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AIGB40N65F5ATMA1
IGBT, 74 A, 1.6 V, 250 W, 650 V, TO-263 (D2PAK), 3 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: INFINEON
- Product type: Single IGBTs
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: TRENCHSTOP 5
- Power Dissipation: 250W
- Transistor Mounting: Surface Mount
- DC Collector Current: 74A
- Power Dissipation Pd: 250W
- Transistor Case Style: TO-263 (D2PAK)
- Operating Temperature Max: 175°C
- Continuous Collector Current: 74A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.6V
- Collector Emitter Saturation Voltage Vce(on): 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.69 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## AIGB40N65F5
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High speed FAST IGBT in TRENCHSTOP TM _ 5 technology<br>Features and Benefits: C<br>High speed F5 technology offering:<br>Best-in-Class efficiency in hard switching and resonant<br>topologies<br>650V breakdown voltage<br>Low gate charge Q G G<br>Maximum junction temperature 175°C E<br>Dynamically stress tested<br>Qualified according to AEC-Q101<br>Green package (ROHS compliant) C<br>Complete product spectrum and PSpice Models:<br>http://www. infineon.com/igbt/ @): j<br>Ro "ing<br>Applications: ~?O26 On<br>a<br>Off-board charger - :<br>On-board charger (ad ag<br>DC/DC converter f |<br>Power-factor correction G _<br>E<br>**----- End of picture text -----**<br>
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Applications:<br>**----- End of picture text -----**<br>
|**Type**|**_V_CE**|**_I_C**|**_V_CEsat** **_T_vj=25°C**|**_T_vjmax**|**Marking**|**Package**|
|---|---|---|---|---|---|---|
|AIGB40N65F5|650V|40A|1.6V|175°C|AG40EF5|PG-TO263-3|
Datasheet www.infineon.com
2019-10-18
AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Table�of�Contents**
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
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Datasheet
AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Maximum�Ratings**
|**MaximumRatings**|||||
|---|---|---|---|---|
|**Parameter**|**Symbol**||**Value**|**Unit**|
|Collector-emittervoltage,_T_vj≥25°C|_V_CE||650|V|
|DCcollectorcurrent,limitedby_T_vjmax<br>_T_c=25°C<br>_T_c=100°C|_I_C||74.0<br>46.0|A|
|Pulsedcollectorcurrent,_t_plimitedby_T_vjmax1)|_I_Cpuls||120.0|A|
|Turn off safe operating area<br>_V_CE≤650V,_T_vj≤175°C,_t_p=1µs1)|-||120.0|A|
|Gate-emitter voltage<br>TransientGate-emittervoltage(_t_p≤10µs,_D_<0.010)|_V_GE||±20<br>±30|V|
|Powerdissipation_T_c=25°C<br>Powerdissipation_T_c=100°C|_P_tot||250.0<br>125.0|W|
|Operating junction temperature|_T_vj|-40...+175||°C|
|Storage temperature|_T_stg|-55...+150||°C|
|Soldering temperature,<br>reflow soldering (MSL1 accordingto JEDEC J-STA-020)|||260|°C|
## **Thermal�Resistance**
|**ThermalResistance**|||||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
||||**min.**|**typ.**|**max.**||
|**RthCharacteristics**|||||||
|IGBT thermal resistance,<br>junction - case|_R_th(j-c)||-|-|0.60|K/W|
|Thermal resistance, min. footprint<br>junction - ambient|_R_th(j-a)||-|-|65|K/W|
|Thermal resistance, 6cm² Cu on<br>PCB<br>junction - ambient|_R_th(j-a)||-|-|40|K/W|
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**StaticCharacteristic**|||||||
|Collector-emitter breakdown voltage|_V_(BR)CES|_V_GE=0V,_I_C=0.20mA|650|-|-|V|
|Collector-emitter saturation voltage|_V_CEsat|_V_GE=15.0V,_I_C=40.0A<br>_T_vj=25°C<br>_T_vj=125°C<br>_T_vj=175°C|-<br>-<br>-|1.60<br>1.80<br>1.90|2.10<br>-<br>-|V|
|Gate-emitter threshold voltage|_V_GE(th)|_I_C=0.40mA,_V_CE=_V_GE|3.2|4.0|4.8|V|
|Zero gate voltage collector current|_I_CES|_V_CE=650V,_V_GE=0V<br>_T_vj=25°C<br>_T_vj=175°C|-<br>-|-<br>1000|40<br>-|µA|
|Gate-emitter leakage current|_I_GES|_V_CE=0V,_V_GE=20V|-|-|100|nA|
|Transconductance|_g_fs|_V_CE=20V,_I_C=40.0A|-|40.0|-|S|
1) Defined by design. Not subject to production test.
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AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Electrical�Characteristic,�at�** _**T**_ **vj�=�25°C,�unless�otherwise�specified**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**DynamicCharacteristic**|||||||
|Input capacitance|_C_ies|_V_CE=25V,_V_GE=0V,f=1MHz|-|2500|-|pF|
|Output capacitance|_C_oes||-|50|-||
|Reverse transfer capacitance|_C_res||-|9|-||
|Gate charge|_Q_G|_V_CC=520V,_I_C=40.0A,<br>_V_GE=15V|-|90.0|-|nC|
|Internal emitter inductance<br>measured 5mm (0.197 in.) from<br>case|_L_E||-|7.0|-|nH|
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=25°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|22|-|ns|
|Rise time|_t_r||-|13|-|ns|
|Turn-off delaytime|_t_d(off)||-|166|-|ns|
|Fall time|_t_f||-|6|-|ns|
|Turn-on energy|_E_on||-|0.39|-|mJ|
|Turn-off energy|_E_off||-|0.11|-|mJ|
|Total switchingenergy|_E_ts||-|0.50|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=25°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|5|-|ns|
|Turn-off delaytime|_t_d(off)||-|183|-|ns|
|Fall time|_t_f||-|11|-|ns|
|Turn-on energy|_E_on||-|0.09|-|mJ|
|Turn-off energy|_E_off||-|0.04|-|mJ|
|Total switchingenergy|_E_ts||-|0.13|-|mJ|
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Datasheet
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## High�speed�switching�series�fifth�generation
## **Switching�Characteristic,�Inductive�Load**
|**Parameter**|**Symbol **|**Conditions**||**Value**||**Unit**|
|---|---|---|---|---|---|---|
||||**min.**|**typ.**|**max.**||
|**IGBTCharacteristic,at****_T_vj=150°C**|||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=20.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|21|-|ns|
|Rise time|_t_r||-|15|-|ns|
|Turn-off delaytime|_t_d(off)||-|203|-|ns|
|Fall time|_t_f||-|4|-|ns|
|Turn-on energy|_E_on||-|0.53|-|mJ|
|Turn-off energy|_E_off||-|0.21|-|mJ|
|Total switchingenergy|_E_ts||-|0.74|-|mJ|
||||||||
|Turn-on delaytime|_t_d(on)|_T_vj=150°C,<br>_V_CC=400V,_I_C=5.0A,<br>_V_GE=0.0/15.0V,<br>_R_G(on)=15.0Ω,_R_G(off)=15.0Ω,<br>_L_σ=30nH,_C_σ=30pF<br>_L_σ,_C_σfromFig.E<br>Energy losses include “tail” and<br>diode reverse recovery.|-|19|-|ns|
|Rise time|_t_r||-|6|-|ns|
|Turn-off delaytime|_t_d(off)||-|243|-|ns|
|Fall time|_t_f||-|20|-|ns|
|Turn-on energy|_E_on||-|0.16|-|mJ|
|Turn-off energy|_E_off||-|0.08|-|mJ|
|Total switchingenergy|_E_ts||-|0.24|-|mJ|
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Datasheet
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AIGB40N65F5
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300 80<br>70<br>250 TI NEE<br>60 \<br>\ BNE<br>200<br>50<br><x ia<br>ENDER. Pf Ne<br>150 40<br>30<br>PONE EEN<br>100<br>Not EN<br>20<br>50<br>SEEDNG eee<br>10<br>PN EN<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T C , CASE TEMPERATURE [°C] T C , CASE TEMPERATURE [°C]<br>Figure 1. Power dissipation as a function of case Figure 2. Collector current as a function of case<br>temperature temperature<br>( T vj ≤ 175°C) ( V GE ≥ 15V, T vj ≤ 175°C)<br>120 120<br>VGE = 20V VGE = 20V<br>18V 18V<br>|/ |<br>100 15V 100 15V<br>ENG 7<br>12V 12V<br>i 10V see 10V | oe<br>80 80<br>8V 8V<br>aN 7V SN 7V<br>60 60<br>6V 6V<br>5V 5V<br>40 40<br>20 20<br>DACRE acm<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>V CE , COLLECTOR-EMITTER VOLTAGE [V] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>P tot I C<br>I C I C<br>**----- End of picture text -----**<br>
Figure 3. Typical ( _T_ vj=25°C)
Figure 4. Typical ( _T_ vj=150°C)
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Datasheet
2019-10-18
## AIGB40N65F5
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**----- Start of picture text -----**<br>
120 2.50<br>Tvj = 25°C IC = 10A<br>Tvj = 150°C IC = 20A<br>2.25 IC = 40A<br>100<br>z<br>s<br>Ee 2.00<br>_ |<br>80<br>Pa rE<br>im <x 1.75<br>oe ep)<br>Ooa 60 fFEe 1.50 uo"<br>ua 5FE 1.25 f=<br>40<br>: pe fo<br>1.00<br>20<br>0.75<br>7<br>BO4nEe Eas<br>0 0.50<br>4 5 6 7 8 9 10 0 25 50 75 100 125 150 175<br>V GE , GATE-EMITTER VOLTAGE [V] T vj , JUNCTION TEMPERATURE [°C]<br>Figure 5. Typical transfer characteristic Figure 6. Typical collector-emitter saturation voltage as<br>( V CE=20V) a function of junction temperature<br>( V GE=15V)<br>1000 a a 1000 a SS SS ES ES<br>| 1 td(off) a a ee ee ee | td(off) a ee ee ee ee en<br>I tf p o | tf ee ee = eee eee<br>td(on) td(on)<br>tr tr<br>F p FE be<br>| a ee ee ee ee | fp,<br>z | Ta =<br>— 100 a cs 100 a<br>ip) Pe a es ee<br>uw a ee ee ee eee ip) a eseee<br>= a a eh he a a en<br>- poa edee ee ee = aa eeee eeee eeaeee e ee eee<br>Q pgs | | __ Q eeee<br>so are ne eelrea<br>Een ee7 E eea 7<br>2) 10 a 2) 10 a 2 es<br>- a a - Sa A<br>po po A<br>a a a 72 a<br>a es ee ee ys a ee ee ee ee<br>a p e | |<br>a Po | ot tT | dT<br>1 1<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>I C<br>CEsat<br>V<br>t t<br>**----- End of picture text -----**<br>
Figure 7.
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**----- Start of picture text -----**<br>
T vj =150°C, V CE=400V,<br>**----- End of picture text -----**<br>
Figure 8. Typical **resistor**
_T_ vj =150°C, _V_ CE=400V,
**==> picture [78 x 19] intentionally omitted <==**
**----- Start of picture text -----**<br>
V GE =15/0V, r G=15 Ω<br>Figure E)<br>**----- End of picture text -----**<br>
_V_ GE =15/0V, _I_ C Figure E)
Datasheet
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AIGB40N65F5
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**----- Start of picture text -----**<br>
1000 aa 5.5<br>| 1 ttd(off)f a aee aee ee typ.min.<br>I td(on) a eeee ee ee eee _ 5.0 = max.<br>tr<br>p e <x 4.5<br>rr —7 w sa<br>e) See<br>2f | || 4§ ~.<br>= 100 a es a 4.0 EE —_| ~<br>ip) a i ~.<br>im poa a a (e) — SBA .<br>- es ee Wy 3.5 we \<br>= aa ~<br>3.0<br>e e<br>= ee 4 = ~ —_<br>S2)7 10 a eS Ww:7 2.5 ~ ~~ \ \Y<br>po wi XN<br>es \<br>a i ee ee ro) 2.0<br>1.5<br>1 1.0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>T vj , JUNCTION TEMPERATURE [°C] T vj , JUNCTION TEMPERATURE [°C]<br>t<br>GE(th)<br>V<br>**----- End of picture text -----**<br>
Figure 9.
_V_ CE =400V, _V_ GE=15/0V,
Figure 10.
( _I_ C=0.4mA)
_I_ C =20A, _r_ G=15 E)
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**----- Start of picture text -----**<br>
15 2.0<br>Eoff Eoff<br>Eon Eon<br>Ets Ets<br>12 1.6<br>n n ra<br>Lu Lu ?<br>7) 7) 7<br>o ep) ”<br>e) e) “<br>—! 9 —! 1.2<br>> > a<br>im “ m7 oo a7<br>Zz v4 Zz ¢<br>Lu ¢ Ww pod co<br>oOZz 6 ¢ a (VU)Z 0.8 ° o -7<br>= “ 7 = o*<br>oO 7 7 oO Poe “7<br>E “ , E -<br>a“a7<br>a<br>“ - 7 —<br>3 7 0.4 |<br>a a><br>-t-_<br>“Lo -nee a —_—<br>0 0.0<br>0 20 40 60 80 100 120 5 15 25 35 45 55 65 75 85<br>I C , COLLECTOR CURRENT [A] r G , GATE RESISTOR [ Ω ]<br>Figure 11. Typical switching energy losses as a Figure 12. Typical switching energy losses as a<br>function of collector current function of gate resistor<br>(inductive load, T vj =150°C, V CE=400V, (inductive load, T vj =150°C, V CE=400V,<br>V GE =15/0V, r G=15 Ω ,Dynamic test circuit in V GE =15/0V, I C =20A, Dynamic test circuit in<br>Figure E) Figure E)<br>E E<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Datasheet<br>**----- End of picture text -----**<br>
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AIGB40N65F5
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**----- Start of picture text -----**<br>
1.2 1.4<br>Eoff Eoff<br>Eon Eon<br>Ets 1.2 Ets<br>oy oy<br>0.9<br>on on 1.0<br>Ww Ww<br>7) 7)<br>o —-| oO<br>—! "7 o o<br>> -" > 0.8 ?<br>na na “7<br>Ww 0.6 > Ww Prat<br>) -- _-— ) 0.6 oe -<br>Zz _ =_— Zz oe -<br>= _ L “7 -<br>Ee — F Ee 0.4 7“ a “ -<br>a 0.3 3 =<br>0.2<br>ee - ————<br>0.0 0.0<br>25 50 75 100 125 150 175 200 250 300 350 400 450 500<br>T vj , JUNCTION TEMPERATURE [°C] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 13. Typical switching energy losses as a Figure 14. Typical switching energy losses as a<br>function of junction temperature function of collector emitter voltage<br>(inductive load, V CE =400V, V GE=15/0V, (inductive load, T vj =150°C, V GE=15/0V,<br>I C =20A, r G=15 ,Dynamic test circuit in I C =20A, r G=15 ,Dynamic test circuit in<br>Figure E) Figure E)<br>16<br>——s-rnv V CC [ Cies 7<br>—_— V CC = / Co(er)<br>14 , 1E+4 I Coes<br>Cres<br>a<br>12 fi a<br>=. | a a a<br>Ww<br>1000<br>FE 10 A 2 EE<br>O> uw SEa ss<br>Vs 2 a ee ee ee ee eee eee<br>ke 8 —< pot tT<br>100<br>E _/ S of‘<br>i oO EEE<br>6 O a<br>Mux [__ <- oSSRSa ee re re he ee ae ee ree<br>o RO<br>4<br>10<br>aa<br>2 a<br>0 fit, td 1 Pot | |<br>0 20 40 60 80 100 0 50 100 150 200 250 300 350 400<br>Q GE , GATE CHARGE [nC] V CE , COLLECTOR-EMITTER VOLTAGE [V]<br>Figure 15. Typical gate charge Figure 16. Typical capacitance as a function of<br>( I C=40A) collector-emitter voltage<br>E E<br>C<br>GE<br>V<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
Figure 16.<br>( V GE<br>**----- End of picture text -----**<br>
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Datasheet
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AIGB40N65F5
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**----- Start of picture text -----**<br>
1<br>PFE EEE CHEE<br>EET See<br>PT TTermET<br>= RD ot<br>=<br>Ss EE ae et<br>8 D = 0.5<br>0.2<br><xZz ans|A<br>EE 0.1<br>0.1<br>i2 per]eZ)07 Ala 0.05 MAI| |<br>0.02<br>z Ea aH<br>0.01<br>ML, or eo ema<br>y single pulse<br>uw {2aeA<br>m7 Fa<br>0.01<br>% SeVs aE<br>z Cat Rp 1<br>s | _ I<br>SRE GH<br>° a A ||<br>A<br>i: 1 2 3 4 5 6<br>ri[K/W]: 5.5E-3 0.142332 0.228875 0.212006 0.017599 2.1E-3<br>τ i[s]: 1.3E-5 2.7E-4 1.8E-3 8.8E-3 0.13885 2.05094<br>0.001<br>1E-6 1E-5 1E-4 0.001 0.01 0.1 1<br>t p , PULSE WIDTH [s]<br>c)th(j-<br>Z<br>**----- End of picture text -----**<br>
> Figure 17. IGBT ( _D_ = _t_ p/T)
10
Datasheet
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AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Package Drawing PG-TO263-3**
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|||MIN|MAX|MIN|MAX|
|---|---|---|---|---|---|
|||4.30|4.57|0.169|0.180|
|||0.00<br>|0.25<br>|0.000<br>|0.010<br>|
|||0.65<br>0.95|1.15<br>0.85|0.026<br>0.037|0.033<br>0.045|
|||0.33<br>|0.65<br>|0.013<br>|0.026<br>|
|||8.51<br>1.17|9.45<br>1.40|0.335<br>0.046|0.372<br>0.055|
|||7.10<br>9.80|7.90<br>10.31|0.280<br>0.386|0.311<br>0.406|
|||8.60<br>2.54<br>6.50||0.339<br>0.256<br>0.100||
|||5.08||0.200||
|||2||2||
|||14.61|15.88|0.575|0.625|
|||2.29|3.00|0.090|0.118|
|||0.70|1.60|0.028|0.063|
|||1.00|1.78|0.039|0.070|
|||930<br>16.05|16.25<br>950|0.632<br>0366|0.640<br>0374|
|||.<br>4.50<br>|.<br>4.70<br>|.<br>0.177<br>|.<br>0.185<br>|
|||10.70<br>|10.90<br>|0.421<br>|0.429|
|||3.65|3.85|0.144|0.152|
|||1.25|1.45|0.049|0.057|
|atasheet||||||
Datasheet
V�2.2 2019-10-18
AIGB40N65F5
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## High�speed�switching�series�fifth�generation
## **Testing Conditions**
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**----- Start of picture text -----**<br>
V GE (t)<br>90% V GE<br>10% V GE t<br>I C (t)<br>90% I C 90% I C<br>10% I C 10% I C<br>t<br>V CE (t)<br>t<br>t d(off) t f t d(on) t r<br>Figure A.<br>V GE (t)<br>90% V GE<br>10% V GE<br>t<br>I C (t)<br>2% I C t<br>V CE (t)<br>t 2 t 4<br>E off [=] V CE x I C x d t E on [=] V CE x I C x d t<br>t 1 t 3 2% V CE<br>t<br>t 1 t 2 t 3 t 4<br>Figure B.<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
I,V<br>dI F /dt Qt rrrr== Qt aa++ tQ b b<br>a b<br>Q a Q b<br>dI<br>Figure C. Definition of diode switching<br>characteristics<br>**----- End of picture text -----**<br>
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t<br>**----- End of picture text -----**<br>
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Figure D.
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**----- Start of picture text -----**<br>
CC<br>**----- End of picture text -----**<br>
Figure E. **Dynamic test circuit** Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor C ,r (only for ZVT switching)
12
V�2.2 2019-10-18
Datasheet
AIGB40N65F5
**==> picture [86 x 38] intentionally omitted <==**
## High�speed�switching�series�fifth�generation
## **Revision�History**
AIGB40N65F5
## **Revision:�2019-10-18,�Rev.�2.2**
## Previous Revision
|Revision|Date|Subjects(major changes since last revision)|
|---|---|---|
|2.1|2019-06-07|Final Datasheet|
|2.2|2019-10-18|updated fig.15|
13
V�2.2 2019-10-18
Datasheet
## **Trademarks**
## party.
## **Warnings**
Updated at June 9, 2026
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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