![A2P75S12M3-F — IGBT Module, Six Pack [Full Bridge], 75 A, 1.95 V, 454.5 W, 150 °C, Module](/media/4/E/E/4AB1AA2D5495BEE4.webp)
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A2P75S12M3-F
IGBT Module, Six Pack [Full Bridge], 75 A, 1.95 V, 454.5 W, 150 °C, Module
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- Manufacturer: STMICROELECTRONICS
- Product type: IGBT Modules
- Transistor Polarity:N Channel; DC Collector Current:75A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:454.5W; Collector Emitter Voltage V(br)ceo:1.2kV; Transist
- SVHC: No SVHC (25-Jun-2025)
- Product Range: ACEPACK 2 M
- IGBT Technology: Trench Field Stop
- IGBT Termination: Press Fit
- Power Dissipation: 454.5W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- Transistor Polarity: N Channel
- DC Collector Current: 75A
- Power Dissipation Pd: 454.5W
- Transistor Case Style: Module
- Operating Temperature Max: 150°C
- Junction Temperature Tj Max: 150°C
- Continuous Collector Current: 75A
- Collector Emitter Voltage Max: 1.2kV
- Collector Emitter Voltage V(br)ceo: 1.2kV
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 50 |
| Price | 52.6 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
## **A2P75S12M3-F**
ACEPACK™ 2 - sixpack topology - 1200 V, 75 A trench gate field-stop IGBT M series, soft diode and NTC
Datasheet - preliminary data
## **Features**
- ACEPACK™ 2 power module DBC Cu Al2O3 Cu
- Sixpack topology
- 1200 V, 75 A IGBTs and diodes
- VCE(sat): 1.95 V @ IC = 75 A
- Soft and fast recovery diode
- Integrated NTC
## **Applications**
- Inverters
- Industrial
**==> picture [165 x 9] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 1: Internal electrical schematic<br>**----- End of picture text -----**<br>
- Motor drives
## **Description**
This power module is a sixpack topology in an ACEPACK™ 2 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz.
**Table 1: Device summary**
|**Order code**|**Marking**|**Package**|**Leads type**|
|---|---|---|---|
|A2P75S12M3-F|A2P75S12M3-F|ACEPACK™ 2|Press fit contactpins|
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
_www.st.com_
October 2017
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|**Contents**<br>**A2P75S12M3-F**|**Contents**<br>**A2P75S12M3-F**|
|---|---|
|**Contents**||
|**1**|**Electrical ratings ............................................................................. 3**|
||1.1<br>IGBT .................................................................................................. 3|
||1.2<br>Diode ................................................................................................. 4|
||1.3<br>NTC ................................................................................................... 5|
||1.4<br>Package ............................................................................................ 6|
|**2**|**Electrical characteristics curves .................................................... 7**|
|**3**|**Test circuits ..................................................................................... 9**|
|**4**|**Topology and pin description ...................................................... 10**|
|**5**|**Package information ..................................................................... 11**|
||5.1<br>ACEPACK™ 2 sixpack press fit pins package information ............. 12|
|**6**|**Revision history ............................................................................ 14**|
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**Electrical ratings**
## **1 Electrical ratings**
## **1.1 IGBT**
Limiting values at Tj = 25 °C, unless otherwise specified.
**Table 2: Absolute maximum ratings of the IGBT**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VCES|Collector-emitter voltage (VGE= 0)|1200|V|
|IC|Continuous collector current (Tc= 100 °C)|75|A|
|ICP_(1)_|Pulsed collector current|150|A|
|VGE|Gate-emitter voltage|±20|V|
|PTOT|Totalpower dissipation|454.5|W|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switchingconditions|-40 to 150|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
**Table 3: Electrical characteristics of the IGBT**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|1200|||V|
|VCE(sat)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 75 A||1.95|2.3|V|
|||VGE= 15 V, IC= 75 A,<br>TJ= 150 ˚C||2.3|||
|VGE(th)|Gate threshold<br>voltage|VCE= VGE, IC= 1 mA|5|6|7|V|
|ICES|Collector cut-off<br>current|VGE= 0 V,<br>VCE= 1200 V|||100|µA|
|IGES|Gate-emitter leakage<br>current|VCE= 0 V,<br>VGE= ± 20 V|||±500|nA|
|Cies|Input capacitance|VCE= 25 V,<br>f = 1 MHz,<br>VGE= 0 V||4700||pF|
|Coes|Output capacitance|||350||pF|
|Cres|Reverse transfer<br>capacitance|||190||pF|
|Qg|Total gate charge|VCC= 960 V,<br>IC= 75 A,<br>VGE= ±15 V||350||nC|
|td(on)|Turn-on delaytime|VCC= 600 V,<br>IC= 75 A,<br>RG= 10 Ω,<br>VGE= ±15 V,<br>di/dt = 1900 A/µs||198||ns|
|tr|Current rise time|||32||ns|
|Eon_(1)_|Turn-on switching<br>energy|||3.59||mJ|
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**Electrical ratings**
||**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|---|
||td(off)|Turn-off delaytime|VCC= 600 V,<br>IC= 75 A, RG= 10 Ω,<br>VGE= ±15 V,<br>dv/dt = 6000 V/µs;||250||ns|
||tf|Current fall time|||159||ns|
||Eoff_(2)_|Turn-off switching<br>energy|||5.13||mJ|
||td(on)|Turn-on delaytime|VCC= 600 V, IC= 75 A,<br>RG= 10 Ω, VGE= ±15 V,<br>di/dt = 1718 A/µs,<br>TJ= 150 °C||200||ns|
||tr|Current rise time|||35||ns|
||Eon|Turn-on switching<br>energy|||6.28||mJ|
||td(off)|Turn-off delaytime|VCC= 600 V, IC= 75 A,<br>RG= 10 Ω, VGE= ±15 V,<br>dv/dt = 4900 V/µs,<br>TJ= 150 °C||266||ns|
||tf|Current fall time|||251||ns|
||Eoff|Turn-off switching<br>energy|||7.7||mJ|
||tSC|Short-circuit<br>withstand time|VCC≤ 600 V, VGE≤ 15 V,<br>TJstart≤ 150 °C|10|||µs|
||RTHj-c|Thermal resistance<br>junction to case|Each IGBT||0.30|0.33|°C/W|
||RTHc-h|Thermal resistance<br>case to heatsink|Each IGBT,<br>λgrease= 1 W/(m·°C)||0.60||°C/W|
## **Notes:**
(1)Including the reverse recovery of the diode.
(2)Including the tail of the collector current.
## **1.2 Diode**
**Table 4: Absolute maximum ratings of the diode**
|**Symbol**|**Parameter**|**Value**|**Unit**|
|---|---|---|---|
|VRRM|Repetitivepeak reverse voltage|1200|V|
|IF|Continuous forward current at (TC= 100 °C)|75|A|
|IFP_(1)_|Pulsed forward current|150|A|
|TJMAX|Maximumjunction temperature|175|°C|
|TJop|Operative temperature range under switching conditions|-40 to 150|°C|
## **Notes:**
(1)Pulse width limited by maximum junction temperature.
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**Electrical ratings**
**Table 5: Electrical characteristics of the diode**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|VF|Forward voltage|IF= 75 A|-|2.95|4.1|V|
|||IF= 75 A, TJ= 150 ˚C|-|2.3|||
|trr|Reverse recoverytime|IF= 75 A, VR= 600 V,<br>VGE= ±15 V,<br>di/dt = 1900 A/μs|-|200||ns|
|Qrr|Reverse recoverycharge||-|6.0||µC|
|Irrm|Reverse recoverycurrent||-|78||A|
|Erec|Reverse recoveryenergy||-|2.2||mJ|
|trr|Reverse recoverytime|IF= 75 A, VR= 600 V,<br>VGE= ±15 V,<br>di/dt = 1718 A/μs,<br>TJ= 150 °C|-|500||ns|
|Qrr|Reverse recoverycharge||-|12.5||µC|
|Irrm|Reverse recoverycurrent||-|90||A|
|Erec|Reverse recoveryenergy||-|5.2||mJ|
|RTHj-c|Thermal resistance<br>junction to case|Each diode|-|0.55|0.60|°C/W|
|RTHc-h|Thermal resistance case<br>to heatsink|Each diode,<br>λgrease= 1 W/(m·°C)|-|0.75||°C/W|
## **1.3 NTC**
**Table 6: NTC temperature sensor, considered as stand-alone**
|**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|---|
|R25|Resistance|T = 25°C||5||kΩ|
|R100|Resistance|T = 100°C||493||Ω|
|ΔR/R|Deviation of R100||-5||+5|%|
|B25/50|B-constant|||3375||K|
|B25/80|B-constant|||3411||K|
|T|Operating temperature<br>range||-40||150|°C|
**Figure 2: NTC resistance vs temperature**
**==> picture [176 x 163] intentionally omitted <==**
**Figure 3: NTC resistance vs temperature, zoom**
**==> picture [183 x 166] intentionally omitted <==**
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**Electrical ratings**
## **1.4 Package**
**Table 7: ACEPACK™ 2 package**
|**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**|
|---|---|---|---|---|---|
|Visol|Isolation voltage (AC voltage, t = 60 s)|||2500|V|
|Md|Screw mountingtorque|40||80|Nm|
|Tstg|Storage temperature|-40||125|°C|
|CTI|Comparative trackingindex|200||||
|Ls|Strayinductance module P1 - EW loop||33.5||nH|
|Rs|Module lead resistance, terminal to chip||3.6||mΩ|
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**Electrical characteristics** curves
## **2 Electrical characteristics curves**
**Figure 4: IGBT output characteristics (VGE = 15 V) Figure 5: IGBT output characteristics (TJ = 150 °C)**
**==> picture [165 x 151] intentionally omitted <==**
**==> picture [165 x 151] intentionally omitted <==**
**Figure 6: IGBT transfer characteristics (VCE = 15 V)**
**==> picture [165 x 151] intentionally omitted <==**
**Figure 7: Switching energy vs. gate resistance**
**==> picture [167 x 152] intentionally omitted <==**
**==> picture [457 x 187] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 9: IGBT reverse biased safe operating area<br>Figure 8: Switching energy vs. collector current<br>(RBSOA)<br>**----- End of picture text -----**<br>
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**Electrical characteristics** curves
**==> picture [443 x 201] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 11: Diode reverse recovery energy vs. diode<br>Figure 10: Diode forward characteristics<br>current slope<br>**----- End of picture text -----**<br>
**==> picture [451 x 201] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 12: Diode reverse recovery energy vs. Figure 13: Diode reverse recovery energy vs. gate<br>forward current resistance<br>**----- End of picture text -----**<br>
**Figure 14: Inverter diode thermal impedance**
**==> picture [193 x 164] intentionally omitted <==**
**Figure 15: IGBT thermal impedance**
**==> picture [193 x 164] intentionally omitted <==**
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**Test circuits**
## **3 Test circuits**
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**----- Start of picture text -----**<br>
Figure 16: Test circuit for inductive load Figure 17: Gate charge test circuit<br>switching<br>A A<br>C<br>G L=100 µH<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>G D.U.T<br>+ RG E<br>-<br>AM01504v1<br>**----- End of picture text -----**<br>
**Figure 18: Switching waveform**
**Figure 19: Diode reverse recovery waveform**
**==> picture [144 x 70] intentionally omitted <==**
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**Topology and** pin description
## **4 Topology and pin description**
**Figure 20: Electrical topology and pin description**
**==> picture [408 x 290] intentionally omitted <==**
**Figure 21: Package top view with sixpack pinout**
**==> picture [406 x 225] intentionally omitted <==**
**----- Start of picture text -----**<br>
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**Package information**
## **5 Package information**
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: _**www.st.com**_ . ECOPACK[®] is an ST trademark.
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## **Package information**
## **5.1 ACEPACK™ 2 sixpack press fit pins package information**
**Figure 22: ACEPACK™ 2 sixpack press fit pins package outline (dimensions are in mm)**
**==> picture [351 x 496] intentionally omitted <==**
**----- Start of picture text -----**<br>
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- The lead size includes the thickness of the lead plating material.
- Dimensions do not include mold protrusion. Package dimensions do not include any eventual metal burrs.
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**Package information**
**==> picture [366 x 507] intentionally omitted <==**
**----- Start of picture text -----**<br>
Figure 23: ACEPACK™ 2 sixpack press fit pins recommended PCB holes layout<br>(dimensions are in mm)<br>Scale 10 : 1 A<br>_ ~ th. 25pm min<br>\/ — va<br>Finished hole<br>Drilled hole Zz<br>Detail AY =<br>\ Section A-A<br>VIIAAWYULLLLLL LLL LLL _|<br>26.50<br>21.25<br>16.00<br>ram<br>12.80<br>9.60<br>/ o-9e> EWEW EW — | G5 o-O+ 9 WW — _/ wniws/ 6.40<br>1 is E'WEV G6 od W l/\. 3.20<br>\ .\ fco E'VEUEVEV G4 P P P P G3 o-- VVV a/ { | 0.00 3.20<br>(te St EU U IE<br>EU U 6.40<br>es Ne E'U G2 T1 T2 G1 U 9.60<br>|pO /at\ o—\\— 12.80<br>|1 ALLY \\\\\ 16.00<br>\N\ 21.25<br>26.50<br>A“ A/ a “ Y/ \oo“~——— i<—o~~<br>8569722_HolesLayout_pressfit_acepack2<br>R4.50<br>R1.40<br>25.50 24.00 20.80 4.80 1.60 0.00 1.60 4.80 8.00 20.80 24.00 25.50<br>**----- End of picture text -----**<br>
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**Revision history**
## **6 Revision history**
**Table 8: Document revision history**
|**Date**|**Revision**|**Changes**|
|---|---|---|
|19-May-2016|1|Initial release.|
|24-May-2016|2|Updated_Table 5: "Electrical characteristics of the diode"_.|
|24-Oct-2017|3|Updated_Section 1: "Electrical ratings"_,_Section 2: "Electrical_<br>_characteristics curves"_and_Section 5: "Package information"_.<br>Minor text changes.|
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## **IMPORTANT NOTICE – PLEASE READ CAREFULLY**
STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement.
Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products.
No license, express or implied, to any intellectual property right is granted by ST herein.
Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product.
ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners.
Information in this document supersedes and replaces information previously supplied in any prior versions of this document.
- © 2017 STMicroelectronics – All rights reserved
DocID029358 Rev 3
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Updated at April 16, 2026
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