AFGB40T65SQDN

## AFGB40T65SQDN 

## IGBT for Automotive Applications, 650 V, 40 A, D[2] PAK 

## **Features** 

- Maximum Junction Temperature: TJ = 175°C 

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- High Speed Switching Series 

- VCE(sat) = 1.6 V (Typ.) @ IC = 40 A 

- 100% of the Part are Dynamically Tested (Note 1) 

- AEC−Q101 Qualified 

- These Devices are Pb−Free and are RoHS Compliant 

## **Typical Applications** 

- Automotive On Board Charger 

- Automotive DC/DC Converter for HEV 

## **ABSOLUTE MAXIMUM RATINGS** 

|**BVCES**|**VCE(sat) TYP**||**IC MAX**|
|---|---|---|---|
|650 V|1.6 V||160 A|
|||||
|G|E<br>C<br>~~ie~~|||



(TJ = 25 ° C unless otherwise stated) C **Parameter Symbol Value Unit** Collector to Emitter Voltage VCES 650 V Gate-to-Emitter Voltage VGES ± 20 V G E ~~5~~ Transient Gate-to-Emitter Voltage VGES ± 30 V ¢ **D[2] PAK−3** Collector Current − TC = 25 ° C IC 80 A **CASE 418AJ** Collector Current − TC = 100 ° C 40 A **MARKING DIAGRAM** Pulsed Collector Current (Note 2) ICM 160 A Diode Forward Current − TC = 25 ° C IF 40 A Diode Forward Current − TC = 100 ° C 20 A $Y&Z&3&K Pulsed Diode Maximum Forward IFM 160 A AFGB Current (Note 2) 40T65SQDN Maximum Power Dissipation − PD 238 W TC = 25 ° C Maximum Power Dissipation − 119 W ~~**—**~~ TC = 100 ° C ~~——— : J~~ Operating Junction and Storage TJ, Tstg −55 to 175 ° C $Y = ON Semiconductor Logo ~~eo~~ Temperature &Z = Assembly Plant Code Stresses exceeding those listed in the Maximum Ratings table may damage the &3 = 3-Digit Data Code device. If any of these limits are exceeded, device functionality should not be &K = 2-Digit Lot Traceability Code assumed, damage may occur and reliability may be affected. AFGB40T65SQDN= Specific Device Code 

1. VCC = 400 V, VGE = 15 V, IC = 120A, RG = 100 Inductive Load. 

2. Repetitive rating: pulse width limited by max. Junction temperature. 

3. Surface−mounted on FR4 board using 1 in[2] pad size, 1 oz Cu pad. 

4. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 

**ORDERING INFORMATION** 

**Device Package Shipping**[†] AFGB40T65SQDN D[2] PAK 800 Units / Tape & Reel ~~Et~~ †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 

Publication Order Number: **AFGB40T65SQDN/D** 

**1** 

© Semiconductor Components Industries, LLC, 2018 **December, 2018 − Rev. 2** 

**AFGB40T65SQDN** 

## **THERMAL CHARACTERISTICS** 

|**THERMAL CHARACTERISTICS**||||
|---|---|---|---|
|**Parameter**|**Symbol**|**Max**|**Unit**|
|Thermal Resistance Junction-to-Case, for IGBT|R�JC|0.63|°C/W|
|Thermal Resistance Junction-to-Case, for Diode|R�JC|1.55||
|Thermal Resistance Junction-to-Ambient|R�JA|40||



## **ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise stated) 

|**ELECTRICAL CHARACTERISTI**|**CS**(TC= 25°C|unless otherwise stated)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**OFF CHARACTERISTICS**|||||||
|Collector to Emitter Breakdown<br>Voltage|BVCES|VGE= 0 V, IC= 1 mA|650|−|−|V|
|Temperature Coefficient of<br>Breakdown Voltage|�VCES/�TJ|IC= 1 mA, Reference to 25°C|−|0.6|−|V/°C|
|Collector Cut-Off Current|ICES|VCE= VCES, VGE= 0 V|−|−|250|�A|
|G−E Leakage Current|IGES|VGE= VGES, VCE= 0 V|−|−|±400|nA|
|**ON CHARACTERISTICS**|||||||
|Gate Threshold Voltage|VGE(th)|VGE= VCE, IC= 40 mA|2.6|4.5|6.4|V|
|Collector to Emitter Saturation<br>Voltage|VCE(sat)|IC= 40 A, VGE= 15 V, TC= 25°C|−|1.6|2.1|V|
|||IC= 40 A, VGE= 15 V, TC= 175°C|−|1.92|−|V|
|**DYNAMIC CHARACTERISTIC**|||||||
|Input Capacitance|Cies|VCE= 30 V,VGE= 0 V,f = 1 MHz|−|2495|−|pF|
|Output Capacitance|Coes||−|50|−||
|Reverse Transfer Capacitance|Cres||−|9|−||
|**SWITCHING CHARACTERISTIC**|||||||
|Turn-On Delay Time|td(on)|VCC= 400 V, IC = 40 A, RG= 6�,<br>VGE = 15 V, Inductive Load,<br>TC= 25°C|−|17.6|−|ns|
|Rise Time|tr||−|19.2|−|ns|
|Turn-Off Delay Time|td(off)||−|75.2|−|ns|
|Fall Time|tf||−|9.6|−|ns|
|Turn-On Switching Loss|Eon||−|0.858|−|mJ|
|Turn-Off Switching Loss|Eoff||−|0.229|−|mJ|
|Total Switching Loss|Ets||−|1.087|−|mJ|
|Turn-On Delay Time|td(on)|VCC= 400 V, IC = 40 A, RG= 6�,<br>VGE = 15 V, Inductive Load,<br>TC= 175°C|−|16|−|ns|
|Rise Time|tr||−|22.4|−|ns|
|Turn-Off Delay Time|td(off)||−|81.6|−|ns|
|Fall Time|tf||−|20.8|−|ns|
|Turn-On Switching Loss|Eon||−|1.14|−|mJ|
|Turn-Off Switching Loss|Eoff||−|0.484|−|mJ|
|Total Switching Loss|Ets||−|1.624|−|mJ|
|Total Gate Charge|Qg|VCE = 400 V, IC = 40 A, VGE = 15 V|−|76|−|nC|
|Gate to Emitter Charge|Qge||−|14|−|nC|
|Gate to Collector Charge|Qgc||−|17|−|nC|



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**2** 

## **AFGB40T65SQDN** 

**ELECTRICAL CHARACTERISTICS** (TC = 25 ° C unless otherwise stated) (continued) 

|**ELECTRICAL CHARACTERISTI**|**CS**(TC= 25°C|unless otherwise stated) (continued)|||||
|---|---|---|---|---|---|---|
|**Parameter**|**Symbol**|**Test Condition**|**Min**|**Typ**|**Max**|**Unit**|
|**ELECTRICAL CHARACTERISTIC OF THE DIODE**(TJ= 25°C unless otherwise stated)|||||||
|Diode Forward Voltage|VFM|IF= 20 A|−|1.5|2.1|V|
|Reverse Recovery Energy|Erec|IF= 20 A<br>dIF/dt = 200 A/�s, TC= 25°C|−|22.3|−|�J|
|Diode Reverse Recovery Time|trr||−|131|−|ns|
|Diode Reverse Recovery Charge|Qrr||−|348|−|nC|
|Reverse Recovery Energy|Erec|IF= 20 A<br>dIF/dt = 200A/�s, TC= 175°C|−|100|−|�J|
|Diode Reverse Recovery Time|trr||−|245|−|ns|
|Diode Reverse Recovery Charge|Qrr||−|961|−|nC|



Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 

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**3** 

**AFGB40T65SQDN** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [227 x 152] intentionally omitted <==**

**----- Start of picture text -----**<br>
180<br>TC = 25 ° C 20 V<br>15 V<br>12 V<br>10 V<br>120<br>VGE = 8 V<br>60<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE (V)<br> (A)<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br>


**Figure 1. Typical Output Characteristics (25** � **C)** 

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**----- Start of picture text -----**<br>
180 TC = 175 ° C 20 V<br>15 V<br>12 V<br>120 10 V<br>VGE = 8 V<br>60<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE (V)<br> (A)<br>C<br>Collector Current, I<br>**----- End of picture text -----**<br>


**Figure 2. Typical Output Characteristics (175** � **C)** 

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**----- Start of picture text -----**<br>
180<br>Common Emitter<br>VGE = 15 V<br>TC = 25 ° C<br>TC = 175 ° C<br>120<br>60<br>0<br>0 1 2 3 4 5<br>Collector−Emitter Voltage, VCE (V)<br>Figure 3. Typical Saturation Voltage<br>Characteristics<br>20<br>Common Emitter<br>16 TC = 25 ° C<br>IC = 20 A<br>12<br>40 A<br>8 80 A<br>4<br>0<br>0 4 8 12 16 20<br>Gate−Emitter Voltage, VGE (V)<br> (A)<br>C<br>Collector Current, I<br> (V)<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 5. Saturation Voltage vs VGE (25** � **C)** 

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2,8<br>2,6 Common Emitter<br>VGE = 15 V<br>2,4<br>2,2 80 A<br>2<br>1,8 40 A<br>1,6<br>1,4 IC = 20 A<br>1,2<br>1<br>−100 −50 0 50 100 150 200<br>Collector−Emitter Case Temperature, TC ( � C)<br>Figure 4. Saturation Voltage vs Case Temperature<br>at Variant Current Level<br>20<br>Common Emitter<br>16 TC = 175 ° C<br>12<br>IC = 20 A<br>8 40 A<br>80 A<br>4<br>0<br>0 4 8 12 16 20<br>Gate−Emitter Voltage, VGE (V)<br> (V)<br>CE<br>Collector−Emitter Voltage, V<br> (V)<br>CE<br>Collector−Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 6. Saturation Voltage vs VGE (175** � **C)** 

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**4** 

**AFGB40T65SQDN** 

## **TYPICAL CHARACTERISTICS** 

**==> picture [233 x 151] intentionally omitted <==**

**----- Start of picture text -----**<br>
10000<br>Cies<br>1000<br>100 Coes<br>Cres<br>10<br>Common Emitter<br>VGE = 0 V, f = 1 MHz<br>TC = 25 ° C<br>1<br>1 10 100<br>Collect to Emitter Voltage, VCE (V)<br>Capacitance (pF)<br>**----- End of picture text -----**<br>


**Figure 7. Capacitance Characteristics** 

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**----- Start of picture text -----**<br>
15<br>Common Emitter<br>TC = 25 ° C<br>300 V<br>12<br>Vcc = 200 V<br>400 V<br>9<br>6<br>3<br>0<br>0 25 50 75 100<br>Gate Charge, Gg (nC)<br> (V)<br>GE<br>Gate−Emitter Voltage, V<br>**----- End of picture text -----**<br>


**Figure 8. Gate Charge Characteristics** 

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**----- Start of picture text -----**<br>
100<br>tr<br>td(on)<br>Common Emitter<br>VCC = 400 V, VGE = 15 V,<br>IC = 40 A<br>TC = 25 ° C<br>TC = 175 ° C<br>10<br>0 10 20 30 40 50<br>Gate Resistance, RG ( � )<br>Figure 9. Turn−On Characteristics vs Gate<br>Resistance<br>100<br>tr<br>td(on)<br>10<br>Common Emitter<br>VGE = 15 V, RG = 6  �<br>TC = 25 ° C<br>TC = 175 ° C<br>1<br>0 25 50 75 100 125 150<br>Collector Current, IC (A)<br>Switching Time (ns)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


**Figure 11. Turn−On Characteristics vs Collector Current** 

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**----- Start of picture text -----**<br>
1000<br>td(off)<br>100<br>tf<br>10 Common Emitter<br>VCC = 400 V, VGE = 15 V,<br>IC = 40 A<br>TC = 25 ° C<br>TC = 175 ° C<br>1<br>0 10 20 30 40 50<br>Gate Resistance, RG ( � )<br>Figure 10. Turn−Off Characteristics vs Gate<br>Resistance<br>100 td(off)<br>tf<br>10<br>Common Emitter<br>VGE = 15 V, RG = 6  �<br>TC = 25 ° C<br>TC = 175 ° C<br>1<br>0 25 50 75 100 125 150<br>Collector Current, IC (A)<br>Switching Time (ns)<br>Switching Time (ns)<br>**----- End of picture text -----**<br>


**Figure 12. Turn−Off Characteristics vs Collector Current** 

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**5** 

**AFGB40T65SQDN** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
10000<br>Eon<br>1000<br>Eoff Common Emitter<br>VCC = 400 V, VGE = 15 V,<br>IC = 40 A<br>TC = 25 ° C<br>TC = 175 ° C<br>100<br>0 10 20 30 40 50<br>Gate Resistance, RG ( � )<br>J)<br>�<br>Switching Loss (<br>**----- End of picture text -----**<br>


**Figure 13. Switching Loss vs Gate Resistance** 

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**----- Start of picture text -----**<br>
10000<br>Eon<br>1000<br>Eoff<br>100<br>Common Emitter<br>VGE = 15 V, RG = 6  �<br>TC = 25 ° C<br>TC = 175 ° C<br>10<br>0 25 50 75 100 125 150<br>Collector Current, IC (A)<br>J)<br>�<br>Switching Loss (<br>**----- End of picture text -----**<br>


**Figure 14. Switching Loss vs Collector Current** 

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**----- Start of picture text -----**<br>
100<br>100<br>10  � s<br>DC 100  � s<br>10 1 ms<br>10 ms TJ = 75 ° C<br>10<br>1 TJ = 175 ° C<br>*Note: TJ = 25 ° C<br>0 1. T2. T3. Single PulseCJ = 175 = 25 °° CC TTTCCC = 25 = 75 = 175 °° CC ° C<br>0 1<br>1 10 100 1000 0 1 2 3 4<br>Collector − Emitter Voltage, VCE (V) Forward Voltage, VF (V)<br>Figure 15. SOA Characteristics Figure 16. Forward Characteristics<br>10 400<br>350<br>di/dt = 200 A/ � s<br>8<br>300<br>6 di/dt = 100 A/ � s 250 di/dt = 100 A/ � s<br>di/dt = 200 A/ � s 200 di/dt = 200 A/ � s<br>4<br>150<br>di/dt = 100 A/ � s 100<br>2 TTCC = 25 = 175 ° C ° C 50 TTCC = 25 = 175 ° C ° C<br>0 0<br>0 10 20 30 40 0 10 20 30 40<br>Forward Current, IF (A) Forward Current, IF (A)<br> (A)C  (A)F<br>Collector Current, I Forward Current, I<br> (A)<br>rr  (ns)<br>rr<br>Reverse Recovery Time, t<br>Reverse Recovery Current, I<br>**----- End of picture text -----**<br>


**Figure 17. Reverse Recovery Current** 

**Figure 18. Reverse Recovery Time** 

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**6** 

**AFGB40T65SQDN** 

## **TYPICAL CHARACTERISTICS** 

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**----- Start of picture text -----**<br>
1400<br>1200 '1<br>1000<br>800 ~---t.eet7 -T= ° - T r T<br>est NR--1 -f--- a-1 - di/dt = 200 A/ : i s --<br>600 7 di/dt = 100 A/ : s<br>400 ae i __—+—___ |<br>200 | TC = 25 ° C<br>---pe ee TC = 175 ° C<br>anaes ee<br>0<br>0 10 20 30 40<br>Forward Current, IF (A)<br> (nC)<br>rr<br>Stored Recovery Charge, Q<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
Figure 19. Stored Charge<br>**----- End of picture text -----**<br>


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**----- Start of picture text -----**<br>
1.00<br>0.5<br>0.2<br>0.10 eet<br>0.1<br>0.05<br>0.02<br>0.01<br>"| abety |~<br>Duty Factor, D = tit?<br>Single Pulse<br>Peak Tj =Pdm x Zthjc + Te<br>0.01<br>1E−05 0.0001 0.001 0.01 0.1 1 10<br>Rectangular Pulse Duration (s)<br>Figure 20. Transient Thermal Impedance of IGBT<br>1.00<br>0.5<br>0.2<br>0.1<br>0.10 0.05<br>0.02 Pom<br>0.01 t, |~<br><—— single pulse Duty Factor,+ tho]D = t1/t2<br>0.01 Peak T, = Pdm x 2thjc + T,<br>1E−05 0.0001 0.001 0.01 0.1 1<br>Rectangular Pulse Duration (s)<br>Thermal Response (Zthjc)<br>Thermal Response (Zthjc)<br>**----- End of picture text -----**<br>


**Figure 21. Transient Thermal Impedance of Diode** 

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**7** 

MECHANICAL CASE OUTLINE **PACKAGE DIMENSIONS** 

**==> picture [491 x 669] intentionally omitted <==**

**----- Start of picture text -----**<br>
D [2] PAK−3 (TO−263, 3−LEAD)<br>CASE 418AJ<br>ISSUE C<br>DATE 03 OCT 2018<br>°<br>SCALE 1:1 B SEATINGPLANE NOTES:<br>1. DIMENSIONING AND TOLERANCING PER ASME<br>E A A Y14.5M, 1994.<br>2. CONTROLLING DIMENSION: INCHES.<br>E2 c2 L1 3. CHAMFER OPTIONAL<br>NOTE 3 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD<br>A FLASH. MOLD FLASH SHALL NOT EXCEED 0.005<br>PER SIDE. THESE DIMENSIONS ARE MEASURED<br>L1 D1 AT THE OUTERMOST EXTREMES OF THE PLAS-TIC BODY AT DATUM H.<br>oe D 7 5. THERMAL PAD CONTOUR IS OPTIONAL WITHIN<br>H DIMENSIONS E, L1, D1 AND E1.<br>DETAIL C E1<br>INCHES MILLIMETERS<br>0.10 M B A M DIM MIN MAX MIN MAX<br>A 0.160 0.190 4.06 4.83<br>L2 A1 0.000 0.010 0.00 0.25<br>A b 0.020 0.039 0.51 0.99<br>e =e i c Vy} VIEW A−A c 0.012 0.029 0.30 0.74<br>c2 0.045 0.065 1.14 1.65<br>2X b SIDE VIEW D 0.330 0.380 8.38 9.65<br>TOP VIEW 0.10 M B A M GAUGE H D1E 0.2600.380 0.420−−−− 9.656.60 10.67−−−−<br>PLANE E1 0.245 −−−− 6.22 −−−−<br>L3 e 0.100 BSC 2.54 BSC<br>H 0.575 0.625 14.60 15.88<br>L 0.070 0.110 1.78 2.79<br>L1 −−−− 0.066 −−−− 1.68<br>L2 −−−− 0.070 −−−− 1.78<br>L A1 B SEATINGPLANE L3M −80.010 BSC ° 8 ° −80.25 BSC ° 8 °<br>M DETAIL C<br>GENERIC MARKING DIAGRAMS*<br>VIEW A−A<br>OPTIONAL CONSTRUCTIONS<br>RECOMMENDED<br>SOLDERING FOOTPRINT* XXXXXXXXXXX XXXXXXXXG XXXXXXXXGAYWW XXXXXX<br>0.436 AWLYWWG AYWW  AKA XXYMW<br>a<br>0.366<br>IC Standard Rectifier SSG<br>co GHW<br>0.653<br>XXXXXX = Specific Device Code<br>A = Assembly Location<br>WL = Wafer Lot<br>2X Y = Year<br>0.169 WW = Work Week<br>2X W = Week Code (SSG)<br>0.063 M = Month Code (SSG)<br>hr 0.100 G = Pb−Free Package<br>PITCH AKA = Polarity Indicator<br>DIMENSIONS: INCHES<br>*This information is generic. Please refer to<br>*For additional information on our Pb−Free strategy and soldering device data sheet for actual part marking.<br>details, please download the ON Semiconductor Soldering and Pb−Free indicator, “G” or microdot “ ”,<br>Mounting Techniques Reference Manual, SOLDERRM/D. may or may not be present. Some products<br>may not follow the Generic Marking.<br>Electronic versions are uncontrolled except when accessed directly from the Document Repository.<br>DOCUMENT NUMBER: 98AON56370E Printed  versions are uncontrolled  except when stamped  “CONTROLLED COPY” in red.<br>DESCRIPTION: D [2] PAK−3 (TO−263, 3−LEAD) PAGE 1 OF 1<br>————————<br>ON Semiconductor and          are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.<br>ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding<br>the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically<br>disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the<br>rights of others.<br>**----- End of picture text -----**<br>


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