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AFGHL75T65SQDT
IGBT, 80 A, 1.6 V, 375 W, 650 V, TO-247, 3 Pins
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- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 375W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.76 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Field Stop Trench IGBT 650 V, 75 A ## AFGHL75T65SQDT Using the novel field stop 4th generation IGBT technology and the Stealth Diode technology, AFGHL75T65SQDT offers the optimum performance with both low conduction and switching losses for a high efficiency operation in various applications, especially totem pole bridgeless PFC and DCDC block as well. ## **Features** - AEC−Q101 Qualified **www.onsemi.com** **75 A, 650 V VCESat = 1.6 V** - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co−efficient for Easy Parallel Operating **==> picture [83 x 192] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>G<br>C<br>E<br>TO−247−3L<br>CASE 340CX<br>**----- End of picture text -----**<br> - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A - 100% of the Parts are Tested for ILM (Note 2) - Fast Switching - Tight Parameter Distribution - RoHS Compliant ## **Typical Applications** - Automotive HEV−EV Onboard Chargers - Automotive HEV−EV DC−DC Converters - Totem Pole Bridgeless PFC ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector−to−Emitter Voltage|VCES|650|V| |Gate−to−Emitter Voltage<br>Transient Gate−to−Emitter Voltage|VGES|±20<br>±30|V| |Collector Current (Note 1)<br>@ TC= 25°C<br>@ TC= 100°C|IC|80<br>75|A| |Pulsed Collector Current (Note 2)|ILM|300|A| |Pulsed Collector Current (Note 3)|ICM|300|A| |Diode Forward Current<br>@ TC= 25°C<br>@ TC =100°C|IF|80<br>75|A| |Pulsed Diode Maximum Forward Current|IFM(2)|300|A| |Maximum Power Dissipation @ TC= 25°C<br>@ TC= 100°C|PD|375<br>188|W| |Operating Junction<br>/ Storage Temperature Range|TJ,<br>TSTG|−55 to<br>+175|°C| |Maximum Lead Temp. for Soldering<br>Purposes, 1/8″from case for 5 seconds|TL|300|°C| ## **MARKING DIAGRAM** **==> picture [170 x 129] intentionally omitted <==** **----- Start of picture text -----**<br> &Y&Z&3&K<br>AFGHL<br>75T65SQDT<br>Tw<br>&Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = 3−Digit Data Code<br>&K = 2−Digit Lot Traceability Code<br>AFGHL75T65SQDT = Specific Device Code<br>**----- End of picture text -----**<br> Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. ## **ORDERING INFORMATION** 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 17 Inductive Load **Device Package Shipping** 3. Repetitive Rating: pulse width limited by max. Junction temperature AFGHL75T65SQDT TO−247−3L 30 Units / Rail —— ~~————~~ Publication Order Number: **AFGHL75T65SQDT/D** **1** © Semiconductor Components Industries, LLC, 2019 **November, 2019 − Rev. 0** **AFGHL75T65SQDT** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.4|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|0.65|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V,<br>IC= 1 mA||BVCES|650|−|−|V| |Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V,<br>IC= 1 mA||�BVCES<br>�TJ|−|0.6|−|V/°C| |Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V,<br>VCE= 650 V||ICES|−|−|250|�A| |Gate leakage current, collector−emitter<br>short−circuited|VGE= 20 V,<br>VCE= 0 V||IGES|−|−|±400|nA| |**ON CHARACTERISTICS**|||||||| |Gate−emitter threshold voltage|VGE= VCE, IC= 75 mA||VGE(th)|3.4|4.9|6.4|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 75 A<br>VGE= 15 V, IC= 75 A, TJ= 175°C||VCE(sat)|−<br>−|1.6<br>1.95|2.1<br>−|V| |**DYNAMIC CHARACTERISTICS**|||||||| |Input capacitance|VCE= 30 V,<br>VGE= 0 V,<br>f = 1 MHz||Cies|−|4617|−|pF| |Output capacitance|||Coes|−|152|−|| |Reverse transfer capacitance|||Cres|−|13|−|| |Gate charge total|VCE= 400 V,<br>IC= 75 A,<br>VGE= 15 V||Qg|−|136|−|nC| |Gate−to−emitter charge|||Qge|−|25|−|| |Gate−to−collector charge|||Qgc|−|32|−|| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 37.5 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load||td(on)|−|21|−|ns| |Rise time|||tr|−|16|−|| |Turn−off delay time|||td(off)|−|113|−|| |Fall time|||tf|−|8|−|| |Turn−on switching loss|||Eon|−|0.77|−|mJ| |Turn−off switching loss|||Eoff|−|0.23|−|| |Total switching loss|||Ets|−|1.0|−|| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 75 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load||td(on)|−|24|−|ns| |Rise time|||tr|−|44|−|| |Turn−off delay time|||td(off)|−|106|−|| |Fall time|||tf|−|68|−|| |Turn−on switching loss|||Eon|−|2.12|−|mJ| |Turn−off switching loss|||Eoff|−|1.14|−|| |Total switching loss|||Ets|−|3.26|−|| **www.onsemi.com** **2** **AFGHL75T65SQDT** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||| |Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 37.5 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load|td(on)|−|20|−|ns| |Rise time||tr|−|19|−|| |Turn−off delay time||td(off)|−|124|−|| |Fall time||tf|−|7.7|−|| |Turn−on switching loss||Eon|−|1.52|−|mJ| |Turn−off switching loss||Eoff|−|0.43|−|| |Total switching loss||Ets|−|1.95|−|| |Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 75 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load|td(on)|−|24|−|ns| |Rise time||tr|−|45|−|| |Turn−off delay time||td(off)|−|114|−|| |Fall time||tf|−|76|−|| |Turn−on switching loss||Eon|−|3.32|−|mJ| |Turn−off switching loss||Eoff|−|1.42|−|| |Total switching loss||Ets|−|4.74|−|| |**DIODE CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 75 A, TC= 25°C|VFM|−|1.65|2.1|V| ||IF= 75 A, TC= 175°C||−|1.55|−|| |Reverse Recovery Energy|IF= 75 A, dIF/dt = 200 A/s, TC= 175°C|Erec|−|150|−|�J| |Diode Reverse Recovery Time|IF= 75 A, dIF/dt = 200 A/s, TC= 25°C|Trr|−|75|−|ns| ||IF= 75 A, dIF/dt = 200 A/s, TC= 175°C||−|328|−|| |Diode Reverse Recovery Charge|IF= 75 A, dIF/dt = 200 A/s, TC= 25°C|Qrr|−|173|−|nC| ||IF= 75 A, dIF/dt = 200 A/s, TC= 175°C||−|2193|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **AFGHL75T65SQDT** ## **TYPICAL CHARACTERISTICS** **==> picture [486 x 592] intentionally omitted <==** **----- Start of picture text -----**<br> 300 300<br>TC = 25 � C 20V TC = 175 � C 20V<br>15V 15V<br>240 12V 240 12V<br>10V 10V<br>VGE = 8V<br>180 180<br>V GE = 8V<br>120 120<br>60 60<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V] Collector−Emitter Voltage, VCE [V]<br>Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics<br>(TJ = 25 � C) (TJ = 175 � C)<br>300 3.0<br>Common Emitter Common Emitter<br>V GE = 15V V GE = 15V<br>240 TT C C = 25= 175 � C � C<br>150A<br>180<br>2.0<br>120 75A<br>60<br>IC = 40A<br>0 1.0<br>0 1 2 3 4 5 −100 −50 0 50 100 150 200<br>Collector−Emitter Voltage, VCE [V] �<br>Collector−Emitter Case Temperature, TC [ C]<br>Figure 3. Typical Saturation Voltage Figure 4. Saturation Voltage vs. Case Temperature<br>Characteristics at Variant Current Level<br>20<br>20<br>Common Emitter<br>Common Emitter T C = 25 � C T C = 175 � C<br>16 16<br>12 12<br>8 8<br>150A 150A<br>75A 75A<br>4 IC = 40A 4 IC = 40A<br>0 0<br>4 8 12 16 20 4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V] Gate−Emitter Voltage, VGE [V]<br> [A]C [A]<br>Collector Current, I C<br>Collector Current, I<br> [V]<br>[A] CE<br>C<br>Collector Current, I<br>Collector−Emitter Voltage, V<br>[V] [V]<br>CE CE<br>Collector −Emitter Voltage, V Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Voltage vs. VGE (TJ = 25** � **C)** **Figure 6. Saturation Voltage vs. VGE (TJ = 175** � **C)** **www.onsemi.com** **4** **AFGHL75T65SQDT** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [487 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>Common Emitter<br>10000 T C = 25 � C V CC = 200V<br>C ies 12 300V<br>400V<br>1000<br>9<br>100 C oes<br>6<br>10 C res 3<br>Common Emitter<br>V GE = 0V, f = 1Mhz<br>T C = 25 � C<br>1 0<br>1 10 30 0 30 60 90 120 150<br>Collector−Emitter Voltage, VCE [V] Gate Charge, Qg [nC]<br>Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characteristics<br>200 1000<br>td(off)<br>tr<br>100<br>tf<br>td(on) Common EmitterVCC = 400V, VGE = 15V Common Emitter V CC = 400V, V GE = 15V,<br>IC = 75A IC = 75A<br>TC = 25 � C TC = 25 � C<br>20 TC = 175 � C 10 TC = 175 � C<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, R g [ � ] Gate Resistance, R g [ � ]<br>Figure 9. Turn−On Characteristics Figure 10. Turn−Off Characteristics<br>vs. Gate Resistance vs. Gate Resistance<br>1000 1000<br>Common Emitter<br>V CC = 400V, VGE = 15V,<br>R G = 4.7 �<br>TC = 25 � C<br>TC = 175 � C t d(off)<br>100 100<br>tr tf<br>t d(on)<br>10 10<br>Common Emitter<br>VCC = 400V, V GE = 15V,<br>R G = 4.7 �<br>T C = 25 � C<br>T C = 175 � C<br>1 1<br>0 30 60 90 120 150 0 30 60 90 120 150<br>Collector Current, I C [A] Collector Current, IC [A]<br>[V]<br>GE<br>Capacitance [pF] Gate−Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>Switching Time [ns]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 11. Turn−On Characteristics vs. Collector Current** **Figure 12. Turn−Off Characteristics vs. Collector Current** **www.onsemi.com** **5** **AFGHL75T65SQDT** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [229 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>E on<br>Common Emitter<br>V CC = 400V, VGEGE = 15V,<br>ICT CC C C= 75A = 75A<br>T CC C C= 75A = 25= 175 � C<br>1000 E off T CICT CC C C= 75A = 175 � C<br>0 10 20 30 40 50<br>Gate Resistance, R g g [ � ]<br>Switching Loss [uJ]<br>**----- End of picture text -----**<br> **==> picture [488 x 577] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 10000<br>E on<br>E on<br>1000<br>E off<br>Common Emitter Common Emitter<br>V CC = 400V, VGEGE = 15V, V CC = 400V, V GE = 15V,<br>1000 E off T CICT CC C C= 75A = 25= 175 � C � C 100 RTT GCC = 25= 175 = 4.7 � C � �C<br>0 30 60 90 120 150<br>0 10 20 30 40 50<br>Gate Resistance, R g g [ � ] Collector Current, I C [A]<br>Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector<br>Current<br>500 300<br>DC<br>100 10 � s 100<br>100 � s T C=175 � C<br>1ms<br>10 10ms<br>TC =25 � C<br>10<br>0.11 *Notes:3. Single Pulse2. T1. TCJ = 175= 25 � C � C 1 T C =75 � C Common EmitterT T TCCC = 25 = 75 = 175 � � C C � C<br>1 10 100 1000<br>0 1 2 3 4 5<br>Collector − Emitter Voltage, VCE [V]<br>Forward Voltage, VF [V]<br>Figure 15. SOA Characteristics Figure 16. Forward Characteristics<br>20 500<br>T C = 25 � C T C = 25 � C<br>TC = 175 � C T C [= 175] [�] [C]<br>16 400<br>di/dt = 200A/uS<br>12 300<br>di/dt = 100A/uS<br>8 200<br>di/dt = 200A/uS di/dt = 200A/uS di/dt = 100A/uS<br>4 100<br>di/dt = 100A/uS<br>0 0<br>0 20 40 60 80 0 20 40 60 80<br>Forward Current, VF [V] Forward Current, VF [V]<br>Switching Loss [uJ] Switching Loss [uJ]<br>[A]<br>C [A]<br> F<br>Collector Current, I Forward Current, I<br>[A] [ns]<br>rr rr<br>Reverse Recovery Current, I Reverse Recovery Time, t<br>**----- End of picture text -----**<br> **Figure 18. Reverse Recovery Time Stored Charge** **Figure 17. Reverse Recovery Current** **www.onsemi.com** **6** **AFGHL75T65SQDT** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [224 x 156] intentionally omitted <==** **----- Start of picture text -----**<br> 2500<br>T C = 25 � C<br>TC = 175 � C<br>2000<br>1500<br>1000<br>di/dt = 200A/uS<br>di/dt = 100A/uS<br>500<br>0<br>0 20 40 60 80<br>Forward Current, VF [V]<br>[nC]<br>rr<br>Reverse Recovery Charge, Q<br>**----- End of picture text -----**<br> **Figure 19. Stored Charge** **==> picture [435 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.5<br>0.1 0.2<br>0.1<br>P DM<br>0.05 [t] 1<br>0.02 Duty Factor, D = t1/t2 t 2<br>0.01 Single Pulse Peak T = Pdm x Zthjc + Tj c<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 20. Transient Thermal Impedance of IGBT** **==> picture [443 x 178] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.5<br>0.2<br>0.1 0.1<br>0.05<br>0.02<br>0.01<br>0.01 P DM<br>Single Pulse [t] 1<br>t2<br>Duty Factor, D = t1/t2<br>Peak T = Pdm x Zthjc + T j c<br>0.001<br>0.0000110 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 101 [0] 1010 [1]<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 21. Transient Thermal Impedance of Diode** **www.onsemi.com** **7** **AFGHL75T65SQDT** ## **PACKAGE DIMENSIONS** **TO−247−3LD** CASE 340CX ISSUE O **==> picture [443 x 525] intentionally omitted <==** **www.onsemi.com** **8** **AFGHL75T65SQDT** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **PUBLICATION ORDERING INFORMATION** **LITERATURE FULFILLMENT** : **Email Requests to:** orderlit@onsemi.com **ON Semiconductor Website:** www.onsemi.com **TECHNICAL SUPPORT North American Technical Support:** Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 **Europe, Middle East and Africa Technical Support:** Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative **www.onsemi.com** ◊ **9**
Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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