A1P35S12M3

IGBT Module, Six Pack [Full Bridge], 35 A, 1.95 V, 250 W, 150 °C, Module

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Manufacturer: STMICROELECTRONICS
Product type: IGBT Modules
Transistor Polarity:N Channel; DC Collector Current:35A; Collector Emitter Saturation Voltage Vce(on):1.95V; Power Dissipation Pd:250W; Collector Emitter Voltage V(br)ceo:1.2kV; Transistor
SVHC: No SVHC (25-Jun-2025)
Product Range: ACEPACK 1 M
IGBT Technology: Trench Field Stop
IGBT Termination: Solder
Power Dissipation: 250W
IGBT Configuration: Six Pack [Full Bridge]
Transistor Mounting: Panel
Transistor Polarity: N Channel
DC Collector Current: 35A
Power Dissipation Pd: 250W
Transistor Case Style: Module
Operating Temperature Max: 150°C
Junction Temperature Tj Max: 150°C
Continuous Collector Current: 35A
Collector Emitter Voltage Max: 1.2kV
Collector Emitter Voltage V(br)ceo: 1.2kV
Collector Emitter Saturation Voltage: 1.95V
Collector Emitter Saturation Voltage Vce(on): 1.95V

Delivery and price
Units per pack	50
Price	36.25 €
Current stock	10+
Lead time	30 days

Datasheet

Updated at April 16, 2026