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AFGHL50T65SQ
IGBT, 80 A, 1.6 V, 268 mW, 650 V, TO-247, 3 Pins
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- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 268mW
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 1.75 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Field Stop Trench IGBT 50A, 650 AFGHL50T65SQ V Using the novel field stop 4th generation high speed IGBT technology. AFGHL50T65SQ which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. It is a stand−alone IGBT. **www.onsemi.com** ## **Features** - AEC−Q101 Qualified - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co−efficient for Easy Parallel Operating **50 A, 650 V VCESat = 1.6 V** - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 50 A - 100% of the Parts are Tested for ILM (Note 2) - Fast Switching - Tight Parameter Distribution - RoHS Compliant ## **Typical Applications** **==> picture [67 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> - Automotive HEV−EV Onboard Chargers - Automotive HEV−EV DC−DC Converters - Totem Pole Bridgeless PFC **==> picture [117 x 70] intentionally omitted <==** **----- Start of picture text -----**<br> G<br>L C er<br>E<br>TO−247−3L<br>CASE 340CX<br>**----- End of picture text -----**<br> - PTC ## **MAXIMUM RATINGS** |**Rating**||**Symbol**|**Value**|**Unit**||E||**TO−247−3L**| |---|---|---|---|---|---|---|---|---| |Collector−to−Emitter Voltage||VCES|650|V|||**CASE 340CX**|| |Gate−to−Emitter Voltage||VGES|±20|V||||| |Transient Gate−to−Emitter Voltage|||±30|||||| |Collector Current (Note 1)<br>@ TC= 25°C<br>@ TC= 100°C<br>Pulsed Collector Current (Note 2)<br>Pulsed Collector Current (Note 3)<br>Maximum Power Dissipation<br>@ TC= 25°C<br>@ TC= 100°C<br>Operating Junction<br>/ Storage Temperature Range<br>Maximum Lead Temp. for Soldering<br>Purposes, 1/8″from case for 5 seconds||IC<br>ILM<br>ICM<br>PD<br>TJ, TSTG<br>TL|80<br>50<br>200<br>200<br>268<br>134<br>−55 to<br>+175<br>300|A<br>A<br>A<br>W<br>°C<br>°C||**MARKING DIAGRAM**<br>&Z&3&K<br>AFGHL<br>50T65SQ<br>~~.~~<br>tata||| |Stresses exceeding those listed in the Maximum Ratings table may damage the<br>device. If any of these limits are exceeded, device functionality should not be<br>assumed, damage may occur and reliability may be affected.||||||&Z<br>&3<br>&K|= Assembly Plant Code<br>= 3−Digit Date Code<br>= 2−Digit Lot Traceability Code|= Assembly Plant Code<br>= 3−Digit Date Code<br>= 2−Digit Lot Traceability Code| |1. Value limit by bond wire||||||AFGHL50T65SQ = Specific Device Code||| |2. VCC= 400 V, VGE= 15 V, IC= 200 A, RG= 15||= 15<br>Inductive Load||||||| |3. Repetitive Rating: pulse width limited by max. Junction temperature|Repetitive Rating: pulse width limited by max. Junction temperature|Repetitive Rating: pulse width limited by max. Junction temperature||||||| |||||||**ORDERING INFORMATION**||| ||||||**Device**<br>**Package**<br>**Shipping**<br>AFGHL50T65SQ<br>TO−247−3L<br>30 Units / Rail<br>~~———~~|||| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 200 A, RG = 15 Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature Publication Order Number: **AFGHL50T65SQ/D** **1** © Semiconductor Components Industries, LLC, 2019 **January, 2020 − Rev. 1** **AFGHL50T65SQ** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.56|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unless otherwise noted)||||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V,<br>IC= 1 mA||BVCES|650|−|−|V| |Temperature Coefficient of<br>Breakdown Voltage|VGE= 0 V,<br>IC= 1 mA||�BVCES<br>�TJ|−|0.6|−|V/°C| |Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V,<br>VCE= 650 V||ICES|−|−|250|�A| |Gate leakage current, collector−<br>emitter short−circuited|VGE= 20 V,<br>VCE= 0 V||IGES|−|−|±400|nA| |**ON CHARACTERISTICS**|||||||| |Gate−emitter threshold voltage|VGE= VCE, IC= 50 mA||VGE(th)|3.4|4.9|6.4|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 50 A<br>VGE= 15 V, IC= 50 A, TJ= 175°C||VCE(sat)|−<br>−|1.6<br>1.95|2.1<br>−|V| |**DYNAMIC CHARACTERISTICS**|||||||| |Input capacitance|VCE= 30 V,<br>VGE= 0 V,<br>f = 1 MHz||Cies|−|3209|−|pF| |Output capacitance|||Coes|−|42|−|| |Reverse transfer capacitance|||Cres|−|12|−|| |Gate charge total|VCE= 400 V,<br>IC= 50 A,<br>VGE= 15 V||Qg|−|99|−|nC| |Gate−to−emitter charge|||Qge|−|17|−|| |Gate−to−collector charge|||Qgc|−|23|−|| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 25 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load,<br>FWD: AFGHL50T65SQD||td(on)|−|19|−|ns| |Rise time|||tr|−|11|−|| |Turn−off delay time|||td(off)|−|87|−|| |Fall time|||tf|−|5|−|| |Turn−on switching loss|||Eon|−|0.35|−|mJ| |Turn−off switching loss|||Eoff|−|0.12|−|| |Total switching loss|||Ets|−|0.47|−|| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 50 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load,<br>FWD: AFGHL50T65SQD||td(on)|−|20|−|ns| |Rise time|||tr|−|28|−|| |Turn−off delay time|||td(off)|−|81|−|| |Fall time|||tf|−|36|−|| |Turn−on switching loss|||Eon|−|0.95|−|mJ| |Turn−off switching loss|||Eoff|−|0.46|−|| |Total switching loss|||Ets|−|1.41|−|| **www.onsemi.com** **2** ## **AFGHL50T65SQ** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (Continued) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unless otherwise noted)|(Continued)||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||| |Turn−on delay time|TJ= 175°C,<br>VCC= 400 V,<br>IC= 25 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load,<br>FWD: AFGHL50T65SQD|td(on)|−|18|−|ns| |Rise time||tr|−|14|−|| |Turn−off delay time||td(off)|−|99|−|| |Fall time||tf|−|7|−|| |Turn−on switching loss||Eon|−|0.66|−|mJ| |Turn−off switching loss||Eoff|−|0.3|−|| |Total switching loss||Ets|−|0.96|−|| |Turn−on delay time|TJ= 175°C,<br>VCC= 400 V,<br>IC= 50 A,<br>RG= 4.7�,<br>VGE= 15 V,<br>Inductive Load,<br>FWD: AFGHL50T65SQD|td(on)|−|20|−|ns| |Rise time||tr|−|29|−|| |Turn−off delay time||td(off)|−|88|−|| |Fall time||tf|−|46|−|| |Turn−on switching loss||Eon|−|1.42|−|mJ| |Turn−off switching loss||Eoff|−|0.65|−|| |Total switching loss||Ets|−|2.07|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **AFGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>T C = 25°C 20V<br>15V<br>12V<br>150<br>10V<br>V GE = 8V<br>100<br>50<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br> [A]<br> C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 1. Typical Output Characteristics** **==> picture [236 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>T C = 175°C 20V<br>15V<br>150 12V<br>10V<br>V GE = 8V<br>100<br>50<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>[A]<br> C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 2. Typical Output Characteristics** **==> picture [240 x 379] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>Common Emitter T C = 25°C T C = 175°C<br>V GE = 15V<br>150<br>100<br>50<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage<br>20<br>Common Emitter<br>T C = 25°C<br>16<br>12<br>8<br>100A<br>50A<br>4<br>IC = 25A<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br> [A]<br> C<br>Collector Current, I<br>[V]<br>CE<br>Collector −Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Voltage vs. VGE** **==> picture [235 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>Common Emitter<br>V GE = 15V<br>100 A<br>2.0<br>50 A<br>IC = 25 A<br>1.0<br>−100 −50 0 50 100 150 200<br>Collector−Emitter Case Temperature, TC [ ° C]<br>Figure 4. Saturation Voltage vs. Case<br>Temperature<br>20<br>Common Emitter<br>T C = 175°C<br>16<br>12<br>100A<br>8<br>50A<br>IC = 25A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br>[V]<br>CE<br>Collector −Emitter Voltage, V<br>[V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **4** **AFGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [241 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>C ies<br>1000<br>C oes<br>100<br>C res<br>10 Common Emitter<br>V GE = 0V, f = 1Mhz<br>T C = 25°C<br>1<br>1 10 30<br>Collector−Emitter Voltage, VCE [V]<br>Capacitance [pF]<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Characteristics** **==> picture [237 x 171] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>Common Emitter V CC = 200V<br>T C = 25°C<br>12 300V<br>400V<br>9<br>6<br>3<br>0<br>0 20 40 60 80 100 120<br>Gate Charge, Q g [nC]<br> [V]<br>GE<br>Gate −Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 8. Gate Charge** **==> picture [230 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>tr<br>td (on)<br>Common Emitter<br>V CC = 400V, VGE = 15V<br>IC = 50A<br>T C = 25°C<br>T C = 175°C<br>10<br>0 10 20 30 40 50<br>Gate Resistance, R g [ � ]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 9. Turn−On Characteristics vs. Gate Resistance** **==> picture [234 x 168] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>Common Emitter<br>VCC = 400V, VGE = 15V,<br>RG = 4.7 �<br>100 TC = 25°C tr<br>TC = 175 ° C<br>td(on)<br>10<br>10 35 60 85 110 135<br>Collector Current, IC [A]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 11. Turn−On Characteristics vs. Collector Current** **==> picture [239 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>t d(off)<br>100<br>tf<br>Common Emitter<br>V CC = 400V, V GE = 15V,<br>IC = 50A<br>T C = 25°C<br>T C = 175°C<br>10<br>0 10 20 30 40 50<br>Gate Resistance, Rg [ � ]<br>Figure 10. Turn−Off Characteristics vs. Gate<br>Resistance<br>t f<br>100<br>td(off)<br>10<br>Common Emitter<br>VCC = 400V, V GE = 15V,<br>R G = 4.7 �<br>T C = 25°C<br>T C = 175°C<br>1<br>0 25 50 75 100 125 150<br>Collector Current, IC [A]<br>Switching Time [ns]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 12. Turn−Off Characteristics vs. Collector Current** **www.onsemi.com** **5** **AFGHL50T65SQ** ## **TYPICAL CHARACTERISTICS** **==> picture [483 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 10 10<br>Eon<br>E on<br>1 1 Eoff<br>Common Emitter Common Emitter<br>V CC = 400V, VGE = 15V, VCC = 400V, V GE = 15V,<br>E off I T C C = 50A = 25°C T R CG = 25 = 4.7 °C �<br>T C = 175°C T C = 175°C<br>0.1 0.1<br>0 10 20 30 40 50 0 25 50 75 100 125 150<br>Gate Resistance, R g [ � ] Collector Current, I C [A]<br>Figure 13. Switching Loss vs. Gate Resistance Figure 14. Switching Loss vs. Collector<br>Current<br>300<br>DC<br>100 10 � s<br>100 � s<br>1ms<br>10 10ms<br>1 *Notes:<br>1. T C = 25°C<br>2. T J = 175°C<br>3. Single Pulse<br>0.1<br>1 10 100 1000<br>Collector − Emitter Voltage, VCE [V]<br>Switching Loss [mJ] Switching Loss [mJ]<br>[A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 15. SOA Characteristics** **==> picture [479 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.5<br>0.2<br>0.1<br>0.1<br>0.05 P DM Notes:Duty Factor, D = t1/t2<br>0.02<br>Peak T J = P DM x Z � JC (t) + T C<br>0.01 t1<br>Single Pulse t2<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 16. transient Thermal Impedance of IGBT** **www.onsemi.com** **6** **AFGHL50T65SQ** **TO−247−3LD** CASE 340CX ISSUE O **==> picture [443 x 525] intentionally omitted <==** **www.onsemi.com** **7** **AFGHL50T65SQ** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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