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AIKB15N65DH5ATMA1
IGBT, 30 A, 1.65 V, 105 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 105W
- Transistor Mounting: Surface Mount
- DC Collector Current: 30A
- Power Dissipation Pd: 105W
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.65V
- Collector Emitter Saturation Voltage Vce(on): 1.65V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.47 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKB15N65DH5
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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft anti-parallel diode<br>Features and Benefits: C<br>High speed H5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ Plug and play replacement of previous generation IGBTs<br>G<br>¢ 650V breakdown voltage<br>E<br>¢ Low gate charge Q G<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C C<br>« Dynamically stress tested<br>* Qualified according to AEC-Q101 Ol<br>¢ Green package (ROHS compliant) b = ‘nf<br>¢« Complete product spectrum and PSpice Models: d GL 7. op<br>http://www.infineon.com/igbt/ ee<br>Applications:<br>¢ Off-board charger Fi<br>G<br>¢ On-board charger fl<br>¢« DC/DC converter<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB15N65DH5|650V|15A|1.65V|175°C|AK15EDH5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-17
AIKB15N65DH5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
AIKB15N65DH5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>18.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||32.0<br>17.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||105.0<br>52.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.40|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|2.40|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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AIKB15N65DH5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.65<br>1.85<br>1.95|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|15.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|40.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|24|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|151|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|20|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|7|-|ns|
|Turn-off delaytime|_t_d(off)||-|156|-|ns|
|Fall time|_t_f||-|45|-|ns|
|Turn-on energy|_E_on||-|0.05|-|mJ|
|Turn-off energy|_E_off||-|0.01|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=629A/µs|-|62|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.1|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-161|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=491A/µs|-|35|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.12|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|5.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-384|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|171|-|ns|
|Fall time|_t_f||-|26|-|ns|
|Turn-on energy|_E_on||-|0.23|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.29|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|190|-|ns|
|Fall time|_t_f||-|49|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=604A/µs|-|89|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.46|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-143|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=483A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.24|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.9|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-273|-|A/µs|
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AIKB15N65DH5
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120 35<br>30<br>100 Pp] fy} )) EEE<br>25<br>e 80 \\| fe ho<br>\ iS \<br>20<br>PN‘ PIN| EL<br>60<br>pe) NN<br>15<br>PONTE RA<br>40<br>- Ne 10 pK<br>20<br>PEN ° 5 ELLIN-\<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Figure 2.<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ T vj ≤ 175°C)<br>45 45<br>VGE=20V VGE=20V<br>40 15V 40 15V<br>12V 12V<br>ae ING 2<br>35 Ht 35 LL Z|<br>10V 10V<br>8V 8V<br>30 30<br>7V 7V<br>25 6V 25 6V<br>5V 5V<br>20 20<br>4V 4V<br>15 15<br>10 10<br>5 5<br>pa OK<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 3. Figure 4.<br>( T vj=25°C) ( T vj=150°C)<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Datasheet
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## AIKB15N65DH5
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45<br>Tvj = 25°C<br>Tvj = 150°C<br>36<br>_x=<br>Pa<br>im<br>27<br>4 /<br>.<br>a<br>18<br>|<br>ui<br>fe)~<br>7<br>/ /<br>9<br>Y7 y<br>0<br>4 5 6 7 8 9 10<br>V GE , GATE-EMITTER VOLTAGE [V]<br>I C<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
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2.50<br>IC = 3.8A<br>IC = 7.5A<br>2.25 IC = 15A<br>z<br>OoEe 2.00 a<br>bs _———<br>rE<br><x 1.75<br>7A)<br>E<br>Ee 1.50<br>© 1.25<br>© reeeeeee<br>1.00<br>2& {| | | | |[|<br>0.75<br>0.50<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 6. Typical a function ( _V_ GE=15V)
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1000 a SS SS SS 1000 a SS SS ES ES<br>|1I ttd(off)f aeSa ee ee ee ee |i| ttd(off)f Eeaee ee a<br>td(on) td(on)<br>tr tr<br>| FE fs FE ee ee ee<br>P| |att | P pee<br>e se L ee<br>= 100 a SS SS = 100 ee<br>ip) po ip) Waa a ee ee ee ee ee eee<br>uw=- aPSOa aa CPeeeer ee-cn = aaa eeeesee e s eeee eeee<br>Q Ne ee ee ee ee ee<br>tTE | [hee] ESE SPT | | peor<br>= “ E ae<br>2)- 10 eea 2) 10 aeeSe<br>a - a ee se<br>a po<br>a SC a PS<br>aa a eeeeeeee ee ee ERee Seee ee<br>Po | te tt tt Pot ot tT ht rT<br>1 1<br>0 5 10 15 20 25 30 35 40 45 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=39 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =7.5A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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AIKB15N65DH5
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**----- Start of picture text -----**<br>
1000 a a<br>|1 td(off) aa ee a a ee ee<br>tf<br>I td(on) a ee ee ee eee _<br>I tr a eeee<br><<br>cS 100 eees ja)55<br>ip) a a)<br>imgapoa a a (e)<br>- a Ww<br><=.————— -a<br>Too errhp come y<br>E E<br>2)7 10 po a eS WwWwWw<br>ee<br>a ee se x<br>a eseo)<br>1<br>25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
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5.5 —_—_—_—<br>typ.<br>min.<br>_ 5.0 = max.<br>a<br>< Rar<br>4.5<br>ja)55 4.0 = r — aa iz<br>a) ‘<br>(e) NN— Ns<br>Ww 3.5 ~ wa .<br>a-a ee<br>3.0<br>y ~~ YS<br>E ~~<br>WwWwWw 2.5 “XN<br>\<br>x<br>2.0 \<br>1.5<br>1.0<br>0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C]<br>Figure 10. Gate-emitter threshold voltage as a function<br>of junction temperature<br>( I C=0.15mA)<br>0.45<br>Eoff<br>Eon<br>0.40 Ets<br>=<br>a<br>E 0.35 oe<br>— o7<br>Ww -<br>0.30<br>7) 7 <<br>o> oTProm 7 - _ _ -—<br>- 0.25 “7<br>Zz : - -<br>Lu 0.20<br>o) -<br>I “<br>O 0.15<br>FE<br>~ 0.10 Ene ee—<br>0.05<br>0.00<br>PT [ety] yy<br>5 15 25 35 45 55 65 75 85<br>r G , GATE RESISTOR [ Ω ]<br>Figure 12. Typical switching energy losses as a<br>function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =7.5A, Dynamic test circuit in<br>Figure E)<br>GE(th)<br>V<br>E<br>**----- End of picture text -----**<br>
Figure 9.
(inductive load, _V_ CE =400V, _V_ GE=15/0V, _I_ C =7.5A, _r_ G=39 ,Dynamic test circuit in Figure E)
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2.4<br>Eoff<br>Eon<br>Ets v<br>= /4<br>2.0<br>E /<br>= 7<br>Ww }<br>1.6<br>a 7<br>o> , /¢ 7 7<br>- / 7<br>1.2<br>Zz y;<br>Lu ’<br>o) / | 7<br>I ;<br>O 0.8<br>EF / \|7<br>~ ,<br>0.4<br>7 a<br>0.0<br>a4eee<br>0 5 10 15 20 25 30 35 40 45<br>I C , COLLECTOR CURRENT [A]<br>Figure 11. Typical switching energy losses as a<br>function of collector current<br>(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=39 Ω ,Dynamic test circuit in<br>Figure E)<br>E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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0.35 0.40<br>Eoff Eoff<br>Eon Eon<br>Ets 0.35 Ets<br>0.30 EE Elo.<br>eg a<br>cd 0.30<br>0.25<br>it -* -* o 7 “7 a<br>0.25<br>aa Peta _ aa of a<br>>Se 0.20 “7ec eea- > oo 7<br>O - - O “ a<br>Wwoe L - orWwW 0.20 > ad L 7<br>Ww Ww o 7<br>O) 0.15 O) a 7<br>0.15<br>: : 7<br>Se6 0.10 ee %<br>0.10<br>|||||||<br>0.05<br>0.05<br>0.00 0.00<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =7.5A, r G=39 ,Dynamic test circuit in I C =7.5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16 es 1E+4 _——_—<br>—_——7 VV CCCC == 520V130V 7 H|1 CCieso(er) ee aa<br>14 a / | Coes |<br>Cres<br>s 12 LoL }YAR) 1000 p Ee t | | | dt<br>oO — I<br><x LL po<br>ERA a se<br>FE 10 / 2 a ee ee<br>eee& 8 } eeeaeZz 100<br>= <t a<br>in o<br>Ww 6 fo oOa a NS ee ee<br>O<br>-<br>4 | 10 pt | | |<br>Ee<br>ER seee es ee<br>2 AGREE PP eenseeieneeneedeneeeeedeereeneedereetenderseemedee<br>0 1 Pt | | |<br>0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=7.5A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
( V GE<br>**----- End of picture text -----**<br>
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**==> picture [475 x 251] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>1<br>T, See, D = 0.5 a et Se eA<br>fs) nea >” ci A O Sn ee an<br>Z 600 0.2<br>a 0.1 | aaa STASU D = 0.5<br>S A TTT TTT a P| WII Sa | TN MTT TTT<br>Fm e7il 0.05 BESTS 0.2 ullCECT<br>2 ae, | o. irs f Rast |<br>Z 0.1 mt 0.02 MH 2 ORTH 0.1<br>0.1<br>< SStt Sah | EatHH mm/so/c in SEE<br>0.01 0.05<br>2 CAT ET 2 SAPS Sy-<br>fe single pulse 2 0.02<br>x et YL ||| | LMT TTT A Re 0.01<br>single pulse<br>5 = Aye mall 5 PA | TTI LU<br>Zza 0.01 ee Ri Ro in ZzA 0.01 PA te, Ro |<br>EAE<br>. PACUrT FH HE EER i<br>VE TT TTD P| c= ComtelRe WII |<br>P| | ) {HE i: ITT 1 EL 2 TT 3 TT 4 TTT 5 6 nh"IE TCT i: TM 1 ee 2 TT 3 4 ET<br>ri[K/W]: 0.01678 0.26555 0.62379 0.43666 0.0404 2.4E-3 ri[K/W]: 0.43748 0.64417 0.73101 0.58734<br>τ i[s]: 1.7E-5 2.2E-4 1.1E-3 6.5E-3 0.088895 2.014534 τ i[s]: 8.6E-5 5.5E-4 5.2E-3 0.03767<br>> ———| |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>c)th(j- c)th(j-<br>Z Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
Figure 18. Diode function ( _D_ = _t_ p/T)
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**----- Start of picture text -----**<br>
120 0.60<br>Tvj = 25°C, IF = 7.5A Tvj = 25°C, IF = 7.5A<br>Tvj = 150°C, IF = 7.5A Tvj = 150°C, IF = 7.5A<br>0.55<br>100<br>cS_ iN im ef 0.50 -- i<br>tN 80 O 0.45<br>~ Be e<br>— oO<br>[ag — ><br>> = e<br>0.40<br>g Na ~~ | &<br>9 60 | -—“—=_ ——_ ><br>uyor ©w 0.35<br>Ww or<br>: 40 Troy 0.30 ECC<br>pf<br>0.25<br>20<br>FLL<br>0.20<br>Ey<br>0 0.15<br>400 700 1000 1300 1600 1900 2200 2500 400 700 1000 1300 1600 1900 2200 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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AIKB15N65DH5
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**----- Start of picture text -----**<br>
16 0<br>Tvj = 25°C, IF = 7.5A Tvj = 25°C, IF = 7.5A<br>Tvj = 150°C, IF = 7.5A Tvj = 150°C, IF = 7.5A<br>-50<br>14<br>et} es _ ___<br>5 | t e gg<br>-100<br>ef = z<br>12<br>oa eT<br>=) Pa <<br>Zs<br>: -150<br>|<br>10<br>g oo a<br>-200<br>Wy a : sw<br>yp ya S<br>7) YT/ a) _<br>8<br>uwaan ao se]E -250 Ss><br>S |oT N<br>en A<br>6<br>-300<br>4 -350<br>400 700 1000 1300 1600 1900 2200 2500 400 700 1000 1300 1600 1900 2200 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>I rr<br>/dt<br>rr<br>I rr dI<br>**----- End of picture text -----**<br>
Figure 21. Typical function ( _V_ R=400V)
Figure 22.
( _V_ R=400V)
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**----- Start of picture text -----**<br>
30 2.50<br>Tvj = 25°C IF = 4.5A<br>Tvj = 150°C IF = 9A<br>2.25 IF = 18A<br>24<br>2.00<br>x =.<br>= Ww<br>1.75<br>si 18 g<br>5 e)<br>:° :0 1.50 P| | ft to<br>e E<br>$ 12 =<br>1.25<br>z / ls) oo<br>1.00<br>© |<br>6<br>yY 0.75<br>7<br><<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F ,FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
Datasheet
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AIKB15N65DH5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-17
AIKB15N65DH5
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## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
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Datasheet
AIKB15N65DH5
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## High�speed�switching�series�fifth�generation
## **Revision�History**
AIKB15N65DH5
## **Revision:�2019-10-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|
15
V�2.1 2019-10-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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