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AFT27S006NT1
RF FET Transistor, 65 V, 728 MHz, 3700 MHz, PLD-1.5W
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:65V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:728MHz; Operating Frequency Max:37; Available until stocks are exhausted
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: AFT27S006N
- Power Dissipation: -
- Transistor Mounting: Surface Mount
- Transistor Case Style: PLD-1.5W
- Operating Frequency Max: 3700MHz
- Operating Frequency Min: 728MHz
- Drain Source Voltage Vds: 65V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 100 |
| Price | 9.82 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
**NXP Semiconductors** Technical Data Document Number: AFT27S006N Rev. 5, 12/2017 |**RF Power LDMOS Transistor**<br>N--Channel Enhancement--Mode Lateral MOSFET<br>This 28.8 dBm RF power LDMOS transistor is designed for cellular base<br>station applications covering the frequency range of 728 to 3700 MHz.<br>Typical Single--Carrier W--CDMA Performance: VDD= 28 Vdc,<br>IDQ= 65 mA, Pout= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**(1)**<br>**700 MHz**<br>**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>**IRL**<br>**(dB)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>--19<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>--17<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>--13<br>Typical Single--Carrier W--CDMA Performance: VDD= 28 Vdc,<br>IDQ= 70 mA, Pout= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**(1)**<br>**2100 MHz**<br>**728--3700 MHz, 28.8 dBm AVG., 28 V**<br>**AIRFAST RF POWER LDMOS**<br>**TRANSISTOR**<br>**AFT27S006NT1**<br>**PLD--1.5W**<br>**PLASTIC**<br>~~_~~<br>~~eee~~| |---| ## **RF Power LDMOS Transistor** ## N--Channel Enhancement--Mode Lateral MOSFET This 28.8 dBm RF power LDMOS transistor is designed for cellular base station applications covering the frequency range of 728 to 3700 MHz. - Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 65 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. **[(1)]** - Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc, IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. **[(1)] 2100 MHz** |**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>728 MHz<br>24.3<br>20.2<br>9.9<br>--45.6<br>748 MHz<br>24.4<br>19.9<br>9.9<br>--45.9<br>768 MHz<br>24.2<br>19.4<br>9.8<br>--46.2<br>Typical Single--Carrier W--CDMA Performance: VDD = 28 Vdc,DD = 28 Vdc,= 28 Vdc,<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF.**[(1)]**<br>**2100 MHz**<br>~~eee~~|**IRL**<br>**(dB)**<br>--19<br>--17<br>--13<br>IDQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%DQ = 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 70 mA, Pout = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%out = 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%= 28.8 dBm Avg., Input Signal PAR = 9.9 dB @ 0.01%<br>~~eee~~| |---|---|---|---|---|---|---| |**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>2110 MHz<br>22.2<br>18.3<br>9.2<br>--42.3<br>2140 MHz<br>22.8<br>19.8<br>9.5<br>--44.6<br>2170 MHz<br>22.5<br>20.2<br>9.3<br>--46.0<br>**2300 MHz**<br>**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Output PAR**<br>**(dB)**<br>**ACPR**<br>**(dBc)**<br>2300 MHz<br>22.9<br>20.9<br>9.8<br>--41.0<br>2350 MHz<br>23.5<br>21.5<br>9.4<br>--40.8<br>2400 MHz<br>23.0<br>22.4<br>8.9<br>--41.0<br>**2600 MHz**<br>~~SS~~||||||**IRL**<br>**(dB)**<br>--14<br>--17<br>--13<br>**IRL**<br>**(dB)**<br>--10<br>--24<br>--11| |||**Gps**|**D**|**Output PAR**|**ACPR**|**IRL**| ||**Frequency**|**(dB)**|**(%)**|**(dB)**|**(dBc)**|**(dB)**| ||2500 MHz|20.4|19.4|9.5|--44.0|--7| ||2600 MHz|22.0|21.2|9.1|--42.5|--16| ||2700 MHz|20.9|20.3|8.5|--40.9|--7| - RFin/VGS RFout/VDS (Top View) - Note: The center pad on the backside of the package is the source terminal for the transistor. **Figure 1. Pin Connections** ## **3500 MHz** |**Frequency**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Output PAR**<br>**(dB)**|**ACPR**<br>**(dBc)**|**IRL**<br>**(dB)**| |---|---|---|---|---|---| |3400 MHz|16.1|14.3|9.0|--44.1|--9| |3500 MHz|17.9|16.4|9.1|--46.2|--13| |3600 MHz|16.0|16.7|8.7|--44.4|--4| 1. All data measured in fixture with device soldered to heatsink. ## **Features** - Greater negative gate--source voltage range for improved Class C operation - Designed for digital predistortion error correction systems - Universal broadband driver 2013–2015, 2017 NXP B.V. **AFT27S006NT1** RF Device Data NXP Semiconductors 1 **Table 1. Maximum Ratings** |**Table 1. Maximum Ratings**|**Table 1. Maximum Ratings**||||| |---|---|---|---|---|---| |**Rating**||**Symbol**|**Value**||**Unit**| |Drain--Source Voltage||VDSS|--0.5, +65||Vdc| |Gate--Source Voltage||VGS|--6.0, +10||Vdc| |Operating Voltage||VDD|32, +0||Vdc| |Storage Temperature Range||Tstg|--65 to +150||C| |Case Operating Temperature Range||TC|--40 to +150||C| |Operating Junction Temperature Range **(1,2)**||TJ|--40 to +150||C| |**Table 2. Thermal Characteristics**|||||| |**Characteristic**||**Symbol**|**Value (2,3)**||**Unit**| |Thermal Resistance, Junction to Case<br>Case Temperature 78C, 0.76 W CW, 28 Vdc, IDQ= 70 mA, 2140 MHz||RJC|3.4||C/W| |**Table 3. ESD Protection Characteristics**|||||| |**Test Methodology**|||**Class**||| |Human Body Model (per JESD22--A114)|||1B||| |Machine Model (per EIA/JESD22--A115)|||A||| |Charge Device Model (per JESD22--C101)|||III||| |**Table 4. Moisture Sensitivity Level**|||||| |**Test Methodology**|**Rating**|**Package Peak Temperature**|||**Unit**| |Per JESD22--A113, IPC/JEDEC J--STD--020|3||260||C| |**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|||||| |**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**Off Characteristics**|||||| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 65 Vdc, VGS= 0 Vdc)|IDSS|—|—|10|Adc| |Zero Gate Voltage Drain Leakage Current<br>(VDS= 28 Vdc, VGS= 0 Vdc)|IDSS|—|—|1|Adc| |Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)|IGSS|—|—|1|Adc| |**On Characteristics**|||||| |Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 7.7Adc)|VGS(th)|0.8|1.2|1.6|Vdc| |Gate Quiescent Voltage<br>(VDD= 28 Vdc, ID= 70 mAdc, Measured in Functional Test)|VGS(Q)|1.5|1.8|2.3|Vdc| |Drain--Source On--Voltage<br>(VGS= 6 Vdc, ID= 77 mAdc)|VDS(on)|0.1|0.2|0.3|Vdc| 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.nxp.com/RF/calculators. 3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. (continued) **AFT27S006NT1** RF Device Data NXP Semiconductors 2 **Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** |**Characteristic**|**Characteristic**|**Symbol**|**Min**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**Functional Tests**(In NXP Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 70 mA, Pout= 28.8 dBm Avg., f = 2170 MHz, Single--Carrier<br>W--CDMA, IQ Magnitude Clipping, Input Signal PAR = 9.9 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel<br>Bandwidth @5 MHz Offset.|||||||| |Power Gain||Gps|21.0||22.0|24.5|dB| |Drain Efficiency||D|17.0||20.0|—|%| |Adjacent Channel Power Ratio||ACPR|—||--44.0|--38.5|dBc| |Input Return Loss||IRL|—||--16|--10|dB| |**Load Mismatch**(In NXP Test Fixture, 50 ohm system) IDQ= 70 mA, f = 2140 MHz|||||||| |VSWR 5:1 at 32 Vdc, 8.1 W CW Output Power<br>(3 dB Input Overdrive from 6 W CW Rated Power)|||No Device Degradation||||| |**Typical Performance**(In NXP Test Fixture, 50 ohm system) VDD= 28 Vdc, IDQ= 70 mA, 2110--2170|||||MHz Bandwidth||| |Pout@ 1 dB Compression Point, CW||P1dB|—||6|—|W| |AM/PM<br>(Maximum value measured at the P3dB compression point across<br>the 2110--2170 MHz frequency range.)|||—||--10.2|—|| |VBW Resonance Point<br>(IMD Third Order Intermodulation Inflection Point)||VBWres|—||80|—|MHz| |Gain Flatness in 60 MHz Bandwidth @ Pout= 28.8 dBm Avg.||GF|—||0.053|—|dB| |Gain Variation over Temperature<br>(--30C to +85C)||G|—||0.012|—|dB/C| |Output Power Variation over Temperature<br>(--30C to +85C)||P1dB|—||0.004|—|dB/C| |**Table 6. Ordering Information**|||||||| |**Device**|**Tape and Reel Information**|||||**Package**|| |AFT27S006NT1|T1 Suffix = 1000 Units, 16 mm Tape Width, 7--inch Reel|||PLD--1.5W|||| **AFT27S006NT1** RF Device Data NXP Semiconductors 3 |**Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz**<br>C7<br>C6<br>R1<br>C2<br>C1*<br>C13<br>C12<br>C4<br>C5*<br>C3<br>C8<br>C9<br>C10<br>C11<br>AFT27S006N<br>Rev. 2<br>2100MHz<br>*C1 and C5 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>Q1<br>D51056<br>VDD<br>VGG<br>VDD<br>**Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**|**Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz**<br>C7<br>C6<br>R1<br>C2<br>C1*<br>C13<br>C12<br>C4<br>C5*<br>C3<br>C8<br>C9<br>C10<br>C11<br>AFT27S006N<br>Rev. 2<br>2100MHz<br>*C1 and C5 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>Q1<br>D51056<br>VDD<br>VGG<br>VDD<br>**Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**|**Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz**<br>C7<br>C6<br>R1<br>C2<br>C1*<br>C13<br>C12<br>C4<br>C5*<br>C3<br>C8<br>C9<br>C10<br>C11<br>AFT27S006N<br>Rev. 2<br>2100MHz<br>*C1 and C5 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>Q1<br>D51056<br>VDD<br>VGG<br>VDD<br>**Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**|**Figure 2. AFT27S006NT1 Test Circuit Component Layout — 2110--2170 MHz**<br>C7<br>C6<br>R1<br>C2<br>C1*<br>C13<br>C12<br>C4<br>C5*<br>C3<br>C8<br>C9<br>C10<br>C11<br>AFT27S006N<br>Rev. 2<br>2100MHz<br>*C1 and C5 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>Q1<br>D51056<br>VDD<br>VGG<br>VDD<br>**Table 7. AFT27S006NT1 Test Circuit Component Designations and Values — 2110--2170 MHz**| |---|---|---|---| |**Part**|**Description**|**Part Number**|**Manufacturer**| |C1, C5, C6, C8, C9|9.1 pF Chip Capacitors|ATC100B39R1JT500XT|ATC| |C2|1.2 pF Chip Capacitor|ATC100B1R2JT500XT|ATC| |C3|2.7 pF Chip Capacitor|ATC100B2R7JT500XT|ATC| |C4|1.5 pF Chip Capacitor|ATC100B1R5JT500XT|ATC| |C7, C10, C11, C12, C13|10F Chip Capacitors|GRM32ER61H106KA12L|Murata| |Q1|RF Power LDMOS Transistor|AFT27S006N|NXP| |R1|4.75, 1/4 W Chip Resistor|CRCW12064R75FNEA|Vishay| |PCB|Rogers RO4350B, 0.020,r= 3.66|D51056|MTL| **AFT27S006NT1** RF Device Data NXP Semiconductors 4 ## **TYPICAL CHARACTERISTICS — 2110--2170 MHz** **==> picture [342 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 26 22<br>25 20<br>D<br>24 VDD = 28 Vdc, Pout = 28.8 dBm (Avg.) 18<br>23 IDQ = 70 mA, Single--Carrier W--CDMA 16<br>22 Gps 3.84 MHz Channel Bandwidth 14<br>21 IRL Input Signal PAR = 9.9 dB @ 0.01% --37 --6 --0.2<br>Probability on CCDF<br>20 --39 --10 --0.4<br>19 PARC --41 --14 --0.6<br>18 --43 --18 --0.8<br>17 ACPR --45 --22 --1<br>16 --47 --26 --1.2<br>2060 2080 2100 2120 2140 2160 2180 2200 2240<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br> **Figure 3. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28.8 dBm Avg.** **==> picture [357 x 396] intentionally omitted <==** **----- Start of picture text -----**<br> --20<br>IM3--U<br>--30<br>IM3--L<br>--40 IM5--L<br>IM5--U<br>IM7--L<br>--50<br>IM7--U<br>--60 VDD = 28 Vdc, Pout = 5.6 W (PEP), IDQ = 70 mA<br>Two--Tone Measurements, (f1 + f2)/2 = Center<br>Frequency of 2140 MHz<br>--70<br>1 10 100 200<br>TWO--TONE SPACING (MHz)<br>Figure 4. Intermodulation Distortion Products<br>versus Two--Tone Spacing<br>24 2 40 --20<br>VDD = 28 Vdc, IDQ = 70 mA, f = 2140 MHz<br>Single--Carrier W--CDMA, 3.84 MHz Channel D<br>23.5 1 Bandwidth, Input Signal PAR = 9.9 dB @ 0.01% 35 --25<br>Probability on CCDF<br>23 0 30 --30<br>--2 dB = 1.1 W<br>22.5 --1 G ps 25 --35<br>--1 dB = 0.45 W<br>--3 dB = 1.55 W<br>22 --2 20 --40<br>ACPR<br>21.5 --3 15 --45<br>PARC<br>21 --4 10 --50<br>0 0.5 1 1.5 2 2.5<br>Pout, OUTPUT POWER (WATTS)<br>IMD, INTERMODULATION DISTORTION (dBc)<br>ACPR (dBc)<br>, POWER GAIN (dB) DRAIN EFFICIENCY (%)<br>Gps D<br><br>PROBABILITY ON CCDF (dB)<br>OUTPUT COMPRESSION AT 0.01%<br>**----- End of picture text -----**<br> **Figure 5. Output Peak--to--Average Ratio Compression (PARC) versus Output Power** **AFT27S006NT1** RF Device Data NXP Semiconductors 5 ## **TYPICAL CHARACTERISTICS — 2110--2170 MHz** **==> picture [298 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 24 60 --20<br>VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA<br>3.84 MHz Channel Bandwidth 2140 MHz<br>23 50 --25<br>2110 MHz<br>22 40 --30<br>2170 MHz Gps<br>21 Input Signal PAR = 9.9 dB 30 --35<br>@ 0.01% Probability on CCDF<br>ACPR<br>20 20 --40<br>2170 MHz D<br>2140 MHz<br>19 10 --45<br>2110 MHz<br>18 0 --50<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 6. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>24 35<br>Gain<br>22 25<br>20 15<br>VDD = 28 Vdc<br>Pin = 0 dBm<br>18 IDQ = 70 mA 5<br>16 --5<br>IRL<br>14 --15<br>12 --25<br>1950 1990 2030 2070 2110 2150 2190 2230 2270<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 7. Broadband Frequency Response** **AFT27S006NT1** RF Device Data NXP Semiconductors 6 **Table 8. Load Pull Performance — Maximum Power Tuning** VDD = 28 Vdc, IDQ = 67 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Output Power**|**Max Output Power**|**Max Output Power**||| |---|---|---|---|---|---|---|---|---| ||||||**P1dB**|||| ||||**Zload (1)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2110|1.63 + j1.52|0.727 -- j1.20|8.26 + j8.38|22.0|39.4|9|60.6|--12| |2140|1.08 + j1.13|0.795 -- j1.16|9.17 + j8.20|21.9|39.4|9|59.9|--15| |2170|1.12 + j0.824|0.833 -- j1.23|8.84 + j7.80|21.8|39.6|9|60.7|--15| |||||||||| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Output Power**||||| ||||||**P3dB**|||| ||||**Zload (2)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2110|1.63 + j1.52|0.648 -- j1.04|10.1 + j7.90|19.7|40.2|11|60.6|--17| |2140|1.08 + j1.13|0.73 -- j0.977|10.4 + j7.71|19.6|40.2|11|59.7|--22| |2170|1.12 + j0.824|0.815 -- j0.997|10.4 + j7.39|19.6|40.3|11|60.5|--21| (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. **Table 9. Load Pull Performance — Maximum Drain Efficiency Tuning** VDD = 28 Vdc, IDQ = 67 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle |VDD= 28 Vd|c, IDQ= 67 mA**,**Pu|lsed CW, 10sec(o|n), 10% Duty Cycle|||||| |---|---|---|---|---|---|---|---|---| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Drain Efficiency**||||| ||||||**P1dB**|||| ||||**Zload (1)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2110|1.63 + j1.52|0.602 -- j1.19|4.69 + j12.4|24.1|37.5|6|69.4|--19| |2140|1.08 + j1.13|0.677 -- j1.15|5.12 + j11.9|24.0|37.9|6|68.4|--23| |2170|1.12 + j0.824|0.708 -- j1.17|4.92 + j11.7|24.0|37.8|6|69.4|--24| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Drain Efficiency**|**Max Drain Efficiency**|**Max Drain Efficiency**||| |---|---|---|---|---|---|---|---|---| ||||||**P3dB**|||| ||||**Zload (2)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2110|1.63 + j1.52|0.562 -- j1.04|5.40 + j12.0|21.8|38.6|7|69.8|--26| |2140|1.08 + j1.13|0.635 -- j0.985|5.45 + j11.6|21.8|38.7|7|68.1|--32| |2170|1.12 + j0.824|0.716 -- j0.996|5.75 + j11.3|21.6|38.9|8|68.6|--30| (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. **==> picture [255 x 60] intentionally omitted <==** **----- Start of picture text -----**<br> Input Load Pull Device Output Load Pull<br>Tuner and Test Under Tuner and Test<br>Circuit Test Circuit<br>Zsource Zin Zload<br>**----- End of picture text -----**<br> **AFT27S006NT1** RF Device Data NXP Semiconductors 7 ## **P1dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz** **==> picture [233 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>38 38.5<br>12 E<br>39<br>10<br>8 P<br>37.5<br>6<br>37<br>36<br>4<br>35.5 36.5<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 8. P1dB Load Pull Output Power Contours (dBm)** **==> picture [233 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>62<br>66 64<br>12 E<br>68 60 58<br>10<br>56<br>8 P<br>54 52<br>6<br>4<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 9. P1dB Load Pull Efficiency Contours (%)** **==> picture [233 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>25<br>14<br>24.5 24<br>12 E<br>23.5 23 22.5<br>10<br>22<br>8 P<br>21 21.5<br>6<br>4<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 10. P1dB Load Pull Gain Contours (dB)** **==> picture [233 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>--30 --14<br>12 E<br>--26 --22 --18 --16<br>10<br>--28 --24<br>8 P<br>--20<br>6<br>4<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 11. P1dB Load Pull AM/PM Contours (** **)** **NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power **AFT27S006NT1** RF Device Data NXP Semiconductors 8 ## **P3dB -- TYPICAL LOAD PULL CONTOURS — 2140 MHz** **==> picture [499 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16 16<br>14 14<br>12 12<br>E 68 E 66 62 60<br>10 10<br>64<br>38 58<br>8 8<br>P P<br>37.5 39 40 56 54<br>6 6<br>37 38.5 39.5 52<br>4 4<br>36<br>36.5<br>2 2<br>2 4 6 8 10 12 14 2 4 6 8 10 12 14<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 12. P3dB Load Pull Output Power Contours (dBm)** **Figure 13. P3dB Load Pull Efficiency Contours (%)** **==> picture [499 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16 16<br>22 21.5<br>14 14<br>22.5 --34 --30 --22<br>12 12<br>E 21 20.5 20 --36 E --28 --26 --24<br>10 10<br>--32<br>19.5 --38<br>8 8<br>P P<br>19<br>6 6<br>18.5<br>4 4<br>2 2<br>2 4 6 8 10 12 14 2 4 6 8 10 12 14<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 14. P3dB Load Pull Gain Contours (dB)** **Figure 15. P3dB Load Pull AM/PM Contours (** **)** **NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power **AFT27S006NT1** RF Device Data NXP Semiconductors 9 **==> picture [75 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> 2500--2700 MHz<br>**----- End of picture text -----**<br> **==> picture [463 x 289] intentionally omitted <==** **----- Start of picture text -----**<br> VGG VDD<br>C14<br>C9<br>C3 C4 C5<br>C7 C8<br>C1 R1<br>C13<br>Q1 C15<br>C2<br>C10 C11<br>C6 AFT27S006N<br>C12 Rev. 2<br>D53818 2300MHz/2500MHz<br>VDD<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>**----- End of picture text -----**<br> **Figure 16. AFT27S006NT1 Test Circuit Component Layout — 2500--2700 MHz** **Table 10. AFT27S006NT1 Test Circuit Component Designations and Values — 2500--2700 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1|8.2 pF Chip Capacitor|GQM2195C2E8R2CB12D|Murata| |C2|7.5 pF Chip Capacitor|GQM2195C2E7R5CB12D|Murata| |C3|8.2 pF Chip Capacitor|ATC100B8R2BT500XT|ATC| |C4, C7, C8, C9, C10, C11, C12|10F, Chip Capacitors|GRM32E61H106KA12L|Murata| |C5, C6|7.5 pF Chip Capacitors|ATC100B7R5BT500XT|ATC| |C13|1.0 pF Chip Capacitor|ATC100B1R0BT500XT|ATC| |C14|220F, 50 V Electrolytic Capacitor|227CKS050M|Illinois Capacitor| |C15|0.7 pF Chip Capacitor|ATC100B0R7BT500XT|ATC| |Q1|RF Power LDMOS Transistor|AFT27S006N|NXP| |R1|4.75, 1/4 W Chip Resistor|CRCW12064R75FNEA|Vishay| |PCB|Rogers RO4350B, 0.020,r= 3.66|D53818|MTL| **AFT27S006NT1** RF Device Data NXP Semiconductors 10 ## **TYPICAL CHARACTERISTICS — 2500--2700 MHz** **==> picture [342 x 619] intentionally omitted <==** **----- Start of picture text -----**<br> 25 24<br>24 22<br>D<br>23 20<br>Gps<br>22 18<br>21 VIDQDD = 70 mA, Single--Carrier W--CDMA = 28 Vdc, Pout = 28.8 dBm (Avg.) 16<br>20 3.84 MHz Channel Bandwidth --39 0 0<br>Input Signal PAR = 9.9 dB @ 0.01%<br>19 PARC Probability on CCDF --40 --4 --0.4<br>18 --41 --8 --0.8<br>ACPR<br>17 --42 --12 --1.2<br>16 IRL --43 --16 --1.6<br>15 --44 --20 --2<br>2480 2510 2540 2570 2600 2630 2660 2690 2720<br>f, FREQUENCY (MHz)<br>Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression<br>(PARC) Broadband Performance @ Pout = 28.8 dBm Avg.out = 28.8 dBm Avg. = 28.8 dBm Avg.<br>26 60 --10<br>VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA<br>3.84 MHz Channel Bandwidth, Input Signal<br>24 PAR = 9.9 dB @ 0.01% Probability on CCDF 50 --20<br>Gps<br>22 40 --30<br>2600 MHz<br>2700 MHz<br>20 2700 MHz 30 --40<br>ACPR<br>2500 MHz<br>18 2600 MHz 20 --50<br>2700 MHz<br>16 10 --60<br> D<br>14 0 --70<br>0.3 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 18. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>24 5<br>Gain<br>22 0<br>20 --5<br>18 --10<br>16 --15<br>IRL<br>VDD = 28 Vdc<br>14 P in = 0 dBm --20<br>IDQ = 70 mA<br>12 --25<br>2480 2520 2560 2600 2640 2680 2720 2760 2800<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 17. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28.8 dBm Avg.out = 28.8 dBm Avg. = 28.8 dBm Avg.** **Figure 19. Broadband Frequency Response** **AFT27S006NT1** RF Device Data NXP Semiconductors 11 ## **2300--2400 MHz** **==> picture [458 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> VGG VDD<br>C14<br>C9<br>C3 C4<br>C7 C8<br>C5<br>C1 R1<br>C13<br>Q1 C17<br>C15 C16<br>C2<br>C6<br>C10 C11<br>AFT27S006N<br>C12 Rev. 2<br>D53818 2300MHz/2500MHz<br>VDD<br>**----- End of picture text -----**<br> NOTE: All data measured in fixture with device soldered to heatsink. **Figure 20. AFT27S006NT1 Test Circuit Component Layout — 2300--2400 MHz** **Table 11. AFT27S006NT1 Test Circuit Component Designations and Values — 2300--2400 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C1|8.2 pF Chip Capacitor|GQM2195C2E8R2CB12D|Murata| |C2|7.5 pF Chip Capacitor|GQM2195C2E7R5CB12D|Murata| |C3|8.2 pF Chip Capacitor|ATC100B8R2BT500XT|ATC| |C4, C7, C8, C9, C10, C11,<br>C12|10F Chip Capacitors|GRM32E61H106KA12L|Murata| |C5, C6|7.5 pF Chip Capacitors|ATC100B7R5BT500XT|ATC| |C13|1.0 pF Chip Capacitor|ATC100B1R0BT500XT|ATC| |C14|220F, 50 V Electrolytic Capacitor|227CKS050M|Illinois Capacitor| |C15|0.8 pF Chip Capacitor|ATC100B0R8CT500XT|ATC| |C16|1.5 pF Chip Capacitor|ATC100B1R5CT500XT|ATC| |C17|1.2 pF Chip Capacitor|ATC100B1R2CT500XT|ATC| |Q1|RF Power LDMOS Transistor|AFT27S006N|NXP| |R1|4.75, 1/4 W Chip Resistor|CRCW12064R75FNEA|Vishay| |PCB|Rogers RO4350B, 0.020,r= 3.66|D53818|MTL| **AFT27S006NT1** RF Device Data NXP Semiconductors 12 ## **TYPICAL CHARACTERISTICS — 2300--2400 MHz** **==> picture [354 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 24 24<br>23.8 VDD = 28 Vdc, Pout = 28.8 dBm (Avg.) 23<br>IDQ = 70 mA, Single--Carrier W--CDMA D<br>23.6 22<br>23.4 21<br>23.223 Gps 3.84 MHz Channel BandwidthInput Signal PAR = 9.9 dB @ 0.01% 20--40 --9 0<br>Probability on CCDF<br>22.8 --40.2 --13 --0.2<br>IRL<br>22.6 PARC --40.4 --17 --0.4<br>22.4 ACPR --40.6 --21 --0.6<br>22.2 --40.8 --25 --0.8<br>22 --41 --29 --1<br>2290 2305 2320 2335 2350 2365 2380 2395 2410<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br> **Figure 21. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28.8 dBm Avg.** **==> picture [298 x 398] intentionally omitted <==** **----- Start of picture text -----**<br> 25 60 --10<br>VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier<br>W--CDMA, 3.84 MHz Channel Bandwidth<br>24 50 --20<br>2400 MHz<br>23 Gps 2350 MHz 40 --30<br>2300 MHz 2400 MHz<br>22 30 --40<br>ACPR 2300 MHz<br>2350 MHz<br>21 2400 MHz 20 --50<br>D<br>20 10 --60<br>Input Signal = 9.9 dB @ 0.01%<br>Probability on CCDF<br>19 0 --70<br>0.3 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 22. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>30 5<br>25 Gain 0<br>20 --5<br>15 --10<br>10 --15<br>IRL<br>VDD = 28 Vdc<br>5 Pin = 0 dBm --20<br>IDQ = 70 mA<br>0 --25<br>2050 2150 2250 2350 2450 2550 2650<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 23. Broadband Frequency Response** **AFT27S006NT1** RF Device Data NXP Semiconductors 13 **Table 12. Load Pull Performance — Maximum Power Tuning** VDD = 28 Vdc, IDQ = 67 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle |VDD= 28 Vd|c, IDQ= 67 mA**,**Pu|lsed CW, 10sec(o|n), 10% Duty Cycle|||||| |---|---|---|---|---|---|---|---|---| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Output Power**||||| ||||||**P1dB**|||| ||||**Zload (1)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2300|1.12 + j0.579|0.964 - j0.336|8.27 + j7.08|21.4|39.1|8|56.9|--14| |2400|1.06 -- j0.483|0.915 + j0.365|8.19 + j6.26|20.7|39.3|8|56.2|--15| |2500|1.01 -- j0.337|1.00 + j0.405|6.75 + j5.85|20.8|39.0|8|56.5|--14| |2600|0.983 -- j1.95|0.793 + j2.06|7.30 + j5.57|20.0|39.5|9|57.6|--16| |2690|1.47 -- j1.30|1.32 + j1.75|6.16 + j5.48|20.1|39.1|8|58.9|--11| |||||||||| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Output Power**||||| ||||||**P3dB**|||| ||||**Zload (2)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2300|1.12 + j0.579|0.908 - j0.0973|10.0 + j6.49|19.0|39.9|10|56.0|--20| |2400|1.06 -- j0.483|0.831 + j0.588|9.48 + j5.93|18.5|40.0|10|55.6|--22| |2500|1.01 -- j0.337|1.05 + j0.711|8.55 + j5.79|18.6|39.9|10|57.3|--21| |2600|0.983 -- j1.95|0.633 + j2.21|8.30 + j5.44|17.9|40.2|10|57.5|--23| |2690|1.47 -- j1.30|1.40 + j2.16|7.60 + j5.25|17.8|40.0|10|58.8|--17| (1) Load impedance for optimum P1dB power. (2) Load impedance for optimum P3dB power. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. **Table 13. Load Pull Performance — Maximum Drain Efficiency Tuning** VDD = 28 Vdc, IDQ = 67 mA **,** Pulsed CW, 10 sec(on), 10% Duty Cycle |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Drain Efficiency**|**Max Drain Efficiency**|**Max Drain Efficiency**||| |---|---|---|---|---|---|---|---|---| ||||||**P1dB**|||| ||||**Zload (1)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2300|1.12 + j0.579|0.833 -- j0.40|5.09 + j10.3|23.4|37.6|6|63.8|--20| |2400|1.06 -- j0.483|0.805 + j0.29|5.09 + j9.23|22.5|38.0|6|62.8|--22| |2500|1.01 -- j0.337|0.835 + j0.341|4.51 + j8.31|22.6|37.9|6|63.1|--19| |2600|0.983 -- j1.95|0.755 + j1.96|4.88 + j7.74|21.3|38.7|7|63.3|--21| |2690|1.47 -- j1.30|1.08 + j1.64|4.12 + j7.31|21.7|38.2|7|64.6|--17| |||||||||| |**f**<br>**(MHz)**|**Zsource**<br>**(****)**|**Zin**<br>**(****)**||**Max Drain Efficiency**||||| ||||||**P3dB**|||| ||||**Zload (2)**<br>**(****)**|**Gain (dB)**|**(dBm)**|**(W)**|**D**<br>**(%)**|**AM/PM**<br>**(****)**| |2300|1.12 + j0.579|0.807 -- j0.161|5.41 + j10.0|21.1|38.5|7|63.2|--29| |2400|1.06 -- j0.483|0.77 + j0.525|6.38 + j9.17|20.2|39.1|8|61.6|--26| |2500|1.01 -- j0.337|0.921 + j0.637|5.16 + j8.53|20.5|38.8|8|63.4|--27| |2600|0.983 -- j1.95|0.608 + j2.13|5.61 + j7.84|19.3|39.4|9|62.7|--28| |2690|1.47 -- j1.30|1.18 + j2.01|4.38 + j7.31|19.6|38.8|8|64.8|--25| - (1) Load impedance for optimum P1dB efficiency. (2) Load impedance for optimum P3dB efficiency. Zsource = Measured impedance presented to the input of the device at the package reference plane. Zin = Impedance as measured from gate contact to ground. Zload = Measured impedance presented to the output of the device at the package reference plane. **==> picture [255 x 61] intentionally omitted <==** **----- Start of picture text -----**<br> Input Load Pull Device Output Load Pull<br>Tuner and Test Under Tuner and Test<br>Circuit Test Circuit<br>Zsource Zin Zload<br>**----- End of picture text -----**<br> **AFT27S006NT1** RF Device Data NXP Semiconductors 14 ## **P1dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz** **==> picture [233 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>35.5 36 36.5<br>14<br>35<br>37<br>12<br>37.5 38<br>10<br>38.5<br>8 E<br>6 P<br>4<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 24. P1dB Load Pull Output Power Contours (dBm)** **==> picture [233 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>62 60 56 52<br>8 E<br>58 54 50<br>6 P<br>48<br>4<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 25. P1dB Load Pull Efficiency Contours (%)** **==> picture [499 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16 16<br>--8<br>14 14<br>--10<br>--12<br>12 12<br>23.5 23 22.5 22 --14<br>10 10<br>--18<br>21.5 21 --22 --16<br>8 E 8 E<br>20.5 --24<br>--20<br>6 P 6 P<br>20<br>4 4<br>19.5<br>2 2<br>2 4 6 8 10 12 14 2 4 6 8 10 12 14<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 26. P1dB Load Pull Gain Contours (dB)** **Figure 27. P1dB Load Pull AM/PM Contours (** **)** **NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power **AFT27S006NT1** RF Device Data NXP Semiconductors 15 ## **P3dB -- TYPICAL LOAD PULL CONTOURS — 2500 MHz** **==> picture [233 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>36.5 37 37.5<br>14<br>36<br>38 38.5<br>12<br>39<br>10<br>39.5<br>E<br>8<br>6 P<br>4<br>47<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 28. P3dB Load Pull Output Power Contours (dBm)** **==> picture [233 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 16<br>14<br>12<br>10<br>62 60<br>E<br>8<br>58 56 54 52<br>6 P<br>50<br>4<br>48<br>2<br>2 4 6 8 10 12 14<br>REAL ()<br>)<br>IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 29. P3dB Load Pull Efficiency Contours (%)** **==> picture [499 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 16 16<br>--14<br>14 14<br>--16<br>--18<br>12 12<br>21.5 21 20.5 20 --20<br>10 10<br>--30<br>19.5 19 --22<br>E E<br>8 8<br>18.5 --26<br>--28<br>6 P 6 P<br>18 --24<br>4 4<br>17.5<br>2 2<br>2 4 6 8 10 12 14 2 4 6 8 10 12 14<br>REAL () REAL ()<br>) )<br>IMAGINARY ( IMAGINARY (<br>**----- End of picture text -----**<br> **Figure 30. P3dB Load Pull Gain Contours (dB)** **Figure 31. P3dB Load Pull AM/PM Contours (** **)** **NOTE:** P = Maximum Output Power E = Maximum Drain Efficiency Gain Drain Efficiency Linearity Output Power **AFT27S006NT1** RF Device Data NXP Semiconductors 16 ## **TYPICAL CHARACTERISTICS —3400--3600 MHz** **==> picture [342 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 20 20<br>VDD = 28 Vdc, Pout = 28.8 dBm (Avg.)<br>19.5 I DQ = 70 mA, Single--Carrier W--CDMA 18<br>19 16<br>3.84 MHz Channel Bandwidth<br>18.5 Input Signal PAR = 9.9 dB @ 0.01% 14<br>D Probability on CCDF<br>18 12<br>Gps<br>17.5 --42 --3 --0.6<br>17 --43 --6 --0.8<br>PARC<br>16.5 --44 --9 --1<br>16 --45 --12 --1.2<br>IRL<br>15.5 --46 --15 --1.4<br>ACPR<br>15 --47 --18 --1.6<br>3380 3410 3440 3470 3500 3530 3560 3590 3620<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br> **Figure 32. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28.8 dBm Avg.** **==> picture [290 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 20 60 --10<br>VDD = 28 Vdc, IDQ = 70 mA, Single--Carrier W--CDMA ACPR<br>3.84 MHz Channel Bandwidth<br>18 50 --20<br>3500 MHz 3400 MHz Gps<br>16 D 40 --30<br>3600 MHz<br>14 30 --40<br>3600 MHz<br>3500 MHz<br>3600 MHz<br>12 20 --50<br>3400 MHz 3500 MHz<br>3400 MHz<br>10 10 --60<br>Input Signal PAR = 9.9 dB @ 0.01%<br>Probability on CCDF<br>8 0 --70<br>0.1 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>**----- End of picture text -----**<br> **Figure 33. Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power** **==> picture [254 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 24 10<br>VDD = 28 Vdc<br>21 P in = 0 dBm 5<br>IDQ = 70 mA<br>Gain<br>18 0<br>15 --5<br>12 --10<br>9 --15<br>IRL<br>6 --20<br>3100 3200 3300 3400 3500 3600 3700 3800 3900<br>f, FREQUENCY (MHz)<br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 34. Broadband Frequency Response** **AFT27S006NT1** RF Device Data NXP Semiconductors 17 ## **728--768 MHz** **==> picture [465 x 299] intentionally omitted <==** **----- Start of picture text -----**<br> VGG VDD<br>C15<br>C14<br>C11<br>C10<br>C6 C5<br>R1 C7*<br>C1* C8 C9*<br>C2 C3 C4<br>Q1<br>C12<br>AFT27S006N<br>C13 Rev. 1<br>800MHz<br>D51698<br>C16<br>C17<br>VDD<br>*C1, C7 and C9 are mounted vertically.<br>NOTE: All data measured in fixture with device soldered to heatsink.<br>**----- End of picture text -----**<br> **Figure 35. AFT27S006NT1 Test Circuit Component Layout — 728--768 MHz** **Table 14. AFT27S006NT1 Test Circuit Component Designations and Values — 728--768 MHz** |**Part**|**Description**|**Part Number**|**Manufacturer**| |---|---|---|---| |C5, C10, C11, C12, C13|33 pF Chip Capacitors|ATC100B330JT500XT|ATC| |C2|4.7 pF Chip Capacitor|ATC100B4R7JT500XT|ATC| |C3|6.8 pF Chip Capacitor|ATC100B6R8JT500XT|ATC| |C4, C7|3.9 pF Chip Capacitors|ATC100B3R9JT500XT|ATC| |C1, C9|82 pF Chip Capacitors|ATC100B820JT500XT|ATC| |C8|0.5 pF Chip Capacitor|ATC100B0R5JT500XT|ATC| |C6, C14, C15, C16, C17|10F Chip Capacitors|GRM32ER61H106KA12L|Murata| |Q1|RF Power LDMOS Transistor|AFT27S006N|NXP| |R1|10, 1/4 W Chip Resistor|CRCW120610R0JNEA|Vishay| |PCB|Rogers RO4350B, 0.020,r= 3.66|D51698|MTL| **AFT27S006NT1** RF Device Data NXP Semiconductors 18 ## **TYPICAL CHARACTERISTICS — 728--768 MHz** **==> picture [350 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 25 22<br>24.8 V I DQDD = 65 mA, Single--Carrier W--CDMA = 28 Vdc, Pout = 28.8 dBm (Avg.) 21<br>24.6 20<br>D<br>24.4 19<br>24.2 Gps 18<br>3.84 MHz Channel Bandwidth<br>24 Input Signal PAR = 9.9 dB @ 0.01% --43 --9 0.1<br>Probability on CCDF<br>23.8 --44 --11 0.06<br>PARC<br>23.6 --45 --13 0.02<br>23.4 ACPR --46 --15 --0.02<br>23.2 --47 --17 --0.06<br>IRL<br>23 --48 --19 --0.1<br>710 720 730 740 750 760 770 780 790<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>ACPR (dBc) PARC (dB)<br>IRL, INPUT RETURN LOSS (dB)<br>**----- End of picture text -----**<br> **Figure 36. Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance @ Pout = 28.8 dBm Avg.** **==> picture [298 x 397] intentionally omitted <==** **----- Start of picture text -----**<br> 28 60 0<br>VDD = 28 Vdc, IDQ = 65 mA, Single--Carrier D<br>W--CDMA, 3.84 MHz Channel Bandwidth, Input<br>26 Signal PAR = 9.9 dB @ 0.01% 50 --10<br>Probability on CCDF Gps ACPR<br>24 40 --20<br>768 MHz<br>22 30 --30<br>748 MHz<br>728 MHz 728 MHz<br>20 748 MHz 20 --40<br>768 MHz<br>728 MHz<br>18 10 --50<br>748 MHz<br>768 MHz<br>16 0 --60<br>0.4 1 10<br>Pout, OUTPUT POWER (WATTS) AVG.<br>Figure 37. Single--Carrier W--CDMA Power Gain, Drain<br>Efficiency and ACPR versus Output Power<br>27 5<br>VDD = 28 Vdc<br>25 Pin = 0 dBm Gain 0<br>IDQ = 70 mA<br>23 --5<br>21 --10<br>19 --15<br>IRL<br>17 --20<br>15 --25<br>600 650 700 750 800 850 900 950 1000<br>f, FREQUENCY (MHz)<br>, POWER GAIN (dB) ACPR (dBc)<br>ps<br>G , DRAIN EFFICIENCY (%)<br>D<br><br>GAIN (dB) IRL (dB)<br>**----- End of picture text -----**<br> **Figure 38. Broadband Frequency Response** **AFT27S006NT1** RF Device Data NXP Semiconductors 19 **==> picture [114 x 17] intentionally omitted <==** **----- Start of picture text -----**<br> Solder pad with thermal via<br>structure. All dimensions in mm.<br>**----- End of picture text -----**<br> **==> picture [255 x 251] intentionally omitted <==** **----- Start of picture text -----**<br> 0.28<br>7.11<br>0.165<br>4.91<br>0.089 0.155<br>2.26 3.94<br>0.085<br>2.16<br>**----- End of picture text -----**<br> **Figure 39. PCB Pad Layout for PLD--1.5W** **==> picture [92 x 84] intentionally omitted <==** **----- Start of picture text -----**<br> AS06<br>N( )B<br>YYWW<br>**----- End of picture text -----**<br> **Figure 40. Product Marking** **AFT27S006NT1** RF Device Data NXP Semiconductors 20 ## **PACKAGE DIMENSIONS** **AFT27S006NT1** RF Device Data NXP Semiconductors 21 **AFT27S006NT1** RF Device Data NXP Semiconductors 22 **==> picture [502 x 233] intentionally omitted <==** **AFT27S006NT1** RF Device Data NXP Semiconductors 23 ## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** Refer to the following resources to aid your design process. ## **Application Notes** - AN1955: Thermal Measurement Methodology of RF Power Amplifiers ## **Software** - Electromigration MTTF Calculator - RF High Power Model - .s2p File ## **Development Tools** - Printed Circuit Boards ## **To Download Resources Specific to a Given Part Number:** 1. Go to http://www.nxp.com/RF 2. Search by part number 3. Click part number link 4. Choose the desired resource from the drop down menu ## **REVISION HISTORY** The following table summarizes revisions to this document. |**Revision**|**Date**|**Description**| |---|---|---| |0|Oct. 2013|Initial Release of Data Sheet| |1|Nov. 2013|Table 5, Functional Tests table: gain min and max limits improved and typical values updated to reflect<br>large volume production data, p. 3<br>Tables 6, 7, 8, 9, Test Circuit Component Designations and Values: updated PCB description to reflect<br>most current board specifications from Rogers, pp. 4, 10, 12, 17| |2|Sept. 2014|Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect<br>actual reel size, p. 1<br>Changed operating frequency from 728–2700 MHz to 728–3600 MHz due to expanded device frequency<br>capability resulting from additional test data, p. 1| |3|Nov. 2014|Added 3400--3600 MHz performance information as follows:<br>-- Typical Frequency Band table, p. 1<br>-- Fig. 32, Single--Carrier Output Peak--to--Average Ratio Compression (PARC) Broadband Performance<br>@ Pout= 28.8 dBm Avg., p. 17<br>-- Fig. 33, Single--Carrier W--CDMA Power Gain, Drain Efficiency and ACPR versus Output Power, p. 17<br>-- Fig. 34, Broadband Frequency Response, p. 17| |4|Dec. 2015|Table 1, Maximum Ratings: corrected operating junction temperature range upper limit, p. 2<br>Table 5, Electrical Characteristics, On Characteristics VDS(on): updated IDunit of measure to mAdc to<br>reflect actual unit of measure, p. 2<br>Added Ordering Information Table 6, p. 3| |5|Dec. 2017|Changed operating frequency from 728–3600 MHz to 728–3700 MHz due to expanded device frequency<br>capability resulting from additional test data, p. 1| **AFT27S006NT1** RF Device Data NXP Semiconductors 24 ## _**How to Reach Us:**_ **Home Page:** nxp.com **Web Support:** nxp.com/support Information in this document is provided solely to enable system and software implementers to use NXP products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. NXP reserves the right to make changes without further notice to any products herein. NXP makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does NXP assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in NXP data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. NXP does not convey any license under its patent rights nor the rights of others. NXP sells products pursuant to standard terms and conditions of sale, which can be found at the following address: nxp.com/SalesTermsandConditions. NXP, the NXP logo, Freescale, the Freescale logo and Airfast are trademarks of NXP B.V. All other product or service names are the property of their respective owners. E 2013–2015, 2017 NXP B.V. **AFT27S006NT1** RF Device DataDocument Number: AFT27S006N NXP SemiconductorsRev. 5, 12/2017 25
Updated at April 10, 2026
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