Image not available
Illustrative purposes only
AFV10700HR5
RF FET Transistor, LDMOS, 105 VDC, 526 W, 1.03 GHz, 1.09 GHz, NI-780H
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Channel Type: N Channel
- Power Dissipation: 526W
- Transistor Mounting: Flange
- Transistor Case Style: NI-780H
| Delivery and price | |
|---|---|
| Units per pack | 1 |
| Price | 483.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: AFV10700H Rev. 0, 05/2017 ## **RF Power LDMOS Transistors** ## **AFV10700H AFV10700HS** ## N--Channel Enhancement--Mode Lateral MOSFETs These RF power transistors are designed for pulse applications operating at 1030 to 1090 MHz and can be used over the 960 to 1215 MHz band at reduced power. These devices are suitable for use in defense and commercial pulse applications with large duty cycles and long pulses, such as IFF, secondary surveillance radars, ADS--B transponders, DME and other complex pulse chains. **==> picture [503 x 453] intentionally omitted <==** **----- Start of picture text -----**<br> 1030–1090 MHz, 700 W PEAK, 52 V<br>pulse chains.<br>AIRFAST RF POWER LDMOS<br>Typical Performance: In 1030–1090 MHz reference circuit, IDQ(A+B) = 100 mA TRANSISTORS<br>Frequency VDD Pout Gps η D<br>(MHz) [(1)] Signal Type (V) (W) (dB) (%)<br>1030 Pulse 50 800 Peak 17.5 52.1<br>1090 (128 μsec, 700 Peak 19.0 56.1<br>10% Duty Cycle)<br>1030 52 850 Peak 17.5 51.7<br>NI--780H--4L<br>1090 770 Peak 19.2 56.1 AFV10700H<br>Typical Performance: In 1030 MHz narrowband production test fixture,<br>IDQ(A+B) = 100 mA<br>Frequency VDD Pout Gps η D<br>(MHz) Signal Type (V) (W) (dB) (%)<br>1030 [(2)] Pulse 50 730 Peak 19.2 58.5<br>NI--780S--4L<br>(128 μsec, AFV10700HS<br>10% Duty Cycle)<br>S OEH S<br>Narrowband Load Mismatch/Ruggedness<br>Frequency Pin Test<br>(MHz) Signal Type VSWR (W) Voltage Result<br>1030 [(2)] Pulse > 20:1 at 17.2 Peak 50 No Device Gate A 3 1 Drain A<br>(128 μsec, All Phase (3 dB Degradation<br>10% Duty Cycle) Angles Overdrive)<br>1. Measured in 1030–1090 MHz reference circuit (page 5). Gate B 4 2 Drain B<br>2. Measured in 1030 MHz narrowband production test fixture (page 9).<br>Features<br>• Internally input and output matched for broadband operation and ease of use (Top View)<br>• Device can be used in a single--ended, push--pull or quadrature configuration Note: The backside of the package is the<br>source terminal for the transistor.<br>• Qualified up to a maximum of 55 VDD operation<br>oe • High ruggedness, handles > 20:1 VSWR Figure 1. Pin Connections<br>• Integrated ESD protection with greater negative gate--source voltage range<br>for improved Class C operation and gate voltage pulsing<br>• Recommended drivers: MRFE6VS25N (25 W) or MRF6V10010N (10 W)<br>• Included in NXP product longevity program with assured supply for a<br>minimum of 15 years after launch E<br>**----- End of picture text -----**<br> **AFV10700H AFV10700HS** © 2017 NXP B.V. RF Device Data NXP Semiconductors 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**||||| |---|---|---|---|---|---| |**Rating**||**Symbol**|**Value**||**Unit**| |Drain--Source Voltage||VDSS|–0.5, +105||Vdc| |Gate--Source Voltage||VGS|–6.0, +10||Vdc| |Operating Voltage||VDD|55, +0||Vdc| |Storage Temperature Range||Tstg|–65 to +150||°C| |Case Operating Temperature Range||TC|–55 to +150||°C| |Operating Junction Temperature Range **(1,2)**||TJ|–55 to +225||°C| |Total Device Dissipation @ TC= 25°C<br>Derate above 25°C||PD|526<br>2.63||W<br>W/°C| |**Table 2. Thermal Characteristics**|||||| |**Characteristic**||**Symbol**|**Value (2,3)**||**Unit**| |Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 75°C, 730 W Peak, 128μsec Pulse Width,<br>10% Duty Cycle, 50 Vdc, IDQ(A+B)= 100 mA, 1030 MHz||ZθJC|0.030||°C/W| |**Table 3. ESD Protection Characteristics**|||||| |**Test Methodology**|||**Class**||| |Human Body Model (per JESD22--A114)|||2, passes 2000 V||| |Charge Device Model (per JESD22--C101)|||C3, passes 2000 V||| |**Table 4. Electrical Characteristics** (TA= 25°C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Off Characteristics (4)**|||||| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|1|μAdc| |Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 10μA)|V(BR)DSS|105|—|—|Vdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 50 Vdc, VGS= 0 Vdc)|IDSS|—|—|1|μAdc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 105 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|μAdc| |**On Characteristics**|||||| |Gate Threshold Voltage **(4)**<br>(VDS= 10 Vdc, ID= 260μAdc)|VGS(th)|1.3|1.8|2.3|Vdc| |Gate Quiescent Voltage<br>(VDD= 50 Vdc, IDQ(A+B)= 100 mAdc, Measured in Functional Test)|VGS(Q)|1.6|2.1|2.6|Vdc| |Drain--Source On--Voltage **(4)**<br>(VGS= 10 Vdc, ID= 2.6 Adc)|VDS(on)|—|0.28|—|Vdc| |**Dynamic Characteristics (4,5)**|||||| |Reverse Transfer Capacitance<br>(VDS= 50 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|Crss|—|1.16|—|pF| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955 _, Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 4. Each side of device measured separately. 5. Part internally matched both on input and output. (continued) **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 2 **Table 4. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---|---|---|---|---| |**Functional Tests**(In NXP Narrowband Production Test Fixture, 50 ohm system) VDD= 50 Vdc, IDQ(A+B)= 100 mA, Pout= 730 W Peak<br>(73 W Avg.), f = 1030 MHz, 128μsec Pulse Width, 10% Duty Cycle|||||||||||| |Power Gain|||||Gps|18.0||19.2||21.0|dB| |Drain Efficiency|||||ηD|54.5||58.5||—|%| |Input Return Loss|||||IRL|—||–15||–9|dB| |**Load Mismatch/Ruggedness**(In NXP Narrowband Production Test Fixture, 50 ohm system) IDQ(A+B)||||||||= 100 mA|||| |**Frequency**<br>**(MHz)**|**Signal**<br>**Type**||**VSWR**|**Pin**<br>**(W)**||**Test Voltage, VDD**||||**Result**|| |1030|Pulse<br>(128μsec,<br>10% Duty Cycle)||> 20:1 at All Phase Angles|17.2 Peak<br>(3 dB Overdrive)|||50|||No Device Degradation|| |**Table 5. Ordering Information**|||||||||||| |**Device**||**Tape and Reel Information**||||||||**Package**|| |AFV10700HR5||R5 Suffix = 50 Units, 56 mm Tape Width, 13--inch Reel|||||NI--780H--4L||||| |AFV10700HSR5||R5 Suffix = 50 Units, 32 mm Tape Width, 13--inch Reel|||||NI--780S--4L||||| **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 3 ## **TYPICAL CHARACTERISTICS** **==> picture [496 x 237] intentionally omitted <==** **----- Start of picture text -----**<br> 100 1.11<br>Measured with ±30 mV (rms) ac @ 1 MHz VDD = 50 Vdc<br>VGS = 0 Vdc 1.08<br>IDQ(A+B) = 100 mA<br>1.05<br>500 mA<br>1.02<br>10 1000 mA<br>Crss 0.99<br>0.96<br>0.93<br>1 0.90<br>0 10 20 30 40 50 –75 –50 –25 0 25 50 75 100<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) TC, CASE TEMPERATURE (°C)<br>Note: Each side of device measured separately. IDQ (mA) Slope (mV/ ° C)<br>Figure 2. Capacitance versus Drain--Source Voltage 100 –2.73<br>500 –2.39<br>1500 –2.09<br>GS(Q)<br>NORMALIZED V<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br> **Figure 3. Normalized VGS versus Quiescent Current and Case Temperature** **==> picture [237 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 10 [9]<br>VDD = 50 Vdc<br>ID = 19.67 Amps<br>10 [8]<br>10 [7]<br>24.39 Amps<br>10 [6] 28.40 Amps<br>10 [5]<br>10 [4]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.nxp.com/RF/calculators.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br> **Figure 4. MTTF versus Junction Temperature – Pulse** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 4 **1030–1090 MHz REFERENCE CIRCUIT – 2.0** ″ × **3.0** ″ **(5.1 cm** × **7.6 cm)** **Table 6. 1030–1090 MHz Performance** (In NXP Reference Circuit, 50 ohm system) IDQ(A+B) = 100 mA |**Frequency**<br>**(MHz)**|**Signal Type**|**VDD**<br>**(V)**|**Pout**<br>**(W)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**| |---|---|---|---|---|---| |1030|Pulse<br>(128μsec, 10% Duty Cycle)|50|800 Peak|17.5|52.1| |1090|||700 Peak|19.0|56.1| |1030||52|850 Peak|17.5|51.7| |1090|||770 Peak|19.2|56.1| **NOTE:** Size of the matching area: 1.3″ × 2.6″ (3.3 cm × 6.6 cm) **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 5 ## **1030–1090 MHz REFERENCE CIRCUIT – 2.0** ″ × **3.0** ″ **(5.1 cm** × **7.6 cm)** **==> picture [409 x 287] intentionally omitted <==** **----- Start of picture text -----**<br> C12*<br>C17 C18<br>C5<br>C8*<br>C13<br>C6* C7*<br>C14* C15<br>C16*<br>C2*<br>R1<br>Q1<br>C1*<br>C11*<br>C3*<br>C9* C10*<br>C4*<br>D85937<br>**----- End of picture text -----**<br> *C1, C2, C3, C4, C6, C7, C8, C9, C10, C11, C12, C14 and C16 are mounted vertically. **Figure 5. AFV10700H Reference Circuit Component Layout – 1030–1090 MHz** **Table 7. AFV10700H Reference Circuit Component Designations and Values – 1030–1090 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1|1.5 pF Chip Capacitor|ATC800B1R5BT500XT|ATC| |C2, C8, C14|39 pF Chip Capacitor|ATC800B390JT500XT|ATC| |C3, C4|4.3 pF Chip Capacitor|ATC800B4R3CT500XT|ATC| |C5, C15|2.2μF Chip Capacitor|C3225X7R2A225K230AB|TDK| |C6, C12|1000 pF Chip Capacitor|ATC800B102JT50XT|ATC| |C7|100 pF Chip Capacitor|ATC800B101JT500XT|ATC| |C9|4.7 pF Chip Capacitor|ATC800B4R7CT500XT|ATC| |C10, C11|3.3 pF Chip Capacitor|ATC800B3R3CT500XT|ATC| |C13|1.0μF Chip Capacitor|GRM31CR72A105KA01L|Murata| |C16|510 pF Chip Capacitor|ATC800B511JT200XT|ATC| |C17, C18|470μF, 63 V Electrolytic Capacitor|MCGPR63V477M13X26--RH|Multicomp| |Q1|RF High Power LDMOS Transistor|AFV10700H|NXP| |R1|10Ω, 1/8 W Chip Resistor|RK73H2ATTD10R0F|KAO Speer| |PCB|Rogers RO3010 0.025″,εr= 11.2|D85937|MTL| **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 6 ## **TYPICAL CHARACTERISTICS – 1030–1090 MHz REFERENCE CIRCUIT** **==> picture [257 x 388] intentionally omitted <==** **----- Start of picture text -----**<br> 21 70<br>20 1090 MHz 1090 MHz 60<br>Gps ηD<br>19 1030 MHz 50<br>1030 MHz<br>18 40<br>17 30<br>16 VDD = 50 Vdc, IDQ(A+B) = 100 mA 20<br>Pulse Width = 128 μsec, Duty Cycle = 10%<br>15 10<br>0 100 200 300 400 500 600 700 800 900 1000<br>Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 6. Power Gain and Drain Efficiency versus<br>Output Power – 50 V<br>21 70<br>20 1090 MHz 1090 MHz 60<br>Gps ηD<br>19 1030 MHz 50<br>1030 MHz<br>18 40<br>17 30<br>16 20<br>VDD = 52 Vdc, IDQ(A+B) = 100 mA<br>Pulse Width = 128 μsec, Duty Cycle = 10%<br>15 10<br>0 200 400 600 800 1000 1200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br> **Figure 7. Power Gain and Drain Efficiency versus Output Power – 52 V** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 7 ## **1030–1090 MHz REFERENCE CIRCUIT** **==> picture [433 x 130] intentionally omitted <==** **----- Start of picture text -----**<br> peeetsarstfeljsiiitp Zo = 5 Ω<br>Uf| saia Ean reeapeeerecauewereH H LYranewear:ee<br>f = 1090 MHz<br>oa) Fa| sereneet Zload elonsoresEP eeeeeuaueemnecoe) | ee aase cdSS Bera k<br>"iile| Vases A<br>aee f = 1030 MHz ea f = 1030 MHz TESSSOS ROOSS<br>NO<br>o2\ e SU aaa,» Zsource CONS S SIC SS HE<br>NB N RIOT HE<br>a\\\ \ FakWERECer —_ OS SSSES f = 1090 MHz A>SKEET S SISOK LTA TESGates<br>**----- End of picture text -----**<br> **==> picture [305 x 180] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz Ω Ω<br>1030 2.3 – j1.7 0.91 – j0.76<br>1090 2.0 – j1.9 0.88 – j0.47<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 Ω 50 Ω<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 8. Series Equivalent Source and Load Impedance – 1030–1090 MHz** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 8 **1030 MHz NARROWBAND PRODUCTION TEST FIXTURE – 4.0** ″ × **5.0** ″ **(10.2 cm** × **12.7 cm)** **==> picture [365 x 293] intentionally omitted <==** **----- Start of picture text -----**<br> C1 C3 C25 C27<br>AFV10700H<br>B1<br>C5 Rev. 0 C17<br>C7<br>D89532 C12<br>Coax1 R1 L1 Coax3<br>C14*<br>C19*<br>C9 C11 C16 C20*C21*<br>C10 C22*<br>C23*<br>C24*<br>C15*<br>Coax2 R2 L2 Coax4<br>C13<br>C8<br>C6<br>C2 B2 C4 C18<br>C26 C28<br>CUT OUT AREA<br>**----- End of picture text -----**<br> *C14, C15, C19, C20, C21, C22, C23 and C24 are mounted vertically. **Figure 9. AFV10700H Narrowband Test Circuit Component Layout – 1030 MHz** **Table 8. AFV10700H Narrowband Test Circuit Component Designations and Values – 1030 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |B1, B2|Short RF Bead|2743019447|Fair--Rite| |C1, C2|22μF, 35 V Tantalum Capacitor|T491X226K035AT|Kemet| |C3, C4|2.2μF Chip Capacitor|C1825C225J5RAC|Kemet| |C5, C6|0.1μF Chip Capacitor|CDR33BX104AKWS|AVX| |C7, C8, C19, C20, C21, C22, C23, C24|43 pF Chip Capacitor|ATC100B430JT500XT|ATC| |C9, C10|3.3 pF Chip Capacitor|ATC100B3R3CT500XT|ATC| |C11|0.7 pF Chip Capacitor|ATC100B0R7BT500XT|ATC| |C12, C13|36 pF Chip Capacitor|ATC100B360JT500XT|ATC| |C14, C15|5.1 pF Chip Capacitor|ATC100B5R1CT500XT|ATC| |C16|5.6 pF Chip Capacitor|ATC100B5R6CT500XT|ATC| |C17, C18|0.01μF Chip Capacitor|C1825C103K1GACTU|Kemet| |C25, C26, C27, C28|470μF, 63 V Electrolytic Capacitor|MCGPR63V477M13X26--RH|Multicomp| |Coax1, Coax2, Coax3, Coax4|35Ω,Semi Rigid Coax 1.98″Shield Length|HSF--141--35--C|Hongsen Cable| |L1, L2|12 nH Inductor, 3 Turns|GA3094--ALC|Coilcraft| |R1, R2|5.6Ω,1/4 W Chip Resistor|CRCW12065R60FKEA|Vishay| |PCB|Arlon, AD255A, 0.03″,εr= 2.55|D89532|MTL| **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 9 ## **TYPICAL CHARACTERISTICS – 1030 MHz PRODUCTION TEST FIXTURE** **==> picture [245 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 21.0 90<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz<br>20.5 Pulse Width = 128 μsec, Duty Cycle = 10% 80<br>20.0 70<br>19.5 60<br>Gps<br>19.0 50<br>ηD<br>18.5 40<br>18.0 30<br>17.5 20<br>17.0 10<br>50 100 200 300 500 700 1000<br>, POWER GAIN (dB)<br>ps<br>G<br>**----- End of picture text -----**<br> **==> picture [118 x 8] intentionally omitted <==** **----- Start of picture text -----**<br> Pout, OUTPUT POWER (WATTS) PEAK<br>**----- End of picture text -----**<br> **Figure 10. Power Gain and Drain Efficiency versus Output Power** **==> picture [249 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 22<br>VDD = 50 Vdc, f = 1030 MHz<br>Pulse Width = 128 μsec, Duty Cycle = 10%<br>21<br>IDQ(A+B) = 1000 mA<br>20<br>500 mA<br>19<br>100 mA<br>18<br>17<br>50 100 500 1000<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br> DRAIN EFFICIENCY (%) ps<br>D, G<br>η<br>**----- End of picture text -----**<br> **Figure 11. Power Gain versus Output Power and Quiescent Drain Current** **==> picture [488 x 218] intentionally omitted <==** **----- Start of picture text -----**<br> 24 1200<br>IDQ(A+B) = 100 mA, f = 1030 MHz VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz<br>22 Pulse Width = 128 μsec, Duty Cycle = 10% Pulse Width = 128 μsec, Duty Cycle = 10%<br>1000<br>TC = –55 _ C 25 _ C<br>20<br>800 85 _ C<br>18<br>600<br>50 V<br>16<br>45 V 400<br>14<br>40 V<br>12 35 V 200<br>VDD = 30 V<br>10 0<br>50 100 200 500 1000 28 30 32 34 36 38 40 42 44<br>Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK<br>Figure 12. Power Gain versus Output Power f P1dB P3dB<br>and Drain Voltage (MHz) (W) (W)<br>1030 740 883<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) PEAK<br>out<br>P<br>**----- End of picture text -----**<br> **Figure 13. Output Power versus Input Power** **==> picture [252 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 26 80<br>VDD = 50 Vdc, IDQ(A+B) = 100 mA, f = 1030 MHz<br>24 Pulse Width = 128 μsec, Duty Cycle = 10% 70<br>ηD TC = 25 _ C<br>22 60<br>–55 _ C<br>85 _ C<br>20 50<br>18 TC = –55 _ C 40<br>Gps 25 _ C<br>16 30<br>85 _ C<br>14 20<br>12 10<br>0 200 400 600 800 1000 1200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps DRAIN EFFICIENCY (%)<br>G D,<br>η<br>**----- End of picture text -----**<br> **Figure 14. Power Gain and Drain Efficiency versus Output Power** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 10 ## **1030 MHz NARROWBAND PRODUCTION TEST FIXTURE** **==> picture [305 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> f Zsource Zload<br>MHz Ω Ω<br>1030 4.0 – j6.9 3.9 – j1.4<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured<br>from drain to drain, balanced configuration.<br>InputMatching + DeviceUnder -- OutputMatching<br>Network Test Network<br>50 Ω 50 Ω<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br> **Figure 15. Series Equivalent Source and Load Impedance – 1030 MHz** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 11 ## **PACKAGE DIMENSIONS** **==> picture [82 x 56] intentionally omitted <==** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 12 **==> picture [502 x 233] intentionally omitted <==** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 13 **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 14 **==> picture [502 x 232] intentionally omitted <==** **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 15 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Engineering Bulletins** - EB212: Using Data Sheet Impedances for RF LDMOS Devices ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|May 2017|•<br>Initial release of data sheet| **AFV10700H AFV10700HS** RF Device Data NXP Semiconductors 16 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V. **AFV10700H AFV10700HS** RF Device DataDocument Number: AFV10700H NXP SemiconductorsRev. 0, 05/2017 17
Updated at February 9, 2023
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
About Novapart
Novapart is a B2B electronic component broker specialising in stock shortages and cost reduction. We source hard-to-find parts and identify compliant alternatives across a catalogue of 410,000+ components from 500+ manufacturers.
Learn more →Stock Shortage Specialist
When a component is unavailable, discontinued or has an unacceptable lead time, we tap into our network of vetted European and Asian distributors to source what you need — without compromising on quality or traceability.
Request a quote →Compliant Alternatives
We identify pin-to-pin, electrically equivalent substitutes that meet the same certifications (RoHS, AEC-Q100, REACH) as your original specification — validated against datasheets, not just part numbers. Often at a lower cost.
BOM Analysis service →