AFV10700HSR5
RF FET Transistor, LDMOS, 105 VDC, 526 W, 1.03 GHz, 1.09 GHz, NI-780S
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:105VDC; Continuous Drain Current Id:-; Power Dissipation Pd:526W; Operating Frequency Min:1.03GHz; Operating Frequency Max:1.09GHz; RF Transistor Case:NI
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 4Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 526W
- Transistor Mounting: Flange
- Transistor Case Style: NI-780S
- Operating Frequency Max: 1.09GHz
- Operating Frequency Min: 1.03GHz
- Drain Source Voltage Vds: 105VDC
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 592.44 € |
| Current stock | 10+ |
| Lead time | 30 days |
Updated at April 10, 2026
