AFT09MS007NT1

RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:30VDC; Continuous Drain Current Id:-; Power Dissipation Pd:114W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:PLD-1.5W; No.
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 2Pins
Channel Type: N Channel
Product Range: -
Power Dissipation: 114W
Transistor Mounting: Surface Mount
Transistor Case Style: PLD-1.5W
Operating Frequency Max: 941MHz
Operating Frequency Min: 136MHz
Drain Source Voltage Vds: 30VDC
Operating Temperature Max: 150°C
Continuous Drain Current Id: -
Delivery and price
Units per pack	1000
Price	4.55 €
Current stock	100+
Lead time	30 days
Datasheet
**Freescale Semiconductor** Technical Data 

Document Number: AFT09MS007N Rev. 1, 4/2014 

## **RF Power LDMOS Transistor** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET 

## **AFT09MS007NT1** 

Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device makes it ideal for large--signal, common--source amplifier applications in handheld radio equipment. 

**136–941 MHz, 7 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR** 

**Narrowband Performance** (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW) 

|**Frequency**<br>**Gps**<br>**D**|||**Pout**|||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**(MHz)**<br>**(dB)**<br>**(%)**|||**(W)**|||||||||||||
|870 **(1)**<br>15.2<br>71.0|||7.3|||||||||||||
|**Wideband Performance** (7.5 Vdc, TA= 25C, CW)<br>**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>136–174<br>0.25<br>14.6<br>69.0<br>7.2<br>350–470 **(2,5)**<br>0.20<br>15.6<br>60.9<br>7.3<br>450–520 **(3,5)**<br>0.22<br>15.4<br>56.0<br>7.5<br>760–860 **(4,5)**<br>0.23<br>15.1<br>48.1<br>7.5<br>**Load Mismatch/Ruggedness**<br>**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test**<br>**Voltage**<br>**Result**<br>870 **(1)**<br>CW<br>> 65:1 at all<br>Phase Angles<br>0.4<br>(3 dB Overdrive)<br>10.8<br>No Device<br>Degradation<br>~~S=5e=~~<br>~~a~~||||||Gate<br>~~H~~|**PLD--1.5W**<br>~~.~~<br>~~Hot~~|||||||||
|1. Measured in 870 MHz narrowband test circuit.<br>2. Measured in 350–470 MHz UHF broadband reference circuit.|||||Note:|The center pad on the backside of<br>the package is the source terminal||||The center pad on the backside of<br>the package is the source terminal||||||



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Gate Drain<br>**----- End of picture text -----**<br>


Note: The center pad on the backside of the package is the source terminal for the transistor. 

3. Measured in 450–520 MHz UHF broadband reference circuit. 

4. Measured in 760–860 MHz UHF broadband reference circuit. 

5. The values shown are the minimum measured performance numbers across the indicated frequency range. 

**Figure 1. Pin Connections** 

## **Features** 

- Characterized for Operation from 136 to 941 MHz 

- Unmatched Input and Output Allowing Wide Frequency Range Utilization 

- Integrated ESD Protection 

- Integrated Stability Enhancements 

- Wideband — Full Power Across the Band 

- Exceptional Thermal Performance 

- Extreme Ruggedness 

- High Linearity for: TETRA, SSB 

- In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel. 

## **Typical Applications** 

- Output Stage VHF Band Handheld Radio 

- Output Stage UHF Band Handheld Radio 

- Output Stage for 700–800 MHz Handheld Radio 

**AFT09MS007NT1** ~~*treescale~~ 1 

 Freescale Semiconductor, Inc., 2013–2014. All rights reserved. 

RF Device Data Freescale Semiconductor, Inc. 

**Table 1. Maximum Ratings** 

|**Rating**<br>**Symbol**<br>**Value**<br>**Unit**<br>Drain--Source Voltage<br>VDSS<br>–0.5, +30<br>Vdc<br>Gate--Source Voltage<br>VGS<br>–6.0, +12<br>Vdc<br>Operating Voltage<br>VDD<br>12.5, +0<br>Vdc<br>Storage Temperature Range<br>Tstg<br>–65 to +150<br>C<br>Case Operating Temperature Range<br>TC<br>–40 to +150<br>C<br>Operating Junction Temperature **(1,2)**<br>TJ<br>–40 to +150<br>C<br>Total Device Dissipation @ TC= 25C<br>Derate above 25C<br>PD<br>114<br>0.91<br>W<br>W/C<br>~~===~~|
|---|
|**Table 2. Thermal Characteristics**|
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 74C, 7 W CW, 7.5 Vdc, IDQ= 100 mA, 870 MHz<br>RJC<br>1.1<br>C/W<br>~~i~~|
|**Table 3. ESD Protection Characteristics**|
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>B, passes 200 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~=~~|
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**Off Characteristics**|
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 30 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 7.5 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>1<br>nAdc<br>~~SS~~|
|**On Characteristics**|
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 110Adc)<br>VGS(th)<br>1.6<br>2.1<br>2.6<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1.1 Adc)<br>VDS(on)<br>—<br>0.12<br>—<br>Vdc<br>Forward Transconductance<br>(VDS= 7.5 Vdc, ID= 3 Adc)<br>gfs<br>—<br>9.8<br>—<br>S<br>~~ee~~|
|**Dynamic Characteristics**<br>Reverse Transfer Capacitance<br>(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>2.7<br>—<br>pF<br>Output Capacitance<br>(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>56<br>—<br>pF<br>Input Capacitance<br>(VDS= 7.5 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>107<br>—<br>pF<br>~~ee~~|
|1. Continuous use at maximum temperature will affect MTTF.|
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF|
|calculators by product.|



3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 

(continued) 

**AFT09MS007NT1** 

RF Device Data 

Freescale Semiconductor, Inc. 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** 

|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|
|---|---|---|
|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**<br>**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 7.5 Vdc, IDQ= 100 mA, Pin= 0.22 W, f = 870 MHz<br>~~a~~|||
|Common--Source Amplifier Output Power<br>Pout<br>—<br>7.3<br>—<br>W<br>Drain Efficiency<br>D<br>—<br>71.0<br>—<br>%<br>~~oy~~|||
|**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system) IDQ= 100 mA|||
|**Frequency**<br>**Signal**<br>**Pin**|||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**|**Result**|
|870<br>CW<br>> 65:1 at all Phase Angles<br>0.4|10.8|No Device Degradation|
|(3 dB Overdrive)|||



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

3 

## **TYPICAL CHARACTERISTICS** 

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200 4<br>100 Ciss 3.5 TA = 25C VGS = 3.75 Vdc<br>PT | TT ptt tt |<br>3<br>— Pf Ep [eee]<br>Coss<br>2.5 3.5 Vdc<br>2<br>10 eee Ee<br>1.5 3.25 Vdc<br>i 1 = __|ir<br>Crss<br>3 Vdc<br>0.5<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc 2.5 Vdc<br>1 ee 0 oT<br>0 2 4 6 8 10 12 0 1 2 3 4 5 6 7 8 9 10<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 2. Capacitance versus Drain--Source Voltage Figure 3. Drain Current versus Drain--Source Voltage<br>10 [9]<br>VDD = 7.5 Vdc<br>——<br>ID = 1.06 Amps<br>10 [8]<br>fe ee<br>1.33 Amps<br>1.59 Amps<br>10 [7] a———— ae<br>a<br>10 [6]<br>SS<br>—————<br>10 [5] es ee<br>90 100 110 120 130 140 150 160<br>TJ, JUNCTION TEMPERATURE (C)<br>Note:  MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>C, CAPACITANCE (pF) , DRAIN CURRENT (AMPS)<br>IDS<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>


**Figure 3. Drain Current versus Drain--Source Voltage** 

**Figure 4. MTTF versus Junction Temperature — CW** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

4 

## **870 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|C5|L3|C16|
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|AFT09MS007N|
|so"Sy|freescale”|D49708|Rev. 2|
|semiconductor|
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|*C4, C14 and C15 are mounted vertically.|
|Figure 5. AFT09MS007NT1 Narrowband Test Circuit Component Layout — 870 MHz|
|Table 6. AFT09MS007NT1 Narrowband Test Circuit Component Designations and Values — 870 MHzponent Designations and Values — 870 MHzonent Designations and Values — 870 MHzgnations and Values — 870 MHznations and Values — 870 MHz|
|Part|Description|Part Number|Manufacturer|
|B1|RF Bead, Short|2743019447|Fair-Rite|
|C1|22 F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C2, C12|0.1 F Chip Capacitors|CDR33BX104AKWS|Kemet|
|C3, C11|0.01 F Chip Capacitors|C0805C103K5RAC|Kemet|
|C4, C10, C16|56 pF Chip Capacitors|ATC100B560CT500XT|ATC|
|C5|3.9 pF Chip Capacitor|ATC100B3R9CT500XT|ATC|
|C6, C7|7.5 pF Chip Capacitors|ATC100B7R5CT500XT|ATC|
|C8, C9|6.8 pF Chip Capacitors|ATC100B6R8CT500XT|ATC|
|C13|330 F, 35 V Electrolytic Capacitor|MCGPR35V337M10X16-RH|Multicomp|
|C14, C15|3.6 pF Chip Capacitors|ATC100B3R6CT500XT|ATC|
|L1|8.0 nH Inductor|A03TKLC|Coilcraft|
|L2|18.5 nH Inductor|A05TKLC|Coilcraft|
|L3|5.0 nH Inductor|A02TKLC|Coilcraft|
|PCB|Rogers RO4350B, 0.030, r|= 3.66|D49708|MTL|

**----- End of picture text -----**<br>


**Table 6. AFT09MS007NT1 Narrowband Test Circuit Component Designations and Values — 870 MHzponent Designations and Values — 870 MHzonent Designations and Values — 870 MHzgnations and Values — 870 MHznations and Values — 870 MHz** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

5 

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VBIAS + VSUPPLY<br>+ C10 C11 C12 C13<br>C1 C2 C3 B1<br>TIT III!<br>L2<br>C4<br>C8 C15<br>RF<br>L1<br>C6<br>RF Z8 Z9 Z10 Z11 Z12 Z13 L3 Z14 Z15 OUTPUT<br>INPUT<br>Z1 Z2 Z3 Z4 Z5 Z6 Z7<br>C16<br>C9 C14<br>C5<br>C7<br>**----- End of picture text -----**<br>


**Figure 6. AFT09MS007NT1 Narrowband Test Circuit Schematic — 870 MHz** 

**Table 7. AFT09MS007NT1 Narrowband Test Circuit Microstrips — 870 MHz** 

|**Microstrip**|**Description**||**Microstrip**|**Description**|
|---|---|---|---|---|
|Z1|0.3280.080Microstrip||Z9|0.2950.620Microstrip|
|Z2|0.4900.120Microstrip||Z10|0.0460.620Microstrip|
|Z3|0.6100.320Microstrip||Z11|0.1590.6200.320Taper|
|Z4|0.1600.3200.620Taper||Z12|0.3790.320Microstrip|
|Z5|0.0580.620Microstrip||Z13|0.0550.320Microstrip|
|Z6|0.2880.620Microstrip||Z14|0.6650.120Microstrip|
|Z7|0.3940.620Microstrip||Z15|0.2380.080Microstrip|
|Z8|0.3980.620Microstrip||||



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

6 

**TYPICAL CHARACTERISTICS — 870 MHz** 

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12<br>VDD = 7.5 Vdc, f = 870 MHz<br>eo<br>10 tT<br>8 TTT<br>yy Ye<br>Pin = 0.22 W<br>6 tit<br>Pin = 0.11 W<br>PLT yy<br>4<br>2<br>PTPATAA<br>0 EBZ  ean<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 7. Output Power versus Gate--Source Voltage<br>at a Constant Input Power<br>18 90<br>16 80<br>14 p Gps e 70<br>1210 Peee NT 6050<br>8 ae 40<br>6 a atr 30<br>D<br>4 20<br>2 Cee VDD = 7.5 Vdc, IDQ = 100 mA 10<br>Pout f = 870 MHz<br>0 E tt 0<br>ui<br>0.01 0.1 0.7<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)<br>Pout D<br>**----- End of picture text -----**<br>


**Figure 8. Power Gain, Output Power and Drain Efficiency versus Input Power** 

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VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 7 W<br>f Zsource Zload<br>MHz  <br>870 0.54 + j1.35 1.31 + j1.93<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50  50 <br>iI . 2<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

7 

## **350–470 MHz UHF BROADBAND REFERENCE CIRCUIT** 

|**Table 8. 350–470 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 350–470 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 350–470 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 350–470 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 350–470 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|
|VDD= 7.5 Vdc, IDQ= 200 mA, TA= 25C, CW|||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>350<br>0.15<br>16.6<br>60.9<br>7.3<br>410<br>0.15<br>16.6<br>66.5<br>7.3<br>470<br>0.20<br>15.6<br>70.1<br>7.3<br>~~——————~~|||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)|||||
|**Frequency**<br>**Signal**|**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**|**(W)**<br>**Test Voltage, VDD**|||**Result**|
|470<br>CW<br>> 65:1 at all|0.4|10.8||No Device|
|Phase Angles|(3 dB Overdrive)|||Degradation|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

8 

## **350–470 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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|Figure 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 350–470 MHz|
|Table 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHzponent Designations and Values — 350–470 MHzonent Designations and Values — 350–470 MHzgnations and Values — 350–470 MHznations and Values — 350–470 MHz|
|Part|Description|Part Number|Manufacturer|
|C1, C10, C19|100 pF Chip Capacitors|ATC600F101JT250XT|ATC|
|C2|10 pF Chip Capacitor|ATC600F100JT250XT|ATC|
|C3|3.0 pF Chip Capacitor|ATC600F3R0BT250XT|ATC|
|C4, C8|27 pF Chip Capacitors|ATC600F270JT250XT|ATC|
|C5|5.1 pF Chip Capacitor|ATC600F5R1BT250XT|ATC|
|C6, C7|30 pF Chip Capacitors|ATC600F300JT250XT|ATC|
|C9|10 nF Chip Capacitor|C1210C103J5GAC-TU|Kemet|
|C11|82 pF Chip Capacitor|ATC600F820JT250XT|ATC|
|C12|240 pF Chip Capacitor|ATC600F241JT250XT|ATC|
|C13|2.2 F Chip Capacitor|C3225X7R1H225K250AB|TDK|
|C14|0.1 F Chip Capacitor|GRM21BR71H104KA01B|Murata|
|C15|0.01 F Chip Capacitor|GRM21BR72A103KA01B|Murata|
|C16|47 pF Chip Capacitor|ATC600F470JT250XT|ATC|
|C17|18 pF Chip Capacitor|ATC600F180BT250XT|ATC|
|C18|7.5 pF Chip Capacitor|ATC100A7R5JT150XT|ATC|
|J1|3--pin Header|22-28-8360|Molex|
|L1|8.1 nH Inductor|0908SQ8N1|Coilcraft|
|L2|2.55 nH, 3 Turn Inductor|0906-3JLC|Coilcraft|
|L3, L4, L5|21.5 nH Inductors|0908SQ22N|Coilcraft|
|L6|3.85 nH, 4 Turn Inductor|0906-4JLC|Coilcraft|
|L7|8.9 nH Inductor|0806SQ8N9|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT09MS007NT1|Freescale|
|R1|62 , 1/10 W Chip Resistor|RG2012N-620-B-T1|Susumu|
|PCB|Shengyi S1000-2, 0.020, r = 4.8|D58008|MTL|

**----- End of picture text -----**<br>


**Table 10. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–470 MHzponent Designations and Values — 350–470 MHzonent Designations and Values — 350–470 MHzgnations and Values — 350–470 MHznations and Values — 350–470 MHz** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

9 

**==> picture [332 x 675] intentionally omitted <==**

**----- Start of picture text -----**<br>
B ,<br>RF<br>OUTPUT<br>Z25<br>C19<br>Z24 C18<br>Z23<br>L7<br>SUPPLY<br>V Z22 C17<br>C15<br>Z21<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>C14        <br>L6 0.170 0.046 0.046 0.046 0.046 0.046 0.046 0.034<br>C13 Description<br>Z20 C16        <br>C12<br>0.088 0.205 0.148 0.032 0.195 0.089 0.046 0.060<br>Z19<br>L4 L5 Z18<br>Z17<br>Microstrip Z18 Z19 Z20 Z21 Z22 Z23 Z24 Z25<br>Z16<br>Z15<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>R1 Z14        <br>0.046 0.046 0.046 0.300 0.300 0.146 0.146 0.170<br>C11 Z13 Description        <br>Z12<br>C8<br>C10 0.037 0.055 0.235 0.121 0.031 0.070 0.070 0.160<br>Z11<br>C7<br>L3<br>C9 Z10 C6<br>Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17<br>Z9<br>BIAS Z8<br>V<br>L2<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>        <br>Z7<br>C5<br>0.034 0.046 0.046 0.046 0.046 0.046 0.046 0.046 0.046<br>Description<br>Z6         <br>Z5 C4 Figure 11. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 350–470 MHz 0.060 0.026 0.026 0.060 0.054 0.054 0.060 0.084 0.044<br>C3<br>Z4<br>L1 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9<br>Table 11. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 350–470 MHz<br>Z3<br>C2<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

10 

## **TYPICAL CHARACTERISTICS — 350–470 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [276 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 90<br>VDD = 7.5 Vdc<br>19 Pin = 0.20 W 80<br>IDQ = 200 mA D<br>18 eS 70<br>17 = |ae|ft 60<br>16 PTT| | | ETT 50<br>Gps<br>15 8<br>HES<br>14 a ee 7<br>Pout<br>13 P| fF fF ft ff EN 6<br>12 Fe | | tf | ft | ft 5<br>320 340 360 380 400 420 440 460 480 500<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 12. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power** 

**==> picture [451 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
14<br>f = 410 MHz<br>0.8<br>12 VDD = 7.5 Vdc, Pin = 0.1 W f = 410 MHz<br>10 0.6<br>cE VDD = 7.5 Vdc, Pin = 0.25 W WIT tila VDD = 7.5 Vdc<br>8 Pin = 0.25 W<br>een” 7/0 0.4 ee<br>VDD = 7.5 Vdc<br>6<br>Pin = 0.1 W<br>HHA 0.2 Te<br>4<br>PET VIZ UL |<br>2<br>PTT MiATT TT = 0 LL LL<br>Detail A 0 0.4 0.8 1.2 1.6 2<br>es Ae<br>0<br>0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 13. Output Power versus Gate--Source Voltage<br>20 80<br>350 MHz f = 470 MHz<br>D<br>19 350 MHz 60<br>410 MHz<br>18 ST 40<br>410 MHz<br>17 ee ae Nl 20<br>470 MHz 350 MHz<br>16 V DD = 7.5 Vdc 10<br>IDQ = 200 mA<br>15 fp Neer P out il 7.5<br>410 MHz<br>14 an 5<br>en aa 470 MHz il<br>1213 poeell Gps 2.50<br>0.01 0.1 1<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>out out<br>P P<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 14. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

11 

**350–470 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [369 x 555] intentionally omitted <==**

**----- Start of picture text -----**<br>
4S He <& f = 470 MHz I LS Zo = 10  L 7<br>YOK Hy<br>Zsource<br>(MUIR R A H HA<br>he] f = 350 MHz x<br>f = 470 MHz<br>Sep ~ 8<br>PMY Re e Pc SSS CTY<br>f = 350 MHz Zload<br>BAL | LO S” oS AH<br>fei seein TTT LORE LIRIK OSS ASSET<br>|. eee MaemLIER<br>Faea ee me merene emacsRRS SS<br>ccdeeeeuirei ie peaeeaeesy ace PARADA LEE<br>ceeiseaegabenrsersscees Rave A emaensne eameseeaeran<br>Gee | ealece Peteneeoameaare asses<br>Sumuessgsetsers?s22' ome Et PH LEE PT PK<br>8 co Bla eeeesonenyKe<br>Gites artemis (5 Herre<br>aucensscccsusseet .<br>\as<br>na ia sonesenCaeSPOaSSKSERASKK,RR<br>VDD = 7.5 Vdc, IDQ = 200 mA, Pout = 7.5 W<br>f Zsource Zload<br>MHz  <br>350 2.7 + j6.6 3.5 + j4.2<br>370 3.3 + j6.2 3.7 + j4.2<br>390 3.1 + j5.4 3.5 + j4.0<br>410 2.6 + j6.1 3.5 + j5.0<br>430 2.1 + j7.1 3.6 + j5.9<br>450 2.2 + j7.3 3.6 + j5.6<br>470 2.0 + j7.7 3.0 + j5.8<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50  50 <br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 15. UHF Broadband Series Equivalent Source and Load Impedance — 350–470 MHz** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

12 

## **450–520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

|**Table 12. 450–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 450–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 450–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 450–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|(In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 150 mA, TA= 25C, CW|||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>450<br>0.21<br>15.4<br>57.7<br>7.5<br>485<br>0.21<br>15.5<br>56.0<br>7.5<br>520<br>0.18<br>16.2<br>66.3<br>7.5<br>~~——————~~|||||
|**Table 13. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)|||||
|**Frequency**<br>**Signal**<br>**Pin**|||||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**|||**Result**|
|520<br>CW<br>> 65:1 at all<br>0.2||10.8||No Device|
|Phase Angles<br>(3 dB Overdrive)||||Degradation|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

13 

## **450–520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [334 x 150] intentionally omitted <==**

**----- Start of picture text -----**<br>
J1 C7 C8<br>oo C1 o| LI oo0o$° C6 og e000, 0 9990 0 COO0O0C0 0 LI joo °<br>0 S| Jo () e ee EB ) me G e C16<br>coo L1 Owlal Jo L3 BS| VGG - VDD ie1 C9 % fo) Th O C15 fo)<br>C10<br>OTS’ Jo a Tio @gF o ee)<br>e)5 Oo ~ re) C5 OFHI] 7~fo2e°90 e090fe) 1 (omme) ie)PS fe)oO} \Sial N fe)jo fe)fo)<br>o C2 6detl | )|e °; ° o| L4 LpVjaar C17 ) L7 S oO<br>R1<br>L2 fe) SNae fe) =H |O Soo oeO l k le) fe) C14 fe)<br>° op N se C4 e [ S ael L5 SS — _ NE hE °<br>o 80°08 _ Q1 C13 — L6 S fo) fo)<br>onto) C3 |_| C11 C12 ° fo)<br>TS<br>° D49947 o000( ) fo)0 SS 2 %%° 9600 000 00o ( jyooee fe)fe)<br>9000000000 00000000000000000000000000°) )<br>AFT09MS007N Rev. 2<br>**----- End of picture text -----**<br>


**Figure 16. AFT09MS007NT1 UHF Broadband Reference Circuit Component Layout — 450–520 MHz** 

**Table 14. AFT09MS007NT1 UHF Broadband Reference Circuit Component Designations and Values — 450–520 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C16|100 pF Chip Capacitors|ATC600F101JT250XT|ATC|
|C2|7.5 pF Chip Capacitor|GQM2195C2E7R5BB12D|Murata|
|C3|5.6 pF Chip Capacitor|ATC600F5R6BT250XT|ATC|
|C4|39 pF Chip Capacitor|ATC600F390JT250XT|ATC|
|C5, C9|240 pF Chip Capacitors|ATC600F241JT250XT|ATC|
|C6, C7|0.1F Chip Capacitors|GRM21BR71H104KA01B|Murata|
|C8|0.01F Chip Capacitor|GRM21BR72A103KA01B|Murata|
|C10|2.2F Chip Capacitor|GRM31CR71H225KA88L|Murata|
|C11, 12|12 pF Chip Capacitors|ATC600F120JT250XT|ATC|
|C13|8.2 pF Chip Capacitor|ATC600F8R2BT250XT|ATC|
|C14|20 pF Chip Capacitor|ATC600F200JT250XT|ATC|
|C15|2 pF Chip Capacitor|ATC600F2R0BT250XT|ATC|
|C17|47 pF Chip Capacitor|ATC600F470JT250XT|ATC|
|J1|3--pin Header|22-28-8360|Molex|
|L1|2.55 nH Inductor|0906-3JLC|Coilcraft|
|L2|3.85 nH Inductor|0906-4JLC|Coilcraft|
|L3|22 nH Inductor|0908SQ22N|Coilcraft|
|L4, L5|17 nH Inductors|0908SQ17N|Coilcraft|
|L6|1.65 nH Inductor|0906-2JLC|Coilcraft|
|L7|8.1 nH Inductor|0908SQ8R1N|Coilcraft|
|R1|22, 1/10 W Chip Resistor|RR1220Q-220-D|Susumu|
|Q1|RF Power LDMOS Transistor|AFT09MS007N|Freescale|
|PCB|Shengyi S1000-2, 0.020,r= 4.8|D49947|MTL|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

14 

**==> picture [352 x 669] intentionally omitted <==**

**----- Start of picture text -----**<br>
i o<br>i<br>RF<br>OUTPUT<br>Z22<br>C16<br>Z21<br>C15<br>Z20<br>L7<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>      <br>Z19<br>VSUPPLY C14 0.049 0.049 0.046 0.046 0.046 0.046 0.034<br>Description<br>      <br>C7 Z18 0.075 0.279 0.032 0.195 0.089 0.046 0.060<br>C8 L6<br>C9 Z17 C13<br>Microstrip Z16 Z17 Z18 Z19 Z20 Z21 Z22<br>C10 Z16<br>Z15<br>L4 L5 C12<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>C17 Z14 C11       <br>0.300 0.300 0.146 0.146 0.170 0.170 0.170<br>Z13 Description<br>      <br>Z12<br>0.121 0.031 0.070 0.070 0.138 0.055 0.055<br>Z11<br>Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15<br>R1 Z10<br>C5 Z9<br>Z8<br>C4<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>L3        <br>Z7<br>C6 C3<br>0.034 0.046 0.046 0.046 0.046 0.046 0.046 0.046<br>Description<br>Z6        <br>Z5<br>0.060 0.052 0.110 0.118 0.084 0.124 0.084 0.207<br>Figure 17. AFT09MS007NT1 UHF Broadband Reference Circuit Schematic — 450–520 MHz<br>BIAS L2<br>V<br>Z4<br>C2<br>Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8<br>Table 15. AFT09MS007NT1 UHF Broadband Reference Circuit Microstrips — 450–520 MHz<br>Z3<br>L1<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

15 

## **TYPICAL CHARACTERISTICS — 450–520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [276 x 174] intentionally omitted <==**

**----- Start of picture text -----**<br>
20 90<br>VDD = 7.5 Vdc<br>19 Pin = 0.25 W 80<br>IDQ = 150 mA<br>18 a || | | | 70<br>D<br>17 60<br>eee ae<br>16 50<br>ee<br>15 | eTN| EWN G si ps 10<br>14 9<br>| Lat | | tet |<br>13 Pee RE NN Pout 8<br>12 P| | | ft | ft tt 7<br>440 450 460 470 480 490 500 510 520 530<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 18. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 7.5 V** 

**==> picture [451 x 380] intentionally omitted <==**

**----- Start of picture text -----**<br>
16<br>f = 485 MHz<br>8<br>14 V DD  = 7.5 Vdc, P in  = 0.25 W f = 485 MHz<br>7<br>12 Sor VDD = 7.5 Vdc, Pin = 0.1 W 7.) 6 Ae<br>10 5 VDD = 7.5 Vdc<br>Pin = 0.25 W<br>8 --+-- 7a 4 | VT<br>3 VDD = 7.5 Vdc<br>6 Pin = 0.1 W<br>pf ttt yyy)(/\_| Detail A 2 SRLe<br>4<br>oe 1 4A<br>2 P| | | vy 0 EP arannl<br>0 1 2 3 4<br>0 | [|Pri| : |<br>0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 19. Output Power versus Gate--Source Voltage<br>19 80<br>f = 520 MHz D<br>18 60<br>CPA r T<br>17 40<br>C 485 MHz ATT 520 MHz<br>VDD = 7.5 Vdc<br>16 485 MHz IDQ = 150 mA 20<br>450 MHz<br>15 i OS | 12<br>520 MHz Pout<br>14 450 MHz 8<br>13 S E 485 MHz Si 4<br>450 MHz Gps<br>12 e qse NIITNT 0<br>0.03 0.1 1<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 20. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

16 

**==> picture [381 x 657] intentionally omitted <==**

**----- Start of picture text -----**<br>
450–520 MHz UHF BROADBAND REFERENCE CIRCUIT<br>x ° rag “s ae Q,<br>Cy [“3][ $]<br>GC % € =pew eee f = 530 MHz - Ss<br>Zo = 10 <br>hy EFS Zsource SOS Che y<br>Wee SK Corry<br>LL FPR XxX eet PER<br>yi ‘fofafo) pareRENaeatatnctSS TTYy<br>f = 450 MHz B E REoe KRSOS OEEeetcuss<br>lele/ f Ks) LEE LR SSL SA) CCE<br>BLToh Bel EK f = 530 MHz<br>At Bieh thy ER NOS eosencs<br>opelSle/ 1 BY SLIP NG ESSE<br>a PH oH Zload Ca Ge ee<br>2 A Ee a pee etieeters<br>é] fe] Ri sHee ia ae [ROSES]<br>fe a f = 450 MHz Bee<br>zfs Saueasseeeesers; LEE [7][ PROBLY]<br>3 C e a eee<br>{| Bpes e eedeat e rPEERED RS<br>ale y aetna LE RERE<br>eeee! FE aestrance conronen (Br) ot copiers coh)<br>a<br>al Hite eateeee }eo erertrere aetetr: sate!<br>tele eater eetuectes Weuee (ie) eee aes<br>$\5 “rae22eeaekeeeaes AA R SS SeeR<br>VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7.5 W<br>f Zsource Zload<br>MHz  <br>450 0.45 + j2.46 1.56 + j1.05<br>460 0.40 + j2.37 1.52 + j1.24<br>470 0.40 + j2.97 1.46 + j1.51<br>480 0.38 + j3.56 1.39 + j1.71<br>490 0.41 + j4.16 1.35 + j2.06<br>500 0.51 + j4.79 1.34 + j2.06<br>510 0.70 + j5.54 1.37 + j2.30<br>520 0.93 + j6.44 1.40 + j 2.50<br>530 1.14 + j7.56 1.42 + j2.62<br>7<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50  50 <br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 21. UHF Broadband Series Equivalent Source and Load Impedance — 450–520 MHz** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

17 

## **760–860 MHz BROADBAND REFERENCE CIRCUIT** 

|**Table 16. 760–860 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 16. 760–860 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 16. 760–860 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 16. 760–860 MHz Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 150 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>760<br>0.20<br>15.3<br>48.1<br>7.0<br>810<br>0.16<br>16.3<br>54.1<br>7.0<br>860<br>0.21<br>15.1<br>59.5<br>7.0<br>~~——————~~||||
|**Table 17. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**|**Pin**|||
|**(MHz)**<br>**Type**<br>**VSWR**|**(W)**<br>**Test Voltage, VDD**||**Result**|
|810<br>CW<br>> 65:1 at all|0.5<br>9.0||No Device|
|Phase Angles|(3 dB Overdrive)||Degradation|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

18 

## **760–860 MHz BROADBAND REFERENCE CIRCUIT** 

**==> picture [411 x 216] intentionally omitted <==**

**----- Start of picture text -----**<br>
VGG GND VDD<br>O ° {2 f e fe | O ©<br>C1 C8 J1 C16<br>o) C9<br>Sora) | fy B1 p l B2 it<br>3 AFT09MS007N Rev. 1 Le<br>C15<br>C2<br>3 O C4 R1 OO O re)<br>© [LLB oo} FF loo 4 L1 C13 J } ig Gti fe<br>O O Sb o000ga] [=| |oo — || Co °<br>O O e) | 00 a y Qagq000T0O O )<br>C6<br>fs) O O — loro ik | ome) 5<br>fo) OO00°0 | 1 — C11 o0°0 5<br>Q1<br>C3 C10 C12 C14<br>“Scoo t C5 C7 O<br>3 ( LJ] A = ] petro<br>oOO00SbD O SS OOOO<br>“Ze fol f o [oo so ooosbogse °<br>D55295<br>**----- End of picture text -----**<br>


**Figure 22. AFT09MS007NR1 Broadband Reference Circuit Component Layout — 760–860 MHz** 

**Table 18. AFT09MS007NR1 Broadband Reference Circuit Component Designations and Values — 760–860 MHz** 

|**Part**<br>~~ef~~|**Description**<br>~~ef~~|**Part Number**<br>~~ef~~|**Manufacturer**<br>~~ef~~|
|---|---|---|---|
|B1, B2|RF Beads|2743019447|Fair-Rite|
|C1|10 pF Chip Capacitor|GQM2195C2E100FB15|Murata|
|C2|3.9 pF Chip Capacitor|GQM2195C2E3R9BB15|Murata|
|C3|7.5 pF Chip Capacitor|GQM2195C2E7R5BB15|Murata|
|C4, C13, C16|100 pF Chip Capacitors|GQM2195C2E101GB15|Murata|
|C5|8.2 pF Chip Capacitor|GQM2195C2E8R2BB15|Murata|
|C6, C7|20 pF Chip Capacitors|GQM2195C2E200GB15|Murata|
|C8|1F Chip Capacitor|GRM31MR71H105KA88L|Murata|
|C9|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|C10, C11|12 pF Chip Capacitors|GQM2195C2E120FB15|Murata|
|C12|5.1 pF Chip Capacitor|GQM2195C2E5R1BB15|Murata|
|C14|4.7 pF Chip Capacitor|GQM2195C2E4R7BB15|Murata|
|C15|3.9 pF Chip Capacitor|GQM2195C2E3R9BB15|Murata|
|J1|3--pin Header|22-28-8360|Molex|
|L1|22 nH Inductor|0908SQ-22NJL|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT09MS007N|Freescale|
|R1|200Chip Resistor|CRCW0805200RJNEA|Vishay|
|PCB|Shengyi S1000--2, 0.020,r= 4.8|D55295|MTL|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

19 

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**----- Start of picture text -----**<br>
:<br>: i<br>a<br>RF<br>OUTPUT<br>Z19<br>Z18 C16 Microstrip Microstrip Microstrip Microstrip Microstrip<br>C15     <br>0.180 0.034 0.034 0.034 0.050<br>Description<br>Z17<br>C14     <br>0.115 0.160 0.360 0.105 0.150<br>Z16<br>Z15<br>VSUPPLY C12 Microstrip Z15 Z16 Z17 Z18 Z19 * Line length includes microstrip bends.<br>C9 Z14<br>C11<br>B2 Z13<br>C13 C10<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>      <br>L1 Z10 Z12<br>Description 0.250 0.034 0.034 0.180 0.180 0.180 0.180<br>Z11       <br>0.027 0.066 0.110 0.027 0.163 0.068 0.077<br>Z8<br>R1 Z9<br>Microstrip Z8 Z9 Z10 Z11 Z12 Z13 Z14<br>C4 Z7<br>C6 C7<br>B1 Z6<br>C5<br>C8<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>      <br>Z5 0.050 0.034 0.034 0.034 0.250 0.250 0.250<br>BIAS Description<br>V Z4       <br>C3 Figure 23. AFT09MS007NT1 Broadband Reference Circuit Schematic — 760–860 MHz 0.150 0.120 0.460 0.073 0.120 0.128 0.145<br>Z3<br>C2<br>Z2<br>Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7<br>Table 19. AFT09MS007NT1 Broadband Reference Circuit Microstrips — 760–860 MHz<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

20 

## **TYPICAL CHARACTERISTICS — 760–860 MHz BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
19 65<br>D<br>18 Pf [| | LE ft] 60<br>17 PF | fF] fT ft dT 55<br>16 50<br>| be | ft ft ft<br>15 i eee  ee 45<br>Gps<br>14 a ee eeeee 10<br>13 ee eee 9<br>12 ee 8<br>Pout<br>11 a ee ee ee ee 7<br>VDD = 7.5 Vdc, Pin = 0.25 W, IDQ = 150 mA<br>10 eeee ee 6<br>740 760 780 800 820 840 860 880<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 24. Power Gain, Output Power and Drain Efficiency versus Frequency at a Constant Input Power — 7.5 V** 

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**----- Start of picture text -----**<br>
14<br>f = 810 MHz<br>7<br>12 f = 810 MHz<br>VDD = 7.5 Vdc, Pin = 0.25 W 6<br>10 eee<br>| 5 P| | | f/f |<br>Detail A VDD = 7.5 Vdc, Pin = 0.1 W<br>8 4<br>VDD = 7.5 Vdc<br>3<br>6 P in = 0.25 W<br>2<br>4 en aa 1 A VDD = 7.5 Vdc<br>Pin = 0.1 W<br>2 ASE] Oo 0  EOF"<br>0 0.5 1 1.5 2 2.5 3 3.5<br>0 ea<br>0 1 2 3 4 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 25. Output Power versus Gate--Source Voltage<br>21 75<br>2019 f = 860 MHz Aare  D 6045<br>760 MHz<br>18 aS 810 MHz VDD = 7.5 Vdc 30<br>IDQ = 150 mA<br>17 ee +7 L_| 15<br>810 MHz<br>860 MHz<br>16 fee7 TTT 12<br>Pout<br>15 9<br>760 MHz<br>14 6<br>860 MHz 810 MHz Gps<br>13 3<br>760 MHz<br>12 7A tL r T T 0<br>0 0.1 0.2 0.3 0.4 0.5 0.6<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 26. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

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## **760–860 MHz BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
XP, . LYE <> OSES EEE [Ty<br>LI OBS LRLLLED CX SOI Zo = 2  Sony<br>RRORLE<br>Def SKK f = 860 MHz SSO TETH<br>MY ELEC, SSS ETE<br>SL EERREEREDRL K Oe LE<br>lel PELR Zsource AE oS SK EE<br>3BFS157 fel I LGtLBETELELTTPEPE ADDKDELETIREGOELPEL INLLILLE LILOKE RESOSOSSOK SLTSS EL<br>SPS]Sl_/ |&f EEAyLY SEERERTL sireRRAPATALSL f = 760 MHz et ec| PEERSMETPeTOL ILLLSKORE REILROK f = 860 MHz KD LRPSOS SSSSESE<br>£] fe) filFlsteeredSPARE ETP LIRA 7 LT LEK TA) CREEKS<br>Zload<br>ets] Ur Pre Eee TA PRR<br>St] | AEA AT DA AEE OS<br>; ] HAREAR PPT<br>Hh. seeeaiezeiiaiiirsi/Meme peeee eset eeee eee<br>Sb sue onee otis ME Oey a WE RESP e ee<br>f = 760 MHz<br>**----- End of picture text -----**<br>


VDD = 7.5 Vdc, IDQ = 150 mA, Pout = 7 W 

||||||**f**|||||**Zsource**|**Zsource**||**Zload**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**MHz**|||||||||||||
||||||760||||0.77 + j0.62||0.77 + j0.62|1.65 – j0.04||||||
||||||770||||0.81 + j0.71||0.81 + j0.71|1.70 + j0.10||||||
||||||780||||0.81 + j0.79||0.81 + j0.79|1.72 + j0.24||||||
||||||790||||0.82 + j0.85||0.82 + j0.85|1.74 + j0.36||||||
||||||800||||0.84 + j0.92||0.84 + j0.92|1.77 + j0.49||||||
||||||810||||0.85 + j0.98||0.85 + j0.98|1.81 + j0.61||||||
||||||820||||0.88 + j1.02||0.88 + j1.02|1.84 + j0.69||||||
||||||830||||0.89 + j1.07||0.89 + j1.07|1.87 + 0.79||||||
||||||840||||0.91 + 1.13||0.91 + 1.13|1.91 + j0.90||||||
||||||850||||0.91 + j1.19||0.91 + j1.19|1.93 + j0.99||||||
||||||860||||0.94 + j1.23||0.94 + j1.23|1.99 + j1.08||||||
|||||Zsource||=|Test circuit impedance as measured from||||Test circuit impedance as measured from|||||||
||||||||gate to ground.|||||||||||
|||||Zload||=|Test circuit impedance as measured from||||Test circuit impedance as measured from|||||||
||||||||drain to ground.|||||||||||
|||||Input||||||Device|||Output|||||
|50||||Matching<br>Network||||||Under<br>Test|||Matching<br>Network||||50|
|||||||||||||||||||
|||||||||||||||||||
||||||||||**Zsource**||**Zload**|||||||



**Figure 27. Broadband Series Equivalent Source and Load Impedance — 760–860 MHz** 

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RF Device Data Freescale Semiconductor, Inc. 

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0.28<br>7.11<br>0.165<br>4.91<br>—<br>os<br>0.089 0.155<br>2.26 3.94<br>Solder Pad with<br>Thermal Via Ree<br>Structure<br>0.085 Inches<br>2.16 (mm)<br>_ io<br>**----- End of picture text -----**<br>


**Figure 28. PCB Pad Layout for PLD--1.5W** 

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**----- Start of picture text -----**<br>
A9M07<br>N B<br>YYWW<br>**----- End of picture text -----**<br>


**Figure 29. Product Marking** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

23 

## **PACKAGE DIMENSIONS** 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

24 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

25 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

26 

## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following documents, software and tools to aid your design process. 

## **Application Notes** 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

- .s2p File 

## **Development Tools** 

- Printed Circuit Boards 

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|June 2013|<br>Initial Release of Data Sheet|
|1|Apr. 2014|<br>Wideband Performance tables 8, 12, 16: updated to include Pinfor all reference circuits, pp. 1, 8, 13, 18<br><br>Tape and Reel information: corrected tape width information from 13--inch reel to 7--inch reel to reflect<br>actual reel size, p. 1<br><br>Maximum Ratings table: changed Total Device Dissipation value from 182 to 114 W to reflect performance<br>at 150C, p. 2<br><br>Fig. 4, MTTF versus Junction Temperature – CW: MTTF end temperature on graph changed to match<br>maximum operating junction temperature, p. 4<br><br>Table 6, Test Circuit Component Designations and Values: updated PCB description to reflect most current<br>board specifications from Rogers, p. 5<br><br>Added 350–470 MHz UHF Broadband Reference Circuit as follows:<br>-- Wideband Performance table, p. 1<br>-- Table 8, UHF Broadband Performance, p. 8<br>-- Table 9, Load Mismatch/Ruggedness, p. 8<br>-- Fig. 10, UHF Broadband Reference Circuit Component Layout, p. 9<br>-- Table 10, UHF Broadband Reference Circuit Component Designations and Values, p. 9<br>-- Fig. 11, UHF Broadband Reference Circuit Schematic, p. 10<br>-- Table 11, UHF Broadband Reference Circuit Microstrips, p. 10<br>-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input<br>Power, p. 11<br>-- Fig. 13, Output Power versus Gate--Source Voltage, p. 11<br>-- Fig. 14, Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency, p. 11<br>-- Fig. 15, VHF Broadband Series Equivalent Source and Load Impedance, p. 12<br><br>Table 12. Load Mismatch/Ruggedness table: changed Test Voltage from 9.0 to 10.8 Vdc to reflect true<br>capability of the circuit, p. 13|



**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

27 

## _**How to Reach Us:**_ 

**Home Page:** freescale.com 

**Web Support:** freescale.com/support 

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013–2014 Freescale Semiconductor, Inc. 

**AFT09MS007NT1** 

RF Device Data Freescale Semiconductor, Inc. 

Document Number: AFT09MS007N 28Rev. 1, 4/2014
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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