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AFT09MS031NR1
RF FET Transistor, 40 VDC, 31 W, 136 MHz, 520 MHz, TO-270
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:40V; Continuous Drain Current Id:-; Power Dissipation Pd:317W; Operating Frequency Min:764MHz; Operating Frequency Max:941MHz; RF Transistor Case:TO-270; No. o
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: AFT09MS031N
- Power Dissipation: 317W
- Transistor Mounting: Flange
- Transistor Case Style: TO-270
- Operating Frequency Max: 941MHz
- Operating Frequency Min: 764MHz
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 9.61 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor**
Document Number: AFT09MS031N Rev. 1, 8/2012
Technical Data
## **RF Power LDMOS Transistors**
## High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 764 to 941 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
## **Narrowband Performance** (13.6 Vdc, IDQ = 500 mA, TA = 25°C, CW)
## **AFT09MS031NR1 AFT09MS031GNR1**
**764--941 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS**
|**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**P1dB**<br>**(W)**|
|---|---|---|---|
|764|18.0|74.1|32|
|870|17.2|71.0|31|
|941|15.7|68.1|31|
**800 MHz Broadband Performance** (13.6 Vdc, IDQ = 100 mA, TA = 25°C, CW)
|**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|η**D**<br>**(%)**|**P1dB**<br>**(W)**|
|---|---|---|---|
|760|15.7|62.0|44|
|820|15.7|63.0|37|
|870|15.5|61.0|36|
**Load Mismatch/Ruggedness**
**Frequency Signal Pin Test (MHz) Type VSWR (W) Voltage Result** 870 **[(1)]** CW >65:1 at all 1.2 17 No Device Phase Angles (3 dB Overdrive) Degradation 870 **[(2)]** 2.0 (3 dB Overdrive) ~~a —~~ 1. Measured in 870 MHz narrowband test circuit. 2. Measured in 760--870 MHz broadband reference circuit.
## **Features**
- Characterized for Operation from 764 to 941 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband — Full Power Across the Band (764–870 MHz)
- 225°C Capable Plastic Package
**TO--270--2 PLASTIC AFT09MS031NR1**
**TO--270--2 GULL PLASTIC**
**AFT09MS031GNR1**
**==> picture [117 x 71] intentionally omitted <==**
**----- Start of picture text -----**<br>
Gate Drain<br>|__|<br>(Top View)<br>**----- End of picture text -----**<br>
Note: The backside of the package is the source terminal for the transistor.
**Figure 1. Pin Connections**
- Exceptional Thermal Performance
- High Linearity for: TETRA, SSB, LTE
- Cost--effective Over--molded Plastic Packaging
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
## **Typical Applications**
- Output Stage 800 MHz Trunking Band Mobile Radio
- Output Stage 900 MHz Trunking Band Mobile Radio
**AFT09MS031NR1 AFT09MS031GNR1** ~~pdfreescale~~
© Freescale Semiconductor, Inc., 2012. All rights reserved.
RF Device Data Freescale Semiconductor, Inc.
1
**Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**|||**Symbol**<br>**Value**||**Unit**|
|Drain--Source Voltage|||VDSS<br>--0.5, +40||Vdc|
|Gate--Source Voltage|||VGS<br>--6.0, +12||Vdc|
|Operating Voltage|||VDD<br>17, +0||Vdc|
|Storage Temperature Range|||Tstg<br>--65 to +150||°C|
|Case Operating Temperature Range|||TC<br>--40 to +150||°C|
|Operating Junction Temperature Range **(1,2)**|||TJ<br>--40 to +225||°C|
|Total Device Dissipation @ TC= 25°C|||PD<br>317||W|
|Derate above 25°C|||1.59||W/°C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ= 500 mA, 870 MHz<br>RθJC<br>0.63<br>°C/W<br>~~ee~~||||||
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>A, passes 100 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 1200 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>°C<br>~~a~~||||||
|**Table 5. Electrical Characteristics** (TA= 25°C unless otherwise noted)||||||
|**Characteristic**||**Symbol**|**Min**<br>**Typ**<br>**Max**||**Unit**|
|**Off Characteristics**<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 40 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>μAdc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 13.6 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>μAdc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>600<br>nAdc<br>~~ee~~||||||
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 115μAdc)<br>VGS(th)<br>1.6<br>2.1<br>2.6<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1.2 Adc)<br>VDS(on)<br>—<br>0.1<br>—<br>Vdc<br>Forward Transconductance<br>(VGS= 10 Vdc, ID= 10 Adc)<br>gfs<br>—<br>7.8<br>—<br>S<br>~~Oo~~||||||
|1. Continuous use at maximum temperature will affect MTTF.||||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF||||||
|calculators by product.||||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted) **(continued)**
|**Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)**(continued)**|**Table 5. Electrical Characteristics** (TA = 25°C unless otherwise noted)A = 25°C unless otherwise noted)= 25°C unless otherwise noted)°C unless otherwise noted)C unless otherwise noted)**(continued)**|**(continued)**|
|---|---|---|
|**Characteristic**<br>**Symbol**||**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**Dynamic Characteristics**|||
|Reverse Transfer Capacitance<br>Crss||—<br>2.1<br>—<br>pF|
|(VDS= 13.6 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||
|Output Capacitance<br>Coss||—<br>63<br>—<br>pF|
|(VDS= 13.6 Vdc±30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||
|Input Capacitance<br>Ciss||—<br>140<br>—<br>pF|
|(VDS= 13.6 Vdc, VGS= 0 Vdc±30 mV(rms)ac @ 1 MHz)|||
|**Functional Tests (1)** (In Freescale Narrowband Test Fixture, 50 ohm system) VDD= 13.6 Vdc, I||= 13.6 Vdc, IDQ= 500 mA, Pout= 31 W, f = 870 MHz|
|Common--Source Amplifier Power Gain<br>Gps<br>16.0<br>17.2<br>18.5<br>dB<br>Drain Efficiency<br>ηD<br>68.0<br>71.0<br>—<br>%<br>**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system, IDQ= 500 mA)<br>**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>870<br>CW<br>>65:1 at all Phase Angles<br>1.2<br>(3 dB Overdrive)<br>17<br>No Device Degradation<br>1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull<br>wing (GN) parts.<br>~~——~~<br>~~a~~|||
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
3
## **TYPICAL CHARACTERISTICS**
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**----- Start of picture text -----**<br>
300 es 9<br>Ciss 8 TA = 25°C VGS = 4.0 Vdc<br>100<br>7<br>Coss 6<br>————— Measured with ±30 mV(rms)ac @ 1 MHz SS 5 =a Sanne<br>VGS = 0 Vdc<br>4<br>10 T T fi | | | | | ft 3.5 Vdc tt<br>3<br>2 3.25 Vdc<br>oS Crss e e<br>1 2.5 Vdc 3.0 Vdc<br>1 0<br>ee ee ee ee pt<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 2. Capacitance versus Drain--Source Voltage Note: Measured with both sides of the transistor tied together.<br>C, CAPACITANCE (pF) , DRAIN CURRENT (AMPS)<br>IDS<br>**----- End of picture text -----**<br>
**Figure 2. Capacitance versus Drain--Source Voltage**
**Figure 3. Drain Current versus Drain--Source Voltage**
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10 [9]<br>oo eae aaaaee<br>VDD = 13.6 Vdc<br>10 [8] gee<br>ID = 2.6 Amps<br>Se<br>10 [7] 3.2 Amps<br>aS<br>10 [6]<br>HOE SSSSs SEE<br>3.9 Amps<br>10 [5] SERRE re<br>———<br>10 [4] Pp tt | | te te tT tT TT<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (°C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http:/www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 4. MTTF versus Junction Temperature -- CW**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
4
**870 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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**----- Start of picture text -----**<br>
oof} ©<br>C9 [TT]LdL__| C13 Wecoscccssee9,ie}8 ® ® fe}8fe} COOCOCOOCOFERROO}() C16 OQo0000<br>C10 (LI 3ifo) [3] l<br>VGG 3 AFT09MS031N 8 VDD<br>) B1 co C14 Fees ejekezeze} | Rev. 0 feXe) — B2 ©<br>68) © 8| C15 C11<br>lojolelorolelelererlelelelelelelerere) oe)8 fe}}8 fe)°8 OOOOCNDOCOOCOO0000000|_|—|<br>(eo)(eo) O° fe) 1}fe) C12<br>fe} O° fe) O°<br>fe} fe} O000 fe) fe)<br>Corfe} fe}fe} fe}fo) fe}fe} ie)ie} eo}fe} C7<br>A QQ00000 90090000 J, 95<br>00000000000 | __— Ml Se<br>L1 J C3 C5 L2 J 200000605["] [OOOodD000000000000<br>C1 L3 SS=" £ C2 £3z3o<br>C4 C6 —_—EEe<br>00000000000 — TOOOOGOO®<br>1)OS [| FF[| Ofe)<br>ey 8ie} ° C8<br>ole 000000000 LOCE000% .<br>oco” fi treescaleé l e 3> 9<br>fo} CUT OUT AREA COODONDDONONOONONOOCOOO00000N0<br>**----- End of picture text -----**<br>
**Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz**
**Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2<br>RF Beads, Long|RF Beads, Long|2743021447|Fair--Rite|
|C1<br>3.9 pF Chip Capacitor|3.9 pF Chip Capacitor|ATC100B3R9CT500XT|ATC|
|C2, C14, C15<br>56 pF Chip Capacitors|56 pF Chip Capacitors|ATC100B560CT500XT|ATC|
|C3, C4, C5, C6<br>10 pF Chip Capacitors|10 pF Chip Capacitors|ATC100B100JT500XT|ATC|
|C7, C8<br>3.6 pF Chip Capacitors|3.6 pF Chip Capacitors|ATC100B3R6CT500XT|ATC|
|C9<br>2.5|2.5μF Chip Capacitor|GRM31CR71H225KA88L|Murata|
|C10, C11<br>0.1|0.1μF Chip Capacitors|C1206C104K1RAC--TU|Kemet|
|C12<br>10,000 pF Chip Capacitor|10,000 pF Chip Capacitor|ATC200B103KT50XT|ATC|
|C13<br>22|22μF, 25 V Tantalum Capacitor|TPSD226M025R0200|AVX|
|C16<br>330|330μF, 35 V Electrolytic Capacitor|MCGPR35V337M10X16--RH|Multicomp|
|L1<br>8.0 nH Inductor|8.0 nH Inductor|A03TKLC|Coilcraft|
|L2<br>18.5 nH Inductor|18.5 nH Inductor|A05TKLC|Coilcraft|
|L3<br>5.0 nH Inductor|5.0 nH Inductor|A02TKLC|Coilcraft|
|PCB<br>0.030|0.030″,εr= 3.5|RO4350B|Rogers|
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
5
**==> picture [394 x 565] intentionally omitted <==**
**----- Start of picture text -----**<br>
RF<br>OUTPUT<br>DS<br>V<br>Z16<br>+ C16<br>C2<br>C12 Z15<br>C11 L3<br>C8<br>B2 Z14 Microstrip Taper<br>C7 ″<br>Z13<br>C15 0.620<br>L2 Z12 Description Microstrip″ Microstrip″ Microstrip″ Microstrip″ ″ × Microstrip″ Microstrip″ Microstrip″<br> 0.080 0.080 0.520 0.520 0.420 0.420 0.420 0.420<br>Z11<br>C6 ″ × ″ × ″ × ″ × ″ × ″ × ″ × ″ ×<br>0.190 0.040 0.454 0.054 0.620 0.433 0.665 0.200<br>Z10<br>Z9<br>C5<br>Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16<br>Z8<br>C4<br>C3<br>Z7<br> Microstrip Taper<br>L1 Z6 ″ 0.620<br>C14 Z5 Description Microstrip″ Microstrip″ Microstrip″ ″ × Microstrip″ Microstrip″ Microstrip″ Microstrip″<br>Z4<br> 0.080 0.120 0.320 0.155 0.620 0.620 0.620 0.620<br>″ × ″ × ″ × ″ × ″ × ″ × ″ × ″ ×<br>Z3<br>B1<br>Figure 6. AFT09MS031NR1 Narrowband Test Circuit Schematic — 870 MHz 0.280 0.490 0.610 0.320 0.139 0.225 0.121 0.254<br>C1<br>+ C13<br>Z2<br>C10<br>Z1 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8<br>Table 7. AFT09MS031NR1 Narrowband Test Circuit Microstrips — 870 MHz<br>C9<br>RF<br>INPUT<br>GS<br>V<br>**----- End of picture text -----**<br>
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
6
**TYPICAL CHARACTERISTICS — 870 MHz**
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**----- Start of picture text -----**<br>
45<br>40 VDD = 13.6 Vdc, Pin = 0.6 W<br>35 |== VDD = 12.5 Vdc, Pin = 0.6 W Loecam 4 |<br>30<br>VDD = 13.6 Vdc, Pin = 0.3 W<br>25 ny 29 nee<br>20 ee e<br>15 VDD = 12.5 Vdc<br>Pin = 0.3 W<br>10 +4$| |AY47 Ae<br>| fA<br>5<br>f = 870 MHz<br>0 eepoee e<br>| |<br>0 0.5 1 1.5 2 2.5 3 4 4.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>**----- End of picture text -----**<br>
**Figure 7. CW Output Power versus Gate--Source Voltage**
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19 80<br>VDD = 13.6 Vdc, IDQ = 500 mA ηD<br>18.5 f = 870 MHz 70<br>18 C T 60<br>er e<br>17.5 Gps 50<br>17 Er Pc 40<br>CCIE ACCENTAST<br>16.5 Pout 30<br>16 Te 20<br>DP<br>15.5 10<br>CT TNa<br>15 eT 0<br>TTIN<br>0.01 0.1 1 2<br>Pin, INPUT POWER (WATTS)<br>Figure 8. Power Gain, CW Output Power and<br>Drain Efficiency versus Input Power<br>VDD = 13.6 Vdc, IDQ = 500 mA, Pout = 31 W Avg.<br>f Zsource Zload<br>MHz Ω Ω<br>870 0.28 -- j0.71 0.98 -- j0.52<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 Ω 50 Ω<br>Zsource Zload<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out η<br>P<br>**----- End of picture text -----**<br>
**Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
7
## **760--870 MHz BROADBAND REFERENCE CIRCUIT**
|**Table 8. 760--870 MHz Broadband Performance**|**Table 8. 760--870 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|
|VDD= 13.6 Volts, IDQ= 100 mA, TA= 25°C, CW|||||
|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>η**D**<br>**(%)**<br>**P1dB**<br>**(W)**<br>760<br>15.7<br>62.0<br>44<br>820<br>15.7<br>63.0<br>37<br>870<br>15.5<br>61.0<br>36<br>~~—————~~|||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)|||||
|**Frequency**<br>**Signal**|**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**||**Test Voltage, VDD**||**Result**|
|870<br>CW<br>>65:1 at all<br>2.0||17||No Device|
|Phase Angles|Phase Angles<br>(3 dB Overdrive)|||Degradation|
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
8
## **760--870 MHz BROADBAND REFERENCE CIRCUIT**
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**----- Start of picture text -----**<br>
|||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|C19|J1|C14|C15|
|C1|C13|
|°|TH|O|C18|Stats|6|obeeet|te|C16|||Loe|
|O|2|S|eo oe|
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|C17|
|-|5|al|po|90|OOOO|O°|OOO|;|
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|°|imi|5|=|||O|O|
|0|000|00|40|
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|000000|C3|O|||C4|C5|C6|i|C8|OAS|C10|C11|98|
|TO--270--2|(oy||Aee|||eee||tyJ|—|°2|
|ss|
|Rev. 1|0000000005000|0|0|0|9|f|r|
|+)|<a|
|Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz|
|Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHzponent Designations and Values — 760--870 MHzonent Designations and Values — 760--870 MHzgnations and Values — 760--870 MHznations and Values — 760--870 MHz|
|Part|Description|Part Number|Manufacturer|
|C1, C10, C11, C12|5.6 pF Chip Capacitors|ATC600F5R6BT250XT|ATC|
|C2|6.8 pF Chip Capacitor|ATC600F6R8BT250XT|ATC|
|C3|8.2 pF Chip Capacitor|ATC600F8R2BT250XT|ATC|
|C4|12 pF Chip Capacitor|ATC600F120JT250XT|ATC|
|C5|10 pF Chip Capacitor|ATC600F100JT250XT|ATC|
|C6, C7|30 pF Chip Capacitors|ATC600F300JT250XT|ATC|
|C8, C9|22 pF Chip Capacitors|ATC600F220JT250XT|ATC|
|C13, C16, C17|240 pF Chip Capacitors|ATC600F241JT250XT|ATC|
|C14, C19|10 μF Chip Capacitors|GRM31CR61H106KA12L|Murata|
|C15, C18|1 μF Chip Capacitors|GRM21BR71H105KA12L|Murata|
|J1|3 Pin Connector|AMP--9--146305--0|TE Connectivity|
|L1|6.9 nH Inductor|0807SQ6N9|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT09MS031NR1|Freescale|
|R1|62 Ω|Chip Resistor|RG2012N--620--B--T1|Susumu|
|PCB|0.020″, εr = 4.8|S1000--2|Shengyi|
**----- End of picture text -----**<br>
**Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHzponent Designations and Values — 760--870 MHzonent Designations and Values — 760--870 MHzgnations and Values — 760--870 MHznations and Values — 760--870 MHz**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
9
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in<br>=<br>RF<br>OUTPUT<br>Z20<br>C13<br>Z19<br>C12<br>Z18<br>C11<br>Z17<br>C10<br>Z16<br>L1 Z15<br>C16 Z14 Z13 C8<br>C15 Z12 C9<br>C14 Z11<br>DS<br>V Z10<br>C7 C6<br>Z9<br>R1<br>Z8<br>C17 Z7<br>C5<br>C18<br>Z6<br>C4<br>C19<br>Z5<br>Z4 Figure 11. AFT09MS031NR1 Broadband Reference Circuit Schematic — 760--870 MHz<br>GS C3<br>V<br>Z3<br>C2<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
|**Description**|0.390″ ×0.120″Microstrip|0.390″ ×0.080″Microstrip|0.034″ ×0.100″Microstrip|0.390″ ×0.200″Microstrip|0.034″ ×0.110″Microstrip|0.034″ ×0.010″Microstrip|0.034″ ×0.190″Microstrip|0.034″ ×0.110″Microstrip|
|---|---|---|---|---|---|---|---|---|
|**Microstrip**|Z11, Z12|Z13|Z14|Z15|Z16|Z17|Z18*|Z19*|
||||||||||
|**Description**|0.034″ ×0.060″Microstrip|0.034″ ×0.380″Microstrip|0.034″ ×0.215″Microstrip|0.034″ ×0.054″Microstrip|0.266″ ×0.025″Microstrip|0.266″ ×0.080″Microstrip|0.034″ ×0.050″Microstrip|0.266″ ×0.015″Microstrip|
|**Microstrip**|Z1, Z20|Z2*|Z3*|Z4|Z5, Z6|Z7, Z9|Z8|Z10|
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
10
## **TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [283 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
17 66<br>VDD = 13.6 Vdc, Pin = 1 W<br>IDQ = 100 mA<br>16.5 pof T 63<br>ηD<br>16 _ pT TN 60<br>15.5 57<br>Ean ee Gps<br>15 40<br>ef | | fT<br>Pout<br>14.5 ee ee 35<br>14 pt y 30<br>| tT<br>750 770 790 810 830 850 870 890<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 12. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power**
**==> picture [283 x 175] intentionally omitted <==**
**----- Start of picture text -----**<br>
17 66<br>VDD = 12.5 Vdc, Pin = 1 W<br>IDQ = 100 mA<br>16.5 64<br>pp fT<br>ηD<br>16 PAT 62<br>| S A<br>15.5 60<br>7| ; |<br>Gps<br>15 a 37<br>Pout<br>14.5 ee eeee 32<br>14 pt y 27<br>| te<br>750 770 790 810 830 850 870 890<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br>η<br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 13. Power Gain, CW Output Power and Drain Efficiency versus Frequency at a Constant Input Power**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
11
## **TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND REFERENCE CIRCUIT**
**==> picture [496 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
60 5<br>VDD = 13.6 Vdc, Pin = 1 W VDD = 13.6 Vdc<br>50 P| VDD = 12.5 Vdc, Pin = 1 W 4 Pin = 1 W VPDDin = 1 W = 12.5 Vdc {|<br>40<br>ees VDD = 13.6 Vdc, Pin = 0.5 W See, 3 VDD = 13.6 Vdc /—<br>30 SS VDD = 12.5 Vdc Pin = 0.5 W |<br>Pin = 0.5 W<br>2 VDD = 12.5 Vdc<br>20 p pp [Jf Pin = 0.5 W<br>—SfSf f = 820 MHz 1 Any,<br>10<br>ZZ Detail A S f = 820 MHz<br>0 SLA 0 e A<br>0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>**----- End of picture text -----**<br>
**Detail A**
**Figure 14. CW Output Power versus Gate--Source Voltage**
**==> picture [296 x 177] intentionally omitted <==**
**----- Start of picture text -----**<br>
18 120 70<br>VDD = 13.6 Vdc 820 MHz<br>IDQ = 100 mA 870 MHz<br>17 100 60<br>760 MHz<br>Gps<br>16 80 50<br>870 MHz<br>15 60 40<br>A Y N<br>ηD 760 MHz<br>14 760 MHz 40 30<br>820 MHz<br>820 MHz<br>13 Pout 20 20<br>870 MHz<br>V2<br>12 ei eee 0 10<br>0.03 0.1 1 2<br>Pin, INPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out η<br>P<br>**----- End of picture text -----**<br>
**Figure 15. Power Gain, CW Output Power and Drain Efficiency versus Input Power and Frequency**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
12
**==> picture [415 x 644] intentionally omitted <==**
**----- Start of picture text -----**<br>
||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|760--870 MHz BROADBAND REFERENCE CIRCUIT|
|.|Es|etSESWwW|a|Soe|a|seen are|noewaseesePECisse REREE“HF|k|CreCrate oftteHt|
|Snsueesrte|[passes]|AE|
|Zo = 2 Ω|
|el?|e|Fae2gSe fo|SmeeSt|e|t|aHel ||
|Ve|2|f = 870 MHz|aneee ee|Zload|&|c|o|
|a\|||eeeseeuatiaee|
|%\3|cog aa|SS|
|||
|BY|ee3 Asis|eae|HEE|
|f = 760 MHz|
|=\\|ek|oe|
|oe <e|Sate|oO Se CO|o>|% SSO|<>|SSE|
|aN°|“4|--|SEa|.|[S]|f = 760 MHz|i|[e]|PAY TH|
|:=o|[E]|[S]|
|x|
|f = 870 MHz|
|0|axeEPO|e|a|e|Zsource|OR|SSR|
|S|R|L|Seg|re|
|ONS|My|K e|OTTe:|p|a|ai]stir|a|TD aa|n|siinOO|e|s|e|y|
|VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.|
|f|Zsource|Zload|
|MHz|Ω|Ω|
|760|0.85|--|j1.31|0.80|--|j0.92|
|770|0.80|--|j1.30|0.78|--|j0.88|
|780|0.75|--|j1.28|0.78|--|j0.85|
|790|0.69|--|j1.26|0.76|--|j0.81|
|800|0.65|--|j1.24|0.76|--|j0.78|
|810|0.59|--|j1.21|0.72|--|j0.75|
|820|0.55|--|j1.18|0.70|--|j0.73|
|830|0.51|--|j1.15|0.67|--|j0.70|
|840|0.46|--|j1.11|0.62|--|j0.66|
|850|0.42|--|j1.01|0.57|--|j0.62|
|860|0.39|--|j1.02|0.52|--|j0.57|
|870|0.36|--|j0.97|0.48|--|j0.52|
|Zsource|=|Test circuit impedance as measured from|
|gate to ground.|
|Zload|=|Test circuit impedance as measured from|
|drain to ground.|
|Input|Device|Output|
|Matching|Under|Matching|
|Network|Test|Network|
|50 Ω|50 Ω|
|Zsource|Zload|
**----- End of picture text -----**<br>
**Figure 14. Broadband Series Equivalent Source and Load Impedance — 760--870 MHz**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
13
## **PACKAGE DIMENSIONS**
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
14
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
15
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
16
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
17
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
18
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
19
## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following documents, software and tools to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
- AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|May 2012|• Initial Release of Data Sheet|
|1|Aug. 2012|•<br>Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used<br>during test, p. 1, 8<br>•<br>Fig. 10, Broadband Reference Circuit Component Layout — 760--870 MHz: added C18 and C19;<br>replaced L1 with R1 and L2 with L1, p. 9<br>•<br>Table 10, Broadband Reference Circuit Component Designations and Values — 760--870 MHz: changed<br>C14 description from 0.10μF to 10μF and part number from GRM21BR71H104KA01B to<br>GRM31CR61H106KA12L; changed C15 description from 0.01μF to 1μF and part number from<br>GRM21BR72A103KA01B to GRM21BR71H105KA12L; changed C17 description from 22 pF to 240 pF<br>and part number from ATC100A220JT150XT to ATC600F241JT250XT; added C18 and C19; replaced L1<br>with R1 and L2 with L1, p. 9<br>•<br>Fig. 11, Broadband Reference Circuit Schematic — 760--870 MHz: added C18 and C19; replaced L1 with<br>R1 and L2 with L1, p. 10<br>Modifications to Fig. 10, Table 10 and Fig. 11 will improve stability of the test circuit and improve performance<br>under a modulated signal, p. 9, 10|
**AFT09MS031NR1 AFT09MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
20
## _**How to Reach Us:**_
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Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.
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**AFT09MS031NR1 AFT09MS031GNR1** * freescale
> DocumRF D **e** nt Number: AFT09MS031Nvice Data Rev. 1, 8/2012Freescale Semiconductor, Inc.
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Updated at April 10, 2026
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