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AFT27S010NT1
RF FET Transistor, 65 V, 728 MHz, 3600 MHz, PLD-1.5W
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728MHz; Operating Frequency Max:3600MHz; RF Transistor Case:PLD-1.5W; No
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: AFT27S010N
- Power Dissipation: -
- Transistor Mounting: Surface Mount
- Transistor Case Style: PLD-1.5W
- Operating Frequency Max: 3600MHz
- Operating Frequency Min: 728MHz
- Drain Source Voltage Vds: 65V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 7.13 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: AFT27S010N Rev. 3, 12/2015
## **RF Power LDMOS Transistor**
## N--Channel Enhancement--Mode Lateral MOSFET
This 1.26 W RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3600 MHz.
## **AFT27S010NT1**
- Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 90 mA, Pout = 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. **[(1)]**
## **2100 MHz**
||**2100 MHz**|||
|---|---|---|---|
||**Gps**<br>**D**<br>**Output PAR**<br>**ACPR**||**IRL**|
||**Frequency**<br>**(dB)**<br>**(%)**<br>**(dB)**<br>**(dBc)**||**(dB)**|
||2110 MHz<br>21.6<br>23.2<br>9.1<br>--42.0||--11|
||2140 MHz<br>21.8<br>23.0<br>9.0<br>--41.5||--15|
||2170 MHz<br>21.7<br>22.6<br>8.7<br>--41.7||--15|
||**2300 MHz**|||
||**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>**IRL**<br>**(dB)**<br>2300 MHz<br>21.2<br>23.6<br>9.0<br>--40.9<br>--10<br>2350 MHz<br>21.6<br>22.6<br>8.6<br>--40.0<br>--22<br>2400 MHz<br>20.7<br>21.0<br>8.3<br>--40.1<br>--9<br>**2600 MHz**<br>**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>**IRL**<br>**(dB)**<br>2500 MHz<br>19.6<br>22.0<br>9.8<br>--44.8<br>--7<br>2600 MHz<br>21.0<br>22.7<br>9.4<br>--41.4<br>--15<br>2700 MHz<br>19.6<br>21.2<br>8.9<br>--39.7<br>--5<br>Typical Single--Carrier W--CDMA Performance: VDD= 28 Vdc,<br>IDQ= 80 mA, Pout= 1.26 W Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**(1)**<br>~~=e~~<br>~~=—EEES|~~|||
||**700 MHz**|||
**728–3600 MHz, 1.26 W AVG., 28 V AIRFAST RF POWER LDMOS TRANSISTOR**
**==> picture [40 x 17] intentionally omitted <==**
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PLD--1.5W<br>PLASTIC<br>**----- End of picture text -----**<br>
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**----- Start of picture text -----**<br>
RFin/VGS RFout/VDS<br>(Top View)<br>**----- End of picture text -----**<br>
Note: The center pad on the backside of the package is the source terminal for the transistor.
**Figure 1. Pin Connections**
|**700 MHz**||||||
|---|---|---|---|---|---|
|**Frequency**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Output PAR**<br>**(dB)**|**ACPR**<br>**(dBc)**|**IRL**<br>**(dB)**|
|728 MHz|24.3|25.5|9.3|--44.0|--12|
|748 MHz|24.3|24.7|9.4|--43.9|--12|
|768 MHz|24.3|23.8|9.5|--43.6|--12|
## **3500 MHz**
|**3500 MHz**||||||
|---|---|---|---|---|---|
|**Frequency**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Output PAR**<br>**(dB)**|**ACPR**<br>**(dBc)**|**IRL**<br>**(dB)**|
|3400 MHz|14.7|15.8|9.0|--44.9|--7|
|3500 MHz|16.0|16.8|9.0|--44.9|--8|
|3600 MHz|15.0|17.4|8.6|--44.2|--4|
1. All data measured in fixture with device soldered to heatsink.
## **Features**
- Greater Negative Gate--Source Voltage Range for Improved Class C Operation
- Designed for Digital Predistortion Error Correction Systems
- Universal Broadband Driven Device with Internal RF Feedback
> Freescale Semiconductor, Inc., 2013–2015. All rights reserved.
**AFT27S010NT1** ~~> treescale~~
**AFT27S010NT1** 1
RF Device Data Freescale Semiconductor, Inc.
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**|||||
|---|---|---|---|---|
|**Rating**||**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage||VDSS|--0.5, +65|Vdc|
|Gate--Source Voltage||VGS|--6.0, +10|Vdc|
|Operating Voltage||VDD|32, +0|Vdc|
|Storage Temperature Range||Tstg|--65 to +150|C|
|Case Operating Temperature Range||TC|--40 to +150|C|
|Operating Junction Temperature Range **(1,2)**||TJ|--40 to +150|C|
|**Table 2. Thermal Characteristics**|||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 77C, 1.3 W CW, 28 Vdc, IDQ= 90 mA, 2140 MHz<br>RJC<br>3.5<br>C/W<br>~~ee~~|||||
|**Table 3. ESD Protection Characteristics**|||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>1B<br>Machine Model (per EIA/JESD22--A115)<br>A<br>Charge Device Model (per JESD22--C101)<br>III<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~a~~|||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||
|**Characteristic**|**Symbol**|**Min**|**Typ**<br>**Max**|**Unit**|
|**Off Characteristics**|||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>Adc<br>~~See~~|||||
|**On Characteristics**|||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 12.1Adc)<br>VGS(th)<br>0.8<br>1.2<br>1.6<br>Vdc<br>Gate Quiescent Voltage<br>(VDD= 28 Vdc, ID= 90 mAdc, Measured in Functional Test)<br>VGS(Q)<br>1.5<br>1.8<br>2.3<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 6 Vdc, ID= 121 mAdc)<br>VDS(on)<br>0.1<br>0.2<br>0.3<br>Vdc<br>~~aan~~|||||
|1. Continuous use at maximum temperature will affect MTTF.|||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF|||Select Software & Tools/Development Tools/Calculators to access MTTF||
|calculators by product.|||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
|**Characteristic**|**Symbol**||**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 90 mA, P|||= 90 mA, Pout= 1.26 W Avg., f = 2170 MHz, Single--Carrier||||
|W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel|||||||
|Bandwidth @5 MHz Offset.|||||||
|Power Gain|Gps||20.0|21.7|—|dB|
|Drain Efficiency|D||18.5|21.5|—|%|
|Adjacent Channel Power Ratio|ACPR||—|--40.6|--37.9|dBc|
|Input Return Loss|IRL||—|--14|--9|dB|
|**Load Mismatch**(In Freescale Test Fixture, 50 ohm system) IDQ= 90 mA, f = 2140 MHz|||||||
|VSWR 5:1 at 32 Vdc, 13.9 W CW Output Power|||No Device Degradation||||
|(3 dB Input Overdrive from 10 W CW Rated Power)|||||||
|**Typical Performance**(In Freescale Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 90 mA, 2110--2170 MHz Bandwidth|||= 90 mA, 2110--2170 MHz Bandwidth||||
|Pout@ 1 dB Compression Point, CW|P1dB||—|10|—|W|
|AM/PM|||—|--12.6|—||
|(Maximum value measured at the P3dB compression point across|||||||
|the 2110--2170 MHz frequency range.)|||||||
|VBW Resonance Point|VBWres||—|120|—|MHz|
|(IMD Seventh Order Intermodulation Inflection Point)|||||||
|Gain Flatness in 60 MHz Bandwidth @ Pout= 1.26 W Avg.|GF||—|0.20|—|dB|
|Gain Variation over Temperature|G||—|0.011|—|dB/C|
|(--30C to +85C)|||||||
|Output Power Variation over Temperature|P1dB||—|0.004|—|dB/C|
|(--30C to +85C)|||||||
**Table 6. Ordering Information**
**Device Tape and Reel Information Package** AFT27S010NT1 T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel PLD--1.5W ~~es~~
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
3
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|---|---|---|
||C7<br>C6<br>R1<br>C2<br>C1*<br>C13<br>C12<br>C4<br>C5*<br>C3<br>C8<br>C9<br>Q1<br>VDD<br>VGG<br>fo)<br>°<br>°<br>°<br>°<br>°<br>°<br>°<br>°<br>°<br>oO<br>°<br>°<br>°<br>°<br>°<br>**°**<br>**°**<br>**°**<br>°<br>**°**<br>~~$~~<br>~~°~~<br>~~°~~<br>°<br>fo}<br>°<br>°<br>**°**<br>ceecccccccccoooa|| |<br>**8**<br>**°**<br>000000000<br>}<br>~~8~~<br>~~°~~<br>°<br>~~°~~<br>8<br>$ **°**<br>**°**<br>}<br>~~°~~<br>~~$~~<br>3<br>°<br>~~°~~<br>8<br>8<br>**°**<br>**°**<br>°<br>~~°~~<br>~~8~~<br>~~$~~<br>}<br>~~°~~<br>°<br>°<br>oT<br>°<br>°<br>2<br>s(FI<br>{2<br>é<br>é<br>2<br>°<br>°<br>°<br>}<br>°<br>~~°~~<br>~~°~~<br>°<br>°<br>~~;~~<br>~~&~~<br>@~~)~~<br>°<br>°<br>°<br>2~~)~~<br>~~@~~<br>°<br>°<br>°<br>°<br>°<br>°<br>°<br>ooo<br>|<br>000000009000<br>~~[|~~<br>°<br>°<br>°<br>°<br>~~[|~~<br>0000<br>~~|_|~~<br>°<br>°<br>°<br>°<br>~~—~~<br>e000<br>e0200000000000000<br>°<br>°<br>0°,<br>—<br>°<br>20000000 gggg0000000000000 0000000<br>~~see~~<br>~~[_|~~<br>0 000000000000000000000000<br>—<br>=~~n~~<br>~~|~~<br>~~[~~9 ~~|~~<br>~~— |~~<br>~~|_|~~<br>_<br>~~f~~T<br>00000000 29999000090000000 0000 000<br>we<br>0 000000000000000000000000<br>co<br>ogqgoaaqo<br>°<br>°<br>°<br>Soo<br>000000<br>00000<br>°<br>°<br>0000<br>~~|~~<br>°<br>°<br>000000000000000 oooe<br>~~|__|~~<br>°||
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||C11<br>Rev. 2<br>2100MHz<br>D53402<br>2,<br>or<br>Se<br>cin<br>oe<br>8<br>°° ~~freescale”~~<br>2<br>o<br>°||
||:<br>~~semiconductor~~<br>°<br>°<br>8<br>0000000000<br>°<br>°<br>°<br>°|°<br>°|
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||VDD<br>~~°~~<br>**°**<br>**°**<br>°<br>~~°~~°<br>~~°~~<br>°<br>°<br>°<br>°<br>°<br>°<br>6000000000000000000000000000000000<br>0000000000000<br>5|°|
||*C1 and C5 are mounted vertically.||
||NOTE: All data measured in fixture with device soldered to heatsink.||
||**Figure 2. AFT27S010NT1 Test Circuit Component Layout — 2110--2170 MHz**||
|**Table 7. AFT27S010NT1 Test Circuit Com**|**Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**||
||**Part**<br>**Description**<br>**Part Number**<br>**Manufacturer**||
|C1, C5, C6, C8, C9|C1, C5, C6, C8, C9<br>9.1 pF Chip Capacitors<br>ATC100B9R1JT500XT<br>ATC||
|C2|1.1 pF Chip Capacitor<br>ATC100B1R1JT500XT<br>ATC||
|C3|2.0 pF Chip Capacitor<br>ATC100B2R0JT500XT<br>ATC||
|C4|1.0 pF Chip Capacitor<br>ATC100B1R0JT500XT<br>ATC||
|C7, C10, C11, C12, C13|C7, C10, C11, C12, C13<br>10F Chip Capacitors<br>GRM32ER61H106KA12L<br>Murata||
|Q1|RF Power LDMOS Transistor<br>AFT27S010NT1<br>Freescale||
|R1|2.37Chip Resistor<br>CRCW12062R37FKEA<br>Vishay||
|PCB<br>Rogers RO4350B, 0.020,r= 3.66<br>D53402<br>MTL|||
**Table 7. AFT27S010NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
4
## **TYPICAL CHARACTERISTICS — 2110--2170 MHz**
**==> picture [399 x 618] intentionally omitted <==**
**----- Start of picture text -----**<br>
25 24<br>D<br>24 23<br>23 VDD = 28 Vdc, Pout = 1.26 W (Avg.) 22<br>IDQ = 90 mA, Single--Carrier W--CDMA<br>22 21<br>Gps<br>21 _a eeeo 3.84 MHz Channel Bandwidth o 20<br>Input Signal PAR = 9.9 dB @ 0.01%<br>20 IRL Probability on CCDF --40 --6 --0.4<br>19 === --41 --10 --0.6<br>18 | Pe --42 --14 --0.8<br>17 ACPR --43 --18 --1<br>16 PARC --44 --22 --1.2<br>15 pSa --45 --26 --1.4<br>2060 2080 2100 2120 2140 2160 2180 2200 2220<br>f, FREQUENCY (MHz)<br>Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression<br>(PARC) Broadband Performance @ Pout = 1.26 W Avg.<br>--20<br>IM3--U<br>--30<br>COM ra IM3--L<br>--40 IM5--U<br>CIE I s<br>IM5--L<br>--50 IM7--U<br>S enn en<br>--60 S VDD = 28 Vdc, Pout = 7.6 W (PEP), I a DQ = 90 mA<br>Two--Tone Measurements, (f1 + f2)/2 = Center IM7--L<br>--70 Frequency of 2140 MHz lt<br>1 10 100 200<br>TWO--TONE SPACING (MHz)<br>Figure 4. Intermodulation Distortion Products<br>versus Two--Tone Spacing<br>23 1 35 --20<br>D<br>PARC<br>22.5 0 30 --25<br>| --1 dB = 1.4 W | pyt™~<br>22 --1 25 --30<br>wea<br>Gps<br>21.5 --2 20 --35<br>--3 dB = 2.55 W<br>ACPR --2 dB = 1.9 W<br>21 --3 PAZ, PE 15 --40<br>VDD = 28 Vdc, IDQ = 90 mA, f = 2140 MHz<br>20.5 --4 7 Single--Carrier W--CDMA, 3.84 MHz Channel ~ 10 --45<br>Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%<br>20 --5 oA Probability on CCDF 5 --50<br>0.5 1 1.5 2 2.5 3<br>Pout, OUTPUT POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>ACPR (dBc)<br>, POWER GAIN (dB) DRAIN EFFICIENCY (%)<br>Gps D<br><br>PROBABILITY ON CCDF (dB)<br>OUTPUT COMPRESSION AT 0.01%<br>**----- End of picture text -----**<br>
**Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
5
## **TYPICAL CHARACTERISTICS — 2110--2170 MHz**
**==> picture [295 x 397] intentionally omitted <==**
**----- Start of picture text -----**<br>
24 60 --25<br>VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier W--CDMA D<br>3.84 MHz Channel Bandwidth<br>23 Input Signal PAR = 9.9 dB ACPR 50 --30<br>@ 0.01% Probability on CCDF<br>22 Gps 2170 MHz 40 --35<br>2140 MHz<br>2110 MHz<br>21 2110 MHz 30 --40<br>2170 MHz 2140 MHz<br>20 20 --45<br>2170 MHz<br>2140 MHz<br>19 10 --50<br>aN 2110 MHz<br>18 THI LIN 0 --55<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 6. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>24 35<br>Gain<br>22 25<br>pi tt<br>20 15<br>pf t VDD = 28 Vdc e e<br>Pin = 0 dBm<br>18 |eer IDQ = 90 mA TN| 5<br>16 --5<br>| | | |<br>IRL<br>14 --15<br>po) [TN]<br>12 --25<br>pt | tT tT yt<br>1950 1990 2030 2070 2110 2150 2190 2230 2270<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br>
**Figure 7. Broadband Frequency Response**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
6
**Table 8. Load Pull Performance — Maximum Power Tuning** VDD = 28 Vdc, IDQ = 87 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
||VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mA|VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mADQ = 87 mA= 87 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|||
|---|---|---|---|---|---|---|---|---|---|
||||||**Max Output Power**|||||
|||||||**P1dB**||||
||**f**|**Zsource**|**Zin**|**Zload (1)**||||**D**|**AM/PM**|
||**(MHz)**|**(****)**|**(****)**|**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**(%)**|**(****)**|
||2110|1.23 -- j0.107|0.698 + j0.572|5.85 + j3.49|21.0|41.2|13|60.2|--12|
||2140|1.08 -- j0.422|0.877 + j0.537|5.79 + j3.28|20.8|41.2|13|59.5|--13|
||2170|1.12 -- j0.0337|1.26 + j0.455|5.57 + j3.12|20.7|41.1|13|60.1|--11|
|||||||||||
|**f**<br>**(MHz)**<br>**Zsource**<br>**(****)**<br>**Zin**<br>**(****)**<br>**Max Output Power**<br>**P3dB**<br>**Zload (2)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>2110<br>1.23 -- j0.107<br>0.592 + j0.741<br>6.75 + j2.96<br>18.7<br>42.0<br>16<br>59.6<br>--18<br>2140<br>1.08 -- j0.422<br>0.807 + j0.78<br>6.62 + j2.72<br>18.5<br>42.0<br>16<br>58.6<br>--20<br>2170<br>1.12 -- j0.0337<br>1.25 + j0.806<br>6.47 + j2.61<br>18.4<br>42.0<br>16<br>59.8<br>--17<br>~~Seeeeeee~~||||||||||
||(1) Load impedance for optimum P1dB power.|||||||||
||(2) Load impedance for optimum P3dB power.|||||||||
Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
**Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning**
VDD = 28 Vdc, IDQ = 87 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
||VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mA|VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mA|VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mADQ = 87 mA= 87 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle||||
|---|---|---|---|---|---|---|---|---|
|||||**Max Drain Efficiency**|||||
|||||**P1dB**|||||
||**f**||**Zsource**|**Zin**<br>**Zload (1)**|||**D**|**AM/PM**|
||**(MHz)**||**(****)**|**(****)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**|**(W)**||**(%)**|**(****)**|
||2110||1.23 -- j0.107|0.609 + j0.446<br>3.56 + j6.04<br>22.7<br>39.7||9|67.5|--20|
||2140||1.08 -- j0.422|0.736 + j0.434<br>3.63 + j5.62<br>22.4<br>39.9||10|66.6|--21|
||2170||1.12 -- j0.0337|1.03 + j0.312<br>3.37 + j5.39<br>22.5<br>39.6||9|67.3|--19|
|**f**<br>**(MHz)**<br>**Zsource**<br>**(****)**<br>**Zin**<br>**(****)**<br>**Max Drain Efficiency**<br>**P3dB**<br>**Zload (2)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>2110<br>1.23 -- j0.107<br>0.512 + j0.627<br>3.80 + j5.81<br>20.5<br>40.5<br>11<br>67.3<br>--29<br>2140<br>1.08 -- j0.422<br>0.671 + j0.667<br>3.77 + j5.41<br>20.3<br>40.6<br>11<br>65.9<br>--31<br>2170<br>1.12 -- j0.0337<br>1.05 + j0.666<br>3.83 + j5.15<br>20.2<br>40.6<br>12<br>67.1<br>--27<br>(1) Load impedance for optimum P1dB efficiency.<br>(2) Load impedance for optimum P3dB efficiency.<br>Zsource = Measured impedance presented to the input of the device at the package reference plane.<br>Zin<br>= Impedance as measured from gate contact to ground.<br>~~sae eeeer~~|||||||||
||Zload<br>=|Measured impedance presented to the output of the device at the package reference plane.<br>Input Load Pull<br>Tuner and Test<br>Circuit<br>Device<br>Under<br>Test<br>Output Load Pull<br>Tuner and Test<br>Circuit<br>P~~n lr~~|||||||
|||||**Zsource**<br>**Zin**<br>**Zload**|||||
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
7
**P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz**
**==> picture [498 x 391] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 8<br>37.5 38.5 39.5 40<br>7 7<br>VM 38 39 Sie 64 62 60 52<br>6 CATae 6 ZENO<br>E 40.5 E<br>66<br>5 5<br>Yee 41 TEPtr) |6 6AAYTE 58<br>4 4<br>DOA a Oe SS 2<br>3 (aér-mm) P 3 P 56<br>im e SS==—Z24aerA 54 52<br>2 RS 2<br>39.5 > SS 50<br>1 1<br>RSS EOS<br>38 39<br>0 SSW] 0 Er<br>2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10<br>REAL () REAL ()<br>Figure 8. P1dB Load Pull Output Power Contours (dBm) Figure 9. P1dB Load Pull Efficiency Contours (%)<br>8 8<br>23.5 --26 --20<br>7 7<br>Tye 23 22.5 VAT, ORO --28 --22 --18<br>6 ee Ay 6<br>E a e ) E en)<br>22<br>5 5<br>Sore) I<br>21.5 --16<br>4 4<br>SS 21 --24<br>P P<br>3 SS TO 20.5 A e 3 )ET --14 oT<br>2 CSS 20 2 eee<br>1 1<br>TASES] Ee<br>19.5 --12<br>0 a 0<br>2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 10. P1dB Load Pull Gain Contours (dB)**
**Figure 11. P1dB Load Pull AM/PM Contours (** **)**
**NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency
Gain
Drain Efficiency Linearity Output Power
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
8
## **P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz**
**==> picture [498 x 388] intentionally omitted <==**
**----- Start of picture text -----**<br>
8 8<br>38 39 40<br>7 7<br>W 38.5 A 39.5 ACans= 40.5 41 ZZ 54<br>6 6<br>VACA Te) ALTA<br>E 41.5 E 64 62 60<br>5 5<br>WLLL Cho TA<br>58<br>4 4<br>VI JA NSAP ini<br>3 3<br>ea Ane P NS=8 P 2700 56<br>2 2<br>Ke BSS 54<br>52<br>1 1<br>WAAN PSS 50<br>0 NN 0 eere<br>2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10<br>REAL () REAL ()<br>Figure 12. P3dB Load Pull Output Power Contours (dBm) Figure 13. P3dB Load Pull Efficiency Contours (%)<br>8 8<br>21.5<br>7 7<br>Be a/2n/ mya AAA<br>21 20.5 --32<br>6 — on AD a 6 VV VISAEA AT T II<br>E 20 E --28<br>5 5<br>ro eT | UA<br>19.5 --34 --30 --26<br>4 See 4 WA ET V<br>19<br>--24 --22<br>3 3<br>SS P 18.5 BALL P IT<br>2 2<br>PASE 18 ZEA<br>--20<br>1 ESE Sr 1 e r A |7T|<br>17.5<br>0 ee 0 eit e| | ft<br>2 3 4 5 6 7 8 9 10 2 3 4 5 6 7 8 9 10<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 12. P3dB Load Pull Output Power Contours (dBm)**
**Figure 13. P3dB Load Pull Efficiency Contours (%)**
**Figure 15. P3dB Load Pull AM/PM Contours (** **)**
**Figure 14. P3dB Load Pull Gain Contours (dB)**
> **NOTE:** O P = Maximum Output Power O E = Maximum Drain Efficiency
Gain
Drain Efficiency Linearity Output Power
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
9
**==> picture [462 x 341] intentionally omitted <==**
**----- Start of picture text -----**<br>
2500--2700 MHz<br>° 00000000000000 °<br>° °<br>° VGG ° VDD °<br>° ° ° ° ° hl ° °<br>° °<br>° 00000000000000000000000000000 9 ° ° 00000000000000\ So °<br>8 °° ° ° ° C13 °<br>° $ ° ° C12 of ° °<br>°° °°:° C5C6 °°°SL° |°°CO 0°poe) covccvees C11 °)oT]q| °°°°° °°°°°<br>C7<br>2 ) © ° 8 a 3 3<br>8 é oD 0000 f— ° °<br>3 ° Za 3° 00 odtewlo 000000000 8<br>©200900000 gggQg0000000000000000 °0 R1 SeferXe) 00000000000000000000000000000°<br>C1 C4<br>Q1<br>|_| _ C3 |_|<br>°° ooc0o000 PP99P9E PO OFO EFL CO FOO C2 © Pt°°0° 0000 0 000000000000000000000000000000000000003<br>3° °0000000000000000000°°? 0000 |—| °° °°<br>°5 oo0° C8 °° °°<br>°° OQ °°oc°co 000000000<br>C9 qor AFT27S010N<br>C10 Rev. 2<br>esSo? ™ D53817 °° 2300MHz/2500MHz<br>semiconductorie °° 0000000000000000000 8<br>°°<br>°<br>°° ° VDD °<br>° ° °<br>°<br>° °<br>0000000000000000000000000000000000 0000000000000 °<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>Figure 16. AFT27S010NT1 Test Circuit Component Layout — 2500--2700 MHz<br>**----- End of picture text -----**<br>
**Table 10. AFT27S010NT1 Test Circuit Component Designations and Values — 2500--2700 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C4, C5, C7, C8|6.8 pF Chip Capacitors|ATC100B6R8JT500XT|ATC|
|C2|1.2 pF Chip Capacitor|ATC100B1R2JT500XT|ATC|
|C3|1 pF Chip Capacitor|ATC100B1R0JT500XT|ATC|
|C6, C9, C10, C11, C12|10F Chip Capacitors|GRM32ER61H106KA12L|Murata|
|C13|220F, 50 V Electrolytic Capacitor|227CKS050M|Illinois Capacitor|
|Q1|RF Power LDMOS Transistor|AFT27S010NT1|Freescale|
|R1|4.75Chip Resistor|CRCW12064R75FKEA|Vishay|
|PCB|Rogers RO4350B, 0.020,r= 3.66|D53817|MTL|
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
10
## **TYPICAL CHARACTERISTICS — 2500--2700 MHz**
**==> picture [349 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
23.5 24<br>23 ee ee D 23<br>22.5 ee eee 22<br>22 VDD = 28 Vdc, Pout = 1.26 W (Avg.) | [oS] 21<br>IDQ = 90 mA, Single--Carrier W--CDMA<br>21.5 20<br>21 Po 3.84 MHz Channel Bandwidth pot Gps --36 0 0<br>IRL<br>20.5 --38 --5 --0.5<br>20 ee PARC ee ae --40 --10 --1<br>19.5 --42 --15 --1.5<br>19 ACPR Input Signal PAR = 9.9 dB @ 0.01% --44 --20 --2<br>Probability on CCDF<br>18.5 NNET | | | \ --46 | --25 | --2.5<br>2480 2510 2540 2570 2600 2630 2660 2690 2720<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br>
**Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg.**
**==> picture [295 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
24 65 --10<br>VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier, W--CDMA<br>3.84 MHz Channel Bandwidth, Input Signal = 9.9 dB @<br>22 0.01% Probability on CCDF 55 --20<br>20 Gps 2500 MHz 45 --30<br>ACPR 2700 MHz<br>18 35 --40<br>2700 MHz<br>2600 MHz<br>16 25 --50<br>2600 MHz<br>2500 MHz D 2500 MHz<br>14 2700 MHz 15 --60<br>2600 MHz<br>12 TUE 5 --70<br>fy rr<br>0.3 1 10 20<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>**----- End of picture text -----**<br>
**Figure 18. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power**
**==> picture [257 x 177] intentionally omitted <==**
**----- Start of picture text -----**<br>
30 10<br>VDD = 28 Vdc<br>25 Pin = 0 dBm ef 5<br>IDQ = 90 mA Gain |<br>20 0<br>See<br>15 --5<br>10 --10<br>rN IRL ee<br>5 po --15<br>0 | | | --20<br>pt NY<br>2300 2400 2500 2600 2700 2800 2900<br>f, FREQUENCY (MHz)<br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br>
**Figure 19. Broadband Frequency Response**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
11
**==> picture [462 x 316] intentionally omitted <==**
**----- Start of picture text -----**<br>
2300--2400 MHz<br>00000000000000 °<br>$<br>° S VGG °° VDD °°<br>f° ° 0 °<br>° ° °<br>6 ° 000000000000000000000000000006 8 ° ° oooccc 0 000cow doo °°<br>° °° ° ° ° ° °q ° ° C13 oO°<br>° C12<br>° ° °° °° oOoT] °° °8<br>° ° C6 ° ° C11 oO ) ° °<br>3 3 C5 ot!° | OC) Oe00()°° ccccc0cce °° 3°<br>° oS ) ) ° 3 So C7 ° 8<br>° e9900 ° 8000000,, oo000°° — °° °°<br>6 ° Sa 0° 00 0 obsslo pa g 000000 °<br>2229999090 ggg Q00000000000000000 ° R1 0228 | eoo0cc0000 00002 0000000000000000 O<br>C1 C14 C4<br>Q1<br>C3<br>° eo0000000 2999990000 ooo0co ooo000 ° 250%]0°oo -—oo000000000000 0900000000 O00000<br>° ° 2° oooofj o o0000000 00 °<br>° 0000000000000000000°°° — ° — ° °<br>°° C2 e°oo C8 °° °°<br>° CO O°%%ec()oo ceccccece<br>C9 AFT27S010N<br>oT<br>esSoF%PSq ™ D53817 C10 °°dJ Rev. 22300MHz/2500MHz<br>semiconductor °° 0000000000000000000 °8<br>°°<br>°<br>°° ° VDD °<br>° ° °<br>°<br>° °<br>0000000000000000000000000000000000 0000000000000 °<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>**----- End of picture text -----**<br>
**Figure 20. AFT27S010NT1 Test Circuit Component Layout — 2300--2400 MHz**
**Table 11. AFT27S010NT1 Test Circuit Component Designations and Values — 2300--2400 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C4, C5, C7, C8|6.8 pF Chip Capacitors|ATC100B6R8JT500XT|ATC|
|C2, C14|1 pF Chip Capacitors|ATC100B1R0JT500XT|ATC|
|C3|1.2 pF Chip Capacitor|ATC100B1R2JT500XT|ATC|
|C6, C9, C10, C11, C12|10F Chip Capacitors|GRM32ER61H106KA12L|Murata|
|C13|220F, 50 V Electrolytic Capacitor|227CKS050M|Illinois Capacitor|
|Q1|RF Power LDMOS Transistor|AFT27S010NT1|Freescale|
|R1|4.75, Chip Resistor|CRCW12064R75FKEA|Vishay|
|PCB|Rogers RO4350B, 0.020,r= 3.66|D53817|MTL|
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
12
## **TYPICAL CHARACTERISTICS — 2300--2400 MHz**
**==> picture [350 x 618] intentionally omitted <==**
**----- Start of picture text -----**<br>
22 24<br>21.8 ee VDD = 28 Vdc a eeee 23<br>21.6 Pout = 1.26 W (Avg.) 22<br>21.4 B IDQ = 90 mA war TSN e D 21<br>Single--Carrier W--CDMA<br>21.2 Gps 3.84 MHz Channel Bandwidth 20<br>21 A Input Signal PAR = 9.9 dB @ ai --39 0 0<br>0.01% Probability on CCDF ACPR<br>20.8 N=ee eee --40 --5 --0.5<br>20.620.4 a TN PARC rN --41--42 --10--15 --1--1.5<br>IRL<br>20.2 ee. Gee --43 --20 --2<br>20 ee eee --44 --25 --2.5<br>2290 2305 2320 2335 2350 2365 2380 2395 2410<br>f, FREQUENCY (MHz)<br>Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression<br>(PARC) Broadband Performance @ Pout = 1.26 W Avg.out = 1.26 W Avg. = 1.26 W Avg.<br>26 60 10<br>VDD = 28 Vdc, IDQ = 90 mA, Single--Carrier<br>W--CDMA, 3.84 MHz Channel Bandwidth<br>24 Input Signal = 9.9 dB @ 0.01% Dae 2300 MHz 50 0<br>Probability on CCDF<br>22 S ere ee 2400 MHz2350 MHz 40 --10<br>20 G ps 30 --20<br>18 2350 MHz 20 --30<br>A D ACPR 2300 MHz<br>16 2350 MHz 10 --40<br>2300 MHz<br>2400 MHz 2400 MHz<br>14 0 --50<br>0.3 1 10 20<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 22. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>30 5<br>25 0<br>pf fo Gain fo ff<br>20 --5<br>pS<br>15 BAN NE --10<br>10 YAP ES --15<br>IRL<br>VDD = 28 Vdc<br>5 P in = 0 dBm --20<br>IDQ = 90 mA<br>0 p+ YO --25<br>Pt ty<br>2050 2150 2250 2350 2450 2550 2650<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br>
**Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg.out = 1.26 W Avg. = 1.26 W Avg.**
**Figure 23. Broadband Frequency Response**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
13
**Table 12. Load Pull Performance — Maximum Power Tuning**
VDD = 28 Vdc, IDQ = 87 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
|VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mA|VDD = 28 Vdc, IDQ = 87 mADD = 28 Vdc, IDQ = 87 mA= 28 Vdc, IDQ = 87 mADQ = 87 mA= 87 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|
|---|---|---|---|---|---|---|---|---|
|**f**<br>**(MHz)**<br>2300<br>2400|**Zsource**<br>**(****)**<br>1.12 -- j1.10<br>1.06 -- j1.59|**Zin**<br>**(****)**<br>0.995 + j1.38<br>0.948 + j1.96|**Max Output Power**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>5.39 + j2.23<br>20.1<br>40.9<br>12<br>55.9<br>--12<br>5.09 + j1.86<br>19.8<br>40.9<br>12<br>55.1<br>--12<br>~~one~~||||||
|2500|1.00 -- j1.60|1.29 + j1.95|4.51 + j1.56|19.2|40.8|12|55.8|--10|
|2600|0.985 -- j3.50|0.743 + j3.66|4.81 + j1.10|19.0|41.3|13|56.2|--14|
|2690|1.10 -- j3.13|1.48 + j2.98|4.14 + j0.987|19.0|41.0|13|57.5|--12|
||||||||||
|||||**Max Output Power**|||||
||||||**P3dB**||||
|**f**|**Zsource**|**Zin**|**Zload (2)**||||**D**|**AM/PM**|
|**(MHz)**|**(****)**|**(****)**|**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**(%)**|**(****)**|
|2300|1.12 -- j1.10|0.919 + j1.64|6.28 + j1.74|17.8|41.7|15|55.0|--19|
|2400|1.06 -- j1.59|0.861 + j2.23|5.86 + j1.41|17.5|41.7|15|54.4|--19|
|2500|1.00 -- j1.60|1.37 + j2.32|5.40 + j1.17|16.9|41.7|15|55.8|--17|
|2600|0.985 -- j3.50|0.579 + j3.82|5.37 + j0.912|16.9|42.0|16|55.8|--22|
|2690|1.10 -- j3.13|1.74 + j3.43|5.04 + j0.759|16.8|41.8|15|57.1|--18|
(1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power.
Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
**Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning** VDD = 28 Vdc, IDQ = 87 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
|**f**<br>**(MHz)**<br>2300<br>2400<br>2500|**Zsource**<br>**(****)**<br>1.12 -- j1.10<br>1.06 -- j1.59<br>1.00 -- j1.60|**Zin**<br>**(****)**<br>0.855 + j1.22<br>0.829 + j1.80<br>1.04 + j1.82|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|**Max Drain Efficiency**<br>**P1dB**<br>**Zload (1)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>3.36 + j4.23<br>21.6<br>39.8<br>9<br>61.9<br>--20<br>3.34 + j3.53<br>21.2<br>39.9<br>10<br>60.4<br>--19<br>3.21 + j3.00<br>20.8<br>40.0<br>10<br>61.1<br>--16<br>~~=z~~|
|---|---|---|---|---|---|---|---|---|
|2600|0.985 -- j3.50|0.709 + j3.49|3.17 + j2.53|20.0|40.5|11|60.7|--20|
|2690|1.10 -- j3.13|1.14 + j2.91|2.87 + j2.16|20.4|40.2|10|62.0|--18|
||||||||||
|||||**Max Drain Efficiency**|||||
||||||**P3dB**||||
|**f**|**Zsource**|**Zin**|**Zload (2)**||||**D**|**AM/PM**|
|**(MHz)**|**(****)**|**(****)**|**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**(%)**|**(****)**|
|2300|1.12 j1.10|0.803 + j1.51|3.96 + j4.10|19.4|40.7|12|61.1|--27|
|2400|1.06 -- j1.59|0.757 + j2.07|3.70 + j3.45|19.1|40.6|12|59.8|--27|
|2500|1.00 -- j1.60|1.15 + j2.18|3.58 + j2.94|18.7|40.8|12|61.2|--24|
|2600|0.985 -- j3.50|0.556 + j3.73|4.15 + j2.29|17.8|41.5|14|59.7|--26|
|2690|1.10 -- j3.13|1.43 + j3.33|3.40 + j2.01|18.2|41.1|13|61.7|--25|
(1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency.
Zsource = Measured impedance presented to the input of the device at the package reference plane.
Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
Input Load Pull Device Output Load Pull Tuner and Test Under Tuner and Test Circuit Test Circuit o ~~y lr~~ **Zsource Zin Zload**
**AFT27S010NT1**
RF Device Data
Freescale Semiconductor, Inc.
14
**P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz**
**==> picture [497 x 389] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 6<br>37 38 38.5 39 46 46<br>5 5<br>eee] 37.5 39.5 LE 2EE SE<br>40<br>4 4<br>AES Zee<br>3 E 3 E<br>Caer<br>40.5 60 58 56 52<br>2 Ze tT | |) 2 Fe ESNANA N<br>nn ee Se<br>P P 54 50 48<br>1 a 1 ae<br>a SS = ee<br>46<br>0 0<br>Wi<br>39 39.5 40<br>--1 --1<br>Ses SC—<ee e e— ia ——<br>2 3 4 5 6 7 8 2 3 4 5 6 7 8<br>REAL () REAL ()<br>Figure 24. P1dB Load Pull Output Power Contours (dBm) Figure 25. P1dB Load Pull Efficiency Contours (%)<br>6 6<br>5 LT VAAZZ, 5 AANA<br>22 21.5 --22<br>4 4<br>y 21 s 20.5 2 een --24 --20 --16 XK<br>20<br>3 E 3 E<br>———e e 19.5 e Wi --18 --14 a ss)eee<br>2 2<br>=a J 2<br>P --12 P<br>19<br>1 1<br>SSS 18 ee 18.5 e ee a --10 ee<br>0 0<br>PSS Wk A||<br>--1 a STOKE --1 TTT<br>2 3 4 5 6 7 8 2 3 4 5 6 7 8<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 25. P1dB Load Pull Efficiency Contours (%)**
**Figure 27. P1dB Load Pull AM/PM Contours (** **)**
**Figure 26. P1dB Load Pull Gain Contours (dB)**
> **NOTE:** O P = Maximum Output Power O E = Maximum Drain Efficiency
Gain Drain Efficiency Linearity Output Power
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
15
## **P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz**
**==> picture [497 x 388] intentionally omitted <==**
**----- Start of picture text -----**<br>
6 6<br>37.5 38 39 46 48 50 50 48<br>5 5<br>38.5 39.5<br>40 40.5<br>4 4<br>Ce tL EES<br>41<br>3 E 3 E<br>We 41.5 | e t )))| 6 CSINNIN 60 58 A 56 SY<br>2 2<br>i ee eee<br>54 52<br>1 P 1 P<br>(an are) e ee Se 50<br>48<br>0 0<br>[ANIE (SSS<br>40 46<br>--1 CSS 41 --1 (SS S<br>2 3 4 5 6 7 8 2 3 4 5 6 7 8<br>REAL () REAL ()<br>Figure 28. P3dB Load Pull Output Power Contours (dBm) Figure 29. P3dB Load Pull Efficiency Contours (%)<br>6 6<br>--14<br>--22<br>5 5<br>-TVAZAZIZ) 20 19.5 RXYA\NTE-= --28 --24<br>4 4<br>ayy 19 18.5 18 Y IANAAN --30 --26 --20 --18 XT<br>3 E 3 E<br>Se EY SINT<br>17.5 --16<br>2 2<br>SS DT<br>17<br>1 P 1 P<br>SSS 16.5 TV<br>16<br>0 0<br>CSS STO<br>--1 ee --1<br>2 3 4 5 6 7 8 2 3 4 5 6 7 8<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 29. P3dB Load Pull Efficiency Contours (%)**
**Figure 31. P3dB Load Pull AM/PM Contours (** **)**
**Figure 30. P3dB Load Pull Gain Contours (dB)**
> **NOTE:** O P = Maximum Output Power O E = Maximum Drain Efficiency
Gain Drain Efficiency Linearity Output Power
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
16
## **TYPICAL CHARACTERISTICS — 3400--3600 MHz**
**==> picture [347 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
18 19<br>VDD = 28 Vdc, Pout = 1.26 W (Avg.)<br>17.5 I DQ = 80 mA, Single--Carrier W--CDMA 18<br>17 TEE 3.84 MHz Channel Bandwidth |_| 17<br>16.5 Input Signal PAR = 9.9 dB @ 0.01% 16<br>D Probability on CCDF<br>16 =>—] | | 15<br>15.5 ee Gps --43.5 0 --0.6<br>15 --44 --2 --0.8<br>PARC<br>14.5 --44.5 --4 --1<br>14 --45 --6 --1.2<br>ACPR<br>13.5 --45.5 --8 --1.4<br>IRL<br>13 | | ToTee ee1 eee --46 7 --10 7 --1.6<br>3380 3410 3440 3470 3500 3530 3560 3590 3620<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br>
**Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg.**
**==> picture [290 x 397] intentionally omitted <==**
**----- Start of picture text -----**<br>
17 60 --10<br>VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier W--CDMA<br>3.84 MHz Channel Bandwidth, Input Signal PAR = 9.9 dB @ 0.01%<br>16 Probability on CCDF 50 --20<br>3500 MHz<br>15 ACPR 40 --30<br>3600 MHz<br>14 —=o 3400 MHz el he D 30 --40<br>PRD<br>3500 MHz 3400 MHz<br>13 20 --50<br>3600 MHz<br>3500 MHz<br>12 3600 MHz G ps 10 --60<br>11 eT 3400 MHz | LT 0 --70<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 33. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>18 2<br>VDD = 28 Vdc<br>16 P in = 0 dBm Gain 0<br>IDQ = 80 mA<br>14 AAPy TYNE --2<br>12 TINY LAL --4<br>10 --6<br>ANIA AL<br>IRL<br>8 PV | KAZE IN --8<br>6 VAeee --10<br>3100 3200 3300 3400 3500 3600 3700 3800 3900<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br>
**Figure 34. Broadband Frequency Response**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
17
**==> picture [462 x 323] intentionally omitted <==**
**----- Start of picture text -----**<br>
728--768 MHz<br>°00000000000000 °<br>lo° VGG ° fo} ° VDD ° °<br>°<br>°° ; ° C15 °||° || °e°<br>°° 00000000000000000000 5° C14 el]° || °0000000000000000000 °<br>°<br>83 ° ° C11 oo ° °<br>C10 ° °<br>° $ 8 all] 3 8<br>° ° ° fo) ° 8 [°]<br>g 8$° 3°°° — C6 Sooc000000(— C5 ooo fo)°S000O,000()°° eccccccce °°°° °°°3<br>°°22000000 °©0000000000000000 —| — p— | o0000000 o0000000000000000 °°<br>9¢499900000000000000000000000000 [_|{I} 888 00000000000000000000000000000000000000000 C8<br>R1 C7*<br>C1* [ C9*<br>90000000 [FOO] [OOOO] [OHO] [OTOL] {| [OOOH] _{PP|_|OOP POOP{|L_O°_ _ Se &,o00 __ ho0% 5 > 00000000000000000000000000000000000000000—<br>°° C2 C3 C4 Q1 000 0000000000000000 °°<br>° ooo000 °° oO<br>°°6 ° O°coo°° 000000000 } °<br>C12 ° AFT27S010N<br>aoe%e~*<af reescale” D53406 C13 oye°°a° Rev. 1728MHz<br>semiconductor C16 °8 i 0000000000000000000 }$<br>° C17 °°<br>°° ° VDD °<br>° ° °<br>°<br>° °<br>0000000000000000000000000000000000 0000000000000 °<br>*C1, C7 and C9 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>**----- End of picture text -----**<br>
**Figure 35. AFT27S010NT1 Test Circuit Component Layout — 728--768 MHz**
**Table 14. AFT27S010NT1 Test Circuit Component Designations and Values — 728--768 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C9|82 pF Chip Capacitors|ATC100B820JT500XT|ATC|
|C2|3.9 pF Chip Capacitor|ATC100B3R9JT500XT|ATC|
|C3|1.7 pF Chip Capacitor|ATC100B1R7JT500XT|ATC|
|C4|2.7 pF Chip Capacitor|ATC100B2R7JT500XT|ATC|
|C5, C10, C11, C12, C13|33 pF Chip Capacitors|ATC100B330JT500XT|ATC|
|C6, C14, C15, C16, C17|10F Chip Capacitors|GRM32ER61H106KA12L|Murata|
|C7|3.9 pF Chip Capacitor|ATC100B3R9JT500XT|ATC|
|C8|0.5 pF Chip Capacitor|ATC100B0R5JT500XT|ATC|
|Q1|RF Power LDMOS Transistor|AFT27S010NT1|Freescale|
|R1|10Chip Resistor|CWCR120610R0JNEA|Vishay|
|PCB|Rogers RO4350B, 0.020,r= 3.66|D53406|MTL|
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
18
## **TYPICAL CHARACTERISTICS — 728--768 MHz**
**==> picture [350 x 619] intentionally omitted <==**
**----- Start of picture text -----**<br>
24.7 27<br>VDD = 28 Vdc, Pout = 1.26 W (Avg.)<br>24.6 I DQ = 80 mA, Single--Carrier W--CDMA 26<br>24.5 cE | [FR | 25<br>3.84 MHz Channel Bandwidth D<br>24.4 Input Signal PAR = 9.9 dB @ 0.01% 24<br>24.3 _—-- Probability on CCDF -—= 23<br>Gps<br>24.2 Eee == ewe --40 --11 0<br>IRL<br>24.1 --41 --12 --0.2<br>24 ACPR PARC --42 --13 --0.4<br>23.9 ee --43 --14 --0.6<br>23.8 >. eee --44 --15 --0.8<br>23.7 paeT tT TUT || --45 | --16 : --1<br>710 720 730 740 750 760 770 780 790<br>f, FREQUENCY (MHz)<br>Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression<br>(PARC) Broadband Performance @ Pout = 1.26 W Avg.out = 1.26 W Avg. = 1.26 W Avg.<br>28 60 --10<br>VDD = 28 Vdc, IDQ = 80 mA, Single--Carrier 768 MHz<br>W--CDMA, 3.84 MHz Channel Bandwidth 748 MHz<br>26 Input Signal PAR = 9.9 dB @ 50 --20<br>0.01% Probability on CCDF 728 MHz<br>24 40 --30<br>Gps<br>22 LH 768 MHz 748 MHz oor 30 --40<br>ACPR 748 MHz<br>20 20 --50<br>—— 728 MHz |ANN 768 MHz e<br>18 D 728 MHz 10 --60<br>16 DireT T EE 0 --70<br>0.3 1 10 20<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 37. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>28 0<br>VDD = 28 Vdc<br>26 Pin = 0 dBm --2<br>IDQ = 80 mA<br>Gain<br>24 5, EE --4<br>Ch Se<br>22 --6<br>VY) PN Ye<br>20 --8<br>anew<br>18 --10<br>pt} A] [TTA] LS<br>IRL<br>16 Swe --12<br>550 600 650 700 750 800 850 900 950<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br>
**Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 1.26 W Avg.out = 1.26 W Avg. = 1.26 W Avg.**
**Figure 38. Broadband Frequency Response**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
19
## **Table 15. Load Pull Performance — Maximum Power Tuning**
VDD = 28 Vdc, IDQ = 81 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
||VDD = 28 Vdc, IDQ = 81 mADD = 28 Vdc, IDQ = 81 mA= 28 Vdc, IDQ = 81 mA|VDD = 28 Vdc, IDQ = 81 mADD = 28 Vdc, IDQ = 81 mA= 28 Vdc, IDQ = 81 mADQ = 81 mA= 81 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|||
|---|---|---|---|---|---|---|---|---|---|
||||||**Max Output Power**|||||
|||||||**P1dB**||||
||**f**|**Zsource**|**Zin**|**Zload (1)**||||**D**|**AM/PM**|
||**(MHz)**|**(****)**|**(****)**|**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**(%)**|**(****)**|
||728|2.05 + j12.1|1.72 -- j11.7|15.1 + j6.07|27.2|41.3|14|59.8|--15|
||748|2.04 + j11.1|1.69 -- j11.2|14.6 + j5.90|27.0|41.5|14|60.2|--15|
||768|1.94 + j10.5|1.69 -- j10.8|14.6 + j5.49|26.7|41.5|14|60.1|--14|
|**f**<br>**(MHz)**<br>**Zsource**<br>**(****)**<br>**Zin**<br>**(****)**<br>**Max Output Power**<br>**P3dB**<br>**Zload (2)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>728<br>2.05 + j12.1<br>1.53 -- j11.7<br>16.1 + j4.43<br>24.7<br>42.3<br>17<br>61.9<br>--17<br>748<br>2.04 + j11.1<br>1.50 -- j11.3<br>15.1 + j4.52<br>24.6<br>42.4<br>17<br>61.7<br>--17<br>768<br>1.94 + j10.5<br>1.46 -- j10.9<br>14.8 + j4.54<br>24.5<br>42.4<br>17<br>61.7<br>--16<br>~~Seaeeeee~~||||||||||
||(1) Load impedance for optimum P1dB power.|||||||||
||(2) Load impedance for optimum P3dB power.|||||||||
Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane.
**Table 16. Load Pull Performance — Maximum Drain Efficiency Tuning**
VDD = 28 Vdc, IDQ = 81 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle
||VDD = 28 Vdc, IDQ = 81 mADD = 28 Vdc, IDQ = 81 mA= 28 Vdc, IDQ = 81 mA|VDD = 28 Vdc, IDQ = 81 mADD = 28 Vdc, IDQ = 81 mA= 28 Vdc, IDQ = 81 mADQ = 81 mA= 81 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle|VDD = 28 Vdc, IDQ = 81 mADD = 28 Vdc, IDQ = 81 mA= 28 Vdc, IDQ = 81 mADQ = 81 mA= 81 mA**,**Pulsed CW, 10 sec(on), 10% Duty Cyclesec(on), 10% Duty Cyclesec(on), 10% Duty Cycle||||
|---|---|---|---|---|---|---|
|||**Max Drain Efficiency**|||||
|||**P1dB**|||||
||**f**|**Zsource**<br>**Zin**<br>**Zload (1)**|||**D**|**AM/PM**|
||**(MHz)**|**(****)**<br>**(****)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**|**(W)**||**(%)**|**(****)**|
||728|2.05 + j12.1<br>1.97 -- j10.7<br>18.5 + j16.4<br>27.9<br>39.7||9|68.4|--13|
||748|2.04 + j11.1<br>1.81 -- j9.83<br>16.7 + j20.1<br>28.6<br>38.9||8|68.5|--14|
||768|1.94 + j10.5<br>1.83 -- j9.69<br>17.4 + j18.0<br>28.3<br>39.5||9|69.2|--14|
|**f**<br>**(MHz)**<br>**Zsource**<br>**(****)**<br>**Zin**<br>**(****)**<br>**Max Drain Efficiency**<br>**P3dB**<br>**Zload (2)**<br>**(****)**<br>**Gain (dB)**<br>**(dBm)**<br>**(W)**<br>**D**<br>**(%)**<br>**AM/PM**<br>**(****)**<br>728<br>2.05 + j12.1<br>1.69 -- j10.8<br>18.3 + j18.6<br>26.1<br>40.3<br>11<br>73.7<br>--14<br>748<br>2.04 + j11.1<br>1.58 -- j10.4<br>17.5 + j17.5<br>26.4<br>40.5<br>11<br>77.4<br>--14<br>768<br>1.94 + j10.5<br>1.51 -- j9.87<br>15.8 + j19.1<br>26.8<br>40.0<br>10<br>72.8<br>--15<br>(1) Load impedance for optimum P1dB efficiency.<br>(2) Load impedance for optimum P3dB efficiency.<br>Zsource = Measured impedance presented to the input of the device at the package reference plane.<br>Zin<br>= Impedance as measured from gate contact to ground.<br>~~ae eeesr~~|||||||
||Zload<br>=|Measured impedance presented to the output of the device at the package reference plane.<br>Input Load Pull<br>Tuner and Test<br>Circuit<br>Device<br>Under<br>Test<br>Output Load Pull<br>Tuner and Test<br>Circuit<br>P~~n~~ ~~rr~~|||||
|||**Zsource**<br>**Zin**<br>**Zload**|||||
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
20
## **P1dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz**
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**----- Start of picture text -----**<br>
25 25<br>66<br>37.5 38 38.5<br>20 E 39 20 E<br>pe 39.5 IAA<br>68<br>15 40 15 Ce<br>ee 40.5 TS<br>66<br>10 10<br>eet A<br>41 64<br>P P 62<br>5 5<br>60<br>Kf lof | PX) See<br>58<br>56<br>0 0<br>54<br>SS 40 40.5 ED) LSS 52<br>--5 a i --5<br>10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24<br>REAL () REAL ()<br>Figure 39. P1dB Load Pull Output Power Contours (dBm) Figure 40. P1dB Load Pull Efficiency Contours (%)<br>25 25<br>--10<br>30.5 --12<br>20 E 20 E<br>PD 30 29.5 29 DALY | Bee ST<br>--22<br>15 15<br>Cie 28.5 Y 28 A Rpm --20 --18<br>27.5<br>10 10<br>eee e T 27 el Ee --16<br>P 26.5 P<br>5 5<br>Seer te EY to pb| --14<br>0 ee 0 Ge<br>--5 --5<br>10 PPT 12 14 16 Ete 18 20 22 t y 24 t) 10 et 12 14 tt 16 18 t 20 t 22 24<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 40. P1dB Load Pull Efficiency Contours (%)**
**Figure 42. P1dB Load Pull AM/PM Contours (** **)**
**Figure 41. P1dB Load Pull Gain Contours (dB)**
> **NOTE:** O P = Maximum Output Power O E = Maximum Drain Efficiency
Gain Drain Efficiency Linearity Output Power
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**P3dB -- TYPICAL LOAD PULL CONTOURS — 748 MHz**
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25 25<br>68<br>38.5 39<br>39.5 40<br>20 20<br>pLee E t 40.5 t4 6p, pe 74 E 76 72 70 e<br>15 41 15<br>41.5 68<br>10 Zea 10 AR<br>Se C ee<br>42 66<br>5 crest) P 5 Sse P 64<br>62<br>60<br>0 0<br>SAD) (SSS<br>41 41.5<br>--5 A SS --5 CE<br>10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24<br>REAL () REAL ()<br>Figure 43. P3dB Load Pull Output Power Contours (dBm) Figure 44. P3dB Load Pull Efficiency Contours (%)<br>25 25<br>28 27.5 27 26.5 --8<br>20 20<br>PSB DDI RAR ASSES<br>E 26 E --10<br>15 15<br>FT PET) S --24 --20 SNS --12<br>25.5 --22<br>10 10<br>25<br>e er LP U SN N --14 E<br>24.5<br>5 P 5 P<br>--18 --16<br>Seer 24 SS<br>0 SSS Pe 0 OETA<br>sees OL<br>--5 Sa --5 Ae s<br>10 12 14 16 18 20 22 24 10 12 14 16 18 20 22 24<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br>
**Figure 44. P3dB Load Pull Efficiency Contours (%)**
**Figure 46. P3dB Load Pull AM/PM Contours (** **)**
**Figure 45. P3dB Load Pull Gain Contours (dB)**
**NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency
Gain Drain Efficiency Linearity Output Power
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0.28<br>7.11<br>0.165<br>4.91<br>—<br>os<br>0.089 0.155<br>2.26 3.94<br>Solder pad with thermal via<br>structure. All dimensions in mm. Ree<br>0.085<br>2.16<br>_ io<br>**----- End of picture text -----**<br>
**Figure 47. PCB Pad Layout for PLD--1.5W**
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AFS10<br>N( )B<br>YYWW<br>**----- End of picture text -----**<br>
**Figure 48. Product Marking**
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## **PACKAGE DIMENSIONS**
**AFT27S010NT1**
RF Device Data Freescale Semiconductor, Inc.
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**AFT27S010NT1**
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**AFT27S010NT1**
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## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following resources to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to Software & Tools on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Nov. 2013|Initial Release of Data Sheet|
|1|Sept. 2014|Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect<br>actual reel size, p. 1<br>Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency<br>capability resulting from additional test data, p. 1|
|2|Nov. 2014|Added 3400--3600 MHz performance information as follows:<br>-- Typical Frequency Band table, p. 1<br>-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance<br>@ Pout= 1.26 W Avg., p. 17<br>-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17<br>-- Fig. 34, Broadband Frequency Response, p. 17|
|3|Dec. 2015|Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2<br>Table 5, Electrical Characteristics, On Characteristics VDS(on): updated IDunit of measure to mAdc to<br>reflect actual unit of measure, p. 2<br>Added Ordering Information Table 6, p. 3|
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## _**How to Reach Us:**_
**Home Page:** freescale.com
**Web Support:** freescale.com/support
Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.
Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions.
Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013–2015 Freescale Semiconductor, Inc.
**AFT27S010NT1**
~~& freescale~~ RF Device Data Freescale Semiconductor, Inc.
Document Number: AFT27S010N 28Rev. 3, 12/2015
Updated at April 10, 2026
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