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AFGHL50T65SQDC
IGBT, 100 A, 1.6 V, 238 W, 650 V, TO-247, 3 Pins
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- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 238W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 100A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 4.37 € |
| Current stock | 200+ |
| Lead time | 30 days |
Datasheet
## AFGHL50T65SQDC ## AFGHL50T65SQDC Hybrid Using the novel field stop 4 IGBT[[th]] 50 A, 650 V Using the novel field stop 4[[th]] generation IGBT technology and the 1.5[th] generation SiC Schottky Diode technology, AFGHL50T65SQDC offers the optimum performance with both low conduction and switching losses for high efficiency operations in various applications, especially totem pole bridgeless PFC and Inverter. ## **Features** - AEC−Q101 Qualified - Maximum Junction Temperature : TJ = 175°C **www.onsemi.com** **50 A, 650 V VCESat = 1.6 V (Typ.)** - Positive Temperature Co−efficient for Easy Parallel Operating - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @IC = 50 A - Fast Switching - Tighten Parameter Distribution - No Reverse Recovery/No Forward Recovery ## **Typical Applications** - Automotive - On & Off Board Chargers - DC−DC Converters - PFC - Industrial Inverter ## **MAXIMUM RATINGS** |**MAXIMUM RATINGS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Collector to Emitter Voltage|VCES|650|V| |Gate to Emitter Voltage<br>Transient Gate to Emitter Voltage|VGES|±20<br>±30|V| |Collector Current<br>@TC= 25°C<br>@TC= 100°C|IC|100<br>50|A| |Pulsed Collector Current (Note 1)|ILM|200|A| |Pulsed Collector Current (Note 2)|ICM|200|A| |Diode Forward Current<br>@TC= 25°C<br>@TC= 100°C|IF|40<br>20|A| |Pulsed Diode Maximum Forward Current|IFM|200|A| |Maximum Power Dissipation @TC= 25°C<br>@TC= 100°C|PD|238<br>119|W| |Operating Junction<br>/ Storage Temperature Range|TJ,<br>TSTG|±55 to<br>+175|°C| |Maximum Lead Temp. for Soldering<br>Purposes, 1/8″from case for 5 seconds|TL|300|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 26 Inductive Load, 100% Tested. **==> picture [85 x 199] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>-: E<br>G<br>C<br>E<br>TO−247−3L<br>CASE 340CX<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **==> picture [46 x 22] intentionally omitted <==** **----- Start of picture text -----**<br> &Y&Z&3&K<br>AFGHL<br>50T65SQDC<br>**----- End of picture text -----**<br> **==> picture [170 x 48] intentionally omitted <==** **----- Start of picture text -----**<br> &Y = ON Semiconductor Logo<br>&Z = Assembly Plant Code<br>&3 = 3−Digit Data Code<br>&K = 2−Digit Lot Traceability Code<br>AFGHL50T65SQDC = Specific Device Code<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |AFGHL50T65SQDC|AFGHL50T65SQDC<br>TO−247−3L|30 Units / Rail| 2. Repetitive Rating: pulse width limited by max. Junction temperature. Publication Order Number: **AFGHL50T65SQDC/D** **1** © Semiconductor Components Industries, LLC, 2019 **August, 2019 − Rev. 2** **AFGHL50T65SQDC** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.63|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|1.55|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Test Conditions**||**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**|||||||| |Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V,<br>IC= 1 mA||BVCES|650|−|−|V| |Temperature Coefficient of Breakdown<br>Voltage|VGE= 0 V,<br>IC= 1 mA||�BVCES<br>�TJ|−|0.6|−|V/°C| |Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V,<br>VCE= 650 V||ICES|−|−|250|�A| |Gate leakage current, collector−emitter<br>short−circuited|VGE= 20 V,<br>VCE= 0 V||IGES|−|−|±400|nA| |**ON CHARACTERISTICS**|||||||| |Gate−emitter threshold voltage|VGE= VCE, IC= 50 mA||VGE(th)|3.4|4.9|6.4|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 50 A<br>VGE= 15 V, IC= 50 A,<br>TJ= 175°C||VCE(sat)|−<br>−|1.6<br>1.9|2.1<br>−|V| |**DYNAMIC CHARACTERISTICS**|||||||| |Input capacitance|VCE= 30 V,<br>VGE= 0 V,<br>f = 1 MHz||Cies|−|3098|−|pF| |Output capacitance|||Coes|−|265|−|| |Reverse transfer capacitance|||Cres|−|9|−|| |Gate charge total|VCE= 400 V,<br>IC= 50 V,<br>VGE= 15 V||Qg|−|94|−|nC| |Gate to emitter charge|||Qge|−|18|−|| |Gate to collector charge|||Qgc|−|23|−|| |**SWITCHING CHARACTERISTICS**|||||||| |Turn−on delay time|TJ= 25°C<br>VCC = 400 V,<br>IC = 12.5 A<br>RG= 4.7�<br>VGE= 15 V<br>Inductive Load||td(on)|−|17.6|−|ns| |Rise time|||tr|−|6.4|−|| |Turn−off delay time|||td(off)|−|94.4|−|| |Fall time|||tf|−|14.4|−|| |Turn−on switching loss|||Eon|−|131|−|�J| |Turn−off switching loss|||Eoff|−|96|−|| |Total switching loss|||Ets|−|227|−|| |Turn−on delay time|TJ= 25°C<br>VCC = 400 V,<br>IC = 25 A<br>RG= 4.7�<br>VGE= 15 V<br>Inductive Load||td(on)|−|19.2|−|ns| |Rise time|||tr|−|11.2|−|| |Turn−off delay time|||td(off)|−|89.6|−|| |Fall time|||tf|−|6.4|−|| |Turn−on switching loss|||Eon|−|311|−|�J| |Turn−off switching loss|||Eoff|−|141|−|| |Total switching loss|||Ets|−|452|−|| **www.onsemi.com** **2** ## **AFGHL50T65SQDC** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**Parameter**|**Test Conditions**|**Symbol**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |**SWITCHING CHARACTERISTICS**||||||| |Turn−on delay time|TJ= 175°C<br>VCC = 400 V,<br>IC = 12.5 A<br>RG= 4.7�<br>VGE= 15 V<br>Inductive Load|td(on)|−|16|−|ns| |Rise time||tr|−|8|−|| |Turn−off delay time||td(off)|−|107.2|−|| |Fall time||tf|−|53.6|−|| |Turn−on switching loss||Eon|−|157|−|�J| |Turn−off switching loss||Eoff|−|193|−|| |Total switching loss||Ets|−|350|−|| |Turn−on delay time|TJ= 175°C<br>VCC = 400 V,<br>IC = 25 A<br>RG= 4.7�<br>VGE= 15 V<br>Inductive Load|td(on)|−|17.6|−|ns| |Rise time||tr|−|14.4|−|| |Turn−off delay time||td(off)|−|99.2|−|| |Fall time||tf|−|9.6|−|| |Turn−on switching loss||Eon|−|350|−|�J| |Turn−off switching loss||Eoff|−|328|−|| |Total switching loss||Ets|−|678|−|| |**DIODE CHARACTERISTICS**||||||| |Forward voltage|IF= 20 A<br>IF= 20 A, TJ= 175°C|VF|−|1.45<br>1.83|1.75<br>−|V| |Total Capacitance|VR= 400 V, f = 1 MHz|C|−|103|−|pF| ||VR= 600 V, f = 1 MHz||−|99|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **AFGHL50T65SQDC** ## **TYPICAL CHARACTERISTICS** **==> picture [201 x 583] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>TJ = 25 ° C 20 V<br>15 V<br>12 V<br>150 10 V<br>VGE = 8 V<br>100<br>50<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>Figure 1. Typical Output Characteristics<br>(TJ = 25 � C)<br>100<br>Common Emitter<br>VCE = 20 V<br>80 TJ = 25 ° C<br>T J = 175 ° C<br>60<br>40<br>20<br>0<br>0 2 4 6 8 10<br>Collector Current, IC [A]<br>Figure 3. Transfer Characteristics<br>5<br>Common Emitter<br>V GE = 15 V<br>4<br>3<br>100 A<br>2 50 A<br>IC = 20 A<br>1<br>−100 −50 0 50 100 150 200<br>Collector−Emitter Case Temperature, TJ [ ° C]<br> [A]<br>C<br>Collector Current, I<br> [V]<br>GE<br>Gate−Emitter Voltage, V<br> [V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **==> picture [201 x 583] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>TJ = 175 ° C 20 V<br>15 V<br>12 V<br>150<br>10 V<br>100 VGE = 8 V<br>50<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>Figure 2. Typical Output Characteristics ¨<br>(TJ = 175J = 175 = 175 � C)<br>200<br>150<br>100<br>Common Emitter<br>50 V CE = 20 V<br>TJ = 25 ° C<br>TJ = 175 ° C<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>Figure 4. Typical Saturation Voltage<br>Characteristics<br>20<br>Common Emitter<br>16 TJ = 25 ° C<br>12<br>100 A<br>8<br>50 A<br>IC = 25 A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br> [A]<br>C<br>Collector Current, I<br> [A]<br>C<br>Collector Current, I<br> [V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 2. Typical Output Characteristics ¨ (TJ = 175J = 175 = 175** � **C)** **Figure 5. Saturation Voltage vs. Case Temperature** **Figure 6. Saturation Voltage vs. VGE (TJ = 25** � **C)** **at Variant Current Level** **www.onsemi.com** **4** **AFGHL50T65SQDC** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [203 x 581] intentionally omitted <==** **----- Start of picture text -----**<br> 20<br>Common Emitter<br>16 TJ = 175 ° C<br>12<br>100 A<br>8<br>50 A<br>IC = 25 A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br>Figure 7. Saturation Voltage vs. VGE (TJGE (TJ (TJJ = 175<br>15<br>VCC = 200 A<br>12<br>300 V<br>9 400 A<br>6<br>3<br>Common Emitter<br>TJ = 25 ° C<br>0<br>0 20 40 60 80 100<br>Gate Charge, QG [nC]<br>Figure 9. Gate Charge Characteristics (TJ J = 25<br>1000<br>td(on)<br>100<br>Common Emitter<br>t r V CC = 400 V, V GE = 15 V<br>IC = 50 A<br>T J = 25 ° C<br>TJ = 175 ° C<br>10<br>5 15 25 35 45 50<br>Gate Resistance, RG [ ��<br> [V]<br>CE<br>Collector−Emitter Voltage, V<br> [V]<br>GE<br>Gate−Emitter Voltage, V<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 7. Saturation Voltage vs. VGE (TJGE (TJ (TJJ = 175** � **C)** **Figure 9. Gate Charge Characteristics (TJ J = 25** � **C)** **==> picture [203 x 578] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Cies<br>1000<br>Coes<br>100<br>Cres<br>10 Common Emitter<br>VGE = 0 V, f = 1 MHz<br>TJ = 25 ° C<br>1<br>1 10 30<br>Collector−Emitter Voltage, VCE [V]<br>Figure 8. Capacitance Characteristics<br>200<br>100<br>tr<br>t d(on)<br>10<br>Common Emitter<br>V CC = 400 V, V GE = 15 V<br>IC = 50 A<br>TJ = 25 ° C<br>TJ = 175 ° C<br>1<br>5 15 25 35 45 50<br>Gate Resistance, RG [ ��<br>Figure 10. Turn−on Characteristics<br>vs. Gate Resistance<br>200<br>100<br>tr<br>td(on)<br>10<br>Common Emitter<br>V CC = 400 V, V GE = 15 V<br>RG = 4.7 �<br>TJ = 25 ° C<br>TJ = 175 ° C<br>1<br>0 30 60 90 120 150<br>Collector Current, IC [A]<br>Capacitance [pF]<br>Switching Time [ns]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 11. Turn−Off Characteristics vs. Resistance** **Figure 12. Turn−On Characteristics vs. Collector Current** **www.onsemi.com** **5** **AFGHL50T65SQDC** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [201 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>t r<br>100<br>td(on)<br>Common Emitter<br>10<br>VCC = 400 V, VGE = 15 V<br>RG = 4.7 �<br>T J = 25 ° C<br>TJ = 175 ° C<br>1<br>0 30 60 90 120 150<br>Collector Current, IC [A]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 13. Turn−Off Characteristics vs. Collector Current** **==> picture [201 x 370] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Eon<br>1000<br>Eoff<br>Common Emitter<br>100<br>VCC = 400 V, VGE = 15 V<br>RG = 4.7 �<br>T J = 25 ° C<br>TJ = 175 ° C<br>10<br>0 30 60 90 120 150<br>Collector Current, IC [A]<br>Figure 15. Switching Loss vs. Collector Current<br>150<br>100 TJ = 25 ° C<br>TJ = 75 ° C<br>T J = 125 ° C<br>TJ = 175 ° C<br>10<br>1<br>0 1 2 3 4 5<br>Forward Voltage, VF [V]<br>J]<br>�<br>Switching Loss [<br> [A]<br>F<br>Forward Current, I<br>**----- End of picture text -----**<br> **Figure 15. Switching Loss vs. Collector Current** **Figure 17. (Diode) Forward Characteristics vs. (Normal I−V)** **==> picture [206 x 577] intentionally omitted <==** **----- Start of picture text -----**<br> 5000<br>Eon<br>1000<br>Eoff<br>Common Emitter<br>VCC = 400 V, VGE = 15 V<br>IC = 50 A<br>T J = 25 ° C<br>TJ = 175 ° C<br>100<br>5 15 25 35 45 50<br>Gate Resistance, RG [ ��<br>Figure 14. Switching Loss vs. Gate<br>Resistance<br>300<br>100 DC 10 � s<br>100 � s<br>1 ms<br>10 ms<br>10<br>*Notes:<br>1 1. TC = 25 ° C<br>2. TJ = 175 ° C<br>3. Single Pulse<br>0.1<br>1 10 100 1000<br>Collector−Emitter Voltage, VCE [V]<br>Figure 16. SOA Characteristics (FBSOA)<br>50<br>40<br>30<br>20<br>10<br>0<br>25 50 75 100 125 150 175<br>Collector−Emitter Case Temperature, TC [ ° C]<br>J]<br>�<br>Switching Loss [<br> [A]<br>C<br>Collector Current, I<br> [A]<br>F<br>Diode Fowrad Current, I<br>**----- End of picture text -----**<br> **Figure 18. (Diode) Current Derating** **www.onsemi.com** **6** **AFGHL50T65SQDC** ## **TYPICAL CHARACTERISTICS** (continued) **==> picture [203 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>150<br>120<br>90<br>60<br>30<br>0<br>25 50 75 100 125 150 175<br>Collector−Emitter Case Temperature, TC [ ° C]<br> [W]<br>TOT<br>Diode Power Dissipation, P<br>**----- End of picture text -----**<br> **Figure 19. (Diode) Power Derating** **==> picture [206 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Common Emitter<br>VGE = 0 V, f = 1 MHz<br>T J = 25 ° C<br>1000<br>100<br>10<br>0,1 1 10 100 650<br>Collector−Emitter Voltage, VCE [V]<br>Output Capacitance [pF]<br>**----- End of picture text -----**<br> **Figure 20. (Diode) Output Capacitance (Coes) vs. Reverse Voltage** **==> picture [208 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 30<br>20<br>10<br>0<br>0 100 200 300 400 500 600 650<br>Collector−Emitter Voltage, VCE [V]<br>J]<br>�<br> [<br>OSS<br>Capacitance Energy, E<br>**----- End of picture text -----**<br> **Figure 21. Output Capacitance Stored Energy** **www.onsemi.com** **7** **AFGHL50T65SQDC** **==> picture [347 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> 5<br>1<br>0.5<br>0.2<br>0.1 0.1 PDM<br>0.05 t 1<br>0.02 t2<br>0.01 Duty Factor, D = t1 / t2<br>Single Pulse Peak TJ = Pdm × Zthjc + TC<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Figure 22. Transient Thermal Impedance of IGBT<br>5<br>1<br>0.5<br>0.2<br>0.1<br>0.05<br>0.1 0.02 PDM<br>0.01 t1<br>Single Pulse t 2<br>Duty Factor, D = t1 / t2<br>Peak TJ = Pdm × Zthjc + TC<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 23. Transient Thermal Impedance of Diode** **www.onsemi.com** **8** MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** ## **TO−247−3LD** CASE 340CX ISSUE O DATE 27 JUN 2018 **==> picture [481 x 193] intentionally omitted <==** **----- Start of picture text -----**<br> GENERIC |e | ~ | 556] ~ |<br>MARKING DIAGRAM* L a 19.75 | 20.00 | 20.25<br>L o t or [sr | 358 | 365 |<br>T 7 | a | 5.34 | 546 | 5.58 |<br>XXXXXXXXX<br>AYWWG XXXXXA = Specific Device Code= Assembly Location | ob | 1.17 | 1.26 | 1.35 |<br>—_—| Y = Year<br>WW = Work Week<br>G = Pb−Free Package<br>*This information is generic. Please refer to 13.08| ~ | ~ |<br>device data sheet for actual part marking.<br>Pb−Free indicator, “G” or microdot “ ”, may °<br>or may not be present. Some products may<br>not follow the Generic Marking.<br>| dp1_| 1281|6.60 | 6.80 ~ | 7.00 ~ | |<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON93302G Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.<br>**----- End of picture text -----**<br> **DESCRIPTION: TO−247−3LD** **PAGE 1 OF 1** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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