AFIC901NT1

RF FET Transistor, 30 V, 1.8 MHz, 1 GHz, HVQFN

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Manufacturer: NXP
Product type: RF FETs
Drain Source Voltage Vds:30V; Continuous Drain Current Id:-; Power Dissipation Pd:-; Operating Frequency Min:1.8MHz; Operating Frequency Max:1GHz; RF Transistor Case:HVQFN; No. of Pins:24
MSL: MSL 3 - 168 hours
SVHC: No SVHC (27-Jun-2024)
No. of Pins: 24Pins
Channel Type: N Channel
Product Range: AFIC901N
Power Dissipation: -
Transistor Mounting: Surface Mount
Transistor Case Style: HVQFN
Operating Frequency Max: 1GHz
Operating Frequency Min: 1.8MHz
Drain Source Voltage Vds: 30V
Operating Temperature Max: 150°C
Continuous Drain Current Id: -
Delivery and price
Units per pack	1000
Price	1.44 €
Current stock	10+
Lead time	30 days
Datasheet
**Freescale Semiconductor** Technical Data 

Document Number: AFIC901N Rev. 0, 1/2016 

## **RF LDMOS Wideband Integrated Power Amplifier** 

The AFIC901N is a 2--stage, high gain amplifier designed to provide a high level of flexibility to the amplifier designer. The device is unmatched even at the interstage, allowing performance to be optimized for any frequency in the 1.8 to 1000 MHz range. The high gain, ruggedness and wideband performance of this device make it ideal for use as a pre--driver and driver in a wide range of industrial, medical and communications applications. 

## **AFIC901N** 

**1.8–1000 MHz, 30 dBm, 7.5 V AIRFAST RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIER** a 

**Typical Narrowband Performance** (7.5 Vdc, TA = 25C, CW) 

|**Frequency**<br>**(MHz)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(dBm)**<br>520 **(1)**<br>32.2<br>73.0<br>31.2<br>~~ae~~|
|---|
|**Typical Wideband Performance** (7.5 Vdc, TA= 25C, CW)|
|**Frequency**<br>**(MHz)**<br>**Pin**<br>**(dBm)**<br>**Gps**<br>**(dB)**<br>**D**<br>**(%)**<br>**Pout**<br>**(dBm)**<br>136–174 **(2,5)**<br>0<br>30.6<br>62.1<br>30.6<br>350–520 **(3,5)**<br>3<br>27.4<br>61.5<br>30.4<br>760–870 **(4,5)**<br>3<br>27.6<br>57.0<br>30.6<br>**Load Mismatch/Ruggedness**<br>**Frequency**<br>**(MHz)**<br>**Signal Type**<br>**VSWR**<br>**Pin**<br>**(W)**<br>**Test**<br>**Voltage**<br>**Result**<br>175 **(2)**<br>CW<br>> 25:1 at all<br>Phase Angles<br>3 dB<br>Overdrive<br>from rated<br>power<br>9<br>No Device<br>Degradation<br>520 **(3)**<br>~~=—————~~<br>~~=aannn~~|
|1. Measured in 520 MHz narrowband test circuit.|
|2. Measured in 136–174 MHz VHF broadband reference circuit.|



3. Measured in 350–520 MHz UHF broadband reference circuit. 

4. Measured in 760–870 MHz broadband reference circuit. 

5. The values shown are the center band performance numbers across the indicated frequency range. 

**==> picture [160 x 210] intentionally omitted <==**

**----- Start of picture text -----**<br>
QFN 4  4<br>24 23 22 21 20 19<br>9oooon<br>GND 1 18 GND<br>GND 2 Stage 1 17 GND<br>N.C. 3 16 N.C.<br>Drain B 4 Stage 2 15 Gate B<br>Drain B 5 14 Gate B<br>Drain B 6 13 Gate B<br>7 8 9 10 11 12<br>Gate A Gate A N.C. N.C. Drain A Drain A<br>N.C. N.C. N.C. N.C. N.C. N.C.<br>**----- End of picture text -----**<br>


Note: Exposed backside of the package is the source terminal for the transistors. 

## **Features** 

- Characterized for Operation from 1.8 to 1000 MHz 

**Figure 1. Pin Connections** 

- Unmatched Input, Interstage and Output Allowing Wide Frequency Range Utilization 

- Integrated ESD Protection 

- Same PCB Layout Can be Used for 136--174 MHz, 350--520 MHz and 760–870 MHz Designs. 

- 24--pin, 4 mm QFN Plastic Package 

## **Typical Applications** 

- Driver for Mobile Radio Power Amplifiers 

- Output Stage for Low Power Handheld Radios 

- Driver for Communications and Industrial Systems 

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**----- Start of picture text -----**<br>
Stage 1 Stage 2<br>RFin RFout<br>External<br>Interstage Match<br>**----- End of picture text -----**<br>


**Figure 2. Typical Application** 

**AFIC901N** 

 Freescale Semiconductor, Inc., 2016. All rights reserved. 

RF Device Data Freescale Semiconductor, Inc. 

1 

**Table 1. Maximum Ratings** 

|**Table 1. Maximum Ratings**|||||
|---|---|---|---|---|
|**Rating**||**Symbol**|**Value**|**Unit**|
|Drain--Source Voltage||VDSS|–0.5, +30|Vdc|
|Gate--Source Voltage||VGS|–6.0, +12|Vdc|
|Storage Temperature Range||Tstg|–65 to +150|C|
|Case Operating Temperature Range||TC|–40 to +150|C|
|Operating Junction Temperature Range **(1,2)**||TJ|–40 to +150|C|
|**Table 2. Thermal Characteristics**|||||
|**Characteristic**||**Symbol**|**Value (2,3)**|**Unit**|
|Thermal Resistance, Junction to Case<br>Case Temperature 78C, 30 dBm CW, 520 MHz<br>Stage 1, 7.5 Vdc, IDQ1= 8 mA<br>Stage 2, 7.5 Vdc, IDQ2= 24 mA||RJC|32<br>9.4|C/W|
|**Table 3. ESD Protection Characteristics**|||||
|**Test Methodology**|||**Class**||
|Human Body Model (per JESD22--A114)|||1A, passes 250 V||
|Machine Model (per EIA/JESD22--A115)|||A||
|Charge Device Model (per JESD22--C101)|||II, passes 200 V||
|**Table 4. Moisture Sensitivity Level**|||||
|**Test Methodology**|**Rating**|**Package Peak Temperature**||**Unit**|
|Per JESD22--A113, IPC/JEDEC J--STD--020|3|260||C|



1. Continuous use at maximum temperature will affect MTTF. 

2. MTTF calculator available at http://www.nxp.com/RF/calculators. 

3. Refer to AN1955 _, Thermal Measurement Methodology of RF Power Amplifiers._ Go to http://www.nxp.com/RF and search for AN1955. 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

2 

**Table 5. Electrical Characteristics** (TA = 25C unless otherwise noted) 

|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise note|**Table 5. Electrical Characteristics** (TA= 25C unless otherwise note|d)|||||
|---|---|---|---|---|---|---|
|**Characteristic**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|**Stage 1 -- Off Characteristics (1)**|||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 30 Vdc, VGS= 0 Vdc)||IDSS|—|—|1|Adc|
|Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 1Adc)||V(BR)DSS|30|37|—|Vdc|
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)||IGSS|—|—|500|nAdc|
|**Stage 1 -- On Characteristics (1)**|||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 6Adc)||VGS(th)|1.8|2.2|2.6|Vdc|
|Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 46 mAdc)||VDS(on)|—|0.24|—|Vdc|
|Forward Transconductance<br>(VDS= 7.5 Vdc, ID= 0.1 Adc)||gfs|—|0.096|—|S|
|**Stage 2 -- Off Characteristics (1)**|||||||
|Zero Gate Voltage Drain Leakage Current<br>(VDS= 30 Vdc, VGS= 0 Vdc)||IDSS|—|—|1|Adc|
|Drain--Source Breakdown Voltage<br>(VGS= 0 Vdc, ID= 1Adc)||V(BR)DSS|30|37|—|Vdc|
|Gate--Source Leakage Current<br>(VGS= 5 Vdc, VDS= 0 Vdc)||IGSS|—|—|500|nAdc|
|**Stage 2 -- On Characteristics (1)**|||||||
|Gate Threshold Voltage<br>(VDS= 10 Vdc, ID= 25Adc)||VGS(th)|1.7|2.1|2.5|Vdc|
|Drain--Source On--Voltage<br>(VGS= 10 Vdc, ID= 380 mAdc)||VDS(on)|—|0.23|—|Vdc|
|Forward Transconductance<br>(VDS= 7.5 Vdc, ID= 1.1 Adc)||gfs|—|1.1|—|S|
|**Functional Tests**(In Freescale Narrowband Test Fixture, 50 ohm system) VDD= 7.5 Vdc, IDQ1= 8 mA, IDQ2= 24 mA,<br>Pin= –1 dBm, f = 520 MHz|||||||
|Output Power||Pout|—|31.2|—|dBm|
|Power Gain||Gps|—|32.2|—|dB|
|Drain Efficiency||D|—|73.0|—|%|
|**Table 6. Ordering Information**|||||||
|**Device**|**Tape and Reel Information**||||**Package**||
|AFIC901NT1|T1 Suffix = 1,000 Units, 12 mm Tape Width, 7--inch||Reel|QFN 44|||



1. Each side of device measured separately. 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

3 

## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT** 

**Table 7. 136–174 MHz VHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA 

|VDD= 7.5 Vdc, IDQ1= 10 mA, IDQ2= 30|mA||||
|---|---|---|---|---|
|**Frequency**<br>**(MHz)**|**Pin**<br>**(dBm)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Pout**<br>**(dBm)**|
|135|–0.8|30.8|65.9|30.0|
|155|–1.3|31.3|59.6|30.0|
|175|–1.1|31.1|61.4|30.0|



**Table 8. Load Mismatch/Ruggedness** (In Freescale 136–174 MHz Reference Circuit, 50 ohm system) IDQ1 = 10 mA, IDQ2 = 30 mA 

|**Frequency**<br>**(MHz)**|**Signal Type**|**VSWR**|**Pin**<br>**(W)**|**Test Voltage, VDD**|**Result**|
|---|---|---|---|---|---|
|175|CW|> 25:1 at all<br>Phase Angles|3 dB Overdrive<br>from rated power|9|No Device<br>Degradation|



**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

4 

## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT — 0.83**  **1.86**  **(2.11 cm**  **4.72 cm)** 

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**----- Start of picture text -----**<br>
J1<br>R1 C3 C4<br>VG1 VG2 R7<br>C17<br>C1 L3<br>P1<br>C9 P2<br>R6<br>L4 C11 C12 R8<br>C5 C6 R9<br>R2 C10 C15<br>R4 C8 C13 C14<br>B1<br>L1 R3 R5 Q1<br>L5<br>C7 R10<br>C2 L2 L6<br>C16<br>Rev. 0<br>D75372<br>**----- End of picture text -----**<br>


**Figure 3. AFIC901N VHF Broadband Reference Circuit Component Layout — 136–174 MHz** 

**Table 9. AFIC901N VHF Broadband Reference Circuit Component Designations and Values — 136–174 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1|RF Bead|2508051107Y0|Fair-Rite|
|C1, C5, C9, C12, C14,<br>C17|1000 pF Chip Capacitors|C2012X7R2E102M085AA|TDK|
|C2, C16|15 pF Chip Capacitors|GQM2195C2E150FB12D|Murata|
|C3|1F Chip Capacitor|GRM21BR71H105KA12L|Murata|
|C4, C6, C7, C8, C11,<br>C13|100 pF Chip Capacitors|GQM2195C2E101GB12D|Murata|
|C10|6.2 pF Chip Capacitor|GQM2195C2E6R2BB12D|Murata|
|C15|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|J1|Right-Angle Breakaway Headers (3 Pins)|22-28-8360|Molex|
|L1, L4|56 nH Inductors|LL1608-FSL56NJ|TOKO|
|L2|180 nH Inductor|LL1608-FSLR18J|TOKO|
|L3|120 nH Inductor|LL1608-FSLR12J|TOKO|
|L5|180 nH Inductor|1008CS-181XJLB|Coilcraft|
|L6|15.7 nH Inductor|0806SQ15N|Coilcraft|
|P1, P2|5.0 kMulti-turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns|
|Q1|RF Power LDMOS Amplifier|AFIC901NT1|Freescale|
|R1, R7|15 k, 1/10 W Chip Resistors|RR1220P-153-B-T5|Susumu|
|R2, R8|10 k, 1/8 W Chip Resistors|CRCW080510K0FKEA|Vishay|
|R3|200, 1/8 W Chip Resistor|CRCW0805200RJNEA|Vishay|
|R4, R6|1.2 k, 1/8 W Chip Resistors|CRCW08051K20FKEA|Vishay|
|R5|510, 1/10 W Chip Resistor|RR1220P-511-B-T5|Susumu|
|R9, R10|0, 2.5 A Chip Resistors|CWCR08050000Z0EA|Vishay|
|PCB|FR4 (S--1000), 0.020,r= 4.8|D75372|MTL|



**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

5 

## **TYPICAL CHARACTERISTICS — 136–174 MHz VHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [266 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
35 80<br>34 70<br>D<br>33 60<br>32 50<br>31 Gps 40<br>30 32<br>29 Pout 31<br>28 30<br>27 VDD = 7.5 V, Pin = 0 dBm, IDQ1 = 10 mA, IDQ2 = 30 mA 29<br>26 28<br>135 140 145 150 155 160 165 170 175<br>FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P POWER (dBm)<br>**----- End of picture text -----**<br>


**Figure 4. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power** 

**==> picture [453 x 393] intentionally omitted <==**

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2.5<br>V DD = 7.5 V, I DQ1 = 10 mA, f = 155 MHz 0.5<br>VDD = 7.5 V, IDQ1 = 10 mA, f = 155 MHz<br>2<br>1.5<br>0.25<br>1 Pin = 0 dBm<br>Pin = 0 dBm<br>Pin = –3 dBm<br>0.5<br>Pin = –3 dBm<br>0<br>Detail A 1.5 2.0 2.5<br>0<br>1.5 2.0 2.5 3.0 3.5 4.0 VGS2, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS2, GATE--SOURCE VOLTAGE (VOLTS) Detail A<br>Figure 5. Output Power versus Gate--Source Voltage, 2nd Stage<br>36 80<br>D<br>35 135 MHz 70<br>34 175 MHz 60<br>33 50<br>32 155 MHz 175 MHz 40<br>3130 155 MHz 135 MHz G ps 3020<br>29 32<br>175 MHz<br>28 30<br>27 135 MHz Pout 28<br>26 26<br>25 24<br>24 155 MHz VDD = 7.5 Vdc, lDQ1 = 10 mA, lDQ2 = 30 mA 22<br>23 20<br>–8 –6 –4 –2 0 2 4<br>Pin, INPUT POWER (dBm)<br>Pout, OUTPUT POWER (WATTS)<br>Pout, OUTPUT POWER (WATTS)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P POWER (dBm)<br>**----- End of picture text -----**<br>


**Figure 6. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

6 

## **136–174 MHz VHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [432 x 206] intentionally omitted <==**

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|**f**<br>**MHz**|**Zsource1**<br>|**Zload1**<br>|**Zsource2**<br>|**Zload2**<br>|
|---|---|---|---|---|
|135|129.8 + j62.2|93.0 + j49.5|27.8 + j35.9|34.3 + j2.85|
|140|123.1 + j54.4|92.5 + j42.5|29.4 + j35.1|33.4 + j1.92|
|145|117.3 + j49.7|91.6 + j37.2|30.7 + j34.1|32.5 + j1.00|
|150|112.5 + j47.8|91.0 + j33.3|31.8 + j33.1|31.7 + j0.08|
|155|109.1 + j47.7|90.9 + j30.7|32.7 + j32.2|30.9 – j0.83|
|160|107.1 + j49.6|91.9 + j29.2|33.2 + j31.4|30.0 – j1.66|
|165|106.3 + j53.5|93.9 + j28.6|33.6 + j31.0|29.1 – j2.41|
|170|106.8 + j59.2|97.4 + j28.7|33.9 + j30.9|28.2 – j3.03|
|175<br>~~a~~|108.3 + j67.5|102.6 + j29.4|34.1 + j31.1|27.4 – j3.49|



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**----- Start of picture text -----**<br>
Input Interstage Output<br>Matching Stage 1 Matching Stage 2 Matching<br>Network Network Network<br>50  50 <br>Zsource1 Zload1 Zsource2 Zload2<br>**----- End of picture text -----**<br>


**Figure 7. VHF Broadband Series Equivalent Source and Load Impedance — 136--174 MHz** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

7 

## **350–520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**Table 10. 350–520 MHz UHF Broadband Performance** (In Freescale Reference Circuit, 50 ohm system) VDD = 7.5 Vdc, IDQ1 = 10 mA, IDQ2 = 30 mA 

|**Frequency**<br>**(MHz)**|**Pin**<br>**(dBm)**|**Gps**<br>**(dB)**|**D**<br>**(%)**|**Pout**<br>**(dBm)**|
|---|---|---|---|---|
|350|2.3|27.7|52.8|30.0|
|435|2.1|27.9|59.6|30.0|
|520|2.4|27.6|66.3|30.0|



**Table 11. Load Mismatch/Ruggedness** (In Freescale 350–520 MHz Reference Circuit, 50 ohm system) IDQ1 = 100 mA, IDQ2 = 30 mA 

|**Frequency**<br>**(MHz)**|**Signal Type**|**VSWR**|**Pin**<br>**(W)**|**Test Voltage, VDD**|**Result**|
|---|---|---|---|---|---|
|520|CW|> 25:1 at all<br>Phase Angles|3 dB Overdrive<br>from rated power|9|No Device<br>Degradation|



**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

8 

## **350–520 MHz UHF BROADBAND REFERENCE CIRCUIT — 0.83**  **1.86**  **(2.11 cm**  **4.72 cm)** 

**==> picture [9 x 7] intentionally omitted <==**

**----- Start of picture text -----**<br>
J1<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
R2 C4 C5<br>VG1 VG2 R8<br>C18<br>L1 C1 L4<br>P1<br>C10 R7 P2<br>L5 R9<br>C12 C13<br>R1 C6<br>R3 C7 C16<br>C2 C11<br>R10<br>R5 C14 C15<br>R4 C9<br>B1<br>L2 R6 Q1<br>L6 R11<br>C3 L3 C8 L7<br>C17<br>Rev. 0<br>D75372<br>**----- End of picture text -----**<br>


**Figure 8. AFIC901N UHF Broadband Reference Circuit Component Layout — 350–520 MHz** 

**Table 12. AFIC901N UHF Broadband Reference Circuit Component Designations and Values — 350–520 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|B1|RF Bead|2508051107Y0|Fair-Rite|
|C1, C5, C7, C9, C10,<br>C12, C14, C18|100 pF Chip Capacitors|GQM2195C2E101GB12D|Murata|
|C2|10 pF Chip Capacitor|GQM2195C2E100FB12D|Murata|
|C3|12 pF Chip Capacitor|GQM2195C2E120FB12D|Murata|
|C4|1F Chip Capacitor|GRM21BR71H105KA12L|Murata|
|C6, C13, C15|1000 pF Chip Capacitors|C2012X7R2E102M085AA|TDK|
|C8|39 pF Chip Capacitor|GQM2195C2E390GB12D|Murata|
|C11|4.7 pF Chip Capacitor|GQM2195C2E4R7BB12D|Murata|
|C16|10F Chip Capacitor|GRM31CR61H106KA12L|Murata|
|C17|6.8 pF Chip Capacitor|GQM2195C2E6R8BB12D|Murata|
|J1|Right-Angle Breakaway Headers (3 Pins)|22-28-8360|Molex|
|L1, L4|120 nH Inductors|LL1608-FSLR12J|TOKO|
|L2|12 nH Inductor|LL1608-FSL12NJ|TOKO|
|L3|39 nH Inductor|LL1608-FSL39NJ|TOKO|
|L5|15 nH Inductor|LL1608-FSL15NJ|TOKO|
|L6|25 nH Inductor|0908SQ25N|Coilcraft|
|L7|8.1 nH Inductor|0908SQ8N1|Coilcraft|
|P1, P2|5.0 kMulti-turn Cermet Trimmer Potentiometer|3224W-1-502E|Bourns|
|Q1|RF Power LDMOS Amplifier|AFIC901NT1|Freescale|
|R1|51, 1/4 W Chip Resistor|SG73P2ATTD51R0F|KOA Speer|
|R2, R8|15 k, 1/10 W Chip Resistors|RR1220P-153-B-T5|Susumu|
|R3, R9|10 k, 1/8 W Chip Resistors|CRCW080510K0FKEA|Vishay|
|R4|200, 1/8 W Chip Resistor|CRCW0805200RJNEA|Vishay|
|R5, R7|1.2 k, 1/8 W Chip Resistors|CRCW08051K20FKEA|Vishay|
|R6|2.2 k, 1/8 W Chip Resistor|CRCW08052K20JNEA|Vishay|
|R10, R11|0, 2.5 A Chip Resistors|CWCR08050000Z0EA|Vishay|
|PCB|FR4 (S--1000), 0.020,r= 4.8|D75372|MTL|
||||**AFIC901N**|



RF Device Data Freescale Semiconductor, Inc. 

9 

**TYPICAL CHARACTERISTICS — 350–520 MHz UHF BROADBAND REFERENCE CIRCUIT** 

**==> picture [278 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
32 80<br>31 70<br>D<br>30 60<br>29 50<br>Gps<br>28 40<br>27 33<br>26 32<br>Pout<br>25 31<br>24 30<br>VDD = 7.5 V, Pin = 3.0 dBm, lDQ1 = 10 mA, lDQ2 = 30 mA<br>23 29<br>340 360 380 400 420 440 460 480 500 520 540<br>FREQUENCY (MHz)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P POWER (dBm)<br>**----- End of picture text -----**<br>


**Figure 10. Power Gain, Drain Efficiency and Output Power versus Frequency at a Constant Input Power** 

**==> picture [460 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
2.5<br>VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz 0.5<br>VDD = 7.5 V, IDQ1 = 10 mA, f = 435 MHz<br>2<br>1.5<br>0.25<br>1 Pin = 3 dBm<br>Pin = 3 dBm<br>Pin = 0 dBm Pin = 0 dBm<br>0.5<br>0<br>Detail A 1.0 1.5 2.0 2.5<br>0<br>1.5 2.0 2.5 3.0 3.5 4.0 VGS2, GATE--SOURCE VOLTAGE (VOLTS)<br>VGS2, GATE--SOURCE VOLTAGE (VOLTS) DETAIL A<br>, OUTPUT POWER (WATTS)<br>out<br>P Pout, OUTPUT POWER (WATTS)<br>**----- End of picture text -----**<br>


**Figure 9. Output Power versus Gate--Source Voltage, 2nd Stage** 

**==> picture [277 x 175] intentionally omitted <==**

**----- Start of picture text -----**<br>
36 80<br>520 MHz<br>35 70<br>D<br>34 60<br>33 435 MHz 50<br>32 350 MHz 40<br>31 30<br>30 520 MHz 20<br>29 350 MHz Gps 10<br>28 32<br>27 435 MHz 30<br>26 28<br>25 520 MHz Pout 26<br>24 350 MHz 24<br>435 MHz<br>23 22<br>22 V DD  = 7.5 Vdc, l DQ1  = 10 mA, l DQ2  = 30 mA 20<br>21 18<br>--8 –6 –4 –2 0 2 4 6 8<br>Pin, INPUT POWER (dBm)<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br>, OUTPUT<br>out<br>P POWER (dBm)<br>**----- End of picture text -----**<br>


**Figure 11. Power Gain, Drain Efficiency and Output Power versus Input Power and Frequency** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

10 

|**350–520 MHz UHF BROADBAND REFERENCE CIRCUIT**<br>Zsource<br>Zinterstage_in<br>Zload<br>Zo= 75<br>Zinterstage_out<br>f = 350 MHz<br>f = 520 MHz<br>f = 350 MHz<br>f = 520 MHz<br>f = 350 MHz<br>f = 520 MHz<br>f = 350 MHz<br>f = 520 MHz<br>Oo<br>HT<br>S23<br>FA A CKD<br>SORES<br>EEE<br>HO RRO<br>_<br><S<br>CLT<br>xXx<br>7 ORK XS ~~ST~~H<br>$ e<br>-,RELL<br>OSOSSOO<br>RRR<br>Sf¥/8~~**a**~~<br>~~a~~e<br>yf ~~a~~<br>Ta,P~~RE~~ ERo =~~A~~<br>oS SRS Hy<br>ef<br>eh]<br>fyEoL~~EP~~<br>ae,Eiaeecae<br>Me<br>AyeT<br>Es<br>wea’,LT ORERER LSRESSCSere<br>9<br>Eh seasensusass<br>EET?<br>lyERTLeLEEKINOE<br>y\soe<br>sls/ |AS~~ER~~<br>Seeneae<br>eeeasEET<br>fee**:**<br>eps] |FeDestaasasisaeese HY<br>AvenEEA i$LHP TORS<br>ef |7?A“HERE Nre<br>Huumanuicieeitie Bee<br>#1<br>|e serereiieeirrsy eumeadeasatt]<br>PeMeecaritmeet) Meare<br>Ele<br>gauseeaueseccsser:<br>BEE<br>CIHel<br>stterted HtLCE LEEKS<br>Hf! eerie<br>DEPTH rests<br>EEE Ca SS<br>it |]BEEEEREHe Habeee [aweet)|_| peccerueenttr Wen<br>Sageseeeesseriafeeeae HH<br>RCONDUCTANCE CO!<br>:<br>CESS<br>Oo<br>HEC BREE HE<br>OMPONENT(-#-), o<br>L|<br>U1<br>eee<br>SKS isecien A<br>i~~oe~~<br>4) 7FERSertecrecticaree ea aesenustes ~~A~~<br>S**S**L **L**KEHS.<br>2\ 4FooPeeCL~~TT~~ko vx S XP T LESS<br>3<br>eseeteecece eemueneeetLine<br>ASS S REERE<br>rae<br>Semensnesecacctcccecg, ae esnantanl<br>KS ASS SSSR ALEa Wroretrs:<br>o{e\|sete<br>eneenneercae<br>SRO Sa<br>a\"\ Bieee<br>SESS RT TETE<br>abacccAG~~,~~<br>o<br>De Ste TT Se<br>a AEE<br>OSS oe<br>AVES<br>SN<br>mw|
|---|
|**f**<br>**MHz**<br>**Zsource1**<br><br>**Zload1**<br><br>**Zsource2**<br><br>**Zload2**<br><br>~~a~~|
|350<br>57.4 + j77.2<br>60.5 – j16.5<br>36.3 + j5.69<br>22.0 + j6.12|
|360<br>60.6 + j94.9<br>62.7 – j20.6<br>37.2 + j6.57<br>21.7 + j6.35|
|370<br>69.0 + j100.2<br>65.1 – j24.8<br>38.3 + j8.07<br>21.5 + j6.92|
|380<br>79.2 + j105.3<br>66.5 – j29.4<br>39.4 + j9.66<br>21.2 + j7.57|
|390<br>91.5 + j109.9<br>65.1 – j30.7<br>39.2 + j11.6<br>20.3 + j8.45|
|400<br>106.3 + j113.5<br>65.3 – j28.6<br>38.6 + j14.6<br>19.4 + j9.81|
|410<br>124.0 + j115.1<br>65.3 – j26.2<br>38.0 + j17.3<br>18.6 + j11.0|
|420<br>144.6 + j113.6<br>64.3 – j23.4<br>37.3 + j19.2<br>17.8 + j11.9|
|430<br>167.9 + j107.3<br>62.6 – j21.0<br>36.7 + j20.1<br>17.2 + j12.5|
|440<br>192.4 + j94.1<br>60.6 – j19.3<br>36.7 + j20.3<br>16.9 + j12.7|
|450<br>196.1 + j89.7<br>58.9 – j18.6<br>36.8 + j20.4<br>16.7 + j12.6|
|460<br>197.5 + j86.7<br>57.6 – j19.1<br>36.8 + j20.5<br>16.6 + j12.2|
|470<br>198.8 + j83.7<br>56.8 – j20.8<br>36.8 + j20.6<br>16.5 + j11.7|
|480<br>199.9 + j80.6<br>56.3 – j23.7<br>36.8 + j20.7<br>16.3 + j11.3|
|490<br>201.0 + j77.5<br>55.8 – j27.6<br>36.9 + j20.8<br>15.9 + j11.1|
|500<br>202.0 + j74.3<br>54.9 – j32.3<br>36.9 + j20.9<br>15.5 + j11.2|
|510<br>202.8 + j71.2<br>53.4 – j36.9<br>36.9 + j21.0<br>15.0 + j11.7|
|520<br>206.6 + j70.1<br>51.5 – j40.8<br>37.7 + j23.5<br>14.6 + j12.5|



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**----- Start of picture text -----**<br>
Zsource = Test circuit impedance as measured from gate to gate.<br>Zload = Test circuit impedance as measured from drain to drain.<br>Input Interstage Output<br>Matching Stage 1 Matching Stage 2 Matching<br>Network Network Network<br>50  50 <br>Zsource1 Zload1 Zsource2 Zload2<br>**----- End of picture text -----**<br>


**Figure 12. UHF Broadband Series Equivalent Source and Load Impedance — 350--520 MHz** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

11 

## **520 MHz NARROWBAND TEST FIXTURE** 

**Table 13. 520 MHz Narrowband Performance** VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, Pin = –1 dBm, f = 520 MHz 

|**Characteristic**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|
|Output Power|Pout|—|32.2|—|dBm|
|Power Gain|Gps|—|31.2|—|dB|
|Drain Efficiency|D|—|73.0|—|%|



**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

12 

## **520 MHz NARROWBAND TEST FIXTURE — 3**  **5**  **(7.6 cm**  **12.7 cm)** 

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**----- Start of picture text -----**<br>
C7<br>C14<br>C19<br>C13 D67108 C10 C18<br>C12 C2 C20<br>L4 L3<br>R3 C3 L7 L8<br>R4<br>C5 C6<br>C4<br>C1 L1 L2 R2 R1 L5<br>AFIC901N C23<br>C17 Rev. 0 C21<br>C8 C11<br>C15 [C16] C22<br>C9<br>**----- End of picture text -----**<br>


**Figure 13. AFIC901N Narrowband Test Circuit Component Layout — 520 MHz** 

**Table 14. AFIC901N Narrowband Test Circuit Component Designations and Values — 520 MHz** 

|**Part**|**Description**|**Part Number**|**Manufacturer**|
|---|---|---|---|
|C1|8.2 pF Chip Capacitor|ATC600F8R2BT250XT<br>AT|C|
|C2|240 pF Chip Capacitor|ATC600F241JT250XT<br>AT|C|
|C3|39 pF Chip Capacitor|ATC600F390JT250XT<br>AT|C|
|C4|15 pF Chip Capacitor|ATC600F150JT250XT<br>AT|C|
|C5|4.7 pF Chip Capacitor|ATC600F4R7BT250XT<br>AT|C|
|C6|12 pF Chip Capacitor|ATC600F120JT250XT<br>AT|C|
|C7, C8, C9, C10, C11|240 pF Chip Capacitors|ATC600F241JT250XT<br>AT|C|
|C12, C15|22F, 35 V Tantalum Capacitors|T491X226K035AT<br>Ke|met|
|C13, C16, C19, C22|0.1F Chip Capacitors|C0805C104K1RACTU<br>Ke|met|
|C14, C17, C18, C21|0.01F Chip Capacitors|C0805C103K5RACTU<br>Ke|met|
|C20, C23|330F, 35 V Electrolytic Capacitors|MCGPR35V337M10X16-RH<br>M|ulticomp|
|L1, L7, L8|5.5 nH Inductors|0806SQ5N5<br>C|oilcraft|
|L2|12.3 nH Inductor|0806SQ12N<br>C|oilcraft|
|L3, L4|22 nH Inductors|0807SQ22N<br>C|oilcraft|
|L5|8.9 nH Inductor|0806SQ8N9<br>C|oilcraft|
|R1|8.2, 1/3 W Chip Resistor|RL1220S-8R2-F<br>Su|sumu|
|R2|100, 1/4 W Chip Resistor|CRCW1206100RFKEA<br>Vi|shay|
|R3|1.0, 1/3 W Chip Resistor|RL1220S-1R0-F<br>Su|sumu|
|R4|75, 1/4 W Chip Resistor|SG73P2ATTD75R0F<br>K|OA Speer|
|PCB|Rogers R04350B, 0.030,r= 3.66|D67108<br>M|TL|



**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

13 

## **TYPICAL CHARACTERISTICS — 520 MHz NARROWBAND TEST FIXTURE** 

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**----- Start of picture text -----**<br>
2.5<br>VDD = 7.5 Vdc, f = 520 MHz, VGS1 = 3 Vdc<br>Pin = 0 dBm<br>2<br>1.5<br>Pin = –3 dBm<br>1<br>0.5<br>0<br>0 1 2 3 4 5<br>VGS2’, GATE--SOURCE VOLTAGE (VOLTS)<br>Figure 14. Output Power versus Gate--Source<br>Voltage, 2nd Stage<br>34 90<br>Gps<br>33 70<br>32 50<br>D<br>31 30<br>30 10<br>29 35<br>28 Pout 30<br>27 25<br>26 20<br>VDD = 7.5 Vdc, IDQ1 = 8 mA, IDQ2 = 24 mA, f = 520 MHz<br>25 15<br>--13 --11 –9 --7 --5 --3 --1 1 3 5 7<br>Pin, INPUT POWER (dBm)<br>, OUTPUT POWER (WATTS)<br>out<br>P<br>, DRAIN<br>D<br><br>EFFICIENCY (%)<br>, POWER GAIN (dB)<br>ps<br>G<br> OUTPUT<br>out<br>P POWER (dBm)<br>**----- End of picture text -----**<br>


**Figure 15. Power Gain, Drain Efficiency and Output Power versus Input Power** 

|**f**<br>**MHz**|**Zsource1**<br>|**Zload1**<br>|**Zsource2**<br>|**Zload2**<br>|
|---|---|---|---|---|
|520|50.3 + j30.9|84.4 + j93.6|3.5 + j17.8|12.3 + j11.4|
|Zsource =<br>Zload<br>=|Test circuit impedance as measured from gate to gate.<br>Test circuit impedance as measured from drain to drain.||||



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**----- Start of picture text -----**<br>
Input Interstage Output<br>Matching Stage 1 Matching Stage 2 Matching<br>Network Network Network<br>50  50 <br>Zsource1 Zload1 Zsource2 Zload2<br>**----- End of picture text -----**<br>


**Figure 16. Narrowband Series Equivalent Source and Load Impedance — 520 MHz** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

14 

2.6  2.6 solder pad with thermal via structure. All dimensions in mm. 

**==> picture [154 x 193] intentionally omitted <==**

**==> picture [130 x 191] intentionally omitted <==**

**----- Start of picture text -----**<br>
0.50<br>3.00 4.40<br>0.30<br>**----- End of picture text -----**<br>


**Figure 17. PCB Pad Layout for 24--Lead QFN 4**  **4** 

**==> picture [80 x 51] intentionally omitted <==**

**----- Start of picture text -----**<br>
A901<br>WLYW<br>**----- End of picture text -----**<br>


**Figure 18. Product Marking** 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

15 

## **PACKAGE DIMENSIONS** 

**==> picture [46 x 44] intentionally omitted <==**

**==> picture [241 x 178] intentionally omitted <==**

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

16 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

17 

**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

18 

## **PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS** 

Refer to the following resources to aid your design process. 

## **Application Notes** 

- AN1955: Thermal Measurement Methodology of RF Power Amplifiers 

## **Software** 

- .s2p File 

- Electromigration MTTF Calculator 

- RF High Power Model 

## **Development Tools** 

- Printed Circuit Boards 

## **To Download Resources Specific to a Given Part Number:** 

1. Go to http://www.nxp.com/RF 

2. Search by part number 

3. Click part number link 

4. Choose the desired resource from the drop down menu 

## **REVISION HISTORY** 

**==> picture [60 x 60] intentionally omitted <==**

The following table summarizes revisions to this document. 

|**Revision**|**Date**|**Description**|
|---|---|---|
|0|Jan. 2016|<br>Initial Release of Data Sheet|



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**AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

19 

## _**How to Reach Us:**_ 

**Home Page:** freescale.com 

**Web Support:** freescale.com/support 

Information in this document is provided solely to enable system and software implementers to use Freescale products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits based on the information in this document. 

Freescale reserves the right to make changes without further notice to any products herein. Freescale makes no warranty, representation, or guarantee regarding the suitability of its products for any particular purpose, nor does Freescale assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale data sheets and/or specifications can and do vary in different applications, and actual performance may vary over time. All operating parameters, including “typicals,” must be validated for each customer application by customer’s technical experts. Freescale does not convey any license under its patent rights nor the rights of others. Freescale sells products pursuant to standard terms and conditions of sale, which can be found at the following address: freescale.com/SalesTermsandConditions. 

Freescale and the Freescale logo are trademarks of Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast is a trademark of Freescale Semiconductor, Inc. All other product or service names are the property of their respective owners. E 2016 Freescale Semiconductor, Inc. 

## **AFIC901N** 

RF Device Data Freescale Semiconductor, Inc. 

Document Number: AFIC901N 20Rev. 0, 1/2016
Updated at April 10, 2026
NXP Semiconductors is a global leader in secure connectivity solutions, driving innovation across the automotive, industrial, IoT, mobile, and communications infrastructure markets. By developing advanced, purpose-built technologies, NXP enables devices to sense, think, connect, and act intelligently, delivering rigorously tested components that make the connected world safer and more efficient. Within the semiconductor space, NXP is highly regarded for its extensive range of high-performance integrated circuits and discrete devices. The brand's portfolio excels in drivers and interfaces, featuring a comprehensive selection of I/O expanders designed to streamline complex system architectures. For demanding high-frequency and wireless applications, NXP provides industry-leading RF FETs and RF/PIN diodes engineered to deliver exceptional signal integrity, efficiency, and reliability. The NXP product lineup further extends to essential discrete components, including versatile bipolar transistors, JFETs, and small signal diodes optimized for precision switching and amplification. Additionally, the portfolio supports advanced automation and smart applications with precision IC sensors, such as MEMS accelerometers, alongside specialized power management solutions like AC/DC LED driver ICs and single MOSFETs for cutting-edge electronics design.
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