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AFGH4L60T120RW-STD
IGBT, 73 A, 1.66 V, 289 W, 1.2 kV, TO-247, 4 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 4Pins
- Product Range: -
- Power Dissipation: 289W
- Transistor Mounting: Through Hole
- Transistor Case Style: TO-247
- Operating Temperature Max: 175°C
- Continuous Collector Current: 73A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.66V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.63 € |
| Current stock | 200+ |
| Lead time | 25 days |
Datasheet
**DATA SHEET www.onsemi.com** ~~ee~~ ## IGBT – Power, Single N-Channel, Field Stop VII (FS7), SCR, TO247-4L 1200 V, 1.66 V, 60 A ## AFGH4L60T120RW-STD ## **Description** Using the novel field stop 7th generation IGBT technology in TO247 4−lead package, this device offers good performance with low on state voltage and low switching losses for both hard and soft switching topologies in automotive applications. ## **Features** - Extremely Efficient Trench with Field Stop Technology - Maximum Junction Temperature − TJ =175 C - Short Circuit Rated and Low Saturation Voltage - Fast Switching and Tightened Parameter Distribution - AEC−Q101 Qualified, PPAP Available Upon Request - This Device is Pb−Free, Halogen Free/BFR Free and is RoHS Compliant ## **Applications** - Automotive E−compressor / Automotive EV PTC Heater / OBC **==> picture [192 x 280] intentionally omitted <==** **----- Start of picture text -----**<br> BVCES VCE(sat) TYP IC MAX<br>1200 V 1.66 V 60 A<br>[E++<br>PIN CONNECTIONS<br>C<br>E1: Kelvin Emitter<br>E2: Power Emitter<br>G<br>E1 E2<br>C<br>E2<br>E1 G<br>TO−247−4LD<br>CASE 340CJ<br>**----- End of picture text -----**<br> ## **MARKING DIAGRAM** **MAXIMUM RATINGS** (TJ = 25C unless otherwise noted) |**MAXIMUM RATINGS**(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|**MAXIMUM RATINGS**(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)|(TJ = 25C unless otherwise noted)J = 25C unless otherwise noted)= 25C unless otherwise noted)C unless otherwise noted)C unless otherwise noted)||| |---|---|---|---|---| |**Parameter**||**Symbol**|**Value**|**Unit**| |Collector−to−Emitter Voltage<br>~~ee~~||VCE<br>|1200<br>~~=~~|V<br>~~=~~<br>~~po~~| |Gate−to−Emitter Voltage<br>~~ee~~||VGE<br> <br>~~po~~|20<br>~~=~~|| |Transient Gate−to−Emitter Voltage<br>~~ee ~~<br>~~po~~|||30<br> ~~=~~<br>~~po~~|| |Collector Current<br>~~po~~<br>~~a~~|TC= 25C (Note 1)<br>~~po~~|IC<br>~~po~~<br>~~ee~~|73<br>~~po~~|A<br>~~po~~<br>~~ee~~| ||TC= 100C<br>~~po~~<br>~~eee ee~~||60<br>~~po~~<br>~~ee~~|| |Power Dissipation<br>~~po~~<br>~~a~~<br>~~ee es~~|TC= 25C<br>~~po~~<br>~~eee ee~~|PD<br>~~po~~<br>~~ee~~<br>~~ee~~|289<br>~~po~~<br>~~ee~~|W<br>~~po~~<br>~~ee~~| ||TC= 100C<br>~~po~~<br>~~eee ee~~<br>~~es~~||134<br>~~po~~<br>~~ee~~|| |Pulsed Collector Current<br>~~a~~<br>~~ee es~~|TC= 25C (Note 2)<br>~~eee ee~~<br>~~es~~|ICM<br>~~ee~~<br>~~ee~~|180<br>~~ee~~|A<br>~~ee~~| |Short Circuit Withstand Time<br>VGE= 15 V, VCC= 800 V, TC= 150C<br>~~ee es~~<br>~~ee~~||TSC<br>~~ee~~<br>~~ee~~|6<br>~~ee~~|s<br>~~ee~~| |Operating Junction and Storage Temperature<br>Range||TJ, Tstg|−55 to<br>+175|C| |Lead Temperature for Soldering Purposes<br>~~ee~~||TL<br>~~ee~~|260<br>~~ee~~|| **==> picture [168 x 125] intentionally omitted <==** **----- Start of picture text -----**<br> $Y&Z&3&K<br>AFGH4L60<br>120RWSTD<br>_<br>$Y = onsemi Logo<br>&Z = Assembly Plant Code<br>&3 = 3−Digit Date Code<br>&K = 2−Digit Lot Traceability Code<br>AFGH4L60120RWSTD = Specific Device Code<br>**----- End of picture text -----**<br> ## **ORDERING INFORMATION** |**Device**|**Package**|**Shipping**| |---|---|---| |AFGH4L60T120RW−STD|TO−247−4L<br>(Pb−Free)|30 Units /<br>Tube| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Value limit by bond wire 2. Repetitive rating: Pulse width limited by max. junction temperature Publication Order Number: **AFGH4L60T120RW−STD/D** **1** Semiconductor Components Industries, LLC, 2024 **September, 2024 − Rev. 0** **AFGH4L60T120RW−STD** ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction−to−Case for IGBT|R�JC|0.26|C/W| |Thermal Resistance, Junction−to−Ambient|R�JA|40|| ## **ELECTRICAL CHARACTERISTICS** (TJ = 25C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25C u|nless otherwise specified)||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**OFF CHARACTERISTICS**||||||| |Collector−to−Emitter Breakdown<br>Voltage|BVCES|VGE= 0 V, IC= 1 mA|1200|−|−|V| |Collector−to−Emitter Cut−Off Current|ICES|VGE= 0 V, VCE= VCES|−|−|40|�A| |Gate−to−Emitter Leakage Current|IGES|VGE=20 V, VCE= 0 V|−|−|400|nA| |**ON CHARACTERISTICS**||||||| |Gate−to−Emitter Threshold Voltage|VGE(th)|VGE= VCE, IC= 60 mA|5.1|6|6.9|V| |Collector−to−Emitter Saturation<br>Voltage|VCE(sat)|VGE= 15 V, IC= 60 A, TJ= 25C|−|1.66|1.99|V| |||VGE= 15 V, IC= 60 A, TJ= 175C|−|2.14|−|| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|CIES|VCE= 30 V, VGE= 0 V, f = 1 MHz|−|5330|−|pF| |Output Capacitance|COES||−|114|−|| |Reverse Transfer Capacitance|CRES||−|23|−|| |Total Gate Charge|QG|VCE= 600 V, VGE= 15 V, IC= 60 A|−|174|−|nC| |Gate−to−Emitter Charge|QGE||−|52|−|| |Gate−to−Collector Charge|QGC||−|73.6|−|| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**(Note: Si Diode Applied)||||||| |Turn−On Delay Time|td(on)|VCE= 600 V, VGE= 15 V,<br>IC= 30 A, RG= 6�,<br>TJ= 25C|−|62|−|ns| |Rise Time|tr||−|26|−|| |Turn−Off Delay Time|td(off)||−|305|−|| |Fall Time|tf||−|207|−|| |Turn−On Switching Loss|Eon||−|1.48|−|mJ| |Turn−Off Switching Loss|Eoff||−|2.32|−|| |Total Switching Loss|Ets||−|3.8|−|| |Turn−On Delay Time|td(on)|VCE= 600 V, VGE= 15 V,<br>IC= 60 A, RG= 6�,<br>TJ= 25C|−|68|−|ns| |Rise Time|tr||−|9|−|| |Turn−Off Delay Time|td(off)||−|264|−|| |Fall Time|tf||−|203|−|| |Turn−On Switching Loss|Eon||−|3.03|−|mJ| |Turn−Off Switching Loss|Eoff||−|3.98|−|| |Total Switching Loss|Ets||−|7|−|| **www.onsemi.com** **2** **AFGH4L60T120RW−STD** **ELECTRICAL CHARACTERISTICS** (TJ = 25C unless otherwise specified) |**ELECTRICAL CHARACTERISTIC**|**S**(TJ= 25C u|nless otherwise specified)||||| |---|---|---|---|---|---|---| |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |**SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**(Note: Si Diode Applied)||||||| |Turn−On Delay Time|td(on)|VCE= 600 V, VGE= 15 V,<br>IC= 30 A, RG= 6�,<br>TJ= 175C|−|59|−|ns| |Rise Time|tr||−|34|−|| |Turn−Off Delay Time|td(off)||−|347|−|| |Fall Time|tf||−|349|−|| |Turn−On Switching Loss|Eon||−|2.68|−|mJ| |Turn−Off Switching Loss|Eoff||−|3.03|−|| |Total Switching Loss|Ets||−|5.7|−|| |Turn−On Delay Time|td(on)|VCE= 600 V, VGE= 15 V,<br>IC= 60 A, RG= 6�,<br>TJ= 175C|−|67|−|ns| |Rise Time|tr||−|52|−|| |Turn−Off Delay Time|td(off)||−|313|−|| |Fall Time|tf||−|355|−|| |Turn−On Switching Loss|Eon||−|5.61|−|mJ| |Turn−Off Switching Loss|Eoff||−|5.67|−|| |Total Switching Loss|Ets||−|11.28|−|| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. **www.onsemi.com** **3** **AFGH4L60T120RW−STD** ## **TYPICAL CHARACTERISTICS** **==> picture [236 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>VGE = 8 V TJ = −55C<br>160 V GE = 10 V<br>VGE = 12 V<br>140 V GE = 15 V<br>VGE = 20 V<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>VCE, Collector−to−Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 1. Typical Output Characteristics** **==> picture [237 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>VGE = 8 V<br>160 V GE = 10 V TJ = 25C<br>VGE = 12 V<br>140 V GE = 15 V<br>VGE = 20 V<br>120<br>100<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>VCE, Collector−to−Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 2. Typical Output Characteristics** **==> picture [237 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> 180<br>160 TJ = 175C<br>140 V GE = 8 V<br>VGE = 10 V<br>120 V GE = 12 V<br>VGE = 15 V<br>100 V GE = 20 V<br>80<br>60<br>40<br>20<br>0<br>0 1 2 3 4 5<br>VCE, Collector−to−Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 3. Typical Output Characteristics** **==> picture [238 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>Common Emitter<br>100 VCE = 20 V<br>TJ = 25C<br>80 TJ = 175C<br>60<br>40<br>20<br>0<br>0 2 4 6 8 10 12 14<br>VGE, Gate−to−Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 4. Transfer Characteristics** **==> picture [491 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 180 3.5<br>Common Emitter<br>160<br>3.0 V GE = 15 V<br>140<br>2.5<br>120<br>100 2.0<br>80<br>1.5<br>60<br>Common Emitter 1.0<br>40 V CE = 15 V IC = 30 A<br>20 TTJJ = 25 = 175CC 0.5 II C C = 60 A = 90 A<br>0 0.0<br>0 1 2 3 4 5 −100 −50 0 50 100 150 200<br>VCE, Collector−to−Emitter Voltage (V) TJ, Junction Temperature ( � C)<br>, Collector Current (A)<br>IC<br>, Collector−to−Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Voltage Characteristics** **Figure 6. Saturation Voltage vs. Junction Temperature** **www.onsemi.com** **4** **AFGH4L60T120RW−STD** ## **TYPICAL CHARACTERISTICS** **==> picture [240 x 158] intentionally omitted <==** **----- Start of picture text -----**<br> 10k<br>1k<br>100<br>10<br>Common Emitter CIES<br>VGE = 0 V, f = 1 MHz COES<br>TJ = 25C CRES<br>1<br>0.1 1 10 30<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **==> picture [141 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> VCE, Collector−to−Emitter Voltage (V)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Characteristics** **==> picture [238 x 173] intentionally omitted <==** **----- Start of picture text -----**<br> 14 Common Emitter<br>IC = 60 A<br>12<br>10<br>8<br>6<br>4<br>VCC = 200 V<br>2 VCC = 400 V<br>VCC = 600 V<br>0<br>0 20 40 60 80 100 120 140 160 180<br>Qg, Gate Charge (nC)<br>, Gate−to−Emitter Voltage (V)<br>GE<br>V<br>**----- End of picture text -----**<br> **Figure 8. Gate Charge Characteristics** **==> picture [491 x 404] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 10k<br>Common Emitter<br>VCE = 600 V, VGE = 15 V<br>IC = 60 A, TJ = 175C<br>1k<br>100<br>100<br>Common Emitter td(on) tr td(on)t r<br>V CE = 600 V, V GE = 15 V t d(off) td(off)<br>IC = 60 A, TJ = 25C tf tf<br>10 10<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Rg, Gate Resistance ( � ) Rg, Gate Resistance ( � )<br>Figure 9. Switching Time vs. Gate Resistance<br>Figure 10. Switching Time vs. Gate Resistance<br>10 100<br>10<br>Common Emitter Common Emitter<br>VICCE = 60 A, T = 600 V, VJ = 25GE = 15 VC EEOFFON V ICCE = 60 A, T = 600 V, V J = 175GE = 15 V C EEOFFON<br>1 1<br>0 10 20 30 40 50 0 10 20 30 40 50<br>Rg, Gate Resistance ( � ) Rg, Gate Resistance ( � )<br>Figure 11. Switching Loss vs. Gate Resistance Figure 12. Switching Loss vs. Gate Resistance<br>Switching Time (ns) Switching Time (ns)<br>Switching Loss (mJ) Switching Loss (mJ)<br>**----- End of picture text -----**<br> **www.onsemi.com** **5** **AFGH4L60T120RW−STD** ## **TYPICAL CHARACTERISTICS** **==> picture [490 x 196] intentionally omitted <==** **----- Start of picture text -----**<br> 1000 1000<br>100 100<br>10 10<br>Common Emitter td(on) Common Emitter td(on)<br>RVCEG = 6 = 600 V, V � , TJ = 25GE = 15 VC td(off) tt rf VRCEG = 6 = 600 V, V � , TJ = 175GE = 15 VC td(off) tt rf<br>1 1<br>0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180<br>IC, Collector Current (A) IC, Collector Current (A)<br>Figure 13. Switching Time vs. Collector Figure 14. Switching Time vs. Collector<br>Current Current<br>Switching Time (ns) Switching Time (ns)<br>**----- End of picture text -----**<br> **==> picture [491 x 401] intentionally omitted <==** **----- Start of picture text -----**<br> 100 100<br>10 10<br>1 1<br>Common Emitter Common Emitter<br>V RCEG = 6 = 600 V, V � , TJ = 25GE = 15 V C EE OFFON VR CEG = 6 = 600 V, V � , T J = 175 GE = 15 V C EE OFFON<br>0.1 0.1<br>0 20 40 60 80 100 120 140 160 180 0 20 40 60 80 100 120 140 160 180<br>IC, Collector Current (A) IC, Collector Current (A)<br>Figure 15. Switching Loss vs Collector Figure 16. Switching Loss vs Collector<br>Current Current<br>1<br>D = 0 is Single Pulse<br>0.1<br>0.01<br>D = 0.00<br>D = 0.01 Notes:<br>0.001 D = 0.02 D = 0.05 PDM t1 Z Duty Factor: D = t � JC(t) = 0.26C/W Max 1 / t2<br>D = 0.10D = 0.20 t2 TJM = PDM Z � JC + TC<br>D = 0.50<br>0.0001<br>10 [−6] 10 [−5] 10 [−4] 10 [−3] 10 [−2] 10 [−1] 10 [0] 10 [1]<br>t, Rectangular Pulse Duration (s)<br>Switching Loss (mJ) Switching Loss (mJ)<br>C/W)<br>�<br>, Transient Thermal Impedance (<br>jc<br>�<br>Z<br>**----- End of picture text -----**<br> **Figure 17. Transient Thermal Impedance of IGBT** **www.onsemi.com** **6** **AFGH4L60T120RW−STD** ## **PACKAGE DIMENSIONS** **TO−247−4LD** CASE 340CJ ISSUE A **==> picture [492 x 489] intentionally omitted <==** **www.onsemi.com** **7** **AFGH4L60T120RW−STD** **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales **www.onsemi.com** **8**
Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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