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AIKB30N65DH5ATMA1
IGBT, 55 A, 1.65 V, 188 W, 650 V, TO-263 (D2PAK), 3 Pins
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- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 188W
- Transistor Mounting: Surface Mount
- DC Collector Current: 55A
- Power Dissipation Pd: 188W
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 55A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.65V
- Collector Emitter Saturation Voltage Vce(on): 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.91 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKB30N65DH5 **==> picture [469 x 284] intentionally omitted <==** **----- Start of picture text -----**<br> High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft anti-parallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br> |**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**| |---|---|---|---|---|---|---| |AIKB30N65DH5|650V|30A|1.65V|175°C|AK30EDH5|PG-TO263-3| Datasheet www.infineon.com 2019-10-17 AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Table�of�Contents** Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 2 V�2.1 2019-10-17 Datasheet AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Maximum�Ratings** |**MaximumRatings**||||| |---|---|---|---|---| |**Parameter**|**Symbol**||**Value**|**Unit**| |Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V| |DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||55.0<br>35.0|A| |Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||90.0|A| |Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||90.0|A| |Diodeforwardcurrent,limitedby_T_vjmax1)<br>_T_c=25°C<br>_T_c=100°C|_I_F||37.0<br>22.0|A| |Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||90.0|A| |Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V| |Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||188.0<br>93.0|W| |Operating junction temperature|_T_vj|-40...+175||°C| |Storage temperature|_T_stg|-55...+150||°C| |Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C| ## **Thermal�Resistance** |**ThermalResistance**||||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| ||||**min.**|**typ.**|**max.**|| |**RthCharacteristics**||||||| |IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.80|K/W| |Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.80|K/W| |Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W| |Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W| 1) Defined by design. Not subject to production test. 3 V�2.1 2019-10-17 Datasheet AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**StaticCharacteristic**||||||| |Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V| |Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=30.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V| |Diode forward voltage|_V_F|_V_GE=0V,_I_F=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V| |Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.30mA,_V_CE=_V_GE|3.2|4.0|4.8|V| |Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA| |Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA| |Transconductance|_g_fs|_V_CE=20V,_I_C=30.0A|-|30.0|-|S| ## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**DynamicCharacteristic**||||||| |Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1800|-|pF| |Output capacitance|_C_oes||-|50|-|| |Reverse transfer capacitance|_C_res||-|10|-|| |Gate charge|_Q_G|_V_CC=520V,_I_C=30.0A,<br>_V_GE=15V|-|70.0|-|nC| |Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=25°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns| |Rise time|_t_r||-|15|-|ns| |Turn-off delaytime|_t_d(off)||-|184|-|ns| |Fall time|_t_f||-|24|-|ns| |Turn-on energy|_E_on||-|0.32|-|mJ| |Turn-off energy|_E_off||-|0.09|-|mJ| |Total switchingenergy|_E_ts||-|0.41|-|mJ| V�2.1 2019-10-17 Datasheet 4 AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation |Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns| |---|---|---|---|---|---|---| |Rise time|_t_r||-|8|-|ns| |Turn-off delaytime|_t_d(off)||-|188|-|ns| |Fall time|_t_f||-|27|-|ns| |Turn-on energy|_E_on||-|0.11|-|mJ| |Turn-off energy|_E_off||-|0.03|-|mJ| |Total switchingenergy|_E_ts||-|0.14|-|mJ| ## **Diode�Characteristic,�at�** _**T**_ **vj�=�25°C** |**DiodeCharacteristic,at****_T_vj=25°C**||||||| |---|---|---|---|---|---|---| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=1046A/µs|-|65|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.48|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|12.3|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-262|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=774A/µs|-|40|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.26|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|10.4|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-560|-|A/µs| ## **Switching�Characteristic,�Inductive�Load** |**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**| |---|---|---|---|---|---|---| ||||**min.**|**typ.**|**max.**|| |**IGBTCharacteristic,at****_T_vj=150°C**||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=15.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns| |Rise time|_t_r||-|15|-|ns| |Turn-off delaytime|_t_d(off)||-|203|-|ns| |Fall time|_t_f||-|19|-|ns| |Turn-on energy|_E_on||-|0.44|-|mJ| |Turn-off energy|_E_off||-|0.11|-|mJ| |Total switchingenergy|_E_ts||-|0.55|-|mJ| |||||||| |Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=23.0Ω,_R_G(off)=23.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns| |Rise time|_t_r||-|9|-|ns| |Turn-off delaytime|_t_d(off)||-|215|-|ns| |Fall time|_t_f||-|30|-|ns| |Turn-on energy|_E_on||-|0.16|-|mJ| |Turn-off energy|_E_off||-|0.04|-|mJ| |Total switchingenergy|_E_ts||-|0.20|-|mJ| V�2.1 2019-10-17 Datasheet 5 AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation **Diode�Characteristic,�at�** _**T**_ **vj�=�150°C** |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=15.0A,<br>_di_F_/dt_=967A/µs|-|97|-|ns| |---|---|---|---|---|---|---| |Diode reverse recoverycharge|_Q_rr||-|0.87|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|15.6|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-218|-|A/µs| |||||||| |Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=5.0A,<br>_di_F_/dt_=870A/µs|-|61|-|ns| |Diode reverse recoverycharge|_Q_rr||-|0.50|-|µC| |Diodepeak reverse recoverycurrent|_I_rrm||-|14.8|-|A| |Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-394|-|A/µs| 6 V�2.1 2019-10-17 Datasheet AIKB30N65DH5 **==> picture [474 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 200 60<br>180<br>FEES 50 NOT<br>160 NAtty ON<br>140<br>e -XPET 2 EN<br>40<br>120<br>100 30<br>Nee: \<br>80<br>PFEPNESE TENE<br>20<br>et] 60 oF IN 8 \<br>40<br>PEASE 10 PETES<br>20<br>aN LN<br>0 P| Et [LIN] 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br> > Figure 1. Power **temperature** ( _T_ vj ≤ 175°C) Figure 2. Collector current as **temperature** ( _V_ GE ≥ 15V, _T_ vj ≤ 175°C) **==> picture [469 x 285] intentionally omitted <==** **----- Start of picture text -----**<br> 90 90<br>VGE=18V<br>80 ae a 80 YY<br>15V<br>70 12V 70 VGE=18V<br>10V 15V<br>60 60<br>8V 12V<br>7V 10V<br>50 50<br>6V 8V<br>40 5V 40 7V<br>4V 6V<br>30 30<br>5V<br>20 20 4V<br>10 10<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br> Figure 3. Typical ( _T_ vj=25°C) Figure 4. Typical ( _T_ vj=150°C) Datasheet 7 2019-10-17 AIKB30N65DH5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 90 2.50<br>IC = 7.5A<br>Tvj = 25°C IC = 15A<br>8070 “T Tvj = 150°C T 2.25 IC = 30A<br>_ fpf| 3E 2.00<br>60<br>Pa rE<br>im <x 1.75<br>5 50 | th<br>w oa 1.50<br>: 40 =rm<br>a FE 1.25<br>A /<br>30<br>9 / oe<br>1.00<br>20 O<br>/<br>/ 0.75<br>10<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br> Figure 5. Typical ( _V_ CE=20V) Figure 6. Typical a function ( _V_ GE=15V) **==> picture [471 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 a 1000 a SS SS ES ES<br>| 1 td(off) poa | td(off) Ee ee<br>I tf pot TT | tf a ee ee ee ee<br>td(on) td(on)<br>tr tr<br>| p | ft | tT | a eee<br>Pitot | | | | tT | | ott | | ht<br>100 100<br>itty ttt ys P e<br>ip) po eT (Sa ee<br>uw poa a hket ip)<br>= Nae a a<br>- aa a aekes eeeeee ee = aa eeeeeeeeeee<br>Q eee eee pf | ee em Teeter |<br>=tLe_ = eee- Tet<br>E E aay<br>pie TTT yg Per<br>2) 10 2) 10 Ss<br>- ee - ER<br>ee ER<br>a<br>a ee ee ee ee ee ee ee Se s e ee e e<br>ee ee ee ee eee a De De<br>P| | | | dt Po | ot tT | dT<br>1 1<br>0 10 20 30 40 50 60 70 80 90 100 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br> Figure 7. **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> Figure 8. Typical **resistor** **==> picture [151 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =15A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br> 8 2019-10-17 AIKB30N65DH5 **==> picture [474 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 aEsa Rs 5.5<br>| td(off) a ee ee ee typ.<br>tf min.<br>td(on) 5.0 max.<br>I a eeee<br>tr<br>n O<br>4.5<br>e —_—_—_————e ee b A<br>> <<br>ry= 100 a e es e 1a 4.0 _—~ “a, ss) .<br>on a i x<br>im a Oo . a<br>- a Ww 3.5 NN ‘<br>3.0<br>Boo eaesshesseszscocgocsccgeccocteeeef ~ \.<br>:= =e3 sy ~~ NON\<br>2) 10 a eS = 2.5<br>7 a 7 ~<br>poaaa wi NX<br>aeseo) 2.0 Ny \<br>1.5<br>\<br>\<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br> Figure 9. Figure 10. **==> picture [471 x 386] intentionally omitted <==** **----- Start of picture text -----**<br> (inductive load, V CE =400V, V GE=15/0V, ( I C=0.3mA)<br>I C =15A, r G=23 ,Dynamic test circuit in Figure<br>E)<br>6.0 1.1<br>Eoff Eoff<br>5.5 Eon 1.0 Eon<br>Ets f Ets 7<br>a Fj } tt fe<br>5.0 ee ee<br>ee e e 0.9<br>= 4.5 7Ate= | e,<br>Bt tt 0.8 ’<br>} 4.0 v2 ¢<br>re ; ett 0.7 | eft<br>> a 3.5 7 =<br>0.6<br>eg ft/ 25 7 7<br>3.0<br>: 4 |<br>ef v4 7 z 0.5 o -<br>zw Sor BL ee eT<br>2 | 2.5 Bee<br>Zz ; Se<br>= 4 Zz 0.4 A 2<br>O 2.0 | [|||] 7YE | | OSs eo<br>PA Oe 0.3 ee<br>1.5<br>A 0.2 —<<br>° 1.0 C7 | baer ye | | e<br>ae A —<br>0.5 0.1<br>ean pt tee y | tt<br>ee<br>0.0 0.0<br>tT | CL<br>0 10 20 30 40 50 60 70 80 90 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=23 Ω ,Dynamic test circuit in V GE =15/0V, I C =15A, Dynamictest circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br> **==> picture [38 x 6] intentionally omitted <==** **----- Start of picture text -----**<br> Datasheet<br>**----- End of picture text -----**<br> 9 2019-10-17 AIKB30N65DH5 **==> picture [489 x 286] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 0.7<br>Eoff Eoff<br>Eon Eon<br>Ets Ets a“<br>0.6 0.6<br>of<br>5 _eor ay oo<br>Wwo 0.5 Luo 0.5 ° 7? a<br>o Bo “ oo<br>° -_ - ~ —_ o a“a<br>> 0.4 = 5 0.4 7<br>2 -- q a<br>Ww eo Ww peat yr<br>fi 0.3 — fi 0.3 a 4<br>= = -<br>S) S) -<br>EE<br>0.2 0.2<br>n<br>n a<br>0.1 0.1<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br> Figure 13. (inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) Figure 14. (inductive load, _T_ vj = 150°C, _V_ GE=15/0V, _I_ C =15A, _r_ G=23 ,Dynamic test circuit in Figure E) **==> picture [474 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>— V CC a30V [ Cies 7<br>V CC Co(er)<br>14 1E+4 I= Coes (2<br>7/ H Cres oe<br>I LS eS<br>_ 12 |; aa a<br>=Ww 7 e e eee<br>1000<br>F 10 s _———<br>O> VZ uw aSS<br>Vs / 2 a a ee ee ee ee ee<br>ke 8 VA —< p ot TE<br>100<br>E Bae Aaa 5 f | | | | |<br>tt 6 / oO E E<br>Mu a SD rePS ee a<br>x SR a in leti<br>4<br>10<br>aa<br>2 a<br>0 PLE EE 1 Pot | |<br>0 10 20 30 40 50 60 70 80 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=30A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br> 10 Datasheet 2019-10-17 AIKB30N65DH5 **==> picture [475 x 263] intentionally omitted <==** **----- Start of picture text -----**<br> S 1 a eee at cc eso ee es |e<br>4 etart eee tn || = wr<br>1<br>we | JH |<br>9 Se | S P<br>ca SeR=a D = 0.5 2 SAU 7 2A D = 0.5<br>0.2 0.2<br>AR 0.1 ITI) 2 7<br>== I im 0.1 IMLI Poame Ti 0.1 ILU<br>~¢ eS SSE) Ya<br>=t YTBP TT AaAe 0.05 iCMTTTTT oS<t ee yAaesLy|LTCo // 0.05<br>0.02 0.02<br>a eeco /f | i!<br>0.01 0.01<br>: en 0.1 | AE ,<br>single pulse single pulse<br>i OT A Tat : pce Etro —C EC<br>Dn 0.01 ralWyqf| paiee l ee iDn |oen/a| Ty (Ba 2a eelSIE<br>FRSC H GT -He Eeee H |<br>- ATCT COTM oie cette fl) EfCN Le ott<br>A ooo AAA LA TA | ool<br>A || i: 1 PET 2 3 CPT 4 5 6 a H i: EEEPP 1 2 3 4<br>ri[K/W]: 7.5E-3 0.179623 0.30962 0.262097 0.022228 2.2E-3 ri[K/W]: 0.36791 0.49101 0.61851 0.32287<br>τ i[s]: 1.4E-5 2.6E-4 1.6E-3 8.2E-3 0.126279 2.036965 τ i[s]: 1.1E-4 4.1E-4 4.2E-3 0.01769<br>d LT [ LEP PP i<br>0.001 0.01<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br> > Figure 17. IGBT ( _D_ = _t_ p/T) Figure 18. Diode function ( _D_ = _t_ p/T) **==> picture [476 x 322] intentionally omitted <==** **----- Start of picture text -----**<br> 140 1.2<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A Tvj = 150°C, IF = 15A<br>120<br>1.0<br>2 ~ im<br>= 100 \. <<br>0.8<br>= ~. ~ > i<br>(afe)i 80 oe~~. >&g ~<br>Luie) aWw 0.6<br>60<br>uw ><br>ia-Wwa<br>0.4<br>Se eee<br>40<br>20 0.2<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/s] di F /dt , DIODE CURRENT SLOPE [A/s]<br>Figure 19. Typical reverse recovery time as a function Figure 20. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R=400V) ( V R=400V)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br> 11 Datasheet 2019-10-17 AIKB30N65DH5 **==> picture [476 x 643] intentionally omitted <==** **----- Start of picture text -----**<br> 22.5 0<br>Tvj = 25°C, IF = 15A Tvj = 25°C, IF = 15A<br>Tvj = 150°C, IF = 15A -50 Tvj = 150°C, IF = 15A<br>—<br>20.0<br>’ -100 ee<br>= a 77)<br>kK a =<br>17.5<br>WW 34 x= -150<br>a z“<br>5<br>O ye aro) -200 IN _~<br>15.0<br>ing 7 3°<br>Ww> 7 py a ‘=2 -250 aNNOa eee<br>12.5<br>nd 7 a -300<br>no} -350 ><br>i 10.0 [e}<br>-400<br>arti<br>7.5<br>-450<br>5.0 -500<br>500 1000 1500 2000 2500 500 1000 1500 2000 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>90 2.50<br>Tvj = 25°C IF = 7.5A<br>Tvj = 150°C IF = 15A<br>80 a 2.25 E IF = 30A Lit<br>/ //<br>70<br>/ 2.00<br>x =.<br>kK 60 i Lu<br>1.75<br>si g<br>5 50 e)<br>6): / :a 1.50 P| | tt<br>e$ 40 | E<br>=<br>1.25<br>30 ~<br>1.00<br>|<br>20<br>0.75<br>10<br>=<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br> Figure 23. Figure 24. 12 Datasheet 2019-10-17 AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Package Drawing PG-TO263-3** **==> picture [112 x 124] intentionally omitted <==** **==> picture [43 x 105] intentionally omitted <==** **==> picture [140 x 91] intentionally omitted <==** |||MIN|MAX|MIN|MAX| |---|---|---|---|---|---| |||4.30|4.57|0.169|0.180| |||0.00<br>|0.25<br>|0.000<br>|0.010<br>| |||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045| |||0.33<br>|0.65<br>|0.013<br>|0.026<br>| |||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055| |||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406| |||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100|| |||5.08||0.200|| |||2||2|| |||14.61|15.88|0.575|0.625| |||2.29|3.00|0.090|0.118| |||0.70|1.60|0.028|0.063| |||1.00|1.78|0.039|0.070| |||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374| |||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>| |||10.70<br>|10.90<br>|0.421<br>|0.429| |||3.65|3.85|0.144|0.152| |||1.25|1.45|0.049|0.057| |atasheet|||||| Datasheet V�2.1 2019-10-17 AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Testing Conditions** **==> picture [252 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br> **==> picture [189 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br> **==> picture [7 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> t<br>**----- End of picture text -----**<br> **==> picture [169 x 63] intentionally omitted <==** Figure D. **==> picture [7 x 4] intentionally omitted <==** **----- Start of picture text -----**<br> CC<br>**----- End of picture text -----**<br> Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching) 14 V�2.1 2019-10-17 Datasheet AIKB30N65DH5 **==> picture [86 x 38] intentionally omitted <==** ## High�speed�switching�series�fifth�generation ## **Revision�History** AIKB30N65DH5 ## **Revision:�2019-10-17,�Rev.�2.1** |Previous Revision|Previous Revision|| |---|---|---| |Revision|Date|Subjects(major changes since last revision)| |2.1|2019-10-17|Final Datasheet| 15 V�2.1 2019-10-17 Datasheet ## **Trademarks** ## party. ## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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