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AFT31150NR5
RF FET Transistor, LDMOS, 65 VDC, 741 W, 2.7 GHz, 3.1 GHz, OM-780
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:65VDC; Continuous Drain Current Id:-; Power Dissipation Pd:741W; Operating Frequency Min:2.7GHz; Operating Frequency Max:3.1GHz; RF Transistor Case:OM-780;
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 741W
- Transistor Mounting: Flange
- Transistor Case Style: OM-780
- Operating Frequency Max: 3.1GHz
- Operating Frequency Min: 2.7GHz
- Drain Source Voltage Vds: 65VDC
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 5 |
| Price | 245.49 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data
Document Number: AFT31150N
Rev. 0, 05/2017
## **AFT31150N** oo
## **RF Power LDMOS Transistor**
## N--Channel Enhancement--Mode Lateral MOSFET
This RF power transistor is designed for applications operating at frequencies between 2700 and 3100 MHz. This device is suitable for use in pulse applications.
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Typical Performance: In 2700–3100 MHz reference circuit, VDD = 32 Vdc 2700–3100 MHz, 150 W PEAK, 32 V<br>AIRFAST RF POWER LDMOS<br>Frequency Pout Gps η D IRL TRANSISTOR<br>(MHz) Signal Type (W) (dB) (%) (dB)<br>2700–3100 [(1)] Pulse (300 μsec, 150 Peak 17.2 49.0 –6<br>15% Duty Cycle)<br>a L_<br>Load Mismatch/Ruggedness<br>Frequency Pin Test<br>(MHz) Signal Type VSWR (W) Voltage Result<br>3100 [(2)] Pulse (300 μsec, 10:1 6.8 Peak 32 No Device<br>15% Duty Cycle) at all Phase (3 dB Degradation OM--780--2L<br>Angles Overdrive) PLASTIC<br>EEE<br>1. The values shown are the center band performance numbers across the indicated<br>frequency range.<br>**----- End of picture text -----**<br>
2. Measured in 3100 MHz narrowband production test fixture.
## **Features**
- Characterized with series equivalent large--signal impedance parameters
- Internally matched for ease of use
- Qualified up to a maximum of 32 VDD operation
- Integrated ESD protection
- Greater negative gate--source voltage range for improved Class C operation
- Recommended driver: AFIC31025N (25 W)
- Included in NXP product longevity program with assured supply for a minimum of 15 years after launch
## **Typical Applications**
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Gate 2 1 Drain<br>(Top View)<br>**----- End of picture text -----**<br>
Note: Exposed backside of the package is the source terminal for the transistor.
**Figure 1. Pin Connections**
- Commercial S--Band radar systems
- Maritime radar
- Weather radar
**AFT31150N**
© 2017 NXP B.V.
RF Device Data NXP Semiconductors
1
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**||**Symbol**|**Value**||**Unit**|
|Drain--Source Voltage||VDSS|–0.5, +65||Vdc|
|Gate--Source Voltage||VGS|–6.0, +10||Vdc|
|Operating Voltage||VDD|32, +0||Vdc|
|Storage Temperature Range||Tstg|–65 to +150||°C|
|Case Operating Temperature Range||TC|–40 to +150||°C|
|Operating Junction Temperature Range **(1,2)**||TJ|–40 to +225||°C|
|Total Device Dissipation @ TC= 25°C<br>Derate above 25°C||PD|741<br>3.7||W<br>W/°C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**||**Symbol**|**Value (2,3)**||**Unit**|
|Thermal Impedance, Junction to Case<br>Pulse: Case Temperature 76°C, 160 W Peak, 300μsec Pulse Width,<br>15% Duty Cycle, 32 Vdc, IDQ= 100 mA, 3100 MHz||ZθJC|0.042||°C/W|
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**|||**Class**|||
|Human Body Model (per JESD22--A114)|||2, passes 2500 V|||
|Charge Device Model (per JESD22--C101)|||C3, passes 2000 V|||
|**Table 4. Moisture Sensitivity Level**||||||
|**Test Methodology**|**Rating**|**Package Peak Temperature**|||**Unit**|
|Per JESD22--A113, IPC/JEDEC J--STD--020|3||260||°C|
|**Table 5. Electrical Characteristics** (TA= 25°C unless otherwise noted)||||||
|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**Off Characteristics**||||||
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|1|μAdc|
|Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 10μAdc)|V(BR)DSS|65|—|—|Vdc|
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 32 Vdc, VGS= 0 Vdc)|IDSS|—|—|1|μAdc|
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|μAdc|
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 180μAdc)|VGS(th)|0.8|1.2|1.6|Vdc|
|Gate Quiescent Voltage<br>(VDD= 32 Vdc, ID= 100 mAdc, Measured in Functional Test)|VGS(Q)|1.1|1.6|2.1|Vdc|
|Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1.8 Adc)|VDS(on)|0.1|0.15|0.3|Vdc|
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.nxp.com/RF/calculators.
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955.
(continued)
**AFT31150N**
RF Device Data NXP Semiconductors
2
**Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)**
|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**Functional Tests (1)** (In NXP Production Test Fixture, 50 ohm system) VDD= 32 Vdc, IDQ= 100 mA,<br>f = 3100 MHz, 300μsec Pulse Width, 15% Duty Cycle||||||||Pout= 160 W||Peak (24 W Avg.),||
|Power Gain|||||Gps|15.0||17.0||19.0|dB|
|Drain Efficiency|||||ηD|46.5||50.0||—|%|
|Input Return Loss|||||IRL|_—_||–19||–9|dB|
|**Table 6. Load**|**Mismatch/Ruggedness** (In NXP Production Test Fixture, 50 ohm system) IDQ=|||||||100 mA||||
|**Frequency**<br>**(MHz)**|**Signal Type**||**VSWR**|**Pin**<br>**(W)**|||**Test Voltage, VDD**|||**Result**||
|3100|Pulse<br>(300μsec, 15% Duty Cycle)||10:1 at all<br>Phase Angles|6.8 Peak<br>(3 dB Overdrive)|||32|||No Device Degradation||
|**Table 7. Ordering Information**||||||||||||
|**Device**|||**Tape and Reel Information**|||||||**Package**||
|AFT31150NR5||R5 Suffix =|50 Units, 32 mm Tape Width, 13--inch Reel|||||OM--780--2L||||
1. Part internally matched both on input and output.
**AFT31150N**
RF Device Data NXP Semiconductors
3
## **TYPICAL CHARACTERISTICS**
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10 [9]<br>VDD = 32 Vdc<br>10 [8]<br>7.83 Amps<br>10 [7]<br>11.24 Amps<br>10 [6]<br>9.93 Amps<br>10 [5]<br>10 [4]<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Note:** MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.nxp.com/RF/calculators.
**Figure 2. MTTF versus Junction Temperature – Pulse**
**AFT31150N**
RF Device Data NXP Semiconductors
4
## **2700–3100 MHz REFERENCE CIRCUIT – 2.0** ″ × **3.0** ″ **(5.1 cm** × **7.6 cm)**
**Table 8. 2700–3100 MHz Performance** (In NXP Reference Circuit, 50 ohm system) Pout = 150 W, VDD = 32 Vdc, IDQ = 100 mA
|**Frequency**<br>**(MHz)**|**Signal Type**|**Pin**<br>**(W)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**IRL**<br>**(dB)**|
|---|---|---|---|---|---|
|2700|Pulse<br>(300μsec, 15% Duty Cycle)|3.1|16.9|53.0|–6|
|2900||2.9|17.2|49.0|–6|
|3100||3.0|17.0|47.0|–9|
**AFT31150N**
RF Device Data NXP Semiconductors
5
## **2700–3100 MHz REFERENCE CIRCUIT — 2.0** ″ × **3.0** ″ **(5.1 cm** × **7.6 cm)**
|C7<br>Q1<br>C6<br>C8<br>C9<br>C11<br>C12<br>C1<br>C4<br>C2<br>C3<br>C5<br>C10<br>R1<br>**Figure 3. AFT31150N Reference Circuit Component Layout – 2700–3100 MHz**<br>AFT31150N<br>Rev. 0<br>D94275<br>+<br>**Table 9. AFT31150N Reference Circuit Component Designations and Values – 2700–3100 MHz**|C7<br>Q1<br>C6<br>C8<br>C9<br>C11<br>C12<br>C1<br>C4<br>C2<br>C3<br>C5<br>C10<br>R1<br>**Figure 3. AFT31150N Reference Circuit Component Layout – 2700–3100 MHz**<br>AFT31150N<br>Rev. 0<br>D94275<br>+<br>**Table 9. AFT31150N Reference Circuit Component Designations and Values – 2700–3100 MHz**|C7<br>Q1<br>C6<br>C8<br>C9<br>C11<br>C12<br>C1<br>C4<br>C2<br>C3<br>C5<br>C10<br>R1<br>**Figure 3. AFT31150N Reference Circuit Component Layout – 2700–3100 MHz**<br>AFT31150N<br>Rev. 0<br>D94275<br>+<br>**Table 9. AFT31150N Reference Circuit Component Designations and Values – 2700–3100 MHz**|C7<br>Q1<br>C6<br>C8<br>C9<br>C11<br>C12<br>C1<br>C4<br>C2<br>C3<br>C5<br>C10<br>R1<br>**Figure 3. AFT31150N Reference Circuit Component Layout – 2700–3100 MHz**<br>AFT31150N<br>Rev. 0<br>D94275<br>+<br>**Table 9. AFT31150N Reference Circuit Component Designations and Values – 2700–3100 MHz**|
|---|---|---|---|
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|C1|3.6 pF Chip Capacitor|ATC800B3R6CT500XT|ATC|
|C2|0.8 pF Chip Capacitor|ATC800B0R8BT500XT|ATC|
|C3, C7|2.2μF Chip Capacitor|C3225X7R2A225K230AB|TDK|
|C4|0.6 pF Chip Capacitor|ATC800B0R6BT500XT|ATC|
|C5, C6|3.3 pF Chip Capacitor|ATC800B3R3CT500XT|ATC|
|C8|0.7 pF Chip Capacitor|ATC800B0R7BT500XT|ATC|
|C9|0.4 pF Chip Capacitor|ATC800B0R4BT500XT|ATC|
|C10|220μF, 50 V Electrolytic Capacitor|MVY50V221MJ10TP|United Chem|
|C11|4.3 pF Chip Capacitor|ATC800B4R3CT500XT|ATC|
|C12|0.1 pF Chip Capacitor|ATC800B0R1BT500XT|ATC|
|Q1|RF High Power LDMOS Transistor|AFT31150N|NXP|
|R1|10Ω, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay|
|PCB|Rogers RT6035HTC, 0.030″,εr= 3.5|D94275|MTL|
**AFT31150N**
RF Device Data NXP Semiconductors
6
## **TYPICAL CHARACTERISTICS – 2700–3100 MHz REFERENCE CIRCUIT**
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19 58<br>18 G ps 56<br>17 54<br>16 52<br>15 50<br>ηD<br>14 48<br>13 V DD = 32 Vdc, P in = 150 W, I DQ = 100 mA 46<br>12 Pulse Width = 300 μsec, Duty Cycle = 15% 0<br>11 –5<br>IRL<br>10 –10<br>9 –15<br>2600 2650 2700 2750 2800 2850 2900 2950 3000 3050 3100 3150 3200<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>LOSS (dB)<br>IRL, INPUT RETURN<br>**----- End of picture text -----**<br>
**Figure 4. Power Gain, Drain Efficiency and IRL versus Frequency at a Constant Output Power**
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20 60<br>2700 MHz<br>19 3100 MHz 2900 MHz 55<br>2900 MHz Gps<br>18 50<br>3100 MHz<br>17 45<br>ηD<br>16 2700 MHz 40<br>15 35<br>VDD = 32 Vdc, IDQ = 100 mA<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>14 30<br>40 60 80 100 120 140 160 180 200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br>
**Figure 5. Power Gain and Drain Efficiency versus Output Power**
**AFT31150N**
RF Device Data NXP Semiconductors
7
## **TYPICAL CHARACTERISTICS – 2700–3100 MHz REFERENCE CIRCUIT**
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200<br>TC = 25 _ C<br>–40 _ C<br>150<br>85 _ C<br>100<br>50<br>VDD = 50 Vdc, IDQ = 100 mA, f = 2700 MHz<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>Pin, INPUT POWER (WATTS) PEAK<br>Figure 6. Output Power versus Input Power<br>versus Temperature – 2700 MHz<br>225<br>TC = –40 _ C<br>200<br>175 25 _ C<br>150<br>85 _ C<br>125<br>100<br>75<br>50<br>VDD = 50 Vdc, IDQ = 100 mA, f = 2900 MHz<br>25<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>Pin, INPUT POWER (WATTS) PEAK<br>Figure 8. Output Power versus Input Power<br>versus Temperature – 2900 MHz<br>200<br>TC = –40 _ C<br>25 _ C<br>150 _<br>85 C<br>100<br>50<br>VDD = 50 Vdc, IDQ = 100 mA, f = 3100 MHz<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>0<br>0 1 2 3 4 5 6 7 8 9 10 11<br>Pin, INPUT POWER (WATTS) PEAK<br>, OUTPUT POWER (WATTS) PULSED<br>out<br>P<br>, OUTPUT POWER (WATTS) PULSED<br>out<br>P<br>, OUTPUT POWER (WATTS) PULSED<br>out<br>P<br>**----- End of picture text -----**<br>
**Figure 10. Output Power versus Input Power versus Temperature – 3100 MHz**
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**----- Start of picture text -----**<br>
19 55<br>TC = –40 _ C<br>18 50<br>85 _ C 25 _ C<br>17 45<br>ηD<br>16 Gps 40<br>15 –40 _ C 35<br>14 25 _ C 30<br>13 85 _ C 25<br>12 VDD = 50 Vdc, IDQ = 100 mA, f = 2700 MHz 20<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>11 15<br>10 100 200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 7. Power Gain and Drain Efficiency versus<br>Output Power – 2700 MHz<br>17 50<br>TC = –40 _ C<br>16 45<br>Gps 25 _ C<br>15 40<br>–40 _ C<br>14 35<br>25 _ C ηD<br>13 30<br>85 _ C<br>12 85 _ C 25<br>11 20<br>10 VDD = 50 Vdc, IDQ = 100 mA, f = 2900 MHz 15<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>9 10<br>10 100 200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>Figure 9. Power Gain and Drain Efficiency versus<br>Output Power – 2900 MHz<br>19 55<br>18 TC = –40 _ C 50<br>17 25 _ C 45<br>16 40<br>Gps<br>15 85 _ C –40 _ C 35<br>14 30<br>25 _ C ηD<br>13 25<br>12 VDD = 50 Vdc, IDQ = 100 mA, f = 3100 MHz 20<br>85 _ C Pulse Width = 300 μsec, Duty Cycle = 15%<br>11 15<br>10 100 200<br>Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>, POWER GAIN (dB)<br>ps<br>G DRAIN EFFICIENCY (%)D,<br>η<br>**----- End of picture text -----**<br>
**Figure 11. Power Gain and Drain Efficiency versus Output Power – 3100 MHz**
**AFT31150N**
RF Device Data NXP Semiconductors
8
**==> picture [431 x 611] intentionally omitted <==**
**----- Start of picture text -----**<br>
2700–3100 MHz REFERENCE CIRCUIT<br>uy { SR IDLERS<br>Zo = 5 Ω<br>:{ guseersieeeEpteace aes Pars ee,memaancaCAA KLEEosSS \ ™<br>He REiileeeeeer<br>spessstesreetengs BH tal f = 3100 MHz aan PPwee Meeehe<br>2 speereqriviierisrisip Batinon HEE HET stb CoH PERE RS<br>Zload<br>ole ie ete f = 3100 MHz ia perericmeers?cara mea<br>A eelcienic ene seenesctstsm (#) CER Or ashe oS<br>f = 2700 MHz<br>Zsource<br>\ ees semaeet O eee ,<br>\ a RSEAY Ksaneeues SS . Ss AS f = 2700 MHz e SS,SESSSSSRS SS S ed<br>AN<br>SAIS SSS onan SES CxSRRRsist<br>A OSSS S SOSKSA SOR LEP be<br>ak tesrereonsreeennn SeetetetsSR OO tewannstatss<br>h Sane GenesSRKRH PEE es<br>ROI So5e5SSSR X KONXRROOLAH ESS<br>RNSSSeS 0 COSYPRET LOA POSS<br>\ ee s<br>ee ae se<br>SOT PER SSSo's<br>SOT aan, HHS Y<br>a <<br>= ol”‘ xe ee<br>SQOsC) ro~~ = = > Se<br>f Zsource Zload<br>MHz Ω Ω<br>2700 1.9 – j1.8 3.7 – j1.5<br>2900 1.7 – j1.4 3.2 – j0.9<br>3100 1.7 – j1.0 3.6 – j0.7<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 Ω 50 Ω<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 12. Series Equivalent Source and Load Impedance – 2700–3100 MHz**
**AFT31150N**
RF Device Data NXP Semiconductors
9
**3100 MHz NARROWBAND PRODUCTION TEST FIXTURE – 3.0** ″ × **5.0** ″ **(7.6 cm** × **12.7 cm)**
|**Figure 13. AFT31150N Narrowband Test Circuit Component Layout – 3100 MHz**<br>C1<br>R1<br>C3<br>C2<br>C12<br>C4<br>C20<br>C5<br>C9<br>C10<br>C11<br>C1<br>C16<br>C22<br>C23<br>C15<br>C14<br>C6<br>C7<br>C8<br>C17 C18<br>C21<br>C19<br>AFT31150N<br>Rev. 2<br>D89805<br>CUT OUT AREA<br>**Table 10. AFT31150N Narrowband Test Circuit Component Designations and Values – 3100 MHz**|C5|C5||||C3|C3|C3|C3|C3|C4|C4|C4|C4|||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||||C1<br><br>C2|||||||||||||||
||||||||||R1<br>C9||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||
||||||||||||||||||||||
|||C6||C7|C8||||C10<br>D89805|||CUT OUT AREA||||C12<br>C20<br>C11<br>C1<br>C23<br>C15<br>C21<br>C19||||3|
||||||||||||||||||||||
||||||||||||||||||||||
|||AFT31150N<br>Rev. 2|||||||||||||||||||
||||||||||||||||||||||
|||**Figure 13. AFT31150N Narrowband Test Circuit Component Layout – 3100 MHz**<br>**10. AFT31150N Narrowband Test Circuit Component Designations and Values – 3100 MHz**|||||||||||||||||||
|||**Part**|||||**Description**|||||||**Part Number**|||||**Manufacturer**||
|C1, C18, C21|||||||10μF Chip Capacitor|||||||C5750X7S2A106M|||||TDK||
|C2, C17, C20|||||||1μF Chip Capacitor|||||||C3225JB2A105K200AA|||||TDK||
|C3, C16, C19|||||||0.1μF Chip Capacitor|||||||C1206C104K1RACTU|||||Kemet||
|C4|||||||3.3 pF Chip Capacitor|||||||ATC100B3R3CT500XT|||||ATC||
|C5, C8, C9, C10|||||||0.2 pF Chip Capacitor|||||||ATC100B0R2BT500XT|||||ATC||
|C6, C13|||||||4.3 pF Chip Capacitor|||||||ATC100B4R3CT500XT|||||ATC||
|C7|||||||1.0 pF Chip Capacitor|||||||ATC100B1R0BT500XT|||||ATC||
|C11|||||||0.3 pF Chip Capacitor|||||||ATC100B0R3BT500XT|||||ATC||
|C12|||||||0.8 pF Chip Capacitor|||||||ATC100B0R8BT500XT|||||ATC||
|C14, C15|||||||2.2 pF Chip Capacitor|||||||ATC100B2R2BT500XT|||||ATC||
|C22, C23|||||||220μF, 100 V Electrolytic Capacitor|||||||MCGPR100V227M16X26-RH|||||Multicomp||
|R1|||||||20Ω,1/4 W Chip Resistor|||||||CRCW120620R0FKEA|||||Vishay||
|PCB|||||||Taconic RF35, 0.030″,εr= 3.5|||||||D89805|||||MTL||
**AFT31150N**
RF Device Data NXP Semiconductors
10
## **TYPICAL CHARACTERISTICS**
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20 64 62<br>VDD = 32 Vdc, IDQ(A+B) = 100 mA, f = 3100 MHz P3dB = 52.47 dBm (177 W) Ideal<br>19 Pulse Width = 300 μsec, Duty Cycle = 15% 56 58<br>P1dB = 51.87 dBm (154 W)<br>18 48 54<br>Actual<br>17 40 50<br>Gps<br>16 32 46<br>15 24 42<br>ηD<br>14 16 38 VDD = 32 Vdc, IDQ(A+B) = 100 mA, f = 3100 MHz<br>Pulse Width = 300 μsec, Duty Cycle = 15%<br>13 8 34<br>3 10 20 30 50 100 200 300 22 24 26 28 30 32 34 36 38 40<br>Pout, OUTPUT POWER (WATTS) PEAK Pin, INPUT POWER (dBm) PEAK<br>Figure 14. Power Gain and Drain Efficiency Figure 15. Output Power versus Input Power<br>versus Output Power<br>21 20<br>VDD = 32 Vdc, f = 3100 MHz IDQ(A+B) = 100 mA, f = 3100 MHz<br>20 Pulse Width = 300 μsec, Duty Cycle = 15% 19 Pulse Width = 300 μsec, Duty Cycle = 15%<br>19 18<br>IDQ = 900 mA<br>18 17<br>600 mA<br>17 16<br>300 mA<br>16 15<br>32 V<br>15 14 30 V<br>100 mA 28 V<br>14 13 26 V<br>VDD = 24 V<br>13 12<br>3 10 20 30 50 100 200 300 30 40 50 60 70 80 90 100 200<br>Pout, OUTPUT POWER (WATTS) PEAK Pout, OUTPUT POWER (WATTS) PEAK<br>, POWER GAIN (dB)<br>Gps DRAIN EFFICIENCY (%)D, , OUTPUT POWER (dBm)out<br>η P<br>, POWER GAIN (dB) , POWER GAIN (dB)<br>ps ps<br>G G<br>**----- End of picture text -----**<br>
**Figure 16. Power Gain versus Output Power**
**Figure 17. Power Gain versus Output Power and Drain Voltage**
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## **3100 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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f Zsource Zload<br>MHz Ω Ω<br>3100 9.5 – j5.3 5.5 + j1.2<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured<br>from drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 Ω 50 Ω<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 18. Series Equivalent Source and Load Impedance – 3100 MHz**
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## **PACKAGE DIMENSIONS**
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## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following resources to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
## **To Download Resources Specific to a Given Part Number:**
1. Go to http://www.nxp.com/RF
2. Search by part number
3. Click part number link
4. Choose the desired resource from the drop down menu
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|May 2017|•<br>Initial release of data sheet|
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## _**How to Reach Us:**_
**Home Page:** nxp.com
**Web Support:** nxp.com/support
Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein.
NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions.
NXP, the NXP logo, and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2017 NXP B.V.
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Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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