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AFT05MS031GNR1
RF FET Transistor, 40 V, 294 W, 136 MHz, 520 MHz, TO-270
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:40V; Continuous Drain Current Id:-; Power Dissipation Pd:294W; Operating Frequency Min:136MHz; Operating Frequency Max:520MHz; RF Transistor Case:TO-270; No. o
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 2Pins
- Channel Type: N Channel
- Product Range: AFT05MS031GN
- Power Dissipation: 294W
- Transistor Mounting: Surface Mount
- Transistor Case Style: TO-270
- Operating Frequency Max: 520MHz
- Operating Frequency Min: 136MHz
- Drain Source Voltage Vds: 40V
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 500 |
| Price | 10.58 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: AFT05MS031N Rev. 1, 4/2013
## **RF Power LDMOS Transistors** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment.
## **Typical Performance:** (13.6 Vdc, TA = 25C, CW)
|**Frequency**<br>**(MHz)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**P1dB**<br>**(W)**|
|---|---|---|---|
|136--174 **(1,4)**|23.2|62.0|31|
|380--450 **(2,4)**|18.3|64.1|31|
|450--520 **(3,4)**|17.7|62.0|31|
|520 **(5)**|17.7|71.4|33|
## **Load Mismatch/Ruggedness**
|**Frequency**<br>**(MHz)**|**Signal**<br>**Type**|**VSWR**|**Pin**<br>**(W)**|**Test**<br>**Voltage**|**Result**|
|---|---|---|---|---|---|
|155 **(1)**|CW|>65:1 at all<br>Phase Angles|0.55<br>(3 dB Overdrive)|17|No Device<br>Degradation|
|420 **(2)**|||1.6<br>(3 dB Overdrive)|||
|490 **(3)**|||2.0<br>(3 dB Overdrive)|||
|520 **(5)**|||1.1<br>(3 dB Overdrive)|||
## **AFT05MS031NR1 AFT05MS031GNR1** ~~a~~
**136--520 MHz, 31 W, 13.6 V WIDEBAND RF POWER LDMOS TRANSISTORS**
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TO--270--2<br>PLASTIC<br>AFT05MS031NR1<br>TO--270--2 GULL<br>PLASTIC<br>AFT05MS031GNR1<br>**----- End of picture text -----**<br>
1. Measured in 136--174 MHz VHF broadband reference circuit.
2. Measured in 380--450 MHz UHF broadband reference circuit.
3. Measured in 450--520 MHz UHF broadband reference circuit.
4. The values shown are the minimum measured performance numbers across the indicated frequency range.
5. Measured in 520 MHz narrowband test circuit.
## **Features**
- Characterized for Operation from 136 to 520 MHz
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
**==> picture [155 x 94] intentionally omitted <==**
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Gate Drain<br>| __|<br>(Top View)<br>Note: The backside of the package is the<br>source terminal for the transistor.<br>**----- End of picture text -----**<br>
- Integrated Stability Enhancements
- Wideband — Full Power Across the Band:
**Figure 1. Pin Connections**
- 136--174 MHz
- 380--450 MHz
- 450--520 MHz
- 225C Capable Plastic Package
- Exceptional Thermal Performance
- High Linearity for: TETRA, SSB, LTE
- Cost--effective Over--molded Plastic Packaging
- In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
## **Typical Applications**
- Output Stage VHF Band Mobile Radio
- Output Stage UHF Band Mobile Radio
Freescale Semiconductor, Inc., 2012--2013. All rights reserved. **AFT05MS031NR1 AFT05MS031GNR1** ~~a = freescale~~
**AFT05MS031NR1 AFT05MS031GNR1** Airfast 1
RF Device Data Freescale Semiconductor, Inc.
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**|||**Symbol**<br>**Value**||**Unit**|
|Drain--Source Voltage|||VDSS<br>--0.5, +40||Vdc|
|Gate--Source Voltage|||VGS<br>--6.0, +12||Vdc|
|Operating Voltage|||VDD<br>17, +0||Vdc|
|Storage Temperature Range|||Tstg<br>--65 to +150||C|
|Case Operating Temperature Range|||TC<br>--40 to +150||C|
|Operating Junction Temperature Range **(1,2)**|||TJ<br>--40 to +225||C|
|Total Device Dissipation @ TC= 25C|||PD<br>294||W|
|Derate above 25C|||1.47||W/C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 79C, 31 W CW, 13.6 Vdc, IDQ= 10 mA, 520 MHz<br>RJC<br>0.67<br>C/W<br>~~I~~||||||
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>A, passes 100 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~a~~||||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)||||||
|**Characteristic**||**Symbol**|**Min**<br>**Typ**<br>**Max**||**Unit**|
|**Off Characteristics**||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 40 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 13.6 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>600<br>nAdc<br>~~pr~~||||||
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 115Adc)<br>VGS(th)<br>1.6<br>2.1<br>2.6<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 1.2 Adc)<br>VDS(on)<br>—<br>0.13<br>—<br>Vdc<br>Forward Transconductance<br>(VDS= 10 Vdc, ID= 7.5 Adc)<br>gfs<br>—<br>5.8<br>—<br>S<br>~~ae~~||||||
|1. Continuous use at maximum temperature will affect MTTF.||||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF||||||
|calculators by product.||||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
|**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted)A = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)**(continued)**|**(continued)**|**(continued)**|
|---|---|---|
|**Characteristic**<br>**Symbol**||**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|**Dynamic Characteristics**|||
|Reverse Transfer Capacitance<br>Crss||—<br>1.6<br>—<br>pF|
|(VDS= 13.6 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||
|Output Capacitance<br>Coss||—<br>49.5<br>—<br>pF|
|(VDS= 13.6 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||
|Input Capacitance<br>Ciss||—<br>109<br>—<br>pF|
|(VDS= 13.6 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)<br>**Functional Tests (1)** (In Freescale Narrowband Test Fixture, 50 ohm system) VDD= 13.6 Vdc, IDQ= 10 mA, Pout= 31 W, f = 520 MHz<br>Common--Source Amplifier Power Gain<br>Gps<br>16.5<br>17.7<br>19.0<br>dB<br>Drain Efficiency<br>D<br>70.0<br>71.4<br>—<br>%<br>**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system) IDQ= 10 mA<br>**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>520<br>CW<br>>65:1 at all Phase Angles<br>1.1<br>(3 dB Overdrive)<br>17<br>No Device Degradation<br>~~_—————~~<br>~~ee~~<br>~~a~~|||
|1. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull|||
|wing (GN) parts.|||
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
3
## **TYPICAL CHARACTERISTICS**
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1000<br>a Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>Ciss<br>100<br>—<———————————————————ee Coss<br>10 a a ee eee<br>a ee es ee<br>a Crss<br>1<br>0 4 8 12 16 20<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>C, CAPACITANCE (pF)<br>**----- End of picture text -----**<br>
**Figure 2. Capacitance versus Drain--Source Voltage**
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7<br>ee TA = 25C VGS = 4.25 Vdc<br>6 ———<br>45 SS el 4 Vdc<br>3.75 Vdc<br>3<br>3.5 Vdc<br>Y/<br>2<br>3.25 Vdc<br>1<br>2.75 Vdc 3 Vdc<br>0<br>0 4 8 12 16 20<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>, DRAIN CURRENT (AMPS)<br>IDS<br>**----- End of picture text -----**<br>
**Figure 3. Drain Current versus Drain--Source Voltage**
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10 [9]<br>=== === = SS SS<br>i<br>VDD = 13.6 Vdc<br>10 [8] | ft | ff td ff<br>ID = 2.5 Amps<br>SSZ7™-.N aEee eee eS<br>10 [7] 3.2 Amps<br>LSS ee, EL<br>pf ESS Ht HT<br>10 [6]<br>pj | | | | Se td<br>3.9 Amps<br>a ee ee a<br>10 [5]<br>ptt ft ff | td<br>SSSee<br>ee<br>10 [4] Pp tt | | te te tt tT tT Tt ee ee ee<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 4. MTTF versus Junction Temperature -- CW**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
4
**520 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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C1<br>C7 C13 C14<br>© , an ccce% 0000000, £ £ o aap pooceSbooc0000000%<br>° EI ° of KH °<br>o| | ° ° B3 Ld °<br>°° C3 B1 g C16 in B2 °<br>o}oL IpTt] LL 4 °° @ ) B s 8 °°<br>® 0 C2 6600000000 C4 0 0 ° laa: C8 ° ° a | ° o000000 C18 [ 500 ®<br>C5 ° ° = °\/° C9 O09 O0000}° |, L2 °° C11<br>©00 0 /000000000 0 000 L1 =) YY C15 ©00000000000\00000<br>C T T a = ‘J<br>e s | | oO [4<br>000050000000 000000 CL I S) ©0000000000000<br>C6 00000000 C10 0000 00000002 C12 °°°°°<br>°°<br>°<br>><a“ee2 ® ® O o05000 —_R Rs°<br>=" f reescale”semiconductor (4 ) AFT05MS031N C17 @<br>Rev. 1<br>CUT OUT AREA<br>**----- End of picture text -----**<br>
**Figure 5. AFT05MS031NR1 Narrowband Test Circuit Component Layout — 520 MHz**
**Table 6. AFT05MS031NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2, B3|RF Beads, Long|2743021447|Fair--Rite|
|C1|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C2, C14|0.01F Chip Capacitors|C0805C103K5RAC|Kemet|
|C3, C13|0.1F Chip Capacitors|CDR33BX104AKWS|Kemet|
|C4|200 pF Chip Capacitor|ATC100B201JT300XT|ATC|
|C5|6.2 pF Chip Capacitor|ATC100B6R2JT500XT|ATC|
|C6|3.9 pF Chip Capacitor|ATC100B3R9JT500XT|ATC|
|C7, C16|180 pF Chip Capacitors|ATC100B181JT200XT|ATC|
|C8|10 pF Chip Capacitor|ATC100B100JT500XT|ATC|
|C9, C10, C11, C12|36 pF Chip Capacitors|ATC100B360JT500XT|ATC|
|C15|27 pF Chip Capacitor|ATC100B270JT500XT|ATC|
|C17|7.5 pF Chip Capacitor|ATC100B7R5JT500XT|ATC|
|C18|470F, 63 V Electrolytic Capacitor|SME63V471M12X25LL|United Chemi--Con|
|L1|43 nH, 10 Turn Inductor|B10TJLC|Coilcraft|
|L2|56 nH Inductor|1812SMS--56NJLC|Coilcraft|
|PCB|0.030,r = 2.55|AD255A|Arlon|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
5
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**----- Start of picture text -----**<br>
RF<br>OUTPUT<br>DS Z14<br>V<br>C11<br>+ C18 Z13<br>C17<br>C14<br>Z12<br>C13 C15<br>Microstrip Microstrip<br>C16 Microstrip Microstrip Microstrip Microstrip Microstrip<br>L2 Z11 0.082 0.082 <br>0.270 0.275 0.275 0.082 0.082<br>Description<br> <br>Z10 <br>C12 0.190 0.257 0.145 0.091 0.1322 0.1420 0.315<br>Z9<br>Microstrip Z8 Z9 Z10 Z11 Z12* Z13* Z14<br>C9<br>Z8<br>C8<br>Z7<br>C10<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z6 <br>L1 0.082 0.082 0.082 0.060 0.082 0.082 0.082<br>Description<br>Z5 <br>C7 Z4<br>0.199 0.017 0.670 0.560 0.370 0.079 0.352<br>Z3<br>C4 C6<br>Figure 6. AFT05MS031NR1 Narrowband Test Circuit Schematic — 520 MHz<br>C3 Z2<br>Microstrip Z1 Z2 Z3* Z4* Z5* Z6 Z7 * Line length includes microstrip bends<br>Table 7. AFT05MS031NR1 Narrowband Test Circuit Microstrips — 520 MHz<br>C2 C5<br>+ C1 Z1<br>RF<br>INPUT<br>GS<br>V<br>**----- End of picture text -----**<br>
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
6
**TYPICAL CHARACTERISTICS — 520 MHz**
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50<br>45 V DD = 13.6 Vdc, P in = 0.6 W tT<br>40 V DD = 13.6 Vdc, P in = 0.3 W SO<br>35 VDD = 12.5 Vdc, Pin = 0.6 W<br>30<br>25 en<br>20<br>TY/// [fe] Aa<br>VDD = 12.5 Vdc<br>15<br>P in = 0.3 W<br>10 4a<br>ny A/a —_<br>5 a ae<br>f = 520 MHz<br>0<br>AP [Ae]<br>0 1 2 3 4 5 6<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>**----- End of picture text -----**<br>
**Figure 7. Output Power versus Gate--Source Voltage**
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**----- Start of picture text -----**<br>
20 90<br>19 VDD = 13.6 Vdc, IDQ = 10 mA 80<br>f = 520 MHz<br>D<br>18 70<br>ee ieee<br>aval coe<br>17 60<br>NN<br>16 CO7 50<br>Gps<br>15 40<br>PA ZT<br>14 Pout 30<br>PIV |[cer<br>13 20<br>i [ea] |<br>12 CCA 10<br>11 a 0<br>0.03 0.1 1 3<br>Pin, INPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>
**Figure 8. Power Gain, Output Power and Drain Efficiency versus Input Power**
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**----- Start of picture text -----**<br>
VDD = 13.6 Vdc, IDQ = 10 mA, Pout = 31 W Avg.<br>f Zsource Zload<br>MHz <br>520 0.72 + j1.77 1.54 + j0.80<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>i 4 ne i<br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
7
## **136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**
|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136--174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|---|
|VDD= 13.6 Volts, IDQ= 100 mA, TA= 25C, CW||||||
|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**P1dB**<br>**(W)**<br>136<br>25.0<br>64.0<br>31<br>155<br>23.2<br>63.0<br>31<br>174<br>23.2<br>62.0<br>31<br>~~—————~~||||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||||
|**Frequency**<br>**Signal**||**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**||**(W)**|**Test Voltage, VDD**||**Result**|
|155<br>CW<br>>65:1 at all||0.55|17||No Device|
|Phase Angles||(3 dB Overdrive)|||Degradation|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
8
## **136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**
|**136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**|**136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**||
|---|---|---|
|C1<br>C2<br>L1<br>C3<br>C4<br>L2<br>R1<br>B1<br>C14<br>J1<br>C16<br>C17<br>C11<br>C12 C13<br>B2<br>L3<br>C15<br>C10<br>L6<br>C6<br>C7<br>C5<br>L4<br>L5<br>C8<br>C9<br>Q1<br>R2<br>D37515<br>°~~= ~~0<br>of~~15%~~<br>5<br>~~JH ~~O<br>0<br>~~=~~<br>0<br>0 ~~ols~~<br>0<br>O<br>O<br>—<br>O<br>O<br>~~Wb~~ ~~@~~ =|~~) LE ~~ee |~~)FC~~<br>o(F)d J]<br>O<br>6<br>6<br>000900090000<br>O<br>O<br>O<br>ql]<br>O<br>O<br>O [oo#fre~~escale’~~©<br>O<br>O<br>p<br>|<br>te~~na~~<br>im<br>e<br>ome<br>000 0]<br>kK<br>5<br>SP<br>°|<br>Se<br>LS<br>IES O<br>o} KY<br>SS O<br>OSS O<br>Oly<br>lo oo 00<br>F~~la~~<br>ol Ff<br>| Ir]<br>fo<br>~~FT~~<br>| |<br>Ic<br>Ie<br>O<br>O a5<br>5se ~~~ ~~**ome)**<br>~~=~~<br>OSis O<br>oy<br>°<br>Oo] 4<br>0000<br>s~~oso~~ oo<br>Se fo<br>°<br>O<br>°<br>O<br>5<br>0 4)<br>of<br>|LET]<br>fo ea<br>5<br>°<br>O<br>0<br>°<br>°<br>ol<br>~~TI~~<br>OCO OOO00000000~~00~~<br>D000 D00OD0 OO ~~ao~~)|||
|**Figure 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Layout — 136--174 MHz**|||
|**Table 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Designations and Values — 136--174 MHz**|**nations and Values — 136--174 MHz**|**nations and Values — 136--174 MHz**|
|**Part**<br>**Description**<br>**Part Number**<br>**Manufacturer**<br>~~eG~~|||
|B1<br>Low Current Ferrite Bead<br>2508051107Y0<br>Fair-Rite<br>~~GO~~|||
|B2<br>High Current Ferrite Bead<br>2518065007Y6<br>Fair-Rite<br>~~GO~~|||
|C1<br>68 pF Chip Capacitor<br>ATC600F680JT250XT<br>ATC<br>~~GO~~|||
|C2<br>47 pF Chip Capacitor<br>ATC600F470BT250XT<br>ATC<br>C3, C4, C6, C7<br>100 pF Chip Capacitors<br>ATC600F101JT250XT<br>ATC<br>C5<br>20 pF Chip Capacitor<br>ATC600F200JT250XT<br>ATC<br>C8, C9<br>56 pF Chip Capacitors<br>ATC600F560JT250XT<br>ATC<br>C10<br>27 pF Chip Capacitor<br>ATC600F270JT250XT<br>ATC<br>C11<br>0.1F Chip Capacitor<br>GRM21BR71H104KA01B<br>Murata<br>C12<br>1F Chip Capacitor<br>GRM21BR71H105KA12L<br>Murata<br>C13, C14, C15<br>240 pF Chip Capacitors<br>ATC600F241JT250XT<br>ATC<br>C16, C17<br>10F Chip Capacitors<br>GRM31CR61H106KA12L<br>Murata<br>J1<br>3 Pin Connector<br>AMP-9-146305-0<br>TE Connectivity<br>L1<br>19 nH Inductor<br>0806SQ--19NGLC<br>Coilcraft<br>L2<br>6.9 nH Inductor<br>0807SQ--6N9GLC<br>Coilcraft<br>L3<br>27 nH Inductor<br>0908SQ--27NGLC<br>Coilcraft<br>L4<br>6 nH Inductor<br>0806SQ--6N0GLC<br>Coilcraft<br>L5<br>14 nH Inductor<br>0807SQ--14NGLC<br>Coilcraft<br>L6<br>10 nH Inductor<br>0807SQ--10NGLC<br>Coilcraft<br>Q1<br>RF Power LDMOS Transistor<br>AFT05MS031NR1<br>Freescale<br>R1<br>62, 1/4 W Chip Resistor<br>RG2012N-620-BT1<br>Susumu<br>R2<br>0, 1/4 W Chip Resistor<br>CWCR08050000Z0EA<br>Vishay<br>PCB<br>0.020,r = 4.9<br>S1000-2<br>Shengyi<br>~~(OO~~<br>~~neGO~~<br>~~ee(OO~~<br>~~nsGO~~<br>~~neGO~~<br>~~OO~~<br>~~neGO~~<br>~~neGO~~<br>~~GO~~<br>~~neOO~~<br>~~esOO~~<br>~~esOO~~<br>~~esOO~~<br>~~dG~~<br>~~reDG~~<br>~~reDG~~<br>~~edDG~~<br>~~eeGO~~<br>~~eeGO~~<br>~~a~~|||
**Table 10. AFT05MS031NR1 VHF Broadband Reference Circuit Component Designations and Values — 136--174 MHz**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
9
**==> picture [404 x 691] intentionally omitted <==**
**----- Start of picture text -----**<br>
- _<br>a<br>RF<br>OUTPUT<br>Z22<br>C12<br>Z21<br>C11<br>Z20<br>L6<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z19 <br>L5 Description 0.230 0.200 0.190 0.050 0.150 0.060 0.130 0.080<br> <br>Z18 C10 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034<br>C9<br>DS<br>V<br>Z17<br>C15 L4 Microstrip Z17 Z18 Z19 Z20 Z21 Z22 Z23 Z24<br>C14 Z16 C8<br>C13 C7<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z15 <br>C17<br>B2 L3 Z14 0.170 0.130 0.080 0.155 0.115 0.050 0.065 0.140<br>Description<br> <br>Z24 Z23 Z13<br>C6<br>0.240 0.034 0.034 0.240 0.240 0.240 0.034 0.034<br>Z12 Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16<br>B1 R1 Z9<br>Z11 Z10 Z8 p p p p p p p<br>C5 Z7<br>Microstri Microstri Microstri Microstri Microstri Microstri Microstri Microstrip<br>C16 R2 <br>Z6 0.060 0.120 0.057 0.120 0.075 0.431 0.309 0.020<br>Description<br> <br>GS L2<br>V<br>0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.240<br>Z5<br>C4<br>C3<br>Z4 Table 11. AFT05MS031NR1 VHF Broadband Reference Circuit Microstrips — 136--174 MHz Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8<br>L1<br>Z3<br>C2<br>Figure 11. AFT05MS031NR1 VHF Broadband Reference Circuit Schematic — 136--174 MHz<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
10
## **TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**
**==> picture [281 x 392] intentionally omitted <==**
**----- Start of picture text -----**<br>
22.6 76<br>22.5 V DD = 12.5 Vdc, P in = 0.2 W (Avg.) 74<br>IDQ = 100 mA<br>22.4 eeee ee 72<br>22.3 ee ee 70<br>22.2 | ~~olee ee |ee ee 68<br>D<br>22.1 a ee ee eee ee 66<br>21.922 PIN G ps 6436<br>21.8 a ee|es 33<br>21.7 Pout 30<br>21.6 Setes ee ee 27<br>130 140 150 160 170 180<br>f, FREQUENCY (MHz)<br>Figure 12. Power Gain, Drain Efficiency and Output Power versus<br>Frequency at a Constant Input Power — 12.5 V<br>23.1 74<br>23 VDD = 13.6 Vdc, Pin = 0.2 W (Avg.) 72<br>IDQ = 100 mA<br>22.9 - e eeeeee 70<br>22.8 a 68<br>22.7 a a eeees eeeee 66<br>D<br>22.6 Na ee eee ee 64<br>22.5 Gps 62<br>22.4 |Ane| CU EY 39<br>22.3 pot 36<br>22.2 es es ee eee Pout 33<br>22.1 ee 30<br>130 140 150 160 170 180<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT<br>out<br>P<br>POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 12. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 12.5 V**
**Figure 13. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 13.6 V**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
11
## **TYPICAL CHARACTERISTICS — 136--174 MHz VHF BROADBAND REFERENCE CIRCUIT**
**==> picture [454 x 397] intentionally omitted <==**
**----- Start of picture text -----**<br>
50<br>VDD = 13.6 Vdc, Pin = 0.2 W 25<br>40 VDD = 13.6 Vdc<br>VDD = 13.6 Vdc, Pin = 0.1 W 20 Pin = 0.2 W<br>VDD = 12.5 Vdc, Pin = 0.2 W<br>30 V DD = 12.5 Vdc 15 VDD = 12.5 Vdc<br>Pin = 0.1 W Pin = 0.2 W VDD = 12.5 Vdc<br>Pin = 0.1 W<br>10<br>20<br>iy Detail A pp VDD = 13.6 Vdc<br>5 Pin = 0.1 W<br>10<br>f = 155 MHz<br>OL f = 155 MHz 0 Lr<br>0 0.5 1 1.5 2 2.5 3 3.5<br>0<br>0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 14. Output Power versus Gate--Source Voltage<br>27 140 80<br>VDD = 13.6 Vdc, IDQ = 100 mA D<br>26 136 MHz 155 MHz 120 70<br>174 MHz<br>25 rrr 100 60<br>iw<br>ae<br>24 80 50<br>aR 136 MHz<br>23 60 40<br>Ae Gps 155 MHz Nee<br>22 174 MHz 136 MHz 40 30<br>Pout<br>21 wes il 20 20<br>Zi anil 174 MHz<br>155 MHz<br>20 ee ati 1 0 10<br>0.01 0.1 0.5<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>
**Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
12
**==> picture [421 x 672] intentionally omitted <==**
**----- Start of picture text -----**<br>
136--174 MHz VHF BROADBAND REFERENCE CIRCUIT<br>) 0.39 90<br>A AO oe © 80© 2.3570 2.39an<br>$2 pd ‘A. 222) aan as * ox<4<br>eae avnastnmm LPS A<br>hy<br>YS ViigeS8onSODSeeEsen TS Zsource PAY [S]<br>ef hBS, CS KG = hy<br>VLE bog SOK Oxy Zo = 5 Sk | Lect<br>f = 135 MHz f = 175 MHz<br>LL RE ASS TE me,<br>ALT OREE TSS f am,<br>ff OLE TES Re SOS S E Cony<br>eh | ALYs COLE RR QLRKE KE OE GREER,<br>bed TI LIP<br>Te} EPI SIR ONS SSSA THE<br>EL EOE PELE RETRO SSS CHT<br>Ras:do} bey!Urania§ LTRaaa eeeEERE CORILL ROT RRRRSS SlSIT KEE<br>1 Ayfy itiSe saseeisaci hey ii eePL em namelEL tiasROKSTAPLER LLLa, TERRES NSSSSS<br>AA ETAT PED IRE ROR eo<br>[f°oe eusueie pmmeneasumaanecaewer<br>[8 nce: mite manana remameneumenae<br>seeesiirieriiiiiri/eemeaeceeerit ee EEE) ERE ECs<br>9} ibssissstrsiiiiiti:eeesuennesesees SHatet aa Hsia<br>f = 175 MHz<br>[CECH] beerttto srr rs ent(-B}, on CONDUCTANCE comPONENT(& | < ee SS,<br>RE note cps Zload Sete OU peeenrt genearn<br>epeeneeceuaetcase<br>f = 135 MHz<br>ee ee E NS<br>sis<br>Nice S re e<br>A EaCP<br>VDD = 13.6 Vdc, IDQ = 100 mA, Pout = 31 W Avg.<br>f Zsource Zload<br>MHz <br>135 3.33 + j6.92 2.42 - j0.95<br>140 3.66 + j7.23 2.59 - j0.96<br>145 3.97 + j7.44 2.71 - j1.03<br>150 4.21 + j7.53 2.78 - j1.13<br>155 4.31 + j7.54 2.77 - j1.23<br>160 4.21 + j7.54 2.71 - j1.31<br>165 3.94 + j7.65 2.61 - j1.34<br>170 3.58 + j7.94 2.50 - j1.32<br>175 3.24 + j8.42 2.41 - j1.24<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 16. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
13
## **380--450 MHz UHF BROADBAND REFERENCE CIRCUIT**
|**Table 12. 380--450 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 380--450 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 380--450 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|(In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 13.6 Volts, IDQ= 100 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**P1dB**<br>**(W)**<br>380<br>18.7<br>64.1<br>31<br>420<br>18.6<br>67.0<br>31<br>450<br>18.3<br>68.1<br>31<br>~~—————~~||||
|**Table 13. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**<br>**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**||**Result**|
|420<br>CW<br>>65:1 at all<br>1.6|17||No Device|
|Phase Angles<br>(3 dB Overdrive)|||Degradation|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
14
## **380--450 MHz UHF BROADBAND REFERENCE CIRCUIT**
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**----- Start of picture text -----**<br>
VGS VDS<br>© L b C1 B1 O o C13 C14 C15 B2 O C12 o| Ld ©<br>OL 16 O = Do P E] jo<br>C17 J1 C16<br>AF] le G ) ol i =A 22 SAS= (+ ) 4 [Le<br>O O O O C6 * freescale © O C11 O I O<br>O 6 | |] [ov SOS Sen O O [| |p<br>L1 R1 L7<br>| eb io o | tt 5 of La 208 oR Jo «\;<br>O&S 5 C5* 0 | | SS L4 O C8 C10 \se<br>+ C2 O Qo 00 Yl l a o ETE<br>Ll} er e Q1 a o :<br>O 5 O L6 ©<br>O} |o Q O<br>C7<br>O XS O 4 C4* O a O RLY<br>L2<br>L3<br>° gS O Slo O rl L5 A\y SS O<br>° 0] So 5 O O OO O70 0 00 5) We °<br>C3 5 a of [ET] L_ | jo : ; 5 Z C9 °<br>O = © ° ° ol [J ;<br>C0000 0ODO0ODOCODOOCOODOCODOOCOOOCOO TNO NOO<br>* C4 and C5 are mounted vertically.<br>D37515<br>**----- End of picture text -----**<br>
**Figure 17. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 380--450 MHz**
**Table 14. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 380--450 MHz**
|**Part**<br>~~GG~~|**Description**<br>~~GG~~|**Part Number**<br>~~GG~~|**Manufacturer**<br>~~GG~~|
|---|---|---|---|
|B1<br>~~CO~~|Low Current Ferrite Bead<br>~~CO~~|2508051107Y0<br>~~CO~~|Fair--Rite<br>~~CO~~|
|B2<br>~~CO~~|High Current Ferrite Bead<br>~~CO~~|2518065007Y6<br>~~CO~~|Fair--Rite<br>~~CO~~|
|C1, C5<br>~~CO~~|56 pF Chip Capacitors<br>~~CO~~|ATC600F560JT250XT<br>~~CO~~|ATC<br>~~CO~~|
|C2<br>~~OO~~|3.9 pF Chip Capacitor<br>~~OO~~|ATC600F3R9BT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C3<br>~~OO~~<br>~~QO~~|18 pF Chip Capacitor<br>~~OO~~<br>~~QO~~|ATC600F180JT250XT<br>~~OO~~<br>~~QO~~|ATC<br>~~OO~~<br>~~QO~~|
|C4<br>~~GG~~|47 pF Chip Capacitor<br>~~GG~~|ATC600F470JT250XT<br>~~GG~~|ATC<br>~~GG~~|
|C6, C12, C15<br>~~GG~~<br>~~QC~~|240 pF Chip Capacitors<br>~~GG~~<br>~~QC~~|ATC600F241JT250XT<br>~~GG~~<br>~~QC~~|ATC<br>~~GG~~<br>~~QC~~|
|C7<br>~~QC~~<br>~~GO~~|24 pF Chip Capacitor<br>~~QC~~<br>~~GO~~|ATC600F240JT250XT<br>~~QC~~<br>~~GO~~|ATC<br>~~QC~~<br>~~GO~~|
|C8<br>~~GG~~|68 pF Chip Capacitor<br>~~GG~~|ATC600F680JT250XT<br>~~GG~~|ATC<br>~~GG~~|
|C9<br>~~CG~~|27 pF Chip Capacitor<br>~~CG~~|ATC600F270JT250XT<br>~~CG~~|ATC<br>~~CG~~|
|C10<br>~~GC~~|8.2 pF Chip Capacitor<br>~~GC~~|ATC600F8R2BT250XT<br>~~GC~~|ATC<br>~~GC~~|
|C11<br>~~GC~~<br>~~GG~~|3.0 pF Chip Capacitor<br>~~GC~~<br>~~GG~~|ATC600F3R0BT250XT<br>~~GC~~<br>~~GG~~|ATC<br>~~GC~~<br>~~GG~~|
|C13<br>~~GG~~<br>~~CC~~|0.1F Chip Capacitor<br>~~GG~~<br>~~CC~~|GRM21BR71H104KA01B<br>~~GG~~<br>~~CC~~|Murata<br>~~GG~~<br>~~CC~~|
|C14<br>~~CC~~<br>~~CC~~|1F Chip Capacitor<br>~~CC~~<br>~~CC~~|GRM21BR71H105KA12L<br>~~CC~~<br>~~CC~~|Murata<br>~~CC~~<br>~~CC~~|
|C16, C17<br>~~CC~~<br>~~CC~~|10F Chip Capacitors<br>~~CC~~<br>~~CC~~|GRM31CR61H106KA12L<br>~~CC~~<br>~~CC~~|Murata<br>~~CC~~<br>~~CC~~|
|J1<br>~~CC~~<br>~~CC~~|3 Pin Connector<br>~~CC~~<br>~~CC~~|AMP--9--146305--0<br>~~CC~~<br>~~CC~~|TE Connectivity<br>~~CC~~<br>~~CC~~|
|L1, L2, L3, L6<br>~~CC~~<br>~~Ge~~|5.5 nH Inductors<br>~~CC~~<br>~~Ge~~|0806SQ--5N5GLC<br>~~CC~~<br>~~Ge~~|Coilcraft<br>~~CC~~<br>~~Ge~~|
|L4<br>~~Ge~~|17 nH Inductor<br>~~Ge~~|0908SQ--17NGLC<br>~~Ge~~|Coilcraft<br>~~Ge~~|
|L5<br>~~Ge~~|1.65 nH Inductor<br>~~Ge~~|0906--2KLC<br>~~Ge~~|Coilcraft<br>~~Ge~~|
|L7<br>~~Ge~~|2.55 nH Inductor<br>~~Ge~~|0906--3JLC<br>~~Ge~~|Coilcraft<br>~~Ge~~|
|Q1<br>~~Ge~~|RF Power LDMOS Transistor<br>~~Ge~~|AFT05MS031NR1<br>~~Ge~~|Freescale<br>~~Ge~~|
|R1<br>~~Ge~~|62, 1/4 W Chip Resistor<br>~~Ge~~|RG2012N--620--BT1<br>~~Ge~~|Susumu<br>~~Ge~~|
|PCB<br>~~Ce~~|0.020,r = 4.9<br>~~Ce~~|S1000--2<br>~~FD~~|Shengyi<br>~~FD~~|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
15
**==> picture [437 x 688] intentionally omitted <==**
**----- Start of picture text -----**<br>
o-<br>5<br>RF<br>OUTPUT<br>Z27<br>C12<br>Z26 C11<br>Z25<br>L7<br>Z24 C10<br>Z23<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>L6 <br>DS<br>V<br>0.057 0.201 0.110 0.361 0.112 0.083 0.073 0.077 0.060<br>Description<br>Z22 C9 <br>C16<br>Z21<br>0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034<br>C13 L5<br>C14 Z20 C8<br>Microstrip Z19 Z20* Z21* Z22* Z23 Z24 Z25 Z26 Z27<br>Z19<br>C15<br>Z17 B2 L4 Z18<br>Z16 Z15 C7<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>Z14<br>0.048 0.142 0.149 0.085 0.090 0.186 0.149 0.085 0.044<br>Description<br> <br>B1 R1 Z11 0.240 0.240 0.034 0.034 0.240 0.240 0.034 0.034 0.240<br>Z10<br>Z13 Z12<br>C6 Z9<br>C5<br>C17 Z8 Microstrip Z10 Z11 Z12 Z13* Z14 Z15 Z16 Z17* Z18<br>C4<br>GS Z7<br>V<br>L3<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>Z6<br>C3<br>0.060 0.200 0.056 0.154 0.237 0.234 0.010 0.083 0.178<br>Description<br>Z5 <br>Figure 18. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 380--450 MHz<br>L2 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034<br>Z4<br>C2<br>Z3 Microstrip Z1 Z2 Z3 Z4 Z5* Z6* Z7 Z8 Z9 * Line length includes microstrip bends<br>Table 15. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 380--450 MHz<br>L1<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
16
## **TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [282 x 392] intentionally omitted <==**
**----- Start of picture text -----**<br>
18 80<br>17.9 V DD = 12.5 Vdc, P in = 0.5 W (Avg.) 75<br>17.8 Saenec=== IDQ = 100 mA ee D 70<br>17.7 ee 65<br>ee<br>17.6 60<br>G ps<br>17.5 30<br>| PF | | ae<br>17.4 29<br>Pout<br>17.3 i eee 28<br>17.2 ee 27<br>17.1 26<br>Pp of fof tT | | ee<br>17 eee 25<br>370 380 390 400 410 420 430 440 450 460<br>f, FREQUENCY (MHz)<br>Figure 19. Power Gain, Drain Efficiency and Output Power versus<br>Frequency at a Constant Input Power — 12.5 V<br>18.5 80<br>18.4 VDD = 13.6 Vdc, Pin = 0.5 W (Avg.) 75<br>IDQ = 100 mA<br>18.3 HHS D 70<br>|<br>18.2 65<br>Gps<br>18.1 60<br>| Tf |<br>18 35<br>pot | ct tT tT | TNT<br>17.9 eee 34<br>ee<br>17.8 P out 33<br>17.7 e eee 32<br>17.6 31<br>Pp of ft fl | | |<br>17.5 eee 30<br>370 380 390 400 410 420 430 440 450 460<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 19. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 12.5 V**
**Figure 20. Power Gain, Drain Effiency and Output Power versus Frequency at a Constant Input Power — 13.6 V**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
17
**TYPICAL CHARACTERISTICS — 380--450 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [452 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
50<br>VDD = 13.6 Vdc, Pin = 0.5 W 5<br>40 V DD = 13.6 Vdc, P in = 0.25 W VDD = 13.6 Vdc, VDD = 13.6 Vdc, Pin = 0.25 W<br>4 P in = 0.5 W<br>VDD = 12.5 Vdc, Pin = 0.5 W<br>30 A) 3 OPE<br>VDD = 12.5 Vdc,<br>VDD = 12.5 Vdc, Pin = 0.5 W<br>2<br>20 V4 Pin = 0.25 W 7. V Ff DD = 12.5 Vdc,<br>1 Pin = 0.25 W<br>10 AL f = 420 MHz a= f = 420 MHz<br>0<br>Detail A 0 0.4 0.8 1.2 1.6 2<br>0 es A<br>0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>**----- End of picture text -----**<br>
**Figure 21. Output Power versus Gate--Source Voltage**
**==> picture [297 x 176] intentionally omitted <==**
**----- Start of picture text -----**<br>
22 100 80<br>VDD = 13.6 Vdc, IDQ = 100 mA 420 MHz<br>70<br>20 80<br>eT 420 MHz 450 MHz 60<br>380 MHz<br>450 MHz<br>18 60 50<br>420 MHz<br>Gps 450 MHz 40<br>16 380 MHz 40<br>380 MHz 30<br>14 BeAA, 20<br>D Pout 20<br>12 TeafiHR 0 10<br>0.01 0.1 1 4<br>Pin, INPUT POWER (WATTS)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>
**Figure 22. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
18
**380--450 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [425 x 186] intentionally omitted <==**
**----- Start of picture text -----**<br>
aXVA,<br>LYSleMALEPIELER$ PRES f = 450 MHz SoSCXxL SESE Zo = 5 A?LD<br>MTT LE ERE Se OTA<br>efef].ef bl LASSkj LTA? f = 380 MHz CROLLLLL Zsource EOK LR O K KSINS S eeuneEE LLTALE<br>° EPshh TALIS we EK LRRE [O]<br>Ste]fe }| sHY SALI t TLRPLREREROK ROR OK KESIS EESILL CHAELH<br>AG rarer enadinns nite een aise Memenarnceertit<br>fo Eo SERRE ETE PTE AT TIL ORO eS EE<br>fed Seana EPEAT TUTE RORILLOOS REESS<br>| PARR PA [A] [LILI]<br>Senecceesrescis:rs:Mmmae a teeneeees| PASH LPL ET [POORER] LER RRERES<br>eeerevereituisitz:emgee=senesss=s ay DARA THEA LPL<br>avesasfafapazisiites a ewan eenneersse ma Meee CEE<br>if ridaCEE arer teerereCOMPONENTEF, JRE(atGONDUCTANCEpeeeaPerteMepeeritrmesscci f = 380 MHz COMPONEN (#-} [ Pits | {4 Cops<br>f = 450 MHz<br>ERSes perspec Zload e<br>**----- End of picture text -----**<br>
|**f**<br>**MHz**|**Zsource**<br>|**Zload**<br>|
|---|---|---|
|380|1.57 + j1.94|2.53 -- j0.27|
|390|1.66 + j2.07|2.53 -- j0.26|
|400|1.74 + j2.16|2.56 -- j0.27|
|410|1.79 + j2.20|2.49 -- j0.29|
|420|1.79 + j2.21|2.38 -- j0.28|
|430|1.74 + j2.21|2.26 -- j0.24|
|440|1.62 + j2.23|2.11 -- j0.16|
|450|1.45 + j2.29|1.95 -- j0.05|
**==> picture [273 x 131] intentionally omitted <==**
**----- Start of picture text -----**<br>
Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 23. UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
19
## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
|**Table 16. 450--520 MHz UHF Broadband Performance**(In Freescale Reference Circuit, 50 ohm system)|**Table 16. 450--520 MHz UHF Broadband Performance**(In Freescale Reference Circuit, 50 ohm system)|**Table 16. 450--520 MHz UHF Broadband Performance**(In Freescale Reference Circuit, 50 ohm system)|(In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 13.6 Volts, IDQ= 100 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**P1dB**<br>**(W)**<br>450<br>17.7<br>62.0<br>31<br>490<br>18.7<br>63.8<br>31<br>520<br>17.9<br>67.0<br>31<br>~~—————~~||||
|**Table 17. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**<br>**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**||**Result**|
|490<br>CW<br>>65:1 at all<br>2.0|17||No Device|
|Phase Angles<br>(3 dB Overdrive)|||Degradation|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
20
## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [474 x 242] intentionally omitted <==**
**----- Start of picture text -----**<br>
VGS VDS<br>© L l C1 B1 O C C13 C14 C15 B2 O C17 o| Ld O<br>= = —( lels) eee =| Jo<br>C19 J1 C18<br>JIT) a S S ETG e) TESS of ) 1p le<br>C16 C12<br>O O 2 |] fo Sete O ILE<br>L1 R1 L7<br>C5 C6 L4 C9 C11<br>O- Ss O0 G8 O5 0I P NSy Oa= JWANY<br>Q1 C8<br>C2<br>Ol} bp Ete C4 tt a<br>{| fe 3 [Np<br>C7<br>L2<br>L6<br>se O ISIE L3 O = L5 ‘A\y SS<br>5 Oo) SOS 0000 — omo o00 zo -<br>E C3 e @ LEER o T E C10 I<br>D37515<br>**----- End of picture text -----**<br>
**Figure 24. AFT05MS031NR1 UHF Broadband Reference Circuit Component Layout — 450--520 MHz**
**Table 18. AFT05MS031NR1 UHF Broadband Reference Circuit Component Designations and Values — 450--520 MHz**
|**Part**<br>~~es~~<br>~~a~~|**Description**<br>~~QO~~|**Part Number**<br>~~QO~~|**Manufacturer**<br>~~QO~~|
|---|---|---|---|
|B1<br>~~es~~<br>~~a~~<br>~~a~~|Low Current Ferrite Bead<br>~~QO~~|2508051107Y0<br>~~QO~~|Fair--Rite<br>~~QO~~|
|B2<br>~~a~~<br>~~a~~<br>~~a~~|High Current Ferrite Bead<br>|2518065007Y6<br>|Fair--Rite<br>|
|C1<br>~~a~~<br>~~a~~|56 pF Chip Capacitor<br>|ATC600F560JT250XT<br>|ATC<br>|
|C2<br>~~aOO~~|2.7 pF Chip Capacitor<br>~~OO~~|ATC600F2R7BT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C3<br>~~OO~~|12 pF Chip Capacitor<br>~~OO~~|ATC600F120JT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C4, C9<br>~~OO~~|27 pF Chip Capacitors<br>~~OO~~|ATC600F270JT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C5, C8<br>~~OO~~<br>~~OO~~|33 pF Chip Capacitors<br>~~OO~~<br>~~OO~~|ATC600F330JT250XT<br>~~OO~~<br>~~OO~~|ATC<br>~~OO~~<br>~~OO~~|
|C6<br>~~OO~~<br>~~OO~~|39 pF Chip Capacitor<br>~~OO~~<br>~~OO~~|ATC600F390JT250XT<br>~~OO~~<br>~~OO~~|ATC<br>~~OO~~<br>~~OO~~|
|C7, C10<br>~~OO~~|18 pF Chip Capacitors<br>~~OO~~|ATC600F180JT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C11<br>~~OO~~<br>~~OO~~|8.2 pF Chip Capacitor<br>~~OO~~<br>~~OO~~|ATC600F8R2BT250XT<br>~~OO~~<br>~~OO~~|ATC<br>~~OO~~<br>~~OO~~|
|C12<br>~~OO~~<br>~~a~~|1.8 pF Chip Capacitor<br>~~OO~~|ATC600F1R8BT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C13<br>~~a~~<br>~~a~~<br>~~ee~~|0.1F Chip Capacitor|GRM21BR71H104KA01B|Murata|
|C14<br>~~a~~<br>~~ee~~|1F Chip Capacitor|GRM21BR71H105KA12L|Murata|
|C15, C16, C17<br>~~ee~~<br>~~OO~~|240 pF Chip Capacitors<br>~~OO~~|ATC600F241JT250XT<br>~~OO~~|ATC<br>~~OO~~|
|C18, C19<br>~~OO~~<br>~~OO~~|10F Chip Capacitors<br>~~OO~~<br>~~OO~~|GRM31CR61H106KA12L<br>~~OO~~<br>~~OO~~|Murata<br>~~OO~~<br>~~OO~~|
|J1<br>~~OO~~<br>~~OO~~<br>~~rs~~|3 Pin Connector<br>~~OO~~<br>~~OO~~<br>~~Gn~~|AMP--9--146305--0<br>~~OO~~<br>~~OO~~<br>~~Gn~~|TE Connectivity<br>~~OO~~<br>~~OO~~<br>~~Gn~~|
|L1, L3<br>~~OO~~<br>~~rs~~<br>~~rs~~|6.0 nH Inductors<br>~~OO~~<br>~~Gn~~<br>~~Ge~~|0806SQ--6N0GLC<br>~~OO~~<br>~~Gn~~<br>~~Ge~~|Coilcraft<br>~~OO~~<br>~~Gn~~<br>~~Ge~~|
|L2, L6<br>~~rs~~<br>~~rs~~<br>~~rs~~|5.5 nH Inductors<br>~~Gn~~<br>~~Ge~~<br>~~Ge~~|0806SQ5N5GLC<br>~~Gn~~<br>~~Ge~~<br>~~Ge~~|Coilcraft<br>~~Gn~~<br>~~Ge~~<br>~~Ge~~|
|L4<br>~~rs~~<br>~~rs~~<br>~~re~~|17 nH Inductor<br>~~Ge~~<br>~~Ge~~<br>~~Gn~~|0908SQ--17NGLC<br>~~Ge~~<br>~~Ge~~|Coilcraft<br>~~Ge~~<br>~~Ge~~|
|L5, L7<br>~~rs~~<br>~~re~~<br>~~re~~|1.65 nH Inductors<br>~~Ge~~<br>~~Gn~~|0906--2KLC<br>~~Ge~~|Coilcraft<br>~~Ge~~|
|Q1<br>~~re~~<br>~~re~~<br>~~re~~|RF Power LDMOS Transistor<br>~~Gn~~|AFT05MS031NR1|Freescale|
|R1<br>~~re~~<br>~~re~~|62, 1/4 W Chip Resistor|RG2012N--620--BT1|Susumu|
|PCB<br>~~re~~<br>~~eG~~|0.020,r = 4.9<br>~~eG~~|S1000--2<br>~~eG~~|Shengyi<br>~~eG~~|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
21
**==> picture [451 x 688] intentionally omitted <==**
**----- Start of picture text -----**<br>
an<br>i<br>i<br>a<br>a<br>a<br>i<br>i 4<br>H H<br>+ l! | b i<br>tli - l r<br>m all<br>| Fe] a<br>if<br>| Fe] a<br>i<br>I !<br>K H : H HI<br>a<br>E h A 4<br>,<br>i<br>i<br>_<br>i<br>|<br>|| aoa<br>i<br>a<br>RF<br>OUTPUT<br>Z29<br>C17<br>Z28 C12<br>Z27<br>L7<br>Z26 C11<br>Z25<br>L6 Microstrip Microstrip Microstrip* Microstrip* Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>VDS Z24 C10 0.010 0.176 0.118 0.295 0.018 0.177 0.022 0.188 0.060<br>Description<br> <br>Z23<br>C18<br>0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034<br>L5<br>C13<br>Z22 C9<br>C14 Z21 C8 Microstrip Z21 Z22 Z23* Z24* Z25 Z26 Z27 Z28 Z29<br>C15 Z20<br>Z18 B2 L4<br>Z19<br>Z17 Z16 C7<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>Z15<br>0.010 0.180 0.149 0.084 0.054 0.170 0.149 0.184 0.044 0.057<br>Description<br> <br>B1 R1 Z12 0.240 0.240 0.034 0.034 0.240 0.240 0.034 0.034 0.240 0.034<br>Z14 Z13 Z11<br>Z10<br>C16 C6<br>Z9 Microstrip Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 Z19 Z20<br>C19 C5<br>Z8<br>C4<br>GS<br>V Z7<br>L3 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z6 0.060 0.200 0.128 0.054 0.202 0.160 0.010 0.115 0.060 0.150<br>C3 Description<br> <br>Z5 Figure 25. AFT05MS031NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034 0.034<br>L2<br>Z4<br>C2<br>Microstrip Z1 Z2 Z3 Z4 Z5* Z6* Z7 Z8 Z9 Z10 * Line length includes microstrip bends<br>Z3 Table 19. AFT05MS031NR1 UHF Broadband Reference Circuit Microstrips — 450--520 MHz<br>L1<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
22
## **TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [282 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
18 70<br>17.8 V DD = 12.5 Vdc, P in = 0.5 W (Avg.) D 68<br>IDQ = 100 mA<br>17.6 =aenee==—= 66<br>17.4 64<br>ee eee<br>17.2 Gps 62<br>17 pT NS 60<br>| | P| | | |<br>16.8 30<br>Pout<br>16.6 pf f feet Ef 29<br>pf | |<br>16.4 28<br>| | | ee tT dT<br>16.2 27<br>poet | | tt UN<br>16 26<br>| ot | fT | |<br>440 450 460 470 480 490 500 510 520 530<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 26. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 12.5 V**
**==> picture [284 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
19 73<br>18.75 V DD = 13.6 Vdc, P in = 0.5 W (Avg.) 71<br>18.5 Pep IDQ = 100 mA 69<br>| |<br>18.25 Gps 67<br>18 65<br>17.75 D 63<br>17.5 | een ft | 61<br>| P| | ft [|]<br>17.25 36<br>a ee ee ee ee<br>17 P out 34<br>16.75 peNN 32<br>16.5 ee 30<br>16.25 ee ee ee ee 28<br>ee ee ee eee<br>16 eeeee 26<br>440 450 460 470 480 490 500 510 520 530<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 27. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 13.6 V**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
23
## **TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [455 x 397] intentionally omitted <==**
**----- Start of picture text -----**<br>
60<br>VDD = 13.6 Vdc, Pin = 0.5 W 25<br>VDD = 13.6 Vdc, Pin = 0.25 W<br>50 = VDD = 13.6 Vdc, Pin = 0.25 W —— 20 P VDD in = 0.5 W = 13.6 Vdc, ier<br>40 V DD = 12.5 Vdc, P in = 0.5 W VDD = 12.5 Vdc,<br>15<br>P in = 0.5 W<br>30 KE Yh<br>P V DDin = 0.25 W = 12.5 Vdc, 10 VDD = 12.5 Vdc,<br>20 Pin = 0.25 W<br>5<br>ff fy<br>10 f = 490 MHz f = 490 MHz<br>0<br>Detail A 0 0.5 1 1.5 2 2.5 3 3.5<br>0 AAZa e 2 4a<br>0 1 2 3 4 5 6 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 28. Output Power versus Gate--Source Voltage<br>20 80<br>520 MHz<br>Gps 490 MHz<br>450 MHz<br>18 ae 60<br>490 MHz<br>Gor \<br>D<br>450 MHz 490 MHz<br>16 40<br>520 MHz yi Za 520 MHz<br>14 P out 450 MHz 20<br>VDD = 13.6 Vdc, IDQ = 100 mA<br>12 wan anil a 0<br>0.01 0.1 1 3<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>
**Figure 29. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
24
## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [433 x 234] intentionally omitted <==**
|**f**<br>**MHz**|**Zsource**<br>|**Zload**<br>|
|---|---|---|
|450|1.37 + j1.64|2.57 -- j1.01|
|460|1.43 + j1.72|2.49 -- j1.03|
|470|1.47 + j1.79|2.38 -- j1.03|
|480|1.49 + j1.83|2.26 -- j1.01|
|490|1.47 + j1.86|2.11 -- j0.95|
|500|1.41 + j1.89|1.97 -- j0.87|
|510|1.32 + j1.93|1.82 -- j0.76|
|520|1.20 + j1.99|1.68 -- j0.62|
Zsource = Test circuit impedance as measured from gate to ground.
**==> picture [273 x 108] intentionally omitted <==**
**----- Start of picture text -----**<br>
Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 30. UHF Broadband Series Equivalent Source and Load Impedance — 450--520 MHz**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
25
## **PACKAGE DIMENSIONS**
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
26
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
27
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
28
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
29
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
30
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
31
## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following documents, software and tools to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
- AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
|**Revision**|**Date**|**Description**|
|---|---|---|
|0|June 2012|<br>Initial Release of Data Sheet|
|1|Apr. 2013|<br>Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used<br>during test, p. 1, 3, 14, 20<br><br>Added 136--174 MHz VHF Broadband Reference Circuit as follows:<br>-- Typical Performance table, p. 1<br>-- Table 8, VHF Broadband Performance, p. 8<br>-- Table 9, Load Mismatch/Ruggedness, p. 8<br>-- Fig. 10, VHF Broadband Reference Circuit Component Layout, p. 9<br>-- Table 10, VHF Broadband Reference Circuit Component Designations and Values, p. 9<br>-- Fig. 11, VHF Broadband Reference Circuit Schematic, p. 10<br>-- Table 11, VHF Broadband Reference Circuit Microstrips, p. 10<br>-- Fig. 12, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input<br>Power -- 12.5 V, p. 11<br>-- Fig. 13, Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input<br>Power -- 13.6 V, p. 11<br>-- Fig. 14, Output Power versus Gate--Source Voltage, p. 12<br>-- Fig. 15, Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency, p. 12<br>-- Fig. 16, VHF Broadband Series Equivalent Source and Load Impedance, p. 13<br><br>Figs. 10, 17 and 24, Reference Circuit Component Layouts: added manufacturer part number, p. 9, 15, 21<br><br>Fig. 23, UHF Broadband Series Equivalent Source and Load Impedance — 380--450 MHz: corrected bias<br>measurement from 10 mA to 100 mA, p. 19|
**AFT05MS031NR1 AFT05MS031GNR1**
RF Device Data Freescale Semiconductor, Inc.
32
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**AFT05MS031NR1 AFT05MS031GNR1** & freescale
> DocumRF D **e** nt Number: AFT05MS031Nvice Data Rev. 1, 4/2013Freescale Semiconductor, Inc.
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Updated at April 10, 2026
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