![A1P50S65M2 — IGBT Module, Six Pack [Full Bridge], 50 A, 1.95 V, 208 W, 175 °C, Module](/media/4/E/E/4AB1AA2D5495BEE4.webp)
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A1P50S65M2
IGBT Module, Six Pack [Full Bridge], 50 A, 1.95 V, 208 W, 175 °C, Module
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- Manufacturer: STMICROELECTRONICS
- Product type: IGBT Modules
- Transistor Polarity:NPN; DC Collector Current:50A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:208W; Collector Emitter Voltage V(br)ceo:650V; Transisto
- SVHC: No SVHC (21-Jan-2025)
- Product Range: ACEPACK 1
- IGBT Technology: Trench Field Stop
- IGBT Termination: Solder
- Power Dissipation: 208W
- IGBT Configuration: Six Pack [Full Bridge]
- Transistor Mounting: Panel
- DC Collector Current: 50A
- Power Dissipation Pd: 208W
- Transistor Case Style: Module
- Operating Temperature Max: 175°C
- Junction Temperature Tj Max: 175°C
- Continuous Collector Current: 50A
- Collector Emitter Voltage Max: 650V
- Collector Emitter Voltage V(br)ceo: 650V
- Collector Emitter Saturation Voltage: 1.95V
- Collector Emitter Saturation Voltage Vce(on): 1.95V
| Delivery and price | |
|---|---|
| Units per pack | 18 |
| Price | 27.97 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
**A1P50S65M2** Datasheet ACEPACK™ 1 sixpack topology, 650 V, 50 A, ‑ trench gate field stop M series IGBT with soft diode and NTC ## **Features** - ACEPACK™ 1 power module - DBC Cu Al2O3 Cu - Sixpack topology - 650 V, 50 A IGBTs and diodes - Soft and fast recovery diode - Integrated NTC **==> picture [54 x 7] intentionally omitted <==** **----- Start of picture text -----**<br> ACEPACK™ 1<br>**----- End of picture text -----**<br> ## **Applications** - Inverters - Industrial - Motor drives ## **Description** This power module is a sixpack topology in an ACEPACK™ 1 package with NTC, integrating the advanced trench gate field-stop technologies from STMicroelectronics. This new IGBT technology represents the best compromise between conduction and switching loss, to maximize the efficiency of any converter system up to 20 kHz. ## **Product status** A1P50S65M2 |**Product summary**|**Product summary**| |---|---| |**Order code**|A1P50S65M2| |**Marking**|A1P50S65M2| |**Package**|ACEPACK™ 1| |**Leads type**<br>Solder contact pins|Solder contact pins| **DS12332** - **Rev 3** - **November 2018** For further information contact your local STMicroelectronics sales office. www.st.com **A1P50S65M2 Electrical ratings** **1 Electrical ratings** ## **1.1 IGBT** Limiting values at TJ = 25 °C, unless otherwise specified. **Table 1. Absolute maximum ratings of the IGBT** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VCES|Collector-emitter voltage (VGE= 0 V)|650|V| |IC|Continuous collector current (TC= 100 °C)|50|A| |ICP(1)|Pulsed collector current (tp= 1 ms)|100|A| |VGE|Gate-emitter voltage|±20|V| |PTOT|Total power dissipation of each IGBT (TC= 25 °C, TJ= 175 °C)|208|W| |TJMAX|Maximum junction temperature|175|°C| |TJop|Operating junction temperature range under switching conditions|-40 to 150|°C| _1. Pulse width limited by maximum junction temperature._ **Table 2. Electrical characteristics of the IGBT** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |V(BR)CES|Collector-emitter<br>breakdown voltage|IC= 1 mA, VGE= 0 V|650|||V| |VCE(sat)<br>(terminal)|Collector-emitter<br>saturation voltage|VGE= 15 V, IC= 50 A||1.95|2.3|V| |||VGE= 15 V, IC= 50 A, TJ= 150 ˚C||2.3||| |VGE(th)|Gate threshold voltage|VCE= VGE, IC= 1 mA|5|6|7|V| |ICES|Collector cut-off current|VGE= 0 V, VCE= 650 V|||100|µA| |IGES|Gate-emitter leakage<br>current|VCE= 0 V, VGE= ± 20 V|||± 500|nA| |Cies|Input capacitance|VCE= 25 V, f = 1 MHz,<br>VGE= 0 V||4150||pF| |Coes|Output capacitance|||170||pF| |Cres|Reverse transfer<br>capacitance|||80||pF| |Qg|Total gate charge|VCC= 520 V, IC= 50 A,<br>VGE= ±15 V||150||nC| |td(on)|Turn-on delay time|VCC= 300 V, IC= 50 A,<br>RG= 6.8 Ω, VGE= ±15 V,<br>di/dt = 2400 A/µs||143||ns| |tr|Current rise time|||16.5||ns| |Eon(1)|Turn-on switching energy|||0.140||mJ| |td(off)|Turn-off delay time|VCC= 300 V, IC= 50 A,<br>RG= 6.8 Ω, VGE= ±15 V,<br>dv/dt = 7600 V/µs||112||ns| |tf|Current fall time|||149||ns| |Eoff(2)|Turn-off switching energy|||1.45||mJ| **DS12332** - **Rev 3** **page 2/14** **A1P50S65M2 Diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |td(on)|Turn-on delay time|VCC= 300 V, IC= 50 A,<br>RG= 6.8 Ω, VGE= ±15 V,<br>di/dt = 2062 A/µs, TJ= 150 °C||148||ns| |tr|Current rise time|||19.2||ns| |Eon(1)|Turn-on switching energy|||0.311||mJ| |td(off)|Turn-off delay time|VCC= 300 V, IC= 50 A,<br>RG= 6.8 Ω, VGE= ±15 V,<br>dv/dt = 5800 V/µs, TJ= 150 °C||110||ns| |tf|Current fall time|||221||ns| |Eoff(2)|Turn-off switching energy|||1.98||mJ| |tSC|Short-circuit withstand<br>time|VCC≤ 360 V, VGE≤ 15 V,<br>TJstart≤ 150 °C|6|||µs| |RTHj-c|Thermal resistance<br>junction-to-case|Each IGBT||0.65|0.72|°C/W| |RTHc-h|Thermal resistance case-<br>to-heatsink|Each IGBT, λgrease= 1 W/(m·°C)||0.79||°C/W| _1. Including the reverse recovery of the diode._ _2. Including the tail of the collector current._ ## **1.2** ## **Diode** Limiting values at TJ = 25 °C, unless otherwise specified. **Table 3. Absolute maximum ratings of the diode** |**Symbol**|**Parameter**|**Value**|**Unit**| |---|---|---|---| |VRRM|Repetitive peak reverse voltage|650|V| |IF|Continuous forward current at (TC= 100 °C)|50|A| |IFP(1)|Pulsed forward current (tp= 1 ms)|100|A| |TJMAX|Maximum junction temperature|175|°C| |TJop|Operating junction temperature range under switching conditions|-40 to 150|°C| _1. Pulse width limited by maximum junction temperature._ **Table 4. Electrical characteristics of the diode** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |VF(terminal)|Forward voltage|IF= 50 A|-|1.85|2.65|V| |||IF= 50 A, TJ= 150 ˚C|-|1.65||| |trr|Reverse recovery time|IF= 50 A, VR= 300 V,<br>VGE= ±15 V, di/dt = 2400 A/μs|-|142||ns| |Qrr|Reverse recovery charge||-|1.87||µC| |Irrm|Reverse recovery current||-|40||A| |Erec|Reverse recovery energy||-|0.41||mJ| |trr|Reverse recovery time|IF= 50 A, VR= 300 V,<br>VGE= ±15 V, di/dt = 2062 A/μs,<br>TJ= 150 °C|-|260||ns| |Qrr|Reverse recovery charge||-|5.2||µC| |Irrm|Reverse recovery current||-|58||A| |Erec|Reverse recovery energy||-|1.32||mJ| **DS12332** - **Rev 3** **page 3/14** **A1P50S65M2 NTC** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |RTHj-c|Thermal resistance<br>junction-to-case|Each diode|-|1.0|1.1|°C/W| |RTHc-h|Thermal resistance case-<br>to-heatsink|Each diode, λgrease= 1 W/(m·°C)|-|0.9||°C/W| ## **1.3** ## **NTC** **Table 5. NTC temperature sensor, considered as stand-alone** |**Symbol**|**Parameter**|**Test conditions**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---|---| |R25|Resistance|T = 25°C||5||kΩ| |R100|Resistance|T = 100°C||493||Ω| |ΔR/R|Deviation of R100||-5||+5|%| |B25/50|B-constant|||3375||K| |B25/80|B-constant|||3411||K| |T|Operating temperature range||-40||150|°C| **==> picture [456 x 172] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 1. NTC resistance vs temperature Figure 2. NTC resistance vs temperature, zoom<br>R GADG260720171142NTC R GADG260720171151NTCZ<br>(Ω) (Ω)<br>800<br>max<br>10 [4 ] 700<br>600<br>min<br>10 [3 ] 500<br>typ<br>400<br>10 [2 ] 300<br>0 25 50 75 100 125 TC (°C) 85 90 95 100 105 110 TC (°C)<br>**----- End of picture text -----**<br> ## **1.4** ## **Package** **Table 6. ACEPACK™ 1 package** |**Symbol**|**Parameter**|**Min.**|**Typ.**|**Max.**|**Unit**| |---|---|---|---|---|---| |Visol|Isolation voltage (AC voltage, t = 60 s)|||2500|Vrms| |Tstg|Storage temperature|-40||125|°C| |CTI|Comparative tracking index|200|||| |Ls|Stray inductance module P1 - EW loop||28.7||nH| |Rs|Module single lead resistance, terminal-to-chip||3.9||mΩ| **DS12332** - **Rev 3** **page 4/14** **A1P50S65M2 Electrical characteristics (curves)** ## **2** ## **Electrical characteristics (curves)** **==> picture [513 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 3. IGBT output characteristics Figure 4. IGBT output characteristics<br>(VGE = 15 V, terminal) (TJ = 150 °C, terminal)<br>Ic IGBT111020170929TCH IC IGBT101020171341OC25<br>(A) (A) 19 V 13 V<br>90<br>17 V<br>80 80<br>TJ = 25 °C 15 V 11 V<br>70<br>60 60<br>TJ = 150 °C<br>50<br>40 40<br>30<br>VGE = 9 V<br>20 20<br>10<br>0 0<br>0 1 2 3 4 VCE (V) 0 1 2 3 4 VCE (V)<br>**----- End of picture text -----**<br> **==> picture [513 x 207] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 5. IGBT transfer characteristics<br>Figure 6. IGBT collector current vs case temperature<br>(VCE = 15 V, terminal)<br>IC IGBT051120181512CCT<br>IC IGBT101020171339OC25 (A)<br>(A)<br>100<br>80<br>80<br>TJ = 25 °C<br>60<br>60<br>40<br>40<br>TJ = 150 °C<br>VCC = 15 V, TJ ≤ 175 °C<br>20 20<br>0<br>0 0 25 50 75 100 125 150 TC (°C)<br>5 6 7 8 9 10 11 12 VGE (V)<br>**----- End of picture text -----**<br> **DS12332** - **Rev 3** **page 5/14** **A1P50S65M2 Electrical characteristics (curves)** **==> picture [513 x 420] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 7. Switching energy vs gate resistance Figure 8. Switching energy vs collector current<br>E IGBT101020171348SLG E IGBT101020171351SLC<br>(mJ) VCC = 300 V, IC = 50 A, VGE = ±15 V (mJ) VCC = 300 V, RG = 6.8 Ω, VGE = ±15 V<br>4.0<br>EON (TJ = 150 °C) 3 EOFF (TJ = 150 °C)<br>3.0 EOFF (TJ = 25 °C)<br>EOFF (TJ = 150 °C) EON (TJ = 25 °C)<br>2<br>2.0<br>EON (TJ = 150°C)<br>EOFF (TJ = 25 °C) 1<br>1.0 EON (TJ = 25 °C)<br>0 0<br>0 20 40 60 80 RG (Ω) 10 30 50 70 90 IC (A)<br>Figure 9. IGBT reverse biased safe operating area<br>Figure 10. Diode forward characteristics<br>(RBSOA)<br>(A) IC TJ = 125 °C, VGE = ±15 V, RIGBT101020171353OC25G = 6.8 Ω (A)IF IGBT101020171356DVF<br>50 80<br>40 TJ = 150 °C<br>60<br>30<br>40<br>20<br>TJ = 25 °C<br>20<br>10<br>0<br>0 0 0.4 0.8 1.2 1.6 2.0 VF (V)<br>0 100 200 300 400 500 600 VCE (V)<br>**----- End of picture text -----**<br> **==> picture [513 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 11. Diode reverse recovery energy vs diode current Figure 12. Diode reverse recovery energy vs forward<br>slope current<br>Erec IGBT101020171356OC25 Erec IGBT101020171402RRE<br>(mJ) VCE = 300 V, VGE = ±15 V, IF = 50 A (mJ) VCE = 300 V, VGE = ±15 V, RG = 6.8 Ω<br>1.2 1.6<br>TJ = 150 °C TJ = 150 °C<br>0.9 1.2<br>0.6 0.8<br>0.3 0.4<br>TJ = 25 °C TJ = 25 °C<br>0 0<br>200 750 1300 1850 di/dt (A/µs) 10 30 50 70 90 IF (A)<br>**----- End of picture text -----**<br> **DS12332** - **Rev 3** **page 6/14** **A1P50S65M2 Electrical characteristics (curves)** **==> picture [513 x 206] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 13. Diode reverse recovery energy vs gate<br>Figure 14. Inverter diode thermal impedance<br>resistance<br>Zth IGBT111020170844MT<br>Erec IGBT101020171406RRE (°C/W)<br>(mJ) VCE = 300 V, VGE = ±15 V, IF = 50 A<br>1.2<br>Zth(typ.)JH<br>TJ = 150 °C<br>0.9<br>10 [0]<br>Zth(max.)JC<br>0.6 JC RC - Foster thermal network<br>i r i ( ˚ C/W) 0.17461 0.51692 0.28513 0.11974<br>TJ = 25 °C τ i(s) 0.0008 0.0074 0.0368 0.2601<br>0.3 JH RC - Foster thermal network<br>r i i (˚C/W) 0.20911 0.57352 0.75113 0.36154<br>10 [-1] τ i(s) 0.0010 0.0116 0.0729 0.3310<br>0<br>10 [-3] 10 [-2] 10 [-1] 10 [0] t (s)<br>0 20 40 60 80 RG (Ω)<br>**----- End of picture text -----**<br> **==> picture [188 x 185] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 15. IGBT thermal impedance<br>Zth IGBT111020170846MT<br>(°C/W)<br>Zth(typ.)JH<br>10 [0 ]<br>Zth(max.)JC<br> JC RC - Foster thermal network<br>i ri (˚C/W) 0.0718 1 0.2858 2 0.2471 3 0.1130 4<br>τ i(s) 0.0002 0.0072 0.0392 0.2850<br> JH RC - Foster thermal network<br>i ri (˚C/W) 0.08081 0.31442 0.67013 0.37134<br>10 [-1 ] τ i(s) 0.0003 0.0113 0.0752 0.3492<br>10 [-3 ] 10 [-2 ] 10 [-1 ] 10 [0 ] t (s)<br>**----- End of picture text -----**<br> **DS12332** - **Rev 3** **page 7/14** **A1P50S65M2 Test circuits** **3 Test circuits** **==> picture [513 x 176] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 16. Test circuit for inductive load switching Figure 17. Gate charge test circuit<br>A A<br>C<br>G L=100µH k k<br>E B<br>B<br>C 3.3µF 1000µF VCC<br>k<br>G D.U.T<br>k<br>+ RG E<br>k<br>-<br>k<br>AM01504v1 AM01505v1<br>**----- End of picture text -----**<br> **==> picture [513 x 195] intentionally omitted <==** **----- Start of picture text -----**<br> Figure 19. Diode reverse recovery waveform<br>Figure 18. Switching waveform<br>90%<br>VG 10%<br>90%<br>VCE Tr(Voff) 10%<br>Tcross<br>90% 25<br>IC Td(on)Ton Tr(Ion) Td(off)Toff Tf 10%<br>AM01506v1<br>**----- End of picture text -----**<br> **DS12332** - **Rev 3** **page 8/14** **A1P50S65M2 Topology and pin description** **4** ## **Topology and pin description** **Figure 20. Electrical topology and pin description** **==> picture [259 x 205] intentionally omitted <==** **----- Start of picture text -----**<br> P<br>G1 G3 G5<br>T1<br>U<br>V<br>W<br>T2 G2 G4 G6<br>E’U E’V E’W<br>EU EV EW<br>**----- End of picture text -----**<br> **Figure 21. Package top view with sixpack pinout** **DS12332** - **Rev 3** **page 9/14** **A1P50S65M2 Package information** **5 Package information** In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK[®] packages, depending on their level of environmental compliance. ECOPACK[®] specifications, grade definitions and product status are available at: www.st.com. ECOPACK[®] is an ST trademark. **DS12332** - **Rev 3** **page 10/14** **A1P50S65M2 ACEPACK™ 1 sixpack solder pins package information** ## **5.1 ACEPACK™ 1 sixpack solder pins package information** **Figure 22. ACEPACK™ 1 sixpack solder pins package outline (dimensions are in mm)** **==> picture [356 x 459] intentionally omitted <==** **----- Start of picture text -----**<br> 32.00<br>E'W EW G4 EV E'V EU E'U 28.80<br>G6 G2 25.60<br>T1<br>T2 22.40<br>P 16.00<br>P<br>12.80<br>W U<br>W V V G3 U 6.40<br>G5 G1<br>3.20<br>0.00<br> 3.2 BSC<br>□0.64±0.03<br>33.8±0.3<br>Section B-B 28.1±0.2<br>19.4±0.2<br>8.5<br> 16.4±0.2<br>1.3±0.2<br>B<br>B<br>Detail A<br> 2.5±0.2<br>A<br>A<br> 3.5 REF x45°<br>4.5±0.1<br>GADG240820170900MT_8569715_4<br>25.60 22.40 19.20 16.00 9.60 6.40 3.20 0.00 15.5±0.50 12±0.35<br>2.3 REF<br>3.2 BSC<br>36.8 REF 62.8±0.5 48±0.3 41±0.2 42.5±0.2 53±0.1<br>**----- End of picture text -----**<br> - The lead size includes the thickness of the lead plating material. - Dimensions do not include mold protrusion. - Package dimensions do not include any eventual metal burrs. **DS12332** - **Rev 3** **page 11/14** **A1P50S65M2** ## **Revision history** **Table 7. Document revision history** |**Date**|**Revision**|**Changes**| |---|---|---| |11-Oct-2017|1|Initial release.| |16-Feb-2018|2|Updated features and removed maturity status indication from cover page.<br>Updated_Figure 13. Inverter diode thermal impedance_and_Figure 14. IGBT thermal_<br>_impedance_.<br>Updated_Figure 21. ACEPACK™ 1 sixpack solder pins package outline_<br>_(dimensions are in mm)_.<br>Minor text changes| |14-Nov-2018|3|AddedFigure 6. IGBT collector current vs case temperature.<br>Minor text changes| **DS12332** - **Rev 3** **page 12/14** **A1P50S65M2 Contents** ## **Contents** |**1**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**|**Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2**| |---|---|---| ||**1.1**|IGBT . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2| ||**1.2**|Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3| ||**1.3**|NTC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4| ||**1.4**|Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4| |**2**|**Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .5**|| |**3**|**Test**|**circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8**| |**4**|**Topology and pin description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .9**|| |**5**|**Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10**|| ||**5.1**|ACEPACK™ 1 sixpack solder pins package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11| |**Revision**||**history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12**| **DS12332** - **Rev 3** **page 13/14** **A1P50S65M2** ## **IMPORTANT NOTICE – PLEASE READ CAREFULLY** STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved **DS12332** - **Rev 3** **page 14/14**
Updated at April 16, 2026
STMicroelectronics is a global leader in the semiconductor industry, recognized for developing highly integrated, energy-efficient solutions that power modern electronics. With a strong focus on innovation, ST provides a comprehensive portfolio of microelectronics that address the demanding requirements of industrial, automotive, communications, and consumer applications. Our extensive selection of STMicroelectronics components is built around a robust lineup of discrete semiconductors and circuit protection devices. We offer a wide variety of single MOSFETs, Schottky diodes, and fast and ultrafast recovery rectifier diodes, designed to deliver exceptional efficiency and thermal performance in power management and conversion systems. For robust circuit protection, our inventory features hundreds of transient voltage suppressors and TVS diodes that safeguard sensitive electronic components against destructive voltage spikes. In addition to core power discretes like TRIACs, SCRs, bipolar transistors, and single IGBTs, our STMicroelectronics range includes specialized integrated passive filters and MEMS sensors. Furthermore, ST offers advanced integrated passive devices, such as baluns and RF filters, which utilize high-quality monolithic RF IPD processes on glass or high-resistance silicon substrates. These components provide competitive cost structures, reduced power losses, and simplified RFIC-to-antenna matching, ensuring optimal system performance and delivering the reliability required for next-generation wireless and power designs.
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