A1P50S65M2

IGBT Module, Six Pack [Full Bridge], 50 A, 1.95 V, 208 W, 175 °C, Module

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Manufacturer: STMICROELECTRONICS
Product type: IGBT Modules
Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:650V; Transisto
SVHC: No SVHC (21-Jan-2025)
Product Range: ACEPACK 1
IGBT Technology: Trench Field Stop
IGBT Termination: Solder
Power Dissipation: 208W
IGBT Configuration: Six Pack [Full Bridge]
Transistor Mounting: Panel
DC Collector Current: 50A
Power Dissipation Pd: 208W
Transistor Case Style: Module
Operating Temperature Max: 175°C
Junction Temperature Tj Max: 175°C
Continuous Collector Current: 50A
Collector Emitter Voltage Max: 650V
Collector Emitter Voltage V(br)ceo: 650V
Collector Emitter Saturation Voltage: 1.95V
Collector Emitter Saturation Voltage Vce(on): 1.95V

Delivery and price
Units per pack	18
Price	27.97 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 16, 2026