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AC847BWQ-7
Bipolar (BJT) Single Transistor, NPN, 45 V, 100 mA, 200 mW, SOT-323, Surface Mount
⚠️ Reference pricing provided. In case of supply shortages, we will connect you with our trusted procurement partners to ensure your project's continuity.
- Manufacturer: DIODES INC.
- Product type:
- MSL: MSL 1 - Unlimited
- SVHC: No SVHC (25-Jun-2025)
- No. of Pins: 3Pins
- Product Range: -
- Qualification: AEC-Q101
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 300MHz
- Transistor Case Style: SOT-323
- DC Current Gain hFE Min: 200hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 100mA
- Collector Emitter Voltage Max: 45V
| Delivery and price | |
|---|---|
| Units per pack | 5000 |
| Price | 0.037 € |
| Current stock | 500+ |
| Lead time | 30 days |
Datasheet
**AC847BWQ_AC847CWQ NPN SMALL SIGNAL TRANSISTOR IN SOT323** ## **Description** AC847BWQ and AC847CWQ Bipolar Junction Transistors (BJT) are designed to meet the stringent requirements of Automotive Applications. ## **Mechanical Data** - Case: SOT323 - Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 - Moisture Sensitivity: Level 1 per J-STD-020 ## **Features** - Ideally Suited for Automatic Insertion - Complementary PNP Types: AC857BWQ – AC857CWQ - Terminals: Finish – Matte Tin Plated Leads, Solderable per MIL-STD-202, Method 208 - Weight: 0.006 grams (Approximate) - For Switching and AF Amplifier Applications - **Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)** - **Halogen and Antimony Free. "Green" Device (Note 3)** - **Qualified to AEC-Q101 Standards for High Reliability** - **PPAP Capable (Note 4)** **==> picture [360 x 114] intentionally omitted <==** **----- Start of picture text -----**<br> SOT323<br>C<br>B<br>E<br>Top View Device Symbol Top View<br>Pin-Out<br>**----- End of picture text -----**<br> ## **Ordering Information** (Notes 4 & 5) |**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)|**Ordering Informationg Information Information**(Notes 4 & 5)| |---|---|---|---|---| |||||| |**Part Number**|**Compliance**|**Marking**|**Reel Size(inches)**|**Quantity Per Reel**| |AC847BWQ-7|Automotive|2D6|7|3,000| |AC847BWQ-13|Automotive|2D6|13|10,000| |AC847CWQ-7|Automotive|2D3|7|3,000| - Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green" products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to http://www.diodes.com/product_compliance_definitions.html. 5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. ## **Marking Information** |||||||||SOT323|SOT323|SOT323|||||||||||| |---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---| ||||||||||||||||XXX = Product Type Marking Code||||||| ||||||||||||||||(Please see Ordering Information)||||||| |||||||||YM<br>XXX|||||||YM = Date Code Marking<br>Y or Y = Year (ex: E = 2017)||||||| ||||||||||||||||M or M = Month (ex: 9 = September)||M or M = Month (ex: 9 = September)||||| |Date CodeKey<br>**Year**<br>**2017**<br>**Code**<br>E<br>**Month**<br>**Jan**<br>**Feb**<br>**Code**<br>1<br>2<br>~~——~~<br>~~SSS ~~|||||**2018**<br>**2019**<br>F<br>G<br>**Mar**<br>**Apr**<br>3<br>4<br> ~~SS ~~|||||**May**<br>5<br> ~~SS ~~|||||**2020**<br>**2021**<br>**2022**<br>**2023**<br>H<br>I<br>J<br>K<br>**Jun**<br>**Jul**<br>**Aug**<br>**Sep**<br>**Oct**<br>6<br>7<br>8<br>9<br>O<br> ~~SS SS SS~~||||**Nov**<br>N||**2024**<br>L<br>**Dec**<br>D| |AC847BWQ_AC847CWQ<br>Document number: DS39632 Rev. 1 - 2|||||||||||1 of 6<br>**www.diodes.com**||||||||August 2017<br>© Diodes Incorporated||| August 2017 © Diodes Incorporated ## **AC847BWQ_AC847CWQ** ## **Absolute Maximum Ratings** (@TA = +25°C, unless otherwise specified.) |**Absolute Maximum Ratingsgss** (@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)pecified.)ecified.))||| |---|---|---|---| |**Characteristic**|**Symbol**|**Value**|**Unit**| |Collector-Base Voltage|VCBO|50|V| |Collector-Emitter Voltage|VCEO|45|V| |Emitter-Base Voltage|VEBO|6|V| |Continuous Collector Current|IC|100|mA| |Peak Collector Current|ICM|200|mA| |Peak Base Current|IBM|200|mA| ## **Thermal Characteristics** (@TA = +25°C, unless otherwise specified.) |**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Thermal Characteristics **(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||| |---|---|---|---|---| |**Characteristic**||**Symbol**|**Value**|**Unit**| |Power Dissipation|(Note 6)|PD|200|mW| |Thermal Resistance, Junction to Ambient|(Note 6)|RθJA|625|°C/W| |Operating and Storage Temperature Range||TJ, TSTG|-65 to +150|°C| ## **ESD Ratings** (Note 7) |**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)|**ESD Ratingsgss **(Note 7)| |---|---|---|---|---| |||||| |**Characteristic**|**Symbol**|**Value**|**Unit**|**JEDEC Class**| |Electrostatic Discharge - Human BodyModel|ESD HBM|4,000|V|3A| |Electrostatic Discharge - Machine Model|ESD MM|400|V|C| Notes: 6. For a device mounted on minimum recommended pad layout 1oz weight copper that is on a single-sided FR-4 PCB; device is measured under still air conditions whilst operating in a steady-state. 7. Refer to JEDEC specification JESD22-A114 and JESD22-A115. 2 of 6 **www.diodes.com** AC847BWQ_AC847CWQ Document number: DS39632 Rev. 1 - 2 August 2017 © Diodes Incorporated **AC847BWQ_AC847CWQ** **Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) |**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|**Electrical Characteristics** (@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)|(@TA = +25°C, unless otherwise specified.)A = +25°C, unless otherwise specified.)= +25°C, unless otherwise specified.)||||| |---|---|---|---|---|---|---|---|---| |**Characteristic**<br>~~ee~~|||**Symbol**<br>~~ee~~|**Min**<br>~~ee~~|**Typ**<br>~~ee~~|**Max**<br>~~ee~~|**Unit**<br>~~ee~~|**Test Condition**<br>~~ee~~| |Collector-Base Breakdown Voltage<br>~~ee~~|||BVCBO<br>~~ee~~<br>~~RII~~|50<br>~~ee~~<br>~~(Rn~~|—<br>~~ee~~<br>~~ID~~|—<br>~~ee~~<br>~~ID~~|V<br>~~ee~~<br>~~I~~|IC= 100µA<br>~~ee~~| |Collector-Emitter Breakdown Voltage (Note 8)<br>~~es~~|||BVCEO<br>~~es~~<br>~~RII~~<br>~~nn (RD~~|45<br>~~es~~<br>~~(Rn~~<br>~~(RD~~|—<br>~~es~~<br>~~ID~~<br>~~I~~|—<br>~~es~~<br>~~ID~~<br>~~RD~~|V<br>~~es~~<br>~~I~~<br>~~I~~|IC= 10mA<br>~~es~~| |Emitter-Base Breakdown Voltage<br>~~ns~~<br>~~ee~~|||BVEBO<br>~~RII~~<br>~~ns~~<br>~~nn (RD~~|6<br>~~(Rn~~<br>~~ns~~<br>~~(RD~~<br>~~ee~~|—<br>~~ID~~<br>~~ns~~<br>~~I~~<br>~~ee~~|—<br>~~ID ~~<br>~~ns~~<br>~~RD~~<br>~~ee~~|V<br> ~~I~~<br>~~ns~~<br>~~I~~<br>~~ee~~|IE = 100µA<br>~~ns~~| |DC Current Gain (Note 8)<br>~~ee~~|Current Gain Group<br>~~ee~~|B<br>~~ee~~<br>~~ee~~|hFE<br>~~nn (RD~~<br>~~ee~~<br>~~ee~~|200<br>~~(RD ~~<br>~~ee~~<br>~~ee~~|290<br> ~~I ~~<br>~~ee~~<br>~~ee~~|450<br> ~~RD ~~<br>~~ee~~<br>~~ee~~|—<br> ~~I~~<br>~~ee~~<br>~~ee~~<br>~~ee~~|VCE= 5.0V, IC= 2.0mA<br>~~ee~~<br>~~ee~~| |||C<br>~~ee~~<br>~~ee~~||420<br>~~ee~~<br>~~ee~~<br>~~ee~~|520<br>~~ee~~<br>~~ee~~<br>|800<br>~~ee~~<br>~~ee~~<br>~~ee~~||| |Collector Cutoff Current<br>~~ee~~<br>~~es~~|||ICBO<br>~~es~~<br>~~ee~~|—<br>~~ee~~<br>~~es~~<br>~~ee~~|—<br>~~ee~~<br>~~es~~<br><br>~~ee~~|20<br>~~ee~~<br>~~es~~<br>~~ee~~|nA<br>~~ee~~<br>~~es~~<br>~~ee~~|VCB= 30V<br>~~es~~<br>~~ee~~| |||||||5<br>~~es~~<br>~~ee~~<br>~~ee~~|µA<br>~~es~~<br>~~ee~~<br>~~eee~~|VCB= 30V, TA= +150°C<br>~~es~~<br>~~ee~~<br>~~eee~~| |Collector-Emitter Saturation Voltage (Note 8)<br>~~i~~|||VCE(SAT)<br>~~ee~~<br>~~i~~|—<br>~~ee ~~<br>~~i~~<br>~~e~~|90<br> <br>~~i~~<br>~~ee~~|250<br> ~~ee~~<br>~~i~~<br>~~ee~~|mV<br>~~ee~~<br>~~i~~<br>~~eee~~<br>~~ee~~|IC= 10mA, IB= 0.5mA<br>~~ee~~<br>~~i~~<br>~~eee~~| ||||||200<br>~~i~~<br>~~ee~~<br>~~ee~~|600<br>~~i~~<br>~~ee~~<br>~~ee~~||IC= 100mA, IB= 5.0mA<br>~~i~~<br>~~eee~~| |Base-Emitter Turn-On Voltage (Note 8)<br>~~e~~|||VBE(ON)<br>~~e~~~~**e**~~<br>~~ee~~|580<br>~~**e**~~<br>~~e~~|660<br>~~ee~~<br>~~**e**~~<br>~~ee~~|700<br>~~ee~~<br>~~**e**~~<br>~~ee~~|mV<br>~~eee~~<br>~~**e**~~<br>~~ee~~|IC = 2mA, VCE= 5V<br>~~eee~~<br>~~**e**~~| |||||—<br>~~**e**~~<br>~~e~~<br>~~ee~~|—<br>~~**e**~~<br>~~ee~~<br>~~ee~~|770<br>~~**e**~~<br>~~ee~~||IC = 10mA, VCE= 5V<br>~~**e**~~| |Base-Emitter Saturation Voltage (Note 8)<br>~~ee~~|||VBE(SAT)<br>~~ee~~<br>~~ee~~<br>~~I~~|—<br>~~e ~~<br>~~ee~~<br>~~ee~~|700<br> ~~ee ~~<br>~~ee~~<br>~~ee~~|—<br> ~~ee~~<br>~~ee~~<br>~~(OS~~|mV<br>~~ee~~<br>~~ee~~<br>~~OO~~|IC = 10mA, IB= 0.5mA<br>~~ee~~| ||||||900<br>~~ee~~<br>~~ee~~<br>~~(OS~~|||IC = 100mA, IB= 5mA<br>~~ee~~| |Output Capacitance<br>~~ns~~|||COBO<br>~~ee~~<br>~~ns~~<br>~~I~~|—<br>~~ee ~~<br>~~ns~~|3<br> ~~ee~~<br>~~ns~~<br>~~(OS~~|4.5<br>~~ns~~<br>~~(OS~~|pF<br>~~ns~~<br>~~OO~~|VCB= 10V, f = 1.0MHz<br>~~ns~~| |Transition Frequency<br>~~ee~~|||fT<br>~~I~~<br>~~ee~~|100<br>~~ee~~|300<br>~~(OS~~<br>~~ee~~|—<br>~~(OS ~~<br>~~ee~~|MHz<br> ~~OO~~<br>~~ee~~|VCE= 5V, IC= 10mA,<br>f = 100MHz<br>~~ee~~| |Noise Figure<br>~~ee~~|||NF<br>~~ee~~|—<br>~~ee~~|—<br>~~ee~~|10<br>~~ee~~|dB<br>~~ee~~|VCE= 5V, IC= 200µA<br>RS= 2kΩ, f = 1kHz<br>∆f = 200Hz<br>~~ee~~| 3 of 6 **www.diodes.com** AC847BWQ_AC847CWQ Document number: DS39632 Rev. 1 - 2 August 2017 © Diodes Incorporated **AC847BWQ_AC847CWQ** ## **Typical Electrical Characteristics** (@TA = +25°C, unless otherwise specified.) **==> picture [215 x 213] intentionally omitted <==** **----- Start of picture text -----**<br> 300<br>250<br>200<br>150<br>100<br>‘ \<br>50 \<br>0<br>0 25 50 75 100 125 150 175 200<br>TA, AMBIENT TEMPERATURE ( °C 癈 )<br>Figure 1 Power Dissipation vs. Ambient Temperature<br>, POWER DISSIPATION (mW)<br>D<br>P<br>**----- End of picture text -----**<br> **==> picture [241 x 413] intentionally omitted <==** **----- Start of picture text -----**<br> 1,000<br>VCE = 5V<br>EO Se St<br>es |<br>eal eill|<br>100<br>ee<br>a ee eee:<br>QO OO OO GG<br>a |<br>ee lll<br>10 py<br>-— et<br>1<br>1 10 100<br>IICC, COLLECTOR CURRENT (mA), COLLECTOR CURRENT (mA)<br>Figure 4 Typical Gain-Bandwidth Product Figure 3 Typical Gain-Bandwidth Product<br>vs. Collector Currentvs. Collector Current<br>10000<br>VCE=5V<br>ee anil T A =150°C<br>1000 Pe<br>rh<br>-—} VA NER HHH<br>100 SA TA=-50°C TA=2 7 5°C CN<br>po Ne<br>10 Pn Sh<br>a a<br>1 es<br>1 10 100 1000<br>IC COLLECTOR CURRENT (mA)<br>Figure 5 Typical DC Current Gain vs. Collector Current<br>(Band C Group Gain)<br>, GAIN-BANDWIDTH PRODUCT (MHz)<br>fT<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br> **==> picture [246 x 431] intentionally omitted <==** **----- Start of picture text -----**<br> 0.4<br>IC<br>IB [= 20]<br>R<br>E<br>T<br>I [T] M [V)] ( 0.3<br>G [E]<br>- [E]<br>O [R]<br>T O [LTA]<br>C V<br>0.2 T = 25°CA<br>O [LLE] T [ION]<br>C T = 150°CA<br>, T [)] A T [URA]<br>( [S] E AS 0.1 IBainyh<br>C<br>V ee<br>T = -50°CA<br>0<br>0.1 1 10 100 1,000<br>I , COLLECTOR CURRENT (mA)C<br>Figure 2 Typical Collector-Emitter Saturation Voltage<br>vs. Collector Current<br>10000<br>a VCE=5V === ———_——_— — — == == ————_—— —— ===<br>eee T A =150°C<br>1000<br>eTeeeeel TT<br>SSSee te<br>100 | | || \ a<br>TA=-50 ° C TA=25°C<br>SSG as) eos ste eei<br>10 eeCCE CHL<br>1 1 Pe 10 te 100 1000<br>IC COLLECTOR CURRENT (mA)<br>Figure 4 Typical DC Current Gain vs. Collector Current<br> (Band B Group Gain)<br>, COLLECTOR-EMITTER<br>CE(SAT) SATURATION VOLTAGE (V)<br>V<br>, DC CURRENT GAIN<br>FE<br>h<br>**----- End of picture text -----**<br> 4 of 6 **www.diodes.com** AC847BWQ_AC847CWQ Document number: DS39632 Rev. 1 - 2 August 2017 © Diodes Incorporated **AC847BWQ_AC847CWQ** ## **Package Outline Dimensions** Please see http://www.diodes.com/package-outlines.html for the latest version. ## **SOT323** **==> picture [291 x 243] intentionally omitted <==** **----- Start of picture text -----**<br> D<br>A2<br>c a<br>A1 e L<br>JOM,<br>b<br>E E1<br>| ae<br>F e1<br>**----- End of picture text -----**<br> **==> picture [94 x 143] intentionally omitted <==** **----- Start of picture text -----**<br> ||||| |---|---|---|---| |SOT323| |Dim|Min|Max|Typ| |A1|0.00|0.10|0.05| |A2|0.90|1.00|0.95| |b|0.25|0.40|0.30| |c|0.10|0.18|0.11| |D|1.80 2.20|2.15| |E|2.00|2.20|2.10| |E1|1.15|1.35|1.30| |e|0.650 BSC| |e1|1.20|1.40|1.30| |F|0.375|0.475|0.425| |L|0.25|0.40|0.30| |a|0°|8°|--| |All Dimensions in mm| **----- End of picture text -----**<br> ## **Suggested Pad Layout** Please see http://www.diodes.com/package-outlines.html for the latest version. **SOT323** **==> picture [6 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> X<br>**----- End of picture text -----**<br> **==> picture [124 x 116] intentionally omitted <==** **----- Start of picture text -----**<br> Y<br>Y1 G<br>C<br>| o n C<br>**----- End of picture text -----**<br> **==> picture [100 x 112] intentionally omitted <==** **----- Start of picture text -----**<br> ||| |---|---| |Value| |Dimensions| |(in mm)| |C|0.650| |G|1.300| |X|0.470| |Y|0.600| |Y1|2.500| |——+|—| **----- End of picture text -----**<br> 5 of 6 **www.diodes.com** AC847BWQ_AC847CWQ Document number: DS39632 Rev. 1 - 2 August 2017 © Diodes Incorporated **AC847BWQ_AC847CWQ** ## **IMPORTANT NOTICE** DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. ## **LIFE SUPPORT** Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: - A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2017, Diodes Incorporated **www.diodes.com** 6 of 6 **www.diodes.com** AC847BWQ_AC847CWQ Document number: DS39632 Rev. 1 - 2 August 2017 © Diodes Incorporated
Updated at June 6, 2026
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