Illustrative purposes only
55GN01CA-TB-E
Bipolar - RF Transistor, NPN, 10 V, 5.5 GHz, 200 mW, 70 mA, TO-236AB (SOT-23)
⚠️ Given the current worldwide supply chain situation, we kindly ask you to take the information shown as a guideline.
- Manufacturer: ONSEMI
- Product type: Bipolar RF Transistors
- Product variants: No other variants available. No other names.
- No. of Pins: 3Pins
- Power Dissipation: 200mW
- Transistor Mounting: Surface Mount
- Transistor Polarity: NPN
- Transition Frequency: 5.5GHz
- Transistor Case Style: TO-236AB (SOT-23)
- DC Current Gain hFE Min: 100hFE
- Operating Temperature Max: 150°C
- Continuous Collector Current: 70mA
- Collector Emitter Voltage Max: 10V
| Delivery and price | |
|---|---|
| Units per pack | 6000 |
| Price | 0.078 € |
| Current stock | N/A |
| Lead time | 30 days |
Datasheet
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