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AIKB40N65DF5ATMA1
IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.36 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKB40N65DF5 **==> picture [469 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft antiparallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKB40N65DF5|650V|40A|1.6V|175°C|AK40EDF5|PG-TO263-3| Datasheet www.infineon.com 2019-10-17 AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.2 2019-10-17 Datasheet AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** |**MaximumRatings**||||| |---|---|---|---|---| |**Parameter**|**Symbol**||**Value**|**Unit**| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A| |Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||120.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Defined by design. Not subject to production test. 3 V�2.2 2019-10-17 Datasheet AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|9|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|90.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns| |Rise time|_t_r||-|13|-|ns| |Turn-off delaytime|_t_d(off)||-|166|-|ns| |Fall time|_t_f||-|6|-|ns| |Turn-on energy|_E_on||-|0.39|-|mJ| |Turn-off energy|_E_off||-|0.11|-|mJ| |Total switchingenergy|_E_ts||-|0.50|-|mJ| V�2.2 2019-10-17 Datasheet 4 AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|5|-|ns| |Turn-off delaytime|_t_d(off)||-|183|-|ns| |Fall time|_t_f||-|11|-|ns| |Turn-on energy|_E_on||-|0.09|-|mJ| |Turn-off energy|_E_off||-|0.04|-|mJ| |Total switchingenergy|_E_ts||-|0.13|-|mJ| |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1098A/µs|-|73|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.53|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|13.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-228|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1251A/µs|-|35|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|11.6|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-667|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns| |Rise time|_t_r||-|15|-|ns| |Turn-off delaytime|_t_d(off)||-|203|-|ns| |Fall time|_t_f||-|4|-|ns| |Turn-on energy|_E_on||-|0.53|-|mJ| |Turn-off energy|_E_off||-|0.21|-|mJ| |Total switchingenergy|_E_ts||-|0.74|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns| |Rise time|_t_r||-|6|-|ns| |Turn-off delaytime|_t_d(off)||-|243|-|ns| |Fall time|_t_f||-|20|-|ns| |Turn-on energy|_E_on||-|0.16|-|mJ| |Turn-off energy|_E_off||-|0.08|-|mJ| |Total switchingenergy|_E_ts||-|0.24|-|mJ| V�2.2 2019-10-17 Datasheet 5 AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=20.0A,<br>_di_F_/dt_=1087A/µs|-|114|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|1.20|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|18.0|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-203|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=1119A/µs|-|61|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.57|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|16.7|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-425|-|A/µs| 6 V�2.2 2019-10-17 Datasheet AIKB40N65DF5 **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 300 80<br>70<br>250 TH) NA<br>60 \<br>\ BNE<br>200<br>50<br><x ia<br>PLN PEE<br>; 150 \ pt 40 NO<br>30<br>PONE EEE NG<br>100<br>a<br>20<br>50<br>SanDNG Soeeene<br>10<br>PEN EEE<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>18V 18V<br>/ |<br>100 15V 100 15V<br>TW] [SS<br>12V 12V<br>10V 10V<br>80 80<br>sf) 8V ie | 8V Sy<br>7V 7V<br>60 60<br>6V 6V<br>5V 5V<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>| fA |_ ENT<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Typical output characteristic Figure 4. Typical output characteristic<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br> Datasheet 7 2019-10-17 ## AIKB40N65DF5 **==> picture [532 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 120 2.50<br>Tvj = 25°C IC = 10A<br>Tvj = 150°C IC = 20A<br>2.25 IC = 40A<br>100<br>z<br>s<br>Ee 2.00<br>_ |<br>80<br>Pa rE<br>im <x 1.75<br>oe ep)<br>Ooa 60 fFEe 1.50 uo"<br>ua 5FE 1.25 f=<br>40<br>: pe fo<br>1.00<br>20<br>0.75<br>7<br>BO4nEe Eas<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>| 1 td(off) a a ee ee ee | td(off) a ee ee ee ee en<br>I tf p o | tf ee ee = eee eee<br>td(on) td(on)<br>tr tr<br>F p FE be<br>| a ee ee ee ee | fp,<br>z | Ta =<br>— 100 a cs 100 a<br>ip) Pe a es ee<br>uw a ee ee ee eee ip) a eseee<br>= a a eh he a a en<br>- poa edee ee ee = aa eeee eeee eeaeee e ee eee<br>Q pgs | | __ Q eeee<br>so are ne eelrea<br>Een ee7 E eea 7<br>2) 10 a 2) 10 a 2 es<br>- a a - Sa A<br>po po A<br>a a a 72 a<br>a es ee ee ys a ee ee ee ee<br>a p e | |<br>a Po | ot tT | dT<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br> Figure 7. **==> picture [88 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> T vj =150°C, V CE=400V,<br>**----- End of picture text -----**<br> Figure 8. Typical **resistor** _T_ vj =150°C, _V_ CE=400V, **==> picture [78 x 19] intentionally omitted <==** **----- Start of picture text -----**<br> V GE =15/0V, r G=15 Ω<br>Figure E)<br>**----- End of picture text -----**<br> _V_ GE =15/0V, _I_ C Figure E) 8 Datasheet 2019-10-17 AIKB40N65DF5 **==> picture [474 x 699] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aa 5.5<br>| 1 ttd(off)f a aee aee ee typ.min.<br>I td(on) a eeee ee ee eee _ 5.0 = max.<br>tr<br>a Os [<¢] 4.5 Wee,<br>a ee J] ~ss<br>e) ‘s<br>2f | || 4§ .<br>= 100 a es a 4.0 EE —_| ~<br>ip) a i ~<br>im poa a a (e) — SA s<br>- es ee Wy 3.5 we \<br>= aa ~<br>3.0<br>e e<br>= ee 4 = ~ —_<br>S2)7 10 a eS Ww:7 2.5 ~ ~~ \ \Y<br>po wi XN<br>es \<br>a i ee ee ro) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a function<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.4mA)<br>I C =20A, r G=15 ,Dynamic test circuit in Figure<br>E)<br>15 2.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>12 1.6<br>n n ra<br>Lu Lu ?<br>7) 7) 7<br>o ep) ”<br>e) e) “<br>—! 9 —! 1.2<br>> > a<br>im “ m7 oo a7<br>Zz v4 Zz ¢<br>Lu ¢ Ww pod co<br>oOZz 6 ¢ a (VU)Z 0.8 ° o -7<br>= “ 7 = “ -<br>O 7 a O 7 -<br>E “ , E -<br>a“a7<br>a<br>“ - 7 —<br>3 7 0.4 |<br>a a><br>-t-_<br>“Lo -nee a —_—<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 9 2019-10-17 AIKB40N65DF5 **==> picture [474 x 670] intentionally omitted <==** **----- Start of picture text -----**<br> 1.2 1.4<br>Eoff Eoff<br>Eon Eon<br>Ets 1.2 Ets<br>oy oy<br>0.9<br>on on 1.0<br>Ww Ww<br>7) 7)<br>o —-| oO<br>—! "7 o o<br>> -" > 0.8 ?<br>na na “7<br>Ww 0.6 > Ww Prat<br>) -- _-— ) 0.6 oe -<br>Zz _ =_— Zz oe -<br>= _ L “7 -<br>Ee — F Ee 0.4 7“ a “ -<br>a 0.3 3 =<br>0.2<br>ee - ————<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>——s-rnv V CC [ Cies 7<br>—_— V CC = / Co(er)<br>14 , 1E+4 I Coes<br>Cres<br>a<br>12 fi a<br>=. | a a a<br>Ww<br>1000<br>FE 10 A 2 EE<br>O> uw SEa ss<br>Vs 2 a ee ee ee ee eee eee<br>ke 8 —< pot tT<br>100<br>E _/ S of‘<br>i oO EEE<br>6 O a<br>Mux [__ <- oSSRSa ee re re he ee ae ee ree<br>o RO<br>4<br>10<br>aa<br>2 a<br>0 fit, td 1 Pot | |<br>0 20 40 60 80 100 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> **==> picture [61 x 28] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16.<br>( V GE<br>**----- End of picture text -----**<br> 10 Datasheet 2019-10-17 AIKB40N65DF5 **==> picture [475 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>= a TT 1 CTA ea T T<br>eA<br>Ssz PT TT TeterATENTTT TTTTMM) S= PEER iTTTwallre<br>D = 0.5<br>: TN ae TT — SS<br>OA BEC EHC<br>0.2<br>Z HHH<br>eS ay 0.1 a Z mmaOMS D = 0.5<br>0.1<br>oO= etor eA 0.05 | Wyalllhij| 0.2<br>0.02 0.1 0.1<br>Z Salle / eal CCC Co) = VO Allin<br>0.01 0.05<br>= or eo ema - Ee<br>single pulse 0.02<br>= et A I TM) Ser) ee aml 0.01 Hi cei emma<br>nV 2 ea = CSS TT<br>single pulse<br>E 0.01 A |= AA 1/0<br>Bs 0.01 FAMICTIIETTI ju ET<br>F A ad Fn |<br>A AE AE ITT ol CHM CCC CC<br>i: 1 2 3 4 5 6 i: 1 2 3 4<br>ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3 ri[K/W]: 0.30198 0.50383 0.66635 0.32819<br>| τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094 CREAT PE τ i[s]: 7.0E-5 2.9E-4 3.9E-3 S 0.01434<br>| | ee |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 17. IGBT ( _D_ = _t_ p/T) Figure 18. Diode function ( _D_ = _t_ p/T) **==> picture [236 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 180 |<br>Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A<br>160<br>=<br>140<br>kb _<br>z 120 —<br>m7 ee<br>rdo 10080 ~~<br>60<br>40<br>20<br>500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>**----- End of picture text -----**<br> Figure 19. Typical of diode ( _V_ R=400V) **==> picture [235 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 1.6 |<br>Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A<br>1.4<br>S<br>1.2<br>= -—<br>:<br>a 1.0<br>fe)<br>0.8<br>im<br>0.6<br>0.4<br>0.2<br>500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us]<br>rr<br>Q<br>**----- End of picture text -----**<br> Figure 20. ( _V_ R=400V) 11 Datasheet 2019-10-17 AIKB40N65DF5 **==> picture [477 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 30 0<br>Tvj = 25°C, IF = 20A Tvj = 25°C, IF = 20A<br>Tvj = 150°C, IF = 20A Tvj = 150°C, IF = 20A<br>25 -100<br>= a<br>i 7<br>om 7 vo | =<br>s76<br>O<br>20 -200<br>ra, “7 = ~<br>;<br>7 - - Ss = —<br>7 x —<br>oYO 15 7 —| QooO -300 ~~ —=<br>or 2<br>Ww 3<br>> [.]<br>i<br>me 10 aa -400<br>5 -500<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>60 2.50<br>Tvj = 25°C IF = 10A<br>Tvj = 150°C IF = 20A<br>2.25 IF = 40A<br>50<br>z i / S 2.00<br>= 40 Ww<br>1.75<br>si g<br>5O<br>°<br>: 30 : 1.50 P| | ft<br>2 a<br>S$ / a<br>= y] =a 1.25<br>: 20 ) Oep<br>1.00<br>10<br>of a<br>0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br> Figure 23. Figure 24. 12 Datasheet 2019-10-17 AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Package Drawing PG-TO263-3** **==> picture [112 x 124] intentionally omitted <==** **==> picture [43 x 105] intentionally omitted <==** **==> picture [140 x 91] intentionally omitted <==** |||MIN|MAX|MIN|MAX| |---|---|---|---|---|---| |||4.30|4.57|0.169|0.180| |||0.00<br>|0.25<br>|0.000<br>|0.010<br>| |||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045| |||0.33<br>|0.65<br>|0.013<br>|0.026<br>| |||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055| |||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406| |||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100|| |||5.08||0.200|| |||2||2|| |||14.61|15.88|0.575|0.625| |||2.29|3.00|0.090|0.118| |||0.70|1.60|0.028|0.063| |||1.00|1.78|0.039|0.070| |||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374| |||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>| |||10.70<br>|10.90<br>|0.421<br>|0.429| |||3.65|3.85|0.144|0.152| |||1.25|1.45|0.049|0.057| |atasheet|||||| Datasheet V�2.2 2019-10-17 AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.2 2019-10-17 Datasheet AIKB40N65DF5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Revision�History** AIKB40N65DF5 ## **Revision:�2019-10-17,�Rev.�2.2** ## Previous Revision |Revision|Date|Subjects(major changes since last revision)| |---|---|---| |2.1|2019-06-07|Final Datasheet| |2.2|2019-10-17|updated fig.15| 15 V�2.2 2019-10-17 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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