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AIKB15N65DF5ATMA1
IGBT, 30 A, 1.6 V, 105 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 105W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 30A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.52 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIKB15N65DF5
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**----- Start of picture text -----**<br>
High speed fast IGBT in TRENCHSTOP _ TM 5 technology copacked with<br>RAPID 1 fast and soft anti-parallel diode<br>Features and Benefits: C<br>High speed F5 technology offering:<br>* Best-in-Class efficiency in hard switching and resonant<br>topologies<br>¢ 650V breakdown voltage<br>G<br>¢ Low gate charge Q G<br>E<br>¢ IGBT copacked with RAPID 1 fast and soft antiparallel diode<br>* Maximum junction temperature 175°C<br>* Dynamically stress tested C<br>* Qualified according to AEC-Q101<br>¢ Green package (ROHS compliant) Ol<br>¢« Complete product spectrum and PSpice Models: ron ‘nf<br>http://www. infineon.com/igbt/ : GL 7. op<br>026<br>a,<br>Applications:<br>¢ Off-board charger f<br>¢ On-board charger Fan)<br>G<br>*« DC/DC converter A<br>¢ Power-Factor correction<br>E<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIKB15N65DF5|650V|15A|1.6V|175°C|AK15EDF5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-17
AIKB15N65DF5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16
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Datasheet
AIKB15N65DF5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||30.0<br>18.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||45.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||45.0|A|
|Diodeforwardcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_F||32.0<br>17.0|A|
|Diodepulsedcurrent,_t_plimitedby_T_vjmax1)|_I_Fpuls||45.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||105.0<br>52.5|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|1.40|K/W|
|Diode thermal resistance,<br>junction - case|_R_th(j-c)||-|-|2.40|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
1) Defined by design. Not subject to production test.
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=15.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Diode forward voltage|_V_F|_V_GE=0V,_I_F=9.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.45<br>1.40<br>1.40|1.80<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.15mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=15.0A|-|15.0|-|S|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|930|-|pF|
|Output capacitance|_C_oes||-|24|-||
|Reverse transfer capacitance|_C_res||-|4|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=15.0A,<br>_V_GE=15V|-|38.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|23|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|157|-|ns|
|Fall time|_t_f||-|22|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.20|-|mJ|
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## High�speed�switching�series�fifth�generation
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|---|---|---|---|---|---|---|
|Rise time|_t_r||-|9|-|ns|
|Turn-off delaytime|_t_d(off)||-|154|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.05|-|mJ|
|Turn-off energy|_E_off||-|0.01|-|mJ|
|Total switchingenergy|_E_ts||-|0.06|-|mJ|
|**DiodeCharacteristic,at****_T_vj=25°C**|||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=635A/µs|-|64|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.26|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|7.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-153|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=25°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=477A/µs|-|36|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.13|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|6.0|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-402|-|A/µs|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=7.5A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|16|-|ns|
|Turn-off delaytime|_t_d(off)||-|186|-|ns|
|Fall time|_t_f||-|13|-|ns|
|Turn-on energy|_E_on||-|0.22|-|mJ|
|Turn-off energy|_E_off||-|0.06|-|mJ|
|Total switchingenergy|_E_ts||-|0.28|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=2.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=39.0Ω,_R_G(off)=39.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|17|-|ns|
|Rise time|_t_r||-|10|-|ns|
|Turn-off delaytime|_t_d(off)||-|189|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.08|-|mJ|
|Turn-off energy|_E_off||-|0.02|-|mJ|
|Total switchingenergy|_E_ts||-|0.10|-|mJ|
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## High�speed�switching�series�fifth�generation
**Diode�Characteristic,�at�** _**T**_ **vj�=�150°C**
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=7.5A,<br>_di_F_/dt_=580A/µs|-|94|-|ns|
|---|---|---|---|---|---|---|
|Diode reverse recoverycharge|_Q_rr||-|0.54|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|9.8|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-148|-|A/µs|
||||||||
|Diode reverse recoverytime|_t_rr|_T_vj=150°C,<br>_V_R=400V,<br>_I_F=2.0A,<br>_di_F_/dt_=490A/µs|-|52|-|ns|
|Diode reverse recoverycharge|_Q_rr||-|0.25|-|µC|
|Diodepeak reverse recoverycurrent|_I_rrm||-|8.2|-|A|
|Diode peak rate of fall of reverse<br>recoverycurrentduring_t_b|_di_rr_/dt_||-|-296|-|A/µs|
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AIKB15N65DF5
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120 35<br>30<br>100 Pp] fy} )) EEE<br>25<br>80<br>20<br>PN‘ PIN| EL<br>60<br>pe) NN<br>15<br>7aaeNGeE ;<br>40<br>Ne 10 pK<br>20<br>PEN S 5 ELLIN-\<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>P tot I C<br>**----- End of picture text -----**<br>
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45 45<br>VGE=20V VGE=20V<br>40 18V 40 18V<br>15V 15V<br>35 35<br>12V 12V<br>10V 10V<br>30 30<br>8V 8V<br>25 7V 25 7V<br>6V 6V<br>20 20<br>5V 5V<br>15 15<br>10 10<br>5 5<br>Kf LOfKY<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
Datasheet
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## AIKB15N65DF5
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45 2.50<br>Tvj = 25°C IC = 3.8A<br>Tvj = 150°C IC = 7.5A<br>40 2.25 IC = 15A<br>EJ) of E J tit<br>z<br>35<br>_ Ee 2.00<br>30<br>Pa rE<br>im <x 1.75<br>5 25 i<br>woa 1.50<br>2 20<br>Oa<br>1.25<br>3 15 ! 5 [|_|<br>(e) 1.00<br>n/n ee<br>10<br>0.75<br>5<br>aALI.<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I C<br>CEsat<br>V<br>**----- End of picture text -----**<br>
Figure 5. Typical ( _V_ CE=20V)
Figure 6. Typical a function ( _V_ GE=15V)
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**----- Start of picture text -----**<br>
1000 a SS SS SS 1000 a SS SS ES ES<br>|1I ttd(off)f aeSa ee ee ee ee |i| ttd(off)f Eeaee ee a<br>td(on) td(on)<br>tr tr<br>| FE fs FE ee ee ee<br>P| |fp | | CT| dT | rt |pf PPP||<br>PPPs: Ler]<br>100 100<br>= |<br>ip) a SS SS = —eeEeEeEeEeeeeeee———————<br>uw aa a ip) a a<br>= a a ee ee ee = aee<br>- aeeee ee a De Deeeee ee<br>Q ee ee a ee<br>TL erence pe<br>i Pat FE --" eg — -<br>= = onan he<br>2) 10 RS 2) 10 a I, ea<br>- a - a se es es<br>aa SC poSS A<br>aa a eeeeeeee ee ee Esaeea ee<br>PF | | | | rt dT | Pf | | hm| |||<br>1 1<br>0 5 10 15 20 25 30 35 40 45 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
Figure 8.
**resistor**
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=39 Ω , Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
(inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, I C =7.5A,Dynamic test<br>Figure E)<br>**----- End of picture text -----**<br>
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## AIKB15N65DF5
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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 td(off) aa ee a a ee ee typ.min.<br>tf<br>I td(on) a ee ee ee eee _ 5.0 == max. |<br>I a eeee ~<br>tr<br><x<br>4.5<br>ee= 100 Se eSee 4.0 e ess<br>ip) a es a NN SM<br>im= poaa aa a (e) ww SN.S N<br>- a Ww 3.5 a wa ‘<br><= -<br>3.0<br>a ee<br>@ feed to F PA KAN<br>EF ee mente e e kK ~ sy ~<br>10 2.5<br>2)7 aa eS Ww \<br>p o Ww N<br>ee \<br>a eseo) 2.0 N<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 0 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V,<br>I C =7.5A, r G=39 ,Dynamic test circuit in<br>Figure E)<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 10. Gate-emitter<br>of junction<br>( I C=0.15mA)<br>**----- End of picture text -----**<br>
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2.2 0.45<br>Eoff Eoff<br>2.0 Eon Eon<br>Ets v 0.40 Ets<br>Eb py 4 ett 7?<br>1.8<br>0.35<br>Cn 1.6 e e4 * 7<br>a 1.4 / 4| Oo 0.30 2 ><br>aa y; a ea _<br>eee: 1.2 0.25 Ze<br>w 4 w uo - -<br>uw / Lu o<br>Wwz 1.0 4 f 7 zwWW 0.20 ¢ ? o a<br>ef) cA<br>L 0.8 A7 A L|g fe<br>PT) 7 0.15<br>= 0.6 44—4 | Le= OP<br>0.10<br>8 eT<br>0.4<br>¢ya a PT | yt<br>er er 0.05<br>0.2<br>0.0 0.00<br>AtrTT— TTT ] LETty ft<br>0 5 10 15 20 25 30 35 40 45 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=39 Ω ,Dynamic test circuit in V GE =15/0V, I C =7.5A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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Datasheet<br>**----- End of picture text -----**<br>
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0.350 0.350<br>Eoff Eoff<br>0.325 [e Eon e 0.325 Mm Eon<br>Ets Ets<br>0.300 = f o | 0.300 | aae<br>5s 0.275 | eera 0.275 | a<br>(op)a 0.250 e eel 0.250<br>amee 0.225 247 op)W 0.225 ee7 “ 7 a<br>So 0.200 fee 0.200<br>& = ee TS& |a 7<br>Wwa 0.175 re—_ eeWw 0.175<br>Ww Lu ?<br>cr 0.150 eel0 0.150<br>L 0.125 L 0.125 4<br>Se 0.100 0.100 7<br>a n= Pee<br>n<br>n fm<br>0.075 0.075<br>0.050 ——————— — 0.050 p——— d<br>0.025 0.025<br>0.000 | | | | tlh 0.000 Pot | | |lh<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>E E<br>**----- End of picture text -----**<br>
Figure 13.
Figure 14.
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**----- Start of picture text -----**<br>
(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =7.5A, r G=39 ,Dynamic test circuit in I C =7.5A, r G=39 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>r V CC v [——_ Cies _ | | | | |<br>V CC Co(er)<br>14 e S / 1E+4 I= Coes (EET<br>Cres<br>ia a rf f+. | 1 4<br>_ /, /| Hfa {_——<br>12<br>= f ae ee ee ee ee ee<br>1000<br>FEO> 10 A V uw2 Eaa eeeee ee<br>Vs 2 a eeee ee<br>ke 8 / —< a ee ee ee ee ee<br>100<br>E my a oe<br>iiWw 6 fo) oO& ;_———a a es<br>y I D ANa ee<br>4<br>10<br>a<br>2 AER RSseeee<br>0 1 | | | | | |<br>0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=7.5A) collector-emitter voltage<br>( V GE =0V, f=1MHz)<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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Datasheet
2019-10-17
AIKB15N65DF5
**==> picture [483 x 617] intentionally omitted <==**
**----- Start of picture text -----**<br>
1<br>5 eee eee ee gemee ee = 1 LTori rT e im | |i | Hl<br>= NoMa D = 0.5 Con = AH Se<br>STACTCNeZ 0.2 uu tat BEERS CageEEEte<br>< SSI On<br>0.1 D = 0.5<br>a mEBBniiil TWA Tri TTT < ILA A | ONY TM<br>o me A 0.05 AL LT a ee Aline 0.2 te I<br>PE Eas ae rill WW aE ie All| ase<br>= 0.1 LIeye 0.02 lt2 EASLAST 0.1 ETE<br>< 0.1 ll<br>0.01 0.05<br>z eee imme, AN om Ne aH oo oS eee Se eet Co<br>i Ao47/2 single pulse Tl uwz ASfae 0.02<br>Pg 0.01<br>single pulse<br>2 Se Oe ea wl 2 | 7401CAR ream TT<br>ZzSU 0.01 eM)e Zz 0.01 LATI R UW CU Ro i<br>- AtVE I ttt EE RSH edie, ccm, iH<br>P| |] |More i: TT 1 2 TT 3 4 tie, 5 ctu, 6 = I InhT T i: eee 1 TTT 2 3 ee 4 TTT<br>ri[K/W]: 0.01678 0.26555 0.62379 0.43666 0.0404 2.4E-3 ri[K/W]: 0.25912 0.74143 0.88586 0.51282<br>τ i[s]: 1.7E-5 2.2E-4 1.1E-3 6.5E-3 0.088895 2.014534 τ i[s]: 4.5E-5 2.7E-4 3.5E-3 0.01643<br>| Th |<br>0.001 0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1 1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s] t p , PULSE WIDTH [s]<br>Figure 17. IGBT transient thermal impedance Figure 18. Diode transient thermal impedance as a<br>( D = t p/T) function of pulse width<br>( D = t p/T)<br>130 0.70<br>Tvj = 25°C, IF = 7.5A Tvj = 25°C, IF = 7.5A<br>120 Tvj = 150°C, IF = 7.5A 0.65 Tvj = 150°C, IF = 7.5A<br>0.60<br>110<br>_ 2<br>0.55<br>eee\<br>100<br>wES Efe 0.50<br>: 90 . Sf<br>0.45<br>ee:3 x eei<br>80 0.40<br>“XN<br>ee::7) 70 a eWw 0.35 | | | | | |<br>0.30<br>p [SNS Be fe<br>60<br>: >— —a 3 0.25 |<br>50<br>| rs” 0.20 FTfT tt<br>40 ae<br>0.15<br>30 0.10<br>400 700 1000 1300 1600 1900 2200 2500 400 700 1000 1300 1600 1900 2200 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>c)th(j- c)th(j-<br>Z Z<br>t rr<br>rr<br>Q<br>**----- End of picture text -----**<br>
Figure 19.
( _V_ R=400V)
Figure 20.
( _V_ R=400V)
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Datasheet
2019-10-17
AIKB15N65DF5
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**----- Start of picture text -----**<br>
16 0<br>Tvj = 25°C, IF = 7.5A Tvj = 25°C, IF = 7.5A<br>15 Tvj = 150°C, IF = 7.5A Tvj = 150°C, IF = 7.5A<br>-50<br>14<br>S ee ee _ ___<br>13 | -100<br>se] “|e Z<br>12<br>D are)<br>-150<br>Sf of _— SY<br>11<br> a ae<br>nana =<br>10 -200<br>9<br>a<br>-250<br>poSs eT 8 lop< E .x<br>if 7 ZO -300<br>6<br>-350<br>5<br>4 -400<br>400 700 1000 1300 1600 1900 2200 2500 400 700 1000 1300 1600 1900 2200 2500<br>di F /dt , DIODE CURRENT SLOPE [A/us] di F /dt , DIODE CURRENT SLOPE [A/us]<br>Figure 21. Typical reverse recovery current as a Figure 22. Typical diode peak rate of fall of reverse<br>function of diode current slope recovery current as a function of diode<br>( V R=400V) current slope<br>( V R=400V)<br>30 2.50<br>Tvj = 25°C IF = 4.5A<br>Tvj = 150°C IF = 9A<br>2.25 IF = 18A<br>24<br>2.00<br>x =.<br>= Ww<br>1.75<br>si 18 g<br>5 e)<br>:° :0 1.50 P| | tt lo<br>e E<br>$ 12 =<br>a 1.25<br>/ fe)o r— si<br>1.00<br>© |<br>6<br>77 0.75<br>0 0.50<br>0.0 0.5 1.0 1.5 2.0 2.5 25 50 75 100 125 150 175<br>V F , FORWARD VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>I rr<br>/dt<br>rr<br>I rr dI<br>I F V F<br>**----- End of picture text -----**<br>
Figure 23.
Figure 24.
12
Datasheet
2019-10-17
AIKB15N65DF5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.1 2019-10-17
AIKB15N65DF5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
14
V�2.1 2019-10-17
Datasheet
AIKB15N65DF5
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## High�speed�switching�series�fifth�generation
## **Revision�History**
AIKB15N65DF5
## **Revision:�2019-10-17,�Rev.�2.1**
|Previous Revision|Previous Revision||
|---|---|---|
|Revision|Date|Subjects(major changes since last revision)|
|2.1|2019-10-17|Final Datasheet|
15
V�2.1 2019-10-17
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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