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40EPF12PBF
Fast / Ultrafast Diode, 1.2 kV, 20 A, Single, 1.25 V, 95 ns, 475 A
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- Manufacturer: VISHAY
- Product type: Fast & Ultrafast Recovery Rectifier Diodes
- No. of Pins: 3 Pin
- Product Range: 40EPF
- Diode Case Style: TO-247AC
- Diode Configuration: Single
- Forward Voltage Max: 1.25V
- Forward Surge Current: 475A
- Reverse Recovery Time: 95ns
- Average Forward Current: 20A
- Operating Temperature Max: 150°C
- Repetitive Peak Reverse Voltage: 1.2kV
| Delivery and price | |
|---|---|
| Units per pack | 10 |
| Price | 3.53 € |
| Current stock | 10+ |
| Lead time | 30 days |
Datasheet
Bulletin I2129 rev. A 06/98 ## **R** Series 40EPF.. HV ## FAST SOFT RECOVERY RECTIFIER DIODE ## **Description/Features** V < 1.25V @ 20A F t = 95 ns rr V RRM 1000 to 1200V The 40EPF.. fast soft recovery **R** rectifier series has been optimized for combined short reverse recovery time and low forward voltage drop. The glass passivation ensures stable reliable operation in the most severe temperature and power cycling conditions. Typical applications are both: - output rectification and freewheeling in inverters, choppers and converters and input rectifications where severe restrictions on conducted EMI should be met. ## **Major Ratings and Characteristics** |**Characteristics**|**40EPF..**|**Units**| |---|---|---| |IF(AV) Sinusoidal waveform|40|A| |VRRM|1000 to 1200|V| |IFSM|475|A| |VF<br>@ 20 A, TJ= 25°C|1.25|V| |trr<br>@ 1A, - 100A/µs|95|ns| |TJ|- 40 to 150|°C| ## **Package Outline** **==> picture [87 x 9] intentionally omitted <==** **----- Start of picture text -----**<br> TO-247AC (Modified)<br>**----- End of picture text -----**<br> 1 ## 40EPF.. HV UIET **IR** Series Bulletin I2129 rev. A 06/98 ## Voltage Ratings |Voltage Ratings|||| |---|---|---|---| |Part Number|VRRM, maximum<br>peak reverse voltage<br>V|VRSM , maximum non repetitive<br>peak reverse voltage<br>V|IRRM<br>150°C<br>mA| |40EPF10|1000|1100|10| |40EPF12|1200|1300|| ## Absolute Maximum Ratings |Absolute Maximum Ratings|||| |---|---|---|---| |Parameters|40EPF..|Units|Conditions| |IF(AV) Max. Average Forward Current|40|A|@ TC= 105° C, 180° conduction half sine wave| |IFSM<br>Max. Peak One Cycle Non-Repetitive<br>Surge Current|400|A|10ms Sine pulse, rated VRRM applied| ||475||10ms Sine pulse, no voltage reapplied| |I2t<br>Max. I2t for fusing|800|A2s|10ms Sine pulse, rated VRRM applied| ||1131||10ms Sine pulse, no voltage reapplied| |I2√t<br>Max. I2√t for fusing|11310|A2√s|t = 0.1 to 10ms, no voltage reapplied| ## Electrical Specifications |Electrical Specifications||||| |---|---|---|---|---| |Parameters|40EPF..|Units|Conditions|| |VFM<br>Max. Forward Voltage Drop|1.4|V|@ 40A, TJ= 25°C|| |rt<br>Forward slope resistance|6.82|mΩ|TJ= 125°C|| |VF(TO) Threshold voltage|0.94|V||| |IRM<br>Max. Reverse Leakage Current|0.1|mA|TJ= 25 °C|VR= rated VRRM| ||10||TJ= 150 °C|| ## Recovery Characteristics |Recovery Characteristics<br>~~ee~~|~~ee~~<br>|||| |---|---|---|---|---| |Parameters<br>es<br>~~ee~~<br>~~|~~|40EPF..<br>es<br>~~ee~~<br>~~ee~~<br>~~|~~|Units<br>es<br>~~ee~~<br>|Conditions|~~oO.~~<br>'<br>at<br>Be<br>IRM(REC)| |trr<br>Reverse Recovery Time<br>~~ee~~<br>~~|~~|450<br>~~ee~~<br>~~ee~~<br>~~|~~|ns<br>~~ee~~<br>|IF@ 10Apk<br>@ 25A/ µs<br>@ 25°C|| |rr<br>Irr<br>Reverse Recovery Current<br>Q<br>Reverse Recovery Charge<br>~~ee ~~<br>~~|~~<br>|<br>||6<br>1.8<br>~~ee~~<br> ~~ee ~~<br>~~| |~~<br>||<br>||A<br>µC<br> ~~ee~~<br>~~|~~<br>|||| |Qrr<br>Reverse Recovery Charge<br>S<br>Typical Snap Factor<br><br>|<br>||1.8<br>0.5<br> ~~|~~<br>| |<br>||µC<br>@ 25°C<br>~~|~~<br>|||| 2 ## 40EPF.. HV **R** Series Bulletin I2129 rev. A 06/98 ## Thermal-Mechanical Specifications |Parameters|40EPF..|Units|Conditions| |---|---|---|---| |TJ<br>Max. Junction Temperature Range|Max. Junction Temperature Range<br>- 40 to 150|°C|| |Tstg<br>Max. Storage Temperature Range|Max. Storage Temperature Range<br>- 40 to 150|°C|| |RthJC Max. Thermal Resistance Junction<br>to Case|Max. Thermal Resistance Junction<br>0.6|°C/W|DC operation| |RthJA Max. Thermal Resistance Junction<br>to Ambient|Max. Thermal Resistance Junction<br>40|°C/W|| |RthCS Typical Thermal Resistance, Case to<br>Heatsink|Typical Thermal Resistance, Case to<br>0.2|°C/W|Mounting surface , smooth and greased| |wt<br>Approximate Weight|6 (0.21)|g (oz.)|| |T<br>Mounting Torque<br>Min.<br>Max.|6 (5)|Kg-cm<br>(Ibf-in)|| ||Max.<br>12 (10)||| |Case Style|TO-247AC||JEDEC (Modified)| **==> picture [163 x 351] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>40EPF.. Series<br>140 R (DC) = 0.6 °C/WthJC<br>130 | ASS<br>120 ShANNG<br>Conduction Angle<br>110 SRUNNS<br>100<br>90 SRNENNNGE 30°<br>60°<br>80 So H 90° HA<br>120°<br>70 || en<br>180°<br>P| TAL |<br>60 Pt] ety LE |<br>0 5 10 15 20 25 30 35 40 45<br>Average Forward Current (A)<br>Fig. 1 - Current Rating Characteristics<br>70<br>180°<br>60 Seen 120° e7/a<br>90°<br>60°<br>50 30°<br>RMS Limit<br>40<br>T G<br>30<br>nnn / Conduction Angle ane<br>20 IF<br>40EPF.. Series<br>10 Vann T = 150°CJ<br>0<br>0 5 10 15 20 25 30 35 40 45<br>A co<br>Average Forward Current (A)<br>Fig. 3 - Forward Power Loss Characteristics<br>Maximum Allowable Case Temperature (°C)<br>Maximum Average Forward Power Loss (W)<br>**----- End of picture text -----**<br> **==> picture [177 x 350] intentionally omitted <==** **----- Start of picture text -----**<br> 150<br>40EPF.. Series<br>140 R (DC) = 0.6 °C/WthJC<br>130 RNS<br>120 PAANAIN<br>Conduction Period<br>110 man<br>30°<br>100<br>60°<br>90 = S SS<br>90°<br>80 | 120° VAL A<br>70 AN 180° nin DC<br>60 |mineLULL 7 a<br>0 10 20 30 40 50 60 70<br>Average Forward Current (A)<br>Fig. 2 - Current Rating Characteristics<br>90<br>DC<br>80 180° =s//em<br>120°<br>70 90°<br>60°<br>60<br>30°<br>50<br>aan<br>RMS Limit<br>40<br>30 ar en Conduction Period<br>My —<br>20<br>40EPF.. Series<br>100 FAL T = 150°CJ<br>0 10 20 30 40 50 60 70<br>| A<br>Average Forward Current (A)<br>Fig. 4 - Forward Power Loss Characteristics<br>Maximum Allowable Case Temperature (°C)<br>Maximum Average Forward Power Loss (W)<br>**----- End of picture text -----**<br> 3 ## 40EPF.. HV UIET **IR** Series Bulletin I2129 rev. A 06/98 **==> picture [168 x 174] intentionally omitted <==** **----- Start of picture text -----**<br> 500<br>Maximum Non Repetitive Surge Current<br>Versus Pulse Train Duration.<br>450<br>Initial T = 150°CJ<br>400 No Voltage Reapplied<br>Rated V ReappliedRRM<br>BNE!<br>350<br>300 PNT<br>250<br>~ ths<br>200 PL |TIN<br>I HTT<br>im SN<br>150 40EPF.. Series<br>Be sa<br>100 lL LHS<br>0.01 0.1 1<br>Pulse Train Duration (s)<br>Fig. 6 - Maximum Non-Repetitive Surge Current<br>Peak Half Sine Wave Forward Current (A)<br>**----- End of picture text -----**<br> **==> picture [263 x 342] intentionally omitted <==** **----- Start of picture text -----**<br> 450 500<br>At Any Rated Load Condition And With<br>400 \ Rated V Applied Following Surge.RRM Initial T = 150°CJ 450<br>@ 60 Hz 0.0083 s<br>400<br>350 @ 50 Hz 0.0100 s<br>S e ee<br>350<br>300<br>300<br>250<br>PNT Th<br>250<br>| TT PNY TTT<br>200 0 200<br>Lt<br> TTT SSA EET TT<br>150 40EPF.. Series 150<br>S S<br>100 es 100<br>1 10 100<br>Number Of Equal Amplitude Half Cycle Current Pulses (N)<br>Fig. 5 - Maximum Non-Repetitive Surge Current<br>1000<br>100 | fj | |<br>=— T = 25°CJ = =<br>10 T = 150°CJ<br>5 === 40EPF.. Series<br>He<br>1<br>0 1 2 3 4 5 6<br>Instantaneous Forward Voltage (V)<br>Peak Half Sine Wave Forward Current (A) Peak Half Sine Wave Forward Current (A)<br>Instantaneous Forward Current (A)<br>**----- End of picture text -----**<br> Fig. 7 - Forward Voltage Drop Characteristics **==> picture [404 x 175] intentionally omitted <==** **----- Start of picture text -----**<br> 0.7 2<br>40EPF.. Series 40EPF.. Series<br>0.6 neeeee T = 25°CJ 1.6 Py T = 150°CJ<br>0.5 ACE CEE EE<br>I = 60 AFM<br>\ 1.2 re 40 A P| tl<br>0.4<br>20 A<br>I = 40 AFM 10 A<br>0.3 SEE HH 0.8 ACL 5 A NOE<br>S SS 30 A KET 1 A SCT<br>0.2 NEAL 10 A ANS NNEE<br>5 A 0.4<br>0.1 YS ORESES ASSES<br>SL Tr 1 A | WSS ES<br>0 PTET EET T T 0 —CCRRSEES=<br>0 40 80 120 160 200 0 40 80 120 160 200<br>Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)<br>Fig. 8 - Recovery Time Characteristics, TJ = 25°C Fig. 9 - Recovery Time Characteristics, TJ = 150°C<br>Maximum Reverse Recovery Time - Trr (µs) Maximum Reverse Recovery Time - Trr (µs)<br>**----- End of picture text -----**<br> 4 ## 40EPF.. HV **R** Series Bulletin I2129 rev. A 06/98 **==> picture [407 x 551] intentionally omitted <==** **----- Start of picture text -----**<br> Tor Rectifier Bulletin I2129 rev. A 06/98<br>6 20<br>40EPF.. Series 40EPF.. Series<br>5 T = 25°CJ I = 40 AFM T = 150°CJ I = 60 AFM<br>16<br>CT 30 A BOETEE ESD<br>4 40 A<br>12<br>TT ee r i erry<br>3 20 A<br>ALLEL E 10 A 8 TAT EL L<br>2 10 A<br>5 A<br>4 5 A<br>1 y22n00nnn n fas e<br>1 A 1 A<br>0 EE EEE EHH 0 e e<br>0 40 80 120 160 200 0 40 80 120 160 200<br>Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)<br>Fig. 10 - Recovery Charge Characteristics, TJ = 25°C Fig. 11 - Recovery Charge Characteristics, TJ = 150°C<br>30 50<br>40EPF.. SeriesT = 25°CJ I = 40 AFM 40EPF.. SeriesT = 150°CJ<br>25 tt 30 A 40 HH I = 60 AFM<br>40 A<br>20 10 A<br>BRLEED a 0 30 a E 20 A<br>15 10 A<br>5 A<br>BEEDZE02ce 20 AE 5 A<br>10 er e 1 A wzeee<br>10<br>5 fe o ae<br>1 A<br>0 0<br>0 ATLL] 40 80 120 EET 160 200 0 A 40 80 120 160 200<br>Rate Of Fall Of Forward Current - di/dt (A/µs) Rate Of Fall Of Forward Current - di/dt (A/µs)<br>Fig. 12 - Recovery Current Characteristics, TJ = 25°C Fig. 13 - Recovery Current Characteristics, TJ = 150°C<br>1 Seeeen Steady State Value<br>(DC Operation)<br>EO SESS ll<br>|<br>D = 0.50<br>Ieee<br>D = 0.33<br>|<br>D = 0.25<br>D = 0.17 ert rrr UTI TUTTI<br>D = 0.08<br>Single Pulse 40EPF.. Series<br>0.1 g ira MA RT A<br>0.0001 0.001 0.01 0.1 1 10<br>Square Wave Pulse Duration (s)<br>Maximum Reverse Recovery Charge - Qrr (µC) Maximum Reverse Recovery Charge - Qrr (µC)<br>Maximum Reverse Recovery Current - Irr (A) Maximum Reverse Recovery Current - Irr (A)<br>thJC<br>Transient Thermal Impedance Z (°C/W)<br>**----- End of picture text -----**<br> Fig. 14 - Thermal Impedance ZthJC Characteristics 5 ## 40EPF.. HV **IR** Series Bulletin I2129 rev. A 06/98 ## Outline Table **==> picture [303 x 234] intentionally omitted <==** **----- Start of picture text -----**<br> 15 .90 (0 .626) 3. 65 (0.14 4) DIA. 5.30 ( 0 .209)<br>3. 55 (0 .13 9) 4.70 ( 0.185)<br>15 .30 (0 .602) 2.5 ( 0.098)<br>1.5 ( 0.059)<br>5.70 ( 0.225)<br>5.30 ( 0.208)<br>20 .30 (0 .800)<br>19 .70 (0 .775) 5.50 ( 0.217)<br>4. 50 (0.177)<br>1 3 (2 PLCS.)<br>n 14. 80 (0.583) ice<br>14 .20 (0 .559) 4.30 (0.170)<br>3. 70 (0.145)<br>l 1.40 ia ( 0 .05 6) l ; 2. 20 (0 .08 7)M AX . 4 2. 40 (0 .09 5)M AX . —<br>1.00 (0 .03 9) 0.80 ( 0.032)<br>0.40 (0 .21 3)<br>10. 94 ( 0.430)<br>_ ; _T<br>10.86 (0.427 )<br>Dimensions in millimeters and inches<br>**----- End of picture text -----**<br> ## Ordering Information Table **==> picture [291 x 177] intentionally omitted <==** **----- Start of picture text -----**<br> Device Code<br>40 E P F 12 BASE<br>CATHODE<br>2<br>1 2 3 4 5<br>1 - Current Rating 1 3<br>- 2 - Circuit Configuration: CATHODE ANODE<br>E = Single Diode<br>3 - Package:<br>P = TO-247AC (Modified)<br>4 - Type of Silicon:<br>F = Fast Recovery<br>10 = 1000V<br>5 - Voltage code: Code x 100 = VRRM 12 = 1200V<br>6 [ —<br>**----- End of picture text -----**<br> 6
Updated at February 9, 2023
Vishay is a global leader in the manufacturing of discrete semiconductors and passive electronic components. Renowned for its exceptional quality and engineering expertise, the company produces highly reliable solutions that drive innovation across the industrial, automotive, telecommunications, and consumer electronics markets. From advanced factory automation to vehicle electrification, Vishay components provide the foundational building blocks for modern electronic design. The company's expansive portfolio is heavily focused on efficient power management, signal routing, and energy storage. Within its passive component lineup, Vishay is recognized for its extensive array of high-performance capacitors, including robust aluminium electrolytic, film, and polymer variants, alongside highly efficient power inductors. In the realm of discrete semiconductors, Vishay is a premier manufacturer of single and dual MOSFETs, as well as a vast selection of Schottky, Zener, and fast-recovery rectifier diodes designed for demanding power applications. Furthermore, Vishay delivers industry-leading circuit protection and thermal management solutions. With a broad offering of transient voltage suppressors (TVS diodes) and temperature-sensing NTC thermistors, these components are engineered to safeguard sensitive circuitry against both electrical and thermal overstress. By combining this vital mix of advanced discretes and passives, Vishay enables engineers to develop robust, space-saving, and highly resilient electronic systems.
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