AFT05MP075NR1

RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:40V; Continuous Drain Current Id:-; Power Dissipation Pd:690W; Operating Frequency Min:136MHz; Operating Frequency Max:520MHz; RF Transistor Case:TO-270WB; N
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 4Pins
Channel Type: N Channel
Product Range: AFT05MP075N
Power Dissipation: 690W
Transistor Mounting: Flange
Transistor Case Style: TO-270WB
Operating Frequency Max: 520MHz
Operating Frequency Min: 136MHz
Drain Source Voltage Vds: 40V
Operating Temperature Max: 150°C
Continuous Drain Current Id: -
Delivery and price
Units per pack	100
Price	23.89 €
Current stock	200+
Lead time	30 days
Datasheet
**Freescale Semiconductor** Technical Data 

Document Number: AFT05MP075N Rev. 1, 8/2014 

## **RF Power LDMOS Transistors** 

## High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs 

Designed for mobile two--way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of these devices make them ideal for large--signal, common source amplifier applications in mobile radio equipment. 

**Typical Performance:** 12.5 V, TA = 25C, CW 

|**Frequency**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>136 MHz<br>21.0<br>68.0<br>76<br>450--520 MHz **(1)**<br>14.6<br>65.8<br>75<br>520 MHz **(2)**<br>18.5<br>68.5<br>70<br>~~——_—~~|
|---|
|**Load Mismatch/Ruggedness**<br>**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test**<br>**Voltage**<br>**Result**<br>520 **(2)**<br>CW<br>> 65:1 at all<br>Phase Angles<br>2<br>(3 dB Overdrive)<br>17<br>No Device<br>Degradation<br>1. Measured in 450--520 MHz UHF broadband reference circuit.<br>~~EE~~<br>~~EE=~~|
|2. Measured in 520 MHz narrowband test circuit.|



## **Features** 

## **AFT05MP075NR1 AFT05MP075GNR1** 

**136–520 MHz, 70 W, 12.5 V BROADBAND RF POWER LDMOS TRANSISTORS** 

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TO--270WB--4<br>AFT05MP075NR1<br>TO--270WBG--4<br>AFT05MP075GNR1<br>**----- End of picture text -----**<br>


- Characterized for Operation from 136 to 520 MHz 

- Unmatched Input and Output Allowing Wide Frequency Range Utilization 

- Integrated ESD Protection 

- Integrated Stability Enhancements 

- Wideband — Full Power Across the Band 

- Exceptional Thermal Performance 

- Extreme Ruggedness 

- High Linearity for: TETRA, SSB, LTE 

- In Tape and Reel. R1 Suffix = 500 Units, 44 mm Tape Width, 13--inch Reel. 

## **Typical Applications** 

- Output Stage VHF Band Mobile Radio 

- Output Stage UHF Band Mobile Radio 

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Gate A Drain A<br>‘ia :<br>Gate B Drain B<br>{ eat<br>(Top View)<br>Note: Exposed backside of the package is<br>the source terminal for the transistors.<br>Figure 1. Pin Connections<br>**----- End of picture text -----**<br>


 Freescale Semiconductor, Inc., 2013–2014. All rights reserved. **AFT05MP075NR1 AFT05MP075GNR1** ~~a =freescale~~ 

**AFT05MP075NR1 AFT05MP075GNR1** Airfast 1 

RF Device Data Freescale Semiconductor, Inc. 

## **Table 1. Maximum Ratings** 

|**Table 1. Maximum Ratings**||||||
|---|---|---|---|---|---|
|**Rating**|||**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage|||VDSS|--0.5, +40|Vdc|
|Gate--Source Voltage|||VGS|--6.0, +12|Vdc|
|Operating Voltage|||VDD|17, +0|Vdc|
|Storage Temperature Range|||Tstg|--65 to +150|C|
|Case Operating Temperature Range|||TC|–40 to +150|C|
|Operating Junction Temperature Range **(1,2)**|||TJ|–40 to +225|C|
|Total Device Dissipation @ TC= 25C|||PD|690|W|
|Derate above 25C||||3.45|W/C|
|**Table 2. Thermal Characteristics**||||||
|**Characteristic**<br>**Symbol**<br>**Value (2,3)**<br>**Unit**<br>Thermal Resistance, Junction to Case<br>Case Temperature 80C, 70 W CW, 12.5 Vdc, IDQ(A+B)= 400 mA, 520 MHz<br>RJC<br>0.29<br>C/W<br>~~ee~~||||||
|**Table 3. ESD Protection Characteristics**||||||
|**Test Methodology**<br>**Class**<br>Human Body Model (per JESD22--A114)<br>2, passes 2500 V<br>Machine Model (per EIA/JESD22--A115)<br>A, passes 250 V<br>Charge Device Model (per JESD22--C101)<br>IV, passes 2000 V<br>**Table 4. Moisture Sensitivity Level**<br>**Test Methodology**<br>**Rating**<br>**Package Peak Temperature**<br>**Unit**<br>Per JESD22--A113, IPC/JEDEC J--STD--020<br>3<br>260<br>C<br>~~oO~~||||||
|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise noted)||||||
|**Characteristic**||**Symbol**|**Min**|**Typ**<br>**Max**|**Unit**|
|**Off Characteristics**||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 40 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>3<br>Adc<br>Zero Gate Voltage Drain Leakage Current<br>(VDS= 12.5 Vdc, VGS= 0 Vdc)<br>IDSS<br>—<br>—<br>2<br>Adc<br>Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)<br>IGSS<br>—<br>—<br>600<br>nAdc<br>~~ae~~||||||
|**On Characteristics**||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 295Adc)<br>VGS(th)<br>1.7<br>2.1<br>2.5<br>Vdc<br>Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 3.0 Adc)<br>VDS(on)<br>—<br>0.14<br>—<br>Vdc<br>Forward Transconductance **(4)**<br>(VGS= 10 Vdc, ID= 8 Adc)<br>gfs<br>—<br>7.3<br>—<br>S<br>~~arene~~||||||
|1. Continuous use at maximum temperature will affect MTTF.||||||
|2. MTTF calculator available athttp://www.freescale.com/rf<br>.Select Software & Tools/Development Tools/Calculators to access MTTF||||Select Software & Tools/Development Tools/Calculators to access MTTF||
|calculators by product.||||||



3. Refer to AN1955, _Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.freescale.com/rf. Select Documentation/Application Notes -- AN1955. 

4. Each side of device measured separately. 

(continued) 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) **(continued)** 

|**Characteristic**<br>**Symbol**<br>**Min**<br>**Typ**<br>**Max**<br>**Unit**|
|---|
|**Dynamic Characteristics (1)**|
|Reverse Transfer Capacitance<br>Crss<br>—<br>2.3<br>—<br>pF|
|(VDS= 12.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|
|Output Capacitance<br>Coss<br>—<br>64<br>—<br>pF|
|(VDS= 12.5 Vdc30 mV(rms)ac @ 1 MHz, VGS= 0 Vdc)|
|Input Capacitance<br>Ciss<br>—<br>148<br>—<br>pF|
|(VDS= 12.5 Vdc, VGS= 0 Vdc30 mV(rms)ac @ 1 MHz)|
|**Functional Tests (2)** (In Freescale Test Fixture, 50 ohm system) VDD= 12.5 Vdc, IDQ(A+B)= 400 mA, Pin= 1 W, f = 520 MHz|
|Common--Source Amplifier Output Power<br>Pout<br>—<br>70<br>—<br>W<br>Drain Efficiency<br>D<br>—<br>68.5<br>—<br>%<br>**Load Mismatch/Ruggedness**(In Freescale Test Fixture, 50 ohm system) IDQ(A+B)= 400 mA<br>**Frequency**<br>**(MHz)**<br>**Signal**<br>**Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test Voltage, VDD**<br>**Result**<br>520<br>CW<br>> 65:1 at all Phase Angles<br>2<br>(3 dB Overdrive)<br>17<br>No Device Degradation<br>1. Each side of device measured separately.<br>2. Measurements made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull<br>wing (GN) parts.<br>~~—~~<br>~~a~~|



**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

3 

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Ak<br>TYPICAL CHARACTERISTICS<br>300 11<br>a Ciss 10 TA = 25C VGS = 3.75 Vdc<br>— 9<br>100<br>SSP Ree 8 | LTpp| | | hd| dT |<br>Coss 7 3.5 Vdc<br>_— HA+ ++i t+ 14<br>a Ane —<br>6<br>a | f a<br>5<br>10 e e<br>4 3.25 Vdc<br>—$—$_— = 3 ye |<br>ee e e Crss 21 y i i ft 2.5 Vdc | | 3 Vdc<br>Measured with 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc<br>1 Pe 0 (a<br>0 5 10 15 20 0 2 4 6 8 10 12 14 16 18 20<br>VDS, DRAIN--SOURCE VOLTAGE (VOLTS) VDS, DRAIN--SOURCE VOLTAGE (VOLTS)<br>Note:  Each side of device measured separately. Note:  Measured with both sides of the transistor tied together.<br>, DRAIN CURRENT (AMPS)<br>C, CAPACITANCE (pF)<br>IDS<br>**----- End of picture text -----**<br>


**Figure 2. Capacitance versus Drain--Source Voltage** 

**Figure 3. Drain Current versus Drain--Source Voltage** 

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10 [8]<br>VDD = 12.5 Vdc<br>SSS SSS<br>1 INAS ID = 6.3 Amps ( | | J | fT ft yy<br>10 [7]<br>Sa 7.8 Amps<br>S S S<br>10 [6] | | | | | |Sstt<br>9.4 Amps<br>po<br>10 [5] | | | | | | jj jjEEE| ee} fy<br>Pot===== SS SSS<br>10 [4] PiE ftTe;| yttE tT TT ee eT ET tt<br>90 110 130 150 170 190 210 230 250<br>TJ, JUNCTION TEMPERATURE (C)<br>MTTF (HOURS)<br>**----- End of picture text -----**<br>


**Note:** MTTF value represents the total cumulative operating time under indicated test conditions. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 

**Figure 4. MTTF versus Junction Temperature -- CW** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

4 

## **520 MHz NARROWBAND PRODUCTION TEST FIXTURE** 

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**Figure 5. AFT05MP075NR1 Narrowband Test Circuit Component Layout — 520 MHz** 

**Table 6. AFT05MP075NR1 Narrowband Test Circuit Component Designations and Values — 520 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1, B2|Ferrite Beads|2743019447|Fair-Rite|
|C1, C11|22F, 35 V, Tantalum Capacitors|T491X226K035AT|Kemet|
|C2, C12, C18, C28|0.1F Chip Capacitors|CDR33BX104AKWS|AVX|
|C3, C13|220 nF Chip Capacitors|C1812C224K5RAC-TU|Kemet|
|C4, C14|2.2F Chip Capacitors|C1825C225J5RAC-TU|Kemet|
|C5|5.1 pF Chip Capacitor|ATC100B5R1CT500XT|ATC|
|C6, C7|20 pF Chip Capacitors|ATC100B200JT500XT|ATC|
|C8|16 pF Chip Capacitor|ATC100B160JT500XT|ATC|
|C9|36 pF Chip Capacitor|ATC100B360JT500XT|ATC|
|C10|2.7 pF Chip Capacitor|ATC100B2R7BT500XT|ATC|
|C15, C25|240 pF Chip Capacitors|ATC100B241JT200XT|ATC|
|C16, C26|2.2F Chip Capacitors|G2225X7R225KT3AB|ATC|
|C17, C27|0.1F Chip Capacitors|C1812F104K1RAC--TU|Kemet|
|C19, C20, C29, C30|470F, 63 V Electrolytic Capacitors|MCGPR63V477M13X26-RH|Multicomp|
|C21|51 pF Chip Capacitor|ATC100B510GT500XT|ATC|
|C22, C24|100 pF Chip Capacitors|ATC100B101JT500XT|ATC|
|C23|24 pF Chip Capacitor|ATC100B240JT500XT|ATC|
|L1, L2|5.0 nH Inductors|A02TKLC|Coilcraft|
|L3, L4|17.5 nH Inductors|GA3095--ALC|Coilcraft|
|Coax1, 2, 3, 4|25Semi Rigid Coax, 2.4Shield Length|UT-141C-25|Micro-Coax|
|PCB|0.030,r = 2.55|AD255A|Arlon|



**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

5 

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I!<br>F4l i<br>C 4 :<br>C hi ;<br>E4 :<br>E4h :<br>eal :<br>eal -<br>:<br>=<br>|<br>sto!<br>| |<br>_ -<br>7<br>e al 1 i t+<br>e al<br>F 4lil | | .<br>F i<br>l!<br>2 a eal<br>RF<br>OUTPUT<br>Z14<br>C10<br>VSUPPLY Z13 VSUPPLY<br>+ C20 + C30<br>+ C19 COAX3 COAX4 + C29<br>C18 C28<br>C17 Z12 Z25 C27<br>C23<br>C16 C26<br>Z11 Z24<br>C15 C22 C24 C25<br>L3 Z8 Z10 C21 Z23 Z21 L4<br>Z9 Z22<br>DUT<br>Z6 Z19<br>L1 Z7 Z20 L2<br>C9 C14<br>C4<br>Z5 Z18 C13<br>C3 C8<br>C2 C12<br>Z4 Z17<br>C6 C7<br>B1 B2<br>+ C1 Z3 C5 Z16 + C11<br>Z2 Z15<br>BIAS<br>BIAS V<br>V<br>COAX1 COAX2<br>Z1<br>RF<br>INPUT<br>**----- End of picture text -----**<br>


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Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>      <br>0.150 0.522 0.230 0.230 0.230 0.082 0.082<br>Description<br>      <br>0.672 0.290 0.590 0.030 0.010 0.154 0.100<br>Microstrip Z8*, Z21* Z9, Z22 Z10, Z23 Z11, Z24 Z12, Z25 Z13 Z14<br>Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip Microstrip<br>      <br>0.082 0.125 0.125 0.125 0.125 0.740 0.058<br>Description<br>      <br>0.366 0.010 0.018 0.135 0.100 0.430 0.726<br>Figure 6. AFT05MP075NR1 Narrowband Test Circuit Schematic — 520 MHz Microstrip Z1 Z2, Z15 Z3, Z16 Z4, Z17 Z5, Z18 Z6, Z19 Z7*, Z20* * Line length includes microstrip bends<br>Table 7. AFT05MP075NR1 Narrowband Test Circuit Microstrips — 520 MHz<br>**----- End of picture text -----**<br>


**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

6 

**TYPICAL CHARACTERISTICS — 520 MHz** 

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120<br>VDD = 13.6 Vdc, Pin = 1 W<br>100<br>pid VDD = 12.5 Vdc, Pin = 1 W<br>80<br>pf VDD = 13.6 Vdc, P | dd in = 0.5 W 4 een<br>60<br>40 VDD = 12.5 Vdc<br>Pin = 0.5 W<br>20 Sf fe.<br>SL<br>f = 520 MHz<br>0 ee ane<br>0 0.5 1 1.5 2 2.5 3 3.5 4 4.5<br>VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 7. Output Power versus Gate--Source Voltage<br>21 80<br>20 pt EE ee 70<br>19 Ss. Gps ae 60<br>18 50<br>pee NN<br>17 PE [LIA] 40<br>16 AtEa  D Pout HtAnesONO 30<br>15 20<br>14 VDD = 12.5 Vdc, IDQ(A+B) = 400 mA 10<br>f = 520 MHz<br>aie<br>13 co 1 dt 0<br>0.1 1 3<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>


**Figure 8. Power Gain, Output Power and Drain Efficiency versus Input Power** 

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VDD = 12.5 Vdc, IDQ(A+B) = 400 mA, Pout = 70 W<br>f Zsource Zload<br>MHz  <br>520 0.91 + j2.37 2.56 + j0.27<br>Zsource = Test circuit impedance as measured from<br>gate to gate, balanced configuration.<br>Zload = Test circuit impedance as measured from<br>drain to drain, balanced configuration.<br>Input Device Output<br>Matching + Under -- Matching<br>Network Test Network<br>50  50 <br>a _J 'l >" L b<br>r + i z<br>-- +<br>Zsource Zload<br>**----- End of picture text -----**<br>


**Figure 9. Narrowband Series Equivalent Source and Load Impedance — 520 MHz** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

7 

## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

|**Table 8. 450--520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 450--520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 450--520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|**Table 8. 450--520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system)|
|---|---|---|---|
|VDD= 12.5 Volts, IDQ(A+B)= 500 mA, TA= 25C, CW||||
|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(W)**<br>450<br>15.9<br>65.8<br>75<br>485<br>14.6<br>72.9<br>75<br>520<br>15.1<br>71.1<br>75<br>~~—————~~||||
|**Table 9. Load Mismatch/Ruggedness**(In Freescale Reference Circuit)||||
|**Frequency**<br>**Signal**<br>**Pin**||||
|**(MHz)**<br>**Type**<br>**VSWR**<br>**(W)**|**Test Voltage, VDD**||**Result**|
|485<br>CW<br>> 65:1 at all<br>6|17||No Device|
|Phase Angles<br>(3 dB Overdrive)|||Degradation|



**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

8 

## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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*C14 is mounted vertically. 

**Figure 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Layout — 450--520 MHz** 

**Table 10. AFT05MP075NR1 UHF Broadband Reference Circuit Component Designations and Values — 450--520 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1<br>Ferrite Bead|Ferrite Bead|2661000101|Fair-Rite|
|C1, C3, C4<br>10 pF Chip Capacitors|10 pF Chip Capacitors|ATC600F100JT250XT|ATC|
|C2<br>15 pF Chip Capacitor|15 pF Chip Capacitor|ATC600F150JT250XT|ATC|
|C5, C6<br>56 pF Chip Capacitors|56 pF Chip Capacitors|ATC600F560JT250XT|ATC|
|C7, C8<br>33 pF Chip Capacitors|33 pF Chip Capacitors|ATC800B330JT500XT|ATC|
|C9, C10<br>30 pF Chip Capacitors|30 pF Chip Capacitors|ATC800B300JT500XT|ATC|
|C11, C12<br>5.6 pF Chip Capacitors|5.6 pF Chip Capacitors|ATC800B5R6CT500XT|ATC|
|C13<br>16 pF Chip Capacitor|16 pF Chip Capacitor|ATC800B160JT500XT|ATC|
|C14<br>100 pF Chip Capacitor|100 pF Chip Capacitor|ATC800B101JT500XT|ATC|
|C15<br>47|47F, 16 V Tantalum Capacitor|T491D476K016AT|Kemet|
|C16, C21<br>1000 pF Chip Capacitors|1000 pF Chip Capacitors|ATC100B102JT50XT|ATC|
|C17, C20<br>200 pF Chip Capacitors|200 pF Chip Capacitors|ATC100B201JT300XT|ATC|
|C18, C19<br>100 pF Chip Capacitors|100 pF Chip Capacitors|ATC100B101JT500XT|ATC|
|C22<br>10|10F Chip Capacitor|GRM55DR61H106KA88L|Murata|
|C23<br>330|330F, 35 V Electrolytic Capacitor|MCGPR35V337M10X16-RH|Multicomp|
|C24<br>1.5 pF Chip Capacitor|1.5 pF Chip Capacitor|ATC800B1R5CT500XT|ATC|
|L1<br>120 nH Chip Inductor|120 nH Chip Inductor|0805CS-121X-LB|CoilCraft|
|L2<br>2.55 nH, 3 Turn Inductor|2.55 nH, 3 Turn Inductor|0906-3JLC|CoilCraft|
|L3<br>6 Turns, #22 AWG, 0.125|6 Turns, #22 AWG, 0.125ID|8075 Copper Magnetic Wire|Beldon|
|Q1<br>RF Power LDMOS Transistor|RF Power LDMOS Transistor|AFT05MP075NR1|Freescale|
|R1<br>180|180, 1/10 W Chip Resistor|RR1220P-181-B-T5|Vishay|
|R2, R3<br>10|10, 3/4 W Chip Resistors|CRCW201010R0FKEF|Vishay|
|PCB<br>0.030|0.030,r = 4.8|S1000-2, FR4|Shengyi|



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RF Device Data Freescale Semiconductor, Inc. 

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**==> picture [285 x 637] intentionally omitted <==**

**----- Start of picture text -----**<br>
-<br>|<br>4h<br>C i ra<br>rh oO t a,<br>r i<br>I" , ul |<br>F t tu<br>Lin<br>| |<br>@) )<br>4h a | =<br>||<br>| |<br>| |<br>UG)<br>||<br>||<br>| |<br>HI » u u | =<br>[4 » | =<br>||<br>||<br>4 |<br>H Hh<br>eal |<br>= 4:<br>|<br>HH! a n<br>RF<br>OUTPUT<br>Z39<br>C14<br>SUPPLY Z38 C13<br>V<br>+ C23 Z37 C24<br>C22 Z36<br>C11<br>Z34 Z35 C12<br>C21<br>Z32 Z33<br>C20<br>C9 Z30 Z31<br>C10<br>C19<br>Z28 Z29<br>L3<br>B1 C7<br>Z26 Z27 C8<br>Z24 R3 Z25<br>Z22 Z23<br>Z20 Z21<br>DUT<br>Z18 Z19<br>Z16 Z17<br>R2<br>Z14 Z15<br>C5 Z12 Z13<br>C6<br>C3 Z10 Z11<br>C4<br>Z8 Z9<br>Z6 Z7<br>C18<br>Z5<br>C17 Figure 11. AFT05MP075NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz<br>L2<br>C16<br>L1 R1 Z3 Z4<br>C2<br>Z2<br>+ C15<br>C1<br>Z1<br>BIAS<br>V RF<br>INPUT<br>**----- End of picture text -----**<br>


|**Figure 11. AFT05MP075NR1 UHF Broadband Reference Circuit Schematic — 450--520 MHz**<br>~~||~~|**Table 11. AFT05MP075NR1 UHF Broadband Reference Circuit Microstrips — 450--520 MHz**|**Description**<br>**Microstrip**<br>**Description**<br>**Microstrip**<br>**Description**<br>**Microstrip**|Z28, Z29<br>0.0750.083Microstrip<br>Z12, Z13<br>0.0150.083Microstrip<br>Z1<br>0.2500.052Microstrip|Z30, Z31<br>0.0300.083Microstrip<br>Z14, Z15<br>0.0650.093Microstrip<br>Z2<br>0.0590.064Microstrip|Z32*, Z33*<br>0.1080.073Microstrip<br>Z16, Z17<br>0.0500.093Microstrip<br>Z3<br>0.0600.050Microstrip|Z34*, Z35*<br>0.1090.073Microstrip<br>Z18, Z19<br>0.1100.170Microstrip<br>Z4<br>0.0540.064Microstrip|Z36<br>0.1770.054Microstrip<br>Z20, Z21<br>0.1100.170Microstrip<br>Z5<br>0.2000.054Microstrip|Z37<br>0.4700.054Microstrip<br>Z22, Z23<br>0.0500.093Microstrip<br>Z6*, Z7*<br>0.1950.073Microstrip|Z38<br>0.1300.054Microstrip<br>Z24, Z25<br>0.0170.093Microstrip<br>Z8, Z9<br>0.0350.083Microstrip|Z39<br>0.2000.054Microstrip<br>Z26, Z27<br>0.0480.093Microstrip<br>Z10, Z11<br>0.0550.083Microstrip|* Line length includes microstrip bends|
|---|---|---|---|---|---|---|---|---|---|---|---|



**AFT05MP075NR1 AFT05MP075GNR1** 

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## **TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
17 74<br>16.5 PTPere D 72<br>15.516 PLTYETTreTyeTTTyo 6870<br>15 Gps 66<br>poe<br>14.5 100<br>PE ee<br>14 ia eee 90<br>Pout<br>13.5 V DD  = 13.6 Vdc, P in  = 3 W 80<br>13 pO IDQ(A+B) = 500 mA |EREtt [| 70<br>440 450 460 470 480 490 500 510 520 530<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 12. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 13.6 V** 

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**----- Start of picture text -----**<br>
17 74<br>16.5 D 72<br>==<br>16 4 70<br>15.5 nan 68<br>VDD = 12.5 Vdc, Pin = 3 W<br>15 IDQ(A+B) = 500 mA 66<br>14.5 pd G ps 100<br>— ff tt<br>14 90<br>pf] ) eR<br>13.5 ee ee Pout 80<br>13 Pt tf | | ere | 70<br>440 450 460 470 480 490 500 510 520 530<br>f, FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P<br>POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 13. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power — 12.5 V** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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## **TYPICAL CHARACTERISTICS — 450--520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
140<br>f = 485 MHz VDD = 13.6 Vdc, Pin = 3 W 90<br>120 VDD = 13.6 Vdc, Pin = 1.5 W 2] 80 oo f = 485 MHz VDD = 13.6 Vdc<br>Pin = 3 W<br>100 ge VDD = 12.5 Vdc, Pin = 3 W 70 O VDD = 12.5 Vdc E<br>60 Pin = 3 W<br>80 VDD = 12.5 Vdc 50<br>Pin = 1.5 W 40 V DD = 13.6 Vdc<br>60 Pin = 1.5 W<br>Detail A 30<br>40 20 V DD = 12.5 Vdc<br>Pin = 1.5 W<br>10<br>20<br>CAA 0<br>0 0.5 1 1.5 2 2.5 3 3.5<br>0<br>0 1 2 3 4 5 VGS, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 14. Output Power versus Gate--Source Voltage<br>19 120<br>VDD = 12.5 Vdc, IDQ(A+B) = 500 mA<br>450 MHz<br>18 520 MHz 520 MHz 100<br>485 MHz<br>Gps 485 MHz<br>17 et oN 80<br>485 MHz<br>16 60<br>450 MHz 450 MHz<br>520 MHz<br>15 40<br>D<br>14 20<br>DE Pout AN<br>13 oo ) 0<br>L N<br>0.05 0.1 1 5<br>Pin, INPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>, OUTPUT POWER (WATTS)<br>out<br>out P<br>P<br>, POWER GAIN (dB)<br>ps<br>G , OUTPUT POWER (WATTS) , DRAIN EFFICIENCY (%)D<br>out <br>P<br>**----- End of picture text -----**<br>


**Figure 15. Power Gain, Output Power and Drain Efficiency versus Input Power and Frequency** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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## **450--520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

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**----- Start of picture text -----**<br>
M EA Zo = 2  TEs<br>WyWeMRS XO se HE<br>PLBESSEESS LESS SOSSeeneeSEEN eeeeeeL<br>$eOL] ff MIEKY LRERRRKEREE Oe f = 530 MHz AsSoKoehkkoLLHSannnn<br>Zsource<br>Y /§TREERI REE ~~pro S S NS ST0S Geannn<br>f = 450 MHz<br>Rt eel ry IPE I LOOSE SE<br>Sle] | Hi etiaee ELLERY f = 530 MHz  PECL [LL] [KK] SSESSE<br>te FYERT LTH PELL [D]<br>ere] | fAfe acaien f A ES<br>f = 450 MHz Zload<br>aBeascserssererissis e [coe] ae [EE] TH [EPRERAT] [ER] A LIEK]<br>if causPREECE Ht Firesisrancemesurescourouent( om conoucrancepraesruecounpuenn()| Geerare’CrH eat!cro<br>[|e]<br>**----- End of picture text -----**<br>


VDD = 12.5 Vdc, IDQ(A+B) = 500 mA, Pout = 75 W 

|||||**f**||||**Zsource**|**Zsource**|**Zload**|||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|||||**MHz**|||||||||||
|||||450||||0.55 + j0.59||0.75 + j0.30|||||
|||||460||||0.72 + j0.81||0.82 + j0.39|||||
|||||470||||0.79 + j0.93||0.90 + j0.42|||||
|||||480||||0.71 + j0.86||0.92 + j0.44|||||
|||||490||||0.62 + j0.78||0.93 + j0.41|||||
|||||500||||0.60 + j0.74||0.89 + j0.39|||||
|||||510||||0.64 + j0.72||0.85 + j0.39|||||
|||||520||||0.69 + j0.78||0.79 + j0.39|||||
|||||530||||0.70 + j1.03||0.74 + j0.43|||||
|||||Zsource|=|Test circuit impedance as measured from|||||||||
|||||||gate to ground.|||||||||
|||||Zload|=|Test circuit impedance as measured from|||||||||
|||||||drain to ground.|||||||||
|||||Input|||||Device|Output|||||
|50||||Matching<br>Network|||||Under<br>Test|Matching<br>Network||||50|
||||||||||||||||
||||||||||||||||
|||||||||**Zsource**||**Zload**|||||



**Figure 16. UHF Broadband Series Equivalent Source and Load Impedance — 450--520 MHz** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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## **PACKAGE DIMENSIONS** 

**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

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**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data 

Freescale Semiconductor, Inc. 

19 

## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following resources to aid your design process. 

## **Application Notes** 

- AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

- AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages 

## **Engineering Bulletins** 

- EB212: Using Data Sheet Impedances for RF LDMOS Devices 

## **Software** 

- Electromigration MTTF Calculator 

- RF High Power Model 

- .s2p File 

## **Development Tools** 

- Printed Circuit Boards 

For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the Software & Tools tab on the part’s Product Summary page to download the respective tool. 

## **REVISION HISTORY** 

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Feb. 2013|<br>Initial Release of Data Sheet|
|1|Aug. 2014|<br>Tape and Reel information: corrected tape width information from 32--inch reel to 44--inch reel to reflect<br>actual reel size, p. 1<br><br>Replaced case outline TO--270WB--4, Issue D with Issue E, pp. 14–16. Added notes 9 and 10, four<br>exposed source tabs, and a feature control frame to E and E5 on p. 14. Removed style and pin information<br>from notes section on p. 16.|



**AFT05MP075NR1 AFT05MP075GNR1** 

RF Device Data Freescale Semiconductor, Inc. 

20 

## _**How to Reach Us:**_ 

**Home Page:** freescale.com 

**Web Support:** freescale.com/support 

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2013–2014 Freescale Semiconductor, Inc. 

**AFT05MP075NR1 AFT05MP075GNR1** & freescale 

Document Number: AFT05MP075NRF Device Data Rev. 1, 8/2014Freescale Semiconductor, Inc. 

21
Updated at April 10, 2026
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