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AFGBP40T120SWD
IGBT, 80 A, 1.33 V, 681 W, 1.2 kV, BPAK, 7 Pins
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: ONSEMI
- Product type: Single IGBTs
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 7Pins
- Product Range: -
- Power Dissipation: 681W
- Transistor Mounting: Surface Mount
- Transistor Case Style: BPAK
- Operating Temperature Max: 175°C
- Continuous Collector Current: 80A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Saturation Voltage: 1.33V
| Delivery and price | |
|---|---|
| Units per pack | 250 |
| Price | 3.17 € |
| Current stock | 500+ |
| Lead time | 23 days |
Datasheet
**DATA SHEET www.onsemi.com** ## **-** IGBT – Power, Co PAK N-Channel, Field Stop VII (FS7), BPAK |**BVCES**<br>1200 V|**VCE(sat) TYP**<br>1.33 V|**IC MAX**<br>40 A| |---|---|---| ## 1200 V, 1.33 V, 40 A AFGBP40T120SWD ## **COPAK IGBT** C (TAB) AFGBP40T120SWD E1: Kelvin Emitter E2: Power Emitter **Description** G (1) Using the novel field stop 7[th] generation IGBT technology and the E1 (2) Gen7 Diode in top-side cooled package (BPAK). The design choice E2 (3−7) ensures direct thermal contact with the heatsink, resulting in an ~~8~~ improvement of the thermal performance. Overall, this device offers the optimum performance with low on state voltage, better thermal performance and minimal switching losses for both hard and soft C switching topologies in automotive applications. **Features** • Extremely Efficient Trench with Field Stop Technology 1 • BPAK, a New Top-side Cooled Package Designed to Meet High ~~°~~ Voltage and Improve Thermal Performance 7 • The Creepage Distance Exceeding 5.6 mm to Align with the **BPAK7** IEC60664-1 for Voltages Up to 800 V **CASE 763AA** • Maximum Junction Temperature TJ = 175 °C • AEC-Q101 Qualified, PPAP Available Upon Request **MARKING DIAGRAM** • This Device is Lead Pb-Free, Halogen Free and RoHS Compliant 2DID CODE **Applications** • OBC AGBP40 120SWD AYWWZZ AGBP40120SWD e ~~S~~ FRONTSIDE MARKING BACKSIDE MARKING AGBP40120SWD = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code **ORDERING INFORMATION Device Package Shipping**[†] AFGBP40T120SWD BPAK 800 / Tape & Reel ~~==~~ † For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Publication Order Number: **AFGBP40T120SWD/D** **1** © Semiconductor Components Industries, LLC, 2024 **July, 2025 − Rev. 0** ## **AFGBP40T120SWD** ## **MAXIMUM RATINGS** (TJ = 25 ° C unless otherwise noted) |**MAXIMUM RATINGS**(TJ= 25°C unless otherwise noted)||||| |---|---|---|---|---| |**Parameter**||**Symbol**|**Value**|**Unit**| |Collector-to-Emitter Voltage||VCE|1200|V| |Gate-to-Emitter Voltage||VGE|±20|V| |Transient Gate-to-Emitter Voltage|||±30|V| |Collector Current|TC= 25°C|IC|80|A| ||TC= 100°C||40|| |Power Dissipation|TC= 25°C|PD|681|W| ||TC= 100°C||340|| |Pulsed Collector Current|TC= 25°C, tp= 10�s (Note 1)|ICM|120|A| |Diode Forward Current|TC= 25°C|IF|80|A| ||TC= 100°C||40|| |Pulsed Diode Maximum Forward Current|TC= 25°C, tp= 10�s (Note 1)|IFM|120|A| |Operating Junction and Storage Temperature Range||TJ, TSTG|−55 to +175|°C| |Lead Temperature for Soldering Purposes||TL|260|°C| Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Single pulse, limited by junction temperature ## **THERMAL CHARACTERISTICS** |**THERMAL CHARACTERISTICS**|||| |---|---|---|---| |**Parameter**|**Symbol**|**Value**|**Unit**| |Thermal Resistance, Junction-to-Case for IGBT|RθJC|0.22|°C/W| |Thermal Resistance, Junction-to-Case for Diode||0.44|| |Thermal Resistance, Junction-to-Ambient|RθJA|40|| **www.onsemi.com** **2** ## **AFGBP40T120SWD** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise stated) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**OFF CHARACTERISTICS**||||||| |Collector-to-Emitter Breakdown Voltage|BVCES|VGE= 0 V, IC= 1 mA|1200|||V| |Collector-to-Emitter Breakdown Voltage<br>Temperature Coefficient|�BVCES/<br>�TJ|VGE= 0 V, IC= 9.99 mA||1234||mV/°C| |Zero Gate Voltage Collector Current|ICES|VGE= 0 V, VCE= 1200 V|||40|�A| |Gate-to-Emitter Leakage Current|IGES|VGE=±20 V, VCE= 0 V|||±400|nA| |**ON CHARACTERISTICS**||||||| |Gate Threshold Voltage|VGE(TH)|VGE= VCE, IC= 40 mA|4.45|5.73|6.53|V| |Collector-to-Emitter Saturation Voltage|VCE(SAT)|VGE= 15 V, IC= 40 A, TJ= 25°C|0.96|1.33|1.7|| |||VGE= 15 V, IC= 40 A, TJ= 175°C||1.57||| |**DYNAMIC CHARACTERISTICS**||||||| |Input Capacitance|CIES|VGE= 0 V, VCE= 30 V, f = 1 MHz||4687||pF| |Output Capacitance|COES|||141||| |Reverse Transfer Capacitance|CRES|||20.5||| |Total Gate Charge|QG|VGE= 15 V, VCE= 800 V, IC= 40 A||155||nC| |Gate-to-Emitter Charge|QGE|||37.9||| |Gate-to-Collector Charge|QGC|||58.9||| |**SWITCHING CHARACTERISTICS**||||||| |Turn-On Delay Time|td(ON)|VGE= 0/15 V, VCE= 800 V,<br>IC= 20 A, RG= 10�,<br>TJ= 25°C||46||ns| |Turn-Off Delay Time|td(OFF)|||352||| |Rise Time|tr|||26||| |Fall Time|tf|||152||| |Turn-On Switching Loss|EON|||2.60||mJ| |Turn-Off Switching Loss|EOFF|||2.07||| |Total Switching Loss|ETOT|||4.67||| |Turn-On Delay Time|td(ON)|VGE= 0/15 V, VCE= 800 V,<br>IC= 40 A, RG= 10�,<br>TJ= 25°C||48||ns| |Turn-Off Delay Time|td(OFF)|||258||| |Rise Time|tr|||60||| |Fall Time|tf|||138||| |Turn-On Switching Loss|EON|||5.34||mJ| |Turn-Off Switching Loss|EOFF|||3.00||| |Total Switching Loss|ETOT|||8.34||| |Turn-On Delay Time|td(ON)|VGE= 0/15 V, VCE= 800 V,<br>IC= 20 A, RG= 10�,<br>TJ= 175°C||40||ns| |Turn-Off Delay Time|td(OFF)|||408||| |Rise Time|tr|||26||| |Fall Time|tf|||250||| |Turn-On Switching Loss|EON|||2.80||mJ| |Turn-Off Switching Loss|EOFF|||2.95||| |Total Switching Loss|ETOT|||5.75||| **www.onsemi.com** **3** ## **AFGBP40T120SWD** **ELECTRICAL CHARACTERISTICS** (TJ = 25 ° C unless otherwise stated) (continued) |**Parameter**|**Symbol**|**Test Conditions**|**Min**|**Typ**|**Max**|**Unit**| |---|---|---|---|---|---|---| |**SWITCHING CHARACTERISTICS**||||||| |Turn-On Delay Time|td(ON)|VGE= 0/15 V, VCE= 800 V,<br>IC= 40 A, RG= 10�,<br>TJ= 175°C||44||ns| |Turn-Off Delay Time|td(OFF)|||274||| |Rise Time|tr|||52||| |Fall Time|tf|||218||| |Turn-On Switching Loss|EON|||5.61||mJ| |Turn-Off Switching Loss|EOFF|||3.82||| |Total Switching Loss|ETOT|||9.44||| |**DIODE CHARACTERISTICS**||||||| |Forward Voltage|VF|IF= 40 A, TJ= 25°C|1.00|1.40|1.80|V| |||IF= 40 A, TJ= 175°C||1.43||| |**DIODE SWITCHING CHARACTERISTICS, INDUCTIVE LOAD**||||||| |Reverse Recovery Time|tRR|VR= 800 V, IF= 20 A,<br>dIF/dt = 500 A/�s, TJ= 25°C||275||ns| |Reverse Recovery Charge|QRR|||3193||nC| |Reverse Recovery Energy|EREC|||1.4||mJ| |Peak Reverse Recovery Current|IRRM|||19.4||A| |Reverse Recovery Time|tRR|VR= 800 V, IF= 40 A,<br>dIF/dt = 500 A/�s, TJ= 25°C||330||ns| |Reverse Recovery Charge|QRR|||4971||nC| |Reverse Recovery Energy|EREC|||2.4||mJ| |Peak Reverse Recovery Current|IRRM|||25.0||A| |Reverse Recovery Time|tRR|VR= 800 V, IF= 20 A,<br>dIF/dt = 500 A/�s, TJ= 175°C||415||ns| |Reverse Recovery Charge|QRR|||6905||nC| |Reverse Recovery Energy|EREC|||3.6||mJ| |Peak Reverse Recovery Current|IRRM|||28.0||A| |Reverse Recovery Time|tRR|VR= 800 V, IF= 40 A,<br>dIF/dt = 500 A/�s, TJ= 175°C||555||ns| |Reverse Recovery Charge|QRR|||9401||nC| |Reverse Recovery Energy|EREC|||4.9||mJ| |Peak Reverse Recovery Current|IRRM|||31.6||A| Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. NOTE: For optimal lifetime and reliability, **onsemi** recommends operating conditions not exceeding 80% of the maximum ratings specified in this datasheet. **www.onsemi.com** **4** **AFGBP40T120SWD** ## **TYPICAL CHARACTERISTICS** **==> picture [474 x 587] intentionally omitted <==** **----- Start of picture text -----**<br> 120 TJ= � 55 � C 120 TJ=25 � C<br> VGE=10V VGE=10V<br>100 VGE=12V 100 VGE=12V<br> VGE=15V VGE=15V<br> VGE=20V VGE=20V<br>80 80<br>60 60<br>40 40<br>20 20<br>0 0<br>0 1 2 3 4 5 0 1 2 3 4 5<br>VCE, Collector to Emitter Voltage (V) VCE, Collector to Emitter Voltage (V)<br>Figure 1. Output Characteristics Figure 2. Output Characteristics<br>120 TJ=175 � C 120 Common Emitter<br> VGE=10V V CE=20V<br>100 VGE=12V 100<br> VGE=15V<br> VGE=20V<br>80 80<br>60 60<br>40 40<br>20 20<br> TJ=25 � C<br>0 0 TJ=175 � C<br>0 1 2 3 4 5 0 2 4 6 8 10 12 14<br>VCE, Collector to Emitter Voltage (V) VGE, Gate to Emitter Voltage (V)<br>Figure 3. Output Characteristics Figure 4. Transfer Characteristics<br>120 2.5<br>Common Emitter Common Emitter<br>V GE=15V V GE=15V<br>100<br>2<br>80<br>1.5<br>60<br>1<br>40<br>0.5<br>20 IC=20A<br> TJ=25 � C IC=40A<br>0 TJ=175 � C 0 IC=80A<br>0 1 2 3 4 5 � 100 � 50 0 50 100 150 200<br>VCE, Collector to Emitter Voltage (V) TJ, Collector − Emitter Junction Temperature ( � C)<br>, Collector Current (A) , Collector Current (A)<br>IC IC<br>, Collector Current (A) , Collector Current (A)<br>IC IC<br>, Collector Current (A)<br>IC<br>, Collector to Emitter Voltage (V)<br>CE<br>V<br>**----- End of picture text -----**<br> **Figure 5. Saturation Characteristics** **Figure 6. Saturation Voltage vs. Junction Temperature** **www.onsemi.com** **5** **AFGBP40T120SWD** ## **TYPICAL CHARACTERISTICS** **==> picture [230 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>1000<br>Common Emitter<br>100 V GE=0V<br>TJ=25 � C<br>f=1MHz<br>10<br> C IES<br> C OES<br>1 C RES<br>0.1 1 10 100 1000<br>VCE, Collector to Emitter Voltage (V)<br>C, Capacitance (pF)<br>**----- End of picture text -----**<br> **Figure 7. Capacitance Characteristics** **==> picture [231 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 15<br>14<br>Common Emitter<br>13<br>IC =40A<br>12<br>11<br>10<br>9<br>8<br>7<br>6<br>5<br>4<br>3 Vcc=400V<br>Vcc=600V<br>2 Vcc=800V<br>1<br>0<br>0 20 40 60 80 100 120 140 160<br>QG, Gate Charge (nC)<br>VGE, Gate to Emitter Voltage (V)<br>**----- End of picture text -----**<br> **Figure 8. Gate Charge Characteristics** **==> picture [231 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 1000<br>*Note:<br>T C=25 � C,<br>TJ ≤ 175 � C<br>Single Pulse<br>100<br>10<br>1 pulseDuration=10u<br> pulseDuration=100u<br> pulseDuration=1m<br> pulseDuration=10m<br>pulseDuration=DC<br>0.1<br>1 10 100 1000<br>VCE, Collector to Emitter Voltage (V)<br>, Collector Current (A)<br>IC<br>**----- End of picture text -----**<br> **Figure 9. Max SOA Characteristics** **==> picture [220 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Common Emitter td(on)<br>VVI CGECE = 40A= 15V= 800V trtd(off)tf<br>1000<br>100<br>10<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG Gate Resistance [ � ]<br>t, Time [ns]<br>**----- End of picture text -----**<br> **Figure 10. Switching Time vs. Gate Resistance** **==> picture [217 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Common Emitter td(on)<br>TV I V CJGE CE = 40A = 175 == 15V 800V ° C trtdtf (off)<br>1000<br>100<br>10<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG Gate Resistance [ � ]<br>t, Time [ns]<br>**----- End of picture text -----**<br> **Figure 11. Switching Time vs. Gate Resistance** **==> picture [224 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Common Emitter Eon<br>V GE = 15V Eoff<br>VCE= 800V<br>IC = 40A<br>T J = 25 ° C<br>10<br>1<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG Gate Resistance [ � ]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br> **Figure 12. Switching Loss vs. Gate Resistance** **www.onsemi.com** **6** **AFGBP40T120SWD** ## **TYPICAL CHARACTERISTICS** **==> picture [225 x 375] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Common Emitter<br>VGE= 15V<br>V CE = 800V<br>IC = 40A<br>TJ = 175 ° C<br>10<br>Eon<br>Eoff<br>1<br>0 5 10 15 20 25 30 35 40 45 50 55<br>RG Gate Resistance [ � ]<br>Figure 13. Switching Loss vs. Gate Resistance<br>10000<br>Common Emitter<br>VGE = 15V<br>VCE = 800V<br>1000 R TJG= = 10 175 � ° C<br>100<br>10 td(on)<br>tr<br>td(off)<br>tf<br>1<br>20 40 60 80 100 120<br>IC Collector Current [A]<br>Switching Loss [mJ]<br>t, Time [ns]<br>**----- End of picture text -----**<br> **Figure 15. Switching Time vs. Collector Current** **==> picture [222 x 165] intentionally omitted <==** **----- Start of picture text -----**<br> 10000<br>Common Emitter<br>VGE= 15V<br>V CE = 800V<br>1000 R TJ G = 25 = 10 ° � C<br>100<br>10 td(on)<br>tr<br>td(off)<br>tf<br>1<br>20 40 60 80 100 120<br>IC Collector Current [A]<br>t, Time [ns]<br>**----- End of picture text -----**<br> **Figure 14. Switching Time vs. Collector Current** **==> picture [224 x 164] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Common Emitter<br>VGE= 15V<br>VCE = 800V<br>R G = 10 �<br>TJ = 25 ° C<br>10<br>Eon<br>Eoff<br>1<br>20 40 60 80 100 120<br>IC Collector Current [A]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br> **Figure 16. Switching Loss vs. Collector Current** **==> picture [226 x 166] intentionally omitted <==** **----- Start of picture text -----**<br> 100<br>Common Emitter<br>V GE = 15V<br>VCE = 800V<br>R G = 10 �<br>TJ = 175 ° C<br>10<br>Eon<br>Eoff<br>1<br>20 40 60 80 100 120 140 160<br>IC Collector Current [A]<br>Switching Loss [mJ]<br>**----- End of picture text -----**<br> **Figure 17. Switching Loss vs. Collector Current** **==> picture [225 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 120<br>VGE=0V<br>100<br>80<br>60<br>40<br>20 TJ=175 � C<br> TJ=25 � C<br>0 TJ= � 55 � C<br>0 1 2 3 4 5 6<br>VF, Forward Voltage (V)<br>, Forward Current (A)<br>IF<br>**----- End of picture text -----**<br> **Figure 18. Diode Forward Characteristics** **www.onsemi.com** **7** **AFGBP40T120SWD** ## **TYPICAL CHARACTERISTICS** **==> picture [484 x 167] intentionally omitted <==** **----- Start of picture text -----**<br> 60 800<br>IVFR = 40A = 800V 700 V IF R = 40A = 800V<br>50<br>600<br>40<br>500<br>30 400<br>300<br>20<br>200<br>10 TJ = 25ºC TJ = 25ºC<br>TJ = 175ºC 100 TJ = 175ºC<br>0 0<br>400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500<br>diF/dt, Diode Current Slope [A/us] diF/dt, Diode Current Slope [A/us]<br>, Reverse Recovery Current [A] Reverse Recovery time [ns]<br>t rr<br>IRRM<br>**----- End of picture text -----**<br> **Figure 19. Diode Reverse Recovery Current** **Figure 20. Diode Reverse Recovery Time** **==> picture [391 x 402] intentionally omitted <==** **----- Start of picture text -----**<br> 13000<br>12000 VR = 800V<br>11000 I F = 40A<br>10000<br>9000<br>8000<br>7000<br>6000<br>5000<br>4000<br>3000<br>2000<br>TJ = 25ºC<br>1000 TJ = 175ºC<br>0<br>400 500 600 700 800 900 1000 1100 1200 1300 1400 1500<br>diF/dt, Diode Current Slope [A/us]<br>Figure 21. Diode Stored Charge Characteristics<br>1<br>D=0 is Single Pulse<br>0.1<br>0.01<br> D=0.00<br>Notes: D=0.01<br>0.001 PDM t1 t 2 ZTDut θ JMJCy= (t)=0.22 CPDMyclexZ, θ D=tJC ° C/W Max (t)+T 1 /t 2 C D=0.02 D=0.05 D=0.10<br> D=0.20<br> D=0.50<br>0.0001<br>1e � 06 1e � 05 1e � 04 1e � 03 1e � 02 1e � 01 1e+00 1e+01<br>t, Rectangular Pulse Duration (sec)<br>Reverse Recovery Charge [nC]<br>rr<br>Q<br>C/W) , Effective Transient Thermal Resistance ( �<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 22. Max Transient Thermal Impedance of IGBT** **www.onsemi.com** **8** **AFGBP40T120SWD** ## **TYPICAL CHARACTERISTICS** **==> picture [412 x 190] intentionally omitted <==** **----- Start of picture text -----**<br> 1<br>D=0 is Single Pulse<br>0.1<br>0.01<br>0.001 PDM t1 t 2 Notes: ZTDuty Cycle,D=t θ JMJC=P (t) DM =0.44 xZ θ JC ° C (1 / t W Max /t)+T2 C D=0.00 D=0.01 D=0.02 D=0.05 D=0.10<br> D=0.20<br> D=0.50<br>0.0001<br>1e � 06 1e � 05 1e � 04 1e � 03 1e � 02 1e � 01 1e+00 1e+01<br>t, Rectangular Pulse Duration (sec)<br>C/W), Effective Transient Thermal Resistance ( �<br>thJC<br>Z<br>**----- End of picture text -----**<br> **Figure 23. Max Transient Thermal Impedance of Diode** ## **REVISION HISTORY** |**Revision**|**Description of Changes**|**Date**| |---|---|---| |0|Initial public release|7/21/2025| This document has undergone updates prior to the inclusion of this revision history table. The changes tracked here only reflect updates made on the noted approval dates. **www.onsemi.com** **9** **AFGBP40T120SWD** ## **PACKAGE DIMENSIONS** **==> picture [134 x 29] intentionally omitted <==** **----- Start of picture text -----**<br> BPAK7 14.00x12.85x3.50, 1.27P<br>CASE 763AA<br>ISSUE A<br>**----- End of picture text -----**<br> **==> picture [66 x 40] intentionally omitted <==** **www.onsemi.com** **10** **AFGBP40T120SWD** **onsemi** , , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “ **onsemi** ” or its affiliates and/or subsidiaries in the United States and/or other countries. **onsemi** owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of **onsemi** ’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. **onsemi** reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and **onsemi** makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does **onsemi** assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using **onsemi** products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by **onsemi** . “Typical” parameters which may be provided in **onsemi** data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. **onsemi** does not convey any license under any of its intellectual property rights nor the rights of others. **onsemi** products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use **onsemi** products for any such unintended or unauthorized application, Buyer shall indemnify and hold **onsemi** and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that **onsemi** was negligent regarding the design or manufacture of the part. **onsemi** is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ## **ADDITIONAL INFORMATION** **TECHNICAL PUBLICATIONS** : **ONLINE SUPPORT** : www.onsemi.com/support **Technical Library:** www.onsemi.com/design/resources/technical−documentation **For additional information, please contact your local Sales Representative at onsemi Website:** www.onsemi.com www.onsemi.com/support/sales ◊ **www.onsemi.com** **11**
Updated at June 10, 2026
onsemi is a premier global supplier of intelligent power and sensing technologies, driving disruptive innovations across the automotive, industrial, and cloud infrastructure markets. Recognized for their commitment to sustainability and reliable supply chains, the company accelerates advancements in vehicle electrification, industrial automation, and 5G networks by solving the industry's most complex design challenges. At the core of their portfolio is an industry-leading selection of discrete semiconductors. This extensive range features thousands of high-performance bipolar transistors, single and dual MOSFETs, and a comprehensive array of diodes, including Zener, Schottky, and fast-recovery rectifiers. Engineered for superior thermal performance and energy efficiency, these foundational components are critical for demanding power conversion, switching, and signal conditioning applications. Beyond essential discretes, onsemi provides a robust suite of advanced power management and circuit protection solutions. Their lineup includes intelligent power modules, single IGBTs, and transient voltage suppression (TVS) diodes designed to safeguard sensitive circuitry. Complimented by integrated passive filters, AC/DC LED driver ICs, and specialized sub-2.4GHz RF transceivers, onsemi equips engineers with the scalable, high-quality technologies needed to build a cleaner, smarter, and more connected world.
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