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AFT05MS004NT1
RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: NXP
- Product type: RF FETs
- Drain Source Voltage Vds:30VDC; Continuous Drain Current Id:-; Power Dissipation Pd:28W; Operating Frequency Min:136MHz; Operating Frequency Max:941MHz; RF Transistor Case:SOT-89; No. of Pi
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (27-Jun-2024)
- No. of Pins: 3Pins
- Channel Type: N Channel
- Product Range: -
- Power Dissipation: 28W
- Transistor Mounting: Surface Mount
- Transistor Case Style: SOT-89
- Operating Frequency Max: 941MHz
- Operating Frequency Min: 136MHz
- Drain Source Voltage Vds: 30VDC
- Operating Temperature Max: 150°C
- Continuous Drain Current Id: -
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.65 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**Freescale Semiconductor**
Document Number: AFT05MS004N Rev. 0, 7/2014
Technical Data
## **RF Power LDMOS Transistor** High Ruggedness N--Channel Enhancement--Mode Lateral MOSFET
Designed for handheld two--way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this device make it ideal for large--signal, common--source amplifier applications in handheld radio equipment.
## **Narrowband Performance** (7.5 Vdc, TA = 25C, CW)
|**Frequency**|||**Gps**|**Gps**|||**D**||||**Pout**|
|---|---|---|---|---|---|---|---|---|---|---|---|
|**(MHz)**|||**(dB)**||||**(%)**||||**(W)**|
|520 **(1)**|||20.9||||74.9||||4.9|
|**Wideband Performance** (7.5 Vdc, TA= 25||||= 25C, CW)||||||||
|**Frequency**|**Pin**||||**Gps**|||**D**|||**Pout**|
|**(MHz)**|**(W)**||||**(dB)**||**(%)**||||**(W)**|
|136–174 **(2)**|0.10||||17.8||61.8||||6.1|
|350–520 **(3)**|0.12||||15.4||49.4||||4.2|
|**Load Mismatch/Ruggedness**||||||||||||
|**Frequency**<br>**Signal**|||||**Pin**|||**Test**||||
|**(MHz)**<br>**Type**|**VSWR**||||**(W)**|||**Voltage**|||**Result**|
|435**(3)**<br>CW|> 65:1 at all|> 65:1 at all|||0.24|||9.0|||No Device|
||Phase Angles|||(3 dB Overdrive)|(3 dB Overdrive)||||||Degradation|
## **Wideband Performance** (7.5 Vdc, TA = 25C, CW)
## **Load Mismatch/Ruggedness**
1. Measured in 520 MHz narrowband test circuit.
2. Measured in 136–174 MHz VHF broadband reference circuit.
3. Measured in 350–520 MHz UHF broadband reference circuit.
## **AFT05MS004NT1**
**136–941 MHz, 4 W, 7.5 V WIDEBAND RF POWER LDMOS TRANSISTOR**
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SOT--89<br>**----- End of picture text -----**<br>
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Source<br>2<br>1 2 3<br>Gate Source Drain<br>**----- End of picture text -----**<br>
## **Features**
- Characterized for Operation from 136 to 941 MHz
**Figure 1. Pin Connections**
- Unmatched Input and Output Allowing Wide Frequency Range Utilization
- Integrated ESD Protection
- Integrated Stability Enhancements
- Wideband — Full Power Across the Band
- Exceptional Thermal Performance
- Extreme Ruggedness
- In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch Reel.
## **Typical Applications**
- Output Stage VHF Band Handheld Radio
- Output Stage UHF Band Handheld Radio
- Output Stage for 700–800 MHz Handheld Radio
- Driver for 10–1000 MHz Applications
**AFT05MS004NT1** freescale
Freescale Semiconductor, Inc., 2014. All rights reserved.
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
1
## **Table 1. Maximum Ratings**
|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**|||**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage|||VDSS|–0.5, +30|Vdc|
|Gate--Source Voltage|||VGS|–6.0, +12|Vdc|
|Operating Voltage|||VDD|12.5, +0|Vdc|
|Storage Temperature Range|||Tstg|–65 to +150|C|
|Case Operating Temperature Range|||TC|–40 to +150|C|
|Operating Junction Temperature Range **(1,2)**|||TJ|–40 to +150|C|
|Total Device Dissipation @ TC= 25C|||PD|28|W|
|Derate above 25C||||0.23|W/C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 79C, 4.0 W CW, 7.5 Vdc, IDQ= 100 mA, 520 MHz<br>RJC<br>4.4<br>C/W<br>~~ee~~||||||
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>1C, passes 1000 V<br>Machine Model (per EIA/JESD22--A115)<br>A, passes 100 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>1<br>260<br>C<br>~~=~~||||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)||||||
|**Characteristic**||**Symbol**|**Min**|**Typ**<br>**Max**|**Unit**|
|**Off Characteristics**||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 30 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 7.5 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>1<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>500<br>nAdc<br>~~ae~~||||||
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 67Adc)<br>VGS(th)<br>1.7<br>2.2<br>2.5<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 700 mAdc)<br>VDS(on)<br>—<br>.22<br>—<br>Vdc<br>Forward Transconductance<br>(VDS= 7.5 Vdc, ID= 4.0 Adc)<br>gfs<br>—<br>4.0<br>—<br>S<br>~~Se~~||||||
|**Dynamic Characteristics**||||||
|Reverse Transfer Capacitance<br>(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Crss<br>—<br>1.63<br>—<br>pF<br>Output Capacitance<br>(VDS= 7.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)<br>Coss<br>—<br>34.8<br>—<br>pF<br>Input Capacitance<br>(VDS= 7.5 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)<br>Ciss<br>—<br>57.6<br>—<br>pF<br>~~aan~~||||||
|1. Continuous use at maximum temperature will affect MTTF.||||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF||||Select Software & Tools/Development Tools/Calculators to access MTTF||
|calculators by product.||||||
3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955.
(continued)
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
2
**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)**
**Characteristic Symbol Min Typ Max Unit** ~~a~~ **Functional Tests** (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 7.5 Vdc, IDQ = 100 mA, Pin = 16 dBm, f = 520 MHz Common--Source Amplifier Output Power Pout — 4.9 — W Drain Efficiency D — 74.9 — % ~~————ee ee ee ee ee~~
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
3
## **TYPICAL CHARACTERISTICS**
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100<br>Ciss<br>——<br>OrrCC<br>TE<br>tt Coss<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>10<br>[_<br>se<br>a<br>a<br>Crss<br>1 ee a ee ee ee ee<br>0 2 4 6 8 10 12<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Figure 2. Capacitance versus Drain--Source Voltage<br>10 [9]<br>seee<br>VDD = 7.5 Vdc<br>ID = 0.62 Amps<br>————<br>10 [8] r e e ee eee<br>0.77 Amps<br>10 [7]<br>a oo 0.91 Amps<br>Es es<br>a<br>10 [6] aeeee<br>90 100 110 120 130 140 150 160<br>TJ, JUNCTION TEMPERATURE (C)<br>Note: MTTF value represents the total cumulative operating time<br>under indicated test conditions.<br>MTTF calculator available at http://www.freescale.com/rf. Select<br>Software & Tools/Development Tools/Calculators to access MTTF<br>calculators by product.<br>C, CAPACITANCE (pF)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>
**Figure 2. Capacitance versus Drain--Source Voltage**
**Figure 3. MTTF versus Junction Temperature — CW**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
4
## **520 MHz NARROWBAND PRODUCTION TEST FIXTURE**
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|AFT05MS004N|
|s-*|f|reescale”|D57923|Rev. 0|
|semiconductor|
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|Figure 4. AFT05MS004NT1 Narrowband Test Circuit Component Layout — 520 MHz|
|Table 6. AFT05MS004NT1 Narrowband Test Circuit Component Designations and Values — 520 MHzponent Designations and Values — 520 MHzonent Designations and Values — 520 MHzgnations and Values — 520 MHznations and Values — 520 MHz|
|Part|Description|Part Number|Manufacturer|
|B1|RF Bead, Short|2743019447|Fair--Rite|
|C1|22 F, 35 V Tantalum Capacitor|T491X226K035AT|Kemet|
|C2, C11|0.1 F Chip Capacitors|CDR33BX104AKWS|AVX|
|C3, C10|0.01 F Chip Capacitors|C0805C103K5RAC|Kemet|
|C4, C9|180 pF Chip Capacitors|ATC100B181JT300XT|ATC|
|C5|11 pF Chip Capacitor|ATC100B110JT500XT|ATC|
|C6, C7|13 pF Chip Capacitors|ATC100B130JT500XT|ATC|
|C8, C15|2.2 pF Chip Capacitors|ATC100B2R2JT500XT|ATC|
|C12|330 F, 35 V Electrolytic Capacitor|MCGPR35V337M10X16--RH|Multicomp|
|C13, C14|16 pF Chip Capacitors|ATC100B160JT500XT|ATC|
|C16|9.1 pF Chip Capacitor|ATC100B9R1CT500XT|ATC|
|L1|8.0 nH, 3 Turn Inductor|A03TKLC|Coilcraft|
|L2|5 nH, 2 Turn Inductor|A02TKLC|Coilcraft|
|R1, R2, R3, R4, R5|1.5 , 1/4 W Chip Resistors|RC1206FR--071R5L|Yageo|
|R6|27 , 1/4 W Chip Resistor|CRCW120627R0FKEA|Vishay|
|PCB|Rogers RO4350, 0.030, r|= 3.66|D57923|MTL|
**----- End of picture text -----**<br>
**Table 6. AFT05MS004NT1 Narrowband Test Circuit Component Designations and Values — 520 MHzponent Designations and Values — 520 MHzonent Designations and Values — 520 MHzgnations and Values — 520 MHznations and Values — 520 MHz**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
5
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r<br>;<br><. ll<br>RF<br>OUTPUT<br>Z16<br>C16<br>Z15<br>C8<br>SUPPLY Z14<br>V<br>L2<br>+ C12<br>Taper Microstrip<br><br>Z13<br>C11 3 C14 Description Microstrip Microstrip 0.320 Microstrip Microstrip Microstrip Microstrip Microstrip<br>C1 <br>Z12<br>C10<br>0.620 0.620 0.620 0.320 0.320 0.120 0.120 0.080<br>Z11<br> <br>C9<br>Z10<br>L1 C15 0.708 0.062 0.162 0.377 0.055 0.587 0.078 0.238<br>Z9<br>Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16<br>DUT<br>Z8<br>R1 R2 R3 R4 R5<br>Z7 Taper Microstrip<br><br>0.620<br>R6 Description Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z6 <br>C4 Z5 0.080 0.120 0.320 0.320 0.320 0.620 0.620 0.620<br> <br>Figure 5. AFT05MS004NT1 Narrowband Test Circuit Schematic — 520 MHz<br>Z4<br>B1 C6 0.328 0.490 0.055 0.555 0.160 0.045 0.387 0.273<br>C7<br>Z3<br>C3<br>C5 Microstrip Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8<br>Table 7. AFT05MS004NT1 Narrowband Test Circuit Microstrips — 520 MHz<br>C2<br>Z2<br>+ C1<br>Z1<br>BIAS RF<br>V INPUT<br>**----- End of picture text -----**<br>
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
6
**TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND REFERENCE CIRCUIT**
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6<br>VDD = 7.5 Vdc, f = 520 MHz<br>Po<br>5<br>4<br>Pin = 0.04 W<br>3 ee ae<br>2 Ptf fAZ]<br>Pin = 0.02 W<br>Pf<br>1<br>0 | |wrLs YZ<br>1 1.5 2 2.5 3 3.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 6. Output Power versus Gate--Source Voltage<br>2421 Te 9080<br>Gps<br>18 a. 70<br>15 ey ae 60<br>12 FT EEE 50<br>9 > eeee 40<br>D<br>6 30<br>3 Pout VDD = 7.5 Vdc, IDQ = 100 mA 20<br>f = 520 MHz<br>0 A 10<br>0 0.02 0.04 0.06 0.08 0.1<br>Pin, INPUT POWER (WATTS)<br>Figure 7. Power Gain, Drain Efficiency and Output<br>Power versus Input Power<br>VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W<br>f Zsource Zload<br>MHz <br>520 1.35 + j2.15 2.10 + j1.70<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>_L e o b<br>Zsource Zload<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)<br>out D<br>P<br>**----- End of picture text -----**<br>
**Figure 8. Narrowband Series Equivalent Source and Load Impedance — 520 MHz**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
7
## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT**
|**Table 8. 136–174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136–174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136–174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 136–174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 100 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>135<br>0.10<br>17.8<br>62.3<br>6.0<br>155<br>0.06<br>20.2<br>69.1<br>6.0<br>175<br>0.10<br>17.9<br>61.8<br>6.0<br>~~——————~~||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**|**Pin**|||
|**(MHz)**<br>**Type**|**VSWR**<br>**(W)**<br>**Test Voltage, VDD**||**Result**|
|155<br>CW|> 65:1 at all<br>0.2<br>9.0||No Device|
||Phase Angles<br>(3 dB Overdrive)||Degradation|
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
8
## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT**
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J1<br>C11 C12<br>aie) | C1 fe)e) Q (a[e[e| » fe)O | re)<br>O| Fo fe) fe) | e) C10<br>0) e)|e LOX C13 C14 C15 | | | L4 + C16 @)= C17 C18 O| E e C9<br>o© OoO° eeini| 5 5) E+] eeTt ofoL ofL_th TL Oo[2 L6<br>C2 of I] o eo 2909 |_| fo o| [—WI]O] = [0][0][0][0] OC} IS<br>— ie) o<S¢ ry fete. _— fe) O <T 6 C8<br>C3<br>R1 Q1<br>L1<br>F A 00 P0000 i—h 00000] E t °<br>C4 L3 L5<br>L2<br>att |] ¢§———_ — | ae ©<br>C7<br>CAA : :<br>CST C5 C6 ypoes O <eec yeeee<br>5 0fe) °Ob S555 5506?<br>D61839 000000 AFT05MS004N Rev. 0 (136 – 174 MHz)<br>**----- End of picture text -----**<br>
**Figure 9. AFT05MS004NT1 VHF Broadband Reference Circuit Component Layout — 136–174 MHz**
**Table 10. AFT05MS004NT1 VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1, C10, C14, C17|1 nF Chip Capacitors|2012X7R2E102M|TDK|
|C2|39 pF Chip Capacitor|ATC600F390JT250XT|ATC|
|C3, C8|56 pF Chip Capacitors|ATC600F560JT250XT|ATC|
|C4, C5|68 pF Chip Capacitors|ATC600F680JT250XT|ATC|
|C6, C15, C16|100 pF Chip Capacitors|ATC600F101JT250XT|ATC|
|C7|150 pF Chip Capacitor|ATC600F151JT250XT|ATC|
|C9|8.2 pF Chip Capacitor|ATC600F8R2BT250XT|ATC|
|C11, C12|10F, 50 V Electrolytic Capacitors|UVR1H100MDD|Nichicon|
|C13, C18|1F Chip Capacitors|GRM21BR71H105KA12L|Murata|
|J1|Breakaway Header, Right--Angle 3 Pins|22-28-8360|Molex|
|L1|13.7 nH Inductor|0807SQ14N|Coilcraft|
|L2|12.3 nH Inductor|0806SQ12N|Coilcraft|
|L3, L4|25.0 nH Inductors|0908SQ25N|Coilcraft|
|L5|15.7 nH Inductor|0806SQ16N|Coilcraft|
|L6|27.3 nH Inductor|0908SQ27N|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT05MS004NT1|Freescale|
|R1|33, 1/10 W Chip Resistor|CRCW080533R0JNEA|Vishay|
|PCB|0.020,r = 4.8, FR4(S--1000)|D61839|MTL|
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
9
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;<br>-<br>RF<br>OUTPUT<br>Z22<br>C10<br>Z21<br>C9<br>Z20<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>SUPPLY L6 0.170 0.050 0.050 0.050 0.050 0.050 0.050<br>V Z19 Description <br>+ C12 C8<br>0.015 0.357 0.010 0.010 0.010 0.010 0.120<br>Z18<br>C18<br>C17 L5<br>C16 Z17 C7 Microstrip Z16 Z17* Z18 Z19 Z20 Z21 Z22<br>Z15 L4 Z14 L3 Z16<br>Z13 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>Z12 DUT 0.300 0.300 0.140 0.140 0.170 0.084 0.040<br>Description<br> <br>0.070 0.032 0.070 0.070 0.015 0.030 0.040<br>Z11<br>R1 Z10<br>C15 Z9 Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15<br>C14 L2<br>C13 Z8 C6<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>+ C11 Z7 <br>C5 0.050 0.050 0.050 0.050 0.050 0.050 0.040 0.040<br>Description<br>Z6 <br>BIAS C4<br>V<br>Z5 0.120 0.142 0.010 0.012 0.010 0.010 0.012 0.265<br>L1 Figure 10. AFT05MS004NT1 VHF Broadband Reference Circuit Schematic — 136–174 MHz<br>Z4 C3 Table 11. AFT05MS004NT1 VHF Broadband Reference Circuit Microstrips — 136–174 MHz Microstrip Z1 Z2 Z3 Z4 Z5 Z6* Z7 Z8 * Line length includes microstrip bends<br>Z3<br>C2<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
10
**TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT**
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22 90<br>21 80<br>20 eeee D 70<br>19 60<br>Serr<br>18 eeSs 50<br>Gps<br>17 Po ee ee ee 8<br>16 | | |tThvE h| | | 7<br>15 LT V P DD in = 0.1 W = 7.5 Vdc PP Pout 6<br>14 | | I DQ = 100 mA | | 5<br>13 4<br>| | [ot]<br>135 140 145 150 155 160 165 170 175<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 11. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Pin**
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**----- Start of picture text -----**<br>
6<br>f = 155 MHz<br>1<br>f = 155 MHz<br>5<br>0.8<br>4 ee VDD = 7.5 Vdc, Pin = 0.1 W ee VDD = 7.5 Vdc<br>0.6 Pin = 0.1 W<br>3 pi [i<br>| VDD = 7.5 Vdc, P | in = 0.05 W ts 0.4 VDD = 7.5 Vdc IT<br>2 Pin = 0.05 W<br>ee sae 0.2 LI<br>1<br>Detail A 0<br>0 0.5 1 1.5 2 2.5<br>0 pttepA_ —| lt | I —| pT 4<br>0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>Pout Pout<br>**----- End of picture text -----**<br>
**Figure 12. Output Power versus Gate--Source Voltage**
**==> picture [278 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
25 80<br>24 VDD = 7.5 Vdc 155 MHz D 70<br>23 I DQ = 100 mA 60<br>22 175 MHz 50<br>21 ee a= a 135 MHz 40<br>20 ss 2.4 | 30<br>19 155 MHz 20<br>18 peSS [| [|] 10 3<br>17 175 MHz P out 8<br>16 oe 135 MHz LTRS AL 7<br>15 ——| |Hi|_| pS Gps 6<br>14 155 MHz 5<br>13 175 MHz 4<br>12 pT Nea| 3<br>11 135 MHz 2<br>10 Eert ee 1<br>9 eeHf [OOO] fe HEE ee 0 3<br>0.01 0.1 0.3<br>Pin, INPUT POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 13. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
11
## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT**
**==> picture [442 x 212] intentionally omitted <==**
**----- Start of picture text -----**<br>
f = 175 MHz Zo = 25 <br>KPof fe Komi»BOSS55Xx) f = 135 MHz 00sSAS<S A SSE e —— SIT Le <on%<br>QERLLERK SSS TS<br>BLEED x T CT RSS<br>/ LYS Se SXO rer TAOS<br>TE REEL Zsource TON, Mectetetienc gtvebeetet Gmmns nas:<br>ISLPAIfe Ie EERERELL BEIEERE PSSLR SkeSLLLLLmuses<br>eT]Teh bdHOLT RRS oS eH<br>Sf /8f ABPELE OAR SIE<br>2 yi te maaetan eae ee<br>ef hk FPET ERT DR<br>gf [of Hyi: Ree eereliewmeeletnseer<br>afte 8 os Zload eeeee ereeteeoeanninc cam of<br>g PtHeigaHEEeiiuaie Perreeststtuueerstiiceeaia:<br>W e eee eerererereeemsiris geese) ate<br>f = 175 MHz S| 1st Pata tariel EEEEEETEE CLP Oy<br>f = 135 MHz<br>**----- End of picture text -----**<br>
VDD = 7.5 Vdc, IDQ = 100 mA, Pout = 4 W
||||||**f**||||**Zsource**||**Zload**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
||||||**MHz**|||||||||||
||||||135||||7.02 + j13.05|2.24 - j1.21||||||
||||||140||||8.07 + j13.00|2.42 - j0.87||||||
||||||145||||9.05 + j12.43|2.56 - j0.54||||||
||||||150||||9.68 + j11.26|2.79 - j0.24||||||
||||||155||||9.16 + j9.82|3.08 - j0.07||||||
||||||160||||7.39 + j9.21|3.23 - j0.03||||||
||||||165||||5.83 + j10.15|3.52 - j0.09||||||
||||||170||||5.09 + j11.62|3.77 - j0.01||||||
||||||175||||5.06 + j12.97|3.40 - j0.27||||||
|||||Zsource||=|Test circuit impedance as measured from|||||||||
||||||||gate to ground.|||||||||
|||||Zload||=|Test circuit impedance as measured from|||||||||
||||||||drain to ground.|||||||||
|||||Input|||||Device||Output|||||
|50||||Matching<br>Network|||||Under<br>Test||Matching<br>Network||||50|
|||||||||||||||||
|||||||||||||||||
||||||||||**Zsource**<br>**Zload**|||||||
**Figure 14. VHF Broadband Series Equivalent Source and Load Impedance — 136–174 MHz**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
12
## **350–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
|**Table 12. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 12. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|(In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|---|---|
|VDD= 7.5 Volts, IDQ= 50 mA, TA= 25C, CW||||||
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(W)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>350<br>0.11<br>15.5<br>48.7<br>4.0<br>470<br>0.04<br>19.8<br>67.7<br>4.0<br>520<br>0.09<br>16.3<br>71.1<br>4.0<br>~~——————~~||||||
|**Table 13. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||||
|**Frequency**<br>**Signal**|**Pin**|||||
|**(MHz)**<br>**Type**<br>**VSWR**|**(W)**||**Test Voltage, VDD**||**Result**|
|435<br>CW<br>> 65:1 at all|0.24||9.0||No Device|
|Phase Angles|(3 dB Overdrive)||||Degradation|
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
13
## **350–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [377 x 206] intentionally omitted <==**
**----- Start of picture text -----**<br>
J1<br>B1 B2<br>O C6 C7 O<br>C1 |° FA foo| | L COo000td Ly | IE IS 00000 | o|Jo Fy° C12<br>L1 ie)roO] e | | fo)|eO C5 a n R1 © of Oo eS — C8 |q hL L5 FO C11<br>° Fj Jo | © OC} E4 || of ] |°<br>L3<br>fo) pl o5 C2 cogooa tdo o ] 5 8 [hh foO otSlooo00 6q ni ° C10<br>Q1<br>R2<br>L4<br>L2 ° F It R|oodoo000oe — 7 a opsod t °<br>5 I |° PSA O oO 0 CO)o| gF Y 5<br>C4 C9<br>5 e a e WU p ea l 5<br>C3<br>fe) | 6 fe)<br>os o jooes° © °°°0556000000Foc yoooo®<br>o fe)<br>D56664 O00000 AFT05MS004N Rev. 0 (350 – 520 MHz)<br>**----- End of picture text -----**<br>
**Figure 15. AFT05MS004NT1 UHF Broadband Reference Circuit Component Layout — 350–520 MHz**
**Table 14. AFT05MS004NT1 UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz**
|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2|RF Beads|2743019447|Fair--Rite|
|C1, C10|18 pF Chip Capacitors|GQM2195C2E180FB12D|Murata|
|C5, C8, C12|100 pF Chip Capacitors|GQM2195C2E101GB12D|Murata|
|C2, C3|15 pF Chip Capacitors|GQM2195C2E150FB12D|Murata|
|C4|56 pF Chip Capacitor|GQM2195C2E560GB12D|Murata|
|C6|1F Chip Capacitor|GRM31CR72A105KA01L|Murata|
|C7|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|C9|39 pF Chip Capacitor|GQM2195C2E390GB12D|Murata|
|C11|5.1 pF Chip Capacitor|GQM2195C2E5R1BB12D|Murata|
|J1|Breakaway Header, Right--Angle 3 Pins|22-28-8360|Molex|
|L1, L2|5.5 nH Inductors|0806SQ5N5|Coilcraft|
|L3|16.6 nH Inductor|0908SQ17N|Coilcraft|
|L4|2.55 nH Inductor|0906--3JLC|Coilcraft|
|L5|8.1 nH Inductor|0908SQ8N1|Coilcraft|
|Q1|RF Power LDMOS Transistor|AFT05MS004NT1|Freescale|
|R1, R2|22, 1/10 W Chip Resistors|RR1220Q--220--D|Susumu|
|PCB|0.020,r = 4.8, FR4(S--1000)|D56664|MTL|
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
14
**==> picture [350 x 637] intentionally omitted <==**
**----- Start of picture text -----**<br>
_<br>RF<br>OUTPUT<br>Z24<br>C12<br>Z23<br>C11<br>Z22 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>L5<br>0.170 0.050 0.050 0.050 0.050 0.050 0.050 0.050<br>Description<br>SUPPLY <br>V Z21 C10 0.190 0.150 0.270 0.070 0.070 0.050 0.050 0.150<br>C7 Z20<br>B2 L4<br>C8 Microstrip Z17 Z18 Z19* Z20 Z21 Z22 Z23 Z24<br>Z19 C9<br>Z16 Z18<br>L3 Z15 Z17<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>Z14 0.060 0.034 0.300 0.140 0.140 0.170 0.060 0.034<br>Description<br> <br>Z13<br>0.140 0.065 0.057 0.070 0.070 0.057 0.140 0.200<br>DUT<br>Z12<br>Microstrip Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16<br>R1 Z9 R2 Z11<br>Z8<br>Z10<br>Z7<br>C5<br>C4 Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br> <br>B1 Z6 0.050 0.050 0.050 0.050 0.050 0.050 0.300<br>C3 Description x 0.050<br>C6 <br>Z5 0.150 0.090 0.070 0.070 0.090 0.160 0.260 0.095<br>BIAS L2<br>V<br>Z4 Figure 16. AFT05MS004NT1 UHF Broadband Reference Circuit Schematic — 350–520 MHz<br>C2<br>Table 15. AFT05MS004NT1 UHF Broadband Reference Circuit Microstrips — 350–520 MHz Microstrip Z1 Z2 Z3 Z4 Z5* Z6* Z7 Z8 * Line length includes microstrip bends<br>Z3<br>L1<br>Z2<br>C1<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
15
## **TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [276 x 174] intentionally omitted <==**
**----- Start of picture text -----**<br>
20 80<br>D<br>19 70<br>pf | |be<br>18 P| tae] | tt tt 60<br>17 50<br>pip |<br>16 40<br>| ta | | |Prt Gps<br>15 pet tt 7<br>1413 Ppmma| |Peet| 65<br>12 V P DD in = 0.12 W = 7.5 Vdc Pout 4<br>| + | | Sa| |<br>IDQ = 50 mA<br>11 | tt | tt|N 3<br>340 360 380 400 420 440 460 480 500 520 540<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 17. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant at a Constant Pin**
**==> picture [451 x 384] intentionally omitted <==**
**----- Start of picture text -----**<br>
6<br>f = 435 MHz<br>1.0<br>f = 435 MHz<br>5<br>0.8<br>4 V DD = 7.5 Vdc, P in = 0.12 W 0.6 VPDDin = = 7.5 Vdc 0.06 W<br>3 V DD = 7.5 Vdc, P in = 0.06 W y| f\ VDD = 7.5 Vdc<br>0.4 Pin = 0.12 W<br>2 WANA<br>PSO 0.2<br>1 £|<br>0<br>Detail A<br>0 0.5 1 1.5 2<br>eeea4<br>0<br>0 0.5 1 1.5 2 2.5 3 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 18. Output Power versus Gate--Source Voltage<br>25 80<br>24 VDD = 7.5 Vdc 435 MHz D 70<br>23 IDQ = 50 mA 350 MHz 60<br>22 520 MHz 50<br>21 a eeroofeeibs 40<br>20 att 435 MHz ee 30<br>19 ws Eee | 20<br>18 eeeee 10<br>17 520 MHz EAL EP 7<br>16 po ee P out 6<br>15 350 MHz 435 MHz SSS 5<br>14 Gps 4<br>1213 a— AT | | | ge 350 MHz S||| 32<br>520 MHz<br>11 | Cr | 1<br>10 ee ee ee eeee| 0<br>0.01 0.1 0.3<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS) , OUTPUT POWER (WATTS)<br>Pout Pout<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>
**Figure 19. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
16
## **350–520 MHz UHF BROADBAND REFERENCE CIRCUIT**
**==> picture [384 x 205] intentionally omitted <==**
**----- Start of picture text -----**<br>
(So 8 4 a <x (\F XT 4 | PT<br>f = 520 MHz<br>YUP Sn xo EEE<br>BR EE MSCSSAA<br>he FL OLE Zsource ELON OOO ITI Zo = 5 OE<br>BIL LAO LEER ERM RK REO ORC SS A<br>ef,|8 el PEE TT RI ILO LLLP P SSE<br>| Hse TE f = 350 MHz PLAIDE LOR LSS<br>f = 520 MHz<br>Wie tears me MN ee Oosees ae<br>ee]af[‘] PRaceeeestesee EERE TT IRE D L<br>| HEareee Zload<br>Mls er ee eh<br>“| Greeti et seeec ones cite persPevmeerstsrt ease!<br>EEECEEEEEEEE Resisrauce, cousonent (#5), of conpucrance couibarat(f) ans an<br>f = 350 MHz<br>stil] FEEPeco eee Oe ee CEDs<br>**----- End of picture text -----**<br>
VDD = 7.5 Vdc, IDQ = 50 mA, Pout = 4 W
**==> picture [273 x 399] intentionally omitted <==**
**----- Start of picture text -----**<br>
f Zsource Zload<br>MHz <br>350 2.27 - j1.72 3.55 + j1.20<br>eeee<br>360 2.41 - j1.91 3.61 + j0.92<br>ee ee<br>370 2.55 - j2.11 3.66 + j0.64<br>eeee<br>380 2.68 - j2.31 3.71 + j0.36<br>es ee ee<br>390 2.74 - j2.38 3.71 + j0.15<br>eeee<br>400 2.76 - j2.36 3.69 + j0.02<br>ee ee ee<br>410 ee 2.77 - j2.35 3.66 + j0.18<br>ee ee ee<br>420 2.78 - j2.35 3.67 + j0.34<br>ee ee<br>430 2.78 - j2.43 3.82 + j0.48<br>ee ee<br>440 2.79 - j2.50 3.97 + j0.62<br>ee ee<br>450 2.79 - j2.57 4.13 + j0.76<br>ee ee<br>460 ee 2.44 - j2.70 4.00 + j0.95<br>ee ee<br>470 2.02 - j2.84 3.80 + j1.15<br>ee ee<br>480 1.59 - j2.98 3.61 + j1.36<br>eeee<br>490 1.37 - j3.20 3.53 + j1.46<br>es ee ee<br>500 1.45 - j3.53 3.62 + j1.41<br>ee ee<br>510 ee 1.52 - j3.86 3.71 + j1.36<br>ee ee<br>520 1.60 - j4.19 3.80 + j1.31<br>ee ee ee<br>Zsource = Test circuit impedance as measured from<br>gate to ground.<br>Zload = Test circuit impedance as measured from<br>drain to ground.<br>Input Device Output<br>Matching Under Matching<br>Network Test Network<br>50 50 <br>Zsource Zload<br>**----- End of picture text -----**<br>
**Figure 20. UHF Broadband Series Equivalent Source and Load Impedance — 350–520 MHz**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
17
**==> picture [255 x 428] intentionally omitted <==**
**----- Start of picture text -----**<br>
1.90<br>3.00<br>2X 4.35<br>45<br>2X<br>1.25<br>3X<br>0.70<br>0.85<br>2X<br>yf 1.50<br>Figure 21. PCB Pad Layout for SOT--89A<br>AFT504<br>AWLYWZ<br>—<br>**----- End of picture text -----**<br>
**Figure 22. Product Marking**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
18
## **PACKAGE DIMENSIONS**
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
19
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
20
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
21
## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS**
Refer to the following documents, software and tools to aid your design process.
## **Application Notes**
- AN1955: Thermal Measurement Methodology of RF Power Amplifiers
## **Engineering Bulletins**
- EB212: Using Data Sheet Impedances for RF LDMOS Devices
## **Software**
- Electromigration MTTF Calculator
- RF High Power Model
- .s2p File
## **Development Tools**
- Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool.
## **REVISION HISTORY**
The following table summarizes revisions to this document. **Revision Date Description** 0 July 2014 Initial Release of Data Sheet ~~pp~~
**AFT05MS004NT1**
RF Device Data Freescale Semiconductor, Inc.
22
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Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2014 Freescale Semiconductor, Inc.
**AFT05MS004NT1** & freescale
RF Device DataDocument Number: AFT05MS004N Freescale Semiconductor, Inc.Rev. 0, 7/2014
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Updated at April 10, 2026
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