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AIKB20N60CTATMA1
IGBT, 40 A, 1.5 V, 156 W, 600 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- DC Collector Current:40A; Collector Emitter Saturation Voltage Vce(on):1.5V; Power Dissipation Pd:156W; Collector Emitter Voltage V(br)ceo:600V; Transistor Case Style:TO-263; No.
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP
- Power Dissipation: 156W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 150°C
- Continuous Collector Current: 40A
- Collector Emitter Voltage Max: 600V
- Collector Emitter Saturation Voltage: 1.5V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.68 € |
| Current stock | 1000+ |
| Lead time | 30 days |
Datasheet
## AIKB20N60CT
## TRENCHSTOP[TM]
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TM<br>**----- End of picture text -----**<br>
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Features: C<br>« Automotive AEC Q101 qualified<br>¢ Designed for DC/AC converters for Automotive Application<br>* Very low V CE(sat) 1.5V (typ.)<br>¢ Maximum Junction Temperature 150°C<br>G<br>« Dynamically stress tested<br>E<br>¢ Short circuit withstand time 5us<br>¢ Positive temperature coefficient in V CE(sat)<br>« Low EMI<br>C<br>«*¢ TRENCHSTOPGreenLow GatePackageCharge_ M and Fieldstop technology for 600V roeCG): ‘nf<br>applications offers: Z C75 op<br>- very tight parameter distribution <6?<br>- high ruggedness, temperature stable behavior “e<br>- very high switching speed -<br>Applications:<br>G<br>¢ Main inverter<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB20N60CT|600V|20A|1.5V|150°C|AK20DCT|PG-TO263-3|
Datasheet www.infineon.com
2017-02-09
AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Maximum�Ratings**
|**Parameter**|**Symbol**||**Value**|**Unit**|
|---|---|---|---|---|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||600|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_C||40.0<br>20.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax|_I_Cpuls||60.0|A|
|Turnoffsafeoperatingarea_V_CE≤600V,_T_vj≤150°C1)|-||60.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_C=25°C<br>_T_C=100°C|_I_F||40.0<br>20.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax|_I_Fpuls||60.0|A|
|Gate-emitter voltage|_V_GE||±20|V|
|Short circuit withstand time<br>_V_GE=15.0V,_V_CC≤400V<br>Allowed number of short circuits < 1000<br>Time between short circuits:≥1.0s<br>_T_vj=150°C|_t_SC||5|µs|
|Powerdissipation_T_C=25°C|_P_tot||156.0|W|
|Operating junction temperature|_T_vj|-40...+150||°C|
|Storage temperature|_T_stg|-40...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.90|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.50|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
> 1) tp ≤ 1µs
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AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|600|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=20.0A<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|1.50<br>1.85|2.05<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=20.0A<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|1.65<br>1.65|2.05<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.29mA,_V_CE=_V_GE|4.1|4.9|5.7|V|
|Zero gate voltage collector current|_I_CES|_V_CE=600V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=150°C|-<br>-|-<br>550|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=20.0A|-|11.0|-|S|
|Integratedgate resistor|_r_G|||none||Ω|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|1100|-|pF|
|Output capacitance|_C_oes||-|71|-||
|Reverse transfer capacitance|_C_res||-|32|-||
|Gate charge|_Q_G|_V_CC=480V,_I_C=20.0A,<br>_V_GE=15V|-|120.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
|Short circuit collector current<br>Max. 1000 short circuits<br>Time between short circuits:≥1.0s|_I_C(SC)|_V_GE=15.0V,_V_CC≤400V,<br>_t_SC≤5µs<br>_T_vj=150°C|-|183|-|A|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|14|-|ns|
|Turn-off delaytime|_t_d(off)||-|199|-|ns|
|Fall time|_t_f||-|42|-|ns|
|Turn-on energy|_E_on||-|0.31|-|mJ|
|Turn-off energy|_E_off||-|0.46|-|mJ|
|Total switchingenergy|_E_ts||-|0.77|-|mJ|
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## TRENCHSTOP[TM] �Series
**Diode�Characteristic,�at�** _**T**_ **vj�=�25°C**
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|---|---|---|---|---|---|---|
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=600V,<br>_I_F=20.0A,<br>_di_F_/dt_=880A/µs|-|41|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.31|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|13.3|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|711|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=600V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=12.0Ω,_R_G(off)=12.0Ω,<br>_L_σ=131nH,_C_σ=31pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|18|-|ns|
|Rise time|_t_r||-|17|-|ns|
|Turn-off delaytime|_t_d(off)||-|217|-|ns|
|Fall time|_t_f||-|70|-|ns|
|Turn-on energy|_E_on||-|0.47|-|mJ|
|Turn-off energy|_E_off||-|0.60|-|mJ|
|Total switchingenergy|_E_ts||-|1.07|-|mJ|
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=600V,<br>_I_F=20.0A,<br>_di_F_/dt_=800A/µs|-|201|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|1.28|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|16.6|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|481|-|A/µs|
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Datasheet
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AIKB20N60CT
## ~~Series~~ TRENCHSTOP[TM]
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140 30<br>KELLEY<br>120<br>HARE.NSSEEEEES 25 Ke EEN<br>- 100 (INTO « ‘<br>20<br>eX eye FR<br>Pe 80 PEN ye EA<br>15<br>| 60 ENS A<br>10<br>2ee Oe eee eee<br> a 40<br>5<br>Sees<br>20<br>PPP Trin} =f<br>PTET<br>0 0<br>YT TT PI N ~E | | ff A<br>25 50 75 100 125 150 25 50 75 100 125 150<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>P tot I C<br>**----- End of picture text -----**<br>
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Figure 1.<br>temperature<br>( T j ≤ 150°C)<br>**----- End of picture text -----**<br>
Figure 2.
**temperature** ( _V_ GE ≥ _T_ j ≤ 150°C)
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60 60<br>VGE=20V VGE=20V<br>PON 17V LU 17V<br>50 15V Wa // aa 50 15V \Geye<br>13V 13V<br>- Nae \YL<br>11V 11V<br>eT 40 W/Z EE 40 WYOZ|<br>9V 9V<br>7V 7V<br>30 30<br>20 20<br>10 10<br>0 0<br>0 1 2 3 4 0 1 2 3 4<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T j=25°C) ( T j=150°C)<br>I C I C<br>**----- End of picture text -----**<br>
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2017-02-09
AIKB20N60CT
## TRENCHSTOP[TM]
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40 3.0<br>25°C IC=10A<br>Tj=150°C IC=20A<br>35 IC=40A<br>2.5<br>z =<br>< 30 = $ jee lee<br>5 5 2.0 _<br>25<br>WwiadoO ffF7) = Wat _<br>20 1.5<br>oe EF ean<br>O / = P|| fT<br>uw4: 15 // adOFe<br>1.0<br>O i oe oe oe<br>-_<br>10<br>0.5<br>5<br>0 0.0<br>0 2 4 6 8 10 0 50 100 150<br>V GE , GATE-EMITTER VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>I C<br>CE(sat)<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=10V)
Figure 6.
( _V_ GE=15V)
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1000<br>——————————<br>td(off)<br>So oo<br>tf<br>| td(on) oa<br>a tr<br>st +<br>Pi)<br>eee<br>e 100 LITT g<br>n es ee ee es ee ee ee P|<br>uw a es we ee |<br>= Pot ft tT tT Te =<br>- Pt ttte EG<br>g EECCEECEEEEEE §<br>SE -- 6EE<br>e/ 10 FERREreeePPTT SSSEEEEESSS |©©<br>AEEpe | | | | ht EEEhE hE hE EEErr EEE<br>PEECEEEEEEEEEEEH]<br>1<br>0 5 10 15 20 25 30 35 40<br>I C , COLLECTOR CURRENT [A]<br>t t<br>**----- End of picture text -----**<br>
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1000<br>(Pe<br>td(off)<br>i al<br>tf<br>I td(on) ry<br>tr eed<br>I ee aa<br>e r<br>rT TT rePleo<br>g PTTL<br>P|<br>|<br>=<br>EG<br>100<br>§ EEEEEEEEEEEEEE<br>6EE EAEREEEEEEEEEEH<br>|©© GRREEtt [ttt]<br>PLEweber| eer<br>PE<br>10<br>0 10 20 30 40 50 60 70<br>R G , GATE RESISTOR [ Ω ]<br>Figure 8. Typical switching times as a function of<br>resistor<br>(inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, I C =20A,Dynamic test circuit in<br>7 Figure E)<br>t<br>**----- End of picture text -----**<br>
Figure 7.
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(inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω ,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
2017-02-09
## AIKB20N60CT
## TRENCHSTOP[TM]
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1000 a 7<br>|—_ td(off) a eSee e typ. T<br>tf<br>F ee ee eee<br>td(on)<br>tr 6<br>| Poeee rey s FR<br>Le a ee ee,<br>Pt TeA OOEte 5<br>2 PTT TET ETTett) &§ PeerySN<br>¢p) ee fe)ee ee™~<br>4<br>5 2 {| |) | | SR<br>100<br>g a a=<br>oO EGeSSa ee e e eesseee ee ee ee ee xe 3 FEEL<br>Pe SSeS E COP<br>= ee eee eee =<br>a<br>eeWw 2<br>PP eeE e ® 1<br>10 0<br>25 50 75 100 125 150 -50 0 50 100 150<br>T G , JUNCTION TEMPERATURE [°C] T G , JUNCTION TEMPERATURE [°C]<br>Figure 9. Typical switching times as a function of Figure 10. Gate-emitter threshold voltage as a<br>junction temperature of junction temperature<br>(inductive load, V CE =400V, V GE=15/0V, ( I C=0.29mA)<br>I C =20A, R G=12 ,Dynamic test circuit in<br>Figure E)<br>2.4 2.4<br>due to diode recovery due to diode recovery a<br>; [/]<br>Tes TTY 3 fee DO<br>2.0 Eoff 2.0 Eoff<br>PIE PITT Eon* TTT TT tt a} P Eon* T<br>* *<br>Ets / E Ets 4<br>E a 2 JE ee<br>op)@ I T)/ (7p) f oe7<br>(op)Se 1.6 ULLAL7 nO8 1.6 L ee4<br>> > y<br>oO / 19) 7<br>ep 1.2 Lug 1.2 Pe<br>Gea: Ler|<br>=: 0.8 Iiliiiyeat :: 0.8 A eeaT<br>e LAvaert :ge LL retbee tl |<br>Eber;<br>0.4 0.4<br>La aodreer [ETP] EE<br>eetPATELTEE EEE ELLPLETEEEEEE<br>0.0 0.0<br>EEE Ee<br>0 5 10 15 20 25 30 35 40 0 10 20 30 40 50 60 70<br>I C , COLLECTOR CURRENT [A] R G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T j =150°C, V CE=400V, (inductive load, T j =150°C, V CE=400V,<br>V GE =15/0V, R G=12 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A,Dynamictest circuit in<br>Datasheet Figure E) 8 Figure E)<br>t<br>GE(th)<br>V<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
2017-02-09
## AIKB20N60CT
## TRENCHSTOP[TM]
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1.2 *) dueE,, andto diodeE,, includrecov e rylosses ef tf fl 1.6 *) dueE,, andto diodeE,, includrecov e rylosses<br>1.4<br>1.0 Eoff Eoff<br>* *<br>é Eon _ ~ é Eon<br>2 FE Ets* Dee To: 1.2 [F E O ts* ;<br>Lu7)(op) 0.8 _BPes e Lu7)(op) Lc - “7<br>1.0<br>Ee r it<br>>—! itt tit ty —! eae-<br>O) > Dae<br>eg 0.6 S) 0.8 Les<br>|i] gg ctr |<br>6 fj tty]= | a Le<br>0.6<br>0.4<br>ez= fol| | | | _4-desey §5 fF SS ~4-<br>=|-<br>0.4<br>s CEE errye yy’ Eri ee<br>0.2<br>0.2<br>0.0 0.0<br>25 50 75 100 125 150 300 350 400 450 500<br>T j , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
(inductiveinductive lolo **ad** , _V_ CE =400V , _V_ GE=15/0V, _I_ C =20A, _R_ G=12 ,Dynamic test circuit Figure E)
Figure 14.
(inductiveinductive lolo **ad** , _T_ j = 150°C , _V_ GE=15/0V, _I_ C =20A, _R_ G=12 , Dynamic test circuit Figure E)
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20 Ld Ld<br>120V } f= Ciss | TT<br>480V Coss<br>| [| / Ie- Crss LL | | tt Et<br>/ /<br>—_>aWw 15 \/ / / 1000 unaa SC e e ee ee ee<br>po<br>Oo} a<br><x / LC aee<br>a & ee<br>g J) ee a OO<br>or 2<br>wi- 10 A <E 1\<br>Lu \ “XN<br>100<br>= - poN UPeT<br>x a<br>0) a ee ee ee ee eee<br>-<br>5<br>0 10<br>0 25 50 75 100 125 150 0 10 20 30 40 50<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
Figure 15. Typical ( _I_ C=20A)
Figure 16. ( _V_ GE
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AIKB20N60CT
## TRENCHSTOP[TM]
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350 12<br>KU<br>a ~<br>300<br>= 10 aN<br>oei Lu<br>é eo ft) > NI<br>w: 250 =ee NY<br>fs)O falZz 8 aN NN<br>: eee<br>Ww:a 200 xeto= NKN\IN<br>6<br>fe) =<br>E 150 5<br>: es Ti T tty yn<br>:<br>or S)Se 4<br>100<br>or<br>: e Tt} T ett<br>-<br>: 6 PPP<br>(¢p) 2 Pp te<br>50<br>0 0<br>12 14 16 18 20 10 11 12 13 14 15<br>V GE , GATE-EMITTER VOLTAGE [V] V GE , GATE-EMITTER VOLTAGE [V]<br>Figure 17. Typical short circuit collector current as a Figure 18. Short circuit withstand time as a function<br>function of gate-emitter voltage gate-emitter voltage<br>( V CE 400V, T j 150°C) ( V CE =400V, start at T j =25°C, T jmax ≤ 150°C)<br>1<br>SraCCFmei ma Sreeeee s aaelCy 1 Lo nn| Hill<br>> eeTP Ie eC<br><=— aINLAYaAW aa ll =< aCO COSCO: eat4 OC<br>O a a ed a a = rn Con Ne ATT<br>OK O a<br>O ese aan a<br>at oY ie 9 SEI /acel<br>IERna! DN y<br>0.1<br>cy D=0.5 ICI 2 ESP D=0.5<br>0.2 0.1 0.2<br>ora aeel Hy]i Oil 0.1 a EeCoCeee 0.1 EECCA<br>=xS Se 0.050.02 < Co COA7 eeCo| 0.050.02 ncOC<br>ar ELM Age 0.01 Ah = CON AA CTIEra 0.01<br>r n/a 1 | ee ea<br>single pulse single pulse<br>|_| Lal Am = i pu il<br>= =<br>0.01<br>gL CN A TTA<br>0.01<br>2 S O o e<br>ee {cee2 SSa ailrea r<br>TE a e<br>oT aA H g<br>i: 1 2 3 4 i: 1 2 3 4<br>ri[K/W]: 0.07041 0.30709 0.3199 0.18715 ri[K/W]: 0.33997 0.44456 0.58146 0.13483<br>AG τ i[s]: 9.6E-5 6.8E-4 0.0108462 0.0692548 | mm 0 0 τ i[s]: 1.3E-4 1.5E-3 0 0.0182142 0.0920745<br>0.001 Ml Se | 0.001 i ...—|<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-7 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 19. IGBT transient thermal resistance as a Figure 20. Diode transient thermal impedance as a<br>I C(SC) t SC<br>thJC thJC<br>Z Z<br>**----- End of picture text -----**<br>
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D<br>**----- End of picture text -----**<br>
( _D_ = _t_ p/T)
( _D_ = _t_ p/T)
_**D**_
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AIKB20N60CT
## TRENCHSTOP[TM]
**==> picture [476 x 322] intentionally omitted <==**
**----- Start of picture text -----**<br>
300 1.6<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>Tj=150°C, IF = 20A Tj=150°C, IF = 20A<br>1.4<br>250<br>< 5 LLL | | | ff<br>z . ee 1.2 ee<br>w 200 ~ Je pop<br>F 7 Te] Be 1.0 |<br>6 150 aan > 0.8 fo<br>2 ee ee eeee<br>7 Go 0.6 fo<br>100<br>a w | | | | [| |<br>: re 0.4 ee ee<br>50 p) ) fe ¢ [ee<br>— 0.2 Pog | UT<br>rm | | | ft |<br>aT CUT<br>0 0.0 PF |<br>600 900 1200 1500 600 900 1200 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery time as a function Figure 22. Typical reverse recovery charge as a<br>of diode current slope function of diode current slope<br>( V R =400V, Dynamic test circuit in Figure E) ( V R =400V, Dynamic test circuit in Figure E)<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
25 0<br>Tj=25°C, IF = 20A Tj=25°C, IF = 20A<br>E Tj=150°C, IF = 20A O|) O E Tj=150°C, IF = 20A ss<br>-150<br>= 20 ne ee e<br>P| gf |) |<br>BS ote Pp | fe z -300 Poy fff<br>ede<br>15<br>-450<br>3 a #<br>Be 10 ge KC<br>-600<br>eyo| de<br>ef. 5 | do PEN<br>-750<br> 4 Nee<br>0 -900<br>Pte te E y Ep yr<br>600 900 1200 1500 600 900 1200 1500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 23. Typical reverse recovery current as a Figure 24. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
> ( ae _V_ R ODV Dynamic test circuit in Figure E)
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Datasheet
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AIKB20N60CT
## TRENCHSTOP[TM]
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60 2.5<br>Tj=25°C IC=10A<br>Tj=150°C IC=20A<br>IC=40A<br>50<br>2.0<br>2 40 fofp Ww= |<br>im / < 1.5<br>3Q 30 / rs<br>$<br>Bf = 1.0<br>i 20 O<br>hs BP<br> a<br>0.5<br>10<br>a<br>0 0.0<br>a ee<br>0.0 0.5 1.0 1.5 2.0 2.5 0 50 100 150<br>V F , FORWARD VOLTAGE [V] T j , JUNCTION TEMPERATURE [°C]<br>Figure 25. Typical diode forward current as a function Figure 26. Typical diode forward voltage as a function<br>I F V F<br>**----- End of picture text -----**<br>
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Datasheet
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AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
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Datasheet<br>**----- End of picture text -----**<br>
V�2.1 2017-02-09
AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>**----- End of picture text -----**<br>
Figure C. **Definition of diode switching characteristics**
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t<br>**----- End of picture text -----**<br>
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Figure D.
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CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2017-02-09
Datasheet
AIKB20N60CT
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## TRENCHSTOP[TM] �Series
## **Revision�History**
AIKB20N60CT
## **Revision:�2017-02-09,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2017-02-09|Data sheet created|
15
V�2.1 2017-02-09
Datasheet
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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