3LP01SS-TL-H.

~~_~~ **Ordering number : EN6648B** 

## **3LP01SS P-Channel Small Signal MOSFET –30V, –0.1A, 10.4** Ω **, Single SSFP** 

http://onsemi.com 

## **Features** 

- Low ON-resistance 

- High-speed switching 

- 2.5V drive 

## **Specifi cations** 

## **Absolute Maximum Ratings** at Ta=25°C 

**==> picture [471 x 431] intentionally omitted <==**

**----- Start of picture text -----**<br>
Parameter Symbol Conditions Ratings Unit<br>Drain-to-Source Voltage VDSS --30 V<br>Gate-to-Source Voltage  VGSS ±10 V<br>Drain Current (DC) ID --0.1 A<br>Drain Current (Pulse) IDP PW ≤ 10 μ s, duty cycle ≤ 1% --0.4 A<br>Allowable Power Dissipation PD 0.15 W<br>Channel Temperature Tch 150 °C<br>Storage Temperature Tstg --55 to +150 °C<br>This product is designed to “ESD immunity < 200V * ”, so please take care when handling.<br>*  Machine Model<br>Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating<br>Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.<br>Package Dimensions  Product & Package Information<br>unit : mm (typ) • Package  : SSFP<br>7029A-003 • JEITA, JEDEC  : SC-81<br>• Minimum Packing Quantity : 8,000 pcs./reel<br>1.4 3LP01SS-TL-E<br>0.25 0.1 3LP01SS-TL-H Packing Type: TL   Marking<br>3<br>0 to 0.02<br>XA<br>1 2<br>0.2 TL<br>0.45<br>ty Electrical Connection<br>1 2 1 : Gate 3<br>2 : Source<br>3 : Drain<br>3 SSFP<br>1<br>2<br>© |<br>0.3<br>1.4 0.8<br>LOT No. LOT No.<br>0.3<br>0.6<br>0.07<br>0.07<br>**----- End of picture text -----**<br>


Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 

Semiconductor Components Industries, LLC, 2013 **July, 2013** 

62712 TKIM/32406PE MSIM TB-00002156/92500 TSIM TA-1981  No.6648-1/7 

**3LP01SS** 

## **Electrical Characteristics** at Ta=25°C 

|**Electrical Characteristics **at Ta|=25°C||||||
|---|---|---|---|---|---|---|
|Parameter|Symbol|Conditions|Ratings|||Unit|
||||min|typ|max||
|Drain-to-Source Breakdown Voltage|V(BR)DSS|ID= --1mA, VGS=0V|--30|||V|
|Zero-Gate Voltage Drain Current|IDSS|VDS= --30V, VGS=0V|||--1|μA|
|Gate-to-Source Leakage Current|IGSS|VGS=±8V, VDS=0V|||±10|μA|
|Cutoff Voltage|VGS(off)|VDS= --10V, ID= --100μA|--0.4||--1.4|V|
|Forward Transfer Admittance|| yfs||VDS= --10V, ID= --50mA|80|110||mS|
|Static Drain-to-Source On-State Resistance|RDS(on)1|ID= --50mA, VGS= --4V||8|10.4|Ω|
||RDS(on)2|ID= --30mA, VGS= --2.5V||11|15.4|Ω|
||RDS(on)3|ID= --1mA, VGS= --1.5V||27|54|Ω|
|Input Capacitance|Ciss|VDS= --10V, f=1MHz||7.5||pF|
|Output Capacitance|Coss|||5.7||pF|
|Reverse Transfer Capacitance|Crss|||1.8||pF|
|Turn-ON Delay Time|td(on)|See specif ed Test Circuit.||24||ns|
|Rise Time|tr|||55||ns|
|Turn-OFF Delay Time|td(off)|||120||ns|
|Fall Time|tf|||130||ns|
|Total Gate Charge|Qg|VDS= --10V, VGS= --10V, ID= --100mA||1.43||nC|
|Gate-to-Source Charge|Qgs|||0.18||nC|
|Gate-to-Drain “Miller” Charge|Qgd|||0.25||nC|
|Diode Forward Voltage|VSD|IS= --100mA, VGS=0V||--0.83|--1.2|V|



## **Switching Time Test Circuit** 

**==> picture [130 x 119] intentionally omitted <==**

**----- Start of picture text -----**<br>
VDD= --15V<br>VIN<br>0V<br>--4V ID= --50mA<br>VIN RL=300 Ω<br>PW=10D.C. ≤ 1% μ s D VOUT<br>G<br>3LP01SS<br>P.G<br>50 Ω<br>S<br>**----- End of picture text -----**<br>


## **Ordering Information** 

|**Ordering Information**||||
|---|---|---|---|
|Device|Package|Shipping|memo|
|3LP01SS-TL-E|SSFP|8,000pcs./reel|Pb Free|
|3LP01SS-TL-H|SSFP|8,000pcs./reel|Pb Free and Halogen Free|



No.6648-2/7 

**3LP01SS** 

**==> picture [482 x 736] intentionally omitted <==**

**----- Start of picture text -----**<br>
ID  --  VDS ID  --  VGS<br>--0.10 --0.20<br>--3.5 V VDS= --10V<br>--0.09 --0.18<br>--0.08 --0.16<br>--2.0V 25°C<br>--0.07 --0.14<br>--0.06 --0.12<br>--0.05 --0.10<br>--0.04 --0.08<br>--0.03 --0.06<br>VGS= --1.5V<br>--0.02 --0.04<br>--0.01 --0.02<br>0 0<br>0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0<br>Drain-to-Source Voltage, VDS  --  V IT00077 Gate-to-Source Voltage, VGS  --  V IT00078<br>RDS(on)  --  VGS RDS(on)  --  ID<br>30 100<br>Ta=25°C VGS= --4V<br>7<br>25 5<br>3<br>20 2<br>Ta=75°C 25°C<br>15 10<br>--50mA<br>7<br>10 ID= --30mA 5 --25 ° C<br>3<br>5 2<br>0 1.0<br>0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --0.01 2 3 5 7 --0.1 2 3<br>Gate-to-Source Voltage, VGS  --  V IT00079 Drain Current, ID  --  A IT00080<br>RDS(on)  --  ID RDS(on)  --  ID<br>100 1000<br>7 VGS= --2.5V 7 VGS= --1.5V<br>5 5<br>3 3<br>2 Ta=75°C 25°C 2<br>10 100<br>7 --25°C 7<br>5 5 25°C<br>Ta=75°C<br>3 3<br>2 2 --25°C<br>1.0 10<br>--0.01 2 3 5 7 --0.1 2 3 --0.1 2 3 5 7 --1.0 2 3<br>Drain Current, ID  --  A IT00081 Drain Current, ID  --  mA IT00082<br>18 RDS(on)  --  Ta 1.0 |  yfs  |   --  ID<br>7 VDS= --10V<br>16 5<br>14 3<br>25°C<br>2<br>12<br>10 0.1<br>7<br>8 5<br>6 3<br>2<br>4<br>2 0.01<br>--60 --40 --20 0 20 40 60 80 100 120 140 160 --0.01 2 3 5 7 --0.1 2 3<br>Ambient Temperature, Ta  --  °C IT00083 Drain Current, ID  --  A IT00084<br>75°C<br>Ta= --25°C<br>ID= --50mA, VGS= --4.0V<br>ID= --30mA, VGS= --2.5V<br>--4.0V --3.0V --2.5V<br>75°C<br>°C<br>Ta= --25<br>Drain Current, ID  --  A --6.0V Drain Current, ID  --  A<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --   Static Drain-to-Source On-State Resistance, RDS(on)  --<br>Ω Ω<br>Static Drain-to-Source On-State Resistance, RDS(on)  --   Static Drain-to-Source On-State Resistance, RDS(on)  --<br>Ω |yfs  --  S<br>|<br>Static Drain-to-Source On-State Resistance, RDS(on)  --<br>Forward Transfer Admittance,<br>**----- End of picture text -----**<br>


No.6648-3/7 

**3LP01SS** 

**==> picture [473 x 552] intentionally omitted <==**

**----- Start of picture text -----**<br>
IS  --  VSD SW Time  --  ID<br>3 1000<br>VGS=0V VDD= --15V<br>2 7 VGS= --4V<br>5<br>3<br>--0.1 2 tf<br>7<br>td(off)<br>100<br>5<br>7<br>5<br>3 tr<br>3<br>2<br>2 td(on)<br>--0.01 10<br>--0.5 --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --0.01 2 3 5 7 --0.1<br>Diode Forward Voltage, VSD  --  V IT00085 Drain Current, ID  --  A IT00086<br>Ciss,  Coss,  Crss  --  VDS VGS  --  Qg<br>100 --10<br>f=1MHz VDS= --10V<br>7 --9 ID= --0.1A<br>5<br>--8<br>3<br>--7<br>2<br>--6<br>10 --5<br>Ciss<br>7<br>--4<br>5 Coss<br>--3<br>3<br>--2<br>2 Crss<br>--1<br>1.0 0<br>0 --5 --10 --15 --20 --25 --30 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6<br>Drain-to-Source Voltage, VDS  --  V IT00087 Total Gate Charge,  Qg  --  nC IT00088<br>PD  --  Ta<br>0.20<br>0.15<br>0.10<br>0.05<br>0<br>0 20 40 60 80 100 120 140 160<br>Ambient Temperature, Ta  --  °C IT02381<br>°C<br>Ta=75 °C<br>25<br>°C<br>--25<br>Source Current, IS  --  A<br>Switching Time, SW Time  --  ns<br>Ciss,  Coss,  Crss  --  pF<br>Gate-to-Sourse Voltage, VGS  --  V<br>Allowable Power Dissipation, PD  --  W<br>**----- End of picture text -----**<br>


No.6648-4/7 

**3LP01SS** 

## **Embossed Taping Specifi cation** 

3LP01SS-TL-E, 3LP01SS-TL-H 

No.6648-5/7 

**3LP01SS** 

**Outline Drawing** 3LP01SS-TL-E, 3LP01SS-TL-H 

**==> picture [254 x 370] intentionally omitted <==**

**----- Start of picture text -----**<br>
Mass (g) Unit<br>0.0018<br>* For reference [mm]<br>**----- End of picture text -----**<br>


## **Land Pattern Example** 

**==> picture [215 x 214] intentionally omitted <==**

**----- Start of picture text -----**<br>
Unit: mm<br>0.5<br>0.45 0.45<br>0.45 0.45<br>0.5<br>1.2<br>**----- End of picture text -----**<br>


No.6648-6/7 

**3LP01SS** 

Note on usage : Since the 3LP01SS is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 

ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals”  must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 

PS No.6648-7/7