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AFT05MS006NT1
RF FET Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W
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- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:30VDC; Continuous Drain Current Id:-; Power Dissipation Pd:128W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:PLD-1.5W; No.
- MSL: MSL 3 - 168 hours
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 128W
- Transistor Mounting: Surface Mount
- Transistor Case Style: PLD-1.5W
- Operating Frequency Max: 941MHz
- Operating Frequency Min: 136MHz
- Drain Source Voltage Vds: 30VDC
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.86 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor** Technical Data
Document Number: AFT05MS006N Rev. 0, 2/2014
## **RF Power LDMOS Transistor** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
## **AFT05MS006NT1**
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
**136–941 MHz, 6.0 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR**
## **Narrowband Performance** (7.5 Vdc, IDQ = 100 mA, TA = 25C, CW)
|**Frequency**<br>**Gps**<br>**D**|||**Pout**||**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|**RF POWER LDMOS TRANSISTOR**|
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|**(MHz)**<br>**(dB)**<br>**(%)**|||**(W)**||||||||||||
|520 **(1)**<br>18.3<br>73.0|||6.0||||||||||||
|**Wideband Performance** (7.5 Vdc, TA= 25C, CW)|||||||||||||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>136–174<br>0.19<br>15.5<br>60.0<br>440--520 **(2)**<br>0.15<br>16.3<br>65.0<br>760--870 **(3)**<br>0.20<br>15.2<br>58.5<br>~~—~~|||**Pout**<br>**(W)**<br>6.0<br>6.4<br>6.7||||**PLD--1.5W**<br>~||||||||
|**Load Mismatch/Ruggedness**|||||||||||||||
|**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test**<br>**Voltage**<br>**Result**<br>520 **(1)**<br>CW<br>> 65:1 at all<br>Phase Angles<br>0.12<br>(3 dB Overdrive)<br>10.8<br>No Device<br>Degradation<br>1. Measured in 520 MHz narrowband test circuit.<br>2. Measured in 440–520 MHz UHF broadband reference circuit.<br>Gate<br>~~EEE} ~~}||||||~~i~~|||||||||
|3. Measured in 760–870 MHz UHF broadband reference circuit.|||||||||||||||
**==> picture [100 x 7] intentionally omitted <==**
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Gate Drain<br>**----- End of picture text -----**<br>
Note: The center pad on the backside of the package is the source terminal for the transistor.
## **Features**
- Characterized for Operation from 136 to 941 MHz
**Figure 1. Pin Connections**
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband — Full Power Across the Band
- Exceptional Thermal Performance
- Extreme Ruggedness
- High Linearity for: TETRA, SSB
- In Tape and Reel. T1 Suffix = 1,000 Units, 16 mm Tape Width, 7--inch Reel.
## **Typical Applications**
- Output Stage VHF Band Handheld Radio
- Output Stage UHF Band Handheld Radio
- Output Stage for 700–800 MHz Handheld Radio
**AFT05MS006NT1** ~~*treescale~~
Freescale Semiconductor, Inc., 2014. All rights reserved.
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
1
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**|||**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage|||VDSS|--0.5, +30|Vdc|
|Gate--Source Voltage|||VGS|--6.0, +12|Vdc|
|Operating Voltage|||VDD|12.5, +0|Vdc|
|Storage Temperature Range|||Tstg|--65 to +150|C|
|Case Operating Temperature Range|||TC|--40 to +150|C|
|Operating Junction Temperature Range **(1,2)**|||TJ|--40 to +150|C|
|Total Device Dissipation @ TC= 25C|||PD|125|W|
|Derate above 25C||||1.0|W/C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 79C, 6.0 W CW, 7.5 Vdc, IDQ= 100 mA, 520 MHz<br>RJC<br>1.0<br>C/W<br>~~ee~~||||||
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>A, passes 150 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~oO~~||||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)||||||
|**Characteristic**||**Symbol**|**Min**|**Typ**<br>**Max**|**Unit**|
|**Off Characteristics**||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 30 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>10<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 7.5 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>600<br>nAdc<br>~~ae~~||||||
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 78Adc)<br>VGS(th)<br>1.8<br>2.2<br>2.6<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 0.78 Adc)<br>VDS(on)<br>—<br>0.15<br>—<br>Vdc<br>Forward Transconductance<br>(VDS= 7.5 Vdc, ID= 4.7 Adc)<br>gfs<br>—<br>4.4<br>—<br>S<br>~~arene~~||||||
|1. Continuous use at maximum temperature will affect MTTF.||||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF||||Select Software & Tools/Development Tools/Calculators to access MTTF||
|calculators by product.||||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
|**Characteristic**|**Symbol**|**Min**|**Typ**||**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**Dynamic Characteristics**|||||||
|Reverse Transfer Capacitance|Crss|—|1.7||—|pF|
|(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||||
|Output Capacitance|Coss|—|47||—|pF|
|(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|||||||
|Input Capacitance|Ciss|—|75||—|pF|
|(VDS= 7.5 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|||||||
|**Functional Tests**(In Freescale Test Fixture, 50 ohm system) VDD= 7.5 Vdc, IDQ= 100 mA, P||= 100 mA, Pin= 19.5 dBm, f = 520 MHz|||||
|Common--Source Amplifier Output Power<br>Pout<br>—<br>6.0<br>—<br>W<br>Drain Efficiency<br>D<br>—<br>73.0<br>—<br>%<br>~~——~~|||||||
|**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system) IDQ= 100 mA|||||||
|**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>520<br>CW<br>> 65:1 at all Phase Angles<br>0.12<br>(3 dB Overdrive)<br>10.8<br>No Device Degradation<br>~~a~~|||||||
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
3
**TYPICAL CHARACTERISTICS**
**==> picture [238 x 446] intentionally omitted <==**
**----- Start of picture text -----**<br>
100<br>ee<br>aa<br>———— Ciss<br>ee eee ee<br>C oss<br>$+ Measured with 30 mV(rms)ac @ 1 MHz, V 1 + GS = 0 Vdc —<br>10<br>a<br>pee<br>aa<br>aee<br>poa| [en] ee ee ee eee<br>Crss<br>1<br>0 po) 2 | 4 6 8 | 10 12<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 2. Capacitance versus Drain--Source Voltage<br>10 [9]<br>a a<br>VDD = 7.5 Vdc<br>ID = 0.86 Amps<br>10 [8]<br>ee 1.1 Amps —— ee<br>———————————a a «eeee<br>eeeee eee<br>10 [7] SESS 1.32 Amps<br>—==—=—=—=—_—_—=_—_——=<br>a<br>a<br>10 [6] rr eee<br>eeeee<br>a<br>po<br>a ee<br>10 [5]<br>90 100 110 120 130 140 150 160<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>C, CAPACITANCE (pF)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 2. Capacitance versus Drain--Source Voltage**
**Figure 3. MTTF versus Junction Temperature — CW**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
4
## **520 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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**Figure 4. AFT05MS006NT1 Narrowband Test Circuit Component Layout — 520 MHz**
**Table 6. AFT05MS006NT1 Narrowband Test Circuit Component Designations and Values — 520 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1|Short RF Bead|2743019447|Fair--Rite|
|C1|22F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C2, C13|0.1F Chip Capacitors|CDR33BX104AKWS|AVX|
|C3, C12|0.01F Chip Capacitors|C0805C103K5RAC|Kemet|
|C4, C11|180 pF Chip Capacitors|ATC100B181JT300XT|ATC|
|C5|9.1 pF Chip Capacitor|ATC100B9R1CT500XT|ATC|
|C6, C7|15 pF Chip Capacitors|ATC100B150JT500XT|ATC|
|C8, C9|27 pF Chip Capacitors|ATC100B270JT500XT|ATC|
|C10|2.7 pF Chip Capacitor|ATC100B2R7BT500XT|ATC|
|C14|330F, 35 V Electrolytic Capacitor|MCGPR35V337M10X16--RH|Multicomp|
|C15, C16|20 pF Chip Capacitors|ATC100B200JT500XT|ATC|
|C17|16 pF Chip Capacitor|ATC100B160JT500XT|ATC|
|L1|8.0 nH, 3 Turn Inductor|A03TKLC|Coilcraft|
|L2|5 nH, 2 Turn Inductor|A02TKLC|Coilcraft|
|R1, R2, R3, R4, R5|1.5, 1/4 W Chip Resistors|RC1206FR--071R5L|Yageo|
|R6|27, 1/4 W Chip Resistor|CRCW120627R0FKEA|Vishay|
|PCB|Rogers RO4350B, 0.030,r = 3.66|D53508|MTL|
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
5
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t |<br>RF<br>OUTPUT<br>Z18<br>C17<br>Z17<br>C10<br>SUPPLY Z16<br>V<br>L3<br>+ C14<br>Taper Microstrip<br><br>Z15<br>C13 C15 Z14 C16 Description Microstrip Microstrip Microstrip 0.620 Microstrip Microstrip Microstrip Microstrip Microstrip<br>C12<br>Z13 0.620 0.620 0.620 0.320 0.320 0.320 0.120 0.120 0.080<br> <br>C11<br>Z12<br>L2 0.243 0.692 0.045 0.162 0.319 0.115 0.222 0.443 0.238<br>Z11<br>Microstrip Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18<br>DUT<br>Z10<br>R1 R2 R3 R4 R5<br>Z9 Taper Microstrip<br>C9 Z8 C8 Description Microstrip Microstrip Microstrip Microstrip Microstrip 0.620 Microstrip Microstrip Microstrip<br> <br>0.080 0.120 0.320 0.320 0.320 0.320 0.620 0.620 0.620<br>R6 Z7<br> <br>Z6<br>C4<br>0.328 0.490 0.055 0.190 0.365 0.160 0.045 0.332 0.055<br>Figure 5. AFT05MS006NT1 Narrowband Test Circuit Schematic — 520 MHz<br>Z5<br>C7<br>B1<br>Z4<br>C6 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9<br>Table 7. AFT05MS006NT1 Narrowband Test Circuit Microstrips — 520 MHz<br>C3<br>Z3<br>C2 C5<br>+ C1 Z2<br>Z1<br>VBIAS RF INPUT<br>**----- End of picture text -----**<br>
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
6
**TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND REFERENCE CIRCUIT**
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**----- Start of picture text -----**<br>
7<br>VDD = 7.5 Vdc, f = 520 MHz<br>6 Te<br>5 CA<br>Pin = 17.75 dBm<br>4 ay<br>CO<br>3<br>Pin = 14.75 dBm<br>2 See<br>1 ane<br>0 PEPE<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 6. Output Power versus Gate--Source Voltage<br>24 90<br>21 Gps D 80<br>18 Ht 70<br>ATER<br>15 60<br>VDD = 7.5 Vdc, IDQ = 100 mA<br>12 pig f = 520 MHz ET 50<br>9 SA eee 40<br>Pout<br>6 30<br>pA | |<br>3 lat 20<br>0 10<br>pr tT | |PE| yt tt<br>0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18<br>Pin, INPUT POWER (WATTS)<br>Figure 7. Power Gain, Drain Efficiency and Output<br>Power versus Input Power<br>VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6.0 W Avg.<br>f Zsource Zload<br>MHz <br>520 1.14 + j2.28 1.78 + j1.71<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>pt L y<br>Zsource Zload<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)<br>out D<br>P<br>**----- End of picture text -----**<br>
**Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
7
## **440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
|**Table 8. 440–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 440–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 440–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 440–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 100 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>440<br>0.13<br>16.7<br>63.7<br>5.9<br>480<br>0.08<br>18.6<br>68.5<br>6.1<br>520<br>0.11<br>17.5<br>73.1<br>6.0<br>~~——————~~||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**|**Pin**|||
|**(MHz)**<br>**Type**|**VSWR**<br>**(W)**<br>**Test Voltage, VDD**||**Result**|
|480<br>CW|> 65:1 at all<br>0.19<br>10.8||No Device|
||Phase Angles<br>(3 dB Overdrive)||Degradation|
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
8
## **440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
||**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**|**440–520 MHz UHF BROADBAND REFERENCE CIRCUIT**||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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||**Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz**||**Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz**||||||||**Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz**||||||**Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz**||**Figure 9. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 440–520 MHz**|||
|**Table 10. AFT05MS006NT1 UHF Broadband Reference Circuit Com**||||||||||||**Table 10. AFT05MS006NT1 UHF Broadband Reference Circuit Com**|||**Table 10. AFT05MS006NT1 UHF Broadband Reference Circuit Component Designations and Values — 440–520 MHz**|||||||
||**Part**||||||||**Description**||||||||**Part Number**|||**Manufacturer**||
|B1|||||||||30, 6 A Ferrite Bead||||||||MPZ2012S300A|||Fair-Rite||
|C1|||||||||18 pF Chip Capacitor||||||||ATC600F180JT250XT|||ATC||
|C2, C3, C11|||||||||15 pF Chip Capacitors||||||||ATC600F150JT250XT|||ATC||
|C4|||||||||56 pF Chip Capacitor||||||||ATC600F560JT250XT|||ATC||
|C5|||||||||100 pF Chip Capacitor||||||||ATC600F100JT250XT|||ATC||
|C6, C7|||||||||0.1F Chip Capacitors||||||||GRM21BR71H104KA01B|||Murata||
|C8|||||||||0.01F Chip Capacitor||||||||GRM21BR72A103KA01B|||Murata||
|C9|||||||||240 pF Chip Capacitor||||||||ATC600F241JT250XT|||ATC||
|C10|||||||||2.2F Chip Capacitor||||||||GRM31CR71H225KA88L|||Murata||
|C12|||||||||39 pF Chip Capacitor||||||||ATC600F390JT250XT|||ATC||
|C13|||||||||18 pF Chip Capacitor||||||||ATC600F180JT250XT|||ATC||
|C14|||||||||5.1 pF Chip Capacitor||||||||ATC600F5R1BT250XT|||ATC||
|C15|||||||||100 pF Chip Capacitor||||||||ATC600F101JT250XT|||ATC||
|J1|||||||||Right-Angle Breakaway Headers (3 pins)||Right-Angle Breakaway Headers (3 pins)||||||22-28-8360|||Molex||
|L1|||||||||5.5 nH Inductor||||||||0806SQ5N5|||Coilcraft||
|L2|||||||||6 nH Inductor||||||||0806SQ6N0|||Coilcraft||
|L3, L4|||||||||16.6 nH Inductors||||||||0908SQ17N|||Coilcraft||
|L5|||||||||1.65 nH Inductor||||||||0906-2JLC|||Coilcraft||
|L6|||||||||8.1 nH Inductor||||||||0908SQ8N1|||Coilcraft||
|Q1|||||||||RF Power LDMOS Transistor||||||||AFT05MS006NT1|||Freescale||
|R1|||||||||20, 1/4 W Chip Resistor||||||||CRCW120620R0FKEA|||Vishay||
|PCB|||||||||0.020,r = 4.8, Shengyi S1000-2||||||||D49947|||MTL||
**Table 10. AFT05MS006NT1 UHF Broadband Reference Circuit Component Designations and Values — 440–520 MHz**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
9
**==> picture [351 x 608] intentionally omitted <==**
**----- Start of picture text -----**<br>
:<br>i<br>RF<br>OUTPUT<br>Z20<br>C15<br>Z19<br>C14<br>Z18<br>L6 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>VSUPPLY Z17 C13 0.049 0.046 0.046 0.044 0.044 0.034<br>Description<br> <br>C7 Z16 0.235 0.163 0.065 0.079 0.056 0.060<br>C8 L5<br>C9 Z15 C12<br>C10 C11 Z14 Microstrip Z15 Z16 Z17 Z18 Z19 Z20<br>Z13<br>L3 L4<br>Z12<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z11 DUT 0.300 0.300 0.146 0.146 0.170 0.170 0.049<br>Description<br> <br>Z10<br>0.123 0.029 0.070 0.070 0.153 0.094 0.120<br>R1 Z9<br>Z8<br>C5<br>Z7 Microstrip Z8 Z9 Z10 Z11 Z12 Z13 Z14<br>B1 C4<br>C6<br>Z6<br>C3<br>BIAS<br>V Z5 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>L2<br>0.034 0.046 0.046 0.046 0.044 0.044 0.044<br>Description<br>Z4 <br>C2<br>Figure 10. AFT05MS006NT1 UHF Broadband Reference Circuit Schematic — 440--520 MHz 0.060 0.052 0.105 0.124 0.127 0.093 0.253<br>Z3<br>L1<br>Z2 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7<br>Table 11. AFT05MS006NT1 UHF Broadband Reference Circuit Microstrips — 440--520 MHz<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
10
**TYPICAL CHARACTERISTICS — 440--520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [276 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
20 90<br>VDD = 7.5 Vdc<br>19 P in = 0.15 W 80<br>IDQ = 100 mA D<br>18 ISs 70<br>17 60<br>SE<br>16 SST Gps 50<br>15 es 8<br>14 ae 7<br>13 ae Pout 6<br>12 es 5<br>420 440 460 480 500 520 540<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power**
**==> picture [454 x 384] intentionally omitted <==**
**----- Start of picture text -----**<br>
12<br>f = 480 MHz<br>1.2<br>f = 480 MHz<br>10<br>1.0<br>paoi ttt tty PeGsSSSnnn<br>8 a VDD = 7.5 Vdc, Pin = 0.08 W V4un 0.8 PEEP PLT<br>VDD = 7.5 Vdc<br>6 V DD = 7.5 Vdc, P in = 0.16 W 0.6 P in = 0.16 W<br>Yi | A<br>0.4<br>4<br>AA LTE HEE A+<br>0.2 V DD = 7.5 Vdc<br>2 Pin = 0.08 W<br>CTT) 0 ERE<br>Detail A 0 0.5 1 1.5 2 2.5<br>0 Pa-tortcKt Et tt<br>0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 12. Output Power versus Gate--Source Voltage<br>21 80<br>D<br>20 PT |eer 70<br>19 ae VDD = 7.5 Vdc | 60<br>18 |eaAa 520 MHz e I DQ = 100 mA 50<br>17 480 MHz 40<br>440 MHz<br>16 ZA. Ree IN Baal 30<br>520 MHz<br>15 10<br>14 ra 480 MHz EE 480 MHz SEH P out 8<br>13 ee Nae 6<br>12 4<br>520 MHz<br>11 2<br>440 MHz Gps<br>10 ———a | 2I | |ty 0 ,<br>0.01 0.1 1<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>Pout Pout<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
11
**==> picture [438 x 613] intentionally omitted <==**
**----- Start of picture text -----**<br>
440--520 MHz UHF BROADBAND REFERENCE CIRCUIT<br>oD yw + . - " | 3 J = “ <a ‘ a7,<br>oN O owe \ A i> BQ<br>i oy Sr f = 520 MHz Saesee Sah Zo = 10 > i»<br>SO ~6 Eioe g a SSSIvA SITET\_ + NSas<br>/3 fe /, bysPA Zsource ORLSOK OK KK X55SENS geeee cee 5 |LEAS<br>/ SHY RYE PRESS CK XK KS Oi TT As<br>Lt LPR” PERI.I O AER<br>Fle! | A KsmeerLOLI, f = 440 MHz OLRROSSIsete a nmne eens<br>TEL f LEQ OLE BRL OOS OE EH<br>SL LLP f = 520 MHz f = 440 MHz BI ILRI RESON SSL PH<br>/el Be TALES RY LEER LOR OOS SST<br>Sts] t FA STH 1g BOLE OLR RRS IL EE<br>ers] | st op hoc PERE REO<br>Zload<br>|J aapFe Jeceesssesesssc1/steep BET AT IRON EEE<br>qeem ae onsee a EE TORRES Qn<br>|o sep jensesrssestiiss: Bea CoE TPT be ELL RRS<br>[8 feenaean tei tieae TEETER TAL aby OR<br>satcaisiiiirriz? eeauawerasaiieige @MGgenee SOE SS<br>i") Respretesfcifitiittpmear eens see ME ERE acl PC CE EE ee<br>FEEEEEES cece ovrenerosin Peg ECE EE CL a<br>B\7\: SeseateerstieiittGrcrrcEck aaaertpesemateneueran ASBeen atetepeeereemnc:si SKS OO©<br>VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6 W Avg.<br>f Zsource Zload<br>MHz <br>440 2.46 + j3.15 3.80 + j3.27<br>450 2.30 + j3.23 3.70 + j2.77<br>460 2.11 + j3.35 3.69 + j2.66<br>470 1.90 + j3.48 3.60 + j2.61<br>480 1.71 + j3.72 3.54 + j2.68<br>490 1.56 + j4.01 3.50 + j2.78<br>500 1.43 + j4.37 3.46 + j2.92<br>510 1.33 + j4.75 3.42 + j3.09<br>520 1.28 + j5.10 3.37 + j3.22<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 14. UHF Broadband Series Equivalent Source and Load Impedance — 440--520 MHz**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
12
## **760--870 MHz UHF BROADBAND REFERENCE CIRCUIT**
|**Table 12. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 760--870 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|(In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 100 mA, TA= 25C, CW||||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>760<br>0.12<br>16.6<br>50.4<br>6.0<br>815<br>0.13<br>16.1<br>58.1<br>6.0<br>870<br>0.16<br>15.0<br>60.0<br>6.0<br>~~——————~~||||||
|**Table 13. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||||
|**Frequency**<br>**Signal**|**Pin**|||||
|**(MHz)**<br>**Type**<br>**VSWR**|**(W)**||**Test Voltage, VDD**||**Result**|
|815<br>CW<br>> 65:1 at all|0.4||9.0||No Device|
|Phase Angles|(3 dB Overdrive)||||Degradation|
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
13
**760--870 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [372 x 167] intentionally omitted <==**
**----- Start of picture text -----**<br>
C1 J1 C16<br>° °| | | i n — 4 |} je °<br>C9 C10<br>B1 B2<br>ios Lark C15<br>2) imi C2 ie) a — lore) © d_ [J °<br>C4 R1<br>fe) o © || r | joo} Gs L1 C13 I} |O o fc)<br>3)6 | | 6)(s ° BA ST 00} FS a0 000T00 Bs ? AttO is<br>C5 C7<br>fo) 5 5 f t one E s a OO a)<br>C11<br>5 000 0= hi Q1 m1 = =00 0 Oo5<br>C3 C12 C14<br>O00000 Dm C6 C8 U I] — izO 0000<br>o h<br>0 “eystC4 = 5CO sc |GS 000 60 000 cesi dtb oes i ° °<br>><a<br>ee D55295<br>**----- End of picture text -----**<br>
**Figure 15. AFT05MS006NT1 UHF Broadband Reference Circuit Component Layout — 760--870 MHz**
**Table 14. AFT05MS006NT1 UHF Broadband Reference Circuit Component Designations and Values — 760--870 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2|RF Beads|2743019447|Fair--Rite|
|C1, C5, C6, C7, C8|20 pF Chip Capacitors|GQM2195C2E200GB12D|Murata|
|C2|8.2 pF Chip Capacitor|GQM2195C2E8R2BB12D|Murata|
|C3|10 pF Chip Capacitor|GQM2195C2E100FB12D|Murata|
|C4, C13|56 pF Chip Capacitors|GQM2195C2E560GB12D|Murata|
|C9|1F Chip Capacitor|GRM31MR71H105KA88L|Murata|
|C10|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|C11, C12|15 pF Chip Capacitors|GQM2195C2E150FB12D|Murata|
|C14, C15|5.6 pF Chip Capacitors|GQM2195C2E5R6BB12D|Murata|
|C16|100 pF Chip Capacitor|GQM2195C2E101GB12D|Murata|
|J1|Right--Angle Breakaway Headers (3 pins)|22--28--8360|Molex|
|L1|22 nH Air Core Inductor|0908SQ--22NJL|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT05MS006NT1|Freescale|
|R1|200, 1/8 W Chip Resistor|CRCW0805200RJNEA|Vishay|
|PCB|0.020,r= 4.8, FR4|D55295|MTL|
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
14
**==> picture [379 x 519] intentionally omitted <==**
**----- Start of picture text -----**<br>
|<br>RF<br>OUTPUT<br>Z19<br>Microstrip Microstrip Microstrip Microstrip Microstrip<br>C16 <br>Z18 0.180 0.034 0.034 0.034 0.050<br>Description<br>C15<br> <br>DD<br>V<br>Z17 0.215 0.065 0.430 0.120 0.150<br>C14<br>C10<br>Z16<br>B2 Microstrip Z15 Z16 Z17 Z18 Z19<br>C13 Z15<br>C11<br>C12<br>Z13 Z14<br>L1 Z12<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z11 0.250 0.034 0.034 0.180 0.034 0.034 0.180<br>Description<br> <br>Z8 DUT 0.027 0.066 0.386 0.027 0.160 0.350 0.210<br>R1 Z9<br>Z7<br>Z10 C7 C8<br>Microstrip Z8 Z9 Z10 Z11 Z12 Z13 Z14<br>C4<br>Z6<br>C5 C6<br>B1<br>C9 Z5<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>Z4<br>C3 0.050 0.034 0.034 0.034 0.250 0.250 0.250<br>GS Description<br>V <br>Z3<br>C2 0.150 0.155 0.430 0.065 0.040 0.222 0.130<br>Figure 16. AFT05MS006NT1 UHF Broadband Reference Circuit Schematic — 760--870 MHz<br>Z2<br>C1<br>Z1 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7<br>Table 15. AFT05MS006NT1 UHF Broadband Reference Circuit Microstrips — 760--870 MHz<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
15
**==> picture [311 x 21] intentionally omitted <==**
**----- Start of picture text -----**<br>
TYPICAL CHARACTERISTICS — 760–870 MHz UHF BROADBAND<br>REFERENCE CIRCUIT<br>**----- End of picture text -----**<br>
**==> picture [277 x 172] intentionally omitted <==**
**----- Start of picture text -----**<br>
1918 a 6663<br>17 D VDD = 7.5 Vdc, Pin = 0.20 W 60<br>IDQ = 100 mA<br>16 HETE 57<br>Gps<br>15 a 54<br>14 a 10<br>13 P out 9<br>ee<br>12 a Se a 8<br>11 a 7<br>10 a 6<br>740 760 780 800 820 840 860 880<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 17. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power**
**==> picture [449 x 385] intentionally omitted <==**
**----- Start of picture text -----**<br>
7<br>f = 815 MHz<br>0.7<br>6 V DD = 7.5 Vdc, P in = 0.20 W 0.6 f = 815 MHz VDD = 7.5 Vdc<br>Pin = 0.10 W<br>5 aTTLt) e er e ct<br>0.5<br>VDD = 7.5 Vdc, Pin = 0.10 W<br>4 0.4<br>pf Lh fl ee<br>VDD = 7.5 Vdc<br>0.3<br>3 Pin = 0.20 W<br>0.2<br>2<br>a ee<br>0.1<br>Detail A<br>1<br>po. Y |f/|_ |_| 0 :<br>0 0.4 0.8 1.2 1.6 2<br>0<br>0 po 0.5 ptof | 1 1.5 VY | 2 TT 2.5 3 3.5 a VGS, GATE--SOURCE VOLTAGE (VOLTS) ae<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 18. Output Power versus Gate--Source Voltage<br>21 85<br>VDD = 7.5 Vdc 815 MHz D<br>20 65<br>I DQ = 100 mA<br>19 eean e f = 870 MHz e 45<br>760 MHz<br>18 sn Ban 25<br>760 MHz<br>17 oon == cil 815 MHz | 5<br>16 Ptee 870 MHz RRS TTT! 16<br>15 815 MHz Pout 12<br>14 ATTRTM, 760 MHz a NOVSS 8<br>13 870 MHz G ps 4<br>12 AtI Eaae N alT 0<br>0.004 0.01 0.1 1<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS) out<br>out P<br>P<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 19. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
16
**==> picture [441 x 306] intentionally omitted <==**
VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 6 W Avg.
||||||**f**|||||**Zsource**|**Zsource**|**Zload**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**MHz**||||||||||||
||||||760||||1.42 + j1.30||1.42 + j1.30|1.72 - j0.24|||||
||||||770||||1.37 + j1.21||1.37 + j1.21|1.65 - j0.11|||||
||||||780||||1.21 + j1.16||1.21 + j1.16|1.53 + j0.08|||||
||||||790||||1.10 + j1.17||1.10 + j1.17|1.46 + j0.25|||||
||||||800||||1.09 + j1.19||1.09 + j1.19|1.49 + j0.38|||||
||||||810||||1.17 + j1.24||1.17 + j1.24|1.61 + j0.47|||||
||||||820||||1.33 + j1.27||1.33 + j1.27|1.82 + j0.50|||||
||||||830||||1.42 + j1.22||1.42 + j1.22|1.99 + j0.46|||||
||||||840||||1.35 + j1.14||1.35 + j1.14|1.99 + j0.48|||||
||||||850||||1.12 + j1.10||1.12 + j1.10|1.84 + j0.56|||||
||||||860||||0.90 + j1.08||0.90 + j1.08|1.69 + j0.66|||||
||||||870||||0.77 + j1.10||0.77 + j1.10|1.62 + j0.73|||||
|||||Zsource||=|Test circuit impedance as measured from||||Test circuit impedance as measured from||||||
||||||||gate to ground.||||||||||
|||||Zload||=|Test circuit impedance as measured from||||Test circuit impedance as measured from||||||
||||||||drain to ground.||||||||||
|||||Input||||||Device||Output|||||
|50||||Matching<br>Network||||||Under<br>Test||Matching<br>Network||||50|
||||||||||||||||||
||||||||||||||||||
||||||||||**Zsource**||**Zload**||||||
**Figure 20. UHF Broadband Series Equivalent Source and Load Impedance — 760--870 MHz**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
17
**==> picture [356 x 254] intentionally omitted <==**
**----- Start of picture text -----**<br>
0.28<br>(7.11)<br>0.165<br>(4.91)<br>-<br>a<br>0.089 0.155<br>(2.26) (3.94)<br>Solder pad with _ e e<br>thermal via structure.<br>0.085<br>(2.16)<br>Inches<br>_<br>(mm)<br>**----- End of picture text -----**<br>
**Figure 21. PCB Pad Layout for PLD--1.5W**
**==> picture [80 x 83] intentionally omitted <==**
**----- Start of picture text -----**<br>
A5M06<br>N( )B<br>YYWW<br>**----- End of picture text -----**<br>
**Figure 22. Product Marking**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
18
## **PACKAGE DIMENSIONS**
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
19
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
20
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
21
## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following documents, software and tools to aid your design process.
## **Application Notes**
- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document.
**Revision Date Description** 0 Feb. 2014 Initial Release of Data Sheet ~~ee~~
**AFT05MS006NT1**
RF Device Data Freescale Semiconductor, Inc.
22
## _**How to Reach Us:**_
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Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document.
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc.
**AFT05MS006NT1** & freescale
RF Device DataDocument Number: AFT05MS006N Freescale Semiconductor, Inc.Rev. 0, 2/2014
23
Updated at April 10, 2026
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