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AIDW10S65C5XKSA1
Silicon Carbide Schottky Diode, CoolSiC 5G 650V, Single, 650 V, 10 A, 15 nC, TO-247
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- Manufacturer: INFINEON
- Product type: Silicon Carbide Schottky Diodes
- No. of Pins: 3 Pin
- Product Range: CoolSiC 5G 650V
- Qualification: AEC-Q101
- Diode Mounting: Through Hole
- Diode Case Style: TO-247
- Diode Configuration: Single
- Average Forward Current: 10A
- Total Capacitive Charge: 15nC
- Operating Temperature Max: 175°C
- Repetitive Peak Reverse Voltage: 650V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.38 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
AIDW10S65C5 ## CoolSiC™ Automotive Schottky Diode 650V G5 ## 650V/10A Silicon Carbide Schottky Diode in TO247-3 ## Features - Revolutionary semiconductor material - Silicon Carbide - Benchmark switching behavior - No reverse recovery/ No forward recovery - Temperature independent switching behavior - High surge current capability - Pb-free lead plating; RoHS compliant - Junction Temperature range from -40°C to 175°C - System efficiency improvement over Si diodes - System cost / size savings due to reduced cooling requirements - Enabling higher frequency / increased power density solutions - Higher system reliability due to lower operating temperatures - Reduced EMI ## Potential Applications - Traction inverter - Booster / DCDC Converter - On board Charger / PFC ## Product Validation “Qualified for Automotive Applications. Product Validation according to AEC-Q100/101” ## Description The 5th Generation CoolSiC™Automotive Schottky Diode represents Infineon leading edge technology for Silicon Carbide Schottky Barrier diodes. Thanks to a compact design and a technology based on thin wafers, this family of products shows improved efficiency over all load conditions resulting from both its thermal characteristics and low figure of merit (Qc x Vf). This product family has been designed to complement Infineon’s IGBT and CoolMOS™portfolio. This ensures meeting the most stringent application requirements in the 650V voltage class. |Product Information|Product Information|Parameter|Value/Unit|Pin|Definition| |---|---|---|---|---|---| |OrderingCode|AIDW10S65C5|VDC,max|650 V|Pin 2, case|Cathode| |Marking|AD1065C5|IF; TC< 134 °C|10 A|Pin 3|Anode| |Package|PG-TO247-3-41|QC; VR= 400 V|15 nC||| |SP Number|SP001725156|EC; VR= 400 V|3.5 μJ||| |||Tj,max|175 °C||| Datasheet Please read the Important Notice and Warnings at the end of this document Page 1 of 11 V3.0 www.infineon.com 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Table of Contents ## Table of Contents |Table of Contents|| |---|---| |Features…………………………………………………………………………………………………………..……|1| |Potential Applications………………………………………………………………………………………..………|1| |Product Validation………………………………………………..…………………………………………………|1| |Description……………………………………………..……………………………………………………………|1| |Table of Contents……………………………………………..………………………………………………………|2| |1 Maximum Ratings…………………………………………..…………………………………………………|3| |2 Thermal Characteristics………………………………………..……………………………………………|4| |3 Electrical Characteristics……………………………………………..………………………………………|5| |4 Electrical Characteristics Diagrams…………………………………………..……………………………|6| |5 Package Outlines………………………………………………………………………..……………………|9| |Revision History………………………………………………………………………..……………………………|10| V3.0 26.11.2018 Page 2 of 11 Datasheet CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Maximum Ratings |Maximum ratings1<br>Table 1|||| |---|---|---|---| |Parameter|Symbol<br>~~|~~|Value<br>~~|~~|Unit| |Repetitive peak reverse voltage|VRRM|650|V| |Continuous forward current for RthJC,max<br>TC= 134 °C, D=1|IF<br>~~|~~|10<br>~~|~~|A| |Surge non-repetitive forward current,<br>sine halfwave<br>TC= 25°C, tp=10ms<br>TC= 150°C, tp=10ms|IF,SM|58<br>46|A| |Non-repetitive peak forward current<br>TC= 25°C, tp=10μs|IF,max|431|A| |i²t value<br>TC= 25°C, tp=10ms<br>TC= 150°C, tp=10ms|∫i_2_ dt|10.5<br>16.6|A2s| |Diode dv/dt ruggedness<br>VR=0...480V|dv/dt|100|V/ns| |Power dissipation<br>TC= 25°C|Ptot|65|W| |Operating temperature|Tj<br>~~Pf~~|-40…175<br>~~Pf~~|°C| |Storage temperature|Tstg|-55…150|°C| |ESD<br>Human body model, R= 1.5 kΩ, C = 100 pF<br>Charged device model|~~P|~~|8<br>2<br>~~P|~~|kV| |Soldering temperature,<br>wavesoldering only allowed at leads,<br>1.6mm (0.063 in.) from case for 10 s|Tsold|260|°C| |MountingTorque (M3 and M4 screws)|~~ee~~|70<br>~~ee~~|Ncm| V3.0 Page 3 of 11 Datasheet 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Thermal Characteristics 2 Thermal Characteristics |Table 2|Thermal Characteristics1|Thermal Characteristics1|||||||| |---|---|---|---|---|---|---|---|---|---| ||||||Values||||| |Parameter|||Symbol|||||Unit|Note/Test condition| |||||Min.|Typ.||Max.||| |Thermal resistance, junction–case2|||RthJC|-|1.8||2.3|K/W|| |Thermal resistance, junction-ambient2|||RthJA|-|-||62|K/W|| V3.0 26.11.2018 Page 4 of 11 Datasheet CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Electrical Characteristics ## 3 Electrical Characteristics |Static Characteristics<br>Table 3||||||| |---|---|---|---|---|---|---| |Parameter|Symbol<br>~~eee~~|Values<br>~~eee~~|||Unit<br>~~eee~~|Note/Test condition| |||Min.<br>~~eee~~<br>~~ft~~|Typ.<br>~~eee~~<br>~~ft|~~|Max.<br>~~eee~~<br>~~|~~||| |DC blocking voltage|VDC<br>~~FT~~|650<br>~~ft~~<br>~~FT~~<br>~~td~~|-<br>~~ft |~~<br>~~FT~~<br>~~td~~|-<br>~~|~~<br>~~FT~~<br>~~td~~|V|Tj= 25°C, IR= 0.06 mA| |Diode forward voltage3|VF<br>~~HE~~|-<br>~~td~~<br>~~HE~~<br>~~eft~~|1.5<br>~~td~~<br>~~HE~~<br>~~eftft~~|1.7<br>~~td~~<br>~~HE~~<br>~~ft~~||Tj= 25°C, IF= 10 A| |||-<br>~~HE~~<br>~~eft~~|1.8<br>~~HE~~<br>~~eftft~~|2.1<br>~~HE~~<br>~~ft~~||Tj= 150°C, IF= 10 A| |Reverse current|IR<br>~~HEE~~|-<br>~~eft~~<br>~~HEE~~<br>~~ft~~|2<br>~~eft ft~~<br>~~HEE~~<br>~~fti~~|60<br>~~ft~~<br>~~HEE~~<br>~~i~~|µA<br>~~HEE~~|VR= 650 V, Tj= 25 °C| |||-<br>~~HEE~~<br>~~ft~~|12<br>~~HEE~~<br>~~fti~~|-<br>~~HEE~~<br>~~i~~||VR= 650 V, Tj= 150 °C| |Parameter|Symbol<br>~~eee~~|Values<br>~~eee~~|Values<br>~~eee~~|Values<br>~~eee~~|Unit<br>~~eee~~|Note/Test condition| |---|---|---|---|---|---|---| |||Min.<br>~~eee~~|Typ.<br>~~eee~~|Max.<br>~~eee~~||| |Total capacitive charge|QC|-|15|-|nC|VR= 400 V, di/dt = 200 A/µs,<br>IF≤ IF,MAX, Tj= 150 °C| |Total capacitance|C|-<br>~~| ~~<br>~~[|~~|303<br> ~~|~~<br>~~[| f~~|-<br>~~|~~<br>~~f~~|pF|VR= 1 V, f = 1 MHz| |||-<br>~~[|~~<br>~~P|~~|40<br>~~[| f~~<br>~~P|ft~~|-<br>~~f~~<br>~~ft~~||VR= 300 V, f = 1 MHz| |||-<br>~~[|~~<br>~~P|~~|39<br>~~[| f~~<br>~~P|ft~~|-<br>~~f~~<br>~~ft~~||VR= 600 V, f = 1 MHz| ## Footnotes: > 1 The parameter is not subject to production test- verified by design/characterization. > 2 Rth,JC defined as per JESD-51-14. Rth,JA defined as per JESD-51-2. > 3 Only the value at 25°C is subject to production test. The value at 150°C is only verified by design/characterization. V3.0 Page 5 of 11 Datasheet 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Electrical Characteristics Diagrams **==> picture [313 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> 4 Electrical Characteristics Diagrams<br>**----- End of picture text -----**<br> Figure 1 (LEFT) Power dissipation; Ptot= f(TC); RthJC,max (RIGHT) Diode forward current; IF= f(TC); Tj≤ 175 °C; RthJC,max; parameter: D=duty cycle Figure 2 (LEFT) Typical forward characteristic; IF= f(VF); tP=200 μs; parameter:Tj (RIGHT) Typical forward characteristics in surge current; I F= f(VF); tP=200 μs; parameter:Tj V3.0 Page 6 of 11 Datasheet 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 ## Electrical Characteristics Diagrams Figure 3 (LEFT) Typical capacitive charge versus current slope (only capacitive charge, guaranteed by design); QC= f(diF/dt); Tj=150°C; VR=400V; IF **≤ IF,max** ## **(RIGHT) Typical reverse current versus reverse voltage; IR= f(VR);parameter: Tj** |“|“|1E-3<br>ee||1E0| |---|---|---|---|---| |**i**|1|2|3|4| |**ri [K/W]**|9.13E-02|8.68E-01|5.67E-01|2.44E-01| |**Ti [s]**|3.66E-06|3.70E-04|2.05E-03|9.34E-03| Figure 4 (LEFT) Max. Transient thermal impedance; ZthJC= f(tP); parameter:D=tP/T (RIGHT) Typ. Capacitance vs. Reverse voltage; C= f(VR); Tj=25°C; f=1 MHz V3.0 Page 7 of 11 Datasheet 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Electrical Characteristics Diagrams Figure 5 Typical capacitance stored energy; EC= f(VR) |A =|-9.2E-04|[V/°C]| |---|---|---| |B =|1.0E+00|[V]| |C =|1.3E-06|[**Ω/(°C)2**]| |D =|7.3E-05|[**Ω/°C**]| |E =|4.1E-02|[**Ω**]| Figure 6 Simplified forward characteristics model VF= f(IF); **==> picture [132 x 13] intentionally omitted <==** **----- Start of picture text -----**<br> -40°C < Tj <175°C; IF< 20 A<br>**----- End of picture text -----**<br> V3.0 Page 8 of 11 Datasheet 26.11.2018 CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 ## Package Outlines **==> picture [191 x 16] intentionally omitted <==** **----- Start of picture text -----**<br> 5 Package Outlines<br>**----- End of picture text -----**<br> Figure 6 Package outline of PG-TO247-3-41 leaded (Dimensions in mm) V3.0 26.11.2018 Page 9 of 11 Datasheet CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 Revision History ## Revision History |Document<br>Version|Date of Release|Description of changes| |---|---|---| |V3.0|26.11.2018<br>~~po~~|1st release of Data Sheet| ||~~po~~|| ||~~po~~|| ||~~Pp~~|| V3.0 26.11.2018 Page 10 of 11 Datasheet CoolSiC™ Automotive Schottky Diode 650V G5 650V/10A Silicon Carbide Schottky Diode in TO247-3 ## Trademarks All referenced product or service names and trademarks are the property of their respective owners. ||IMPORTANT NOTICE|| |---|---|---| |Edition 2017-07-07||| ||The information given in this document shall in no event|For<br>further<br>information<br>on<br>the<br>product,| |Published by|be regarded as a guarantee of conditions or characteristics|be regarded as a guarantee of conditions or characteristics<br>technology, delivery terms and conditions and| |Infineon Technologies AG|(“Beschaffenheitsgarantie”) .|prices please contact your nearest Infineon| |81726 München, Germany||Technologies office(www.infineon.com).| ||With respect to any examples, hints or any typical values|| |© 2017 Infineon Technologies AG.|stated herein and/or any information regarding the|WARNINGS| |All Rights Reserved.|application of the product, Infineon Technologies hereby|Due to technical requirements products may| ||disclaims any and all warranties and liabilities of any kind,|contain dangerous substances. For information| |Do you have a question about this|including<br>without<br>limitation<br>warranties<br>of<br>non-|on the types in question please contact your| |document?|infringement of intellectual property rights of any third|nearest Infineon Technologies office.| |Email:erratum@infineon.com|party.|| |Document reference|In addition, any information given in this document is|Except as otherwise explicitly approved by| ||subject to customer’s compliance with its obligations|Infineon Technologies in a written document| ||stated in this document and any<br>applicable legal|signed by authorized representatives of Infineon| ||requirements,<br>norms<br>and<br>standards<br>concerning|Technologies, Infineon Technologies’ products| ||customer’s products and any use of the product of|may not be used in any applications where a| ||Infineon Technologies in customer’s applications.|failure of the product or any consequences of| |||the use thereof can reasonably be expected to| ||The data contained in this document is exclusively|result in personal injury.| ||intended<br>for<br>technically<br>trained<br>staff.<br>It<br>is<br>the|| ||responsibility of customer’s technical departments to|| ||evaluate the suitability of the product for the intended|| ||application<br>and<br>the<br>completeness<br>of<br>the<br>product|| ||information given in this document with respect to such|| ||application.|| V3.0 Page 11 of 11 Datasheet 26.11.2018
Updated at February 9, 2023
Infineon Technologies is a globally recognized leader in semiconductor solutions, renowned for driving innovation in power management, energy efficiency, and modern mobility. With a strong legacy of engineering excellence, the company provides highly reliable components designed to meet the rigorous demands of industrial, automotive, and advanced commercial applications. The core of our Infineon portfolio is centered on their industry-leading discrete semiconductors. We offer an extensive selection of single and dual MOSFETs, alongside a robust range of single IGBTs and advanced IGBT modules. These flagship power transistors are essential for high-efficiency power conversion and motor control, providing engineers with superior thermal performance and minimized switching losses. Beyond advanced field-effect transistors, the selection includes a comprehensive array of diodes and rectifiers, heavily featuring Schottky diodes, as well as fast-recovery and RF/PIN diodes. This power foundation is further supported by bipolar transistors, intelligent power modules, and thyristor SCR modules, delivering the critical building blocks required for complex power system designs. To support broader system integration, the portfolio also encompasses specialized solutions such as solid-state relays, AC/DC LED driver ICs, and Bluetooth communications modules. From high-power industrial rectifiers to wireless connectivity adapters, Infineon equips designers with the precision components needed to build efficient, scalable, and fully connected electronic systems.
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