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AFGHL40T65SQD
IGBT, 80 A, 1.6 V, 238 W, 650 V, TO-247, 3 Pins
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- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: Lead (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Power Dissipation: 238W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Saturation Voltage: 1.6V
| Delivery and price | |
|---|---|
| Units per pack | 1000 |
| Price | 2.22 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## Field Stop Trench IGBT 40 A, 650 AFGHL40T65SQD V Using the novel field stop 4th generation high speed IGBT technology. AFGHL40T65SQD which is AEC Q101 qualified offers the optimum performance for both hard and soft switching topology in automotive application. **www.onsemi.com** ## **Features** - AEC−Q101 Qualified - Maximum Junction Temperature: TJ = 175°C - Positive Temperature Co−efficient for Easy Parallel Operating **40 A, 650 V, VCESat = 1.6 V** - High Current Capability - Low Saturation Voltage: VCE(Sat) = 1.6 V (Typ.) @ IC = 40 A - 100% of the Parts are Tested for ILM (Note 2) - Fast Switching - Tight Parameter Distribution - RoHS Compliant ## **Typical Applications** **==> picture [67 x 81] intentionally omitted <==** **----- Start of picture text -----**<br> C<br>G<br>E<br>**----- End of picture text -----**<br> - Automotive HEV−EV Onboard Chargers - Automotive HEV−EV DC−DC Converters - Totem Pole Bridgeless PFC **==> picture [488 x 334] intentionally omitted <==** **----- Start of picture text -----**<br> |||||||||| |---|---|---|---|---|---|---|---|---| |PTC| |MAXIMUM RATINGS|G| |L|C|er| |Rating|Symbol|Value|Unit|E| |TO−247−3L| |Collector−to−Emitter Voltage|VCES|650|V|CASE 340CX| |Gate−to−Emitter Voltage|VGES|±|20|V| |Transient Gate−to−Emitter Voltage|±|30| |Collector Current (Note 1)|@ TC = 25|°|C|IC|80|A|MARKING DIAGRAM| |@ TC = 100|°|C|40| |Pulsed Collector Current (Note 2)|ILM|160|A| |Pulsed Collector Current (Note 3)|ICM|160|A| |&Z&3&K| |Diode Forward Current|@ TC <|25|°|C|IF|80|A|AFGHL| |(Note 1)|@ TC <|100|°|C|20|40T65SQD| |Pulsed Diode Maximum Forward Current|IFM(2)|160|A|.| |Maximum Power Dissipation @ TC = 25|°|C|PD|238|W| |@ TC = 100|°|C|119|tata| |Operating Junction / Storage Temperature Range|TJ, TSTG|−55 to+175|°|C|&Z|= Assembly Plant Code| |&3|= 3−Digit Date Code| |Maximum Lead Temp. for Soldering|TL|300|°|C|&K|= 2−Digit Lot Traceability Code| |Purposes, 1/8|″|from case for 5 seconds|AFGHL40T65SQD = Specific Device Code| |Stresses exceeding those listed in the Maximum Ratings table may damage the| |device. If any of these limits are exceeded, device functionality should not be| |assumed, damage may occur and reliability may be affected.|ORDERING INFORMATION| |Value limit by bond wire| |VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 CC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 = 400 V, VGE = 15 V, IC = 160 A, RG = 15 GE = 15 V, IC = 160 A, RG = 15 = 15 V, IC = 160 A, RG = 15 C = 160 A, RG = 15 = 160 A, RG = 15 G = 15 = 15|Inductive Load|Device|Package|Shipping| |Repetitive Rating: pulse width limited by max. Junction temperature| |AFGHL40T65SQD|TO−247−3L|30 Units / Rail| |———| **----- End of picture text -----**<br> - PTC ## **MAXIMUM RATINGS** Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. VCC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 CC = 400 V, VGE = 15 V, IC = 160 A, RG = 15 = 400 V, VGE = 15 V, IC = 160 A, RG = 15 GE = 15 V, IC = 160 A, RG = 15 = 15 V, IC = 160 A, RG = 15 C = 160 A, RG = 15 = 160 A, RG = 15 G = 15 = 15 Inductive Load 3. Repetitive Rating: pulse width limited by max. Junction temperature Publication Order Number: **AFGHL40T65SQD/D** **1** © Semiconductor Components Industries, LLC, 2019 **January, 2020 − Rev. 1** **AFGHL40T65SQD** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Rating**|**Symbol**|**Value**|**Unit**| |Thermal resistance junction−to−case, for IGBT|R�JC|0.63|°C/W| |Thermal resistance junction−to−case, for Diode|R�JC|1.71|°C/W| |Thermal resistance junction−to−ambient|R�JA|40|°C/W| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unless otherwise noted)||||||| |---|---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**||**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**|||||||| |Collector−emitter breakdown voltage,<br>gate−emitter short−circuited|VGE= 0 V,<br>IC= 1 mA||BVCES|650|−|−|V| |Temperature Coefficient of<br>Breakdown Voltage|VGE= 0 V,<br>IC= 1 mA||�BVCES<br>�TJ|−|0.6|−|V/°C| |Collector−emitter cut−off current,<br>gate−emitter short−circuited|VGE= 0 V,<br>VCE= 650 V||ICES|−|−|250|�A| |Gate leakage current, collector−<br>emitter short−circuited|VGE= 20 V,<br>VCE= 0 V||IGES|−|−|±400|nA| |**ON CHARACTERISTICS**|||||||| |Gate−emitter threshold voltage|VGE= VCE, IC= 40 mA||VGE(th)|3.4|4.9|6.4|V| |Collector−emitter saturation voltage|VGE= 15 V, IC= 40 A<br>VGE= 15 V, IC= 40 A, TJ= 175°C||VCE(sat)|−<br>−|1.6<br>1.95|2.1<br>−|V| |**DYNAMIC CHARACTERISTICS**|||||||| |Input capacitance|VCE= 30 V,<br>VGE= 0 V,<br>f = 1 MHz||Cies|−|2339|−|pF| |Output capacitance|||Coes|−|61|−|| |Reverse transfer capacitance|||Cres|−|8|−|| |Gate charge total|VCE= 400 V,<br>IC= 40 A,<br>VGE= 15 V||Qg|−|68|−|nC| |Gate−to−emitter charge|||Qge|−|13|−|| |Gate−to−collector charge|||Qgc|−|16|−|| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**|||||||| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 20 A,<br>RG= 6�,<br>VGE= 15 V,<br>Inductive Load||td(on)|−|15|−|ns| |Rise time|||tr|−|10|−|| |Turn−off delay time|||td(off)|−|70|−|| |Fall time|||tf|−|3|−|| |Turn−on switching loss|||Eon|−|0.25|−|mJ| |Turn−off switching loss|||Eoff|−|0.09|−|| |Total switching loss|||Ets|−|0.34|−|| |Turn−on delay time|TC= 25°C,<br>VCC= 400 V,<br>IC= 40 A,<br>RG= 6�,<br>VGE= 15 V,<br>Inductive Load||td(on)|−|17|−|ns| |Rise time|||tr|−|22|−|| |Turn−off delay time|||td(off)|−|67|−|| |Fall time|||tf|−|31|−|| |Turn−on switching loss|||Eon|−|0.75|−|mJ| |Turn−off switching loss|||Eoff|−|0.29|−|| |Total switching loss|||Ets|−|1.04|−|| **www.onsemi.com** **2** ## **AFGHL40T65SQD** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise noted) (Continued) |**ELECTRICAL CHARACTERISTIC**|**S **(TJ= 25°C unless otherwise noted) (|Continued)||||| |---|---|---|---|---|---|---| |**Parameter**|**Test Conditions**|**Symbol**|**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||| |Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 20 A,<br>RG= 6�,<br>VGE= 15 V,<br>Inductive Load|td(on)|−|14|−|ns| |Rise time||tr|−|12|−|| |Turn−off delay time||td(off)|−|81|−|| |Fall time||tf|−|7|−|| |Turn−on switching loss||Eon|−|0.46|−|mJ| |Turn−off switching loss||Eoff|−|0.22|−|| |Total switching loss||Ets|−|0.68|−|| |Turn−on delay time|TC= 175°C,<br>VCC= 400 V,<br>IC= 40 A,<br>RG= 6�,<br>VGE= 15 V,<br>Inductive Load|td(on)|−|16|−|ns| |Rise time||tr|−|25|−|| |Turn−off delay time||td(off)|−|75|−|| |Fall time||tf|−|38|−|| |Turn−on switching loss||Eon|−|1.06|−|mJ| |Turn−off switching loss||Eoff|−|0.47|−|| |Total switching loss||Ets|−|1.53|−|| |**DIODE CHARACTERISTICS**||||||| |Diode Forward Voltage|IF= 20 A, TC= 25°C|VFM|−|2.0|2.6|V| ||IF= 20 A, TC= 175°C||−|1.75|−|| |Reverse Recovery Energy|IF= 20 A, dlF/dt = 200 A/�s,<br>TC= 175°C|Erec|−|54|−|�J| |Diode Reverse Recovery Time|IF= 20 A, dlF/dt = 200 A/�s,<br>TC= 25°C|Trr|−|28|−|ns| ||IF= 20 A, dlF/dt = 200 A/�s,<br>TC= 175°C|Trr|−|209|−|| |Diode Reverse Recovery Charge|IF= 20 A, dlF/dt = 200 A/�s,<br>TC= 25°C|Qrr|−|38|−|nC| ||IF= 20 A, dlF/dt = 200 A/�s,<br>TC= 175°C|Qrr|−|605|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **AFGHL40T65SQD** ## **TYPICAL CHARACTERISTICS** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>T C = 25°C<br>20V<br>15V<br>160<br>12V<br>10V<br>120<br>V GE = 8V<br>80<br>40<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>[A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 1. Typical Output Characteristics** **==> picture [235 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>T C = 175°C 20V<br>15V<br>160<br>12V<br>10V<br>120<br>80 V GE = 8V<br>40<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>[A]<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br> **Figure 2. Typical Output Characteristics** **==> picture [239 x 380] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>Common Emitter T C = 25°C<br>V GE = 15V<br>160<br>T C = 175°C<br>120<br>80<br>40<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE [V]<br>Figure 3. Typical Saturation Voltage<br>20<br>Common Emitter<br>T C = 25°C<br>16<br>12<br>8<br>80A<br>40A<br>4<br>IC = 20A<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br> [A]<br>C<br>Collector Current, I<br>[V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Voltage vs. VGE** **==> picture [237 x 381] intentionally omitted <==** **----- Start of picture text -----**<br> 3.0<br>Common Emitter<br>V GE = 15V<br>80A<br>2.0<br>40A<br>IC = 20A<br>1.0<br>−100 −50 0 50 100 150 200<br>Collector−Emitter Case Temperature, TC [ ° C]<br>Figure 4. Saturation Voltage vs. Case<br>Temperature<br>20<br>Common Emitter<br>T C = 175°C<br>16<br>12<br>IC = 20A<br>8<br>40A<br>80A<br>4<br>0<br>4 8 12 16 20<br>Gate−Emitter Voltage, VGE [V]<br>[V]<br>CE<br>Collector−Emitter Voltage, V<br>[V]<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br> **Figure 6. Saturation Voltage vs. VGE** **www.onsemi.com** **4** **AFGHL40T65SQD** ## **TYPICAL CHARACTERISTICS** **==> picture [492 x 588] intentionally omitted <==** **----- Start of picture text -----**<br> 10000 15<br>Common Emitter<br>C ies T C = 25°C 300V<br>12 400V<br>1000 V CC = 200V<br>9<br>100 C oes<br>6<br>C res<br>10<br>3<br>Common Emitter<br>V GE = 0V, f = 1Mhz<br>T C = 25°C<br>1 0<br>1 10 30 0 25 50 75 100<br>Collector−Emitter Voltage, V CE [[V]] Gate Charge, Q g [nC]<br>Figure 7. Capacitance Characteristics Figure 8. Gate Charge<br>100 1000<br>tr<br>td(off)<br>100<br>tf<br>td (on) Common EmitterV CC = 400V, VGE = 15V Common Emitter V CC = 400V, V GE = 15V,<br>IC = 40A IC = 40A<br>T C = 25°C T C = 25°C<br>10 T C = 175°C 10 T C = 175°C<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Gate Resistance, R g [ � ] Gate Resistance, R g [ � ]<br>Figure 9. Turn−On Characteristics vs. Gate Figure 10. Turn−Off Characteristics vs. Gate<br>Resistance Resistance<br>200 1000<br>100<br>trr<br>100 td(off)<br>td(on)d(on)<br>10 tf<br>10<br>Common Emitter Common Emitter<br>V CC = 400V, V GE = 15V, VCC = 400V, V GE = 15V,<br>R G = 6 � R G = 6 �<br>TCC = 25°C°CC T C = 25°C<br>TCC = 175°C°CC T C = 175°C<br>1 1<br>0 30 60 90 120 0 30 60 90 120<br>Collector Current, ICC [A] Collector Current, I C [A]<br> [V]<br>GE<br>Capacitance [pF] Gate −Emitter Voltage, V<br>Switching Time [ns] Switching Time [ns]<br>Switching Time [ns] Switching Time [ns]<br>**----- End of picture text -----**<br> **==> picture [237 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 200<br>100<br>trr<br>td(on)d(on)<br>10<br>Common Emitter<br>V CC = 400V, V GE = 15V,<br>R G = 6 �<br>TCC = 25°C°CC<br>TCC = 175°C°CC<br>1<br>0 30 60 90 120<br>Collector Current, ICC [A]<br>Switching Time [ns]<br>**----- End of picture text -----**<br> **Figure 11. Turn−On Characteristics vs. Collector Current** **Figure 12. Turn−Off Characteristics vs. Collector Current** **www.onsemi.com** **5** **AFGHL40T65SQD** ## **TYPICAL CHARACTERISTICS** **==> picture [244 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> 2<br>E on<br>Common Emitter<br>V CC = 400V, V GE [= 15V,]<br>IC = 40A<br>E off T C = 25°C<br>T C = 175°C<br>0.2<br>0 10 20 30 40 50<br>Gate Resistance, R g [ � ]<br>Figure 13. Switching Loss vs. Gate Resistance<br>300<br>100 DC 10 � s<br>100 � s<br>1ms<br>10 10ms<br>1<br>*Notes:<br>1. T C = 25°C<br>2. T J = 175°C<br>3. Single Pulse<br>0.1<br>1 10 100 1000<br>Collector − Emitter Voltage, VCE [V]<br>Figure 15. SOA Characteristics<br>10<br>T C = 25°C<br>T C = 175°C<br>8<br>di/dt = 200A/uS<br>6<br>4 di/dt = 100A/uS<br>di/dt = 200A/uS<br>2<br>di/dt = 100A/uS<br>0<br>0 10 20 30 40<br>Forward Current, V F [V]<br>Switching Loss [mJ]<br> [A]<br>C<br>Collector Current, I<br>[A]<br>rr<br>Reverse Recovery Current, I<br>**----- End of picture text -----**<br> **==> picture [237 x 377] intentionally omitted <==** **----- Start of picture text -----**<br> 10<br>E on<br>1<br>Common Emitter<br>V CC = 400V, V GE [= 15V,]<br>IC = 40A<br>T C = 25°C<br>E off T C = 175°C<br>0.1<br>0 30 60 90 120<br>Collector Current, IC [A]<br>Figure 14. Switching Loss vs. Collector<br>Current<br>80<br>T C = 175°C<br>T C = 75°C<br>10<br>T C = 25°C<br>1<br>0 1 2 3 4 5<br>Forward Voltage, VF [V]<br>Switching Loss [mJ]<br> [A]<br> F<br>Forward Current, I<br>**----- End of picture text -----**<br> **Figure 16. Forward Characteristics** **==> picture [241 x 170] intentionally omitted <==** **----- Start of picture text -----**<br> 350<br>T C = 25°C<br>T C = 175°C<br>280<br>210<br>di/dt = 100A/uS<br>140<br>di/dt = 200A/uS<br>70<br>0<br>0 10 20 30 40<br>Forward Current, VF [V]<br> [ns]<br> rr<br>Reverse Recovery Time, t<br>**----- End of picture text -----**<br> **Figure 17. Reverse Recovery Current** **Figure 18. Reverse Recovery Time** **www.onsemi.com** **6** **AFGHL40T65SQD** ## **TYPICAL CHARACTERISTICS** **==> picture [238 x 169] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>T C = 25°C<br>T C = 175°C<br>800<br>600<br>400<br>di/dt = 100A/uS<br>di/dt = 200A/uS<br>200<br>0<br>0 10 20 30 40<br>Forward Current, VF [V]<br>[nC]<br> rr<br>Reverse Recovery Charge, Q<br>**----- End of picture text -----**<br> **Figure 19. Stored Charge** **==> picture [468 x 406] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>0.5<br>0.2<br>0.1<br>0. 21<br>Notes:<br>0.05 P DM Duty Factor, D = t 1 /t 2<br>0.02 Peak T J = P DM x Z � JC (t) + T C<br>0.01 t1<br>Single Pulse t2<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Figure 20. Transient Thermal Impedance of IGBT<br>2<br>1<br>0.5<br>0.2<br>0.1<br>0.1 0.05<br>Notes:<br>0.02 P DM Duty Factor, D = t 1 /t 2<br>0.01 Peak TJ = PDM x Z � JC (t) + TC<br>Single Pulse t1<br>t2<br>0.01<br>10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>Rectangular Pulse Duration [sec]<br>Thermal Response [Zthjc]<br>Thermal Response [Zthjc]<br>**----- End of picture text -----**<br> **Figure 21. Transient Thermal Impedance of Diode** **www.onsemi.com** **7** **AFGHL40T65SQD** ## **PACKAGE DIMENSIONS** **TO−247−3LD** CASE 340CX ISSUE O **==> picture [443 x 525] intentionally omitted <==** **www.onsemi.com** **8** **AFGHL40T65SQD** ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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