AFGHL75T65SQ

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## **Is Now** 

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**onsemi** and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as-is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. 

Field Stop Trench IGBT 650 V, 75 A, TO247 

## AFGHL75T65SQ 

Using the novel field stop 4th generation IGBT technology, AFGHL75T65SQ offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, which does not require reverse recovery specification. 

## **Features** 

- Maximum Junction Temperature: TJ = 175°C 

- Positive Temperature Co−efficient for Easy Parallel Operating 

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**75 A, 650 V VCESat = 1.6 V (Typ.)** 

- High Current Capability 

- Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 75 A 

- 100% of the Parts are Tested for ILM (Note 2) 

- Fast Switching 

- Tight Parameter Distribution 

- AEC−Q101 Qualified and PPAP Capable 

## **Typical Applications** 

- Automotive 

- On & Off Board Chargers 

- DC−DC Converters 

- PFC 

- Industrial Inverter 

## **MAXIMUM RATINGS** 

|**Rating**|**Symbol**|**Value**|**Unit**|
|---|---|---|---|
|Collector−to−Emitter Voltage|VCES|650|V|
|Gate−to−Emitter Voltage<br>Transient Gate−to−Emitter Voltage|VGES|±20<br>±30|V|
|Collector Current (Note 1)<br>@ TC= 25°C<br>@ TC= 100°C|IC|80<br>75|A|
|Pulsed Collector Current (Note 2)|ILM|300|A|
|Pulsed Collector Current (Note 3)|ICM|300|A|
|Maximum Power Dissipation<br>@ TC= 25°C<br>@ TC= 100°C|PD|375<br>188|W|
|Operating Junction / Storage Temperature<br>Range|TJ,<br>TSTG|−55 to<br>+175|°C|
|Maximum Lead Temp. for Soldering<br>Purposes, 1/8″from case for 10 seconds|TL|265|°C|



Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 

1. Value limited by bond wire 

2. VCC = 400 V, VGE = 15 V, IC = 300 A, RG = 15 Inductive Load, 100% of the Parts are Tested. 

3. Repetitive Rating: pulse width limited by max. Junction temperature 

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C<br>G<br>E<br>G<br>C<br>E<br>TO−247−3LD<br>CASE 340CX<br>**----- End of picture text -----**<br>


## **MARKING DIAGRAM** 

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AYWWZZ<br>AFGHL<br>75T65SQ<br>Tw<br>A = Assembly Location<br>YWW = 3−Digit Date Code<br>ZZ = 2−Digit Lot Traceability Code<br>AFGHL75T65SQ = Specific Device Code<br>ORDERING INFORMATION<br>Device Package Shipping<br>AFGHL75T65SQ TO−247−3L 30 Units / Rail<br>——<br>**----- End of picture text -----**<br>


Publication Order Number: **AFGHL75T65SQ/D** 

**1** 

© Semiconductor Components Industries, LLC, 2020 **July, 2020 − Rev. 0** 

**AFGHL75T65SQ** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Rating**|**Symbol**|**Max**|**Unit**|
|Thermal resistance junction−to−case, for IGBT|R�JC|0.4|°C/W|
|Thermal resistance junction−to−ambient|R�JA|40|°C/W|



## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|---|
|**OFF CHARACTERISTICS**||||||||
|Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V,<br>IC= 1 mA||BVCES|650|−|−|V|
|Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V,<br>IC= 1 mA||�BVCES<br>�TJ|−|0.6|−|V/°C|
|Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V,<br>VCE= 650 V||ICES|−|−|250|�A|
|Gate leakage current, collector−emitter<br>short−circuited|VGE= 20 V,<br>VCE= 0 V||IGES|−|−|±400|nA|
|**ON CHARACTERISTICS**||||||||
|Gate−emitter threshold voltage|VGE= VCE, IC= 75 mA||VGE(th)|3.4|4.9|6.4|V|
|Collector−emitter saturation voltage|VGE= 15 V, IC= 75 A<br>VGE= 15 V, IC= 75 A, TJ= 175°C||VCE(sat)|−<br>−|1.6<br>2.0|2.1<br>−|V|
|**DYNAMIC CHARACTERISTICS**||||||||
|Input capacitance|VCE= 30 V,<br>VGE= 0 V,<br>f = 1 MHz||Cies|−|4574|−|pF|
|Output capacitance|||Coes|−|289.4|−||
|Reverse transfer capacitance|||Cres|−|11.2|−||
|Gate charge total|VCE= 400 V,<br>IC= 75 A,<br>VGE= 15 V||Qg|−|139|−|nC|
|Gate−to−emitter charge|||Qge|−|25|−||
|Gate−to−collector charge|||Qgc|−|33|−||
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||||
|Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 37.5 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load<br>Energy losses include “tail” and diode<br>reverse recovery. Diode from<br>AFGHL75T65SQD.||td(on)|−|23|−|ns|
|Rise time|||tr|−|17|−||
|Turn−off delay time|||td(off)|−|112|−||
|Fall time|||tf|−|8|−||
|Turn−on switching loss|||Eon|−|0.61|−|mJ|
|Turn−off switching loss|||Eoff|−|0.21|−||
|Total switching loss|||Ets|−|0.82|−||
|Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 75 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load<br>Energy losses include “tail” and diode<br>reverse recovery. Diode from<br>AFGHL75T65SQD.||td(on)|−|25|−|ns|
|Rise time|||tr|−|46|−||
|Turn−off delay time|||td(off)|−|106|−||
|Fall time|||tf|−|67|−||
|Turn−on switching loss|||Eon|−|1.86|−|mJ|
|Turn−off switching loss|||Eoff|−|1.13|−||
|Total switching loss|||Ets|−|2.99|−||



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## **AFGHL75T65SQ** 

## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) 

|**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**|
|---|---|---|---|---|---|---|
|**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||
|Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 37.5 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load<br>Energy losses include “tail” and diode<br>reverse recovery. Diode from<br>AFGHL75T65SQD.|td(on)|−|21|−|ns|
|Rise time||tr|−|19|−||
|Turn−off delay time||td(off)|−|126|−||
|Fall time||tf|−|7|−||
|Turn−on switching loss||Eon|−|1.20|−|mJ|
|Turn−off switching loss||Eoff|−|0.41|−||
|Total switching loss||Ets|−|1.61|−||
|Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 75 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load<br>Energy losses include “tail” and diode<br>reverse recovery. Diode from<br>AFGHL75T65SQD.|td(on)|−|24|−|ns|
|Rise time||tr|−|46|−||
|Turn−off delay time||td(off)|−|115|−||
|Fall time||tf|−|72|−||
|Turn−on switching loss||Eon|−|2.84|−|mJ|
|Turn−off switching loss||Eoff|−|1.35|−||
|Total switching loss||Ets|−|4.20|−||



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**AFGHL75T65SQ** 

## **TYPICAL CHARACTERISTICS** 

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300 300<br>TC = 25 ° C 20 V 10 V TC = 175 ° C 20 V<br>VGE = 8 V<br>240 240 10 V<br>15 V 15 V<br>12 V 12 V<br>180 180<br>VGE = 8 V<br>120 120<br>60 60<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics<br>(Tc = 25 � C) (Tc = 175 � C)<br>150 300 TC = 25 ° C<br>Common Emitter<br>120 VCE = 20 V 240 T C = 175 ° C<br>90 180<br>60 120<br>30 60 Common Emitter<br>0 T C  = 175 ° C TC = 25 ° C 0 VGE = 15 V<br>0 2 4 6 8 10 0 1 2 3 4 5<br>IC, COLLECTOR CURRENT (A) VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>Figure 3. Transfer Characteristics Figure 4. Typical Saturation Voltage<br>Characteristics<br>100 400<br>350<br>80<br>300<br>250<br>60<br>200<br>40<br>150<br>100<br>20<br>50<br>0 0<br>25 50 75 100 125 150 175 25 50 75 100 125 150 175<br>TC, COLLECTOR−EMITTER CASE TEMPERATURE ( ° C) TC, COLLECTOR−EMITTER CASE TEMPERATURE ( ° C)<br>, COLLECTOR CURRENT (A) , COLLECTOR CURRENT (A)<br>IC IC<br>, GATE−EMITTER VOLTAGE (V) , COLLECTOR CURRENT (A)<br>IC<br>GE<br>V<br>, COLLECTOR CURRENT (A) , POWR DISSIPATION (W)TOT<br>IC P<br>**----- End of picture text -----**<br>


**Figure 5. Collector Current Derating** 

**Figure 6. Power Dissipation** 

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**AFGHL75T65SQ** 

## **TYPICAL CHARACTERISTICS** 

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3.0<br>150 A<br>Common Emitter<br>VGE = 15 V<br>2.5<br>75 A<br>2.0<br>1.5<br>IC = 40 A<br>1.0<br>−100 −50 0 50 100 150 200<br>TC, COLLECTOR−EMITTER CASE TEMPERATURE ( ° C)<br>Figure 7. Saturation Voltage vs. Case<br>Temperature at Variant Current Level<br>20<br>Common Emitter<br>TC = 175 ° C<br>16<br>12<br>8 150 A<br>75 A<br>4<br>0 IC = 37.5 A<br>4 8 12 16 20<br>VGE, GATE−EMITTER VOLTAGE (V)<br>Figure 9. Saturation Voltage vs. VGE<br>(Tc = 175 � C)<br>10K<br>Cies<br>1K<br>C oes<br>100<br>Cres<br>10 Common Emitter<br>VGE = 0 V, f = 1 MHz<br>TC = 25 ° C<br>1<br>1 10 30<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>CAPACITANCE (pF)<br>**----- End of picture text -----**<br>


**Figure 11. Capacitance Characteristics** 

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20<br>Common Emitter<br>TC = 25 ° C<br>16<br>12<br>8<br>150 A<br>75 A<br>4<br>0 IC = 37.5 A<br>4 8 12 16 20<br>VGE, GATE−EMITTER VOLTAGE (V)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>**----- End of picture text -----**<br>


**Figure 8. Saturation Voltage vs. VGE (Tc = 25** � **C)** 

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20<br>Common Emitter<br>TC = −40 ° C<br>16<br>12<br>8<br>150 A<br>75 A<br>4<br>0 IC = 37.5 A<br>4 8 12 16 20<br>VGE, GATE−EMITTER VOLTAGE (V)<br>Figure 10. Saturation Voltage vs. VGE<br>(Tc = −40 � C)<br>15<br>Common Emitter<br>TC = 25 ° C<br>12<br>VCC = 200 V<br>300 V<br>9<br>400 V<br>6<br>3<br>0<br>0 30 60 90 120 150<br>Qg, GATE CHARGE (nC)<br>, COLLECTOR−EMITTER VOLTAGE (V)<br>CE<br>V<br>, GATE−EMITTER VOLTAGE (V)<br>GE<br>V<br>**----- End of picture text -----**<br>


**Figure 12. Gate Charge Characteristic (Tc = 25** � **C)** 

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**AFGHL75T65SQ** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
200<br>TC = 25 ° C<br>TC = 175 ° C<br>100<br>t r<br>t d(on)<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>RG = 4.7  �<br>10<br>0 10 20 30 40 50<br>Rg, GATE RESISTANCE ( � )<br>SWITCHNG TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 13. Turn−On Characteristics vs. Gate Resistance** 

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1000<br>TC = 25 ° C<br>TC = 175 ° C<br>td(off)<br>100<br>tf<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>IC = 75 A<br>10<br>0 10 20 30 40 50<br>Rg, GATE RESISTANCE ( � )<br>SWITCHING TIME (ns)<br>**----- End of picture text -----**<br>


**Figure 14. Turn−Off Characteristics vs. Gate Resistance** 

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**----- Start of picture text -----**<br>
1K 1000<br>TTCC = 25 = 175 ° C ° C TTC C == 175 25 ° C ° C<br>tr td(off)<br>100 100<br>td(on)<br>10 10 tf<br>Common Emitter Common Emitter<br>V CC  = 400 V, V GE  = 15 V VCC = 400 V, VGE = 15 V<br>RG = 4.7  � RG = 4.7  �<br>1 1<br>0 30 60 90 120 150 0 30 60 90 120 150<br>IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)<br>Figure 15. Turn−On Characteristics vs. Figure 16. Turn−Off Characteristics vs.<br>Collector Current Collector Current<br>10K 10K<br>TC = 25 ° C TC = 25 ° C<br>TC = 175 ° C TC = 175 ° C<br>5K<br>Eon<br>1K<br>Eon<br>E off<br>100<br>E off<br>Common Emitter Common Emitter<br>VCC = 400 V, VGE = 15 V V CC  = 400 V, V GE  = 15 V<br>IC = 75 A RG = 4.7  �<br>500 10<br>0 10 20 30 40 50 0 30 60 90 120 150<br>Rg, GATE RESISTANCE ( � ) IC, COLLECTOR CURRENT (A)<br>SWITCHING TIME (ns) SWITCHING TIME (ns)<br>J) J)<br>� �<br>SWITCHING LOSS ( SWITCHING LOSS (<br>**----- End of picture text -----**<br>


**Figure 17. Switching Loss vs. Gate Resistance** 

**Figure 18. Switching Loss vs. Collector Current** 

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**AFGHL75T65SQ** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
500<br>10 � s<br>100<br>100  � s<br>10<br>1 ms<br>1 10 m s<br>Single Pulse TC = 25 ° C DC<br>T J  = 175 ° C<br>0.1<br>1 10 100 1000<br>VCE, COLLECTOR−EMITTER VOLTAGE (V)<br>, COLLECTOR CURRENT (A)<br>IC<br>**----- End of picture text -----**<br>


**Figure 19. SOA Characteristics (FBSOA)** 

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1<br>0.5<br>0.1 0.2<br>0.1<br>0.05<br>Single Pulse<br>0.01 P DM Peak TJ = PDM x Z � JC + TC<br>Duty Factor, D = t1/t2<br>0.02<br>0.01 t1<br>t 2<br>0.001<br>0.0001 0.001 0.01 0.1 1 10 100<br>RECTANGULAR PULSE DURATION (sec)<br>THERMAL RESPONSE (Zthjc)<br>**----- End of picture text -----**<br>


**Figure 20. Transient Thermal Impedance of IGBT** 

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**AFGHL75T65SQ** 

## **PACKAGE DIMENSIONS** 

**TO−247−3LD** CASE 340CX ISSUE O 

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**AFGHL75T65SQ** 

ON Semiconductor and      are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

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