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AIKB50N65DF5ATMA1
IGBT, 80 A, 1.6 V, 305 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 305W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 2.08 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## AIKB50N65DF5
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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB50N65DF5|650V|50A|1.6V|175°C|AK50EDF5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-17
AIKB50N65DF5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
AIKB50N65DF5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_C||80.0<br>56.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||150.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||150.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°Cvaluelimitedbybondwire<br>_T_c=100°C|_I_F||42.0<br>26.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||150.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||305.0<br>152.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.50|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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AIKB50N65DF5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=50.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=27.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.50mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=50.0A|-|50.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|3000|-|pF|
|Output capacitance|_C_oes||-|65|-||
|Reverse transfer capacitance|_C_res||-|11|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=50.0A,<br>_V_GE=15V|-|115.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.55|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.66|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|172|-|ns|
|Fall time|_t_f||-|28|-|ns|
|Turn-on energy|_E_on||-|0.13|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.17|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1225A/µs|-|79|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.65|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-235|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1335A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.32|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|14.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-805|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=25.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|179|-|ns|
|Fall time|_t_f||-|9|-|ns|
|Turn-on energy|_E_on||-|0.74|-|mJ|
|Turn-off energy|_E_off||-|0.15|-|mJ|
|Total switchingenergy|_E_ts||-|0.89|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=6.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|205|-|ns|
|Fall time|_t_f||-|19|-|ns|
|Turn-on energy|_E_on||-|0.21|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.27|-|mJ|
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Datasheet
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=25.0A,<br>_di_F_/dt_=1190A/µs|-|117|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.35|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-224|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=6.0A,<br>_di_F_/dt_=1268A/µs|-|63|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.70|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|20.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-514|-|A/µs|
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Datasheet
AIKB50N65DF5
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350 90<br>80<br>300 Pit tt PP EE<br>70<br>250<br>60<br>PP Xo, PRE<br> NC 200<br>50<br>pepL ASE<br>SGR\G8n| 150 40 oN<br>Pp 30 saeeNen<br> Na 100 PEN<br>20<br>ON GERAD<br>50<br>10<br>PLU P|ULEty |<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 "*N 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
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150 150<br>VGE=20V VGE=20V<br>135 18V 135 18V<br>IN 15V ENG 15V 7a<br>120 120<br>\\ If NG ae<br>12V 12V<br>105 105<br>z 10V NY/ee 10V WS<br>8V 8V<br>90 90<br>N/A eS / ae<br>7V 7V<br>75 75<br>6V 6V<br>60 5V 60 5V<br>45 45<br>30 30<br>fx<br>15 15<br>> | |fyxs——<br>0 A e e 0 e 4<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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## AIKB50N65DF5
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150 2.50<br>Tvj = 25°C IC = 6.25A<br>135 Tvj = 150°C IC = 12.5A<br>2.25 IC = 25A<br>IC = 50A<br>120<br>fe)<br>_ I éE 2.00 7<br>ee 105 ee ee<br>ee eee<br>1.75<br>90<br>z 5<br>.ef BeerE<br>a 75 Ee 1.50<br>4a 60 Po | LAE OadFE 1.25<br>ee) ee:<br>rs) 45 / a<br>1.00<br>: fe) jp —<br>30<br>0.75<br>ffif de<br>15<br>0 -— LA.CA 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 ——— a<br>|1 td(off) aa a ee ee |i td(off) ppm a ee|<br>I tf ee ee ee | tf a ee ee ee eee<br>td(on) td(on)<br>tr tr<br>Ff} | p o EE | baa ee |<br>100 100<br>z | TT} g -<br>ip) (a ee ee a es es a ee<br>uw pee ee ip) poee<br>= a Sa ne | a a a Se<br>- a eeee ee eeee ee = aa eeaeeeeee ee<br>Q a a en ee ee ee Geeeeee<br>= ciao Se<br>E Noe E oY<br>2) 10 a 2) 10 a A a ee ee<br>- a a - a<br>aEe iAa aeeeea es ee ee<br>a ee a ee ee ee ee ee eee eee<br>a ee ee a Deee<br>es ee ee ee ee Pf ft | hc] |<br>1 1<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=12 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =25A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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Datasheet
2019-10-17
AIKB50N65DF5
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**----- Start of picture text -----**<br>
1000 aa 5.5<br>td(off) typ.min.<br>I I ttfd(on) a ee — 5.0 max.<br>a eeee she<br>tr<br>4.5<br>( ee a -<br>oe a<br>ss 100 ee Qa 4.0 ~<br>ee<br>- esee ee 3.5 —™—. .<br>es es SY x<br>3.0<br>e n ee —— \<br>> p oco} Bf<br>10 E e i 2.5 N<br>”. A<br>poa eseo)x 2.0 \N<br>1.5<br>—+F4+4>4° |] [PPE] |<br>a<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj ,JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.5mA)<br>I C =25A, r G=12 ,Dynamic test circuit in Figure<br>E)<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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13 3.2<br>Eoff 3.0 Eoff<br>12 fe Eon ] f Eon t<br>Ets 2.8 Ets<br>ee ed ee ee | ft i | ft<br>11<br>2.6<br>10<br>Z Af2 2.4 f o<br>7 9 Y e 2.2<br>ee 8 2.0 ee ee<br>1.8<br>a 7 ee ae<br>1.6<br>6<br>ee eae 1.4 ee ae<br>5 1.2<br>ee 4 ee 0ee 1.0 ee eee<br>0.8<br>Bf A 3 ee<br>0.6<br>fet<br>2<br>0.4<br>>a eee<br>1<br>0.2<br>0 Pa eee 0.0 eee<br>0 30 60 90 120 150 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses asa<br>function of collector T vj current V CE=400V, feuen ofgate T resistor vj V CE=400V,<br>V inetsOv GE r G=12 Ω Dynevnic test circuitin V " GE =15)/0V. I C =25A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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AIKB50N65DF5
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1.2 1.2<br>Eoff Eoff<br>Eon 1.1 Eon<br>Ets Ets<br>1.0 1.0<br>—_ —_ “<br>0.9<br>D 0.8 =a 0.8<br>-_o" __ - o a<br>>a - > 0.7<br>Ww: 0.6 _ aaa owGo| 0.6 ee“* ee [|]<br>Zz - Ww ,<br>i _— Zeeea eea<br>0.5<br>L=<br>O 0.4 O 0.4<br>EE<br>° 0.3<br>0.2 0.2<br>P| “ [pa[| [ | ft 7<br>0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =25A, r G=12 ,Dynamic test circuit in I C =25A, r G=12 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>[7<br>— V CC Cies<br>V CC Co(er)<br>14 -—— 7 / / 1E+4 H E CCoesres _—_——— L<br>a a a<br>ee ee<br>_ 12 Wf, a e e<br>ee<br>Ww<br>= 7. a a ee<br>1000<br>PL Lf lg Gee ==<br>FE 10 /) 2 SE<br>O uw aa<br>Vs= 8 <—porf<br>: iY S 100 Ro<br>i rT a. SS eee<br>Ww 6 oO SR ee ee ee ee ee ee<br>-<br>5<br>y<br>o [aee<br>4<br>10<br>2 [<<<br>0 Pet ft | 1 |a | | | | |<br>0 20 40 60 80 100 120 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=50A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
1<br>aPF ae IE TIA TTI TATE ETT<br>=<br>=5 TCM Con —Lertaa | 1 a i eeSLeee Te<br>lu CO CI Ce D = 0.5 rT CT CTT & S S<br>23 oesb 0.2 TT UT HHI=< SeteWange<br>|UA 0.1 ge D = 0.5<br>0.1<br>0.05 0.2<br>a A 3 | AN<br>eS E SHERe 0.02 ee 0.1 lig’ A 0.1 ea<br>a CO aeem Tn) = ST a oh<br>0.01 0.05<br>HCH=+- YAV/A ae. single pulse ICHHE ET $a2e SEWi a 0.020.01 arTTT<br>single pulse<br>a | i b LAA ANE | IMM UTM<br>0.01<br>D BWANA[ff a y WW<br>2 I I S S H E RT H S 0.01 S/ R Re<br>: a yf -- Py Ti -— {ll<br>° sty)AI/ Tail ani ETSigg | ese) carters ii fatPaiSe oe Siggs eerie it<br>OF A i: 1 2 3 4 5 6 CREATa a PESee i: 1 2 3 4<br>ri[K/W]: 3.6E-3 0.119435 0.182725 0.177799 0.014558 2.0E-3 ri[K/W]: 0.21825 0.39674 0.52365 0.46136<br>τ i[s]: 1.1E-5 2.8E-4 1.9E-3 9.4E-3 0.149024 2.064771 τ i[s]: 5.0E-5 4.9E-4 7.0E-3 0.04062<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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160 1.6<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>= Tvj = 150°C, IF = 25A Sa Tvj = 150°C, IF = 25A<br>1.4<br>140<br>r ‘ a 1.2 mae<br>= 120 =< < 7<br>1.0<br>OG 100 O<br>0.8<br>ep) uw<br>g 80 Sa : |<br>0.6<br>60<br>0.4<br>40 0.2<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19. Typical of diode ( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
24 -100<br>Tvj = 25°C, IF = 25A Tvj = 25°C, IF = 25A<br>Tvj = 150°C, IF = 25A Tvj = 150°C, IF = 25A<br>22 EO)Ld a El) EELd<br>- _<br>E2 20 7 <=, -150<br>Lu 4 =<br>ro)=)>a 18 A 7 | | feSS 2°a=o \\\<br>> 16 = re -200<br>© / — x<br>tu / o<br>if 14 / ZO o<br>a g<br>(e)<br>rf 12 -250 x<br>10<br>8 -300<br>500 800 1100 1400 1700 2000 500 800 1100 1400 1700 2000<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V)
( _V_ R=400V)
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**----- Start of picture text -----**<br>
80 2.50<br>Tvj = 25°C IF = 12.5A<br>Tvj = 150°C IF = 27A<br>70 Tvj = -40°C 2.25 IF = 50A<br>60 2.00<br>50 1.75<br>si g<br>wI<br>D [O]<br>:°Q 40 et | lA :a 1.50 P| | ft<br>a<br>S$= / =ce<br>30 1.25<br>or rn<br>O PT<br>20 1.00 |<br>10 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
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Datasheet
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-17
AIKB50N65DF5
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## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
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Datasheet
AIKB50N65DF5
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## High�speed�switching�series�fifth�generation
## **Revision�History**
AIKB50N65DF5
## **Revision:�2019-10-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|
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V�2.1 2019-10-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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