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AIKB40N65DH5ATMA1
IGBT, 74 A, 1.65 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.08 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## AIKB40N65DH5
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High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB40N65DH5|650V|40A|1.65V|175°C|AK40EDH5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-17
AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|21|-|ns|
|Turn-off delaytime|_t_d(off)||-|158|-|ns|
|Fall time|_t_f||-|15|-|ns|
|Turn-on energy|_E_on||-|0.41|-|mJ|
|Turn-off energy|_E_off||-|0.12|-|mJ|
|Total switchingenergy|_E_ts||-|0.53|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|163|-|ns|
|Fall time|_t_f||-|37|-|ns|
|Turn-on energy|_E_on||-|0.11|-|mJ|
|Turn-off energy|_E_off||-|0.05|-|mJ|
|Total switchingenergy|_E_ts||-|0.16|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1184A/µs|-|72|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.52|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-248|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1165A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.27|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|12.5|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-680|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|176|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.54|-|mJ|
|Turn-off energy|_E_off||-|0.18|-|mJ|
|Total switchingenergy|_E_ts||-|0.72|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|196|-|ns|
|Fall time|_t_f||-|32|-|ns|
|Turn-on energy|_E_on||-|0.17|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.23|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1185A/µs|-|108|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.01|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|17.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-202|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1125A/µs|-|60|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.54|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-422|-|A/µs|
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Datasheet
AIKB40N65DH5
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300 80<br>70<br>250<br>Pit ett} Ae ee et<br>60<br>pA PNcEE<br>200<br>50<br>IX =<br>150 40<br>PEN STN<br>Je 30 EK<br>PPX EN<br>100<br>20<br>NSP RAR<br>50<br>10<br>[EEE]<br>0 0<br>Pp [LPEEN] | NS<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V<br>VGE = 20V<br>18V<br>18V<br>oN 7<br>100 100 15V<br>15V<br>12V<br>12V<br>10V<br>80 80<br>10V<br>8V<br>8V<br>7V<br>7V<br>60 60<br>6V<br>6V<br>E [ Fr /<br>5V<br>5V<br>40 40<br>20 20<br>0 0<br>D ASE D p zeman<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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## AIKB40N65DH5
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**----- Start of picture text -----**<br>
120 2.50<br>Tvj = 25°C IC = 5A<br>Tvj = 150°C IC = 10A<br>2.25 IC = 20A<br>100 IC = 40A<br>z<br>2.00<br>=s we<br>80<br>oei / ep)< 1.75<br>. E<br>a 60 Ee 1.50<br>Ww ad<br>1.25<br>40<br>._<br>1.00<br>20<br>0.75<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>|1 td(off) aa aee ee ee |i td(off) ee a ee ee ae<br>I tf p o | tf a ee ee eee eee<br>td(on) td(on)<br>tr tr<br>F p FE bee<br>| p o | loa |<br>a | ter | | | lll<br>z TTT ea: Vv<br>— 100 pe cs 100 a<br>ip) Pee a<br>uw aae aeeTe ip)| aa aeeheee ee es es Lee<br>= a es ee ee ee = a ee ee ee ee eee<br>- aed,ee ee ee ee ee ed ee ee<br>Q a Q a a ee ee<br>a ec ee<br>E E “-<br>ee | | UE ee<br>2) 10 a a 2) 10 a<br>- a - RR<br>Ee es SS es<br>aaa<br>aa a eeee ee<br>a Deee<br>a Pf ft | hc] |<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 7. Typical switching times as a function of Figure 8. Typical switching times as a function of gate<br>collector current resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω , Dynamic test circuit in V GE =15/0V, I C =20A,Dynamic test circuit in<br>Figure E) Figure E)<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
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Datasheet
2019-10-17
## AIKB40N65DH5
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1000 aa 5.5<br>| i td(off) a ee ee ee typ.min.<br>tf<br>I td(on) a ee ee ee eee _ 5.0 = max.<br>I a eeee a<br>tr<br>4.5<br>(Oa es ee eee <xFE SA tL<br>e) sy<br>iF 100 a es Q 4.0<br>ip) a _ | ae<br>im po (e) S.<br>= a — SS<br>- a a 3.5 aie .<br>a Ww a x<br>= ke ~— *<br>3.0<br>a ee eeee e — —<br>=<br>e e<br>10 2.5<br>7<br>po a aa wi7 \<br>a<br>a ee se x 2.0 \<br>eseo) \<br>\<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>8 2.0<br>Eoff Eoff<br>Eon 1.8 Eon<br>7 | Ets / | Ets I Y<br>/ “<br>5 / 5 1.6 7<br>6<br>ie) / ip) Ve<br>7) / 7) 1.4 : ]<br>5<br>7 / 7 a 1.2 5 Lo<br>va / 7 ya vy “7<br>19) 7 Va 19) ?<br>a / / ing 0 a<br>ra 4 4 7 y 1.0 ” a”<br>Ww / 7 Ww 7 7<br>Y) / 7 U) 0.8 “ 2<br>Zz 3 7 Zz “a ri<br>—4 0.6<br>7<br>2<br>5 ° : a Te” be4 —<br>0.4<br>” eT<br>Zeo & ><br>1 _—<br>oa 0.2 pt<br>a ley<br>or<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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2019-10-17
## AIKB40N65DH5
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0.9 1.0<br>Eoff Eoff<br>0.8 EEonts 0.9 EEonts<br>Elll tt)o Eee ?<br>~| 0.7 e y) , 0.8 Fe<br>7p) 7 7p)<br>0.7<br>a) 0.6 a) “ v7<br>O -_ -_— O 7 Pa<br>aa --- _ aa 0.6 Z<br>>oO 0.5 Ss ae >oO oo“ a<br>uw _ _ uw 0.5 ><br>0.4<br>2 Zz 0.4 7<br>0) 0.3 PP fff | U) Pae 2<br>E E 0.3 <-<br>n —| oa<br>; 0.2 a Fe<br>0.2<br>0.1 SSS eee 0.1 Pe<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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16<br>——s-rnv V CC | Cies a<br>V CC - i¢ 1E+4 I CCooes(er)<br>14 Cres<br>a<br>12 E E<br>=. fi a a ee<br>Ww<br>1000<br>FE 10 jy 2 E e<br>O> uw aaSC<br>Vs 2 pe<br>E 8 =< a a eee<br>100<br>: 7, S fo<br>i i a. —————————<br>6<br>Mu O } SE ee st et<br>xo - ROa i ie le<br>4<br>10<br>aa<br>2 a<br>0 ft tT tf 1 Pot | |<br>0 20 40 60 80 100 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
10
Datasheet
2019-10-17
AIKB40N65DH5
**==> picture [475 x 313] intentionally omitted <==**
**----- Start of picture text -----**<br>
1 EEA Etre HEE PUTIN ETT TATE LETTE TE T<br>PT TTT TT UN<br>Se CCI CCEInE CCE rer TTT 1 ATT ee TT ue ae ma<br>S LTTATTh) S E e<br>WW D = 0.5 er<br>O Pll ins EA EEN aa PSS<br>0.2<br>2 Ve. O N/A<br>TE<br>| |) UE 0.1 yy iy 2 em D = 0.5<br>0.1<br>oa an, a 0.05 Tt ae a lime Al ™ 0.2<br>2 err Ae Ly d ill<br>0.02 0.1 0.1<br>Z Bee ee)ay), Aza atill | = 7AY/ (lillies| | Ti TT<br>0.01 0.05<br>or eo ema Z SSS SoSECS EECA<br>eeeA single pulse Tee 0.02<br>= TT 0.01 EH<br>b Se se Ul = eT + Cer FN<br>2 LL ee P(E single pulse TTT<br>0.01 KA fi ]<br>6 Eye GHG fe 0.01 | PALE Eee Ho]<br>et St ee e e<br>0 i: 1 2 3 4 5 6 Ea i: 1 2 3 4<br>ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3 ri[K/W]: 0.37339 0.46711 0.56421 0.39557<br>τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094 τ i[s]: 1.3E-4 9.0E-4 10.0E-3 0.04909<br>rs | ||<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. Figure 18.<br>( IGBT D = t p/T) transient thermal impedance podeunction transientof pulse eetwidt! impedance as a<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
Figure 18. ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
160 1.4<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>150 Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>1.2<br>140<br>_ SE TT E ELI. ie<br>3. _-<br>PN a<br>130<br>= “omar<br>1.0<br>FTL ce -<br>NETL<br>120<br>: dé<br>ef . :<br>NA~ ><br>110 0.8<br>o) 8 EEE<br>:eto rs:<br>100<br>Ww<br>0.6<br>ee:> 90 W —_ |<br>80<br>PR Dee<br>0.4<br>i<br>70<br>60 0.2<br>Pt EE ey [Ey]<br>500 700 900 1100 1300 1500 1700 1900 2100 500 700 900 1100 1300 1500 1700 1900 2100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20.
( _V_ R=400V)
11
Datasheet
2019-10-17
AIKB40N65DH5
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**----- Start of picture text -----**<br>
24 0<br>23 Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>22 a re -50 =e<br>ee 21 ee ee ee a e<br>a 20 ee e e -100<br>19<br>eo o{[ tt} ioe | | pe<br>re 18 eeee -150<br>a 17<br>16<br>eee EN<br>-200<br>15<br>6 | [4 | | Ue | es SS =<br>14<br>Pee LENSE<br>-250<br>13<br>wo Te | |Cog ae<br>12<br>one eee<br>-300<br>11<br>ae 4a —<br>PC 10<br>9 Yi | | | | | | | -350<br>8<br>7 Pot | tT -400<br>500 700 900 1100 1300 1500 1700 1900 2100 500 700 900 1100 1300 1500 1700 1900 2100<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 21.
Figure 22.
( _V_ R=400V)
( _V_ R=400V)
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**----- Start of picture text -----**<br>
60 2.50<br>Tvj = 25°C IF = 10A<br>Tvj = 150°C IF = 20A<br>= 2.25 F IF = 40A E]<br>50<br>/<br>2.00<br>= 40 Ww<br>: foods S S<br>i < 1.75<br>PLA de Ee<br>8 30 a 1.50<br>2<br>a<br>/<br>1.25<br>: 20 / 2<br>1.00<br>10<br>YE Gere<br>0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 23. Typical diode forward current as a function Figure 24. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
12
Datasheet
2019-10-17
AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-17
AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2019-10-17
Datasheet
AIKB40N65DH5
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## High�speed�switching�series�fifth�generation
## **Revision�History**
AIKB40N65DH5
## **Revision:�2019-10-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|
15
V�2.1 2019-10-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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