AFT09MS015NT1

RF FET Transistor, 40 VDC, 125 W, 136 MHz, 941 MHz, PLD-1.5W

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:40VDC; Continuous Drain Current Id:-; Power Dissipation Pd:125W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:PLD-1.5W; No.
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 2Pins
Channel Type: N Channel
Product Range: -
Power Dissipation: 125W
Transistor Mounting: Surface Mount
Transistor Case Style: PLD-1.5W
Operating Frequency Max: 941MHz
Operating Frequency Min: 136MHz
Drain Source Voltage Vds: 40VDC
Operating Temperature Max: 150°C
Continuous Drain Current Id: -

Delivery and price
Units per pack	1000
Price	3.97 €
Current stock	10+
Lead time	30 days

Datasheet

**Freescale Semiconductor** Technical Data 

Document Number: AFT09MS015N Rev. 1, 7/2014 

## **RF Power LDMOS Transistor** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET 

## **AFT09MS015NT1** 

Designed for mobile two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in mobile radio equipment. 

**136–941 MHz, 16 W, 12.5 V WIDEBAND RF POWER LDMOS TRANSISTOR** 

**Narrowband Performance** (12.5 Vdc, IDQ = 100 mA, TA = 25C, CW) 

|**Frequency**<br>**Gps**<br>**D**|||**Pout**||**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**(MHz)**<br>**(dB)**<br>**(%)**|||**(W)**||||||||||||||
|870 **(1)**<br>17.2<br>77.0|||16||||||||||||||
|**Wideband Performance** (12.5 Vdc, TA= 25C, CW)|||||||||||||||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>136--174<br>0.38<br>16.0<br>60.0<br>15<br>350--470<br>0.23<br>18.5<br>60.0<br>16<br>760--870 **(2)**<br>0.32<br>16.8<br>52.3<br>15<br>~~—————~~|||||||**PLD--1.5W**<br>“||||||||||
|**Load Mismatch/Ruggedness**|||||||||||||||||
|**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test**<br>**Voltage**<br>**Result**<br>870 **(1)**<br>CW<br>> 65:1 at all<br>Phase Angles<br>0.5<br>(3 dB Overdrive)<br>17<br>No Device<br>Degradation<br>1. Measured in 870 MHz narrowband test circuit.<br>2. Measured in 760--870 MHz UHF broadband reference circuit.<br>Gate<br>~~EEE} ~~}||||||~~i~~|||||||||||



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Note: The center pad on the backside of the package is the source terminal for the transistor. 

## **Features** 

- Characterized for Operation from 136 to 941 MHz 

- Unmatched Input and Output Allowing Wide Frequency Range Utilization 

**Figure 1. Pin Connections** 

- Integrated ESD Protection 

- Integrated Stability Enhancements 

- Wideband — Full Power Across the Band 

- Exceptional Thermal Performance 

- Extreme Ruggedness 

- High Linearity for: TETRA, SSB 

- In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. 

## **Typical Applications** 

- Output or Driver Stage VHF Band Mobile Radio 

- Output or Driver Stage UHF Band Mobile Radio 

- Output or Driver Stage for 700--800 MHz Mobile Radio 

**AFT09MS015NT1** ~~*treescale~~ 

 Freescale Semiconductor, Inc., 2014. All rights reserved. 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

1 

**Table 1. Maximum Ratings Rating Symbol Value Unit** Drain--Source Voltage VDSS --0.5, +40 Vdc Gate--Source Voltage VGS --6.0, +12 Vdc Operating Voltage VDD 17, +0 Vdc Storage Temperature Range Tstg --65 to +150 C Case Operating Temperature Range TC --40 to +150 C Operating Junction Temperature **[(1,2)]** TJ --40 to +150 C Total Device Dissipation @ TC = 25C PD 125 W Derate above 25C 1.0 W/C ~~=——~~ **Table 2. Thermal Characteristics Characteristic Symbol Value[(2,3)] Unit** ~~=>~~  Thermal Resistance, Junction to Case RJC 1.0 C/W Case Temperature 85C, 15 W CW, 12.5 Vdc, IDQ = 100 mA, 870 MHz ~~i~~ **Table 3. ESD Protection Characteristics Test Methodology Class** Human Body Model (per JESD22--A114) 2, passes 2500 V Machine Model (per EIA/JESD22--A115) A, passes 150 V Charge Device Model (per JESD22--C101) IV, passes 2000 V **Table 4. Moisture Sensitivity Level Test Methodology Rating Package Peak Temperature Unit** Per JESD22--A113, IPC/JEDEC J--STD--020 3 260 C ~~a~~ **Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **Characteristic Symbol Min Typ Max Unit Off Characteristics** Zero Gate Voltage Drain Leakage Current IDSS — — 10 Adc (VDS = 40 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current IDSS — — 2 Adc (VDS = 12.5 Vdc, VGS = 0 Vdc) Gate--Source Leakage Current IGSS — — 600 nAdc (VGS = 5 Vdc, VDS = 0 Vdc) **On Characteristics** Gate Threshold Voltage VGS(th) 1.8 2.2 2.6 Vdc (VDS = 10 Vdc, ID = 78 Adc) ~~—— ee~~ Drain--Source On--Voltage VDS(on) — 0.15 — Vdc (VGS = 10 Vdc, ID = 0.78 Adc) Forward Transconductance gfs — 4.4 — S (VDS = 10 Vdc, ID = 5.9 Adc) ~~Ee~~ **Dynamic Characteristics** Reverse Transfer Capacitance Crss — 1.04 — pF (VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance Coss — 34 — pF (VDS = 12.5 Vdc  30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Input Capacitance Ciss — 74 — pF (VDS = 12.5 Vdc, VGS = 0 Vdc  30 mV(rms)ac @ 1 MHz) ~~eee~~ 1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 

3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 

(continued) 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** 

|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|
|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 12.5 Vdc, IDQ= 100 mA, Pin= 0.3 W, f = 870 MHz<br>~~a~~|||
|Common--Source Amplifier Output Power<br>Pout<br>—<br>16.0<br>—<br>W<br>Drain Efficiency<br>D<br>—<br>77.0<br>—<br>%<br>~~oy~~|||
|**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system) IDQ= 100 mA|||
|**Frequency**<br>**Signal**<br>**Pin**|||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**|**Result**|
|870<br>CW<br>> 65:1 at all Phase Angles<br>0.5|17|No Device Degradation|
|(3 dB Overdrive)|||



**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

3 

**TYPICAL CHARACTERISTICS** 

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100<br>Ciss<br>Es ee eee _|<br>Coss<br>TELL<br>10<br>ee<br>aas<br>Crss<br>1 | | |fae|<br>=<br>Es ee es ss<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>0.1<br>0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 2. Capacitance versus Drain--Source Voltage<br>10 [9]<br>—_ a<br>VDD = 12.5 Vdc<br>————<br>10 [8] a ee<br>= ID = 1.47 Amps<br>1.68 Amps<br>10 [7]<br>| dP re Se<br>2.02 Amps<br>a<br>10 [6] rr  e e<br>eee<br>Ee<br>10 [5] Pe ee<br>90 100 110 120 130 140 150 160<br>TJ, JUNCTION TEMPERATURE (C)<br>Note:  MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>C, CAPACITANCE (pF)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>


**Figure 2. Capacitance versus Drain--Source Voltage** 

**Figure 3. MTTF versus Junction Temperature — CW** 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

4 

## **870 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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**Figure 4. AFT09MS015NT1 Narrowband Test Circuit Component Layout — 870 MHz** 

**Table 6. AFT09MS015NT1 Narrowband Test Circuit Component Designations and Values — 870 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1|RF Bead, Short|2743019447|Fair-Rite|
|C1|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C2, C13|0.1F Chip Capacitors|CDR33BX104AKWS|AVX|
|C3, C12|0.01F Chip Capacitors|C0805C103K5RAC|Kemet|
|C4, C11|56 pF Chip Capacitors|ATC100B560CT500XT|ATC|
|C5, C8, C9|5.6 pF Chip Capacitors|ATC100B5R6CT500XT|ATC|
|C6, C7|3.3 pF Chip Capacitors|ATC100B3R3CT500XT|ATC|
|C14|330F, 35 V Electrolytic Capacitor|MCGPR35V337M10X16-RH|Multicomp|
|C15, C10|9.1 pF Chip Capacitors|ATC100B9R1CT500XT|ATC|
|C16, C17|7.5 pF Chip Capacitors|ATC100B7R5CT500XT|ATC|
|C18, C19|6.2 pF Chip Capacitors|ATC100B6R2BT500XT|ATC|
|C20|1.5 pF Chip Capacitor|ATC100B1R5BT500XT|ATC|
|C21|3.9 pF Chip Capacitor|ATC100B3R9CT500XT|ATC|
|L1|5.0 nH, 2 Turn Inductor|A02TKLC|Coilcraft|
|L2|8.0 nH, 3 Turn Inductor|A03TKLC|Coilcraft|
|L3|2.5 nH, 1 Turn Inductor|A01TKLC|Coilcraft|
|PCB|Rogers RO4350B, 0.030,r = 3.66|D53709|MTL|



**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

5 

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r<br>|<br>F h<br>|<br>C h 4<br>7  [!<br>F h :<br>F h<br>F h |<br>t h A<br>E h<br>T ee<br>a oa<br>|<br>uy"<br>H H |<br>7<br>|<br>@)_ )<br>|<br>7 n p t 4<br>_<br>- H4h a<br>i<br>F h<br>|!<br>RF<br>OUTPUT<br>Z18<br>C21<br>Z17<br>C20<br>Z16<br>DS<br>V<br>L3<br>+ C14 C18 Z15 Taper<br><br>C19<br>C13 0.320<br>Z14 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>C12         <br>Z13<br>Description 0.620 0.320 0.320 0.620 0.320 0.320 0.120 0.120 0.080<br>C11 Z12         <br>L2<br>0.120 0.198 0.044 0.159 0.320 0.113 0.599 0.071 0.238<br>C16 Z11<br>C17<br>Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18<br>C10<br>Z10<br>C15 Taper Taper<br> <br>Z9<br>0.466 0.620<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>        <br>C8 DUT Description 0.080 0.120 0.320 0.320 0.466 0.620 0.620 0.620 0.620<br>Z8         <br>C9 0.328 0.490 0.610 0.107 0.082 0.070 0.300 0.370 0.375<br>B1 L1 Z7<br>Z6<br>Figure 5. AFT09MS015NT1 Narrowband Test Circuit Schematic — 870 MHz<br>Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9<br>C6 Table 7. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 870 MHz<br>C4 Z5<br>C7<br>C3 Z4<br>Z3<br>C2<br>C5<br>+ C1<br>Z2<br>Z1<br>GS<br>V<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

6 

**TYPICAL CHARACTERISTICS — 870 MHz** 

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22<br>20 VDD = 12.5 Vdc, f = 870 MHz<br>18 aA<br>16 Py [Aa] aa<br>14 a<br>12 TI Pin = 0.30 W<br>10 a<br>8 TA<br>6 ne Pin = 0.15 W<br>a<br>4 7<br>2<br>a a a<br>0 a> ae<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 6. Output Power versus Gate--Source Voltage<br>at a Constant Input Power<br>22 110<br>20 es| 100<br>18 90<br>1614 fe a ee Gps all 8070<br>12 ee 60<br>10 7 50<br>8 40<br>ie2<br>6 er 30<br>D<br>42 er PECrt Vf = 870 MHzDD = 12.5 Vdc, IDQ = 100 mA 1020<br>0 ee Pout 0<br>oe<br>0.01 0.1 1<br>Pin, INPUT POWER (WATTS)<br>Figure 7. Power Gain, Output Power and Drain<br>Efficiency versus Input Power<br>VDD = 12.5 Vdc, IDQ = 100 mA, Pout = 15 W<br>f Zsource Zload<br>MHz  <br>870 0.80 + j0.80 2.05 + j1.80<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50  50 <br>| 7" PT :<br>Zsource Zload<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>


**Figure 8. Narrowband Series Equivalent Source and Load Impedance — 870 MHz** 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

7 

## **760--870 MHz UHF BROADBAND REFERENCE CIRCUIT** 

|**Table 8. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 12.5 Volts, IDQ= 100 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>760<br>0.29<br>17.1<br>51.1<br>15.0<br>815<br>0.24<br>18.0<br>57.7<br>15.0<br>870<br>0.30<br>17.0<br>59.2<br>15.0<br>~~———~~||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**|**Pin**|||
|**(MHz)**<br>**Type**|**VSWR**<br>**(W)**<br>**Test Voltage, VDD**||**Result**|
|815<br>CW|> 65:1 at all<br>0.64<br>15||No Device|
|Phase Angles<br>(3 dB Overdrive)|||Degradation|



**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

8 

**760--870 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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**Figure 9. AFT09MS015NT1 UHF Broadband Reference Circuit Component Layout — 760--870 MHz** 

**Table 10. AFT09MS015NT1 UHF Broadband Reference Circuit Component Designations and Values — 760--870 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2|RF Beads|2743019447|Fair-Rite|
|C1, C5, C6, C7, C8|20 pF Chip Capacitors|GQM2195C2E200GB12D|Murata|
|C2|8.2 pF Chip Capacitor|GQM2195C2E8R2BB12D|Murata|
|C3|10 pF Chip Capacitor|GQM2195C2E100FB12D|Murata|
|C4, C13|56 pF Chip Capacitors|GQM2195C2E560GB12D|Murata|
|C9|1F Chip Capacitor|GRM31MR71H105KA88L|Murata|
|C10|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|C11, C12|12 pF Chip Capacitors|GQM2195C2E120FB12D|Murata|
|C14, C15|5.6 pF Chip Capacitors|GQM2195C2E5R6BB12D|Murata|
|C16|100 pF Chip Capacitor|GQM2195C2E101GB12D|Murata|
|J1|Right-Angle Breakaway Headers (3 pins)|22-28-8360|Molex|
|L1|22 nH Air Core Inductor|0908SQ-22NJL|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT09MS015NT1|Freescale|
|R1|200, 1/8 W Chip Resistor|CRCW0805200RJNEA|Vishay|
|PCB|0.020,r = 4.8, FR4|D55295|MTL|



**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

9 

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=<br>RF<br>OUTPUT<br>Z19<br>C16<br>Z18<br>C15<br>Z17<br>C14<br>DD<br>V<br>C10 Z16<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>B2 C11 Z15         <br>C13 C12<br>Description 0.180 0.034 0.034 0.180 0.180 0.034 0.034 0.034 0.050<br>        <br>Z13 Z14<br>L1 Z12<br>0.027 0.160 0.350 0.210 0.215 0.065 0.450 0.100 0.150<br>Z11<br>Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19<br>DUT<br>Z8<br>R1 Z9<br>C7<br>Z10 Z7 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>C8          <br>C4<br>C5 Description 0.050 0.034 0.034 0.034 0.250 0.250 0.250 0.250 0.034 0.034<br>Z6<br>C6          <br>B1 C9 Z5 0.150 0.100 0.485 0.065 0.040 0.222 0.130 0.027 0.066 0.386<br>Z4<br>C3<br>GS<br>V Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10<br>Table 11. AFT09MS015NT1 Narrowband Test Circuit Microstrips — 760--870 MHz<br>Z3<br>C2 Figure 10. AFT09MS015NT1 UHF Broadband Reference Circuit Schematic — 760--870 MHz<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

10 

**TYPICAL CHARACTERISTICS — 760--870 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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21 64<br>VDD = 12.5 Vdc<br>20 P in  = 0.32 W (Avg.) 61<br>19 = IDQ = 100 mA AS D 58<br>18 a a 55<br>17 4A 52<br>16 Gps 18<br>15 ee 17<br>14 aae e 16<br>13 15<br>ee ee Pout<br>12 14<br>es<br>740 760 780 800 820 840 860 880<br>f, FREQUENCY (MHz)<br>Figure 11. Power Gain, Drain Efficiency and Output Power versus<br>Frequency at a Constant Input Power<br>20<br>f = 815 MHz<br>1.75<br>f = 815 MHz<br>1.5<br>15<br>P| VDD = 12.5 Vdc |v} 1.25 Rae VDD = 12.5 Vdc<br>Pin = 0.32 W 1 Pin = 0.32 W VDD = 12.5 Vdc<br>10 Pin = 0.16 W<br>P| : sf 7 0.75 ae ain eeere<br>VDD = 12.5 Vdc<br>Pin = 0.16 W 0.5<br>5 TAZ mya a<br>0.25<br>5 | EARPHAE<br>0<br>Detail A 0 0.25 0.5 0.75 1 1.25 1.5 1.75 2<br>0 ee Ama<br>0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>a | | eet<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>Pout Pout<br>**----- End of picture text -----**<br>


**Figure 12. Output Power versus Gate--Source Voltage** 

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**----- Start of picture text -----**<br>
22 85<br>VDD = 12.5 Vdc f = 815 MHz<br>21 D 65<br>IDQ = 100 mA<br>20 estSNSeameee 760 MHz aaa 870 MHz 45<br>19 ee ed 815 MHz 25<br>18 870 MHz 5<br>760 MHz<br>17 TN 28<br>Pout<br>16 LETH| NM 21<br>760 MHz<br>15 Pan 14<br>14 815 MHz 870 MHz G ps 7<br>13 PEAae ii ni 0<br>0.01 0.1 1 2<br>Pin, INPUT POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency** 

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|||||**760--870 MHz UHF BROADBAND REFERENCE CIRCUIT**|
|---|---|---|---|---|
|f = 760 MHz<br>f = 870 MHz<br>f = 870 MHz<br>f = 760 MHz<br>Zsource<br>Zload<br>Zo= 5<br>SQ<br>—<br>Ass POSS<br>aye ~~S~~eePe<br>LL |<br>~~e~~ee<br>,KEK SC)<br>Soe epeerstiiiamasLs<br>eK<br>fY<br>4 QO Ss~~SS~~EA onan CT ALS<br>Sh BORONCSLOSS IA eeeaeamy AS<br>MRERRL,SS~~S~~SSore HR<br>Le**e**~~e~~ ee ae<br>/<br>Lys<br>~~e~~e<br>SXe/g I<br>OR**E** oRSSeS Sra<br>He<br>3 LP~~e~~~~**e**~~<br>eeeeere<br>AIA~~OE~~<br>ey,awn<br>A/<br>ffl?<br>..~~e~~<br>Si<br>OPT ERLERELYLRERQOSSSSSESE<br>slo<br>.<br>Lt TORR,ORERROSSS<br>ld hee~~2~~<br>BeeORI<br>oP<br>LA Psfarse we<br>wee LEERYEe<br>,<br>sehe~~ae~~ aaaTeHE<br>gf<br>/&ce nace aaaHalel pattatteH aS Deeeeeeeit<br>tle<br>Sebeectieeicie puu**a**uaseetertt<br>istfaHal<br>[ttt |EL<br>Ms<br>ays eicee H na~~e~~ ©)ee a<br>§<br>sesersnrirritirict Beaeeeatated!<br>pucTNyee<br>comPonenz(<br>$ a Bucnenc<br>es<br>SSE ceeeeea~~e~~oe<br>a~~we~~<br>«<br>! eeecater~~S~~ESS *<br>a)<br>|AEH eececsrestseet<br>2\"\.Fulaeae|||||
|||||VDD= 12.5 Vdc, IDQ= 100 mA, Pout= 15 W|
|||||**f**<br>**Zsource**<br>**Zload**|
|||||**MHz**<br><br>|
|||||760<br>1.35 + j0.86<br>2.53 - j0.83|
|||||770<br>1.23 + j0.79<br>2.44 - j0.68|
|||||780<br>1.04 + j0.78<br>2.29 - j0.39|
|||||790<br>0.90 + j0.80<br>2.25 - j0.16|
|||||800<br>0.84 + j0.84<br>2.30 - j0.02|
|||||810<br>0.85 + j0.92<br>2.49 + j0.02|
|||||820<br>0.92 + j0.99<br>2.79 - j0.06|
|||||830<br>0.96 + j1.02<br>2.99 - j0.19|
|||||840<br>0.88 + j1.03<br>3.01 - j0.21|
|||||850<br>0.71 + j1.04<br>2.85 - j0.05|
|||||860<br>0.54 + j1.05<br>2.68 + j0.14|
|||||870<br>0.43 + j1.10<br>2.62 + j0.25|
|||||Zsource = Test circuit impedance as measured from|
|||||gate to ground.|
|||||Zload<br>= Test circuit impedance as measured from|
|||||drain to ground.|
|||||Input<br>Device<br>Output|
|||||Matching<br>Network<br>Under<br>Test<br>Matching<br>Network<br>50<br>50|
||||||
||||||
|||||**Zsource**<br>**Zload**|



**Figure 14. UHF Broadband Series Equivalent Source and Load Impedance — 760--870 MHz** 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

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0.28<br>(7.11)<br>0.165<br>(4.91)<br>-<br>a<br>0.089 0.155<br>(2.26) (3.94)<br>Solder pad with Ee<br>thermal via structure.<br>0.085<br>(2.16)<br>Inches<br>_<br>(mm)<br>**----- End of picture text -----**<br>


**Figure 15. PCB Pad Layout for PLD--1.5W** 

**==> picture [80 x 83] intentionally omitted <==**

**----- Start of picture text -----**<br>
A9M15<br>N( )B<br>YYWW<br>**----- End of picture text -----**<br>


**Figure 16. Product Marking** 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

13 

## **PACKAGE DIMENSIONS** 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

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## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following resources to aid your design process. 

## **Application Notes** 

- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

- .s2p File 

## **Development Tools** 

- Printed Circuit Boards 

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Feb. 2014|<br>Initial Release of Data Sheet|
|1|July 2014|<br>Fig. 6, Output Power versus Gate--Source Voltage at a Constant Input Power: updated Pinvalues to reflect<br>correct unit of measure, p. 7<br><br>Fig. 8, Narrowband Series Equivalent Source and Load Impedance -- 870 MHz: updated Zsourceand Zload<br>values to match final data from product model, p. 7|



**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

17 

## _**How to Reach Us:**_ 

**Home Page:** freescale.com 

**Web Support:** freescale.com/support 

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc. 

**AFT09MS015NT1** 

RF Device Data Freescale Semiconductor, Inc. 

Document Number: AFT09MS015N 18Rev. 1, 7/2014

Updated at April 10, 2026

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