AFGB40T65SQDN

IGBT, 80 A, 1.6 V, 238 W, 650 V, TO-263 (D2PAK), 3 Pins

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Manufacturer: ONSEMI
Product type: Single IGBTs
DC Collector Current:80A; Collector Emitter Saturation Voltage Vce(on):1.6V; Power Dissipation Pd:238W; Collector Emitter Voltage V(br)ceo:650V; Transistor Case Style:TO-263; No. of Pins:3P
MSL: MSL 1 - Unlimited
SVHC: Lead (25-Jun-2025)
No. of Pins: 3Pins
Product Range: -
Power Dissipation: 238W
Transistor Mounting: Surface Mount
Transistor Case Style: TO-263 (D2PAK)
Operating Temperature Max: 175°C
Continuous Collector Current: 80A
Collector Emitter Voltage Max: 650V
Collector Emitter Saturation Voltage: 1.6V

Delivery and price
Units per pack	500
Price	1.94 €
Current stock	500+
Lead time	30 days

Datasheet

Updated at April 13, 2026