 2.51 0.091 0.099 Z8B00174295<br>A2 1.90 2.10 0.075 0.083<br>b 1.16 1.26 0.046 0.050 SCALE 0<br>b1 1.96 2.25 0.077 0.089<br>b2 1.96 2.06 0.077 0.081<br>0 5 5<br>c 0.59 0.66 0.023 0.026 7.5mm<br>D 20.90 21.10 0.823 0.831<br>D1 16.25 16.85 0.640 0.663<br>EUROPEAN PROJECTION<br>D2 1.05 1.35 0.041 0.053<br>D3 0.58 0.78 0.023 0.031<br>E 15.70 15.90 0.618 0.626<br>E1 13.10 13.50 0.516 0.531<br>E3 1.35 1.55 0.053 0.061<br>e 5.44 (BSC) 0.214 (BSC) ISSUE DATE<br>N 3 3 13-08-2014<br>L 19.80 20.10 0.780 0.791<br>L1 - 4.30 - 0.169 REVISION<br>R 1.90 2.10 0.075 0.083 01<br>**----- End of picture text -----**<br>
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## TRENCHSTOP[TM] �Series
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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## TRENCHSTOP[TM] �Series
## **Revision�History**
AIKQ100N60CT
## **Revision:�2017-02-09,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|
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V�2.1 2017-02-09
Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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